JP6371761B2 - 光電子工学デバイスを形成するための技術 - Google Patents
光電子工学デバイスを形成するための技術 Download PDFInfo
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- JP6371761B2 JP6371761B2 JP2015510478A JP2015510478A JP6371761B2 JP 6371761 B2 JP6371761 B2 JP 6371761B2 JP 2015510478 A JP2015510478 A JP 2015510478A JP 2015510478 A JP2015510478 A JP 2015510478A JP 6371761 B2 JP6371761 B2 JP 6371761B2
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L33/26—Materials of the light emitting region
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- H01S5/00—Semiconductor lasers
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- H01S5/3027—IV compounds
Description
本特許出願は、2012年5月4日出願の米国仮特許出願第61/643180号(代理人整理番号83020−027700US−840008)、2013年5月2日出願の米国非仮特許出願第13/886129号(代理人整理番号83020−027710US−874620)に対する優先権を主張するものであり、あらゆる目的のためにその全体が本明細書に共有され援用される。
1.歪緩和基板(SRS)上に、シリコン/GaN分離済み組立体のGaN側を一時的に接合する。
2.GaN層にシリコンの分離厚さ分を選択的にエッチングする。
3.SRSの表面歪特性を変化させて、GaN層を制御された様式で緩和する。
4.緩和済みGaN層を、好ましくはGaNの熱膨張率(CTE)に適合したCTEを有する成長支持基板上に接合する(以下を参照)。
5.SRS基板の接合を解除し、成長支持基板上にGaNを残す。
6.エピタキシャル成長のためにGaN表面を準備する(即ち研磨、洗浄)。
7.例えば有機金属化学蒸着(metalorganic chemical vapor deposition:MOCVD)及びハイブリッド気相エピタキシ(hybrid vapor phase epitaxy:HVPE)を用いて、比較的高温(例えば約900〜1200℃)で追加の層を成長させる。
1.ある表面領域及びある厚さを有する半導体基板を準備する(402);
2.任意に、表面領域上に追加の材料の層を形成する(404);
3.ある厚さによって表面領域から分離された分割領域を形成するために、半導体基板の表面領域(その上に形成された追加の材料の層を含む)を、線形加速器を用いて生成した第1の多数の高速粒子に曝露する(406);
4.表面領域と分割領域との間の、いずれの追加の材料を含むある厚さの半導体基板を分離する(408);
5.任意に、例えば上で定義した様々なSRS改質ステップを用いて、材料の分離厚さ分を改質し(例えば追加の材料の応力を軽減するためにエッチングによって部分的に又は完全に除去する)、その歪状態をより望ましい状態に改質する(410);
6.任意に、材料又は追加の材料の分離厚さ分を、取り外し可能に又は恒久的に基板(CTE適合基板であってよい)に接合する(412);
7.材料の分離厚さ分又は残りの追加の材料の表面を研磨する(414);
8.任意に、残っている追加の材料の厚さを増大させるか、又は追加の材料を形成する(416);
9.任意に、材料又は追加の材料の分離厚さ分から基板を取り外す(418);
10.所望の他のステップを実行する。
Ec=Ep+[分割前線応力エネルギ]
図12は、本発明による基板10の簡略断面図である。この図は単なる例示であり、本出願の請求項の範囲を限定するものではない。単なる例として、基板10は、除去されることになる材料領域12を含むシリコンウェハであり、基板材料から得られる薄く比較的均一なフィルムである。シリコンウェハ10は上面14、底面16、厚さ18を含む。基板10はまた、第1の側(側面1)及び第2の側(側面2)を含む(これらはこれ以降も図面中で参照される)。材料領域12はまた、シリコンウェハの厚さ18内の厚さ20を含む。新規の技術は、以下の一連のステップを用いて材料領域12を除去する。
本発明によるシリコンオンインシュレータ基板を製造するためのプロセスは、以下のように簡潔にまとめることができる。
Claims (28)
- 追加の材料の層を支持する被加工物材料を含む被加工物を準備すること;
前記追加の材料の層を通して多数の粒子を導入し、前記被加工物に分割領域を形成すること;
前記追加の材料の層を含む被加工物の分離厚さ分を、残りの前記被加工物から分割するために、前記分割領域にエネルギを印加すること;
前記追加の材料の層内の応力のレベルを緩和するために、前記分離厚さ分を加工すること;及び
前記追加の材料の層の熱膨張率と同一の熱膨張率を有する基板に、加工された前記分離厚さ分を接合すること
を含む、方法。 - 前記追加の材料の層は、ある温度において前記被加工物材料の上部に形成される、請求項1に記載の方法。
- 前記応力のレベルを緩和させることは、前記被加工物材料を除去することを含む、請求項1に記載の方法。
- 前記被加工物材料を除去することは、エッチングを含む、請求項3に記載の方法。
- 前記応力のレベルを緩和させることは、前記分離厚さ分を歪緩和基板に接合すること、及びその後前記歪緩和基板の特性を変化させることを含む、請求項1に記載の方法。
- 前記歪緩和基板は圧電材料を含み、
前記特性を変化させることは、前記圧電材料の寸法を変化させることを含む、請求項5に記載の方法。 - 前記歪緩和基板は前記分離厚さ分に接合される表面を含み、
前記特性を変化させることは、前記表面を固相から液相に変化させることを含む、請求項5に記載の方法。 - 前記被加工物を準備することは、前記追加の材料の層としてのGaNを支持する単結晶シリコン被加工物材料を準備することを含む、請求項1に記載の方法。
- 前記単結晶シリコン被加工物材料を準備することは、(111)単結晶シリコン被加工物材料を準備することを含む、請求項8に記載の方法。
- 前記GaNの追加の材料の層は、約700〜900℃での低温エピタキシャル成長プロセスによって形成された、厚さ約0.1〜1μmの層を含む、請求項9に記載の方法。
- 前記接合することは、前記追加の材料の層と前記基板との間を取り外し可能に接合することを含む、請求項1に記載の方法。
- 前記取り外し可能に接合することは、前記追加の材料の層の表面粗度及び/又は前記基板の表面粗度によるものである、請求項11に記載の方法。
- 前記被加工物の前記分離厚さは約10〜100μmである、請求項1に記載の方法。
- 前記被加工物を準備することは、前記追加の材料の層としてのGaNを支持するシリコン又はサファイア被加工物材料を準備することを含む、請求項1に記載の方法。
- 境界面に追加の材料の層を支持する被加工物材料を含む被加工物を準備すること;
多数の加速粒子を前記追加の材料の層を通して導入し、前記境界面に又は前記境界面の近傍に分割領域を形成すること;
前記追加の材料の層を含む前記被加工物の分離厚さ分を、残りの前記被加工物から分割するために、前記分割領域にエネルギを印加すること;
前記追加の材料の層内の応力のレベルを緩和するために、前記分離厚さ分を加工すること;及び
前記追加の材料の層の熱膨張率と同一の熱膨張率を有する基板に、加工された前記分離厚さ分を接合すること
を含む、方法。 - 前記追加の材料の層は、ある温度において前記被加工物材料の上部に形成される、請求項15に記載の方法。
- 前記応力のレベルを緩和させることは、前記被加工物材料を除去することを含む、請求項15に記載の方法。
- 前記被加工物材料を除去することは、エッチングを含む、請求項17に記載の方法。
- 前記応力のレベルを緩和させることは、前記分離厚さ分を歪緩和基板に接合すること、及びその後前記歪緩和基板の特性を変化させることを含む、請求項15に記載の方法。
- 前記歪緩和基板は圧電材料を含み、
前記特性を変化させることは、前記圧電材料の寸法を変化させることを含む、請求項19に記載の方法。 - 前記歪緩和基板は、前記分離厚さ分に接合される表面を含み、
前記特性を変化させることは、前記表面を固相から液相に変化させることを含む、請求項19に記載の方法。 - 前記被加工物を準備することは、前記追加の材料の層としてのGaNを支持する単結晶シリコン被加工物材料を準備することを含む、請求項15に記載の方法。
- 前記単結晶シリコン被加工物材料を準備することは、(111)単結晶シリコン被加工物材料を準備することを含む、請求項22に記載の方法。
- 前記GaNの追加の材料の層は、約700〜900℃での低温エピタキシャル成長プロセスによって形成された、厚さ約0.1〜1μmの層を含む、請求項22に記載の方法。
- 前記接合することは、前記追加の材料の層と前記基板との間を取り外し可能に接合することを含む、請求項15に記載の方法。
- 前記取り外し可能に接合することは、前記追加の材料の層の表面粗度及び/又は前記基板の表面粗度によるものである、請求項25に記載の方法。
- 前記被加工物の分離厚さは約10〜100μmである、請求項15に記載の方法。
- 前記被加工物を準備することは、前記追加の材料の層としてのGaNを支持するシリコン又はサファイア被加工物材料を準備することを含む、請求項15に記載の方法。
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2013
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- 2013-05-03 JP JP2015510478A patent/JP6371761B2/ja active Active
- 2013-05-03 KR KR1020147029681A patent/KR20150013134A/ko not_active Application Discontinuation
- 2013-05-03 CN CN201380023625.3A patent/CN104272436A/zh active Pending
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US20170084778A1 (en) | 2017-03-23 |
EP2845220B1 (en) | 2020-02-12 |
CN104272436A (zh) | 2015-01-07 |
JP2015523712A (ja) | 2015-08-13 |
US20170358704A1 (en) | 2017-12-14 |
US20130292691A1 (en) | 2013-11-07 |
EP2845220A4 (en) | 2015-12-23 |
US9257339B2 (en) | 2016-02-09 |
KR20150013134A (ko) | 2015-02-04 |
WO2013166381A1 (en) | 2013-11-07 |
EP2845220A1 (en) | 2015-03-11 |
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