CN109369168A - 铁氧体组合物和电子部件 - Google Patents
铁氧体组合物和电子部件 Download PDFInfo
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- CN109369168A CN109369168A CN201811382090.XA CN201811382090A CN109369168A CN 109369168 A CN109369168 A CN 109369168A CN 201811382090 A CN201811382090 A CN 201811382090A CN 109369168 A CN109369168 A CN 109369168A
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- oxide
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- ferrite
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- ferrite composition
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- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 58
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 31
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004615 ingredient Substances 0.000 claims abstract description 15
- 239000011787 zinc oxide Substances 0.000 claims abstract description 15
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims abstract description 13
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000428 cobalt oxide Inorganic materials 0.000 claims abstract description 12
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 11
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 11
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 8
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000005751 Copper oxide Substances 0.000 claims abstract description 6
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 description 21
- 239000002994 raw material Substances 0.000 description 14
- 230000007423 decrease Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000009766 low-temperature sintering Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000011162 core material Substances 0.000 description 6
- 230000004523 agglutinating effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 150000003891 oxalate salts Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
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Abstract
一种铁氧体组合物,其特征在于,主成分由以Fe2O3换算为40.0~49.8摩尔%的氧化铁、以CuO换算为5.0~14.0摩尔%的氧化铜、以ZnO换算为0~32.0摩尔%的氧化锌、余量为氧化镍所构成,相对于所述主成分100重量%,含有以SnO2换算为0.5~4.0重量%的氧化锡、以Bi2O3换算为0.10~1.00重量%的氧化铋、以Co3O4换算为0.21~3.00重量%的氧化钴作为副成分。
Description
(本申请是申请日为2014年10月16日、申请号为201410550429.8、发明名称为“铁氧体组合物和电子部件”的专利申请的分案申请。)
技术领域
本发明涉及适合于层叠型电感器等的制造的铁氧体组合物、以及具有由该组合物构成的铁氧体烧结体的电子部件。
背景技术
一般而言,电感元件如果小型化则损耗容易增加,Q值下降。因此,要求即使小型化也能够得到高Q值的磁芯材料及使用该磁芯材料的电感元件。
此外,在层叠型电感器中,要求线圈导体与铁氧体层一体烧成。因此,层叠型电感器用的铁氧体组合物要求烧结温度在线圈导体的熔点以下。
在专利文献1中,公开了在NiCuZn系铁氧体中添加SnO2、Mn3O4的磁性材料。专利文献1所记载的发明涉及使用可以低温烧结且即使在应力下特性变动在宽的温度范围内也小的低损耗铁氧体来构成电感器的电器部件等。
可是,近年来智能手机等便携设备的高性能化的进展显著。最近,NFC(Near fieldcommunication:近场通信)或者非接触供电等的采用不断发展,流过与以往相比大的交流电流的电路正在增加。另外,由于应对电子部件的高密度化部件,小型化的要求依然很强。
由于这样的状况,因此要求交流电流值增加或者即使小型化也能够得到高Q值的磁芯材料及使用该磁芯材料的电感元件。
现有技术文献
专利文献
专利文献1:日本特开平2011-018913号公报
发明内容
发明所要解决的技术问题
本发明有鉴于这样的实际状况,其目的在于提供可以低温烧结且在高磁场下、大振幅电流下Q值也高的铁氧体组合物、以及可以小型化的电子部件。
解决技术问题的手段
为了达到上述目的,本发明所涉及的铁氧体组合物,其特征在于:主成分由以Fe2O3换算为40.0~49.8摩尔%的氧化铁、以CuO换算为5.0~14.0摩尔%的氧化铜、以ZnO换算为0~32.0摩尔%的氧化锌、余量为氧化镍所构成,相对于所述主成分100重量%,含有以SnO2换算为0.5~4.0重量%的氧化锡、以Bi2O3换算为0.10~1.00重量%的氧化铋、以Co3O4换算为0.21~3.00重量%的氧化钴作为副成分。
本发明所涉及的电子部件具有由上述铁氧体组合物所构成的铁氧体烧结体。
本发明所涉及的铁氧体组合物通过使构成主成分的氧化物的含量为上述范围,进一步在上述范围内含有氧化锡、氧化铋和氧化钴作为副成分,从而低温烧结变得可能,且在高磁场下、大振幅电流下Q值也会高。例如,在可以作为内部电极来使用的Ag的熔点以下的900℃左右下对铁氧体组合物进行烧结变得可能。另外,由本发明所涉及的铁氧体组合物构成的铁氧体烧结体,其Q值与现有产品相比较更大。
此外,由本发明所涉及的铁氧体组合物构成铁氧体烧结体即使是在比现有更高的磁场下也能够提高Q值。即,例如即使在与现有的外部磁场(1~2A/m)相比更高的外部磁场(数十~数百A/m)下,也能够维持足够高的Q值。因此,本发明所涉及的电子部件与具有由现有的铁氧体组合物构成的铁氧体烧结体的电子部件相比较,即使对于大的振幅信号也能够应对。
另外,进一步地,由本发明所涉及的铁氧体组合物构成的铁氧体烧结体即使施加比现有更高的交流电流,也是低损耗,具有高的Q值。因此,通过使用本发明所涉及的铁氧体组合物从而铁氧体层的薄层化变得可能,电子部件的小型化变得可能。
得到这样的效果的理由被认为是通过使主成分为规定范围而且进一步使各个成分的含量为特定的范围而得到的复合效果。
再有,由本发明所涉及的铁氧体组合物构成的铁氧体烧结体适合于层叠型电感器、层叠型L-C滤波器、层叠型共模滤波器、利用其他层叠方法的复合电子部件等。例如对于LC复合电子部件和NFC线圈也适宜使用。特别是在μ为80以下的情况下,可以适用于例如在高频带中使用的NFC线圈(例如13.56MHz)、高频用层叠功率电感器(例如20~200MHz)、或者层叠型磁珠(beads)等用途。另外,在μ超过80的情况下,可以适用于层叠型功率电感器(例如1~20MHz)、小型的信号类电感器等用途。
由本发明所涉及的铁氧体组合物构成的铁氧体烧结体在数十~数百A/m的外部磁场下Q值大。由于由该铁氧体组合物构成的铁氧体烧结体即使在高电流下Q值也大,因此,能够谋求电子部件的小型化。此外,对于大的振幅的信号也可以应对。
附图说明
图1是本发明的一个实施方式所涉及的层叠型电感器的截面图。
图2是本发明的一个实施方式所涉及的LC复合电子部件的截面图。
图3是表示外部磁场H=100A/m的各个试样的μ与Q的关系的图表。
图4是表示外部磁场H=200A/m的各个试样的μ与Q的关系的图表。
图5是表示使外部磁场H变化的情况下的各个试样的Q的变化的图表。
符号的说明:
1…层叠型电感器
2…元件
3…端子电极
4…层叠体
5…线圈导体
5a、5b…引出电极
10…LC复合电子部件
12…电感器部
14…电容器部
具体实施方式
以下,基于附图所示的实施方式来说明本发明。
如图1所示,本发明的一个实施方式所涉及的层叠型电感器1具有元件2以及端子电极3。元件2通过将经由铁氧体层4而三维且螺旋状地形成有线圈导体5的坯料的层叠体烧成而得到。铁氧体层4由本发明的一个实施方式所涉及的铁氧体组合物构成。通过在元件2的两端形成端子电极3,经由引出电极5a,5b而与端子电极3连接,从而得到层叠型电感器1。对于元件2的形状没有特别限制,通常为长方体状。另外,对于其尺寸也没有特别限制,只要是根据用途做成适当的尺寸即可。
作为线圈导体5和引出电极5a,5b的材质,没有特别限定,例如可以使用Ag、Cu、Au、Al、Pd、Pd/Ag合金等。再有,也可以添加Ti化合物、Zr化合物、Si化合物等。
本实施方式所涉及的铁氧体组合物是Ni-Cu系铁氧体或者Ni-Cu-Zn系铁氧体,作为主成分,含有氧化铁、氧化铜和氧化镍,还可以进一步含有氧化锌。
在主成分100摩尔%中,氧化铁的含量以Fe2O3换算为40.0~49.8摩尔%,优选为42.0~49.0摩尔%,更优选为43.0~49.0摩尔%。如果氧化铁的含量过多或者过少,则会有Q值下降的倾向。如果过多,则会有烧结性劣化,特别是低温烧结时的烧结密度会下降的倾向。
在主成分100摩尔%中,氧化铜的含量以CuO换算为5.0~14.0摩尔%。如果氧化铜的含量过少,则会有烧结性劣化,特别是低温烧结时的烧结密度下降的倾向。如果过多,则会有Q值下降的倾向。
在主成分100摩尔%中,氧化锌的含量以ZnO换算为0~32.0摩尔%。即,既可以含有氧化锌作为主成分也可以不含有氧化锌。在含有氧化锌作为主成分的情况下,优选为0.5~30.0摩尔%,更优选为0.5~26.0摩尔%。如果氧化锌的含量过多,则会有居里温度下降的倾向。
主成分的余量由氧化镍构成。
本实施方式所涉及的铁氧体组合物除了上述的主成分之外,还含有氧化锡、氧化铋和氧化钴作为副成分。
氧化锡的含量相对于主成分100重量%以SnO2换算为0.5~4.0重量%,优选为0.5~2.5重量%。如果氧化锡的含量过少,则会有Q值下降的倾向。如果过多,则会有烧结性劣化,特别是低温烧结时的烧结密度下降的倾向。
氧化铋的含量相对于主成分100重量%以Bi2O3换算为0.10~1.00重量%,优选为0.20~0.70重量%,更优选为0.20~0.50重量%。如果氧化铋的含量过少,则会有烧结性劣化,特别是低温烧结时的烧结密度下降的倾向。如果过多,则会有Q值下降的倾向。
氧化钴的含量相对于主成分100重量%以Co3O4换算为0.21~3.00重量%,优选为0.23~2.00重量%。如果氧化钴的含量过少,则会有Q值下降的倾向。如果过多,则会有烧结性劣化,特别是低温烧结时的烧结密度下降的倾向。
在本实施方式所涉及的铁氧体组合物中,除了将主成分的组成范围控制在上述范围内之外,还可以全部含有上述的氧化锡、氧化铋和氧化钴作为副成分。其结果,能够使烧结温度下降,可以使用例如Ag等熔点比较低的金属作为一体烧成的内部导体。此外,低温下烧结后的铁氧体烧结体维持其Q值高的状态。
再有,在不含有氧化锡、氧化铋和氧化钴当中任意一种以上的情况下,不能够充分得到上述效果。即,上述效果被认为是在同时含有特定量的氧化锡、氧化铋和氧化钴的情况下才能够得到的复合效果。
另外,本实施方式所涉及的铁氧体组合物与上述副成分不同可以在不阻碍本发明效果的范围下进一步含有Mn3O4等锰氧化物、氧化锆、玻璃化合物等附加成分。这些附加成分的含量并没有特别限定,例如可以为0.05~1.0重量%左右。
此外,在本实施方式所涉及的铁氧体组合物中,可以含有不可避免的杂质元素的氧化物。
