CN109338293B - 在基板处理腔室中使用的准直器 - Google Patents
在基板处理腔室中使用的准直器 Download PDFInfo
- Publication number
- CN109338293B CN109338293B CN201811129929.9A CN201811129929A CN109338293B CN 109338293 B CN109338293 B CN 109338293B CN 201811129929 A CN201811129929 A CN 201811129929A CN 109338293 B CN109338293 B CN 109338293B
- Authority
- CN
- China
- Prior art keywords
- collimator
- apertures
- aspect ratio
- region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 230000002093 peripheral effect Effects 0.000 claims abstract description 22
- 230000007704 transition Effects 0.000 claims abstract description 18
- 238000005477 sputtering target Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462085009P | 2014-11-26 | 2014-11-26 | |
| US62/085,009 | 2014-11-26 | ||
| US14/607,273 | 2015-01-28 | ||
| US14/607,273 US9543126B2 (en) | 2014-11-26 | 2015-01-28 | Collimator for use in substrate processing chambers |
| CN201580061359.2A CN107002220B (zh) | 2014-11-26 | 2015-11-20 | 在基板处理腔室中使用的准直器 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580061359.2A Division CN107002220B (zh) | 2014-11-26 | 2015-11-20 | 在基板处理腔室中使用的准直器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109338293A CN109338293A (zh) | 2019-02-15 |
| CN109338293B true CN109338293B (zh) | 2021-06-04 |
Family
ID=56009603
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811129929.9A Active CN109338293B (zh) | 2014-11-26 | 2015-11-20 | 在基板处理腔室中使用的准直器 |
| CN201580061359.2A Active CN107002220B (zh) | 2014-11-26 | 2015-11-20 | 在基板处理腔室中使用的准直器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580061359.2A Active CN107002220B (zh) | 2014-11-26 | 2015-11-20 | 在基板处理腔室中使用的准直器 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9543126B2 (enExample) |
| EP (2) | EP3140851B1 (enExample) |
| JP (1) | JP6959863B2 (enExample) |
| KR (1) | KR101824517B1 (enExample) |
| CN (2) | CN109338293B (enExample) |
| IL (1) | IL251944B (enExample) |
| SG (2) | SG11201703543RA (enExample) |
| TW (1) | TWI618172B (enExample) |
| WO (1) | WO2016085805A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240127488A (ko) | 2015-10-27 | 2024-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 |
| IL261173B2 (en) | 2016-03-05 | 2023-03-01 | Applied Materials Inc | Methods and device for controlling ionic fraction in physical vapor deposition processes |
| US10697057B2 (en) | 2016-11-18 | 2020-06-30 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition chamber |
| JP2018154880A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社東芝 | コリメータおよび処理装置 |
| CN109390222B (zh) * | 2017-08-08 | 2021-01-05 | 宁波江丰电子材料股份有限公司 | 准直器检具及其使用方法 |
| USD858468S1 (en) | 2018-03-16 | 2019-09-03 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| US11017989B2 (en) | 2018-03-16 | 2021-05-25 | Samsung Electronics Co., Ltd. | Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same |
| USD859333S1 (en) | 2018-03-16 | 2019-09-10 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| WO2020088415A1 (zh) * | 2018-10-31 | 2020-05-07 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
| CN109457231B (zh) * | 2018-11-26 | 2020-04-03 | 武汉华星光电半导体显示技术有限公司 | 蒸镀载板及利用该蒸镀载板对基板进行蒸镀的方法 |
| CN111826607A (zh) * | 2019-04-18 | 2020-10-27 | 天通（嘉兴）新材料有限公司 | 一种激光管帽镀膜遮挡治具 |
| KR102695443B1 (ko) * | 2019-08-27 | 2024-08-16 | 삼성전자주식회사 | 기판 가장자리의 베벨 식각 장치 및 그를 이용한 반도체 소자의 제조 방법 |
| CN110643958A (zh) * | 2019-10-21 | 2020-01-03 | 吴浪生 | 一种利用溅镀实现晶圆的物理镀膜设备 |
| USD937329S1 (en) | 2020-03-23 | 2021-11-30 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
| USD998575S1 (en) | 2020-04-07 | 2023-09-12 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
| US11635338B2 (en) * | 2020-10-23 | 2023-04-25 | Applied Materials, Inc. | Rapid chamber vacuum leak check hardware and maintenance routine |
| USD1009816S1 (en) | 2021-08-29 | 2024-01-02 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| USD997111S1 (en) | 2021-12-15 | 2023-08-29 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
| USD1038901S1 (en) * | 2022-01-12 | 2024-08-13 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| FI20225334A1 (en) * | 2022-04-21 | 2023-10-22 | Biomensio Ltd | Collimator to produce piezoelectric layers having tilted c-axis orientation |
| USD1026054S1 (en) * | 2022-04-22 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1025935S1 (en) * | 2022-11-03 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1024149S1 (en) * | 2022-12-16 | 2024-04-23 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1026839S1 (en) * | 2022-12-16 | 2024-05-14 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1025936S1 (en) * | 2022-12-16 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| CN118854235B (zh) * | 2023-04-27 | 2025-10-10 | 北京北方华创微电子装备有限公司 | 工艺腔室以及半导体工艺设备 |
| CN119020736A (zh) * | 2023-05-24 | 2024-11-26 | 北京北方华创微电子装备有限公司 | 物理气相沉积设备的准直装置及物理气相沉积设备 |
| USD1103950S1 (en) * | 2024-03-21 | 2025-12-02 | Applied Materials, Inc. | Process chamber collimator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1114784A (zh) * | 1994-02-23 | 1996-01-10 | 三星电子株式会社 | 准直器及其制造方法 |
| CN103343317A (zh) * | 2013-07-11 | 2013-10-09 | 南京大学 | 基于纳米团簇束流沉积系统制备TiO2纳米颗粒减反膜的方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
| JPH06295903A (ja) * | 1993-02-09 | 1994-10-21 | Matsushita Electron Corp | スパッタリング装置 |
| JPH08260139A (ja) * | 1995-03-23 | 1996-10-08 | Sony Corp | 成膜用コリメータ、成膜装置及び電子装置の製造方法 |
| US5650052A (en) * | 1995-10-04 | 1997-07-22 | Edelstein; Sergio | Variable cell size collimator |
| US6362097B1 (en) | 1998-07-14 | 2002-03-26 | Applied Komatsu Technlology, Inc. | Collimated sputtering of semiconductor and other films |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| WO2003030224A2 (en) | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
| AU2003272739A1 (en) * | 2003-09-29 | 2005-05-11 | Seagate Technology Llc | System, method and collimator for oblique deposition |
| JP2007273490A (ja) * | 2004-03-30 | 2007-10-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| EP1710324B1 (en) | 2005-04-08 | 2008-12-03 | STMicroelectronics S.r.l. | PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device |
| US9316413B2 (en) | 2008-06-11 | 2016-04-19 | Honeywell International Inc. | Selectable efficiency versus comfort for modulating furnace |
| KR20160134873A (ko) * | 2008-06-17 | 2016-11-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 균일한 증착을 위한 장치 및 방법 |
| US20090308739A1 (en) | 2008-06-17 | 2009-12-17 | Applied Materials, Inc. | Wafer processing deposition shielding components |
| CN102301451A (zh) * | 2009-04-24 | 2011-12-28 | 应用材料公司 | 晶圆处理沉积屏蔽部件 |
-
2015
- 2015-01-28 US US14/607,273 patent/US9543126B2/en active Active
- 2015-11-20 KR KR1020167031655A patent/KR101824517B1/ko active Active
- 2015-11-20 EP EP15862359.5A patent/EP3140851B1/en active Active
- 2015-11-20 SG SG11201703543RA patent/SG11201703543RA/en unknown
- 2015-11-20 CN CN201811129929.9A patent/CN109338293B/zh active Active
- 2015-11-20 SG SG10202009604WA patent/SG10202009604WA/en unknown
- 2015-11-20 EP EP20172767.4A patent/EP3723113A1/en not_active Withdrawn
- 2015-11-20 CN CN201580061359.2A patent/CN107002220B/zh active Active
- 2015-11-20 JP JP2017527875A patent/JP6959863B2/ja active Active
- 2015-11-20 TW TW104138508A patent/TWI618172B/zh active
- 2015-11-20 WO PCT/US2015/061826 patent/WO2016085805A1/en not_active Ceased
-
2017
- 2017-04-26 IL IL251944A patent/IL251944B/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1114784A (zh) * | 1994-02-23 | 1996-01-10 | 三星电子株式会社 | 准直器及其制造方法 |
| CN103343317A (zh) * | 2013-07-11 | 2013-10-09 | 南京大学 | 基于纳米团簇束流沉积系统制备TiO2纳米颗粒减反膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IL251944B (en) | 2021-06-30 |
| CN107002220B (zh) | 2020-04-17 |
| JP2017537227A (ja) | 2017-12-14 |
| US20160145735A1 (en) | 2016-05-26 |
| KR20160138306A (ko) | 2016-12-02 |
| JP6959863B2 (ja) | 2021-11-05 |
| CN109338293A (zh) | 2019-02-15 |
| TW201622045A (zh) | 2016-06-16 |
| SG11201703543RA (en) | 2017-06-29 |
| IL251944A0 (en) | 2017-06-29 |
| CN107002220A (zh) | 2017-08-01 |
| SG10202009604WA (en) | 2020-11-27 |
| EP3723113A1 (en) | 2020-10-14 |
| US9543126B2 (en) | 2017-01-10 |
| EP3140851A1 (en) | 2017-03-15 |
| EP3140851A4 (en) | 2017-11-01 |
| WO2016085805A1 (en) | 2016-06-02 |
| KR101824517B1 (ko) | 2018-02-01 |
| EP3140851B1 (en) | 2020-05-06 |
| TWI618172B (zh) | 2018-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109338293B (zh) | 在基板处理腔室中使用的准直器 | |
| JP7504938B2 (ja) | Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |