CN109346405A - 一种GaN基SBD倒装芯片的制备方法 - Google Patents
一种GaN基SBD倒装芯片的制备方法 Download PDFInfo
- Publication number
- CN109346405A CN109346405A CN201811408375.6A CN201811408375A CN109346405A CN 109346405 A CN109346405 A CN 109346405A CN 201811408375 A CN201811408375 A CN 201811408375A CN 109346405 A CN109346405 A CN 109346405A
- Authority
- CN
- China
- Prior art keywords
- layer
- flip
- electrode
- chip
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 23
- 239000010980 sapphire Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000003801 milling Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910005171 Si3O4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811408375.6A CN109346405B (zh) | 2018-11-23 | 2018-11-23 | 一种GaN基SBD倒装芯片的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811408375.6A CN109346405B (zh) | 2018-11-23 | 2018-11-23 | 一种GaN基SBD倒装芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109346405A true CN109346405A (zh) | 2019-02-15 |
CN109346405B CN109346405B (zh) | 2021-12-03 |
Family
ID=65317782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811408375.6A Active CN109346405B (zh) | 2018-11-23 | 2018-11-23 | 一种GaN基SBD倒装芯片的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109346405B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112103263A (zh) * | 2020-08-26 | 2020-12-18 | 中国电子科技集团公司第十三研究所 | 集成电路接地孔和信号连接压点的引出制备方法及结构 |
Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1557025A (zh) * | 2001-07-23 | 2004-12-22 | ���﹫˾ | 发光器件的倒装结合和适用于倒装结合的发光器件 |
JP2005268296A (ja) * | 2004-03-16 | 2005-09-29 | Nippon Inter Electronics Corp | ショットキーバリアダイオード |
JP2006173321A (ja) * | 2004-12-15 | 2006-06-29 | Toshiba Corp | 半導体装置及びその製造方法 |
US20070096316A1 (en) * | 2005-10-28 | 2007-05-03 | International Rectifier Corporation | Contact pad structure for flip chip semiconductor die |
US20080023785A1 (en) * | 2006-07-28 | 2008-01-31 | Alpha & Omega Semiconductor, Ltd | Bottom source LDMOSFET structure and method |
CN101359657A (zh) * | 2007-07-31 | 2009-02-04 | 万国半导体股份有限公司 | 多芯片直流-直流升压功率变换器的有效力封装结构 |
US20090035925A1 (en) * | 2005-01-06 | 2009-02-05 | Zhu Tinggang | Gallium Nitride Semiconductor Device |
JP2011066193A (ja) * | 2009-09-17 | 2011-03-31 | Rohm Co Ltd | 光学装置および光学装置の製造方法 |
CN102255014A (zh) * | 2010-05-18 | 2011-11-23 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明装置 |
CN102437177A (zh) * | 2011-12-01 | 2012-05-02 | 重庆平伟实业股份有限公司 | 一种新型肖特基倒封装芯片及制造工艺 |
CN102931238A (zh) * | 2011-08-10 | 2013-02-13 | 美丽微半导体股份有限公司 | 具备肖特基能障的定电流半导体元件 |
KR20130106675A (ko) * | 2012-03-20 | 2013-09-30 | 서울반도체 주식회사 | 질화갈륨 기판을 갖는 발광 다이오드 |
CN103762264A (zh) * | 2014-01-07 | 2014-04-30 | 江苏新广联科技股份有限公司 | GaN基UV探测传感器 |
CN104538304A (zh) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | 倒装结构的氮化镓基高电子迁移率晶体管的制作方法 |
CN104868021A (zh) * | 2015-03-30 | 2015-08-26 | 映瑞光电科技(上海)有限公司 | 倒装led芯片及其制造方法 |
