KR101824517B1 - 기판 프로세싱 챔버들에서 사용하기 위한 콜리메이터 - Google Patents

기판 프로세싱 챔버들에서 사용하기 위한 콜리메이터 Download PDF

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KR101824517B1
KR101824517B1 KR1020167031655A KR20167031655A KR101824517B1 KR 101824517 B1 KR101824517 B1 KR 101824517B1 KR 1020167031655 A KR1020167031655 A KR 1020167031655A KR 20167031655 A KR20167031655 A KR 20167031655A KR 101824517 B1 KR101824517 B1 KR 101824517B1
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South Korea
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apertures
collimator
zone
aspect ratio
central zone
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Korean (ko)
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KR20160138306A (ko
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마틴 리 리커
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020167031655A 2014-11-26 2015-11-20 기판 프로세싱 챔버들에서 사용하기 위한 콜리메이터 Active KR101824517B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462085009P 2014-11-26 2014-11-26
US62/085,009 2014-11-26
US14/607,273 US9543126B2 (en) 2014-11-26 2015-01-28 Collimator for use in substrate processing chambers
US14/607,273 2015-01-28
PCT/US2015/061826 WO2016085805A1 (en) 2014-11-26 2015-11-20 Collimator for use in substrate processing chambers

Publications (2)

Publication Number Publication Date
KR20160138306A KR20160138306A (ko) 2016-12-02
KR101824517B1 true KR101824517B1 (ko) 2018-02-01

Family

ID=56009603

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167031655A Active KR101824517B1 (ko) 2014-11-26 2015-11-20 기판 프로세싱 챔버들에서 사용하기 위한 콜리메이터

Country Status (9)

Country Link
US (1) US9543126B2 (enExample)
EP (2) EP3723113A1 (enExample)
JP (1) JP6959863B2 (enExample)
KR (1) KR101824517B1 (enExample)
CN (2) CN107002220B (enExample)
IL (1) IL251944B (enExample)
SG (2) SG10202009604WA (enExample)
TW (1) TWI618172B (enExample)
WO (1) WO2016085805A1 (enExample)

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US11037768B2 (en) 2016-03-05 2021-06-15 Applied Materials, Inc. Methods and apparatus for controlling ion fraction in physical vapor deposition processes
TWI745486B (zh) * 2016-11-18 2021-11-11 美商應用材料股份有限公司 用於在物理氣相沉積腔室中的準直器
JP2018154880A (ja) * 2017-03-17 2018-10-04 株式会社東芝 コリメータおよび処理装置
CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
USD858468S1 (en) 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD859333S1 (en) 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
US11017989B2 (en) 2018-03-16 2021-05-25 Samsung Electronics Co., Ltd. Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same
WO2020088415A1 (zh) * 2018-10-31 2020-05-07 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN109457231B (zh) * 2018-11-26 2020-04-03 武汉华星光电半导体显示技术有限公司 蒸镀载板及利用该蒸镀载板对基板进行蒸镀的方法
CN111826607A (zh) * 2019-04-18 2020-10-27 天通（嘉兴）新材料有限公司 一种激光管帽镀膜遮挡治具
KR102695443B1 (ko) * 2019-08-27 2024-08-16 삼성전자주식회사 기판 가장자리의 베벨 식각 장치 및 그를 이용한 반도체 소자의 제조 방법
CN110643958A (zh) * 2019-10-21 2020-01-03 吴浪生 一种利用溅镀实现晶圆的物理镀膜设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
US11635338B2 (en) * 2020-10-23 2023-04-25 Applied Materials, Inc. Rapid chamber vacuum leak check hardware and maintenance routine
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) * 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
FI20225334A1 (en) * 2022-04-21 2023-10-22 Biomensio Ltd Collimator to produce piezoelectric layers having tilted c-axis orientation
USD1026054S1 (en) * 2022-04-22 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025935S1 (en) * 2022-11-03 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025936S1 (en) * 2022-12-16 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1026839S1 (en) * 2022-12-16 2024-05-14 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1024149S1 (en) * 2022-12-16 2024-04-23 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
CN118854235B (zh) * 2023-04-27 2025-10-10 北京北方华创微电子装备有限公司 工艺腔室以及半导体工艺设备
CN119020736A (zh) * 2023-05-24 2024-11-26 北京北方华创微电子装备有限公司 物理气相沉积设备的准直装置及物理气相沉积设备
USD1103950S1 (en) * 2024-03-21 2025-12-02 Applied Materials, Inc. Process chamber collimator

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Publication number Publication date
IL251944B (en) 2021-06-30
SG10202009604WA (en) 2020-11-27
TW201622045A (zh) 2016-06-16
CN107002220B (zh) 2020-04-17
EP3723113A1 (en) 2020-10-14
JP2017537227A (ja) 2017-12-14
EP3140851A1 (en) 2017-03-15
JP6959863B2 (ja) 2021-11-05
EP3140851A4 (en) 2017-11-01
WO2016085805A1 (en) 2016-06-02
IL251944A0 (en) 2017-06-29
SG11201703543RA (en) 2017-06-29
US9543126B2 (en) 2017-01-10
CN109338293B (zh) 2021-06-04
TWI618172B (zh) 2018-03-11
CN107002220A (zh) 2017-08-01
KR20160138306A (ko) 2016-12-02
EP3140851B1 (en) 2020-05-06
CN109338293A (zh) 2019-02-15
US20160145735A1 (en) 2016-05-26

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US11309169B2 (en) Biasable flux optimizer / collimator for PVD sputter chamber

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