CN109390270A - 升降销组件 - Google Patents

升降销组件 Download PDF

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CN109390270A
CN109390270A CN201811109709.XA CN201811109709A CN109390270A CN 109390270 A CN109390270 A CN 109390270A CN 201811109709 A CN201811109709 A CN 201811109709A CN 109390270 A CN109390270 A CN 109390270A
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support surface
pin assemblies
substrate
lifting pin
support
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CN109390270B (zh
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邦妮·T·基亚
贾勒帕里·拉维
曼朱纳塔·科普帕
维诺德·孔达·普拉斯
振雄·马修·蔡
阿拉维德·米亚尔·卡马斯
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

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Abstract

于此提供升降销组件的实施方式。在一些实施方式中，升降销组件包含：伸长底座，由第一材料所形成，并具有形成在底座的远端中的第一特征结构，以与尖端接合并可移除地支撑尖端；及尖端，由不同于第一材料的第二材料所形成，并在尖端的第一侧及尖端的相对第二侧上具有支撑表面，其中相对第二侧包含第二特征结构，以匹配底座的第一特征结构，以可移除地将尖端保持于底座的远端上。

Description

升降销组件
本申请是申请日为2015年5月28日、申请号为201580026810.7、名称为“升降销组件”的发明专利申请的分案申请。
领域
本公开内容的实施方式一般涉及用以处理基板的设备。
背景
升降销延伸穿过基板支撑件以升降基板离开基板支撑件，以帮助置放基板于基板支撑件上及移除基板。传统地，升降销由金属所形成以改善刚性。发明人观察到在基板及金属表面间的冲击导致颗粒产生在基板上及处理腔室中。
在一些处理中，为维持处理均匀性及确保处理腔室的最理想性能，执行诸如粘贴处理的调节操作，其中覆盖层被施加至沉积在处理腔室的表面上的材料的上方，以防止所沉积的材料在后续的处理期间从处理腔室的表面剥落并污染基板。于粘贴处理期间，遮盘(shutter disk)可放置于设置在处理腔室中的基板支撑件的上方，以防止任何材料沉积在基板支撑件上。
此外，当处理腔室开启时，待沉积于基板上的含靶材材料可能开始氧化。因此，可执行预烧处理，以移除在靶材上的氧化层。于预烧处理期间，遮盘可被放置于设置在处理腔室中的基板支撑件上，以防止任何材料沉积在基板支撑件上。
虽然发明人相信完全排除硬的升降销表面将解决在基板的背侧上颗粒产生的问题，发明人观察到需要硬的表面用以接触遮盘，遮盘相较于基板是较重的且会变得较热。
因此，发明人提供了一种改良的升降销组件。
概述
于此提供一种用于处理基板的设备的实施方式。在一些实施方式中，升降销组件包含：伸长底座，由第一材料所形成，并具有形成在底座的远端中的第一特征结构，以与尖端接合并可移除地支撑尖端；及尖端，由不同于第一材料的第二材料所形成，并在尖端的第一侧及尖端的相对第二侧上具有支撑表面，其中相对第二侧包含第二特征结构，以匹配底座的第一特征结构，以可移除地将尖端保持于底座的远端上。
在一些实施方式中，升降销组件包含升降销，升降销包括第一材料及第二材料，第一材料提供第一支撑表面且第二材料提供第二支撑表面，其中第一材料与第二材料不同，其中第一材料是导电聚合物，且其中第二材料为金属的。
在一些实施方式中，基板处理腔室包含腔室本体，腔室本体界定内空间；基板支撑件，设置于内空间中，基板支撑件包含多个通道，多个通道从基板支撑件的下表面延伸至基板支撑件的上表面；及多个升降销组件，用以延伸穿过多个通道，以帮助基板或遮盘的置放或移除，升降销组件的每一者包含升降销，升降销包括第一材料及第二材料，第一材料提供第一支撑表面且第二材料提供第二支撑表面，其中第一材料与第二材料不同，其中第一材料是导电聚合物，且其中第二材料为金属的。
本公开内容的其他及进一步的实施方式说明于下。
附图简要说明
本公开内容的实施方式(于上所简单地摘要且于下详细讨论)可参照描绘于随附的附图中的本公开内容的示例性实施方式而理解。然而，附随的附图仅示例本公开内容的典型实施方式且因此不被视为限制范围，因为本公开内容可采用其他等效的实施方式。
图1描绘适合与依据本公开内容的一些实施方式的升降销组件一起使用的处理腔室。
图2描绘依据本公开内容的一些实施方式的升降销组件。
图3A-B描绘依据本公开内容的一些实施方式的升降销组件。
图4A-B描绘依据本公开内容的一些实施方式的升降销组件。
图5A-B描绘依据本公开内容的一些实施方式的升降销组件。
图6描绘依据本公开内容的一些实施方式的图5A-B的升降销组件的截面图。
为帮助了解，尽可能使用相同的元件符号以指定共通于附图的相同元件。附图并未依据尺寸而绘制且可为清晰而简化。一个实施方式的附图及特征可有利地并入其他实施方式中而不需进一步引用。
具体描述
于此提供升降销组件的实施方式。升降销组件的实施方式可有利地减少在基板的背侧上的颗粒生成，同时保持当遮盘存在时支撑遮盘的能力。本发明的升降销组件的实施方式可有利地被轻易地翻新至现存的处理系统，由此避免对现存处理系统不必要且高昂的修改。尽管可用于许多基板处理设备，于下所公开的设备以与物理气相沉积(PVD)处理腔室有关的方式做示例性地说明。
图1为与本公开内容的一些实施方式一起使用的示例性处理腔室100的示意图。在一些实施方式中，处理腔室100可为结合以形成多腔室处理系统(如，群集工具)的多个腔室的一者。替代地，处理腔室100可为独立的处理腔室。在一些实施方式中，处理腔室100可为沉积腔室，例如，PVD腔室。替代地，处理腔室100可为任何合适的处理腔室，其中可使用遮盘组件以保护基板支撑件于腔室/靶材清洁或调节处理期间免于损害。
处理腔室100包含腔室本体102和盖组件104，腔室本体102和盖组件104界定可抽空的处理空间106。腔室本体102大体包含一或多个侧壁108及底部110。一或多个侧壁108可为单一圆形侧壁或在具有非圆形配置的处理腔室中的多个侧壁。侧壁大体包含遮盘组件端口112。遮盘组件端口112经配置以当遮盘组件140在撤回位置中时，允许遮盘组件140的至少一部分通过遮盘组件端口112。外壳116大体覆盖遮盘组件端口112，以维持在处理空间106内的真空的完整性。额外的口可设置于侧壁中，诸如可密封进出口，用以提供基板114从处理腔室100的进出。泵送口可设置于腔室本体102的侧壁及/或底部中，且耦接至抽空并控制在处理空间106内的压力的泵送系统。在其他实施方式中，位在处理腔室100的外侧的遮件库(shutter garage)(图未示)可于当遮盘组件140未使用时存储遮盘组件140，且遮盘组件140可通过在处理腔室100中的开口(图未示)而移入处理腔室100。
腔室本体102的盖组件104大体支撑环形屏蔽件118，环形屏蔽件118支撑阴影环120。阴影环120大体经配置以限制沉积至通过阴影环120的中央而暴露的基板114的一部分。盖组件104大体包括靶材122及磁控管124。
靶材122提供于沉积处理期间在基板114上沉积的材料，同时磁控管124强化于处理期间的靶材材料的均匀损耗。靶材122及基板支撑件126由功率源128相对彼此而偏压。惰性气体(例如，氩)经由气源130而被供应至处理空间106。等离子体由气体而形成于基板114和靶材122间。在等离子体内的离子被加速朝向靶材122并使得材料变得从靶材122移出。移出的靶材材料被吸引朝向基板114并于基板114上沉积材料膜。
基板支撑件126大体设置于腔室本体102的底部110上并于处理期间支撑基板114。升降销组件133可包含安装于平台117上的多个升降销109，平台117连接至轴111，轴111耦接至用以升高及降低升降销组件133的第二升降机构135，使得基板114或遮盘可被放置于基板支撑件126上或从基板支撑件126移除。基板支撑件126包含通道121(如，穿孔)，以接收升降销109。波纹管组件131耦接于平台117和底部110间，以提供柔性的密封，柔性的密封于升降销组件133的垂直移动期间维持腔室的真空。
遮盘组件机构132大体设置邻近于基板支撑件126。遮盘组件机构132大体包含叶片134及致动器136，叶片134支撑遮盘组件140，且致动器136由轴138而耦接至叶片134，以控制叶片134的位置。
叶片134可在图1中所示的收回或清洁位置及第二位置间移动，第二位置置放遮盘组件140使其与基板支撑件126实质同心。在第二位置中，遮盘组件140可于(在PVD腔室中的)靶材预烧及(在基板预清洁腔室中的)腔室粘贴处理期间(通过使用升降销)被传送至基板支撑件126。叶片134在靶材预烧及腔室粘贴处理之后被回送至收回位置。致动器136可为适于通过一角度而旋转轴138的任何装置，该角度为移动叶片134于清洁位置及第二位置间的角度。在与本公开内容一致的其他实施方式中，置放用以处理的基板114的机器人机构也可被使用，以将遮盘组件140移动至定位以保护基板支撑件126。
图2描绘依据本公开内容的一些实施方式的升降销209的上部的示意图。升降销209包含伸长底座204，伸长底座204在远端具有第一特征结构206。第一特征结构206与尖端202接合并维持尖端202，尖端202用以支撑基板或遮盘于尖端202上。尖端202包含经调整尺寸和形状以由第一特征结构206所保持的第二特征结构208。在一些实施方式中，第一特征结构206可为夹头(collet)且第二特征结构为待嵌入至夹头并由夹头所啮合的锥形表面，以将尖端202耦接至伸长底座204。在其他实施方式中，尖端202的第二特征结构可被螺入以啮合在第一特征结构206中的对应的螺纹。为了减少在基板的背侧上的颗粒产生，尖端202由导电聚合物(例如，可抵抗温度高达约400℃)所形成。伸长底座204由金属(例如，不锈钢)所形成。此聚合物有利地防止颗粒产生在基板的背侧上，同时维持支撑热且重的遮盘的能力。
图3A及图3B描绘依据本公开内容的一些实施方式的升降销309的上部的示意图。升降销309包含延伸穿过护套304的销302。销302由第一材料所形成且护套304由与第一材料不同的第二材料所形成。在一些实施方式中，第一材料为导电聚合物而第二材料为金属的。销302提供第一支撑表面306，第一支撑表面306用以将基板支撑于第一支撑表面306上。护套304提供第二支撑表面308，第二支撑表面308用以将遮盘支撑于第二支撑表面308上。销302延伸越过第二支撑表面308，使得第一和第二支撑表面306、308示偏离的。如图3A中所示，遮盘包含凹陷(诸如环型沟槽310)，以有利地将遮盘置中于升降销组件133上。环形沟槽310经调整尺寸和形状，使得当遮盘被放置于升降销组件之上时，销302延伸进入环形沟槽310并与遮盘相隔距离D1。在一些实施方式中，D1可为至少0.01英寸。因此，遮盘放置于护套304的第二支撑表面308上。如图3B中所示，当基板被放置于升降销组件133上时，基板放置于销302的第一支撑表面306上。因为销302延伸越过护套304，基板从未接触护套304，由此避免在基板的背侧上的颗粒产生。在一些实施方式中，第一支撑表面306可为圆形，以减少销302和基板间的接触面积。
图4A及图4B描绘依据本公开内容的一些实施方式的升降销409的示意图。升降销409包含延伸穿过护套404的销402。销402由第一材料所形成且护套404由第二材料所形成。在一些实施方式中，第一材料为导电聚合物而第二材料为金属的。在其他实施方式中，第一和第二材料皆为金属的(如，不锈钢)。销402包含套环(collar)406，弹簧408设置于套环406下方。弹簧408延伸于套环406和平台117间。当基板被放置于升降销409上时，弹簧408为未压缩状态中。当遮盘被放置于升降销409上时，弹簧408为压缩状态中。弹簧408经选择使得弹簧常数足以支撑基板的重量并保持未压缩。所需的特定弹簧常数可通过基板及遮盘各自的重量及支撑基板和遮盘的销的数量(如，三个或更多个)而决定。当遮盘被放置于销402上时，遮盘的重量压缩弹簧408使得遮盘放置于护套404的上支撑表面414上。聚合物尖端412设置于销402上。若销402是金属的，则聚合物尖端412有利地防止在基板的背侧上的颗粒产生。在一些实施方式中，聚合物尖端412可能为球。
图5A及图5B描绘依据本公开内容的一些实施方式的升降销509的示意图。升降销509包含延伸穿过护套504的销502。销502由第一材料所形成且护套504由与第一材料不同的第二材料所形成。在一些实施方式中，第一材料为导电聚合物而第二材料为金属的。升降销509还包含锁定机构506，锁定机构506移动销502至上升(图5B)或下降(图5A)位置。锁定机构506包含致动器508及弹簧514，致动器508具有延伸穿过平台117的下面部分，且弹簧514偏压锁定机构506朝向平台117。为了移动销502至两个位置的任一者，升降销组件133降低，直到致动器508压抵处理腔室100的底部110，并接着升降离开底部110。致动器508具有长度D2，D2够长以当升降销组件133被降低时接触处理腔室100的底部110，由此降低致动器508。因此，销502被朝上推动并接着被降低至置放位置(上升或下降位置)。为移动销502至其他位置，升降销组件133再次被降低直到致动器508被压抵处理腔室100的底部110，并接着升降离开底部110。当基板将被放置于升降销509上时，锁定机构506被致动以移动销502至上升位置，使得基板放置于销502的第一支撑表面510上(图5B)。当遮盘将被放置于升降销509上时，锁定机构506被致动以移动销502至下降位置，使得遮盘放置于护套504的第二支撑表面512上。
如图6中所示，锁定机构506包含在销的下端处的第一凸轮516，第一凸轮516与在致动器508的上端处的第二凸轮518啮合。第一凸轮516具有第一轮廓，且第二凸轮518具有第二轮廓。围绕第一凸轮516的护套504的内表面包含由多个通道所隔开的多个突出物520。在放置位置中(显示于图6中)，第一凸轮516放置于多个突出物520上或延伸进入多个通道。当升降销组件133被降低且致动器508被推上时，第二凸轮518压抵第一凸轮516，由此推动销502向上。第二凸轮518的第二轮廓经配置以当第二凸轮518啮合第一凸轮516时旋转第一凸轮516(及销502)。当升降销组件133被升高时，弹簧514迫使销502回到放置位置，于放置位置中第一凸轮516不是置放抵住多个突出物520，就是延伸穿过在多个突出物520之间的通道。销502的旋转帮助在销502的上升位置和下降位置间切换，因为销不是置放于多个突出物520上，就是延伸穿过在多个突出物520之间的通道。
虽然前面部分涉及本公开内容的实施方式，本公开内容的其他及进一步的实施方式可经设计而不背离本公开内容的基本范围。

Claims (15)

1.一种升降销组件，包括：
平台；及
升降销，从所述平台延伸并包括第一材料及第二材料，所述第一材料提供第一支撑表面且所述第二材料提供第二支撑表面，其中所述升降销包含护套和延伸经过所述护套的销，并且其中所述第一支撑表面为所述销的上表面，且所述第二支撑表面为所述护套的上表面，其中所述第一支撑表面位于所述第二支撑表面的上方，并且其中所述销在第一位置和第二位置间是可移动的，所述升降销组件进一步包括：
弹簧，支撑所述销的套环且在所述第一位置中的未压缩状态及在所述第二位置中的压缩状态间是可移动的，其中所述弹簧具有弹簧常数，使得当基板设置于所述升降销组件上时，所述销位于所述第一位置中，且当遮盘设置于所述升降销组件上时，所述销位于所述第二位置中。
2.如权利要求1所述的升降销组件，其中所述第一支撑表面是圆形的。
3.如权利要求1所述的升降销组件，进一步包括：
聚合物尖端，设置在所述销的上表面上，其中所述第一支撑表面是所述聚合物尖端的上表面且所述第二支撑表面是所述护套的上表面。
4.如权利要求3所述的升降销组件，其中在所述第一位置中，所述第一支撑表面位于所述第二支撑表面的上方，且在所述第二位置中，所述第一支撑表面与所述第二支撑表面齐平或位于在所述第二表面的下方。
5.如权利要求1所述的升降销组件，其中所述第一材料是导电聚合物，且所述第二材料是金属的。
6.如权利要求1所述的升降销组件，其中所述第一材料和所述第二材料是金属的。
7.如权利要求1所述的升降销组件，其中所述弹簧设置在所述套环和所述平台间。
8.如权利要求1所述的升降销组件，其中所述套环的向上垂直移动受到所述护套的水平部分的约束，并且向下垂直移动受到处于压缩状态的弹簧的约束。
9.一种升降销组件，包括：
平台；及
升降销，从所述平台延伸并包括第一材料及第二材料，所述第一材料提供第一支撑表面且所述第二材料提供第二支撑表面，其中所述升降销包含护套和延伸经过所述护套的销，并且其中所述第一支撑表面为所述销的上表面，且所述第二支撑表面为所述护套的上表面，且其中所述第一支撑表面位于所述第二支撑表面的上方，且
所述升降销组件进一步包括锁定机构，所述锁定机构在第一位置和第二位置间是可移动的，
其中在所述第一位置中，所述第一支撑表面位于所述第二支撑表面的下方，使得当存在遮盘时，所述遮盘放置于所述第二支撑表面上，且
其中在所述第二位置中，所述第一支撑表面位于所述第二支撑表面的上方，使得当存在基板时，所述基板放置于所述第一支撑表面上。
10.如权利要求9所述的升降销组件，进一步包括：
弹簧，所述弹簧介于所述锁定机构和所述护套的水平部分之间。
11.如权利要求9所述的升降销组件，其中所述第一材料是导电聚合物，且所述第二材料是金属的。
12.如权利要求9所述的升降销组件，其中所述第一材料和所述第二材料是金属的。
13.如权利要求9所述的升降销组件，其中所述锁定机构包括：
第一凸轮，位于所述销的下端处，所述第一凸轮具有第一轮廓；
致动器，包含下部和上部，所述下部延伸穿过所述平台且所述上部包含具有第二轮廓的第二凸轮；及
多个突出物，设置于所述护套的内表面上，且由多个通道隔开。
14.如权利要求13所述的升降销组件，其中当所述升降销组件被降低时，所述致动器由处理腔室的底部而降低。
15.一种基板处理腔室，包括：
腔室本体，界定内空间；
基板支撑件，设置于所述内空间中，所述基板支撑件包含多个通道，所述多个通道从所述基板支撑件的下表面延伸至所述基板支撑件的上表面；及
多个升降销，用以延伸穿过所述多个通道，以当基板或遮盘存在时，支撑所述基板或所述遮盘，其中每一升降销是如权利要求1、9和13任一项中所述的升降销组件。
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