WO2021012826A1 - 一种半导体薄膜剥离及转移衬底的方法 - Google Patents

一种半导体薄膜剥离及转移衬底的方法 Download PDF

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WO2021012826A1
WO2021012826A1 PCT/CN2020/095312 CN2020095312W WO2021012826A1 WO 2021012826 A1 WO2021012826 A1 WO 2021012826A1 CN 2020095312 W CN2020095312 W CN 2020095312W WO 2021012826 A1 WO2021012826 A1 WO 2021012826A1
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layer
substrate
thin film
semiconductor thin
seed crystal
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PCT/CN2020/095312
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English (en)
French (fr)
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姜涛
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乂馆信息科技(上海)有限公司
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Publication of WO2021012826A1 publication Critical patent/WO2021012826A1/zh
Priority to US17/580,066 priority Critical patent/US20220148877A1/en

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Definitions

  • the invention belongs to the field of semiconductor technology, and specifically relates to a method for peeling off a semiconductor film and transferring a substrate.
  • GaN material series mainly include GaN, BN and Al x Ga y In1- x - y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) alloy materials.
  • the GaN material series have low heat generation rate and high breakdown electric field, and are important materials for the development of high-temperature high-power electronic devices and high-frequency microwave devices.
  • the GaN material series is also an ideal material for short-wavelength light-emitting devices.
  • the band gap of GaN and its alloys covers the spectral range from red to ultraviolet.
  • the level of GaN material series devices can be put into practical use, the problem of single crystal substrate has not been solved for a long time, and the material film can only be obtained by the heteroepitaxial process.
  • the density of heteroepitaxial defects is quite high, which has further improved the performance of the device.
  • the main obstacle Currently, the mainstream heteroepitaxial substrates used are mainly sapphire and SiC, and there are also commercial applications grown on silicon-based substrates.
  • GaN LED technology based on sapphire substrates has been widely used in commercial applications.
  • One direction is to improve at the package level, and different packaging methods are used to quickly export the heat generated by the device chip to the package heat dissipation substrate
  • the other direction is Technical improvements at the device chip level, such as epitaxial substrate thinning of the chip, minimize the epitaxial substrate material in the non-device functional area, and for example, remove the semiconductor film material layer of the device from the original epitaxial substrate with poor thermal conductivity Stripping and transferring to a secondary support substrate with better thermal conductivity.
  • These technological improvements based on the device chip level can more directly and effectively improve the heat dissipation capacity of the device, thereby improving the device's high-power operation environment or even high-temperature environment Under the stability and reliability.
  • the semiconductor film stripping and substrate transfer technology of the epitaxial layer of the device mainly includes two methods: chemical mechanical polishing technology and laser stripping technology.
  • the chemical mechanical polishing technology is to adhere the smooth surface of the device epitaxial layer of the semiconductor wafer to the temporary support substrate such as Cu, AlN, glass, Si, SiC through epoxy resin, and suck the air bubbles in the resin in a vacuum environment. Fix the temporary support substrate on the polishing disk, and the original epitaxial substrate of the wafer is exposed outside, and then contact the exposed surface of the epitaxial substrate on the polishing pad, by adding corrosive chemical abrasives, and rotating the polishing disk at the same time And polishing pad, perform chemical mechanical polishing on the epitaxial substrate until the epitaxial substrate is thinned to a certain extent, and then use an organic solvent to soak the temporary support substrate, so that the temporary support substrate and the thinned semiconductor crystal of the epitaxial substrate Circle separation restores the smooth surface of the epitaxial film of the device, and finally obtains the semiconductor wafer after the epitaxial substrate is thinned.
  • the device cut from the wafer is compared with the device without the epitaxial substrate
  • the advantage of this technology is that the process is stable and the cost is low, but the disadvantage is that it is only suitable for epitaxial substrate materials that are easy to handle with chemical and physical properties, such as Si material substrates, and substrates with particularly stable physical and chemical properties such as sapphire or SiC.
  • the processing difficulty and cost will rise sharply, and the processing yield is also difficult to guarantee.
  • the epitaxial substrate cannot be thinned indefinitely, otherwise it will bring great challenges to the subsequent device processing technology, and it is easy to cause wafer breakage and reduce the device yield. Therefore, the devices processed by this technology, There will still be a certain thickness of epitaxial substrate material with poor thermal conductivity, which limits the space for improving the thermal conductivity of the device.
  • Laser lift-off technology is to evaporate metal, such as Al, Ag, Ni, Cr, Au, Sn, etc., on the smooth surface of the device epitaxial layer of the semiconductor wafer, and the smooth surface of the device epitaxial layer is combined with Cu, AlN by means of metal eutectic , Si, SiC and other secondary support substrates are adhered and fixed together, and then a certain power laser beam is used to irradiate the epitaxial film of the semiconductor device from the back of the epitaxial substrate (that is, the side without the epitaxial film of the device).
  • metal such as Al, Ag, Ni, Cr, Au, Sn, etc.
  • the energy will cause the semiconductor material at the junction of the epitaxial substrate and the device epitaxial layer film to decompose, so that the device epitaxial layer film is separated from the epitaxial substrate, and the device epitaxial layer film supported by the secondary support substrate with good thermal conductivity is obtained.
  • a secondary support substrate with better thermal conductivity than the epitaxial substrate of the original semiconductor wafer can be used, so the semiconductor wafer obtained by this technology can obtain better thermal conductivity of the device when preparing the device.
  • the advantage of this technology is that it can completely peel off the epitaxial substrate with poor thermal conductivity and replace it with a secondary support substrate with good thermal conductivity. At the same time, since the thickness of the secondary support substrate can be adjusted as required, subsequent device processing can be avoided. The wafer fragmentation caused by the process can maximize the removal of the epitaxial substrate material with poor thermal conductivity while ensuring the processing yield of the device.
  • the disadvantage is that due to the need to use laser irradiation, this technology can only be applied to epitaxial substrate materials that are transparent to the irradiated laser beam. The selection of epitaxial substrate materials has certain limitations.
  • laser irradiation decomposes the epitaxial layer thin film semiconductor of the device A large amount of heat is generated when the material is used, and this heat will also cause a certain degree of damage to the device, which may lead to the degradation of the device performance or even failure, thereby affecting the yield and reliability of the device.
  • the use of laser lift-off technology also loses the smooth surface of the semiconductor material obtained by epitaxy.
  • the ideal result of the transfer substrate is to directly replace the poorly thermally conductive epitaxial substrate with a good thermally conductive secondary support substrate material while retaining the smooth surface of the device epitaxial layer film of the semiconductor wafer, so as to facilitate subsequent smoothing of the device epitaxial layer film Subsequent device processing is performed on the surface, but this technology requires the secondary support substrate to be fixed on the smooth surface of the device epitaxial layer film of the semiconductor wafer at one time, instead of using a temporary support substrate and subsequent separation of the temporary support substrate.
  • One reason for restoring the smooth surface of the device epitaxial layer film is that the large amount of heat generated by this technology during the peeling process will cause the temporary support substrate to fall off. Therefore, only a permanently fixed secondary support substrate can be used. Therefore, the obtained device film is exposed
  • the surface is the contact surface between the epitaxial film of the device and the epitaxial substrate, so the device cannot be further processed, which also limits the process space for device fabrication.
  • the current main problem of GaN material series semiconductor film peeling and transfer substrates is the existence of a certain thickness of epitaxial substrate material with poor thermal conductivity, which limits the space for improving the thermal conductivity of the device.
  • the present invention provides a method for peeling off a semiconductor film and transferring a substrate.
  • the technical problem to be solved by the present invention is realized through the following technical solutions:
  • a method for peeling off a semiconductor film and transferring a substrate includes:
  • the semiconductor thin film base structure including a stacked first substrate layer, a plurality of seed crystal structures, and a semiconductor thin film layer, and the plurality of seed crystal structures have holes and communicate with each other;
  • the side of the plurality of seed crystal structures away from the semiconductor thin film layer is combined with the second substrate layer to complete the process of peeling off the semiconductor thin film and transferring the substrate.
  • preparing a semiconductor thin film base structure includes:
  • a semiconductor thin film layer is grown on the plurality of seed crystal structures.
  • preparing several seed crystal structures on the first substrate layer includes:
  • the epitaxial layer above each recessed structure on the first substrate layer is removed until the substrate layer is exposed, and at least a part of the epitaxial layer above each convex structure on the substrate layer is retained to form the plurality of seed crystal structures.
  • forming a plurality of convex structures and a plurality of concave structures on the substrate layer includes:
  • the exposed surface of the first substrate layer is etched to form the plurality of protruding structures and the plurality of recessed structures on the surface of the first substrate layer.
  • peeling the plurality of seed crystal structures and the semiconductor thin film layer from the first substrate layer includes:
  • the plurality of seed crystal structures and the semiconductor thin film layer are peeled off from the first substrate layer by a chemical etching method.
  • using a chemical etching method to peel off the plurality of seed crystal structures and the semiconductor thin film layer from the first substrate layer includes:
  • a supporting substrate is provided above the semiconductor thin film layer, and a second opening area connected to the first opening area is provided on the supporting substrate;
  • the etching liquid is injected into the holes between the seed crystal structures through the first opening area and the second opening area, so that the seed crystal structures and the semiconductor thin film layer are peeled off from the first substrate layer .
  • the method before peeling the plurality of seed crystal structures and the semiconductor thin film layer from the first substrate layer, the method further includes:
  • a first functional layer is grown on the semiconductor thin film layer, the first functional layer is provided with a fourth opening area, and the fourth opening area is in communication with the first opening area.
  • using a chemical etching method to peel off the plurality of seed crystal structures and the semiconductor thin film layer from the first substrate layer includes:
  • the etching liquid is injected into the holes between the plurality of seed crystal structures through the plurality of third opening regions, so that the plurality of seed crystal structures and the semiconductor thin film layer are peeled off from the first substrate layer.
  • a second functional layer is grown on the semiconductor thin film layer.
  • combining the side of the plurality of seed crystal structures away from the semiconductor thin film layer with the second substrate layer to complete the process of peeling off the semiconductor thin film and transferring the substrate includes:
  • the supporting substrate is removed by a dipping method.
  • the present invention proposes a new method of film peeling and substrate transfer.
  • This method is compatible with various epitaxial substrate materials, while retaining the device epitaxial layer film ( The smooth surface of the semiconductor film layer) does not affect the subsequent processing technology of growing other functional layers for the preparation of the device on the epitaxial layer film, and can replace the first substrate layer with poor thermal conductivity with a second substrate layer with excellent thermal conductivity
  • the second substrate layer can be a conductive substrate or an insulating substrate, which further expands the application space of the device.
  • FIG. 1 is a schematic flow chart of a method for peeling off a semiconductor film and transferring a substrate according to an embodiment of the present invention
  • FIGS. 2a to 2l are schematic diagrams of a method for peeling off a semiconductor film and transferring a substrate according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a patterned first substrate layer provided by an embodiment of the present invention.
  • FIGS. 4a to 4e are schematic diagrams of another method for peeling off a semiconductor film and transferring a substrate according to an embodiment of the present invention
  • 5a to 5f are schematic diagrams of yet another method for stripping and transferring a substrate of a semiconductor film according to an embodiment of the present invention.
  • 6a-6f are schematic diagrams of yet another method for stripping and transferring a substrate of a semiconductor film provided by an embodiment of the present invention.
  • Figure 1 is a schematic flow chart of a method for peeling off a semiconductor film and transferring a substrate provided by an embodiment of the present invention.
  • Figures 2a to 2l are a schematic view of a method for peeling off a semiconductor film provided by an embodiment of the present invention.
  • a schematic diagram of a method of transferring a substrate This embodiment provides a method for peeling off a semiconductor film and transferring a substrate, including:
  • Step 1.1 Prepare a semiconductor thin film base structure.
  • the semiconductor thin film base structure includes a first substrate layer, a plurality of seed crystal structures and a semiconductor thin film layer stacked in sequence, and the plurality of seed crystal structures have holes and communicate with each other.
  • Step 1.11 refer to Figure 2a, select the first substrate layer 101;
  • the first substrate layer 101 may include, for example, silicon (Si), silicon carbide (SiC), diamond, sapphire (Al 2 O 3 ), gallium arsenide (GaAs), aluminum nitride (AlN), gallium nitride (GaN), Metal, metal oxide, compound semiconductor, glass, quartz or composite materials, etc.
  • the substrate layer 101 may also include a single crystal material with a specific crystal phase orientation, such as m-plane SiC or sapphire, ⁇ -plane sapphire, ⁇ -plane sapphire, and c-plane sapphire.
  • the first substrate layer 101 may also include materials composed of undoped, n-type or p-type doped materials.
  • Step 1.12 prepare a number of seed crystal structures 104 on the first substrate layer 101.
  • the seed crystal structures 104 on the first substrate layer 101 are mutually independent structures, and there are pores between the seed crystal structures and these pores are mutually exclusive.
  • the materials of these seed crystal structures may be, for example, III-V group compound semiconductor materials, and specifically may be GaN-based materials.
  • seed crystal structures 104 can be prepared on the first substrate layer 101 through steps 1.121 to 1.123, where:
  • Step 1.121 forming a number of raised structures 1011 and a number of recessed structures 1012 on the surface of the first substrate layer 101;
  • a number of raised structures 1011 and a number of recessed structures 1012 are formed on the surface of the first substrate layer 101 in a patterned manner.
  • the raised structures 1011 and the recessed structures 1012 may be distributed in a periodic manner or aperiodic.
