JP2006501659A5 - - Google Patents

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JP2006501659A5
JP2006501659A5 JP2004540528A JP2004540528A JP2006501659A5 JP 2006501659 A5 JP2006501659 A5 JP 2006501659A5 JP 2004540528 A JP2004540528 A JP 2004540528A JP 2004540528 A JP2004540528 A JP 2004540528A JP 2006501659 A5 JP2006501659 A5 JP 2006501659A5
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film
layer
layers
transfer
transferred
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Priority claimed from PCT/DE2003/003258 external-priority patent/WO2004032257A2/en
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機半導体技術を用いて作成される少なくとも1つのデバイスを有するフィルム(1,3,6,7,8,9)であって、前記デバイスが複数の層を含み、該複数の層が電気的機能層を含んでいるフィルム(1,3,6,7,8,9)において、
前記デバイスの1つまたはそれより多くの層に熱転写またはUV転写により空間構造が設けられており、前記機能層が前記空間構造の領域において部分的に完全に切除されていることを特徴とするフィルム(1,3,6,7,8,9)。
Organic a film (1,3,6,7,8,9) that has at least one device is created using a semiconductor technology, the device comprises a plurality of layers, layers of said plurality of electrical In a film (1, 3, 6, 7, 8, 9) containing a functional layer,
One or more layers of the device are provided with a spatial structure by thermal transfer or UV transfer, and the functional layer is partly completely excised in the region of the spatial structure (1, 3, 6, 7, 8, 9).
前記フィルムが型押フィルムまたは積層フィルムであることを特徴とする請求項1に記載のフィルム(1,3,6,7,8,9)。   The film (1, 3, 6, 7, 8, 9) according to claim 1, wherein the film is an embossed film or a laminated film. 前記型押フィルムまたは積層フィルムが、キャリアフィルム(11,61,71,81)、有機半導体材料を含む少なくとも1つの層(16,67,76,88)、電気絶縁材料を含む少なくとも1つの層(15,65,75,87)及び、領域状にパターン形状に整形され、導電材料を含む、2つまたはそれより多くの層(14,17,19,64,66,74,77,86,89)を有することを特徴とする請求項2に記載のフィルム(1,3,6,7,8,9)。 The mold press film or laminated film, the carrier film (11,61,71,81), at least one layer comprising an organic semiconductor materials (16,67,76,88), at least one layer comprising an electrically insulating material (15, 65, 75, 87) and two or more layers (14, 17, 19, 64, 66, 74, 77, 86, which are shaped into a pattern in a region and contain a conductive material) 89. A film (1, 3, 6, 7, 8, 9) according to claim 2, characterized in that it has 89). 前記導電層(14,17,19,64,66,74,77,86,89)が有機導電材料を含むことを特徴とする請求項3に記載のフィルム(1,3,6,7,8,9)。 The film of claim 3 conductive layer (14,17,19,64,66,74,77,86,89) is characterized by comprising an organic conductive material (1, 3, 6, 7, 8, 9). 前記電気絶縁層(15,65,75,87)が有機絶縁材料を含むことを特徴とする請求項3または4に記載のフィルム(1,3,6,7,8,9)。 A film according to claim 3 or 4, wherein the electrically insulating layer (15,65,75,87) is characterized in that it comprises an organic insulating materials (1,3,6,7,8,9). 前記フィルムが、キャリアフィルム(11)と、該キャリアフィルム(11)に剥離可能に設けられた転移層部分(2)とを有する型押フィルムであることを特徴とする請求項2から5のいずれかに記載のフィルム(1,3,6,7,8,9)。6. The embossed film having a carrier film (11) and a transfer layer portion (2) detachably provided on the carrier film (11). The film according to (1,3,6,7,8,9). 前記型押フィルムが剥離層(12,62,72,82)及び接着層(20,69,79,97)を有することを特徴とする請求項に記載のフィルム(1,3,6,7,8,9)。 The type push film according to claim 6, wherein the Turkey of having a release layer (12,62,72,82) and adhesive layer (20,69,79,97) film (1,3, 6, 7, 8, 9). 前記型押フィルムまたは積層フィルムが機能性高分子材層に隣接する1つまたはそれより多くのラッカー層(13,18,63,68,73,78,84,90)を有することを特徴とする請求項2からのいずれかに記載のフィルム(1,3,6,7,8,9)。 The embossed film or laminated film has one or more lacquer layers (13, 18, 63, 68, 73, 78, 84, 90) adjacent to the functional polymer layer. The film (1, 3, 6, 7, 8, 9) according to any one of claims 2 to 7 . 前記導電層、半導体材料を含む前記層及び電気絶縁材料を含む前記層が透明であることを特徴とする請求項3に記載のフィルム(1,3,6,7,8,9)。   The film (1, 3, 6, 7, 8, 9) according to claim 3, wherein the conductive layer, the layer containing a semiconductor material and the layer containing an electrically insulating material are transparent. 前記フィルムが、有機半導体材料を含む層(16)、電気絶縁材料を含む層(15)及び、導電材料を含む、領域状にパターン形状に整形された、2つまたはそれより多くの層(14,17,19)を有するフィルム素子(2)であることを特徴とする請求項1に記載のフィルム(2)。 