TW201601245A - 舉升銷組件 - Google Patents

舉升銷組件 Download PDF

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TW201601245A
TW201601245A TW104116299A TW104116299A TW201601245A TW 201601245 A TW201601245 A TW 201601245A TW 104116299 A TW104116299 A TW 104116299A TW 104116299 A TW104116299 A TW 104116299A TW 201601245 A TW201601245 A TW 201601245A
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lift pin
pin assembly
substrate
support surface
support
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TWI714530B (zh
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賈波妮T
拉菲傑立巴利
高帕曼裘那薩
普拉瑟維諾高達
蔡振雄
卡曼司亞拉文德密亞
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應用材料股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C30CRYSTAL GROWTH
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    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors

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Abstract

於此提供舉升銷組件的實施例。在一些實施例中,舉升銷組件包含:細長底座,由第一材料所形成,並具有形成在底座之遠端中的第一特徵結構,以與尖端接合並可移除地支撐尖端;及尖端,由不同於第一材料之第二材料所形成,並在尖端的第一側及尖端的相對第二側上具有支撐表面,其中相對第二側包含第二特徵結構,以匹配底座的第一特徵結構,以可移除地將尖端保持於底座的遠端上。

Description

舉升銷組件
本揭露書的實施例大體關於用以處理基板的設備。
舉升銷延伸穿過基板支撐件以舉升基板離開基板支撐件,以幫助置放基板於基板支撐件上及移除基板。傳統地,舉升銷係由金屬所形成以改善剛性。發明人觀察到在基板及金屬表面間的衝擊導致顆粒產生在基板上及處理腔室中。
在一些處理中,為維持處理均勻性及確保處理腔室的最理想性能,執行諸如黏貼處理之調節操作,其中覆蓋層被施加至沉積在處理腔室之表面上的材料的上方,以防止所沉積之材料在後續的處理期間從處理腔室之表面剝落並汙染基板。於黏貼處理期間,遮盤可放置於設置在處理腔室中的基板支撐件之上方,以防止任何材料沉積在基板支撐件上。
此外,當處理腔室開啟時,待沉積於基板上之含靶材材料可能開始氧化。因此,可執行預燒處理,以移除在靶材上的氧化層。於預燒處理期間,遮盤可被放置於設置在處理腔室中的基板支撐件上,以防止任何材料沉積在基板支撐件上。
雖然發明人相信完全排除硬的舉升銷表面將解決在基板之背側上顆粒產生的問題,發明人觀察到需要硬的表面用以接觸遮盤,遮盤相較於基板係較重的且會變得較熱。
因此,發明人提供了一種改良的舉升銷組件。
於此提供一種用於處理基板之實施例。在一些實施例中,舉升銷組件包含:細長底座,由第一材料所形成,並具有形成在底座之遠端中的第一特徵結構,以與尖端接合並可移除地支撐尖端;及尖端,由不同於第一材料之第二材料所形成,並在尖端的第一側及尖端的相對第二側上具有支撐表面,其中相對第二側包含第二特徵結構,以匹配底座的第一特徵結構,以可移除地將尖端保持於底座的遠端上。
在一些實施例中,舉升銷組件包含舉升銷,舉升銷包括第一材料及第二材料,第一材料提供第一支撐表面且第二材料提供第二支撐表面,其中第一材料與第二材料不同,其中第一材料係導電聚合物,且其中第二材料為金屬的。
在一些實施例中,基板處理腔室包含腔室本體,腔室本體界定內容積;基板支撐件,設置於內容積中,基板支撐件包含複數個通道,複數個通道從基板支撐件的下表面延伸至基板支撐件的上表 面;及複數個舉升銷組件,用以延伸穿過複數個通道,以幫助基板或遮盤的置放或移除,舉升銷組件之每一者包含舉升銷,舉升銷包括第一材料及第二材料,第一材料提供第一支撐表面且第二材料提供第二支撐表面,其中第一材料與第二材料不同,其中第一材料係導電聚合物,且其中第二材料為金屬的。
本揭露書的其他及進一步的實施例係說明於下。
100‧‧‧處理腔室
102‧‧‧腔室本體
104‧‧‧蓋組件
106‧‧‧處理容積
108‧‧‧致動器
109‧‧‧舉升銷
110‧‧‧底部
111‧‧‧軸
112‧‧‧組件埠
114‧‧‧基板
116‧‧‧外殼
117‧‧‧平台
118‧‧‧屏蔽件
120‧‧‧陰影環
121‧‧‧通道
122‧‧‧靶材
124‧‧‧磁控管
126‧‧‧基板支撐件
128‧‧‧功率源
130‧‧‧氣源
131‧‧‧波紋管組件
132‧‧‧遮盤組件機構
133‧‧‧舉升銷組件
134‧‧‧葉片
135‧‧‧第二舉升機構
136‧‧‧致動器
138‧‧‧軸
140‧‧‧遮盤組件
202‧‧‧尖端
204‧‧‧細長底座
206‧‧‧第一特徵結構
208‧‧‧第二特徵結構
209‧‧‧舉升銷
302‧‧‧銷
304‧‧‧護套
306‧‧‧第一支撐表面
308‧‧‧第二支撐表面
309‧‧‧舉升銷
310‧‧‧環形溝槽
402‧‧‧銷
404‧‧‧護套
406‧‧‧套環
408‧‧‧彈簧
409‧‧‧舉升銷
412‧‧‧聚合物尖端
414‧‧‧上支撐表面
502‧‧‧銷
504‧‧‧護套
506‧‧‧鎖定機構
508‧‧‧致動器
509‧‧‧舉升銷
510‧‧‧第一支撐表面
512‧‧‧第二支撐表面
514‧‧‧彈簧
516‧‧‧第一凸輪
518‧‧‧第二凸輪
520‧‧‧突出物
本揭露書的實施例(於上所簡單地摘要且於下詳細討論)可參照描繪於隨附的圖式中之本揭露書的示例性實施例而理解。然而,附隨的圖式僅示例本揭露書的典型實施例且因此不被視為限制範圍,因為本揭露書可採用其他等效的實施例。
第1圖描繪適合與依據本揭露書之一些實施例的舉升銷組件一起使用的處理腔室。
第2圖描繪依據本揭露書之一些實施例的舉升銷組件。
第3A-B圖描繪依據本揭露書之一些實施例的舉升銷組件。
第4A-B圖描繪依據本揭露書之一些實施例的舉升銷組件。
第5A-B圖描繪依據本揭露書之一些實施例的舉升銷組件。
第6圖描繪依據本揭露書之一些實施例的第5A-B圖之舉升銷組件的截面剖視圖。
為幫助瞭解,盡可能使用相同的元件符號以指定共用於圖式之相同元件。圖式並未依據尺寸而繪製且可為清晰而簡化。一個實施例的元件及特徵可有利地併入其他實施例中而不需進一步引用。
於此提供舉升銷組件的實施例。舉升銷組件可有利地減少在基板之背側上的顆粒生成,同時保持當遮盤存在時支撐遮盤的能力。發明的舉升銷組件的實施例可有利地被輕易地翻新至現存的處理系統,藉此避免對現存系統不必要且高昂的修改。儘管可用於許多基板處理設備,於下所揭露之設備係以與物理氣相沉積(PVD)處理腔室有關的方式做示例性地說明。
第1圖為與本揭露書之一些實施例一起使用的示例性處理腔室100的概要圖。在一些實施例中,處理腔室100可為結合以形成多腔室處理系統(如,叢集工具)之複數個腔室之一者。替代地,處理腔室100可為獨立的處理腔室。在一些實施例中,處理腔室100可為沉積腔室,例如,PVD腔室。替代地,處理腔室100可為任何合適的處理腔室,其中可使用遮盤組件以保護基板支撐件於腔室/靶材清潔或調節處理期間免於損害。
處理腔室100包含腔室本體102和蓋組件104,腔室本體102和蓋組件104界定可抽空的處理容積106。腔室本體102大體包含一或多個側壁108及底部110。一或多個側壁108可為單一圓形側壁或在處理腔室中具有非圓形配置的複數個側壁。側壁大體包含遮盤組件埠112。遮盤組件埠112經配置以當遮盤組件140在撤回位置中時,允許遮盤組件140的至少一部分通過遮盤組件埠112。外殼116大體覆蓋遮盤組件埠112,以維持在處理容積106內之真空的完整性。額外的埠可設置於側壁中,諸如可密封存取埠,用以提供基板114從處理腔室100的進出。泵送埠可設置於腔室本體102之側壁及/或底部中,且係耦接至抽空並控制在處理容積106內之壓力的泵送系統。在其他實施例中,位在處理腔室100之外側的遮件庫(shutter garage)(圖未示)可於當遮盤組件140未使用時儲存遮盤組件140,且遮盤組件140可通過在處理腔室100中之開口(圖未示)而移入處理腔室100。
腔室本體102之蓋組件104大體支撐環形屏蔽件118,環形屏蔽件118支撐陰影環120。陰影環120大體經配置以限制沉積至通過陰影環120之中央而曝露之基板114之一部分。蓋組件104大體包括靶材122及磁控管124。
靶材122提供於沉積處理期間在基板114上沉積的材料,同時磁控管124強化於處理期間之靶材材料的均勻損耗。靶材122及基板支撐件126係藉由功率源128相對彼此而偏壓。惰性氣體(例如,氬)經由氣源130而被供應至處理容積106。電漿係由氣體而形成於基板114和靶材122間。在電漿內的離子被加速朝向靶材122並使得材料變得從靶材122移出。移出的靶材材料被吸引朝向基板114並於基板114上沉積材料膜。
基板支撐件126係大體設置於腔室本體102之底部110上並於處理期間支撐基板114。舉升銷組件133可包含安裝於平台117上之複數個舉升銷109,平台117係連接至軸111,軸111係耦接至用以升高及降低舉升銷組件133之第二舉升機構135,使得基板114或遮盤可被放置於基板支撐件126上或從基板支撐件126移除。基板支撐件126包含通道121(如,穿孔),以接收舉升銷109。波紋管組件131係耦接於平台117和底部110間,以提供可撓的密封,可撓的密封於舉升銷組件133的垂直移動期間維持腔室的真空。
遮盤組件機構132大體設置鄰近於基板支撐件126。遮盤組件機構132大體包含葉片134及致動器136,葉片134支撐遮盤組件140,且致動器 136係藉由軸138而耦接至葉片134,以控制葉片134的位置。
葉片134可在第1圖中所示的收回或清潔位置及第二位置間移動,第二位置置放遮盤組件140使其與基板支撐件126實質同心。在第二位置中,遮盤組件140可於(在PVD腔室中的)靶材預燒及(在基板預清潔腔室中的)腔室黏貼處理期間(藉由使用舉升銷)被傳送至基板支撐件126。葉片134在靶材預燒及腔室黏貼處理之後被回送至收回位置。致動器136可為適於通過一角度而旋轉軸138的任何裝置,該角度為移動葉片134於清潔位置及第二位置間之角度。在與本揭露書一致的其他實施例中,置放用以處理之基板114的機械人機構亦可被使用,以將遮盤組件140移動至定位以保護基板支撐件126。
第2圖描繪依據本揭露書之一些實施例的舉升銷209之上部的概要圖。舉升銷209包含細長底座204,細長底座204在遠端具有第一特徵結構206。第一特徵結構206與尖端202接合並維持尖端202,尖端202用以支撐基板或遮盤於尖端202上。尖端202包含經調整尺寸和形狀以藉由第一特徵結構206所保持的第二特徵結構208。在一些實施例中,第一特徵結構206可為夾頭(collet)且第二特徵結構為待嵌入至夾頭並藉由夾頭所嚙合之錐形表面,以將尖端202耦接至細長底座204。在其他實施 例中,尖端202之第二特徵結構可被螺入以嚙合在第一特徵結構206中的螺紋。為了減少在基板之背側上之顆粒產生,尖端202係由導電聚合物(例如,CELAZOLE®,可抵抗溫度高達約400℃)所形成。細長底座204係由金屬(例如,不銹鋼)所形成。此聚合物有利地防止顆粒產生在基板之背側上,同時維持支撐熱且重的遮盤之能力。
第3A及3B圖描繪依據本揭露書之一些實施例的舉升銷309之上部的概要圖。舉升銷309包含延伸穿過護套304的銷302。銷302係由第一材料所形成且護套304係由與第一材料不同之第二材料所形成。在一些實施例中,第一材料為導電聚合物而第二材料係金屬的。銷302提供第一支撐表面306,第一支撐表面306用以將基板支撐於第一支撐表面306上。護套304提供第二支撐表面308,第二支撐表面308用以將遮盤支撐於第二支撐表面308上。銷302延伸越過第二支撐表面308,使得第一和第二支撐表面306、308係偏離的。如第3A圖中所示,遮盤包含凹陷(諸如環型溝槽310),以有利地將遮盤置中於舉升銷組件133上。環形溝槽310經調整尺寸和形狀,使得當遮盤被放置於舉升銷組件之上時,銷302延伸進入環形溝槽310並與遮盤相隔距離D1。在一些實施例中,D1可為至少0.01英寸。因此,遮盤放置於護套304的第二支撐表面308上。如第3B 圖中所示,當基板被放置於舉升銷組件133上時,基板放置於銷302的第一支撐表面306上。因為銷302延伸越過護套304,基板從未接觸護套304,藉此避免在基板的背側上之顆粒產生。在一些實施例中,第一支撐表面306可為圓形,以減少銷302和基板間的接觸面積。
第4A及4B圖描繪依據本揭露書之一些實施例的舉升銷409之上部的概要圖。舉升銷409包含延伸穿過護套404的銷402。銷402係由第一材料所形成且護套404係由第二材料所形成。在一些實施例中,第一材料為導電聚合物而第二材料係金屬的。在其他實施例中,第一和第二材料皆為金屬的(如,不銹鋼)。銷402包含套環406,彈簧408設置於套環406下方。彈簧408延伸於套環406和平台117間。當基板被放置於舉升銷409上時,彈簧408係為未壓縮狀態中。當遮盤被放置於舉升銷409上時,彈簧408係為壓縮狀態中。彈簧408經選擇使得彈簧常數足以支撐基板的重量並保持未壓縮。所需的特定彈簧常數可藉由基板及遮盤各自的重量及支撐基板和遮盤之銷的數量(如,三個或更多個)而決定。當遮盤被放置於銷402上時,遮盤的重量壓縮彈簧408使得遮盤放置於護套404的上支撐表面414上。聚合物尖端412係設置於銷402上。若銷402係金屬的,聚合 物尖端412有利地防止在基板的背側上之顆粒產生。在一些實施例中,聚合物尖端412可能為球。
第5A及5B圖描繪依據本揭露書之一些實施例的舉升銷509之上部的概要圖。舉升銷509包含延伸穿過護套504的銷502。銷502係由第一材料所形成且護套504係由與第一材料不同之第二材料所形成。在一些實施例中,第一材料為導電聚合物而第二材料係金屬的。舉升銷509亦包含鎖定機構506,鎖定機構506移動銷502至上升(第5B圖)或下降(第5A圖)位置。鎖定機構506包含致動器508及彈簧514,致動器508具有延伸穿過平台117之下面部分,且彈簧514偏壓鎖定機構506朝向平台117。為了移動銷502至兩個位置之任一者,舉升銷組件133係降低,直到致動器508壓抵處理腔室100的底部110,並接著舉升離開底部110。致動器508具有長度D2,D2係夠長以當舉升銷組件133被降低時接觸處理腔室100的底部110,藉此降低致動器508。因此,銷502被朝上推動並接著被降低至置放位置(上升或下降位置)。為移動銷502至其他位置,舉升銷組件133再次被降低直到致動器508被壓抵處理腔室100的底部110,並接著舉升離開底部110。當基板將被放置於舉升銷509上時,鎖定機構506被致動以移動銷502至上升位置,使得基板放置於銷502的第一支撐表面510上(第5B圖)。當遮盤 將被放置於舉升銷509上時,鎖定機構506被致動以移動銷502至下降位置,使得遮盤放置於護套504的第二支撐表面512上。
如第6圖中所示,鎖定機構506包含在銷之下端處的第一凸輪516,第一凸輪516與在致動器508之上端處的第二凸輪518嚙合。第一凸輪516具有第一輪廓,且第二凸輪518具有第二輪廓。圍繞第一凸輪516之護套504的內表面包含由複數個通道所隔開之複數個突出物520。在放置位置中(顯示於第6圖中),第一凸輪516放置於複數個突出物520上或延伸進入複數個通道。當舉升銷組件133被降低且致動器508被推上時,第二凸輪518係壓抵第一凸輪516,藉此推動銷502向上。第二凸輪518的第二輪廓經配置以當第二凸輪518嚙合第一凸輪516時旋轉第一凸輪516(及銷502)。當舉升銷組件133被升高時,彈簧514迫使銷502回到放置位置,於放置位置中第一凸輪516不是置放抵住複數個突出物520,就是延伸穿過在複數個突出物520之間的通道。銷502的旋轉幫助在銷502的上升位置和下降位置間切換,因為銷不是置放於複數個突出物520上,就是延伸穿過在複數個突出物520之間的通道。
雖然前面部分係關於本揭露書的實施例,本揭露書的其他及進一步的實施例可經設計而不背離本揭露書的基本範圍。
202‧‧‧尖端
204‧‧‧細長底座
206‧‧‧第一特徵結構
208‧‧‧第二特徵結構
209‧‧‧舉升銷
302‧‧‧銷
304‧‧‧護套
306‧‧‧第一支撐表面
308‧‧‧第二支撐表面
309‧‧‧舉升銷
310‧‧‧圓形溝槽

Claims (20)