CN104935254A (zh) * | 2015-06-26 | 2015-09-23 | 中国电子科技集团公司第十三研究所 | 新型f波段三倍频器 |
CN104994634A (zh) * | 2015-06-29 | 2015-10-21 | 宝钢金属有限公司 | 一种ac-led集成芯片 |
CN105845742A (zh) * | 2016-05-24 | 2016-08-10 | 中国电子科技集团公司第十三研究所 | 梁式引线太赫兹肖特基二极管 |
CN106159075A (zh) * | 2016-09-05 | 2016-11-23 | 江苏新广联半导体有限公司 | 一种具有低热阻绝缘层结构的倒装led芯片及制作方法 |
CN106356379A (zh) * | 2016-10-28 | 2017-01-25 | 江苏新广联半导体有限公司 | GaN基微显示芯片结构及制作方法 |
CN108511531A (zh) * | 2017-02-27 | 2018-09-07 | 苏州晶湛半导体有限公司 | 一种肖特基二极管制作工艺及肖特基二极管 |
CN108767019A (zh) * | 2018-05-22 | 2018-11-06 | 西安电子科技大学 | 一种部分P型AlGaN帽层RESURF GaN基肖特基势垒二极管 |
-
2018
- 2018-11-23 CN CN201811408375.6A patent/CN109346405B/zh active Active
Patent Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1557025A (zh) * | 2001-07-23 | 2004-12-22 | ���﹫˾ | 发光器件的倒装结合和适用于倒装结合的发光器件 |
JP2005268296A (ja) * | 2004-03-16 | 2005-09-29 | Nippon Inter Electronics Corp | ショットキーバリアダイオード |
JP2006173321A (ja) * | 2004-12-15 | 2006-06-29 | Toshiba Corp | 半導体装置及びその製造方法 |
US20090035925A1 (en) * | 2005-01-06 | 2009-02-05 | Zhu Tinggang | Gallium Nitride Semiconductor Device |
US20070096316A1 (en) * | 2005-10-28 | 2007-05-03 | International Rectifier Corporation | Contact pad structure for flip chip semiconductor die |
US20080023785A1 (en) * | 2006-07-28 | 2008-01-31 | Alpha & Omega Semiconductor, Ltd | Bottom source LDMOSFET structure and method |
CN101359657A (zh) * | 2007-07-31 | 2009-02-04 | 万国半导体股份有限公司 | 多芯片直流-直流升压功率变换器的有效力封装结构 |
JP2011066193A (ja) * | 2009-09-17 | 2011-03-31 | Rohm Co Ltd | 光学装置および光学装置の製造方法 |
CN102255014A (zh) * | 2010-05-18 | 2011-11-23 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明装置 |
CN102931238A (zh) * | 2011-08-10 | 2013-02-13 | 美丽微半导体股份有限公司 | 具备肖特基能障的定电流半导体元件 |
CN102437177A (zh) * | 2011-12-01 | 2012-05-02 | 重庆平伟实业股份有限公司 | 一种新型肖特基倒封装芯片及制造工艺 |
KR20130106675A (ko) * | 2012-03-20 | 2013-09-30 | 서울반도체 주식회사 | 질화갈륨 기판을 갖는 발광 다이오드 |
CN103762264A (zh) * | 2014-01-07 | 2014-04-30 | 江苏新广联科技股份有限公司 | GaN基UV探测传感器 |
CN104538304A (zh) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | 倒装结构的氮化镓基高电子迁移率晶体管的制作方法 |
CN104868021A (zh) * | 2015-03-30 | 2015-08-26 | 映瑞光电科技(上海)有限公司 | 倒装led芯片及其制造方法 |
CN104935254A (zh) * | 2015-06-26 | 2015-09-23 | 中国电子科技集团公司第十三研究所 | 新型f波段三倍频器 |
CN104994634A (zh) * | 2015-06-29 | 2015-10-21 | 宝钢金属有限公司 | 一种ac-led集成芯片 |
CN105845742A (zh) * | 2016-05-24 | 2016-08-10 | 中国电子科技集团公司第十三研究所 | 梁式引线太赫兹肖特基二极管 |
CN106159075A (zh) * | 2016-09-05 | 2016-11-23 | 江苏新广联半导体有限公司 | 一种具有低热阻绝缘层结构的倒装led芯片及制作方法 |
CN106356379A (zh) * | 2016-10-28 | 2017-01-25 | 江苏新广联半导体有限公司 | GaN基微显示芯片结构及制作方法 |
CN108511531A (zh) * | 2017-02-27 | 2018-09-07 | 苏州晶湛半导体有限公司 | 一种肖特基二极管制作工艺及肖特基二极管 |
CN108767019A (zh) * | 2018-05-22 | 2018-11-06 | 西安电子科技大学 | 一种部分P型AlGaN帽层RESURF GaN基肖特基势垒二极管 |
Non-Patent Citations (5)
Title |
---|
CHUAN-WEI TSOU,KAI-PIN WEI, YI-WEI LIAN,AND ET AL.: "2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit", 《IEEE ELECTRON DEVICE LETTERS》 * |
SEAL, S.; WALLACE, A.K.; ZUMBRO, J.E.; MANTOOTH, H.A.: "Thermo-mechanical reliability analysis of flip-chip bonded silicon carbide Schottky diodes", 《2017 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP)》 * |
SUN, XJ; ZHAO, LX; YU, ZG; ET AL.: "Analysis of GaN Based LED Performance before and after the ESD Shock", 《2013 10TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (CHINASSL)》 * |
孙晓: "AlGaN/GaN开关器件关键技术的研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
赵妍;马毅超;吴卫东: "不同封装方式对肖特基二极管高频性能的影响", 《强激光与粒子束》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112103263A (zh) * | 2020-08-26 | 2020-12-18 | 中国电子科技集团公司第十三研究所 | 集成电路接地孔和信号连接压点的引出制备方法及结构 |
Also Published As
Publication number | Publication date |
---|---|
CN109346405B (zh) | 2021-12-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100587919C (zh) | 用于氮化物外延生长的纳米级图形衬底的制作方法 | |
WO2021012826A1 (zh) | 一种半导体薄膜剥离及转移衬底的方法 | |
CN108122749B (zh) | 一种基于图形化载片的SiC基GaN_HEMT背面工艺 | |
JP2002164570A (ja) | 窒化ガリウム系化合物半導体装置 | |
CN109712877A (zh) | 欧姆接触电极、hemt器件及制备方法 | |
WO2021217875A1 (zh) | 一种硅衬底上 GaN / 二维 AlN 异质结整流器及其制备方法 | |
WO2019119589A1 (zh) | 一种硅衬底上N极性面高频GaN整流器外延结构及其制备方法 | |
CN109037050A (zh) | 基于TiN的GaN基HEMT无金欧姆接触电极的制备方法 | |
CN101764055A (zh) | 一种提高氮化镓薄膜质量的外延方法 | |
CN105742445A (zh) | 一种垂直led芯片结构及其制备方法 | |
CN109346405A (zh) | 一种GaN基SBD倒装芯片的制备方法 | |
CN113838816B (zh) | 一种具有金刚石钝化层的氮化镓基二极管器件的制备方法 | |
CN103840073B (zh) | 倒装发光二极管器件及其制造方法 | |
CN111668159A (zh) | 一种可剥离蓝宝石衬底的氮化镓基垂直器件制备方法 | |
CN106328776B (zh) | 一种垂直结构紫光led芯片的制备方法 | |
CN109346530A (zh) | 基于石墨烯插入层结构的GaN基肖特基势垒二极管SBD器件及制备方法 | |
CN210805810U (zh) | 一种硅基氮化镓外延结构 | |
CN113871454A (zh) | 基于二氧化硅边缘终端的氧化镓肖特基势垒二极管及其制备方法 | |
CN209056498U (zh) | 半导体器件 | |
US7518163B2 (en) | Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof | |
WO2019153431A1 (zh) | 一种高频氮化镓/石墨烯异质结热电子晶体管的制备方法 | |
CN107104046B (zh) | 氮化镓肖特基二极管的制备方法 | |
CN113745107B (zh) | 一种GaN器件的制作方法 | |
WO2021217301A1 (zh) | 半导体结构的制作方法及半导体结构 | |
CN106711210A (zh) | 介质辅助支撑型纳米栅器件及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Xie Zhijian Inventor after: Huang Huishi Inventor after: Tian Yuan Inventor after: Zhong Yuhuang Inventor after: Yan Xiaomi Inventor after: Wang Shuyu Inventor before: Huang Huishi Inventor before: Tian Yuan Inventor before: Zhong Yuhuang Inventor before: Yan Xiaomi Inventor before: Wang Shuyu |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20211105 Address after: 214192 18 Xishan North Road, Xishan Economic Development Zone, Wuxi, Jiangsu Applicant after: JIANGSU XINGUANGLIAN TECHNOLOGY Co.,Ltd. Applicant after: JIANGSU XGL OPTOELECTRONICS Co.,Ltd. Address before: 214192 18 Xishan North Road, Xishan Economic Development Zone, Wuxi, Jiangsu Applicant before: JIANGSU XINGUANGLIAN SEMICONDUCTOR Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |