CN109411424A - 一种具有散热结构的晶圆封装 - Google Patents
一种具有散热结构的晶圆封装 Download PDFInfo
- Publication number
- CN109411424A CN109411424A CN201811034300.6A CN201811034300A CN109411424A CN 109411424 A CN109411424 A CN 109411424A CN 201811034300 A CN201811034300 A CN 201811034300A CN 109411424 A CN109411424 A CN 109411424A
- Authority
- CN
- China
- Prior art keywords
- solder mask
- thickness
- conducting layer
- metal heat
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 229910000679 solder Inorganic materials 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000005439 thermosphere Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811034300.6A CN109411424B (zh) | 2016-11-27 | 2016-11-27 | 一种具有散热结构的晶圆封装 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811034300.6A CN109411424B (zh) | 2016-11-27 | 2016-11-27 | 一种具有散热结构的晶圆封装 |
CN201611058184.2A CN106449561B (zh) | 2016-11-27 | 2016-11-27 | 一种具有散热结构的晶圆封装 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611058184.2A Division CN106449561B (zh) | 2016-11-27 | 2016-11-27 | 一种具有散热结构的晶圆封装 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109411424A true CN109411424A (zh) | 2019-03-01 |
CN109411424B CN109411424B (zh) | 2020-11-27 |
Family
ID=58218892
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811034300.6A Active CN109411424B (zh) | 2016-11-27 | 2016-11-27 | 一种具有散热结构的晶圆封装 |
CN201811034100.0A Withdrawn CN109411422A (zh) | 2016-11-27 | 2016-11-27 | 具有散热结构的晶圆封装 |
CN201611058184.2A Active CN106449561B (zh) | 2016-11-27 | 2016-11-27 | 一种具有散热结构的晶圆封装 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811034100.0A Withdrawn CN109411422A (zh) | 2016-11-27 | 2016-11-27 | 具有散热结构的晶圆封装 |
CN201611058184.2A Active CN106449561B (zh) | 2016-11-27 | 2016-11-27 | 一种具有散热结构的晶圆封装 |
Country Status (1)
Country | Link |
---|---|
CN (3) | CN109411424B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112449477B (zh) * | 2019-08-27 | 2022-04-15 | 宏启胜精密电子(秦皇岛)有限公司 | 电路板的制造方法及电路板 |
CN115132679A (zh) * | 2022-08-30 | 2022-09-30 | 之江实验室 | 一种具有热电制冷系统的晶圆级封装结构 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372409B1 (en) * | 1999-05-07 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Bonds pads equipped with heat dissipating rings and method for forming |
US20030092221A1 (en) * | 2000-12-01 | 2003-05-15 | Chien-Ping Huang | Super low profile package with high efficiency of heat dissipation |
JP2003282797A (ja) * | 2002-03-25 | 2003-10-03 | Oki Electric Ind Co Ltd | 半導体装置および半導体モジュールの製造方法 |
CN1486509A (zh) * | 2001-06-13 | 2004-03-31 | 先进封装解决方案私人有限公司 | 形成晶片级别芯片规模封装的方法及由此形成的封装 |
CN101383301A (zh) * | 2007-09-03 | 2009-03-11 | 飞思卡尔半导体公司 | 形成倒装芯片突起载体式封装的方法 |
CN102931094A (zh) * | 2011-08-09 | 2013-02-13 | 万国半导体股份有限公司 | 具有增大焊接接触面的晶圆级封装结构及制备方法 |
TW201342542A (zh) * | 2012-04-11 | 2013-10-16 | Taiwan Semiconductor Mfg | 半導體封裝結構及其製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6577013B1 (en) * | 2000-09-05 | 2003-06-10 | Amkor Technology, Inc. | Chip size semiconductor packages with stacked dies |
US8198716B2 (en) * | 2007-03-26 | 2012-06-12 | Intel Corporation | Die backside wire bond technology for single or stacked die package |
CN104795372A (zh) * | 2015-03-27 | 2015-07-22 | 江阴长电先进封装有限公司 | 一种指纹识别传感器芯片的封装结构 |
CN104900768A (zh) * | 2015-04-14 | 2015-09-09 | 芜湖九瓷电子科技有限公司 | 一种led用氧化铝陶瓷基板制造方法 |
-
2016
- 2016-11-27 CN CN201811034300.6A patent/CN109411424B/zh active Active
- 2016-11-27 CN CN201811034100.0A patent/CN109411422A/zh not_active Withdrawn
- 2016-11-27 CN CN201611058184.2A patent/CN106449561B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372409B1 (en) * | 1999-05-07 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Bonds pads equipped with heat dissipating rings and method for forming |
US20030092221A1 (en) * | 2000-12-01 | 2003-05-15 | Chien-Ping Huang | Super low profile package with high efficiency of heat dissipation |
CN1486509A (zh) * | 2001-06-13 | 2004-03-31 | 先进封装解决方案私人有限公司 | 形成晶片级别芯片规模封装的方法及由此形成的封装 |
JP2003282797A (ja) * | 2002-03-25 | 2003-10-03 | Oki Electric Ind Co Ltd | 半導体装置および半導体モジュールの製造方法 |
CN101383301A (zh) * | 2007-09-03 | 2009-03-11 | 飞思卡尔半导体公司 | 形成倒装芯片突起载体式封装的方法 |
CN102931094A (zh) * | 2011-08-09 | 2013-02-13 | 万国半导体股份有限公司 | 具有增大焊接接触面的晶圆级封装结构及制备方法 |
TW201342542A (zh) * | 2012-04-11 | 2013-10-16 | Taiwan Semiconductor Mfg | 半導體封裝結構及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109411424B (zh) | 2020-11-27 |
CN109411422A (zh) | 2019-03-01 |
CN106449561A (zh) | 2017-02-22 |
CN106449561B (zh) | 2018-09-28 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201111 Address after: Room 704, building 5, No. 556, Changjiang Road, hi tech Zone, Suzhou City, Jiangsu Province Applicant after: SUZHOU YUDESHUI ELECTRICAL TECHNOLOGY Co.,Ltd. Address before: 213032 College of civil engineering and architecture, Changzhou Institute of Technology, 666, Liaohe Road, Xinbei District, Changzhou, Jiangsu Applicant before: Lu Weizheng |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240402 Address after: 518000, Building B3, Block 901-18B, Phase I, Baoneng Science and Technology Park (South Zone), Qinghu Industrial Zone, Gangtou Community, Bantian Street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Paisidi Semiconductor Co.,Ltd. Country or region after: China Address before: Room 704, building 5, No. 556, Changjiang Road, high tech Zone, Suzhou, Jiangsu 215000 Patentee before: SUZHOU YUDESHUI ELECTRICAL TECHNOLOGY Co.,Ltd. Country or region before: China |