It said film, a layer containing an organic semiconductor materials (16), a layer containing an electrically insulating material (15) and includes a conductive material, shaped into a pattern shape in the area shape, two or more layers ( A film (2) according to claim 1, characterized in that it is a film element (2) having 14, 17, 19). 前記フィルム(2)が、型押フィルムまたは積層フィルム(1)を用いて基板に着けられたフィルム素子であることを特徴とする請求項10に記載のフィルム。 The film of claim 10 wherein the film (2), characterized in that a film element which is worn on a substrate using a mold press film or laminated film (1). 電気機能性が光学特徴と組み合せられていることを特徴とする請求項1から11のいずれかに記載のフィルム(8)。 A film according to any one of claims 1 to 11, the electrical functionality, characterized in that it is combined with the optical properties (8). 前記フィルムが、前記フィルムの層間で整形され、一方で、有機半導体技術を用いて作成される前記電子デバイスの層(46)をパターン形状に構造化し、他方で、光学特徴として光回折効果を生じさせる、空間構造(47)を有することを特徴とする請求項12に記載のフィルム(8)。 The film is shaped between the layers of the film, while the electronic device layer (46) created using organic semiconductor technology is structured into a pattern shape, and on the other hand, it produces a light diffraction effect as an optical feature. The film (8) according to claim 12 , characterized in that it has a spatial structure (47). 前記空間構造(47)が巨構造及び微構造の重畳によって形成され、前記巨構造が有機半導体技術を用いて作成される前記電子デバイスの層(46)のパターン付構造化に役立ち、前記微構造が前記光学特徴の生成に役立つことを特徴とする請求項13に記載のフィルム。 The spatial structure (47) is formed by superposition of a giant structure and a microstructure, and the giant structure is useful for structuring with a pattern of the layer (46) of the electronic device created using organic semiconductor technology, the microstructure The film of claim 13 , which helps to generate the optical features. 前記フィルムがホログラフィ光学層または回折層(83,84,90,91)を有することを特徴とする請求項1から14のいずれかに記載のフィルム(8)。 It said film according to any one of claims 1 to 14, characterized in that it comprises a holographic optical layers or diffractive layer (83,84,90,91) film (8). 前記フィルムが順次薄膜層系(94,95)を有することを特徴とする請求項1から15のいずれかに記載のフィルム(8)。 16. A film (8) according to any one of the preceding claims, characterized in that the film has a thin film layer system (94, 95) in sequence. 前記フィルムが装飾層を有することを特徴とする請求項1から16のいずれかに記載のフィルム。 A film according to any one of claims 1 16, wherein the film is characterized by having a decorative layer. 前記フィルム(8)が光学的セキュリティ標章をつくる2つまたはそれより多くの相互に重畳される層(83,84,90,91,94,95)を有し、有機半導体技術を用いて作成される前記電子デバイスの1つまたはそれより多くの機能層(86,87,88,89)がそのような光学活性層の間に配置されていることを特徴とする請求項1から17のいずれかに記載のフィルム(8)。 The film (8) has two or more mutually overlapping layers (83, 84, 90, 91, 94, 95) that create an optical security mark and is made using organic semiconductor technology one of claims 1 17, wherein the one or more functional layers of the electronic device (86,87,88,89) is arranged between such optically active layer being The film (8) according to crab. 前記フィルムがセキュリティ素子として用いられることを特徴とする請求項1から18のいずれかに記載のフィルム。   The film according to claim 1, wherein the film is used as a security element. 請求項1に記載のフィルム(1,3,6,7,8,9)の作成のためのプロセスにおいて、有機半導体技術を用いて作成される少なくとも1つのデバイスの1つまたはそれより多くの層(43,49,50)の構造化が熱転写またはUV転写によって実施されることを特徴とするプロセス。   A process for making a film (1, 3, 6, 7, 8, 9) according to claim 1, wherein one or more layers of at least one device made using organic semiconductor technology. Process characterized in that the structuring of (43, 49, 50) is carried out by thermal transfer or UV transfer. 構造深さが転写されるべき層(42)の厚さ以上の空間構造が前記転写されるべき層(42)に転写され、よって、前記転写されるべき層が部分的に前記転写操作により完全に切除され、前記空間構造にしたがうパターン形状に構造化された電気的機能層(43)が形成されることを特徴とする請求項20に記載のプロセス。   A spatial structure whose structure depth is greater than or equal to the thickness of the layer (42) to be transferred is transferred to the layer (42) to be transferred, so that the layer to be transferred is partially completed by the transfer operation. 21. Process according to claim 20, characterized in that an electrical functional layer (43) is formed, which is cut out and structured in a pattern shape according to the spatial structure. 