  1. 一種舉升銷組件,包括:一平台;一細長底座,從該平台延伸,且由一第一材料所形成,並具有一第一特徵結構形成在該底座之一遠端中,以接合一尖端且可移除地支撐該尖端;及一尖端,由不同於該第一材料之一第二材料所形成,並具有在該尖端之一第一側及該尖端之一相對第二側上的一支撐表面,其中該相對第二側包含一第二特徵結構,以匹配該底座之該第一特徵結構,以可移除地將該將尖端保持於該底座之該遠端上。
  2. 如請求項1所述之舉升銷組件,其中該第一材料係不銹鋼。
  3. 如請求項1所述之舉升銷組件,其中該第二材料係一導電聚合物。
  4. 如請求項1至3任一項所述之舉升銷組件,其中該第一特徵結構為一夾頭且該第二特徵結構具有待嵌入至該夾頭並與該夾頭嚙合的一錐形表面。
  5. 一種舉升銷組件,包括:一平台;及一舉升銷,從該平台延伸並包括一第一材料及一第二材料,該第一材料提供一第一支撐表面且該第二 材料提供一第二支撐表面,其中該第一材料與該第二材料不同,其中該第一材料係一導電聚合物,且其中該第二材料係金屬的。
  6. 如請求項5所述之舉升銷組件,其中該舉升銷包含一護套和延伸經過該護套之一銷。
  7. 如請求項6所述之舉升銷組件,其中該銷係由該第一材料所形成,且該護套係由該第二材料所形成。
  8. 如請求項7所述之舉升銷組件,其中該第二材料為不銹鋼。
  9. 如請求項7所述之舉升銷組件,其中該第一支撐表面為該銷之一上表面,且該第二支撐表面為該護套之一上表面,且其中該第一支撐表面係位於該第二支撐表面的上方。
  10. 如請求項5至9任一項所述之舉升銷組件,其中該第一支撐表面係圓形的。
  11. 如請求項6至9任一項所述之舉升銷組件,其中該銷係在一第一位置和一第二位置間可移動,該舉升銷組件進一步包括:一彈簧,支撐該銷之一套環且可在該第一位置中的一未壓縮狀態及在該第二位置中的一壓縮狀態間可移動,其中該彈簧具有一彈簧常數,使得當一基 板係設置於該舉升銷組件上時,該銷係位於該第一位置中,且當一遮盤係設置於該舉升銷組件上時,該銷係位於該第二位置中。
  12. 如請求項11所述之舉升銷組件,進一步包括:一聚合物尖端,設置在該銷之一上表面上,其中該第一支撐表面係該聚合物尖端的一上表面且該第二支撐表面係該護套之一上表面。
  13. 如請求項12所述之舉升銷組件,其中在該第一位置中,該第一支撐表面係位於該第二支撐表面之上方,且在該第二位置中,該第一表面係與該第二表面齊平或位於在該第二表面之下方。
  14. 如請求項6至9任一項所述之舉升銷組件,進一步包括:一鎖定機構,在一第一位置和一第二位置間可移動,其中在該第一位置中,該第一支撐表面係位於該第二支撐表面之下方,使得當存在一遮盤時,該遮盤放置於該第二支撐表面上,且其中在該第二位置中,該第一支撐表面係位於該第二支撐表面之上方,使得當存在一基板時,該基板放置於該第一支撐表面上。
  15. 如請求項14所述之舉升銷組件,其中 該鎖定機構包括:一第一凸輪,位於該銷的一下端處,該第一凸輪具有一第一輪廓;一致動器,包含一下面部分和一上面部分,該下面部分延伸穿過該平台且該上面部分包含具有一第二輪廓的一第二凸輪;及複數個突出物,設置於該護套之一內表面上,且藉由複數個通道隔開。
  16. 如請求項15所述之舉升銷組件,其中該銷在該第二位置中放置於該複數個突出物上,且在該第一位置中延伸進入該複數個通道。
  17. 如請求項16所述之舉升銷組件,其中當該舉升銷組件被降低時,該致動器藉由一處理腔室的一底部而降低。
  18. 如請求項17所述之舉升銷組件,其中該第一和第二輪廓經配置使得當該致動器被降低時,該第二凸輪係壓抵該第一凸輪,且該銷被舉升及旋轉,以將該銷從該複數個通道移動至該複數個突出物,或從該複數個突出物移動至該複數個通道。
  19. 如請求項14所述之舉升銷組件,進一步包括: 一聚合物尖端,設置於該銷之一上表面上。
  20. 一種基板處理腔室,包括:一腔室本體,界定一內容積;一基板支撐件,設置於該內容積中,該基板支撐件包含複數個通道,該複數個通道從該基板支撐件的一下表面延伸至該基板支撐件的一上表面;及複數個舉升銷,用以延伸穿過該複數個通道,以當一基板或一遮盤存在時,支撐該基板或該遮盤,其中每一舉升銷係如請求項1至3或5至9任一項中所述。
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