CN109273524A - 隧穿场效应晶体管及其形成方法 - Google Patents
隧穿场效应晶体管及其形成方法 Download PDFInfo
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- CN109273524A CN109273524A CN201710580672.8A CN201710580672A CN109273524A CN 109273524 A CN109273524 A CN 109273524A CN 201710580672 A CN201710580672 A CN 201710580672A CN 109273524 A CN109273524 A CN 109273524A
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Abstract
本发明提供一种隧穿场效应晶体管及其形成方法,其中,方法包括:提供衬底;在衬底上形成栅极结构,栅极结构下方衬底中具有沟道区,栅极结构包括相对的第一侧和第二侧;在栅极结构第一侧的衬底中形成第一源漏掺杂层,第一源漏掺杂层中具有第一源漏离子,第一源漏掺杂层与所述沟道区的接触面上具有凸出部;在栅极结构第二侧的衬底中形成第二源漏掺杂层,所述第二源漏掺杂层中具有第二源漏离子,所述第二源漏离子与所述第一源漏离子的导电类型相反。其中,沟道开启之后,所述凸出部能够增加所述第一源漏掺杂层与第二源漏掺杂层之间的电场强度,从而能够增加所形成隧穿场效应晶体管的导通电流。
Description
技术领域
本发明涉及半导体制造技术领域,尤其涉及一种隧穿场效应晶体管及其形成方法。
背景技术
随着半导体器件集成度的提高,晶体管的关键尺寸不断缩小,关键尺寸的缩小意味着在芯片上可布置更多数量的晶体管。然而,随着晶体管尺寸的急剧减小,CMOS场效应晶体管面临很大的挑战,例如短沟道效应增加,漏电流增大,亚阈值斜率在室温下存在60mV/dec的极限。
为了适应晶体管尺寸的缩小,抑制短沟道效应,降低亚阈值斜率,TFET(tunnelfiled-effect transistor,隧穿场效应晶体管)应运而生。TFET是一种金属氧化物半导体栅控PIN二极管。TFET主要是利用量子学隧穿效应做为控制电流的主要机制,使用栅压控制器件内部电势分布形状,从而影响隧穿发生条件,当条件满足时器件开启,当条件不满足时器件电流迅速下降关断。TFET具有低压阈值斜率、关断电流小的优点。
然而,现有技术形成的TFET仍然存在亚阈值斜率较高、导通电流较小的问题。
发明内容
本发明解决的问题是提供一种隧穿场效应晶体管及其形成方法,能够降低TFET的亚阈值斜率较高,增加导通电流。
为解决上述问题,本发明提供一种隧穿场效应晶体管的形成方法,包括:提供衬底;在所述衬底上形成栅极结构,所述栅极结构下方衬底中具有沟道区,所述栅极结构包括相对的第一侧和第二侧;在所述栅极结构第一侧的衬底中形成第一源漏掺杂层,所述第一源漏掺杂层中具有第一源漏离子,所述第一源漏掺杂层与所述衬底的沟道区的接触面上具有凸出部;在所述栅极结构第二侧的衬底中形成第二源漏掺杂层,所述第二源漏掺杂层中具有第二源漏离子,所述第二源漏离子与所述第一源漏离子的导电类型相反。
可选的,所述隧穿场效应晶体管为N型晶体管;所述第一源漏离子为P型离子。
可选的,所述隧穿场效应晶体管为P型晶体管;所述第一源漏离子为N型离子。
可选的,所述第二源漏掺杂层与沟道区的接触面上具有凸出部。
可选的,形成所述第一源漏掺杂层的步骤包括:在所述栅极结构第一侧衬底中形成凹槽,所述凹槽邻近所述栅极结构的侧壁表面具有凹陷;在所述凹槽和所述凹陷中形成第一源漏掺杂层。
可选的,形成所述凹槽的步骤包括:对所述栅极结构第一侧的衬底进行多次选择离子注入,在所述栅极结构第一侧的衬底中形成掺杂结构,所述掺杂结构与所述衬底的沟道区接触面上具有凸出结构;去除所述掺杂区结构和凸出结构,在所述栅极结构第一侧衬底中形成所述凹槽。
可选的,对所述栅极结构第一侧的衬底进行多次选择离子注入的步骤包括:对所述栅极结构第一侧的衬底进行第一选择离子注入,在所述栅极结构第一侧的衬底中形成第一掺杂区;对所述栅极结构第一侧的衬底进行第二选择离子注入,在所述栅极结构第一侧的衬底中形成第二掺杂区,所述第一掺杂区位于所述第二掺杂区上;对所述栅极结构第一侧的衬底进行第三选择离子注入,在所述栅极结构第一侧的衬底中形成第三掺杂区,所述第二掺杂区位于所述第三掺杂区上。
可选的,所述第一选择离子注入之后,进行所述第二选择离子注入;或者所述第二选择离子注入之后,进行所述第一选择离子注入;所述第二选择离子注入之后,进行所述第三选择离子注入;或者所述第三选择离子注入之后,进行所述第二选择离子注入;所述第一选择离子注入之后,进行所述第三选择离子注入;或者,所述第三选择离子注入之后,进行所述第一选择离子注入。
可选的,所述第一选择离子注入的能量小于所述第二选择离子注入的能量,所述第二选择离子注入的能量小于所述第三选择离子注入的能量。
可选的,所述第一选择离子注入的注入参数包括:注入角度为0度~7度,注入能量为4.5KeV~5.5KeV,注入剂量为1.8E14sccm~2.2E14sccm;所述第二选择离子注入的注入参数包括:注入角度为0度~2度,注入能量为7.2KeV~8.8KeV,注入剂量为2.7E14sccm~3.3E14sccm;所述第三选择离子注入的注入参数包括:注入角度为0度~2度,注入能量为10.5KeV~13.5KeV,注入剂量为3.6E14sccm~4.4E14sccm。
可选的,所述选择离子注入的注入离子为磷离子、锗离子、砷离子、硼离子、BF2 +离子、碳离子、硅离子、锗离子或氮离子中的一种或多种组合。
可选的,多次选择离子注入之后,形成所述第一源漏掺杂层的步骤还包括:对所述掺杂结构进行退火处理。
可选的,所述凹槽包括:位于所述栅极结构第一侧衬底中的第一凹槽;位于所述第一凹槽底部衬底中的第二凹槽;形成所述凹槽的步骤包括:对栅极结构的第一侧衬底进行第一凹槽刻蚀,在所述栅极结构第一侧衬底中形成第一凹槽,所述第一凹槽邻近所述栅极结构的侧壁为第一圆柱面,所述第一圆柱面的母线平行于栅极结构的延伸方向;对所述第一凹槽底部进行第二凹槽刻蚀,形成第二凹槽,所述第二凹槽邻近所述栅极结构的侧壁为第二圆柱面,所述第二圆柱面的母线平行于栅极结构的延伸方向。
可选的,去除所述掺杂结构的步骤包括:对所述掺杂结构进行第一刻蚀,在所述栅极结构第一侧衬底中形成初始凹槽;对所述初始凹槽侧壁进行第二刻蚀,在所述初始凹槽侧壁表面形成凹陷。
可选的,所述第一刻蚀包括各向异性干法刻蚀工艺;所述第二刻蚀包括各向同性干法刻蚀工艺或湿法刻蚀工艺。
可选的,形成所述第一源漏掺杂层的步骤包括:对所述栅极结构第一侧的衬底进行多次掺杂离子注入,在所述栅极结构第一侧的衬底中形成源漏结构,所述源漏结构包括多层源漏区,多层源漏区在垂直于所述衬底表面方向上层叠设置,所述源漏区与所述衬底的沟道区的接触面上具有凸出部。
可选的,所述掺杂离子注入的注入离子为N型离子或P型离子。
可选的,所述衬底的材料为硅、锗、硅锗或碳化硅,所述掺杂离子注入的注入离子为磷离子、砷离子、锑离子、硼离子或BF2 +离子。
相应的,本发明还提供一种隧穿场效应晶体管,包括:衬底;位于所述衬底上的栅极结构,所述栅极结构下方衬底中具有沟道区,所述栅极结构包括相对的第一侧和第二侧;位于所述栅极结构第一侧的衬底中的第一源漏掺杂层,所述第一源漏掺杂层中具有第一源漏离子,所述第一源漏掺杂层与所述衬底的沟道区的接触面上具有凸出部;位于所述栅极结构第二侧的衬底中的第二源漏掺杂层,所述第二源漏掺杂层中具有第二源漏离子,所述第二源漏离子与所述第一源漏离子的导电类型相反。
可选的,所述凸出部在垂直于所述栅极结构延伸方向上的截面的形状为圆弧形、矩形或三角形。
与现有技术相比,本发明的技术方案具有以下优点:
本发明技术方案提供的隧穿场效应晶体管的形成方法中,所述第一源漏掺杂层与所述衬底沟道区的接触面上具有凸出部。沟道开启之后,由于尖端放电效应,所述凸出部能够增加所述第一源漏掺杂层与第二源漏掺杂层之间的电场强度。沟道开启之后,沟道与第一源漏掺杂层之间形成势垒,或者沟道与第二源漏掺杂层之间形成势垒。所述第一源漏掺杂层与所述第二源漏掺杂层之间的电场强度增加,能够增加电子穿过所述势垒的几率,从而增加所形成半导体结构的导通电流。
进一步,所形成的隧穿场效应晶体管为N型晶体管,所述第一源漏离子为P型离子。沟道开启之后,第一源漏掺杂层与沟道的导电类型相反,第一源漏掺杂层与沟道之间具有势垒。所述第一源漏掺杂层与所述衬底沟道区的接触面上具有凸出部,则所述第一源漏掺杂层与沟道的接触面上的电场较强,从而容易使电子通过隧穿效应穿过所述势垒形成电流,进而能够增加半导体结构的导通电流。
进一步,所形成的隧穿场效应晶体管为P型晶体管所述第一源漏离子为N型离子。沟道开启之后,所述第一源漏掺杂层与沟道的导电类型相反,第一源漏掺杂层与沟道之间具有势垒。所述第一源漏掺杂层与所述沟道区的接触面上具有凸出部,由于尖端放电效应,所述凸出部能够增加所述第一源漏掺杂层与沟道的接触面上的电场,从而容易使电子通过隧穿效应穿过所述势垒形成电流,进而能够增加半导体结构的导通电流。
进一步,通过对所述栅极结构第一侧的衬底进行多次离子注入,形成掺杂结构,能够增加所述掺杂结构与衬底之间的刻蚀选择比。因此,在对所述掺杂结构进行刻蚀时,能够较容易地去除所述掺杂结构。此外去除所述掺杂结构之后,在所述凹槽中形成第一源漏掺杂层,能精确控制所述第一源漏掺杂层中第一源漏离子的浓度,且能够使所述第一源漏掺杂层中第一源漏离子的分布较均匀,从而改善所形成隧穿场效应晶体管的性能。
本发明技术方案提供的隧穿场效应晶体管中,所述第一源漏掺杂层与所述沟道的接触面上具有凸出部。沟道开启之后,所述凸出部能够增加所述第一源漏掺杂层与第二源漏掺杂层之间的电场强度。沟道开启之后,沟道与第一源漏掺杂层之间形成势垒,或者沟道与第二源漏掺杂层之间形成势垒。所述第一源漏掺杂层与所述第二源漏掺杂层之间的电场强度增加,能够增加电子穿过所述势垒的几率,从而增加所形成半导体结构的导通电流。
附图说明
图1是一种隧穿场效应晶体管的结构示意图;
图2至图9是本发明隧穿场效应晶体管的形成方法一实施例各步骤的结构示意图;
图10是本发明的隧穿场效应晶体管另一实施例的结构示意图;
图11是本发明的隧穿场效应晶体管又一实施例的结构示意图。
具体实施方式
现有技术的隧穿场效应晶体管存在诸多问题,例如:亚阈值斜率较高,导通电流较小。
现结合现有技术的隧穿场效应晶体管,分析现有技术的隧穿场效应晶体管的亚阈值斜率较高,导通电流较小的原因:
图1是一种隧穿场效应晶体管的结构示意图。
请参考图1,所述隧穿场效应晶体管包括:半导体衬底100;位于所述半导体衬底100上的栅极结构110;分别位于所述栅极结构110两侧半导体衬底100中的源区111和漏区112,所述源区111中具有第一源漏离子,所述漏区112中具有第二源漏离子,所述第二源漏杂离子与所述第一源漏离子的导电类型相反。
其中,所述源区111与所述漏区112之间的半导体衬底100构成沟道区。当在所述栅极结构110上施加电压时,所述沟道区的能带下降,当所述沟道区的价带底低于所述源区111的导带顶时,源区111价带上的电子能够通过带带隧穿效应穿过源区111与沟道区之间的势垒,从而使隧穿场效应晶体管导通。
然而,为了降低隧穿场效应晶体管的功耗,隧穿场效应晶体管在工作过程中,所述源区111与衬底100之间的电压较小。所述源区111价带上的电子不容易穿过源区111与沟道区之间的势垒,从而导致在栅极电压一定的条件下,所述漏区112的电流较小,进而导致所述半导体器件亚阈值斜率(subthreshod slop,ss)较高,导通电流较小。
为解决所述技术问题,本发明提供了一种隧穿场效应晶体管的形成方法,包括:提供衬底;在所述栅极结构第一侧的衬底中形成第一源漏掺杂层,所述第一源漏掺杂层中具有第一源漏离子,所述第一源漏掺杂层与所述衬底沟道区的接触面上具有凸出部。沟道开启之后,所述凸出部能够增加所述第一源漏掺杂层与第二源漏掺杂层之间的电场强度,从而能够增加所形成隧穿场效应晶体管的导通电流。
为使本发明的上述目的、特征和优点能够更为明显易懂,下面结合附图对本发明的具体实施例做详细的说明。
图2至图9是本发明隧穿场效应晶体管的形成方法一实施例各步骤的结构示意图。
请参考图2,提供衬底200;在所述衬底200上形成栅极结构,所述栅极结构下方衬底200中具有沟道区,所述栅极结构包括相对的第一侧I和第二侧II。
所述衬底200为本征半导体。在其他实施例中,所述衬底的材料为包含第三主族和第五主族元素的单晶体,例如:GaAs、InGaAs、InAs、InAlAs或InP。
具体的,本实施例中,所述衬底200的材料为硅、锗、硅锗或碳化硅。
所述栅极结构包括:位于所述衬底200上的栅介质层211;位于所述栅介质层211上的栅极212;位于所述栅极212上的掩膜层213。
本实施例中,所述栅介质层211的材料为氧化硅。在其他实施例中,所述栅介质层的材料可以为高k(k大于3.9)介质材料。
本实施例中,所述栅极212的材料为多晶硅。在其他实施例中,所述栅极的材料为多晶锗或多晶硅锗。
本实施例中,所述掩膜层213的材料为氮化硅。
所述形成方法还包括:在所述栅极结构侧壁表面形成侧墙214。
所述侧墙214用于定义后续形成的第一源漏掺杂层和第二源漏掺杂层的位置,防止第一源漏掺杂层和第二源漏掺杂层过于靠近沟道,从而减小短沟道效应。
请参考图3,在所述栅极结构第二侧II的衬底200中形成第二源漏掺杂层220,所述第二源漏掺杂层220中具有第二源漏离子。
所述第二源漏掺杂层220用做所述隧穿场效应晶体管的漏区。
本实施例中,所述第二源漏离子为N型离子,例如磷离子、砷离子或锑离子。在其他实施例中,所述衬底为包含第三主族或第五主族元素的晶体,例如InGaAs,则所述N型离子为硅离子或碲离子。
本实施例中,通过源漏离子注入在所述栅极结构第二侧II的衬底200中形成第二源漏掺杂层220。在其他实施例中,形成所述第二源漏掺杂层的步骤包括:对所述栅极结构第二侧衬底进行刻蚀,在所述衬底中形成源漏凹槽;通过外延生长工艺在所述源漏凹槽中形成所述第二源漏掺杂层。
在其他实施例中,所述第二源漏掺杂层与沟道之间的接触面上具有凸出部。形成所述第二源漏掺杂层的步骤包括:在所述栅极结构第二侧衬底中形成源漏凹槽,所述源漏凹槽邻近所述栅极结构的侧壁中具有源漏凹陷;在所述源漏凹槽和源漏凹陷中形成第二源漏掺杂层。
后续在所述栅极结构第一侧I的衬底200中形成第一源漏掺杂层,所述第一源漏掺杂层中具有第一源漏离子,所述第一源漏掺杂层与所述衬底200沟道区的接触面上具有凸出部,所述第二源漏离子与所述第一源漏离子的导电类型相反。
所述第一源漏掺杂层与所述沟道区的接触面上具有凸出部。沟道开启之后,所述凸出部能够增加所述第一源漏掺杂层与第二源漏掺杂层之间的电场强度。沟道开启之后,沟道与第一源漏掺杂层之间形成势垒,或者沟道与第二源漏掺杂层之间形成势垒。所述第一源漏掺杂层与第二源漏掺杂层之间的电场强度增加,能够增加电子穿过所述势垒的几率,从而增加所形成半导体结构的导通电流。
本实施例中,形成所述第一源漏掺杂层的步骤包括:在所述栅极结构第一侧I衬底200中形成凹槽,所述凹槽邻近所述沟道区的侧壁表面具有凹陷;在所述凹槽和凹陷中形成第一源漏掺杂层。具体的,形成所述第一源漏掺杂层的步骤如图4至图9所示。
本实施例中,形成所述凹槽的步骤包括:对所述栅极结构第一侧I的衬底200进行多次选择离子注入,在所述栅极结构第一侧I的衬底200中形成掺杂结构,所述掺杂结构与沟道区的接触面上具有凸出结构;去除所述掺杂结构和凸出结构,形成所述凹槽。具体的,在所述栅极结构第一侧I衬底200中形成凹槽的步骤如图4至8所示。
本实施例中,通过对所述栅极结构第一侧I的衬底200进行三次选择离子注入形成掺杂结构。具体的,形成所述掺杂结构的步骤如图4至图7所示。
在其他实施例中,可以通过对所述栅极结构第一侧的衬底进行两次或三次以上的选择离子注入。
所述选择离子注入用于形成掺杂结构,增加后续形成凹槽的过程中,掺杂结构与衬底200的刻蚀选择比,从而减小后续刻蚀掺杂结构的工艺难度。
请参考图4,对所述栅极结构第一侧I的衬底200进行第一选择离子注入,在所述栅极结构第一侧I的衬底200中形成第一掺杂区231。
本实施例中,所述第一选择离子注入注入的离子为掺杂离子。所述第一选择离子注入之后,所述掺杂离子容易发生扩散,使所述第一掺杂区231与所述沟道区衬底200的接触面为圆柱面,所述第一掺杂区231与所述沟道区衬底200的接触面的母线沿栅极结构延伸方向,从而使所述第一掺杂区231与所述栅极结构下方衬底200的接触面上具有凸出结构。
本实施例中,所述第一选择离子注入的步骤包括:通过倾斜离子注入对所述栅极结构第一侧I的衬底200进行离子注入;通过垂直离子注入对所述栅极结构第一侧I的衬底200进行离子注入。
本实施例中,所述倾斜离子注入之后,进行所述垂直离子注入;或者所述垂直离子注入之后,进行所述倾斜离子注入。
在其他实施例中,所述第一选择离子注入可以仅包括倾斜离子注入或垂直离子注入。
所述倾斜离子注入朝向所述栅极结构。所述倾斜离子注入的注入角度为所述倾斜离子注入与所述衬底200表面法线的锐角夹角。
本实施例中,所述倾斜离子注入的注入角度为7度。在其他实施例中,所述倾斜离子注入的注入角度可以为大于0度小于8度的其他值。
所述倾斜离子注入用于使第一掺杂区231与所述栅极结构中心线之间的间距减小,从而增加后续形成的第一源漏掺杂层对沟道的应力,从而增加载流子迁移速率。
所述垂直离子注入的注入角度为所述垂直离子注入与所述衬底200表面法线的锐角夹角。
所述垂直离子注入的注入角度为0度。
如果所述垂直离子注入与倾斜离子注入的注入能量过大,则所述第一掺杂区231的深度过大,不利于在所述栅极结构第一侧I表面掺杂入掺杂离子;如果所述垂直离子注入与倾斜离子注入的注入能量过小,不利于使所述第一掺杂离子进入所述衬底200中。具体的,本实施例中,所述垂直离子注入与倾斜离子注入的注入能量为4.5KeV~5.5KeV。
如果所述垂直离子注入与倾斜离子注入的注入剂量过小,不利于改变所述栅极结构第一侧I衬底200在后续形成所述凹槽240的过程中的刻蚀速率,从而不利于形成所述凹槽240;如果所述垂直离子注入与倾斜离子注入的注入剂量过大,容易产生材料浪费。具体的,本实施例中,所述垂直离子注入与倾斜离子注入的注入剂量为1.8E14sccm~2.2E14sccm。
请参考图5,对所述栅极结构第一侧I的衬底200进行第二选择离子注入,在所述栅极结构第一侧I的衬底200中形成第二掺杂区232,所述第一掺杂区231位于所述第二掺杂区232上。
本实施例中,所述第一选择离子注入之后,进行所述第二选择离子注入。在其他实施例中,还可以在所述第二选择离子注入之后,进行所述第一选择离子注入。
通过所述第二选择离子注入在所述栅极结构第一侧I衬底200中注入所述掺杂离子,形成所述第二掺杂区232。
所述第二选择离子注入之后,所述第二掺杂区232中的掺杂离子容易发生扩散,从而使所述第二掺杂区232与沟道区衬底200的接触面为圆柱面,所述第二掺杂区232与沟道区衬底200的接触面的母线沿栅极结构延伸方向,从而使所述第二掺杂区232与衬底200沟道区的接触面上具有凸出结构。
由于所述第一掺杂区231位于所述第二掺杂区232上,则所述第二选择离子注入的能量大于所述第一选择离子注入的能量。
本实施例中,所述第一掺杂区231与所述第二掺杂区232接触,从而使所述第一掺杂区231与所述第二掺杂区232之间没有未掺杂所述掺杂离子的衬底200,从而有利于后续对所述掺杂结构进行刻蚀,形成凹槽。
如果所述第二选择离子注入的注入能量过小,不容易使所述第二掺杂区232位于所述第一掺杂区231下方,从而不利于增加所述掺杂结构的深度,不利于后续形成凹槽;如果所述第二选择离子注入的注入能量过大,容易使所述第一掺杂区231与所述第二掺杂区232之间具有未掺杂所述掺杂离子的衬底200,从而容易影响后续对掺杂结构的刻蚀速率。因此,本实施例中,所述第二选择离子注入的注入能量为7.2KeV~8.8KeV。
如果所述第二选择离子注入的注入剂量过小,不利于改变所述栅极结构第一侧I衬底200在后续形成所述凹槽的过程中的刻蚀速率,从而不利于形成所述凹槽;如果所述第二选择离子注入的注入剂量过大,容易产生材料浪费。具体的,本实施例中,所述第二选择离子注入的注入剂量为2.7E14sccm~3.3E14sccm。
所述第二选择离子注入的注入角度为所述第二选择离子注入与所述衬底200表面法线的锐角夹角。
所述第二选择离子注入朝向所述栅极结构。
如果所述第二选择离子注入的注入角度过大,容易使所述第二掺杂区232距离所述栅极结构中心线过近,而栅极结构对深度较大的第二掺杂区232中载流子的控制能力较弱,容易产生短沟道效应。另外所述第二选择离子注入的注入剂量较大,因此,所述第二选择离子注入的角度不能过大。本实施例中,所述第二选择离子注入的注入角度为0度~2度。
请参考图6,对所述栅极结构第一侧I的衬底200进行第三选择离子注入,在所述栅极结构第一侧I的衬底200中形成第三掺杂区233,所述第二掺杂区232位于所述第三掺杂区233上。
本实施例中,所述第二选择离子注入之后,进行所述第三选择离子注入。在其他实施例中,还可以在所述第三选择离子注入之后,进行所述第二选择离子注入。
本实施例中,所述第一选择离子注入之后,进行所述第三选择离子注入。在其他实施例中,还可以在所述第三选择离子注入之后,进行所述第一选择离子注入。
通过所述第三选择离子注入在所述栅极结构第一侧I衬底200中注入掺杂离子,形成所述第三掺杂区233。
所述第三选择离子注入之后,所述第三掺杂区233中的掺杂离子容易发生扩散,从而使所述第三掺杂区233与栅极结构下方衬底200的接触面为圆柱面,所述第三掺杂区233与栅极结构下方衬底200的接触面的母线沿栅极结构延伸方向,从而使所述第三掺杂区233与衬底200沟道区的接触面上具有凸出结构。
由于所述第二掺杂区232位于所述第三掺杂区233上,则所述第三选择离子注入的能量大于所述第二选择离子注入的能量。所述第一掺杂区231位于所述第三掺杂区233上,所述第三选择离子注入的能量大于所述第一选择离子注入的能量。
本实施例中,所述第二掺杂区232与所述第三掺杂区233接触,从而使所述第二掺杂区232与所述第三掺杂区233之间没有未掺杂所述掺杂离子的衬底200,从而有利于后续对所述掺杂结构进行刻蚀,形成凹槽。
如果所述第三选择离子注入的注入能量过小,不容易使所述第三掺杂区233位于所述第二掺杂区232下方,从而不利于增加所述掺杂结构的深度,不利于后续形成凹槽;如果所述第三选择离子注入的注入能量过大,容易使所述第三掺杂区233与所述第二掺杂区232之间具有未掺杂所述掺杂离子的衬底200,从而容易影响后续对掺杂结构的刻蚀速率。因此,本实施例中,所述第三选择离子注入的注入能量为10.5KeV~13.5KeV。
如果所述第三选择离子注入的注入剂量过小,不利于改变所述栅极结构第一侧I衬底200在后续形成凹槽的过程中的刻蚀速率,从而不利于形成凹槽;如果所述第三选择离子注入的注入剂量过大,容易产生材料浪费。具体的,本实施例中,所述第三选择离子注入的注入剂量为3.6E14sccm~4.4E14sccm。
本实施例中,所述第三选择离子注入朝向所述栅极结构。
所述第三选择离子注入的注入角度为所述第三选择离子注入与所述衬底200表面法线的锐角夹角。
如果所述第三选择离子注入的注入角度过大,容易使所述第三掺杂区233距离所述栅极结构中心线过近,而栅极结构对深度较大的第三掺杂区233的中载流子的控制能力较弱,容易产生短沟道效应。另外所述第三选择离子注入的注入剂量较大,因此,所述第三选择离子注入的角度不能过大。因此,本实施例中,所述第三选择离子注入的注入角度为0度~2度。
本实施例中,所述掺杂离子用于改变所述栅极结构第一侧I衬底200的刻蚀速率,所述掺杂离子为N型离子、P型离子或中性离子。具体的,所述选择离子注入的注入离子为磷离子、锗离子、砷离子、硼离子、BF2 +、碳离子、硅离子、锗离子或氮离子中的一种或多种组合。
请参考图7,对所述掺杂结构进行退火处理。
所述退火处理用于使所述掺杂结构中的掺杂离子发生扩散,从而使所述掺杂离子在所述掺杂结构中分布均匀,从而使在后续刻蚀所述掺杂结构的过程中,所述掺杂结构的刻蚀速率分布均匀。
另外,本实施例中,第二选择离子注入和第三选择离子注入的注入角度小于所述倾斜离子注入的注入角度,则所述第一掺杂区231邻近栅极结构的侧壁与所述栅极结构中心线的距离小于所述第二掺杂区232邻近栅极结构的侧壁与所述栅极结构中心线的距离,且所述第一掺杂区231邻近栅极结构的侧壁与所述栅极结构中心线的距离小于所述第三掺杂区233邻近栅极结构的侧壁与所述栅极结构中心线的距离。又由于所述第二选择离子注入和第三选择离子注入的注入剂量大于所述第一选择离子注入的注入剂量。因此,在所述退火处理过程中,所述第二掺杂区232和第三掺杂区233中的掺杂离子向栅极结构下方衬底200中的扩散速度较快,从而能够使所述第一掺杂区231邻近栅极结构的侧壁与所述栅极结构中心线的距离等于所述第二掺杂区232邻近栅极结构的侧壁与所述栅极结构中心线的距离,且所述第一掺杂区231邻近栅极结构的侧壁与所述栅极结构中心线的距离等于所述第三掺杂区233邻近栅极结构的侧壁与所述栅极结构中心线的距离。
