CN109478493A - 供体衬底进行回收的方法 - Google Patents

供体衬底进行回收的方法 Download PDF

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Publication number
CN109478493A
CN109478493A CN201780042232.5A CN201780042232A CN109478493A CN 109478493 A CN109478493 A CN 109478493A CN 201780042232 A CN201780042232 A CN 201780042232A CN 109478493 A CN109478493 A CN 109478493A
Authority
CN
China
Prior art keywords
substrate
donor substrate
donor
gan
backing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780042232.5A
Other languages
English (en)
Chinese (zh)
Inventor
弗兰乔斯·J·亨利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qmat Inc
Original Assignee
Qmat Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/643,384 external-priority patent/US20180033609A1/en
Priority claimed from US15/643,370 external-priority patent/US20180019169A1/en
Application filed by Qmat Inc filed Critical Qmat Inc
Priority claimed from PCT/IB2017/054209 external-priority patent/WO2018011731A1/en
Publication of CN109478493A publication Critical patent/CN109478493A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
CN201780042232.5A 2016-07-12 2017-07-12 供体衬底进行回收的方法 Pending CN109478493A (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662361468P 2016-07-12 2016-07-12
US62/361,468 2016-07-12
US201662367911P 2016-07-28 2016-07-28
US62/367,911 2016-07-28
US15/643,384 US20180033609A1 (en) 2016-07-28 2017-07-06 Removal of non-cleaved/non-transferred material from donor substrate
US15/643,384 2017-07-06
US15/643,370 2017-07-06
US15/643,370 US20180019169A1 (en) 2016-07-12 2017-07-06 Backing substrate stabilizing donor substrate for implant or reclamation
PCT/IB2017/054209 WO2018011731A1 (en) 2016-07-12 2017-07-12 Method of a donor substrate undergoing reclamation

Publications (1)

Publication Number Publication Date
CN109478493A true CN109478493A (zh) 2019-03-15

Family

ID=65658530

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780042232.5A Pending CN109478493A (zh) 2016-07-12 2017-07-12 供体衬底进行回收的方法

Country Status (4)

Country Link
EP (1) EP3485505A1 (enExample)
JP (1) JP2019527477A (enExample)
KR (1) KR20190027821A (enExample)
CN (1) CN109478493A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110190163A (zh) * 2019-05-24 2019-08-30 康佳集团股份有限公司 图形化衬底、外延片、制作方法、存储介质及led芯片

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230321752A1 (en) * 2021-01-21 2023-10-12 Shin-Etsu Engineering Co., Ltd. Workpiece separation device and workpiece separation method
EP4290553A4 (en) * 2021-02-04 2024-04-03 Mitsubishi Electric Corporation METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
FR3120159B1 (fr) * 2021-02-23 2023-06-23 Soitec Silicon On Insulator Procédé de préparation du résidu d’un substrat donneur ayant subi un prélèvement d’une couche par délamination
JP7484773B2 (ja) * 2021-03-04 2024-05-16 信越半導体株式会社 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法及び紫外線発光素子用エピタキシャルウェーハ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224042A (ja) * 2001-12-21 2003-08-08 Soi Tec Silicon On Insulator Technologies 半導体薄層の移し換え方法とそれに使用するドナーウエハの製造方法
US20100062546A1 (en) * 2008-09-05 2010-03-11 Endo Yuta Method of manufacturing soi substrate
US20100127353A1 (en) * 2008-11-26 2010-05-27 S.O.I.Tec Silicon On Insulator Technologies, S.A. Strain engineered composite semiconductor substrates and methods of forming same
JP2014157979A (ja) * 2013-02-18 2014-08-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
WO2016007582A1 (en) * 2014-07-11 2016-01-14 Gtat Corporation Support substrate for ion beam exfoliation of a crystalline lamina

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1777735A3 (fr) * 2005-10-18 2009-08-19 S.O.I.Tec Silicon on Insulator Technologies Procédé de recyclage d'une plaquette donneuse épitaxiée
JP4519199B2 (ja) * 2007-09-03 2010-08-04 パナソニック株式会社 ウエハ再生方法およびウエハ再生装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224042A (ja) * 2001-12-21 2003-08-08 Soi Tec Silicon On Insulator Technologies 半導体薄層の移し換え方法とそれに使用するドナーウエハの製造方法
US20100062546A1 (en) * 2008-09-05 2010-03-11 Endo Yuta Method of manufacturing soi substrate
US20100127353A1 (en) * 2008-11-26 2010-05-27 S.O.I.Tec Silicon On Insulator Technologies, S.A. Strain engineered composite semiconductor substrates and methods of forming same
JP2014157979A (ja) * 2013-02-18 2014-08-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物複合基板およびその製造方法、積層ｉｉｉ族窒化物複合基板、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
WO2016007582A1 (en) * 2014-07-11 2016-01-14 Gtat Corporation Support substrate for ion beam exfoliation of a crystalline lamina

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110190163A (zh) * 2019-05-24 2019-08-30 康佳集团股份有限公司 图形化衬底、外延片、制作方法、存储介质及led芯片
CN110190163B (zh) * 2019-05-24 2020-04-28 康佳集团股份有限公司 图形化衬底、外延片、制作方法、存储介质及led芯片
US12107184B2 (en) 2019-05-24 2024-10-01 Konka Group Co., Ltd. Patterned substrate, epitaxial wafer, manufacturing method, storage medium and LED chip

Also Published As

Publication number Publication date
EP3485505A1 (en) 2019-05-22
JP2019527477A (ja) 2019-09-26
KR20190027821A (ko) 2019-03-15

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