具体而言,作为不可避免的杂质元素,可以列举C、S、Si、Cl、As、Se、Br、Te、I、或者Li、Na、Mg、Al、Ca、Ga、Ge、Sr、Cd、In、Sb、Ba、Pb等典型金属元素、或者Sc、Ti、V、Cr、Y、Nb、Mo、Pd、Ag、Hf、Ta等过渡金属元素。另外,不可避免的杂质元素的氧化物在铁氧体组合物中可以含有0.05重量%以下左右。
本实施方式所涉及的铁氧体组合物具有铁氧体颗粒、以及存在于相邻的结晶颗粒之间的结晶晶界。结晶颗粒的平均结晶粒径优选为0.2~1.5μm。
接着,说明本实施方式所涉及的铁氧体组合物的制造方法的一个例子。首先,将初始原料(主成分的原料和副成分的原料)以成为规定的组成比的方式秤量并混合,得到原料混合物。作为混合方法,可以列举例如使用球磨机来进行的湿式混合或使用干式混合机来进行的干式混合。再有,优选使用平均粒径为0.05~1.0μm的初始原料。
作为主成分的原料,可以使用氧化铁(α-Fe2O3)、氧化铜(CuO)、氧化镍(NiO),根据需要还可以使用氧化锌(ZnO)、或者复合氧化物等。此外,除此之外还可以使用通过烧成而成为上述氧化物或复合氧化物的各种化合物等。作为通过烧成而成为上述氧化物的物质,可以列举例如金属单质、碳酸盐、草酸盐、硝酸盐、氢氧化物、氯化物、有机金属化合物等。
作为副成分的原料,可以使用氧化锡、氧化铋和氧化钴。关于成为副成分的原料的氧化物没有特别限定,可以使用复合氧化物等。此外,除此之外还可以使用通过烧成而成为上述氧化物或复合氧化物的各种化合物等。作为通过烧成而成为上述氧化物的物质,可以列举例如金属单质、碳酸盐、草酸盐、硝酸盐、氢氧化物、氯化物、有机金属化合物等。
再有,氧化钴的一个形态即Co3O4由于其保管或处理容易,其价数即使在空气中也稳定,因此优选作为氧化钴的原料。
接着,进行原料混合物的预烧,得到预烧材料。预烧是为了唤起原料的热分解、成分的均质化、铁氧体的生成、由烧结引起的超微粒的消失和往适度的颗粒尺寸的晶粒生长而将原料混合物变换成适于后工序的形态而进行的。这样的预烧优选在650~750℃的温度下,通常进行2~15小时左右。预烧通常是在大气(空气)中进行,但是也可以在氧分压比大气中低的氛围气体中进行。再有,主成分的原料与副成分的原料的混合可以在预烧之前进行,也可以在预烧之后进行。
接着,进行预烧材料的粉碎,得到粉碎材料。粉碎是为了瓦解预烧材料的凝聚而做成具有适度烧结性的粉体而进行的。在形成预烧材料大的块时,进行粗粉碎之后使用球磨机或者超微粉碎机等来进行湿式粉碎。湿式粉碎进行至粉碎材料的平均粒径优选为0.1~1.0μm左右为止。
使用所得到的粉碎材料来制造本实施方式所涉及的层叠型电感器。关于制造该层叠型电感器的方法没有限制,以下,使用薄片法。
首先,将所得到的粉碎材料与溶剂或粘合剂等添加剂一起浆料化,制作膏体。然后,使用该膏体形成坯料薄片。接着,将所形成的坯料薄片加工成规定形状,经脱粘合剂工序、烧成工序,得到本实施方式所涉及的层叠型电感器。烧成在线圈导体5和引出电极5a,5b的熔点以下的温度下进行。例如,在线圈导体5和引出电极5a,5b为Ag(熔点962℃)的情况下,优选在850~920℃的温度下进行。烧成时间通常为1~5小时左右。另外,烧成可以在大气(空气)中进行,也可以在氧分压比大气中低的氛围气体中进行。这样所得到的层叠型电感器由本实施方式所涉及的铁氧体组合物构成。
以上,就本发明的实施方式进行了说明,但是本发明丝毫不限定于这样的实施方式,不言而喻,在不脱离本发明的宗旨的范围内可以以各种各样的形态来实施。例如,作为图2所示的LC复合电子部件10中的铁氧体层4,也可以使用本发明的铁氧体组合物。再有,在图2中符号12所示的部分是电感器部,符号14所示的部分是电容器部。
实施例
以下,基于更详细的实施例来说明本发明,但是本发明不限定于这些实施例。
实施例1
首先,作为主成分的原料,准备Fe2O3、NiO、CuO,然后在含有氧化锌的情况下准备ZnO。作为副成分的原料,准备SnO2、Bi2O3、Co3O4。
接着,在将准备好的主成分和副成分的原料粉末以成为作为烧结体的表1和表2所记载的组成的方式称量之后,用球磨机湿式混合16小时,得到原料混合物。
接着,在对所得到的原料混合物干燥之后,在空气中在720℃下预烧4小时而成为预烧粉末。用钢铁制球磨机来对预烧粉末实施16小时的湿式粉碎,得到粉碎粉。
接着,在干燥该粉碎粉之后,对粉碎粉100重量%添加10.0重量%的作为粘合剂的6wt%浓度的聚乙烯醇水溶液并进行造粒,成为颗粒。对该颗粒加压成形,以成为成形密度3.20Mg/m3的方式得到环形形状(尺寸=外径13mm×内径6mm×高3mm)的成形体。
接着,将这些各个成形体在空气中在Ag熔点(962℃)以下的900℃下进行2小时烧成,得到作为烧结体的环形芯试样。此外,对试样进行以下的特性评价。
烧结密度
就所得到的环形磁芯试样,由烧成后的烧结体的尺寸和重量算出烧结密度。在本实施例中,以烧结密度5.0Mg/m3以上为良好。另外,关于烧结密度不满5.0Mg/m3的试样,判断为不值得进行其他特性评价,并省略以下的特性评价。
居里温度
居里温度的测定基于JIS-C-2560-1来进行。在本实施例中,以居里温度是否为125℃以上来评价。关于居里温度未满125℃的试样,出于在电感器的使用温度中会有不便的理由,判断为不值得进行其他特性评价,并省略以下的特性评价。
磁导率μ、Q值
对于烧结密度和居里温度良好的试样,将铜线导线在初级侧卷绕20匝并且在次级侧卷绕7匝,使用B-H分析仪(岩通计测株式会社B-HANALYZER SY-8218)和放大器(株式会社NF回路设计集团HIGHSPEED BIPORLAR AMPLIFIER HSA 4101-IW)来测定磁导率μ和Q值。作为测定条件,施加测定频率1MHz、测定温度25℃、外部磁场100A/m、200A/m。
在本实施方式中,优选在外部磁场为100A/m下Q值为110以上。此外,优选在外部磁场为200A/m下Q值为55以上。将以上的结果表示在表1(实施例)、表2(比较例)。另外,居里温度一栏为○的试样其居里温度为125℃以上,为×的试样其居里温度未满125℃。
从表1和表2能够确认,在含有副成分即SnO2、Bi2O3和Co3O4三种且主成分和副成分的含量为本发明的范围内的情况下(试样号1~30),Q值为良好。相对于此,在主成分和副成分的任意一种为本发明的范围外的情况(试样号31~55)下,得到烧结密度、居里温度、Q值当中的任意1个以上偏离良好范围的烧结体。
此外,将表1和表2的结果与外部磁场另外图表化的是图3(H=100A/m)和图4(H=200A/m)。从图3和图4明确,在比较μ接近的实施例与比较例的情况下,与比较例相比实施例的Q值变得更高。
实施例2
关于表1的试样号11和表2的试样号31、32、33,将在H=100A/m、200A/m以外的外部磁场(H=20~400A/m)下测定Q值的结果汇总于图5。外部磁场以外与实施例1同样地测定。再有,试样号31对应于现有型的无添加材料,试样号32对应于现有型的添加有Co材料,试样号33对应于现有型的添加有SnBi材料。另外,在现有型的无添加材料和添加有Co材料中,在H=350、400A/m下Q值不能测定。
从图5可知,本发明所涉及的添加有SnCoBi材料在20~400A/m的高磁场下与现有型的无添加材料、添加有Co材料、添加有SnBi材料相比较能够将Q值维持得较高。
综上所述,本发明所涉及的铁氧体材料在Ag熔点(962℃)以下的低温烧结是可能的。此外,低温烧结本发明所涉及的铁氧体材料而得到的烧结体即使在大电流条件下也具有高特性。因此,通过使用本发明所涉及的铁氧体材料,从而电子部件的小型化是可能的,此外,能够得到即使相对于大振幅信号也是有效的电子部件。
Claims (2)
1.一种铁氧体组合物,其中,
主成分由以Fe2O3换算为40.0~49.8摩尔%的氧化铁、以CuO换算为5.0~14.0摩尔%的氧化铜、以ZnO换算为0~32.0摩尔%的氧化锌、以及余量的氧化镍所构成,
相对于所述主成分100重量%,含有以SnO2换算为0.5~4.0重量%的氧化锡、以Bi2O3换算为0.10~1.00重量%的氧化铋、以Co3O4换算为0.21~3.00重量%的氧化钴作为副成分,
并且所述铁氧体组合物含有不可避免的杂质元素的氧化物,
所述不可避免的杂质元素为C、S、Si、Cl、As、Se、Br、Te、I、或者Li、Na、Mg、Al、Ca、Ga、Ge、Sr、Cd、In、Sb、Ba、Pb等典型金属元素、或者Sc、Ti、V、Cr、Y、Nb、Mo、Pd、Ag、Hf、Ta等过渡金属元素,
所述铁氧体组合物具有铁氧体颗粒、以及存在于相邻的结晶颗粒之间的结晶晶界,所述结晶颗粒的平均结晶粒径为0.2~1.5μm。
2.一种电子部件,其中,
具有由权利要求1所述的铁氧体组合物所构成的铁氧体烧结体。
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