在其他实施例中,所述第一掺杂区邻近栅极结构的侧壁与所述栅极结构中心线的距离与所述第三掺杂区邻近栅极结构的侧壁与所述栅极结构中心线的距离不相等;所述第一掺杂区邻近栅极结构的侧壁与所述栅极结构中心线的距离与所述第二掺杂区邻近栅极结构的侧壁与所述栅极结构中心线的距离不相等。
请参考图8,去除所述掺杂结构和凸出结构,形成所述凹槽240。
所述凹槽240用于后续容纳第一源漏掺杂层。
本实施例中,去除所述掺杂结构的工艺包括湿法刻蚀工艺和干法刻蚀工艺。
由于所述掺杂结构中具有掺杂离子,在去除所述掺杂结构的过程中,所述掺杂结构与衬底200的刻蚀选择比较大,从而能够较容易地去除所述掺杂结构,且能够减小对未掺杂的衬底200的损耗。
具体的,本实施例中,去除所述掺杂结构的步骤包括:对所述栅极结构第一侧I衬底200进行第一刻蚀,在所述栅极结构第一层衬底200中形成初始凹槽240;对所述初始凹槽240侧壁进行第二刻蚀,在所述初始凹槽240邻近所述栅极结构的侧壁中形成凹陷。
所述凹陷用于后续容纳第一源漏掺杂层的凸出部。
所述第一刻蚀包括:各向异性干法刻蚀工艺;所述第二刻蚀包括:各向同性干法刻蚀工艺或湿法刻蚀工艺。
所述第一刻蚀的工艺参数包括:刻蚀气体包括CF4、CH3F、HBr、Cl2、Ar、N2或O2中的一种或多种组合;刻蚀气体的流量为50sccm~1000sccm。
所述第二刻蚀工的工艺参数包括:刻蚀液包括:NH4OH、NaOH、KOH、H2O2、H2O、HCl、HF或NH4F中的一种或多种组合。
需要说明的是,所述第一刻蚀在纵向的刻蚀速率小于横向的刻蚀速率,所述第一刻蚀形成的初始凹槽240侧壁表面较平坦;所述第二刻蚀在横向的刻蚀速率较大,能够去除所述凸出结构,从而在所述初始凹槽240邻近所述栅极结构的侧壁中形成凹陷。
请参考图9,在所述凹槽240中形成第一源漏掺杂层241,所述第一源漏掺杂层241中具有第一源漏离子。
所述第一源漏掺杂层241用于所述隧穿场效应晶体管的源区。
需要说明的是,本实施例中,所形成的隧穿晶体管效应晶体管为N型晶体管。沟道开启之后,第一源漏掺杂层241与沟道的导电类型相反,第一源漏掺杂层241与沟道之间具有势垒。所述第一源漏掺杂层241与所述沟道区衬底200的接触面上具有凸出部,由于尖端放电效应,所述第一源漏掺杂层241与沟道的接触面上的电场较强,从而容易使电子通过隧穿效应穿过所述势垒形成电流,进而能够增加半导体结构的导通电流。
通过外延生长工艺在所述凹槽240中形成外延层,并在所述外延生长的过程中对所述外延层进行原位掺杂,在所述外延层中掺入第一源漏离子,形成第一源漏掺杂层241。
由于所述凹槽240邻近所述栅极结构的侧壁表面具有凹陷。在所述外延生长过程中,外延层会填充于所述凹陷中,所述凹陷中的外延层通过原位掺杂之后,形成凸出部。
本实施例中,所述第一源漏离子为P型离子。
本实施例中,所述外延层为硅、锗或硅锗,则所述P型离子为硼离子、镓离子或BF2 +离子。在其他实施例中,所述外延层的材料为第三主族和第五主族元素形成的单晶体,例如GaAs、InGaAs、InAs、InAlAs、InP,所述P型离子为碳离子、镁离子或锰离子。
本实施例中,通过去除所述掺杂结构和凸出结构,形成凹槽240和所述凹陷,并在所述凹槽240中形成第一源漏掺杂层241。去除所述掺杂结构之后,在所述凹槽240和凹陷中形成第一源漏掺杂层241,能够对所述第一源漏掺杂层241中第一源漏离子的浓度进行精确控制,且能够使所述第一源漏掺杂层241中第一源漏离子的分布较均匀。
需要说明的是,本发明是以所形成的隧穿场效应晶体管为N型晶体管为例进行说明的。在其他实施例中,所形成的隧穿场效应晶体管为P型晶体管,则当所述栅极结构与所述第一源漏掺杂层之间的电压小于零时,形成所述沟道;所述第一源漏离子为N型离子,所述第二源漏离子为P型离子。
本发明实施例还提供一种隧穿场效应晶体管的形成方法。
本实施例中,所述隧穿场效应晶体管的形成方法与图1至图9所示的隧穿场效应晶体管的形成方法的不同之处在于:本实施例中,形成所述第一源漏掺杂层的步骤中,不需要形成所述凹槽。
具体的,本实施例中,形成所述第一源漏掺杂层的步骤包括:对所述栅极结构第一侧的衬底进行多次掺杂离子注入,分别在所述栅极结构第一侧的衬底中形成源漏结构,所述源漏结构包括多层源漏区,多层源漏区在垂直于所述衬底表面方向上层叠设置,所述源漏区与所述衬底的沟道区的接触面上具有凸出部。
当所形成的隧穿场效应晶体管为N型晶体管时,所述掺杂离子注入的注入离子为P型离子。当所形成的隧穿场效应晶体管为P型晶体管时,所述掺杂离子注入的注入离子为N型离子。
本实施例中,所述掺杂离子注入的次数为三次。在其他实施例中,所述掺杂离子注入的次数还可以为其他值。
具体的,三次所述掺杂离子注入分别为第一掺杂离子注入、第二离子注入和第二离子注入。
本实施例中,对所述栅极结构第一侧的衬底进行第一掺杂离子注入之后,进行所述第二掺杂离子注入;所述第二掺杂离子注入之后进行第三掺杂离子注入。在其他实施例中,还可以进行所述第一掺杂离子注入之前,进行第二掺杂离子注入;第二掺杂离子注入之前,进行所述第三掺杂离子注入。
本实施例中,所述第一掺杂离子注入的步骤参照上一实施例中第一选择离子注入的步骤;所述第二掺杂离子注入的工艺参数参照上一实施例中第二选择离子注入的工艺参数;所述第三掺杂离子注入的工艺参数参照上一实施例中第三选择离子注入的工艺参数。
本发明实施例还提供另一种隧穿场效应晶体管的形成方法。本实施例与图2至图9所示形成方法的相同之处在此不做赘述,不同之处在于:形成所述凹槽的步骤可以不包括所述第一选择离子注入、第二选择离子注入和第三选择离子注入。
所述凹槽包括:位于所述栅极结构第一侧衬底中的第一凹槽;位于所述第一凹槽底部衬底中的第二凹槽。
形成所述凹槽的步骤包括:对第一侧衬底进行第一凹槽刻蚀,在所述栅极结构第一侧衬底中形成第一凹槽,所述第一凹槽邻近所述栅极结构的侧壁为第一圆柱面,所述第一圆柱面的母线平行于栅极结构的延伸方向;对所述第一凹槽底部进行第二凹槽刻蚀,形成第二凹槽,所述第二凹槽邻近所述栅极结构的侧壁为第二圆柱面,所述第二圆柱面的母线平行于栅极结构的延伸方向。
所述第一凹槽刻蚀的步骤包括:对衬底进行第一各向异性刻蚀,在所述栅极结构第一侧衬底中形成第一各向异性凹槽;对所述第一各向异性凹槽进行第一各向同性刻蚀,在所述第一各向异性凹槽邻近所述栅极结构的侧壁中形成第一凹陷。
所述第二凹槽刻蚀的步骤包括:对衬底进行第二各向异性刻蚀,在所述栅极结构第二侧衬底中形成第二各向异性凹槽;对所述第二各向异性凹槽进行第二各向同性刻蚀,在所述第二各向异性凹槽邻近所述栅极结构的侧壁中形成第二凹陷。
在其他实施例中,所述第一凹槽刻蚀可以仅包括所述第一各向同性刻蚀。所述第二凹槽刻蚀可以仅包括所述第二各向同性刻蚀。
本实施例中,形成所述凹槽的步骤包括第一凹槽刻蚀和第二凹槽刻蚀。在其他实施例中,形成所述凹槽的步骤可以包括两次以上凹槽刻蚀步骤。
继续参考图9,本发明实施例还提供了一种隧穿场效应晶体管,包括:衬底200;位于所述衬底200上的栅极结构,所述栅极结构下方衬底200中具有沟道区,所述栅极结构包括相对的第一侧I和第二侧II;位于所述栅极结构第一侧I的衬底200中的第一源漏掺杂层241,所述第一源漏掺杂层241中具有第一源漏离子,所述第一源漏掺杂层241与所述沟道的接触面上具有凸出部;位于所述栅极结构第二侧II的衬底200中的第二源漏掺杂层220,所述第二源漏掺杂层242中具有第二源漏离子,所述第二源漏离子与所述第一源漏离子的导电类型相反。
所述第一源漏掺杂层241与所述沟道的接触面上具有多个凸出部。
本实施例中,所述凸出部在垂直于所述栅极结构延伸方向上的截面上的形状为圆弧形。
图10是本发明的隧穿场效应晶体管另一实施例的结构示意图。
请参考图10,本实施例与图9所示实施例的相同之处在此不做赘述。不同之处在于,所述凸出部在垂直于所述栅极结构延伸方向上的截面上的形状为三角形。
图11是本发明的隧穿场效应晶体管又一实施例的结构示意图。
请参考图11,本实施例与图9所示实施例的相同之处在此不做赘述。不同之处在于,所述凸出部在垂直于所述栅极结构延伸方向上的截面上的形状为矩形。
虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。
Claims (20)
1.一种隧穿场效应晶体管的形成方法,其特征在于,包括:
提供衬底;
在所述衬底上形成栅极结构,所述栅极结构下方衬底中具有沟道区,所述栅极结构包括相对的第一侧和第二侧;
在所述栅极结构第一侧的衬底中形成第一源漏掺杂层,所述第一源漏掺杂层中具有第一源漏离子,所述第一源漏掺杂层与所述衬底的沟道区的接触面上具有凸出部;
在所述栅极结构第二侧的衬底中形成第二源漏掺杂层,所述第二源漏掺杂层中具有第二源漏离子,所述第二源漏离子与所述第一源漏离子的导电类型相反。
2.如权利要求1所述的隧穿场效应晶体管的形成方法,其特征在于,所述隧穿场效应晶体管为N型晶体管;所述第一源漏离子为P型离子。
3.如权利要求1所述的隧穿场效应晶体管的形成方法,其特征在于,所述隧穿场效应晶体管为P型晶体管;所述第一源漏离子为N型离子。
4.如权利要求1所述的隧穿场效应晶体管的形成方法,其特征在于,所述第二源漏掺杂层与沟道区的接触面上具有凸出部。
5.如权利要求1所述的隧穿场效应晶体管的形成方法,其特征在于,形成所述第一源漏掺杂层的步骤包括:在所述栅极结构第一侧衬底中形成凹槽,所述凹槽邻近所述栅极结构的侧壁表面具有凹陷;在所述凹槽和所述凹陷中形成第一源漏掺杂层。
6.如权利要求5所述的隧穿场效应晶体管的形成方法,其特征在于,形成所述凹槽的步骤包括:对所述栅极结构第一侧的衬底进行多次选择离子注入,在所述栅极结构第一侧的衬底中形成掺杂结构,所述掺杂结构与所述衬底的沟道区接触面上具有凸出结构;去除所述掺杂区结构和凸出结构,在所述栅极结构第一侧衬底中形成所述凹槽。
7.如权利要求6所述的隧穿场效应晶体管的形成方法,其特征在于,对所述栅极结构第一侧的衬底进行多次选择离子注入的步骤包括:对所述栅极结构第一侧的衬底进行第一选择离子注入,在所述栅极结构第一侧的衬底中形成第一掺杂区;对所述栅极结构第一侧的衬底进行第二选择离子注入,在所述栅极结构第一侧的衬底中形成第二掺杂区,所述第一掺杂区位于所述第二掺杂区上;对所述栅极结构第一侧的衬底进行第三选择离子注入,在所述栅极结构第一侧的衬底中形成第三掺杂区,所述第二掺杂区位于所述第三掺杂区上。
8.如权利要求7所述的隧穿场效应晶体管的形成方法,其特征在于,所述第一选择离子注入之后,进行所述第二选择离子注入;或者所述第二选择离子注入之后,进行所述第一选择离子注入;
所述第二选择离子注入之后,进行所述第三选择离子注入;或者所述第三选择离子注入之后,进行所述第二选择离子注入;
所述第一选择离子注入之后,进行所述第三选择离子注入;或者,所述第三选择离子注入之后,进行所述第一选择离子注入。
9.如权利要求7所述的隧穿场效应晶体管的形成方法,其特征在于,所述第一选择离子注入的能量小于所述第二选择离子注入的能量,所述第二选择离子注入的能量小于所述第三选择离子注入的能量。
10.如权利要求9所述的隧穿场效应晶体管的形成方法,其特征在于,所述第一选择离子注入的注入参数包括:注入角度为0度~7度,注入能量为4.5KeV~5.5KeV,注入剂量为1.8E14sccm~2.2E14sccm;
所述第二选择离子注入的注入参数包括:注入角度为0度~2度,注入能量为7.2KeV~8.8KeV,注入剂量为2.7E14sccm~3.3E14sccm;
所述第三选择离子注入的注入参数包括:注入角度为0度~2度,注入能量为10.5KeV~13.5KeV,注入剂量为3.6E14sccm~4.4E14sccm。
11.如权利要求6所述的隧穿场效应晶体管的形成方法,其特征在于,所述选择离子注入的注入离子为磷离子、锗离子、砷离子、硼离子、BF2 +离子、碳离子、硅离子、锗离子或氮离子中的一种或多种组合。
12.如权利要求6所述的隧穿场效应晶体管的形成方法,其特征在于,多次选择离子注入之后,形成所述第一源漏掺杂层的步骤还包括:对所述掺杂结构进行退火处理。
13.如权利要求5所述的隧穿场效应晶体管的形成方法,其特征在于,所述凹槽包括:位于所述栅极结构第一侧衬底中的第一凹槽;位于所述第一凹槽底部衬底中的第二凹槽;
形成所述凹槽的步骤包括:对栅极结构的第一侧衬底进行第一凹槽刻蚀,在所述栅极结构第一侧衬底中形成第一凹槽,所述第一凹槽邻近所述栅极结构的侧壁为第一圆柱面,所述第一圆柱面的母线平行于栅极结构的延伸方向;对所述第一凹槽底部进行第二凹槽刻蚀,形成第二凹槽,所述第二凹槽邻近所述栅极结构的侧壁为第二圆柱面,所述第二圆柱面的母线平行于栅极结构的延伸方向。
14.如权利要求5所述的隧穿场效应晶体管的形成方法,其特征在于,去除所述掺杂结构的步骤包括:对所述掺杂结构进行第一刻蚀,在所述栅极结构第一侧衬底中形成初始凹槽;对所述初始凹槽侧壁进行第二刻蚀,在所述初始凹槽侧壁表面形成凹陷。
15.如权利要求14所述的隧穿场效应晶体管的形成方法,其特征在于,所述第一刻蚀包括各向异性干法刻蚀工艺;所述第二刻蚀包括各向同性干法刻蚀工艺或湿法刻蚀工艺。
16.如权利要求1所述的隧穿场效应晶体管的形成方法,其特征在于,形成所述第一源漏掺杂层的步骤包括:对所述栅极结构第一侧的衬底进行多次掺杂离子注入,在所述栅极结构第一侧的衬底中形成源漏结构,所述源漏结构包括多层源漏区,多层源漏区在垂直于所述衬底表面方向上层叠设置,所述源漏区与所述衬底的沟道区的接触面上具有凸出部。
17.如权利要求16所述的隧穿场效应晶体管的形成方法,其特征在于,所述掺杂离子注入的注入离子为N型离子或P型离子。
18.如权利要求17所述的隧穿场效应晶体管的形成方法,其特征在于,所述衬底的材料为硅、锗、硅锗或碳化硅,所述掺杂离子注入的注入离子为磷离子、砷离子、锑离子、硼离子或BF2 +离子。
19.一种隧穿场效应晶体管,其特征在于,包括:
衬底;
位于所述衬底上的栅极结构,所述栅极结构下方衬底中具有沟道区,所述栅极结构包括相对的第一侧和第二侧;
位于所述栅极结构第一侧的衬底中的第一源漏掺杂层,所述第一源漏掺杂层中具有第一源漏离子,所述第一源漏掺杂层与所述衬底的沟道区的接触面上具有凸出部;
位于所述栅极结构第二侧的衬底中的第二源漏掺杂层,所述第二源漏掺杂层中具有第二源漏离子,所述第二源漏离子与所述第一源漏离子的导电类型相反。
20.如权利要求19所述的隧穿场效应晶体管,其特征在于,所述凸出部在垂直于所述栅极结构延伸方向上的截面的形状为圆弧形、矩形或三角形。
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