  • the convex structure 1011 and the concave structure 1012 are distributed in a periodic manner, and the periodic distribution may be a complete periodic uniform distribution and/or a partial unit uniform distribution.
  • the profile of the longitudinal section of the raised structure 1011 obtained in this embodiment may be triangular, square, circular, elliptical, trapezoidal or a combination thereof, and the profile of the longitudinal section of the raised structure 1011 may also be Other shapes are not specifically limited in this embodiment.
  • the top of the raised structure 1011 does not have any platform area, that is, the top contour line of at least one of the longitudinal sections of the raised structure 1011 is not a straight line parallel to the horizontal plane.
  • forming a number of raised structures 1011 and a number of recessed structures 1012 on the first substrate layer 101 may specifically include steps 1.1211 to 1.1213, wherein:
  • Step 1.1211 referring to FIG. 2b, a mask layer 102 is grown on the first substrate layer 101;
  • a mask layer 102 is coated with photoresist and/or a mask layer 102 is deposited.
  • the mask layer 102 may be, for example, a photoresist mask.
  • the mask layer 102 may be, for example, SiO 2 and/or Si 3 N 4 , metal nitride, and/or metal oxide.
  • Step 1.1212 referring to FIG. 2c, the mask layer 102 is exposed, developed and etched according to a preset pattern to expose a part of the surface of the first substrate layer 101.
  • the preset pattern is a pattern that needs to be represented by the first substrate layer 101, and the required pattern can be transferred to the mask layer 102 through exposure, development and etching processes, thereby exposing part of the surface of the first substrate layer 101.
  • a number of raised structures 1011 and a number of recessed structures 1012 can also be formed on the substrate layer 101 in other ways, such as depositing a mask layer and etching methods on the first substrate layer 101 according to a preset period and a preset pattern. A number of raised structures 1011 and a number of recessed structures 1012 are formed.
  • a layer of insulating material can be deposited on the surface of the first substrate layer 101, and the insulating material can be one of Al 2 O 3 , SiO 2 , Si 3 N 4 , photoresist, or a combination thereof
  • the insulating material can be one of Al 2 O 3 , SiO 2 , Si 3 N 4 , photoresist, or a combination thereof
  • a periodic (or non-periodic) arrangement pattern is formed, and its contour shape is adjusted by a method of re-deposition and re-etching to form a convex structure 1011 of the desired shape.
  • the deposition process can adopt mechanical coating, In a chemical vapor deposition method or a physical vapor deposition method, the deposition material may be one or a combination of Al 2 O 3 , SiO 2 , Si 3 N 4 , and photoresist.
  • the mask layer can be selectively removed or not removed.
  • the GaN-based material remaining under the mask layer is a higher-quality material obtained by lateral growth over the convex structure of the first substrate layer. Seed structure.
  • Step 1.122 referring to FIG. 2e, grow an epitaxial layer 103 with a smooth surface on the side of the first substrate layer 101 with the convex structure 1011;
  • the epitaxial layer material starts to grow on the side of the first substrate layer 101 with the convex structure 1011.
  • the epitaxial layer material first begins to grow on the surface of the first substrate layer 101 in the recessed structure 1012 until the epitaxial layer material After completely covering the protruding structure 1011 of the first substrate layer 101, an epitaxial layer 103 with a smooth surface is formed.
  • a chemical vapor deposition method or a hydride vapor phase epitaxial growth method may be used to perform epitaxial growth on the side of the first substrate layer 101 with the convex structure 1011 to obtain the epitaxial layer 103 with a smooth surface.
  • the embodiment does not specifically limit the process parameters of the epitaxial layer 103, as long as the epitaxial layer 103 with a smooth surface can be grown on the side of the first substrate layer 101 with the convex structure 1011 to meet the requirement. It should be understood that those skilled in the art can perform epitaxial growth by controlling the process conditions of the epitaxial layer 103 and selecting appropriate patterns and sizes of the protruding structure 1011 and the recessed structure 1012.
  • the chemical vapor deposition may include, for example, MOCVD (metal organic compound chemical vapor deposition) or RPCVD (reduced pressure chemical vapor deposition).
  • MOCVD metal organic compound chemical vapor deposition
  • RPCVD reduced pressure chemical vapor deposition
  • the material of the epitaxial layer 103 may be a III-V compound semiconductor material, for example, it may be a GaN-based material.
  • GaN-based materials may include, for example, GaN, BN, Al x Ga y In1- x - y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) alloy materials, InP, GaAs , Al x Ga y In1- x - y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) alloy materials and Al x Ga y In1- x - y As(0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) alloy material.
  • the GaN-based material may be an undoped, n-type or p-type doped material.
  • the growth method of the GaN-based material can be deposited using a single doped or undoped material, or a combination of undoped and doping steps, or a combination of n-doping and p-doping.
  • Step 1.123 referring to Figure 2f, remove the epitaxial layer 103 above each recessed structure 1012 on the first substrate layer 101 until the first substrate layer 101 is exposed, and leave at least the epitaxial layer 103 above each convex structure 1011 on the first substrate layer 101 A part of the epitaxial layer 103 forms a plurality of seed crystal structures 104, and the seed crystal structure is the material of the epitaxial layer located above the protruding structure 1011;
  • the corresponding epitaxial layer 103 above each recessed structure 1012 is removed until the surface of the first substrate layer 101 is completely exposed, and it is necessary to ensure that there is no epitaxial layer on the exposed surface of the first substrate layer 101
  • the material remains, while retaining the corresponding epitaxial layer 103 above each raised structure 1011, and the corresponding remaining epitaxial layer 103 above each raised structure 1011 serves as a seed structure 104, and the upper part of each raised structure 1011
  • the formed seed crystal structures 104 all exist independently, that is, all the seed crystal structures 104 exist independently of each other on the raised structure 1011.
  • the part of the epitaxial layer 103 above the raised structure 1011 includes both The top area of the raised structure 1011 also includes the side area of the raised structure 1011, wherein the size of the side area can be selected according to actual requirements, and this embodiment does not specifically limit this.
  • the part of the epitaxial layer 103 corresponding to the upper part of the recessed structure 1012 is a heterogeneous material with the first substrate layer 101, the problem of greater influence of lattice mismatch and thermal mismatch and more defects occurs. Therefore, part of the epitaxial layer 103 corresponding to the exposed recessed structure 1012 is removed in this embodiment.
  • the size of the plane area of each seed crystal structure is 0.01 square micrometer to 300,000 square micrometers, preferably 1 square micrometer to 100 square micrometers, and more preferably 1 square micrometer to 30 square micrometers.
  • This embodiment proposes a new method for preparing a pattern substrate.
  • the pattern substrate proposed in this embodiment is based on a heterogeneous substrate material
  • the pattern surface of the pattern substrate is no longer a heterogeneous substrate material.
  • It is transformed into a seed crystal structure showing a distribution of isolated islands.
  • the spacers between the seed crystal structures of the patterned substrate are recesses of a certain depth and width of a heterogeneous substrate material.
  • these seed crystal structures are all the seed crystal structures of GaN-based materials with higher crystal quality obtained by lateral epitaxial growth method (ELOG).
  • ELOG lateral epitaxial growth method
  • the subsequent material growth can be obtained based on the pattern substrate formed by these seed crystal structures. Quality material films and devices.
  • Step 1.13 referring to FIG. 2g, grow a semiconductor thin film layer 105 on several seed crystal structures 104;
  • vapor deposition such as metal organic compound chemical vapor deposition (MOCVD), reduced pressure chemical vapor deposition (RPCVD), etc.
  • vapor phase epitaxy such as organometallic compound vapor phase epitaxy (MOVPE)
  • HVPE material vapor phase epitaxial growth
  • MBE molecular beam epitaxy
  • the semiconductor thin film layer 105 can hardly be affected by foreign substances.
  • the influence of the lattice mismatch and thermal mismatch of the substrate layer 101 has characteristics similar to materials grown on a homogeneous crystal substrate, which can be used to continue to grow the functional layer of the device, which is the function required for these device structures
  • the layer provides a high-quality first epitaxial layer foundation.
  • the material of the semiconductor thin film layer 105 may be a III-V compound semiconductor material, for example, it may be a GaN-based material.
  • GaN-based materials may include, for example, GaN, BN, Al x Ga y In1- x - y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) alloy materials, InP, GaAs , Al x Ga y In1- x - y P (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) alloy materials and Al x Ga y In1- x - y As(0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1) alloy material.
  • the semiconductor thin film layer 105 and the seed structure 104 have the same material.
  • the growth of the ELOG process makes these seed crystal structures form the second A single crystal thin film layer has high quality. Furthermore, since the spacers between the seed crystal structures of the pattern substrate are formed on the substrate layer and have a certain depth and width, the thickness of the heterogeneous substrate layer (first substrate layer) during the preparation of the semiconductor thin film layer The recessed structure does not grow GaN-based materials, and the process of closing the seed crystal structures through the lateral epitaxial epitaxy method is completed above the recessed structure of the heterogeneous substrate layer, so it is obtained by the lateral epitaxial epitaxy method between the seed crystal structures There will be a large number of interconnected holes between the semiconductor thin film layer with a smooth surface and the heterogeneous substrate layer.
  • the lattice between the heterogeneous substrate layer and the GaN material can be greatly reduced.
  • the defects of the semiconductor thin film layer caused by mismatch and thermal mismatch can improve the crystalline quality of the semiconductor thin film layer, and at the same time, it can also provide favorable conditions for peeling the semiconductor thin film layer from the heterogeneous substrate layer.
  • Step 1.2 peel off the plurality of seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101;
  • a number of seed crystal structures and semiconductor thin film layers can be stripped from the first substrate layer by chemical etching. By stripping the seed crystal structure and semiconductor thin film layers from the first substrate layer, the difference can be removed. The problem of poor thermal conductivity caused by the substrate layer.
  • peeling off the several seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101 can be specifically implemented through steps 1.21 to 1.23, where:
  • Step 1.21 referring to FIG. 2h, a plurality of first opening regions 106 are formed in the semiconductor thin film layer 105, and the first opening regions 106 are connected to the holes (that is, the positions of the recessed structures 1012).
  • the first open area 106 may be an open area naturally formed by controlling the spacing of the seed crystal structure distribution combined with a growth process, or an open area obtained by dry etching or wet etching, or a solvent Soak the open area obtained by the dissolution method.
  • the first opening area 106 may be on the smooth surface of the semiconductor thin film layer 105, or on the edge of the semiconductor thin film layer 105, or both on the smooth surface and the edge of the semiconductor thin film layer 105.
  • Step 1.22 referring to Fig. 2i, the semiconductor thin film layer 105 is adhered to the supporting substrate 107, and the supporting substrate 107 is provided with a second opening area 108 connected to the first opening area 106;
  • the semiconductor thin film layer 105 is adhered to the supporting substrate 107 through an adhesive, the bubbles in the adhesive are sucked away in a vacuum environment, and the second opening area 108 of the supporting substrate 107 is connected to the first opening area 106 at the same time, It should be understood that this embodiment does not make specific requirements on the shape, position, and number of the second opening area 108, as long as it can meet the requirements of communicating with the hole, and the second opening area 108 may be used for processing the support substrate.
  • the structure formed at 107 thereby exposing the first opening area 106, or after adhering the support substrate 107 to the semiconductor thin film layer 105, dry etching and/or wet etching,
  • the opening area etched away from the side of the support substrate 107 of the semiconductor thin film layer 105, so that a number of interconnected holes between the semiconductor thin film layer 105 and the first substrate layer 101 can communicate with the outside through the second opening area 108 .
  • the material of the supporting substrate 107 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • the adhesive may be one or a combination of organic resin, silica gel, glass glue, and polymer adhesive.
  • Step 1.23 referring to Figure 2j, the etching liquid is injected into the holes between the seed crystal structures 104 through the first opening area 106 and the second opening area 108, so that the seed crystal structures 104 and the semiconductor thin film layer 105 are removed from the first substrate layer 101 peeled off.
  • a chemical etching liquid is injected into the holes between the seed crystal structures 104 through the first opening area 106 and the second opening area 108, and the semiconductor material connected between the seed crystal structure 104 and the first substrate layer 101 is etched, The seed structure 104 and the semiconductor thin film layer 105 are peeled off from the first substrate layer 101.
  • the chemical corrosion liquid can be one or a combination of phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solution, and alkaline solution, and the corrosion process can be a single corrosive liquid. Corrosion and/or multiple types of corrosive liquids alternate in a certain order and/or alternate cycles.
  • the first substrate layer 101 may be heated, the supporting substrate 107 may be heated, or the second substrate layer 107 may be heated at the same time.
  • a substrate layer 101 and a supporting substrate 107 are heated.
  • Step 1.3 Combine the side of the plurality of seed crystal structures 104 away from the semiconductor thin film layer 105 with the second substrate layer 109;
  • the semiconductor thin film layer 105 and the seed structure 104 that have been peeled off by chemical etching are combined with the second substrate layer 109 to form a semiconductor device having both a supporting substrate 108 and a second substrate layer 109;
  • the material of the second substrate layer 109 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • step 1.3 can be specifically implemented through step 1.31 to step 1.32, where:
  • Step 1.31 referring to FIG. 2k, attach several seed crystal structures 104 to the second substrate layer 109 on the side away from the semiconductor thin film layer 105;
  • the method of combining the seed crystal structure 104 with the second substrate layer 109 in this embodiment is preferably to form a layer of metal on the connecting surface of the seed crystal structure 104 and the second substrate layer 109 by evaporation or sputtering, and then A layer of metal is electroplated on the second substrate layer material as the second substrate layer 109, or another substrate can be bonded on the metal surface to form a composite second substrate layer 109, or it can be on the seed crystal of the connecting surface.
  • the second substrate layer 109 is directly bonded to the structure 104.
  • Step 1.32 referring to FIG. 21, the supporting substrate 108 is removed from the semiconductor thin film layer 105 by the immersion method, and the process of peeling off the semiconductor thin film and transferring the substrate is completed.
  • the semiconductor thin film layer 105 with the supporting substrate 108 and the second substrate layer 109 is soaked in a solvent to dissolve the adhesive, and the supporting substrate 108 is removed to restore the smooth semiconductor thin film layer 105 to obtain the semiconductor thin film peeling and transfer
  • the semiconductor film with the second substrate layer 109 behind the substrate may be heating the second substrate layer 109, or heating the supporting substrate 108, or heating the second substrate layer 109 and the supporting substrate 108 at the same time.
  • the part of the semiconductor thin film layer with the opening area can be removed, and the remaining part without the opening area can be retained, and the required device can be further prepared or used.
  • the solvent can be one or a combination of organic solvents, phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solutions, and alkaline solutions.
  • the dissolution process can be a single solvent and/or Various types of solvents alternate in a certain order and/or cycle.
  • the present invention proposes a new method of film peeling and transferring substrate, which can be compatible with various epitaxial substrate materials while retaining the smoothness of the semiconductor film layer.
  • the surface does not affect the subsequent processing technology of growing other functional layers for the preparation of the device on the semiconductor film layer, and can replace the first substrate layer with poor thermal conductivity with a second substrate layer with excellent thermal conductivity.
  • the second substrate layer can be a conductive substrate or an insulating substrate, which further expands the application space of the device.
  • the peeling process of the semiconductor thin film layer does not generate a lot of heat, so it will not cause any damage to the device.
  • the first substrate layer with poor thermal conductivity can be directly replaced with the second substrate layer with good thermal conductivity, so that the semiconductor prepared by this method
  • the device has good heat dissipation capability and is more suitable for various high-power application scenarios.
  • the method of this embodiment can produce a large number of holes between the second substrate layer and the semiconductor thin film layer of the GaN material series, it is beneficial to reduce the defect density of the semiconductor thin film layer of the GaN material series and improve the semiconductor thin film layer of the GaN material series. The crystal quality of the thin film layer, therefore, the method can further improve the performance of the GaN material series semiconductor device.
  • the present invention also proposes another method for peeling off the first substrate layer.
  • the semiconductor thin film base structure is obtained through step 1.1 in the first embodiment, and then the several seed crystal structures and semiconductor thin film layers are peeled from the first substrate layer using the method of peeling off the first substrate layer provided in this embodiment.
  • FIGS. 4a to 4e are schematic diagrams of a method for peeling off a semiconductor film and transferring a substrate provided by an embodiment of the present invention.
  • the method for peeling off a first substrate layer provided by this embodiment may include:
  • Step 2.1 Peel off the seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101;
  • a number of seed crystal structures 104 and semiconductor thin film layers 105 can be peeled off from the first substrate layer 101 by using a chemical etching method, by removing the seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer. Peeling can remove the problem of poor thermal conductivity caused by the heterogeneous substrate layer.
  • the peeling of the plurality of seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101 can be specifically implemented through steps 2.11 to 2.13, where:
  • Step 2.11 referring to FIG. 4a, the semiconductor thin film layer 105 is adhered to the supporting substrate 107.
  • the semiconductor thin film layer 105 is adhered to the supporting substrate 107 through an adhesive, and bubbles in the adhesive are sucked away in a vacuum environment.
  • the material of the supporting substrate 107 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • the adhesive may be one or a combination of organic resin, silica gel, glass glue, and polymer adhesive.
  • Step 2.12 referring to FIG. 4b, a number of third opening regions are etched on the side of the first substrate layer 101 away from the seed structure, and the third opening regions are connected to the holes;
  • interconnected holes between the formed smooth semiconductor thin film layer 105 and the first substrate layer 101, and then a number of third opening regions 110 are formed on the first substrate layer 10.
  • the interconnected holes can pass through the third The opening area 110 is in communication with the outside, and the third opening area 110 can be etched on the side of the first substrate layer 101 away from the semiconductor thin film layer 105 by dry etching and/or wet etching, so that Several interconnected holes between the semiconductor thin film layer 105 and the first substrate layer 101 may communicate with the outside through the third opening area 110. It should be understood that this embodiment does not make specific requirements for the shape, position, and number of the third opening area 110, as long as it can meet the requirements of being connected to the hole.
  • Step 2.13 referring to FIG. 4c, the etching liquid is injected into the holes between the seed crystal structures 104 through the third opening regions 110, so that the seed crystal structures 104 and the semiconductor thin film layer 105 are peeled from the first substrate layer 101;
  • a chemical etching liquid is injected into the holes between the seed crystal structures 104 through the third opening area 110, and the semiconductor material connected between the seed crystal structure 104 and the first substrate layer 101 is corroded, and the seed crystal structure 104 and The semiconductor thin film layer 105 is peeled from the first base layer 101.
  • the chemical corrosion liquid can be one or a combination of phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solution, and alkaline solution, and the corrosion process can be a single corrosive liquid. Corrosion and/or multiple types of corrosive liquids alternate in a certain order and/or alternate cycles.
  • Step 2.2 Combine the side of the plurality of seed crystal structures 104 away from the semiconductor thin film layer 105 with the second substrate layer 109;
  • the semiconductor thin film layer 105 and the seed structure 104 that have been peeled off by chemical etching are combined with the second substrate layer 109 to form a semiconductor device having both a supporting substrate 108 and a second substrate layer 109;
  • the material of the second substrate layer 109 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • step 2.2 can be specifically implemented through steps 2.21 to 2.22, where:
  • Step 2.21 adhere a plurality of seed crystal structures 104 on the second substrate layer 109 on the side away from the semiconductor thin film layer 105;
  • the method of combining the seed crystal structure 104 with the second substrate layer 109 in this embodiment may preferably be to form a layer of metal on the connecting surface of the seed crystal structure 104 and the second substrate layer 109 by evaporation or sputtering, and then A layer of metal is electroplated on the second substrate layer material as the second substrate layer 109, or another substrate can be bonded on the metal surface to form a composite second substrate layer 109, or it can be on the seed crystal of the connecting surface.
  • the second substrate layer 109 is directly bonded to the structure 104.
  • Step 2.22 referring to FIG. 4e, the supporting substrate 108 is removed from the semiconductor thin film layer 105 by the immersion method to complete the process of peeling off the semiconductor thin film and transferring the substrate.
  • the semiconductor thin film layer 105 with the supporting substrate 108 and the second substrate layer 109 is soaked in a solvent to dissolve the adhesive, and the supporting substrate 108 is removed to restore the smooth semiconductor thin film layer 105 to obtain the semiconductor thin film peeling and transfer
  • the semiconductor film with the second substrate layer 109 behind the substrate may be heating the second substrate layer 109, or heating the supporting substrate 108, or heating the second substrate layer 109 and the supporting substrate 108 at the same time.
  • the solvent can be one or a combination of organic solvents, phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solutions, and alkaline solutions.
  • the dissolution process can be a single solvent and/or Various types of solvents alternate in a certain order and/or cycle.
  • the part of the second substrate layer with the opening area can be removed, and the remaining part without the opening area can be retained, and the required device can be further prepared or used.
  • the present invention innovatively proposes that the technical advantages of the patterned substrate and the lateral epitaxial growth method (ELOG) are compatible, and the interconnected holes between the semiconductor thin film layer and the first substrate layer can be finally realized.
  • the first substrate layer with poor thermal conductivity is replaced with a second substrate layer with excellent thermal conductivity, while retaining the smooth surface of the semiconductor thin film layer, which does not affect the subsequent processing of the semiconductor thin film layer and is compatible with various epitaxial substrate materials.
  • the semiconductor device manufactured by the method of this embodiment does not generate a large amount of heat during the peeling process of the semiconductor thin film layer of the entire device, so it will not cause any damage to the device, and the yield and reliability of the device are improved.
  • the semiconductor device prepared by the method has good heat dissipation capacity and is more suitable for various high-power application scenarios.
  • the second substrate layer can be a conductive substrate or an insulating substrate, which can further expand the device Using space has great commercial value.
  • the semiconductor thin film layer of the GaN material series obtained by this embodiment can basically get rid of the influence caused by the lattice mismatch and thermal mismatch of the substrate, and minimize the effect of defects and stress caused by it.
  • the quality of the semiconductor film layer of this GaN material series can be close to that of the material prepared on a homogeneous single crystal substrate, so it can greatly reduce the cost of research and application of semiconductor materials based on the GaN material series.
  • This derivative application also has huge The research, application value and commercial value of
  • the present invention also proposes a method for device-based semiconductor film stripping and substrate transfer.
  • the semiconductor thin film base structure is obtained through step 1.1 in the first embodiment, and then a functional layer is grown on the semiconductor thin film layer of the semiconductor thin film base structure obtained in the first embodiment.
  • Figures 5a to 5f are the implementation of the present invention.
  • the example provides a schematic diagram of another method for peeling off a semiconductor film and transferring a substrate.
  • the method for growing a functional layer on a semiconductor film layer includes:
  • Step 3.1 referring to FIG. 5a, a first functional layer 111 is grown on the semiconductor thin film layer 105, the first functional layer 111 is provided with a fourth opening area, and the fourth opening area is connected to the first opening area;
  • the first functional layer 111 may be an n-type doped semiconductor material layer, a p-type doped semiconductor material layer, or a non-intentionally doped semiconductor material layer required for forming optoelectronic devices and/or power devices.
  • At least one of a material layer, a superlattice layer, and a quantum well layer, that is, the first functional layer 111 may be an n-type doped semiconductor material layer, a p-type doped semiconductor material layer, or an unintentionally doped semiconductor material Any one of a layer, a superlattice layer, and a quantum well layer can also be an n-type doped semiconductor material layer, a p-type doped semiconductor material layer, an unintentionally doped semiconductor material layer, or a superlattice
  • the combination of multiple structures of the layer and the quantum well layer is illustrated with a combination of multiple structures.
  • n-type doped semiconductor material layers and p-type doped semiconductor material layers can be sequentially grown on the semiconductor thin film layer 105.
  • an n-type doped semiconductor material layer and a p-type doped semiconductor material layer may be sequentially grown on the semiconductor thin film layer 105.
  • the first functional layer 111 may also be another material layer forming the optoelectronic device and/or power device, which is not specifically limited in this embodiment.
  • the growth process of the first functional layer 111 may be, for example, MOCVD or other commonly used growth processes, which is not specifically limited in this implementation.
  • Step 3.2 peeling the plurality of seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101;
  • several seed crystal structures 104 and semiconductor thin film layers 105 can be peeled off from the first substrate layer 101 by using a chemical etching method, by peeling the seed crystal structures 104 and semiconductor thin film layers 105 from the first substrate layer 101 , Can remove the poor thermal conductivity caused by the heterogeneous substrate layer.
  • peeling off the several seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101 can be specifically implemented through steps 3.21 to 3.23, where:
  • Step 3.21 referring to FIG. 5b, a plurality of fourth opening regions 112 are formed on the first functional layer 111, and the fourth opening regions 112 and the first opening regions 106 are connected to each other.
  • the fourth opening area 112 may be an opening area naturally formed by controlling the spacing of the seed structure distribution combined with a growth process, or an opening area obtained by dry etching or wet etching, or an opening area obtained by solvent Soak the open area obtained by the dissolution method.
  • the fourth opening area 112 may be on the surface of the first functional layer 111, or on the edge of the first functional layer 111, or on both the surface and the edge of the first functional layer 111.
  • Step 3.22 referring to Fig. 5c, the first functional layer 111 is adhered to the supporting substrate 107, and the supporting substrate 107 is provided with a second opening area 108 connected to the fourth opening area 112;
  • the first functional layer 111 is adhered to the supporting substrate 107 by an adhesive, the bubbles in the adhesive are sucked out in a vacuum environment, and the second opening area 108 of the supporting substrate 107 is connected to the fourth opening area 112 at the same time.
  • this embodiment does not make specific requirements on the shape, position, and number of the second opening area 108, as long as it can meet the requirements of being connected to the fourth opening area 112, and the second opening area 108 may be The structure formed when the support substrate 107 is processed to expose the first opening area 106, or after the support substrate 107 is adhered to the first functional layer 111, dry etching and/or Wet etching is to etch the opening area on the side of the support substrate 107 away from the semiconductor thin film layer 105, so that several interconnected holes between the semiconductor thin film layer 105 and the first substrate layer 101 can pass through the second The opening area 108 communicates with the outside.
  • the material of the supporting substrate 107 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • the adhesive may be one or a combination of organic resin, silica gel, glass glue, and polymer adhesive.
  • Step 3.23 referring to Figure 5d, the etching liquid is injected into the holes between the seed crystal structures 104 through the first opening area 106, the second opening area 108 and the fourth opening area 112, so that the seed crystal structures 104 and the semiconductor thin film layer 105 is peeled off from the first underlayer 101.
  • the chemical etching liquid is injected into the holes between the seed crystal structures 104 through the first opening area 106, the second opening area 108 and the fourth opening area 112, and the gap between the seed crystal structure 104 and the first substrate layer 101 is etched.
  • the connected semiconductor material peels the seed structure 104 and the semiconductor thin film layer 105 from the first substrate layer 101.
  • the chemical corrosion liquid can be one or a combination of phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solution, and alkaline solution, and the corrosion process can be a single corrosive liquid. Corrosion and/or multiple types of corrosive liquids alternate in a certain order and/or alternate cycles.
  • the process of peeling the seed structure 104 and the semiconductor thin film layer 105 from the first substrate layer 101 may be heating the first substrate layer 101, heating the supporting substrate 107, or simultaneously heating the first substrate layer 101.
  • a substrate layer 101 and a supporting substrate 107 are heated.
  • Step 3.3 Combine the side of the plurality of seed crystal structures 104 away from the semiconductor thin film layer 105 with the second substrate layer 109;
  • the semiconductor thin film layer 105 and the seed structure 104 that have been peeled off by chemical etching are combined with the second substrate layer 109 to form a semiconductor device having both a supporting substrate 108 and a second substrate layer 109;
  • the material of the second substrate layer 109 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • step 3.3 can be specifically implemented through step 3.31 to step 3.32, where:
  • Step 3.31 referring to FIG. 5e, attach a plurality of seed crystal structures 104 to the second substrate layer 109 on the side away from the semiconductor thin film layer 105;
  • the method of combining the seed crystal structure 104 with the second substrate layer 109 in this embodiment may preferably be to form a layer of metal on the connecting surface of the seed crystal structure 104 and the second substrate layer 109 by evaporation or sputtering, and then A layer of metal is electroplated on the second substrate layer material as the second substrate layer 109, or another substrate can be bonded on the metal surface to form a composite second substrate layer 109, or it can be on the seed crystal of the connecting surface.
  • the second substrate layer 109 is directly bonded to the structure 104.
  • step 3.32 referring to FIG. 5f, the supporting substrate 108 is removed from the semiconductor thin film layer 105 by the immersion method to complete the process of peeling off the semiconductor thin film and transferring the substrate.
  • the semiconductor thin film layer 105 with the supporting substrate 108 and the second substrate layer 109 is soaked in a solvent to dissolve the adhesive, and the supporting substrate 108 is removed to restore the smooth semiconductor thin film layer 105 to obtain the semiconductor thin film peeling and transfer
  • the semiconductor film with the second substrate layer 109 behind the substrate may be heating the second substrate layer 109, or heating the supporting substrate 108, or heating the second substrate layer 109 and the supporting substrate 108 at the same time.
  • the solvent can be one or a combination of organic solvents, phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solutions, and alkaline solutions.
  • the dissolution process can be the single solvent and / Or multiple types of solvents alternate in a certain order and/or cycle.
  • the semiconductor thin film layer portion and the functional layer portion with the opening area can be removed, and the remaining portion without the opening area can be retained, and the required device can be further prepared or used.
  • the present invention proposes a new method of film stripping and substrate transfer.
  • This method is compatible with various epitaxial substrate materials, while retaining the semiconductor film layer of the device.
  • the smooth surface does not affect the subsequent processing technology of growing other functional layers for preparing devices on the semiconductor film layer, and can replace the first substrate layer with poor thermal conductivity with a second substrate layer with excellent thermal conductivity.
  • the second substrate layer can be a conductive substrate or an insulating substrate, which further expands the application space of the device.
  • the peeling process of the semiconductor thin film layer does not generate a lot of heat, so it will not cause any damage to the device.
  • the first substrate layer with poor thermal conductivity can be directly replaced with the second substrate layer with good thermal conductivity, so that the semiconductor prepared by this method
  • the device has good heat dissipation capability and is more suitable for various high-power application scenarios.
  • the method of this embodiment can produce a large number of holes between the second substrate layer and the semiconductor thin film layer of the GaN material series, it is beneficial to reduce the defect density of the semiconductor thin film layer of the GaN material series and improve the semiconductor thin film layer of the GaN material series. The crystal quality of the thin film layer, therefore, the method can further improve the performance of the GaN material series semiconductor device.
  • the present invention also proposes another method for manufacturing the device.
  • the semiconductor thin film base structure is obtained through step 1.1 in the first embodiment, and then a functional layer is grown on the semiconductor thin film layer of the semiconductor thin film base structure obtained in the first embodiment.
  • Figures 6a to 6f are the implementation of the present invention.
  • the example provides a schematic diagram of another method for peeling off a semiconductor film and transferring a substrate.
  • the method for growing a functional layer on a semiconductor film layer includes:
  • Step 4.1 referring to FIG. 6a, grow a second functional layer 113 on the semiconductor thin film layer 105;
  • the second functional layer 113 may be an n-type doped semiconductor material layer, a p-type doped semiconductor material layer, or a non-intentionally doped semiconductor material layer required for forming optoelectronic devices and/or power devices.
  • At least one of the material layer, the superlattice layer and the quantum well layer, that is, the functional layer 111 may be an n-type doped semiconductor material layer, a p-type doped semiconductor material layer, a non-intentionally doped semiconductor material layer, Any one of the superlattice layer and the quantum well layer can also be an n-type doped semiconductor material layer, a p-type doped semiconductor material layer, an unintentionally doped semiconductor material layer, a superlattice layer and The combination of multiple structures of the quantum well layer is illustrated by a combination of multiple structures.
  • an n-type doped semiconductor material layer, a p-type doped semiconductor material layer, and a non-intentional doped semiconductor material layer are sequentially grown on the semiconductor thin film layer 105.
  • n-type doped semiconductor material layers and p-type doped layers can be sequentially grown on the semiconductor thin film layer 105 The semiconductor material layer, the non-intentionally doped semiconductor material layer, thereby forming the optoelectronic device and/or the power device.
  • an n-type doped semiconductor material layer and a p-type doped semiconductor material layer can be sequentially grown on the semiconductor thin film layer 105 Semiconductor material layer and superlattice layer, thereby forming optoelectronic devices and/or power devices.
  • this embodiment does not apply n-type doped semiconductor material layers, p-type doped semiconductor material layers, and unintentional
  • the growth sequence of the doped semiconductor material layer, superlattice layer, and quantum well layer on the semiconductor thin film layer 105 requires specific requirements, and those skilled in the art can adjust them according to actual needs and applications.
  • the second functional layer 113 may also be another material layer forming the optoelectronic device and/or power device, which is not specifically limited in this embodiment.
  • the growth process of the second functional layer 113 may be, for example, MOCVD or other commonly used growth processes, which is not specifically limited in this implementation.
  • Step 4.2 peel off the plurality of seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101;
  • a number of seed crystal structures and semiconductor thin film layers can be peeled off from the first substrate layer by a chemical etching method.
  • the heterogeneous lining can be removed. Poor thermal conductivity caused by the bottom layer.
  • peeling off the several seed crystal structures 104 and the semiconductor thin film layer 105 from the first substrate layer 101 can be specifically implemented through steps 4.21 to 4.23, where:
  • Step 4.21 referring to FIG. 6b, the second functional layer 113 is adhered to the supporting substrate 107.
  • the second functional layer 113 is adhered to the supporting substrate 107 through an adhesive, and bubbles in the adhesive are sucked away in a vacuum environment.
  • the material of the supporting substrate 107 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • the adhesive may be one or a combination of organic resin, silica gel, glass glue, and polymer adhesive.
  • Step 2.12 referring to FIG. 6c, a number of third opening regions 110 are etched on the side of the first substrate layer 101 away from the seed structure, and the third opening regions 110 are connected to the holes;
  • the third opening area 110 can be dry etched and/or wet etched to etch the opening area on the side of the first substrate layer 101 far away from the semiconductor thin film layer 105, so that the semiconductor Several interconnected holes between the thin film layer 105 and the first substrate layer 101 can communicate with the outside through the third opening area 110. It should be understood that this embodiment does not make specific requirements for the shape, position, and number of the third opening area 110, as long as it can meet the requirements of being connected to the hole.
  • Step 2.13 referring to FIG. 6d, the etching liquid is injected into the holes between the seed crystal structures 104 through the third opening regions 110, so that the seed crystal structures 104 and the semiconductor thin film layer 105 are peeled off from the first substrate layer 101;
  • the etching liquid is injected into the holes between the seed crystal structures 104 through the third opening area 110, so that the seed crystal structures 104 and the semiconductor thin film layer 105 are peeled from the first substrate layer 101.
  • a chemical etching liquid is injected into the holes between the seed crystal structures 104 through the third opening area 110, and the semiconductor material connected between the seed crystal structure 104 and the first substrate layer 101 is corroded, and the seed crystal structure 104 and the semiconductor material The thin film layer 105 is peeled from the first base layer 101.
  • the chemical corrosion liquid can be one or a combination of phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solution, and alkaline solution, and the corrosion process can be a single corrosive liquid. Corrosion and/or multiple types of corrosive liquids alternate in a certain order and/or alternate cycles.
  • Step 2.2 Combine the side of the plurality of seed crystal structures 104 away from the semiconductor thin film layer 105 with the second substrate layer 109;
  • the semiconductor thin film layer 105 and the seed structure 104 that have been peeled off by chemical etching are combined with the second substrate layer 109 to form a semiconductor device having both a supporting substrate 108 and a second substrate layer 109;
  • the material of the second substrate layer 109 may be one or a combination of Cu, AlN, glass, Si, SiC, metal, metal nitride, metal oxide, ZnO, plastic, and polymer compound.
  • step 2.2 can be specifically implemented through steps 2.21 to 2.22, where:
  • Step 2.21 adhere a plurality of seed crystal structures 104 on the second substrate layer 109 on the side away from the semiconductor thin film layer 105;
  • the method of combining the seed crystal structure 104 with the second substrate layer 109 in this embodiment may preferably be to form a layer of metal on the connecting surface of the seed crystal structure 104 and the second substrate layer 109 by evaporation or sputtering, and then A layer of metal is electroplated on the second substrate layer material as the second substrate layer 109, or another substrate can be bonded on the metal surface to form a composite second substrate layer 109, or it can be on the seed crystal of the connecting surface.
  • the second substrate layer 109 is directly bonded to the structure 104.
  • step 2.22 referring to FIG. 6f, the supporting substrate 108 is removed from the second functional layer 113 by the immersion method to complete the process of peeling off the semiconductor film and transferring the substrate.
  • the above-mentioned semiconductor thin film layer 105 having the supporting substrate 108 and the second substrate layer 109 is soaked in a solvent to dissolve the adhesive, and the supporting substrate 108 is removed to restore the second functional layer 113, thereby obtaining the semiconductor thin film peeling and transfer
  • a semiconductor thin film device with a second substrate layer 109 behind the substrate may be heating the second substrate layer 109, or heating the supporting substrate 108, or heating the second substrate layer 109 and the supporting substrate 108 at the same time.
  • the solvent can be one or a combination of organic solvents, phosphoric acid, nitric acid, hydrogen peroxide, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, acidic solutions, and alkaline solutions.
  • the dissolution process can be a single solvent and/or Various types of solvents alternate in a certain order and/or cycle.
  • the part of the second substrate layer with the third opening area can be removed, leaving the remaining part without the third opening area, and further preparing or using the required device.
  • the present invention proposes a new method of film stripping and substrate transfer.
  • This method is compatible with various epitaxial substrate materials, while retaining the semiconductor film layer of the device.
  • the smooth surface does not affect the subsequent processing technology of growing other functional layers for preparing devices on the semiconductor film layer, and can replace the first substrate layer with poor thermal conductivity with a second substrate layer with excellent thermal conductivity.
  • the second substrate layer can be a conductive substrate or an insulating substrate, which further expands the application space of the device.
  • the peeling process of the semiconductor thin film layer does not generate a lot of heat, so it will not cause any damage to the device.
  • the first substrate layer with poor thermal conductivity can be directly replaced with the second substrate layer with good thermal conductivity, so that the semiconductor prepared by this method
  • the device has good heat dissipation capability and is more suitable for various high-power application scenarios.
  • the method of this embodiment can produce a large number of holes between the second substrate layer and the semiconductor thin film layer of the GaN material series, it is beneficial to reduce the defect density of the semiconductor thin film layer of the GaN material series and improve the semiconductor thin film layer of the GaN material series. The crystal quality of the thin film layer, therefore, the method can further improve the performance of the GaN material series semiconductor device.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features.
  • “plurality” means two or more, unless otherwise specifically defined.
  • the "above” or “below” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.

