CN109564852A - 导电材料的压印平版印刷方法、用于压印平版印刷的印模及用于压印平版印刷的设备 - Google Patents
导电材料的压印平版印刷方法、用于压印平版印刷的印模及用于压印平版印刷的设备 Download PDFInfo
- Publication number
- CN109564852A CN109564852A CN201680088160.3A CN201680088160A CN109564852A CN 109564852 A CN109564852 A CN 109564852A CN 201680088160 A CN201680088160 A CN 201680088160A CN 109564852 A CN109564852 A CN 109564852A
- Authority
- CN
- China
- Prior art keywords
- stamp
- layer
- electrocondution slurry
- imprint lithography
- feature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001459 lithography Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004020 conductor Substances 0.000 title description 11
- 239000002002 slurry Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000012545 processing Methods 0.000 claims abstract description 28
- 239000011796 hollow space material Substances 0.000 claims description 43
- 239000011159 matrix material Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000004020 luminiscence type Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 78
- 239000000463 material Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000007711 solidification Methods 0.000 description 7
- 230000008023 solidification Effects 0.000 description 7
- 238000009835 boiling Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2016/045769 WO2018026378A1 (en) | 2016-08-05 | 2016-08-05 | Method of imprint lithography of conductive materials; stamp for imprint lithography, and apparatus for imprint lithograph |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109564852A true CN109564852A (zh) | 2019-04-02 |
Family
ID=61073033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680088160.3A Pending CN109564852A (zh) | 2016-08-05 | 2016-08-05 | 导电材料的压印平版印刷方法、用于压印平版印刷的印模及用于压印平版印刷的设备 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2019527938A (ko) |
KR (1) | KR20190027389A (ko) |
CN (1) | CN109564852A (ko) |
TW (1) | TWI663038B (ko) |
WO (1) | WO2018026378A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112689797A (zh) * | 2018-09-12 | 2021-04-20 | 应用材料公司 | 用于制造压印光刻的印模的方法、用于压印光刻的印模、压印辊子、和卷对卷基板处理设备 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10948818B2 (en) * | 2018-03-19 | 2021-03-16 | Applied Materials, Inc. | Methods and apparatus for creating a large area imprint without a seam |
CN112219164A (zh) * | 2018-03-26 | 2021-01-12 | 应用材料公司 | 用于生产多层压印母版的方法、多层压印母版及多层压印母版的用途 |
US10705268B2 (en) * | 2018-06-29 | 2020-07-07 | Applied Materials, Inc. | Gap fill of imprinted structure with spin coated high refractive index material for optical components |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296043A (en) * | 1990-02-16 | 1994-03-22 | Canon Kabushiki Kaisha | Multi-cells integrated solar cell module and process for producing the same |
US20070298176A1 (en) * | 2006-06-26 | 2007-12-27 | Dipietro Richard Anthony | Aromatic vinyl ether based reverse-tone step and flash imprint lithography |
US20080152835A1 (en) * | 2006-12-05 | 2008-06-26 | Nano Terra Inc. | Method for Patterning a Surface |
TW200846278A (en) * | 2007-05-24 | 2008-12-01 | Contrel Technology Co Ltd | Method for producing viscous micro-structure |
US20090046362A1 (en) * | 2007-04-10 | 2009-02-19 | Lingjie Jay Guo | Roll to roll nanoimprint lithography |
KR20090061771A (ko) * | 2007-12-12 | 2009-06-17 | 인하대학교 산학협력단 | 마이크로 구조물 제작을 나노 임프린트 리소그래피 공정기법의 몰드 구조 형성 방법 |
US20100098967A1 (en) * | 2007-02-13 | 2010-04-22 | Jan Schroers | Method for Imprinting and Erasing Amorphous Metal Alloys |
KR20100133136A (ko) * | 2009-06-11 | 2010-12-21 | 고려대학교 산학협력단 | 나노 임프린트 리소그래피 공정을 이용한 광전자 소자 제조 방법 |
US20120009799A1 (en) * | 2010-07-07 | 2012-01-12 | Tsukasa Azuma | Template manufacturing method, semiconductor device manufacturing method and template |
WO2012167076A2 (en) * | 2011-06-01 | 2012-12-06 | The Regents Of The University Of Michigan | Nanochannel-guided patterning for polymeric substrates |
US20150037922A1 (en) * | 2011-09-23 | 2015-02-05 | 1366 Technologies, Inc. | Techniques for improved imprinting of soft material on substrate using stamp including underfilling to leave a gap and pulsing stamp |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08118467A (ja) * | 1994-10-21 | 1996-05-14 | Matsushita Electric Ind Co Ltd | スクリーン印刷用グリーンシート |
US7857611B2 (en) * | 2006-02-14 | 2010-12-28 | Pioneer Corporation | Imprinting device and imprinting method |
JP5388539B2 (ja) * | 2008-10-28 | 2014-01-15 | 旭化成イーマテリアルズ株式会社 | パターン形成方法 |
JP5518538B2 (ja) * | 2009-03-26 | 2014-06-11 | 富士フイルム株式会社 | レジスト組成物、レジスト層、インプリント方法、パターン形成体、磁気記録媒体の製造方法、及び磁気記録媒体 |
JP2010262959A (ja) * | 2009-04-30 | 2010-11-18 | Murata Mfg Co Ltd | 配線パターンの形成方法 |
JP2010263000A (ja) * | 2009-04-30 | 2010-11-18 | Murata Mfg Co Ltd | 電子部品製造方法 |
JP2010287765A (ja) * | 2009-06-12 | 2010-12-24 | Murata Mfg Co Ltd | インプリント方法、配線パターンの形成方法、および積層電子部品 |
JP5540628B2 (ja) * | 2009-09-28 | 2014-07-02 | 大日本印刷株式会社 | ナノインプリントパターン形成方法 |
JP5599355B2 (ja) * | 2011-03-31 | 2014-10-01 | 富士フイルム株式会社 | モールドの製造方法 |
JP5824399B2 (ja) * | 2012-03-30 | 2015-11-25 | 富士フイルム株式会社 | ナノインプリント用樹脂モールドおよびその製造方法 |
JP6307269B2 (ja) * | 2013-04-09 | 2018-04-04 | 旭化成株式会社 | 微細パターン形成用積層体、モールドの製造方法 |
-
2016
- 2016-08-05 JP JP2019506171A patent/JP2019527938A/ja active Pending
- 2016-08-05 KR KR1020197006249A patent/KR20190027389A/ko not_active Application Discontinuation
- 2016-08-05 WO PCT/US2016/045769 patent/WO2018026378A1/en active Application Filing
- 2016-08-05 CN CN201680088160.3A patent/CN109564852A/zh active Pending
-
2017
- 2017-08-02 TW TW106126054A patent/TWI663038B/zh not_active IP Right Cessation
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296043A (en) * | 1990-02-16 | 1994-03-22 | Canon Kabushiki Kaisha | Multi-cells integrated solar cell module and process for producing the same |
US20070298176A1 (en) * | 2006-06-26 | 2007-12-27 | Dipietro Richard Anthony | Aromatic vinyl ether based reverse-tone step and flash imprint lithography |
US20080152835A1 (en) * | 2006-12-05 | 2008-06-26 | Nano Terra Inc. | Method for Patterning a Surface |
US20100098967A1 (en) * | 2007-02-13 | 2010-04-22 | Jan Schroers | Method for Imprinting and Erasing Amorphous Metal Alloys |
US20090046362A1 (en) * | 2007-04-10 | 2009-02-19 | Lingjie Jay Guo | Roll to roll nanoimprint lithography |
TW200846278A (en) * | 2007-05-24 | 2008-12-01 | Contrel Technology Co Ltd | Method for producing viscous micro-structure |
KR20090061771A (ko) * | 2007-12-12 | 2009-06-17 | 인하대학교 산학협력단 | 마이크로 구조물 제작을 나노 임프린트 리소그래피 공정기법의 몰드 구조 형성 방법 |
KR20100133136A (ko) * | 2009-06-11 | 2010-12-21 | 고려대학교 산학협력단 | 나노 임프린트 리소그래피 공정을 이용한 광전자 소자 제조 방법 |
US20120009799A1 (en) * | 2010-07-07 | 2012-01-12 | Tsukasa Azuma | Template manufacturing method, semiconductor device manufacturing method and template |
WO2012167076A2 (en) * | 2011-06-01 | 2012-12-06 | The Regents Of The University Of Michigan | Nanochannel-guided patterning for polymeric substrates |
US20150037922A1 (en) * | 2011-09-23 | 2015-02-05 | 1366 Technologies, Inc. | Techniques for improved imprinting of soft material on substrate using stamp including underfilling to leave a gap and pulsing stamp |
Non-Patent Citations (1)
Title |
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KANG, MG 等: "Organic Solar Cells Using Nanoimprinted Transparent Metal Electrodes", 《ADVANCED MATERIALS》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112689797A (zh) * | 2018-09-12 | 2021-04-20 | 应用材料公司 | 用于制造压印光刻的印模的方法、用于压印光刻的印模、压印辊子、和卷对卷基板处理设备 |
Also Published As
Publication number | Publication date |
---|---|
TW201815545A (zh) | 2018-05-01 |
WO2018026378A1 (en) | 2018-02-08 |
JP2019527938A (ja) | 2019-10-03 |
TWI663038B (zh) | 2019-06-21 |
KR20190027389A (ko) | 2019-03-14 |
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Application publication date: 20190402 |