CN109564852A - Imprint lithography method, the stamp for imprint lithography and the equipment for imprint lithography of conductive material - Google Patents
Imprint lithography method, the stamp for imprint lithography and the equipment for imprint lithography of conductive material Download PDFInfo
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- CN109564852A CN109564852A CN201680088160.3A CN201680088160A CN109564852A CN 109564852 A CN109564852 A CN 109564852A CN 201680088160 A CN201680088160 A CN 201680088160A CN 109564852 A CN109564852 A CN 109564852A
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- 238000000034 method Methods 0.000 title claims abstract description 37
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- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000012545 processing Methods 0.000 claims abstract description 28
- 239000011796 hollow space material Substances 0.000 claims description 43
- 239000011159 matrix material Substances 0.000 claims description 18
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- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 78
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- 238000004519 manufacturing process Methods 0.000 description 18
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- 238000005516 engineering process Methods 0.000 description 6
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- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description carries out patterned method using imprint lithography, for the stamp of imprint lithography, the roller platen and substrate processing apparatus of roll-to-roll substrate processing apparatus.The described method includes: providing the layer of electrocondution slurry on substrate, wherein the viscosity of electrocondution slurry is 0.3Pa.s or higher, in particular 1.5pa.s or higher；Stamp is stamped in the layer of electrocondution slurry, to generate the patterned layer of electrocondution slurry；Completely or partially cured pattern layer；And stamp is discharged from patterned layer.
Description
Technical field
The embodiment of present disclosure is related to imprint lithography (imprint lithography), in particular to leads
The imprint lithography of electric material.The coining lithographic plate of the embodiment of present disclosure particularly electrocondution slurry (paste)
Printing, the stamp for imprint lithography and the equipment using the method and the equipment for using the stamp.
Background technique
The patterning of film is desired to a variety of applications, such as the manufacture of microelectronic device, the manufacture of photoelectron device
Or the manufacture of Optical devices.Optical lithography technology can be used for patterning the film in device.However, optics lithographic plate
Printing technology may be the limit that is expensive and/or being likely to be breached them, especially for the substrate of larger size.
For roll-to-roll (roll-to-roll) processing, using traditional technology without the use of expensive photoetching
It is conditional to manufacture small characteristic size.Such as silk-screen printing (screen print), intaglio plate (gravure), soft version
(flexographic), the printing technology of ink-jet etc. is for example limited to characteristic size, such as > 10 μm, and the size may be not enough
It is small.
In addition, piece can benefit from imprint lithography processing to piece (sheet-to-sheet) processing.Imprint lithographic plate print
Brush can provide the relatively inexpensive processing for patterned film, to provide pattern structure in a device.
Conductive features, i.e., the feature manufactured by conductive material can be used for electronic device, microelectronic device, photoelectron dress
It sets and Optical devices.
It can be beneficial for improveing the manufacture of conductive features.
Summary of the invention
In view of the above, provides and carry out patterned method, for imprint lithography using imprint lithography
The roller platen and substrate processing apparatus of stamp, roll-to-roll substrate processing apparatus.Another aspect, advantage and the spy of present disclosure
It levies apparent by dependent claims, specification and attached drawing.
According to one embodiment, it provides and a kind of carries out patterned method using imprint lithography.The method packet
It includes: the layer of electrocondution slurry is provided on substrate, wherein the viscosity of electrocondution slurry is 0.3Pas or higher, in particular
1.5pas or higher；Stamp (stamp) is stamped in the layer of the electrocondution slurry, to generate the pattern of electrocondution slurry
Change layer；Completely or partially solidify the patterned layer；And (release) described stamp is discharged from the patterned layer.
According to another embodiment, a kind of stamp for imprint lithography is provided.The stamp includes: matrix；And
Multiple features, for generating pattern when by the stamp imprinted in layer, wherein the multiple feature is supported by described matrix,
Wherein at least 10% in the multiple feature has the feature for the D/W ratio for providing 1.5 or bigger, particularly 5 or bigger wide
W and depths of features D is spent, to generate hollow space during imprint lithography.
According to another embodiment, a kind of roller platen of roll-to-roll substrate processing apparatus is provided.The roller platen includes print
Mould.The stamp includes: matrix；And multiple features, for generating pattern when by the stamp imprinted in layer, wherein described
Multiple features are supported by described matrix, wherein at least 10% in the multiple feature, which has, provides 1.5 or bigger, particularly 5
Or the characteristic width W and depths of features D of bigger D/W ratio, to generate hollow space, and its during imprint lithography
Described in multiple features provide on the surface of the roller.
According to another embodiment, a kind of substrate processing apparatus is provided.The equipment includes stamp.The stamp includes:
Matrix；And multiple features, for generating pattern when by the stamp imprinted in layer, wherein the multiple feature is by matrix branch
Support, wherein at least 10% feature with the D/W ratio for providing 1.5 or bigger, particularly 5 or bigger in the multiple feature
Width W and depths of features D, to generate hollow space during imprint lithography.
Detailed description of the invention
Can be understood by reference to the illustrative embodiments of the present disclosure described in attached drawing brief overview in it is upper simultaneously
The embodiment of the present disclosure under is described in further detail.However, attached drawing is only painted the exemplary embodiment of present disclosure,
Therefore it should not serve to the limitation to range, because present disclosure allows other equally effective embodiment.
Figure 1A and 1B is painted the imprint lithography carried out according to the embodiment of present disclosure to the film on substrate
Technique and the technique for using the stamp for imprint lithography according to present disclosure；
Fig. 2 is painted the stamp for imprint lithography according to present disclosure；
Fig. 3 is painted another stamp for imprint lithography according to present disclosure；
Fig. 4 A and 4B are painted the imprint lithography carried out according to the embodiment of present disclosure to the film on substrate
Technique；
Fig. 5 is for providing showing for the equipment of pattern in the metal pulp bed of material used in embodiments described herein
It is intended to；And
Fig. 6 is painted the flow chart for showing imprint lithography method.
In order to help to understand, the similar elements shared in the various figures are indicated using identical label as far as possible.Consider
Element and feature to an embodiment can be beneficially incorporated in other embodiment, without being described in further detail.
Specific embodiment
The embodiment of present disclosure, which provides, a kind of carries out patterned method using imprint lithography.The method
It include: that the layer of electrocondution slurry is provided on substrate, wherein the viscosity of electrocondution slurry is 1.5pas or higher；Stamp is stamped in
In the layer of the electrocondution slurry, to generate the patterned layer of electrocondution slurry；Completely or partially cured pattern layer；And from
Patterned layer discharges stamp.The embodiment of present disclosure further provides for and/or using the print for imprint lithography
Mould.The stamp includes matrix；And multiple features, the multiple feature are used to generate figure when by the stamp imprinted in layer
Case, wherein the multiple feature is by substrate support, wherein at least 10% in the multiple feature have provide 1.5 or bigger,
The characteristic width W and depths of features D of especially 5 or bigger D/W ratio, with during imprint lithography generate in it is absolutely empty
Between.
The resolution ratio of the accessible characteristic size of roll-to-roll (R2R) imprint lithography is about 1 μm or smaller, such as even
Reach sub-micro (sub-micro) resolution ratio.Therefore, using imprint lithography can according to the embodiment of present disclosure
Allow to manufacture compact features on flexible substrates.
Using landform (geography) coining, there are two types of modes.Film can be deposited and imprint.The material of coining can be used as
Etching mask is used for subsequent etching.Alternatively, film can be deposited and imprint.The material of coining, such as resist (resist) material
Material, can be the permanent sections of product, and form the film of deposition.By using stamp imprintable material, can be used in the disclosure
Film figure is turned to desired or scheduled shape by the imprint lithography of the embodiment of appearance.
The embodiment according to described in present disclosure, imprint lithography can be particularly useful for R2R technique.It is depositing
When film and manufacture patterned film, R2R technique allows high production rate.For example, film can be deposited and patterned in R2R technique, such as
Film, i.e., with a thickness of several nanometers to some tens of pm of material layer.Film may be provided on plastic base, for example, PET, PEN, COP,
PI, TAC (triacetyl cellulose (Triacetyl cellulose)) and other similar substrate.
According to the further embodiments of present disclosure, the deposition and patterning of film also can be applied to metal or thin glass
Glass substrate, such as the Willow Glass of healthy and free from worry (Corning).For example, piece can be used to piece processing manufacture film.This can be applied
In glass substrate or the plastic base being attached on glass carrier.Other embodiment can be related to metal substrate, organic group
Plate, glass composite substrate (such as being manufactured for printed circuit board (printed circuit board, PCB)), ABF
(Ajinomoto build-up film；Ajinomoto combined films) (such as integrated circuit (IC) encapsulate) and other just
Property substrate.
Figure 1A and 1B, which is painted, carries out patterned method using imprint lithography and for the stamp of imprint lithography
110.The layer 102 of electrocondution slurry provides on the substrate 100.According to the embodiment of present disclosure, electrocondution slurry has
1.5pas or higher viscosity.Foundation can be with some implementations of the present disclosure in conjunction with other embodiments described herein
Mode, electrocondution slurry can be even slurry or silver paste.
Stamp 110 is stamped in the layer 102 of electrocondution slurry, to generate pattern in patterned layer 104, as shown in Figure 1B.
Stamp 110 includes matrix 112 and multiple features 114.The feature of stamp can be formed for example by the recess portion in stamp 110, wherein
Recess portion in stamp leads to the protrusion in patterned layer 104.It can claim corresponding to the protrusion in the patterned layer of the feature of stamp
For patterned features.
Each feature 114 of stamp 110 has characteristic width W and depths of features D.The feature of stamp is by bottom surface 121, side
Surface 123 and one or more formation of adjacent top surface 122.Illustratively, Figure 1A is painted the section of stamp 110, wherein feature
Width W is plotted.According to the embodiment of present disclosure, on the direction for the paper plane for being not parallel to Figure 1A, such as hanging down
Directly on the direction of characteristic width W shown in figure 1A, feature further includes having the second feature of W'.
Embodiment according to present disclosure, it is possible to provide multiple features, plurality of feature include: side surface, bottom table
Face and top surface.For example, each feature may include one or more side surfaces, a bottom surface, and can be surrounded by top surface.It is more
Grade (multi-level) stamp can further comprise more than one bottom surface.Foundation can be with other embodiments described herein
In conjunction with some embodiments, at least one of side surface, bottom surface and top surface are coated with coating.
According to some embodiments, multiple features 114 of stamp 110 can have identical characteristic width and identical spy
Levy depth.Additionally or alternatively, the different characteristic of stamp can have different feature geometries, i.e., different features is wide
Degree and different depths of features.Furthermore it is possible to which duplicate mode is by two or more with various sizes of feature phase each other
Neighbour places to form duplicate pattern.
According to some embodiments of present disclosure, pattern characteristics be can be selected from by following composed group: line
(line), column (pole), groove (trench), hole (hole), circle, square, rectangle, triangle, other polygons, pyramid
Shape, flat-top (plateaus) and their combination or array.In general, pattern characteristics may include used in circuit manufacture
Shape.The feature of stamp can have corresponding geometry, and wherein protrusion corresponds to recess portion, and vice versa.Pattern characteristics can
To include the mask for manufacturing the conducting wire in circuit.
According to some embodiments of present disclosure, carrying out patterned method using imprint lithography can be used for making
Wire grid polarizer (wire grid polarizer) is made, wherein for example line is provided as pattern characteristics.For example, line can have
100nm or lower page half (half page), such as page half of 50nm to 100nm.
As shown in Figure 1B, stamp 110 and substrate 100 are moved relative to each other so that the layer 102 of electrocondution slurry is stamped
To form patterned layer 104.For example, stamp 110 can be reduced on substrate, that is, mobile relative to substrate.Alternatively, substrate
100 can be mobile relative to stamp 110.According to other alternative, substrate 100 and stamp 110 can be moved to stamp 110
It is stamped in the layer 102 of conductive material.
According to some embodiments of present disclosure, as about Fig. 5 exemplary description, stamp 110 can be coining
A part of roller, or stamp can be attached on roller, wherein can be imprinted in R2R processing.For in R2R processing
Imprint lithography, roller can rotate around the axis of rotation, and substrate moves through the surface of roller, such as cylindrical surface.
For example, substrate conveying speed v can correspond to the angular speed w of roller according to formula v=rw, wherein R is the radius of roller.Namely
It says, substrate conveying speed is similar to crosscutting radial direction (cross-radial) speed of roller, i.e. tangential (tangential) speed of roller
Degree.
According to some embodiments of present disclosure, imprint lithography processing is also possible to autoregistration coining lithographic plate print
Brush (self-aligned imprint lithography, SAIL) processing.For SAIL processing, i.e., multistage imprint lithography
It handles, the recess portion in stamp can have two or more depths of features of the different piece of feature.This can be effectively
Pattern is generated in the film.Therefore, SAIL processing includes multistage stamp.(such as SAIL processing) system is handled with imprint lithography
Make route (such as connecting line) allow route have narrow width and the distance between route it is short.
Exemplary shown about Figure 1A and 1B according to the embodiment of present disclosure, and such as, electrocondution slurry is provided
On the substrate 100 with forming layer 102.Electrocondution slurry is imprinted with stamp 110 and forms required structure.Conductive material is cured, example
Such as pass through light (such as UV light), heat.Before imprint master is separated or discharged from substrate, can completely or partially it provide solid
Change.For example, solidification can be to be incomplete, but provide enough structural stabilities, enable imprint master discharge slurry without
Damage the structure of coining.
Conductive material is subjected to subsequent solidification and conductive material is fully cured.In one corresponding to stamp on substrate
Or in the case where a part of place of the stamp 110 of multiple top surfaces 122 can leave retained material, it is possible to provide etching process is to remove
Retained material.Such as, it is possible to provide photoetch, to remove the procedural electrocondution slurry material between patterning.This etching can be with
It is wet etching or dry ecthing.
Implementations described herein is referring to the patterned layer on the substrate directly imprinted by stamp.That is, pattern
Change layer and form the permanent sections of product and simultaneously form deposition film, by be manufacture device the folded a part of layer heap.According to this public affairs
The embodiment of content is opened, patterned layer 104 forms the functional layer in device.Electrocondution slurry is cured to form the conduction of device
Structure will not be for example removed after the etch process.
According to the another aspect of present disclosure, hollow space 214 allow thinning stay in corresponding to one of stamp or
The residual layer of photoresist or electrocondution slurry material at the stamp part of multiple top surfaces 122.In comparison, without for mentioning
Air (air can be shifted when stamp imprints electrocondution slurry) is accommodated for hollow space and, for example, may be discharged
The stamp of the sufficiently large depths of features of gas will lead to the residual of surplus in the case where the layer 102 of electrocondution slurry may thicken
Stay material.Stamp according to present disclosure causes to reduce or even avoids receiving material on substrate.
Fig. 2 is painted another embodiment of the stamp 110 of the embodiment according to present disclosure.Stamp 110 includes base
Body 112 and feature 114.The feature has width W (and another width W', is not illustrated in a section, i.e. in Fig. 2) and depth
D.As shown in Fig. 2, stamp 110 may include the feature with depth D, depth D is sufficiently large at the bottom of the feature 114 of stamp 110
Hollow space 214 is provided between surface 121 and the surface of patterned layer 104 221.
Using electrocondution slurry imprint lithography handle be electrocondution slurry (part during curing process on one side
Or be fully cured) by discharge gas.Caused to imprint lithographic plate print by the hollow space 214 that the depth of the feature 114 of stamp 110 provides
Brush, wherein material is not filled up completely the feature in stamp.Therefore, gas, which has, is thrown into volume therein.
Following at least one amount to adjust the gas that can be discharged from electrocondution slurry can be passed through: the viscosity of electrocondution slurry is led
The boiling temperature of material in plasma-based material, the volume of hollow space, cured degree, the supernumerary structure feature of stamp are (referring to example
Such as Fig. 3) and their combination.
For example, material can be added to electrocondution slurry, this can increase or decrease viscosity.This can cause to discharge in stamp
It is capable of providing before or by the adjustment of the curing time provided.Low boiling temperature solvent can be added to resist, such as can
Low boiling point solvent to be titrated to (titrate) to resist, to increase the gas flow discharged in solidification process.Hollow space 214
Volume increase can be increased up hollow space product pressurized energy time, hollow space product pressurized energy can be to gas
Opposite effect (counter-act) is discharged.In addition, as shown in figure 3, feature 114 can have 314 perforation of opening to allow
(escape) is discharged from stamp in gas.As another example, solidification can carry out under vacuum conditions, such as technology vacuum,
This can further influence the gas pressure in hollow space, especially in the case where there is opening or perforation.
According to the embodiment of present disclosure, the gas being discharged is used as a kind of mode for helping to discharge stamp.Example
Such as, the time of release is promoted to have some phase interactions between the curing degree when release with (2) in the gas of (1) discharge
With.Other aspects for helping stamp to discharge with influence that can interact are as described above, and be to be selected to be made of following element
Group at least one element: boiling temperature, the appearance of hollow space of the viscosity of electrocondution slurry, material in electrocondution slurry
Product, curing degree, the supernumerary structure feature (see, for example, Fig. 3) of stamp and their combination.
Fig. 2 is illustratively painted the embodiment of the stamp 110 with feature 114, and wherein the depth of feature is provided as
When by layer 102 of the stamp imprinted on electrocondution slurry, there is hollow space 214.Therefore it provides a kind of stamp.The stamp
Including matrix and multiple features, the multiple feature when by stamp imprinted in layer for generating pattern, plurality of feature
By substrate support, at least 10% in plurality of feature has the characteristic width W and feature of the D/W ratio for providing 5 or bigger
Depth D, to generate hollow space during imprint lithography.According to can be with the sheet in conjunction with other embodiments described herein
The pattern of the further embodiments of disclosure, the conductive material provided using imprint lithography described herein can be subjected to
Further plating manufacture processing.Plating will grow in the feature of pattern or deposit other conductive material.Therefore, pressure is utilized
The patterned layer of print lithographic printing manufacture can be seed layer, to handle for further manufacture.
As described herein, the characteristic width on a direction is the full-size that this side up.Similarly, depths of features
It is the depth capacity of feature.For multistage stamp designs, a feature can be in the same direction and two or more depths
There are two or more width on degree.For example, the width of cylindrical character will usually diameter, and the depth of cylindrical character
By the height of usually individual cylinders.As another example, for rectangular characteristic, width and height usually can be by right
The size for the cuboid answered provides.
Fig. 3 is painted another example of the stamp 110 of the embodiment according to present disclosure.Fig. 3 has been shown in stamp 110
It is embossed in electrocondution slurry after substrate 100 on patterned layer 104.The depth of feature in stamp 110 it is sufficiently large with
There is hollow space 214 between the surface of patterned layer 104 and the bottom surface of feature.According to can with it is described herein other
The some embodiments for the present disclosure that embodiment combines, hollow space 214 can pass through opening 314 and another region
It is in fluid communication.For example, opening 314 can be perforation, especially in the matrix of stamp 110.Implementation according to present disclosure
Mode, opening, such as multiple openings in matrix, are configured such that air-flow can flow out or flow into hollow space.
Opening 314 or perforation allow to release the gas discharged from electrocondution slurry when solidifying.According to some embodiments,
Opening 314 can extend through the matrix of stamp 110.Therefore, opening can be in the area outside hollow space 214 and stamp 110
Fluid communication is provided between domain.For example, the region outside stamp can have for the patterning carried out under technology vacuum
10mbar or lower or 1mbar or lower pressure.
According to some embodiments, the size of opening 314 (or perforation) can be in the range of 50 μm to 500 μm.Foundation
Other embodiment, two or more openings 314 that corresponding with feature hollow space 214 is in fluid communication it is openable and
The volume for the hollow space 214 that shared channel or shared other hollow space, especially volume are characterized is led to outside
The other hollow space of at least 100 times (or even 10000 times).
As described above, there are many selections to influence during imprint lithography processing, in the solidification of embossed layer or pre- solid
The discharge of the gas from electrocondution slurry occurred during change.These selections can be combined with other selections to allow to adjust and lead
The degasification (outgas) of plasma-based material, to provide required patterned layer, such as about character shape, material composition or the like.
In addition, as shown in Fig. 4 A and 4B, these selections can be combined additionally or alternatively, to allow to facilitate to discharge from substrate
Stamp.
Fig. 4 A is painted the stamp 110 with matrix 112.Stamp 110 is partly stamped in the layer of electrocondution slurry to generate
Patterned layer 104.For example, patterned layer 104 can be provided on substrate.Foundation can be with other embodiments described herein
In conjunction with some embodiments, the layer or pattern layer of electrocondution slurry can be provided on substrate or provides on substrate.It is special
Not, the layer that the layer may be provided as directly contacting with substrate or one or more are other may be provided in substrate and conductive paste
Between the layer (patterned layer of generation device) of material.
As shown in Figure 4 A, hollow space 214 is provided on patterned layer 104.The recess portion of the feature of stamp is not filled out completely
Fill electrocondution slurry.Fig. 4 A, which is shown between the top surface of stamp and substrate, has the case where small space.Fig. 4 B is painted with matrix
112 stamp 110 is stamped in the situation in electrocondution slurry completely.The top surface of stamp and the structure or layer under electrocondution slurry
(such as substrate 100 shown in Fig. 4 B) contact.In addition, situation shown in Fig. 4 B has between electrocondution slurry and stamp 110
Hollow space 214.Hollow space 214 allows gas to be discharged into hollow space from electrocondution slurry.During the discharge of gas increases
Pressure in absolutely empty 214.For example, in the hollow space of at least 10% stamp feature, especially at least 50% print
In the hollow space of modular character, or even more particularly in the hollow space of at least 90% stamp feature, origin self-conductance plasma-based
Pressure caused by the discharge of the gas of material increases.Pressure in hollow space leads to power as illustrated with arrow 402, this power can be helped
It helps and discharges stamp 110 from substrate 100 or stamp 110 can be discharged from substrate 100.
According to the embodiment of present disclosure, by reducing the volume of hollow space, the viscosity for reducing electrocondution slurry, increasing
Add curing time, to electrocondution slurry be added low boiling temperature solvent, reduce perforation size (or perforation is not provided) or they
Close, can increase pressure and thus increasing action from substrate release stamp release direction on power.According to present disclosure
Embodiment by the volume for increasing hollow space, the viscosity for increasing electrocondution slurry, reduces curing time, reduction in conductive paste
The amount of low boiling temperature solvent in material, the size (or perforation is provided) or their combination for increasing perforation, can reduce pressure and
Thus reduce the power acted on from the release direction of substrate release stamp.In view of the above, the embodiment party of present disclosure
Formula allows to provide scheduled or desired release force to act on stamp, uses and improves imprint lithography processing.
The other details example for the imprint lithography processing (such as SAIL processing) that can additionally or alternatively provide
It is illustrated in Fig. 5 to property.According to can be imprinted flat with the implementations described herein in conjunction with other embodiments described herein
The method of version printing and stamp for imprint lithography may include in and/or for roll-to-roll process (R2R technique).Coining
Station may include roller 510, and roller 510 can be rotated around the axis 514 of roller 510.Fig. 5 is painted rotation by arrow 512.When roller 510 revolves
When turning, the pattern for being pasted to the stamp 110 of roller or a part as roller is stamped in the layer 102 of electrocondution slurry.
As shown in figure 5, roller 510 has the stamp 110 for being provided at a part on roller 510 or as roller.When substrate 100
When the mobile gap by between roller 510 and for example another roller 502, the pattern of stamp 110 be molded (emboss) layer 102 it
In.This generates patterned layer 104.Arrow 503 indicates another roller 502 around the rotation of the axis 504 of another roller 502.Arrow in Fig. 5
101 indicate that substrate 100 passes through the movement in the gap between roller 510 and roller 502.These rollers are rotated as shown in arrow 5012 and 503.
For example, some embodiments according to present disclosure, the crosscutting radial speed of roller is similar to along the substrate conveying speed of arrow 101
Degree, the i.e. tangential velocity of roller.
According to the embodiment of present disclosure, R2R equipment can be provided in imprint lithography, wherein electrocondution slurry
The progress of imprint lithography is participated in, particularly wherein electrocondution slurry is functional layer in device to be manufactured.By stamp or
Roller platen imprints or before being molded in the layer of electrocondution slurry, electrocondution slurry be provided on substrate or on.
Fig. 5 is painted the sedimentation unit 544 for being applied to electrocondution slurry on substrate 100 or on substrate 100.Application is led
The layer 102 of plasma-based material offer conductive material.For example, falcate (meniscus) can be used in one or more sedimentation units 544
Coating, channel mould coating (slot die coating), scraper (doctor blade) coating, intaglio plate coating, the coating of soft version, spraying
Carry out coating layer 102.After the layer 102 of electrocondution slurry has been deposited, stamp 110 is used to the mould pressed pattern in layer 102, with life
At patterned layer 104.
According to can with some embodiments of the present disclosure other embodiments of present disclosure ins conjunction with, using consolidate
Change unit 532 and solidifies embossed electrocondution slurry.Solidified cell 532 can be selected from by following composed group: luminescence unit and
Heating unit, the luminescence unit and heating unit solidify the layer when being configured in stamp imprinted in layer,
Middle generation transmitting 533.For example, luminescence unit can emit UV light, especially in the wave-length coverage of 410nm to 190nm.It is another
In a example, transmitting unit can emit IR light, especially in 9-11 microns of (CO2Laser) wave-length coverage in.Another
In example, transmitting unit can emit the broad band light from IR to UV, have especially from 3 microns to the wavelength model of 250nm
Enclose interior transmitting.The a part of this transmitting of optical filter filtering only to select black matrix (blackbody) to emit can be used.
According to can with other embodiments described herein ining conjunction with and further embodiments selectively can be with
Optical measurement unit is provided, with the result for assessing processing substrate.
Fig. 5 shows solidified cell 532.Solidified cell 532 is configured as in the layer that stamp 110 is impressed into electrocondution slurry
When, partially or even wholly curing conductive slurry.According to the embodiment of present disclosure, the intensity of solidified cell can be passed through
(such as luminous intensity or thermal emission intensity) adjusts curing degree.Additionally or instead, curing degree can pass through 510 He of roller
The revolving speed of substrate 100 is adjusted.
In the case where partially cured by solidified cell 532, the second solidification can be provided in the downstream of solidified cell 532
Unit 534, wherein generating the second transmitting 535.Second solidified cell 534 can be completely solid by partially cured patterned layer 104
Change.
According to the embodiment of present disclosure, electrocondution slurry is imprinted using imprint lithography.The material being stamped, example
Such as anticorrosive additive material, it can be the permanent sections of product and form deposition film.Implementations described herein is referring to directly by printing
The patterned layer being molded on the substrate of print.That is, patterned layer forms the permanent sections of product and forms deposition film, it will
It is the folded a part of the layer heap of manufactured device.According to the embodiment of present disclosure, patterned layer 104 is formed in device
Functional layer.
Fig. 6 is painted the stream that patterned method is carried out using imprint lithography of the embodiment according to present disclosure
Cheng Tu.As shown at block 602, the layer of electrocondution slurry is provided.The viscosity of electrocondution slurry is 0.3Pas or higher.Electrocondution slurry quilt
It is configured to the functional layer to be formed in the device to manufacture by the method.As shown in block 604, the method includes by stamp
It imprints or is embossed in the layer of electrocondution slurry, to generate the patterned layer of electrocondution slurry.Box 606 be further painted fully or
Partly cured pattern layer.Foundation can be with some implementations of the present disclosure in conjunction with the other embodiments of present disclosure
Mode discharges stamp from patterned layer, wherein particularly, being emitted into during curing from electrocondution slurry absolutely empty in stamp feature
In the pressure of gas can respectively help to discharge stamp or can be from the patterning of substrate from the patterned layer of substrate
Layer release stamp.According to can with other embodiments described herein ining conjunction with and another embodiment, box 604 can be with
Including stamp is imprinted or is embossed in the layer of electrocondution slurry, partly curing conductive slurry and releases from the layer of electrocondution slurry
Put stamp.
The embodiment of present disclosure has the advantages that multiple, comprising: is carried out using imprint lithography to electrocondution slurry
Coining, to form the functional layer of such as device, wherein small characteristic size can be provided；Feature is provided and considering hollow space
Depth allows gas to discharge from electrocondution slurry during the solidification of patterned layer；Design hollow space and/or with hollow space stream
The opening of body connection is especially adjusted and/or is controlled to allow to increase or reduce the pressure for the gas being emitted into hollow space
Gas pressure in hollow space；The power that stamp release force is provided or stamp is helped to discharge due to the pressure in hollow space；
Reduce the retained material of patterned layer after solidifying；Make it possible to high-aspect ratio pattern conductive material；Make it possible in flexibility
Small feature is manufactured on substrate, especially has high production rate；And/or make it possible to manufacture autoregistration conductive layer.
Although foregoing teachings are directed to the embodiment of present disclosure, in the base region for not departing from present disclosure
In the case of, it can be designed other and further embodiments of present disclosure, scope of the present disclosure the rights by being appended to want
Book is asked to determine.