Abstract

本发明公开了一种半导体薄膜剥离及转移衬底的方法，包括：制备半导体薄膜基底结构，所述半导体薄膜基底结构包括层叠的第一衬底层、若干籽晶结构和半导体薄膜层，且所述若干籽晶结构之间有孔洞且相互连通；将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离；将所述若干籽晶结构远离所述半导体薄膜层的一侧与第二衬底层结合，完成半导体薄膜的剥离及转移衬底的过程。本发明的薄膜剥离及转移衬底的方法能够兼容各种外延衬底材料，同时还可以保留器件外延层薄膜的平滑表面，不影响在外延层薄膜上生长其它用于制备器件的功能层的后续工艺加工。

Description

一种半导体薄膜剥离及转移衬底的方法 技术领域
本发明属于半导体技术领域，具体涉及一种半导体薄膜剥离及转移衬底的方法。
背景技术
GaN材料系列主要包含GaN、BN和Al xGa yIn1- x- yN(0≤x≤1，0≤y≤1，0≤x+y≤1)合金材料。GaN材料系列具有低的热产生率和高的击穿电场，是研制高温大功率电子器件和高频微波器件的重要材料。同时GaN材料系列也是一种理想的短波长发光器件材料，GaN及其合金的带隙覆盖了从红色到紫外的光谱范围。自从1991年日本研制出同质结GaN蓝色LED之后，InGaN/AlGaN双异质结超亮度蓝色LED、InGaN单量子阱GaN LED相继问世。正因为GaN材料系列的诸多卓越性能，作为第三代半导体的重要半导体材料之一，其研究与应用是目前全球半导体研究的前沿和热点。
虽然GaN材料系列器件水平已经可以实用化，但长期以来由于衬底单晶的问题没有解决，只能依赖异质外延工艺来获得材料薄膜，而异质外延缺陷密度相当高，成为器件性能进一步提升的主要障碍。当下主流采用的异质外延衬底以蓝宝石和SiC为主，也有在硅基衬底上生长的商业应用，特别是基于蓝宝石衬底的GaN LED技术，已经得到了广泛的商业化应用。
随着GaN材料系列器件的应用场景不断向大功率器件的方向发展，由于器件工作时产生大量的热量，如果热量不能够及时被传导出去，则器件会由于自身的温度升高而导致性能的衰减甚至失效，所以器件的散热问题一直都是一个亟待解决的问题。目前对于解决散热问题一般会从两个方向着手，一个方向就是在封装层面进行改进，采用不同的封装方法，尽量将器件芯片产生的热量快速地导出到封装散热基板上，另一个方向则是在器件芯片的层面进行技术改进，例如对芯片进行外延衬底减薄，尽量减少非器件功能区域的外延衬底材料，又例如将器件的半导体薄膜材料层从原来导热能力不好的外延衬底上剥离，转移到导热性能更好的二次支撑衬底上，这些基于器件芯片层面的技术改进，能够更直接和更有效的改善器件的散热能力，从而提高器件在大功率运行环境下甚至高温环境下的稳定性和可靠性。目前器件外延层的半导体薄膜剥离及转移衬底技术主要有化学机械研磨技术和激光剥离技术两种方法。
化学机械研磨技术是将半导体晶圆的器件外延层平滑表面通过环氧型树脂粘附在Cu、AlN、玻璃、Si、SiC等临时支撑衬底上，在真空环境中抽走树脂中的气泡，将临时支撑衬底固定在研磨盘上，暴露在外面的是晶圆本来的外延衬底，再将外延衬底的暴露面接触在研磨垫上，通过加入腐蚀性化学研磨剂，并同时旋转研磨盘和研磨垫，对外延衬底进行化学机械研磨，直到将外延衬底减薄到一定程度为止，然后采用有机溶剂浸泡临时支撑衬底，使得临时支撑衬底和外延衬底减薄后的半导体晶圆分离，恢复器件外延层薄膜平滑表面，最终获得外延衬底减薄后的半导体晶圆，由该晶圆上切割出来的器件，相比没有外延衬底减薄的器件，非器件功能层但又增加热阻的外延衬底厚度减少了，因此能够获得更好的导热性能。
这种技术的优点是工艺稳定且成本低廉，但缺点是只适用于化学物理性质较为容易处理的外延衬底材料，例如Si材料衬底，对于蓝宝石或SiC等物理化学性质都特别稳定的衬底材料来说，加工难度和成本会急剧上升，加工良率也难以保障。更进一步，由于外延衬底不能无限制的减薄，否则会对后续器件加工工艺带来很大的挑战，容易造成晶圆破碎导致器件良率降低，因此，采用这种技术加工出来的器件，仍然会有一定厚度的导热性欠佳的外延衬底材料存在，限制了器件导热能力提 升的空间。
激光剥离技术是在半导体晶圆的器件外延层平滑表面上蒸镀金属，例如Al、Ag、Ni、Cr、Au、Sn等，通过用金属共晶的方式将器件外延层平滑表面与Cu、AlN、Si、SiC等二次支撑衬底粘附并固定在一起，再通过一定功率的激光光束从外延衬底的背面(即没有器件外延层薄膜的那一面)照射到半导体器件外延层薄膜，激光的能量会造成外延衬底与器件外延层薄膜的连接处的半导体材料分解，使得器件外延层薄膜与外延衬底脱离，得到由导热性能良好的二次支撑衬底支撑的器件外延层薄膜，由于可以采用比原本半导体晶圆的外延衬底导热性能更好的二次支撑衬底，所以采用该技术得到的半导体晶圆在制备器件时可以获得更加优良的器件导热性能。
该技术的优点是能够将导热性能不好的外延衬底完全剥离，替换成导热性能良好的二次支撑衬底，同时由于二次支撑衬底的厚度可以按需调整，可以避免因后续器件加工工艺造成的晶圆破碎，因此可以在最大化去除导热欠佳的外延衬底材料的同时还能保证器件的加工良率。但缺点是由于需要采用激光照射，该技术只能适用于对照射的激光光束透明的外延衬底材料，对外延衬底材料的选取具有一定的局限性，同时由于激光照射分解器件外延层薄膜半导体材料时会产生大量的热量，这些热量也会对器件造成一定程度的损伤，有可能会导致器件性能的衰退甚至失效，从而影响器件的良率和可靠性。同时采用激光剥离技术也损失了由外延获得的半导体材料的平滑表面。转移衬底的理想结果是在保留半导体晶圆的器件外延层薄膜平滑表面的同时将导热欠佳的外延衬底直接替换成导热良好的二次支撑衬底材料，方便后续在器件外延层薄膜平滑表面上进行后续的器件加工，但该技术需要将二次支撑衬底一次性固定在半导体晶圆的器件外延层薄膜平滑表面上，而不能采用临时支撑衬底并在后续分离临时支撑衬底后恢复器件外延层薄膜平滑表面，其中一个原因就是该技术在剥离过程种产生的大量热量会使得临时支撑衬底脱落，所以只能采用永久固定的二次支撑衬底，因此获得的器件薄膜由于暴露面是器件外延层薄膜与外延衬底的接触面，所以无法对器件进行进一步的加工，这也限制了器件制作的工艺空间。
因此，目前GaN材料系列半导体薄膜剥离及转移衬底存在的主要问题是由于存在一定厚度的导热性欠佳的外延衬底材料存在，限制了器件导热能力提升的空间。
发明内容
为了解决现有技术中存在的上述问题，本发明提供了一种半导体薄膜剥离及转移衬底的方法。本发明要解决的技术问题通过以下技术方案实现：
一种半导体薄膜剥离及转移衬底的方法，包括：
制备半导体薄膜基底结构，所述半导体薄膜基底结构包括层叠的第一衬底层、若干籽晶结构和半导体薄膜层，且所述若干籽晶结构之间有孔洞且相互连通；
将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离；
将所述若干籽晶结构远离所述半导体薄膜层的一侧与第二衬底层结合，完成半导体薄膜的剥离及转移衬底的过程。
在本发明的一个实施例中，制备半导体薄膜基底结构，包括：
选取第一衬底层；
在所述第一衬底层上制备若干籽晶结构；
在所述若干籽晶结构上生长半导体薄膜层。
在本发明的一个实施例中，在所述第一衬底层上制备若干籽晶结构，包括：
在所述第一衬底层表面形成若干凸起结构和若干凹陷结构；
在具有所述凸起结构的所述第一衬底层的一侧生长具有平滑表面的外延层；
去除所述第一衬底层上每个凹陷结构上方的外延层直至暴露所述衬底层，并保留所述衬底层上每个凸起结构上方的至少一部分外延层，形成所述若干籽晶结构。
在本发明的一个实施例中，在所述衬底层上形成若干凸起结构和若干凹陷结构，包括：
在所述第一衬底层上生长掩膜层；
按照预设图形对所述掩膜层进行曝光、显影和刻蚀处理，暴露部分所述第一衬底层表面；
刻蚀暴露的所述第一衬底层表面，在所述第一衬底层表面形成所述若干凸起结构和所述若干凹陷结构。
在本发明的一个实施例中，将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离，包括：
利用化学腐蚀法将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离。
在本发明的一个实施例中，利用化学腐蚀法将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离，包括：
在所述半导体薄膜层形成若干第一开口区域，所述第一开口区域连通至所述孔洞；
在所述半导体薄膜层上方设置支撑衬底，且在所述支撑衬底上设置有连通第一开口区域的第二开口区域；
将腐蚀液体通过所述第一开口区域和所述第二开口区域注入所述若干籽晶结构间的孔洞中，使所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离。
在本发明的一个实施例中，在将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离之前，还包括：
在所述半导体薄膜层上生长第一功能层，所述第一功能层设置有第四开口区域，所述第四开口区域与所述第一开口区域连通。
在本发明的一个实施例中，利用化学腐蚀法将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离，包括：
将所述半导体薄膜层粘附在支撑衬底上；
在所述第一衬底层远离所述籽晶结构的一侧刻蚀若干第三开口区域，所述第三开口区域连通至所述孔洞；
将腐蚀液体通过所述若干第三开口区域注入所述若干籽晶结构间的孔洞中，使所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离。
在本发明的一个实施例中，在所述半导体薄膜层上生长第二功能层。
在本发明的一个实施例中，将所述若干籽晶结构远离所述半导体薄膜层的一侧与第二衬底层结合，完成半导体薄膜的剥离及转移衬底的过程，包括：
将所述若干籽晶结构远离所述半导体薄膜层的一侧粘附在所述第二衬底层上；
采用浸泡法将所述支撑衬底移除。
本发明的有益效果：
本发明针对GaN材料系列半导体薄膜剥离及转移衬底的问题，提出一种新的薄膜剥离及转移衬底的方法，该方法能够兼容各种外延衬底材料，同时既可以保留器件外延层薄膜(半导体薄膜层)的平滑表面，不影响在外延层薄膜上生长其它用于制备器件的功能层的后续加工工艺，又能将导热欠佳的第一衬底层替换成导热性能优良的第二衬底层，更进一步，该第二衬底层可以是导电衬底也可以 是绝缘衬底，更进一步的拓展了器件的应用空间。
以下将结合附图及实施例对本发明做进一步详细说明。
附图说明
图1是本发明实施例提供的一种半导体薄膜剥离及转移衬底的方法的流程示意图；
图2a～2l是本发明实施例提供的一种半导体薄膜剥离及转移衬底的方法的示意图；
图3是本发明实施例提供的一种图形化的第一衬底层的结构示意图；
图4a～4e是本发明实施例提供的另一种半导体薄膜剥离及转移衬底的方法的示意图；
图5a～5f是本发明实施例提供的又一种半导体薄膜剥离及转移衬底的方法的示意图；
图6a～6f是本发明实施例提供的再一种半导体薄膜剥离及转移衬底的方法的示意图。
具体实施方式
下面结合具体实施例对本发明做进一步详细的描述，但本发明的实施方式不限于此。
实施例一
请参见图1和图2a～2l，图1是本发明实施例提供的一种半导体薄膜剥离及转移衬底的方法的流程示意图，图2a～2l是本发明实施例提供的一种半导体薄膜剥离及转移衬底的方法的示意图。本实施例提供一种半导体薄膜剥离及转移衬底的方法，包括：
步骤1.1、制备半导体薄膜基底结构，该半导体薄膜基底结构包括依次层叠的第一衬底层、若干籽晶结构和半导体薄膜层，且若干籽晶结构之间有孔洞且相互连通。
步骤1.11、请参见图2a，选取第一衬底层101；
第一衬底层101例如可以包括硅(Si)、碳化硅(SiC)、金刚石、蓝宝石(Al 2O 3)、砷化镓(GaAs)、氮化铝(AlN)、氮化镓(GaN)、金属、金属氧化物、化合物半导体、玻璃、石英或复合材料等。衬底层101还可以包括具有特定晶相取向的单晶材料，例如m-面的SiC或蓝宝石、α-面的蓝宝石、γ-面的蓝宝石、c-面的蓝宝石。第一衬底层101还可以包括自由无掺杂、n型或p型掺杂材料组成的材料。
步骤1.12、在第一衬底层101上制备若干籽晶结构104，第一衬底层101上的籽晶结构104为相互独立的结构，且在籽晶结构之间存在孔洞且这些孔洞彼此之间相互连通，这些籽晶结构的材料例如可以为III-V族化合物半导体材料，具体可以为GaN系材料。
在本实施例中可以通过步骤1.121～步骤1.123在第一衬底层101上制备若干籽晶结构104，其中：
步骤1.121、在第一衬底层101表面形成若干凸起结构1011和若干凹陷结构1012；
具体地，本实施例通过图形化方式在第一衬底层101表面形成若干凸起结构1011和若干凹陷结构1012，凸起结构1011和凹陷结构1012可以呈周期性方式分布，也可以呈非周期性方式分布，为了简化和方便制作工艺，优选地凸起结构1011和凹陷结构1012呈周期性方式分布，且周期性的分布可以为完全周期均匀分布和/或局部单元均匀分布。
优选地，请参见图3，本实施例所获得的凸起结构1011的纵切面轮廓可以是三角形、方形、圆形、椭圆形、梯形或其组合，凸起结构1011的纵切面轮廓还可以为其它形状，本实施例对此不作具体限定。
进一步地，凸起结构1011顶部不具有任何平台区域，即凸起结构1011的纵切面轮廓中至少有一种轮廓的顶部轮廓线不是平行于水平面的直线。
具体地，在第一衬底层101上形成若干凸起结构1011和若干凹陷结构1012具体可以包括步骤1.1211～步骤1.1213，其中：
步骤1.1211、请参见图2b，在第一衬底层101上生长掩膜层102；
在第一衬底层101表面采用光刻胶涂布一层掩膜层102和/或沉积一层掩膜层102，当利用涂布工艺时，掩膜层102例如可以为光刻胶掩膜，当利用沉积工艺时，掩膜层102例如可以为SiO 2和/或Si 3N 4、金属氮化物和/或金属氧化物等。
步骤1.1212、请参见图2c，按照预设图形对掩膜层102进行曝光、显影和刻蚀处理，暴露部分第一衬底层101表面。
其中，预设图形为需要第一衬底层101所要表现的图形，可以通过曝光、显影和刻蚀工艺将所需的图形传递到掩膜层102上，从而暴露出部分第一衬底层101表面。
步骤1.1213、请参见图2d，刻蚀暴露的第一衬底层101，在第一衬底层101上形成若干凸起结构1011和若干凹陷结构1012。
另外，还可以通过其它方式在衬底层101上形成若干凸起结构1011和若干凹陷结构1012，例如按照预设周期和预设图形，利用沉积掩膜层和刻蚀方法在第一衬底层101上形成若干凸起结构1011和若干凹陷结构1012。
具体地，可以在第一衬底层101表面沉积一层绝缘材料(掩膜层)，该绝缘材料可以是Al 2O 3、SiO 2、Si 3N 4、光刻胶中的一种或其组合，通过刻蚀后形成周期分布(或非周期分布)的排列图形，通过再沉积再刻蚀的方法对其轮廓形状进行调整形成所需形状的凸起结构1011，沉积过程可以采用机械涂布、化学气相沉积方法或物理气相沉积方法，沉积材料可以是Al 2O 3、SiO 2、Si 3N 4、光刻胶中的一种或其组合。
在本实施例中，掩膜层可以选择去除也可以不去除，此时掩膜层下方所保留的GaN系材料就是在第一衬底层的凸起结构上方通过横向生长所获得的较高质量的籽晶结构。
步骤1.122、请参见图2e，在具有凸起结构1011的第一衬底层101的一侧生长一层具有平滑表面的外延层103；
具体地，本实施例在具有凸起结构1011的第一衬底层101的一侧开始生长外延层材料，外延层材料首先在凹陷结构1012部分的第一衬底层101表面开始生长，直至外延层材料完全覆盖第一衬底层101的凸起结构1011部分后形成具有平滑表面的外延层103。
进一步地，本实施例可以通过采用化学气相沉积法或氢化物气相外延生长法在具有凸起结构1011的第一衬底层101的一侧进行外延生长，以得到具有平滑表面的外延层103，本实施例不对外延层103的工艺参数进行具体限定，只要在具有凸起结构1011的第一衬底层101的一侧能够生长具有平滑表面的外延层103即可满足要求。应理解的是，本领域技术人员可以通过控制外延层103的工艺条件，以及选取合适的凸起结构1011和凹陷结构1012的图形形状和尺寸进行外延生长。
在本实施例中，化学气相沉积例如可以包括MOCVD(金属有机化合物化学气相沉淀)或RPCVD(减压化学气相沉积)。
在本实施例中，外延层103的材料可以为III-V族化合物半导体材料，例如具体可以为GaN系材料。
进一步地，GaN系材料例如可以包括GaN、BN、Al xGa yIn1- x- yN(0≤x≤1，0≤y≤1，0≤x+y≤1)合金材料、InP、GaAs、Al xGa yIn1- x- yP(0≤x≤1，0≤y≤1，0≤x+y≤1)合金材料和Al xGa yIn1- x- yAs(0≤x≤1，0≤y≤1，0≤x+y≤1)合金材料。
进一步地，GaN系材料可以是无掺杂的、n型或p型掺杂的材料。
进一步地，GaN系材料的生长方法可以用单独掺杂的或无掺杂的材料，或用无掺杂和掺杂步骤的组合，或采用n掺杂和p掺杂的组合来沉积。
步骤1.123、请参见图2f，去除第一衬底层101上每个凹陷结构1012上方的外延层103直至暴露第一衬底层101，并保留第一衬底层101上每个凸起结构1011上方的至少一部分外延层103，形成若干籽晶结构104，该籽晶结构即为位于凸起结构1011上方的外延层材料；
具体地，本实施例通过将每个凹陷结构1012上方对应的外延层103去除掉，直至完全暴露第一衬底层101的表面为止，且需保证在所暴露的第一衬底层101表面没有外延层材料的残留，同时保留每个凸起结构1011上方对应的外延层103，每个凸起结构1011上方对应所保留的外延层103即作为一个籽晶结构104，且每个凸起结构1011上方所形成的籽晶结构104均是独立存在的，即所有籽晶结构104彼此之间相互独立的存在于凸起结构1011上方，在本实施例中，凸起结构1011上方的外延层103部分既包括凸起结构1011的顶部区域也包括凸起结构1011的侧边区域，其中，侧边区域大小的选取可以根据实际需求进行选择，本实施例对此不作具体限定。在本实施例中，因凹陷结构1012上方对应的外延层103部分因与第一衬底层101为异质材料，所以会出现晶格失配和热失配影响较大、缺陷较多的问题，因此本实施例将所暴露的凹陷结构1012上方对应的外延层103部分去除。
每个籽晶结构的平面面积的大小为0.01平方微米至300000平方微米，优选的为1平方微米至100平方微米，更优选的为1平方微米至30平方微米。
本实施例提出了一种新的图形衬底的制备方法，虽然本实施例提出的图形衬底是基于异质衬底材料，但该图形衬底的图形表面已经不再是异质衬底材料，而是转变成了呈现相互孤立的小岛分布形态的籽晶结构，进一步的，该图形衬底的籽晶结构之间的间隔区是具备一定深度和宽度的异质衬底材料的凹陷，并且这些籽晶结构都是通过横向外延附生方法(ELOG)生长获得的晶体质量较高的GaN系材料的籽晶结构，基于这些籽晶结构形成的图形衬底进行后续的材料生长可以获得高质量的材料薄膜及器件。
步骤1.13、请参见图2g，在若干籽晶结构104上生长半导体薄膜层105；
具体地，通过化学气相沉积法(例如金属有机化合物化学气相沉淀法(MOCVD)、减压化学气相沉积法(RPCVD)等)或气相外延生长法(例如有机金属化合物气相外延法(MOVPE)、氢化物气相外延生长法(HVPE))或分子束外延成长法(MBE)等方法继续在籽晶结构104上生长半导体薄膜层材料，直至得到具有平滑表面的半导体薄膜层105，优选的该半导体薄膜层105与籽晶结构104的材料相同，例如均为GaN系材料。该半导体薄膜层105是在籽晶结构104上生长而成，由于籽晶结构104与第一衬底层101间存在大量孔洞(即凹陷结构1012)，使得半导体薄膜层105可以几乎不受异质第一衬底层101的晶格失配和热失配的影响，具有类似在同质晶体衬底上生长的材料的特质，可以用于后续继续生长器件的功能层，为这些器件结构所需的功能层提供高质量的第一外延层基础。
在本实施例中，半导体薄膜层105的材料可以为III-V族化合物半导体材料，例如具体可以为GaN系材料。进一步地，GaN系材料例如可以包括GaN、BN、Al xGa yIn1- x- yN(0≤x≤1，0≤y≤1，0≤x+y≤1)合金材料、InP、GaAs、Al xGa yIn1- x- yP(0≤x≤1，0≤y≤1，0≤x+y≤1)合金材料和Al xGa yIn1- x- yAs(0≤x≤1，0≤y≤1，0≤x+y≤1)合金材料。
优选地，半导体薄膜层105与籽晶结构104材料相同。
由于利用实施例一的制备方法所制备的图形衬底的图形表面转变成了呈现相互孤立小岛分布形态的GaN系材料的籽晶结构，因此通过ELOG工艺生长使得这些籽晶结构合拢形成的第一单晶薄膜层具有较高的质量。进一步的，由于该图形衬底的籽晶结构之间的间隔区是在衬底层上形成的，具备一定的深度和宽度，因此在制备半导体薄膜层时异质衬底层(第一衬底层)的凹陷结构不会生长GaN系材料，籽晶结构之间通过横向外延附生方法合拢的过程在异质衬底层的凹陷结构的上方完成，因 此通过籽晶结构之间的横向外延附生方法获得的具有平滑表面的半导体薄膜层与异质衬底层之间会留有大量相互联通的孔洞，由于这些孔洞的存在，不仅可以极大程度的减少由于异质衬底层与GaN系材料之间的晶格失配和热失配所带来的半导体薄膜层的缺陷问题，从而提高半导体薄膜层的结晶质量，同时还可以将半导体薄膜层从异质衬底层上进行剥离提供有利条件。
步骤1.2、将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离；
在本实施例中，可以利用化学腐蚀法将若干籽晶结构和半导体薄膜层从第一衬底层上剥离，通过将籽晶结构和半导体薄膜层从第一衬底层上进行剥离，可以去除因异质衬底层导致的导热性差的问题。
具体地，将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离可以具体通过步骤1.21～步骤1.23实现，其中：
步骤1.21，请参见图2h，在半导体薄膜层105形成若干第一开口区域106，第一开口区域106连通至孔洞(即凹陷结构1012的位置)。
在所形成的平滑的半导体薄膜层105与第一衬底层101之间存在若干相互连通的孔洞，则在半导体薄膜层105形成第一开口区域106，则相互连通的孔洞可以通过第一开口区域106与外界连通，应该理解的是，本实施例对第一开口区域106的形状、位置和数量不做具体要求，只要其能满足与孔洞相连通即可。
进一步地，第一开口区域106可以是通过控制籽晶结构分布的间距结合生长工艺自然形成的开口区域，也可以是通过干法刻蚀或湿法刻蚀得到的开口区域，还可以是通过溶剂浸泡溶解方法得到的开口区域。第一开口区域106可以是在半导体薄膜层105的平滑表面上，也可以是在半导体薄膜层105的边缘上，或者在半导体薄膜层105的平滑表面和边缘上都有。
步骤1.22，请参见图2i，将半导体薄膜层105粘附在支撑衬底107上，且在支撑衬底107上设置有连通第一开口区域106的第二开口区域108；
具体地，将半导体薄膜层105通过黏附剂粘附在支撑衬底107上，在真空环境中抽走黏附剂中的气泡，同时支撑衬底107的第二开口区域108连通第一开口区域106，应该理解的是，本实施例对第二开口区域108的形状、位置和数量不做具体要求，只要其能满足与孔洞相连通即可，并且该第二开口区域108可以是在加工支撑衬底107时所形成的结构，从而将第一开口区域106暴露出来，也可以是在将支撑衬底107粘附到半导体薄膜层105上之后，通过干法刻蚀和/或湿法刻蚀，在远离半导体薄膜层105的支撑衬底107的一侧刻蚀出的开口区域，从而使得半导体薄膜层105与第一衬底层101之间的若干相互连通的孔洞可以通过第二开口区域108和外界连通。
优选地，支撑衬底107的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
优选地，黏附剂可以是有机树脂、硅胶、玻璃胶、高分子黏合剂其中的一种或几种的组合。
步骤1.23，请参见图2j，将腐蚀液体通过第一开口区域106和第二开口区域108注入若干籽晶结构104间的孔洞中，使若干籽晶结构104和半导体薄膜层105从第一衬底层101剥离。
具体地，将化学腐蚀液体通过第一开口区域106和第二开口区域108注入若干籽晶结构104之间的孔洞中，通过腐蚀籽晶结构104与第一衬底层101之间连接的半导体材料，将籽晶结构104和半导体薄膜层105从第一衬底层101剥离。
优选地，化学腐蚀液体可以是磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，腐蚀过程可以是单种腐蚀液腐蚀和/或多种类型的腐蚀液 按照一定的顺序交替和/或周期交替进行腐蚀。
另外，在将籽晶结构104和半导体薄膜层105从第一衬底层101剥离的过程，可以是对第一衬底层101进行加热，也可以对支撑衬底107进行加热，还可以是同时对第一衬底层101和支撑衬底107进行加热。
步骤1.3、将若干籽晶结构104远离半导体薄膜层105的一侧与第二衬底层109结合；
在本实施例中，通过上述经化学腐蚀剥离的半导体薄膜层105和籽晶结构104与第二衬底层109结合，形成同时具有支撑衬底108和第二衬底层109的半导体器件；
优选地，第二衬底层109的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
具体地，步骤1.3可以具体通过步骤1.31～步骤1.32实现，其中：
步骤1.31、请参见图2k，将若干籽晶结构104远离半导体薄膜层105的一侧粘附在第二衬底层109上；
本实施例将籽晶结构104与第二衬底层109结合的方式优选的可以是通过蒸镀或溅射的方法在籽晶结构104与第二衬底层109的连接面上形成一层金属，然后在该第二衬底层材料上电镀一层金属作为第二衬底层109，或者也可以在金属面上再粘合一个衬底形成复合的第二衬底层109，或者也可以在连接面的籽晶结构104上直接粘合第二衬底层109。
步骤1.32、请参见图2l，采用浸泡法将支撑衬底108从半导体薄膜层105上移除，完成半导体薄膜的剥离及转移衬底的过程。
采用溶剂浸泡上述同时具有支撑衬底108和第二衬底层109的半导体薄膜层105，从而将黏附剂溶解，移除支撑衬底108以恢复平滑的半导体薄膜层105，从而获得半导体薄膜剥离及转移衬底后的具有第二衬底层109的半导体薄膜。将支撑衬底108移除的过程，可以是对第二衬底层109进行加热，也可以对支撑衬底108进行加热，或同时加热第二衬底层109和支撑衬底108。
在实际使用时，可以将具有开口区域的半导体薄膜层部分去除掉，保留其余没有开口区域的部分，进一步进行所需器件的制备或者进行使用。
溶剂可以是有机溶剂、磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，溶解过程可以是单种溶剂和/或多种类型的溶剂按照一定的顺序交替和/或周期交替进行。
本发明针对GaN材料系列半导体薄膜剥离及转移衬底的问题，提出一种新的薄膜剥离及转移衬底的方法，该方法能够兼容各种外延衬底材料，同时既可以保留半导体薄膜层的平滑表面，不影响在半导体薄膜层上生长其它用于制备器件的功能层的后续加工工艺，又能将导热欠佳的第一衬底层替换成导热性能优良的第二衬底层，更进一步，该第二衬底层可以是导电衬底也可以是绝缘衬底，更进一步的拓展了器件的应用空间。另外，半导体薄膜层的剥离过程并不产生大量的热量，因此不会对器件造成任何伤害。因此采用该方法对GaN材料系列半导体器件的半导体薄膜层进行薄膜剥离及转移衬底后可以将导热欠佳的第一衬底层直接替换成导热良好的第二衬底层，使得由此方法制备的半导体器件具有良好的散热能力，更适合于各种大功率的应用场景。更进一步地，由于本实施例的方法可以在第二衬底层与GaN材料系列的半导体薄膜层之间产生大量孔洞，有利于降低GaN材料系列的半导体薄膜层的缺陷密度，提高GaN材料系列的半导体薄膜层的晶体质量，因此该方法还可以进一步提高GaN材料系列半导体器件的性能。
实施例二
本发明在实施例一的基础上还提出另一种剥离第一衬底层的方法。通过实施例一中的步骤1.1得到半导体薄膜基底结构，之后利用本实施例提供的剥离第一衬底层的方法将若干籽晶结构和半导体薄膜层从第一衬底层剥离。请参见图4a～4e，图4a～4e是本发明实施例提供的一种半导体薄膜剥离及转移衬底的方法的示意图，本实施例所提供的剥离第一衬底层的方法可以包括：
步骤2.1、将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离；
在本实施例中，可以利用化学腐蚀法将若干籽晶结构104和半导体薄膜层105从所述第一衬底层101上剥离，通过将籽晶结构104和半导体薄膜层105从第一衬底层上剥离，可以去除因异质衬底层导致的导热性差的问题。
具体地，将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离可以具体通过步骤2.11～步骤2.13实现，其中：
步骤2.11，请参见图4a，将半导体薄膜层105粘附在支撑衬底107上。
具体地，将半导体薄膜层105通过黏附剂粘附在支撑衬底107上，在真空环境中抽走黏附剂中的气泡。
优选地，支撑衬底107的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
优选地，黏附剂可以是有机树脂、硅胶、玻璃胶、高分子黏合剂其中的一种或几种的组合。
步骤2.12，请参见图4b，在第一衬底层101远离籽晶结构的一侧刻蚀若干第三开口区域，所述第三开口区域连通至所述孔洞；
在所形成的平滑的半导体薄膜层105与第一衬底层101之间存在若干相互连通的孔洞，则在第一衬底层10上形成若干第三开口区域110，则相互连通的孔洞可以通过第三开口区域110与外界连通，第三开口区域110可以通过干法刻蚀和/或湿法刻蚀，在远离半导体薄膜层105的第一衬底层101的一侧刻蚀出的开口区域，从而使得半导体薄膜层105与第一衬底层101之间的若干相互连通的孔洞可以通过第三开口区域110和外界连通。应该理解的是，本实施例对第三开口区域110的形状、位置和数量不做具体要求，只要其能满足与孔洞相连通即可。
步骤2.13，请参见图4c，将腐蚀液体通过若干第三开口区域110注入若干籽晶结构104间的孔洞中，使若干籽晶结构104和半导体薄膜层105从第一衬底层101剥离；
具体地，将化学腐蚀液体通过第三开口区域110注入若干籽晶结构104之间的孔洞中，通过腐蚀籽晶结构104与第一衬底层101之间连接的半导体材料，将籽晶结构104和半导体薄膜层105从第一衬底层101剥离。
优选地，化学腐蚀液体可以是磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，腐蚀过程可以是单种腐蚀液腐蚀和/或多种类型的腐蚀液按照一定的顺序交替和/或周期交替进行腐蚀。
步骤2.2、将若干籽晶结构104远离半导体薄膜层105的一侧与第二衬底层109结合；
在本实施例中，通过上述经化学腐蚀剥离的半导体薄膜层105和籽晶结构104与第二衬底层109结合，形成同时具有支撑衬底108和第二衬底层109的半导体器件；
优选地，第二衬底层109的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
具体地，步骤2.2可以具体通过步骤2.21～步骤2.22实现，其中：
步骤2.21、请参见图4d，将若干籽晶结构104远离半导体薄膜层105的一侧粘附在第二衬底层109 上；
本实施例将籽晶结构104与第二衬底层109结合的方式优选地可以是通过蒸镀或溅射的方法在籽晶结构104与第二衬底层109的连接面上形成一层金属，然后在该第二衬底层材料上电镀一层金属作为第二衬底层109，或者也可以在金属面上再粘合一个衬底形成复合的第二衬底层109，或者也可以在连接面的籽晶结构104上直接粘合第二衬底层109。
步骤2.22、请参见图4e，采用浸泡法将支撑衬底108从半导体薄膜层105上移除，完成半导体薄膜的剥离及转移衬底的过程。
采用溶剂浸泡上述同时具有支撑衬底108和第二衬底层109的半导体薄膜层105，从而将黏附剂溶解，移除支撑衬底108以恢复平滑的半导体薄膜层105，从而获得半导体薄膜剥离及转移衬底后的具有第二衬底层109的半导体薄膜。将支撑衬底108移除的过程，可以是对第二衬底层109进行加热，也可以对支撑衬底108进行加热，或同时加热第二衬底层109和支撑衬底108。
溶剂可以是有机溶剂、磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，溶解过程可以是单种溶剂和/或多种类型的溶剂按照一定的顺序交替和/或周期交替进行。
在实际使用时，可以将具有开口区域的第二衬底层部分去除掉，保留其余没有开口区域的部分，进一步进行所需器件的制备或者进行使用。
本发明创新性地提出将图形化衬底和横向外延附生方法(ELOG)的技术优点兼容在一起，可以通过在半导体薄膜层与第一衬底层之间的若干相互连通的孔洞，最终实现将导热欠佳的第一衬底层替换成导热性能优良的第二衬底层，同时保留半导体薄膜层的平滑表面，既不影响半导体薄膜层的后续工艺加工，又能兼容各种外延衬底材料。通过本实施例的方法所制作的半导体器件，整个器件的半导体薄膜层剥离过程并不产生大量的热量，因此不会对器件造成任何伤害，提高了器件的良率和可靠性，同时由本实施例的方法所制备的半导体器件具有良好的散热能力，更适合于各种大功率的应用场景，更进一步的，第二衬底层可以是导电衬底也可以是绝缘衬底，能够进一步的拓展器件的运用空间，具有巨大的商业价值。通过本实施例所获得的GaN材料系列的半导体薄膜层，可以基本摆脱因衬底的晶格失配和热失配带来的影响，将其所造成的缺陷影响以及应力影响降到最低，由此GaN材料系列的半导体薄膜层的质量可以与在同质单晶衬底上制备的材料质量接近，因此能够大大降低基于GaN材料系列的半导体材料的研究与应用的成本，这个衍生应用同样具有巨大的研究、应用价值以及商业价值。
实施例三
本发明在实施例一的基础上还提出一种基于器件的半导体薄膜剥离及转移衬底的方法。通过实施例一中的步骤1.1得到半导体薄膜基底结构，之后在实施例一所得到的半导体薄膜基底结构的半导体薄膜层上生长功能层，请参见图5a～5f，图5a～5f是本发明实施例提供的又一种半导体薄膜剥离及转移衬底的方法的示意图，具体地在半导体薄膜层上生长功能层的方法包括：
步骤3.1、请参见图5a，在半导体薄膜层105上生长第一功能层111，第一功能层111设置有第四开口区域，第四开口区域与第一开口区域连通；
在本实施例中，第一功能层111可以为用于形成光电器件和/或功率器件所需要的n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层中的至少一种，即第一功能层111可以为n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层中的任意一种结构，也可以为n型掺杂的半导体材料层、p型掺杂的 半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层多种结构的组合，以多种结构的组合进行举例说明，例如，在半导体薄膜层105上依次生长n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层，从而形成光电器件和/或功率器件，又例如，可以在半导体薄膜层105上依次生长n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层，从而形成光电器件和/或功率器件，再例如，可以在半导体薄膜层105上依次生长n型掺杂的半导体材料层、p型掺杂的半导体材料层、超晶格层，从而形成光电器件和/或功率器件，对于多种结构的组合，本实施例不对n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层在半导体薄膜层105上的生长顺序做具体要求，本领域技术人员可以根据实际需求和应用对其进行调整。另外，第一功能层111还可以为形成光电器件和/或功率器件的其它材料层，本实施例对此不作具体限定。第一功能层111的生长工艺例如可以为MOCVD，也可以为其它常用的生长工艺，本实施对此不作具体限定。
步骤3.2、将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离；
在本实施例中，可以利用化学腐蚀法将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离，通过将籽晶结构104和半导体薄膜层105从第一衬底层101上剥离，可以去除因异质衬底层导致的导热性差的问题。
具体地，将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离可以具体通过步骤3.21～步骤3.23实现，其中：
步骤3.21，请参见图5b，在第一功能层111上形成若干第四开口区域112，第四开口区域112与第一开口区域106相互连通。
在所形成的平滑的半导体薄膜层105与第一衬底层101之间存在若干相互连通的孔洞，则在第一功能层111上形成第四开口区域112，则相互连通的孔洞可以通过第一开口区域106和第四开口区域112与外界连通，应该理解的是，本实施例对第四开口区域112的形状、位置和数量不做具体要求，只要其能满足与第一开口区域106相连通即可。
进一步地，第四开口区域112可以是通过控制籽晶结构分布的间距结合生长工艺自然形成的开口区域，也可以是通过干法刻蚀或湿法刻蚀得到的开口区域，还可以是通过溶剂浸泡溶解方法得到的开口区域。第四开口区域112可以是第一功能层111的表面上，也可以是在第一功能层111的边缘上，或者在第一功能层111的表面和边缘上都有。
步骤3.22，请参见图5c，将第一功能层111粘附在支撑衬底107上，且在支撑衬底107上设置有连通第四开口区域112的第二开口区域108；
具体地，将第一功能层111通过黏附剂粘附在支撑衬底107上，在真空环境中抽走黏附剂中的气泡，同时支撑衬底107的第二开口区域108连通第四开口区域112，应该理解的是，本实施例对第二开口区域108的形状、位置和数量不做具体要求，只要其能满足与第四开口区域112相连通即可，并且该第二开口区域108可以是在加工支撑衬底107时所形成的结构，从而将第一开口区域106暴露出来，也可以是在将支撑衬底107粘附到第一功能层111上之后，通过干法刻蚀和/或湿法刻蚀，在远离半导体薄膜层105的支撑衬底107的一侧刻蚀出的开口区域，从而使得半导体薄膜层105与第一衬底层101之间的若干相互连通的孔洞可以通过第二开口区域108和外界连通。
优选地，支撑衬底107的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
优选地，黏附剂可以是有机树脂、硅胶、玻璃胶、高分子黏合剂其中的一种或几种的组合。
步骤3.23，请参见图5d，将腐蚀液体通过第一开口区域106、第二开口区域108和第四开口区域112注入若干籽晶结构104间的孔洞中，使若干籽晶结构104和半导体薄膜层105从第一衬底层101剥离。
具体地，将化学腐蚀液体通过第一开口区域106、第二开口区域108和第四开口区域112注入若干籽晶结构104间的孔洞中，通过腐蚀籽晶结构104与第一衬底层101之间连接的半导体材料，将籽晶结构104和半导体薄膜层105从第一衬底层101剥离。
优选地，化学腐蚀液体可以是磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，腐蚀过程可以是单种腐蚀液腐蚀和/或多种类型的腐蚀液按照一定的顺序交替和/或周期交替进行腐蚀。
另外，将籽晶结构104和半导体薄膜层105从第一衬底层101剥离的过程，可以是对第一衬底层101进行加热，也可以是对支撑衬底107进行加热，还可以是同时对第一衬底层101和支撑衬底107进行加热。
步骤3.3、将若干籽晶结构104远离半导体薄膜层105的一侧与第二衬底层109结合；
在本实施例中，通过上述经化学腐蚀剥离的半导体薄膜层105和籽晶结构104与第二衬底层109结合，形成同时具有支撑衬底108和第二衬底层109的半导体器件；
优选地，第二衬底层109的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
具体地，步骤3.3可以具体通过步骤3.31～步骤3.32实现，其中：
步骤3.31、请参见图5e，将若干籽晶结构104远离半导体薄膜层105的一侧粘附在第二衬底层109上；
本实施例将籽晶结构104与第二衬底层109结合的方式优选地可以是通过蒸镀或溅射的方法在籽晶结构104与第二衬底层109的连接面上形成一层金属，然后在该第二衬底层材料上电镀一层金属作为第二衬底层109，或者也可以在金属面上再粘合一个衬底形成复合的第二衬底层109，或者也可以在连接面的籽晶结构104上直接粘合第二衬底层109。
步骤3.32、请参见图5f，采用浸泡法将支撑衬底108从半导体薄膜层105上移除，完成半导体薄膜的剥离及转移衬底的过程。
采用溶剂浸泡上述同时具有支撑衬底108和第二衬底层109的半导体薄膜层105，从而将黏附剂溶解，移除支撑衬底108以恢复平滑的半导体薄膜层105，从而获得半导体薄膜剥离及转移衬底后的具有第二衬底层109的半导体薄膜。将支撑衬底108移除的过程，可以是对第二衬底层109进行加热，也可以是对支撑衬底108进行加热，或同时加热第二衬底层109和支撑衬底108。
溶剂可以是有机溶剂、磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，溶解过程可以是所述单种溶剂和/或多种类型的溶剂按照一定的顺序交替和/或周期交替进行。
在实际使用时，可以将具有开口区域的半导体薄膜层部分和功能层部分去除掉，保留其余没有开口区域的部分，进一步进行所需器件的制备或者进行使用。
本发明针对GaN材料系列半导体薄膜剥离及转移衬底的问题，提出一种新的薄膜剥离及转移衬底的方法，该方法能够兼容各种外延衬底材料，同时既可以保留器件半导体薄膜层的平滑表面，不影响在半导体薄膜层上生长其它用于制备器件的功能层的后续加工工艺，又能将导热欠佳的第一衬底层替换成导热性能优良的第二衬底层，更进一步，该第二衬底层可以是导电衬底也可以是绝缘衬底，更进一步的拓展了器件的应用空间。另外，半导体薄膜层的剥离过程并不产生大量的热量，因 此不会对器件造成任何伤害。因此采用该方法对GaN材料系列半导体器件的半导体薄膜层进行薄膜剥离及转移衬底后可以将导热欠佳的第一衬底层直接替换成导热良好的第二衬底层，使得由此方法制备的半导体器件具有良好的散热能力，更适合于各种大功率的应用场景。更进一步地，由于本实施例的方法可以在第二衬底层与GaN材料系列的半导体薄膜层之间产生大量孔洞，有利于降低GaN材料系列的半导体薄膜层的缺陷密度，提高GaN材料系列的半导体薄膜层的晶体质量，因此该方法还可以进一步提高GaN材料系列半导体器件的性能。
实施例四
本发明在实施例一的基础上还提出另一种器件的制备方法。通过实施例一中的步骤1.1得到半导体薄膜基底结构，之后在实施例一所得到的半导体薄膜基底结构的半导体薄膜层上生长功能层，请参见图6a～6f，图6a～6f是本发明实施例提供的再一种半导体薄膜剥离及转移衬底的方法的示意图，具体地在半导体薄膜层上生长功能层的方法包括：
步骤4.1、请参见图6a，在半导体薄膜层105上生长第二功能层113；
在本实施例中，第二功能层113可以为用于形成光电器件和/或功率器件所需要的n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层中的至少一种，即功能层111可以为n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层中的任意一种结构，也可以为n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层多种结构的组合，以多种结构的组合进行举例说明，例如，在半导体薄膜层105上依次生长n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层，从而形成光电器件和/或功率器件，又例如，可以在半导体薄膜层105上依次生长n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层，从而形成光电器件和/或功率器件，再例如，可以在半导体薄膜层105上依次生长n型掺杂的半导体材料层、p型掺杂的半导体材料层、超晶格层，从而形成光电器件和/或功率器件，对于多种结构的组合，本实施例不对n型掺杂的半导体材料层、p型掺杂的半导体材料层、非有意掺杂的半导体材料层、超晶格层和量子阱层在半导体薄膜层105上的生长顺序做具体要求，本领域技术人员可以根据实际需求和应用对其进行调整。另外，第二功能层113还可以为形成光电器件和/或功率器件的其它材料层，本实施例对此不作具体限定。第二功能层113的生长工艺例如可以为MOCVD，也可以为其它常用的生长工艺，本实施对此不作具体限定。
步骤4.2、将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离；
在本实施例中，可以利用化学腐蚀法将若干籽晶结构和半导体薄膜层从第一衬底层剥离，通过将籽晶结构和半导体薄膜层从第一衬底层上剥离，可以去除因异质衬底层导致的导热性差的问题。
具体地，将若干籽晶结构104和半导体薄膜层105从第一衬底层101上剥离可以具体通过步骤4.21～步骤4.23实现，其中：
步骤4.21，请参见图6b，将第二功能层113粘附在支撑衬底107上。
具体地，将第二功能层113通过黏附剂粘附在支撑衬底107上，在真空环境中抽走黏附剂中的气泡。
优选地，支撑衬底107的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
优选地，黏附剂可以是有机树脂、硅胶、玻璃胶、高分子黏合剂其中的一种或几种的组合。
步骤2.12，请参见图6c，在第一衬底层101远离籽晶结构的一侧刻蚀若干第三开口区域110， 第三开口区域110连通至孔洞；
在所形成的平滑的半导体薄膜层105与第一衬底层101之间存在若干相互连通的孔洞，在第一衬底层10上形成若干第三开口区域110，则相互连通的孔洞可以通过第三开口区域110与外界连通，第三开口区域110可以通过干法刻蚀和/或湿法刻蚀，在远离半导体薄膜层105的第一衬底层101的一侧刻蚀出的开口区域，从而使得半导体薄膜层105与第一衬底层101之间的若干相互连通的孔洞可以通过第三开口区域110和外界连通。应该理解的是，本实施例对第三开口区域110的形状、位置和数量不做具体要求，只要其能满足与孔洞相连通即可。
步骤2.13，请参见图6d，将腐蚀液体通过若干第三开口区域110注入若干籽晶结构104间的孔洞中，使若干籽晶结构104和半导体薄膜层105从第一衬底层101剥离；
将腐蚀液体通过第三开口区域110注入若干籽晶结构104间的孔洞中，使若干籽晶结构104和半导体薄膜层105从第一衬底层101剥离。
具体地，将化学腐蚀液体通过第三开口区域110注入若干籽晶结构104间的孔洞中，通过腐蚀籽晶结构104与第一衬底层101之间连接的半导体材料，将籽晶结构104和半导体薄膜层105从第一衬底层101剥离。
优选地，化学腐蚀液体可以是磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，腐蚀过程可以是单种腐蚀液腐蚀和/或多种类型的腐蚀液按照一定的顺序交替和/或周期交替进行腐蚀。
步骤2.2、将若干籽晶结构104远离半导体薄膜层105的一侧与第二衬底层109结合；
在本实施例中，通过上述经化学腐蚀剥离的半导体薄膜层105和籽晶结构104与第二衬底层109结合，形成同时具有支撑衬底108和第二衬底层109的半导体器件；
优选地，第二衬底层109的材料可以是Cu、AlN、玻璃、Si、SiC、金属、金属氮化物、金属氧化物、ZnO、塑料、高分子化合物其中的一种或几种的组合。
具体地，步骤2.2可以具体通过步骤2.21～步骤2.22实现，其中：
步骤2.21、请参见图6e，将若干籽晶结构104远离半导体薄膜层105的一侧粘附在第二衬底层109上；
本实施例将籽晶结构104与第二衬底层109结合的方式优选地可以是通过蒸镀或溅射的方法在籽晶结构104与第二衬底层109的连接面上形成一层金属，然后在该第二衬底层材料上电镀一层金属作为第二衬底层109，或者也可以在金属面上再粘合一个衬底形成复合的第二衬底层109，或者也可以在连接面的籽晶结构104上直接粘合第二衬底层109。
步骤2.22、请参见图6f，采用浸泡法将支撑衬底108从第二功能层113上移除，完成半导体薄膜的剥离及转移衬底的过程。
采用溶剂浸泡上述同时将具有支撑衬底108和第二衬底层109的半导体薄膜层105，从而将黏附剂溶解，移除支撑衬底108以恢复第二功能层113，从而获得半导体薄膜剥离及转移衬底后的具有第二衬底层109的半导体薄膜器件。将支撑衬底108移除的过程，可以是对第二衬底层109进行加热，也可以是对支撑衬底108进行加热，或同时加热第二衬底层109和支撑衬底108。
溶剂可以是有机溶剂、磷酸、硝酸、双氧水、硫酸、氢氧化钾、氢氧化钠、氨水、酸性溶液、碱性溶液其中的一种或多种的组合，溶解过程可以是单种溶剂和/或多种类型的溶剂按照一定的顺序交替和/或周期交替进行。
在实际使用时，在可以将具有第三开口区域的第二衬底层部分去除掉，保留其余没有第三开口 区域的部分，进一步进行所需器件的制备或者进行使用。
本发明针对GaN材料系列半导体薄膜剥离及转移衬底的问题，提出一种新的薄膜剥离及转移衬底的方法，该方法能够兼容各种外延衬底材料，同时既可以保留器件半导体薄膜层的平滑表面，不影响在半导体薄膜层上生长其它用于制备器件的功能层的后续加工工艺，又能将导热欠佳的第一衬底层替换成导热性能优良的第二衬底层，更进一步，该第二衬底层可以是导电衬底也可以是绝缘衬底，更进一步的拓展了器件的应用空间。另外，半导体薄膜层的剥离过程并不产生大量的热量，因此不会对器件造成任何伤害。因此采用该方法对GaN材料系列半导体器件的半导体薄膜层进行薄膜剥离及转移衬底后可以将导热欠佳的第一衬底层直接替换成导热良好的第二衬底层，使得由此方法制备的半导体器件具有良好的散热能力，更适合于各种大功率的应用场景。更进一步地，由于本实施例的方法可以在第二衬底层与GaN材料系列的半导体薄膜层之间产生大量孔洞，有利于降低GaN材料系列的半导体薄膜层的缺陷密度，提高GaN材料系列的半导体薄膜层的晶体质量，因此该方法还可以进一步提高GaN材料系列半导体器件的性能。
在本发明的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。此外，本领域的技术人员可以将本说明书中描述的不同实施例或示例进行接合和组合。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (10)

  1. 一种半导体薄膜剥离及转移衬底的方法，其特征在于，包括：
    制备半导体薄膜基底结构，所述半导体薄膜基底结构包括层叠的第一衬底层、若干籽晶结构和半导体薄膜层，且所述若干籽晶结构之间有孔洞且相互连通；
    将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离；
    将所述若干籽晶结构远离所述半导体薄膜层的一侧与第二衬底层结合。
  2. 根据权利要求1所述的半导体薄膜剥离及转移衬底的方法，其特征在于，制备半导体薄膜基底结构，包括：
    选取第一衬底层；
    在所述第一衬底层上制备若干籽晶结构；
    在所述若干籽晶结构上生长半导体薄膜层。
  3. 根据权利要求2所述的半导体薄膜剥离及转移衬底的方法，其特征在于，在所述第一衬底层上制备若干籽晶结构，包括：
    在所述第一衬底层表面形成若干凸起结构和若干凹陷结构；
    在具有所述凸起结构的所述第一衬底层的一侧生长具有平滑表面的外延层；
    去除所述第一衬底层上每个凹陷结构上方的外延层直至暴露所述衬底层，并保留所述衬底层上每个凸起结构上方的至少一部分外延层，形成所述若干籽晶结构。
  4. 根据权利要求3所述的半导体薄膜剥离及转移衬底的方法，其特征在于，在所述第一衬底层上形成若干凸起结构和若干凹陷结构，包括：
    在所述第一衬底层上生长掩膜层；
    按照预设图形对所述掩膜层进行曝光、显影和刻蚀处理，暴露部分所述第一衬底层表面；
    刻蚀暴露的所述第一衬底层表面，在所述第一衬底层表面形成所述若干凸起结构和所述若干凹陷结构。
  5. 根据权利要求1任一项所述的半导体薄膜剥离及转移衬底的方法，其特征在于，将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离，包括：
    利用化学腐蚀法将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离。
  6. 根据权利要求5所述的半导体薄膜剥离及转移衬底的方法，其特征在于，利用化学腐蚀法将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离，包括：
    在所述半导体薄膜层形成若干第一开口区域，所述第一开口区域连通至所述孔洞；
    在所述半导体薄膜层上方设置支撑衬底，且在所述支撑衬底上设置有连通第一开口区域的第二开口区域；
    将腐蚀液体通过所述第一开口区域和所述第二开口区域注入所述若干籽晶结构间的孔洞中，使所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离。
  7. 根据权利要求6所述的半导体薄膜剥离及转移衬底的方法，其特征在于，在将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离之前，还包括：
    在所述半导体薄膜层上生长第一功能层，所述第一功能层设置有第四开口区域，所述第四开口区域与所述第一开口区域连通。
  8. 根据权利要求5所述的半导体薄膜剥离及转移衬底的方法，其特征在于，利用化学腐蚀法将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离，包括：
    将所述半导体薄膜层粘附在支撑衬底上；
    在所述第一衬底层远离所述籽晶结构的一侧刻蚀若干第三开口区域，所述第三开口区域连通至所述孔洞；
    将腐蚀液体通过所述若干第三开口区域注入所述若干籽晶结构间的孔洞中，使所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离。
  9. 根据权利要求8所述的半导体薄膜剥离及转移衬底的方法，其特征在于，在将所述若干籽晶结构和所述半导体薄膜层从所述第一衬底层剥离之前，还包括：
    在所述半导体薄膜层上生长第二功能层。
  10. 根据权利要求6、7、8或9任一项所述的半导体薄膜剥离及转移衬底的方法，其特征在于，将所述若干籽晶结构远离所述半导体薄膜层的一侧与第二衬底层结合，包括：
    将所述若干籽晶结构远离所述半导体薄膜层的一侧粘附在所述第二衬底层上；
    采用浸泡法将所述支撑衬底移除。
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