前記空間構造が導電材料を含む電極層に転写され、次いで非導電材料または半導体材料を含む電気的機能層が前記電極層に被着されることを特徴とする請求項21に記載のプロセス。   The process of claim 21, wherein the spatial structure is transferred to an electrode layer comprising a conductive material, and then an electrical functional layer comprising a non-conductive material or a semiconductor material is applied to the electrode layer. 構造深さが転写されるべき層(42)の厚さより小さい空間構造が前記転写されるべき層(42)に転写されることを特徴とする請求項20に記載のプロセス。   21. Process according to claim 20, characterized in that a spatial structure whose structure depth is smaller than the thickness of the layer (42) to be transferred is transferred to the layer (42) to be transferred. 硬化時にあらかじめ定められた体積減少を受ける材料の電気的機能層(49)が前記転写層(46)に被着され、前記材料は、前記転写構造にしたがうパターン形状に構造化された機能層が硬化時に前記体積収縮によって残る被着量で、前記転写層(46)に被着されることを特徴とする請求項23に記載のプロセス。   An electrical functional layer (49) of a material that undergoes a predetermined volume reduction upon curing is applied to the transfer layer (46), and the material has a functional layer structured in a pattern shape according to the transfer structure. 24. Process according to claim 23, characterized in that it is applied to the transfer layer (46) in the amount of deposit remaining due to the volume shrinkage upon curing. 前記機能層がUV硬化性材料を含むことを特徴とする請求項24に記載のプロセス。   The process of claim 24, wherein the functional layer comprises a UV curable material. 電気的機能層(50)が前記転写層(46)に被着され、次いで前記転写構造にしたがうパターン形状に構造化された機能層(50)が残るような深さまで前記電気的機能層が、特にエッチングによって、除去されることを特徴とする請求項23に記載のプロセス。   The electrical functional layer (50) is applied to the transfer layer (46) and then the electrical functional layer is deep enough to leave a functional layer (50) structured in a pattern according to the transfer structure, 24. Process according to claim 23, characterized in that it is removed, in particular by etching. 前記空間構造が非導電材料または半導体材料を含む電気的機能層に転写され、次いで導電材料を含む電極層が前記電気的機能層に被着されることを特徴とする請求項23から26のいずれかに記載のプロセス。   27. Any one of claims 23 to 26, wherein the spatial structure is transferred to an electrical functional layer comprising a non-conductive material or a semiconductor material, and then an electrode layer comprising a conductive material is deposited on the electrical functional layer. The process described in 請求項1に記載のフィルムの作成のためのプロセスにおいて、有機半導体技術を用いて作成される少なくとも1つのデバイスの機能に必要な全てのあるいは1つまたはそれより多くの電極層、絶縁層及び半導体層が印刷プロセスによって全表面積または表面積の一部にわたってフィルム構造に導入されることを特徴とするプロセス。 A process for making a film according to claim 1, wherein all or one or more electrode layers, insulating layers and semiconductors necessary for the function of at least one device made using organic semiconductor technology. features and to pulp process that a layer is introduced into the film structure over a portion of the total surface area or surface area by a printing process. 電気的機能性及び光学的機能性が、転写操作によってつくられることを特徴とする請求項20から28のいずれかに記載のプロセス。 Process according to any one of claims 20 to 28 which electrically functional及 beauty optical functionality, characterized in that it is made by the transfer operation.
JP2004540528A 2002-10-02 2003-09-30 Film with organic semiconductor Expired - Fee Related JP4841841B2 (en)

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Application Number Priority Date Filing Date Title
DE10246241 2002-10-02
DE10246241.0 2002-10-02
PCT/DE2003/003258 WO2004032257A2 (en) 2002-10-02 2003-09-30 Film comprising organic semiconductors

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JP2006501659A JP2006501659A (en) 2006-01-12
JP2006501659A5 true JP2006501659A5 (en) 2006-11-24
JP4841841B2 JP4841841B2 (en) 2011-12-21

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US (1) US7655498B2 (en)
EP (2) EP1559147B1 (en)
JP (1) JP4841841B2 (en)
KR (1) KR101196591B1 (en)
CN (1) CN100454602C (en)
AU (1) AU2003281923A1 (en)
DE (1) DE10393887D2 (en)
ES (1) ES2439446T3 (en)
PL (1) PL213928B1 (en)
RU (1) RU2317613C2 (en)
WO (1) WO2004032257A2 (en)

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