Claims (14)
1. a kind of carry out patterned method using imprint lithography, comprising:
The layer of electrocondution slurry is provided on substrate, wherein the viscosity of the electrocondution slurry is 1.5Pas or higher；
Stamp is stamped in the layer of the electrocondution slurry, to generate the patterned layer of the electrocondution slurry；
Completely or partially solidify the patterned layer；And
The stamp is discharged from the patterned layer.
2. the method as described in claim 1, wherein the viscosity of the electrocondution slurry is 100Pas or higher.
3. the method as described in any one of claims 1 to 2, wherein the stamp has multiple features for generating figure
Case, and wherein at least 10% in the feature has the depths of features of the thickness of the layer greater than the electrocondution slurry.
4. method as claimed in claim 3, wherein the depths of features provides between the electrocondution slurry and the stamp
Hollow space.
5. the method as described in any one of claim 3 to 4, wherein at least 10% in the feature respectively has opening, institute
Opening is stated to be configurable for reducing the gas pressure of the gas generated and completely or partially solidifying the patterned layer
Power.
6. method as claimed in claim 4, wherein being provided arranged to for reducing the gas pressure in the hollow space
Opening.
7. being helped wherein the gas pressure generates from the patterned layer such as method described in any one of claims 1 to 6
Discharge the power of the stamp.
8. a kind of stamp for imprint lithography, comprising:
Matrix；And
Multiple features, for generating pattern when by the stamp imprinted in layer, wherein the multiple feature is by described matrix
Support, wherein at least 10% spy with the D/W ratio for providing 1.5 or bigger, particularly 5 or bigger in the multiple feature
Width W and depths of features D is levied, for generating hollow space during imprint lithography.
9. stamp as claimed in claim 8, further comprises:
Multiple openings in described matrix are configured as allowing gas to enough outflows or flow into the hollow space.
10. the stamp as described in any one of claim 8 to 9, wherein the multiple feature include: side surface, bottom surface and
Top surface, and wherein at least one of the side surface, the bottom surface and top surface are applied coating.
11. a kind of roller platen of roll-to-roll substrate processing apparatus, comprising:
Stamp as described in any one of claim 8 to 10, wherein the multiple feature is provided on the surface of the roller platen
On.
12. a kind of substrate processing apparatus, comprising:
Stamp as described in any one of claim 8 to 10.
13. substrate processing apparatus as claimed in claim 12, wherein stamp offer is being configurable for roll-to-roll place
On the surface of the roller of reason
14. substrate processing apparatus described in any one of claim 12 to 13, further comprises:
Solidified cell, is selected from the group as composed by luminescence unit and heating unit, and the solidified cell is configured in
Solidify the layer when by the stamp imprinted in layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2016/045769 WO2018026378A1 (en) | 2016-08-05 | 2016-08-05 | Method of imprint lithography of conductive materials; stamp for imprint lithography, and apparatus for imprint lithograph |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109564852A true CN109564852A (en) | 2019-04-02 |
Family
ID=61073033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680088160.3A Pending CN109564852A (en) | 2016-08-05 | 2016-08-05 | Imprint lithography method, the stamp for imprint lithography and the equipment for imprint lithography of conductive material |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2019527938A (en) |
| KR (1) | KR20190027389A (en) |
| CN (1) | CN109564852A (en) |
| TW (1) | TWI663038B (en) |
| WO (1) | WO2018026378A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112689797A (en) * | 2018-09-12 | 2021-04-20 | 应用材料公司 | Method for manufacturing a stamp for imprint lithography, imprint roller, and roll-to-roll substrate processing apparatus |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10948818B2 (en) * | 2018-03-19 | 2021-03-16 | Applied Materials, Inc. | Methods and apparatus for creating a large area imprint without a seam |
| CN112219164A (en) * | 2018-03-26 | 2021-01-12 | 应用材料公司 | Method for producing a multi-layer imprint master, multi-layer imprint master and use of a multi-layer imprint master |
| US10705268B2 (en) * | 2018-06-29 | 2020-07-07 | Applied Materials, Inc. | Gap fill of imprinted structure with spin coated high refractive index material for optical components |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201815545A (en) | 2018-05-01 |
| TWI663038B (en) | 2019-06-21 |
| JP2019527938A (en) | 2019-10-03 |
| KR20190027389A (en) | 2019-03-14 |
| WO2018026378A1 (en) | 2018-02-08 |
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