CN109256372A - 具有dc和ac电压端子元件的功率电子子模块及其组件 - Google Patents
具有dc和ac电压端子元件的功率电子子模块及其组件 Download PDFInfo
- Publication number
- CN109256372A CN109256372A CN201810768541.7A CN201810768541A CN109256372A CN 109256372 A CN109256372 A CN 109256372A CN 201810768541 A CN201810768541 A CN 201810768541A CN 109256372 A CN109256372 A CN 109256372A
- Authority
- CN
- China
- Prior art keywords
- voltage
- voltage terminal
- submodule
- component
- clamping device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract description 9
- 238000010276 construction Methods 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 23
- 239000011888 foil Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 2
- -1 polybutylene terephthalate Polymers 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0272—Adaptations for fluid transport, e.g. channels, holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0141—Liquid crystal polymer [LCP]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/015—Fluoropolymer, e.g. polytetrafluoroethylene [PTFE]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10053—Switch
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10409—Screws
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Rectifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
本发明公开具有DC和AC电压端子元件的功率电子子模块及其组件,其包括具有基板和布置在其上的印刷导体的开关装置。子模块包含DC电压印刷导体,DC电压端子件以导电方式连接DC导体;AC电压印刷导体,AC电压端子件以导电方式连接AC导体。子模块还包括以框架布置包围开关装置的绝缘模制件。DC电压端子件由第一接触区段接合模制件的第一支撑体,且AC电压端子件由第二接触区段接合模制件的第二支撑体。为此,第一夹持装置构造成以电绝缘方式突出通过第一支撑体中的第一凹部且在DC电压端子件和相关DC电压连接件间形成导电夹持连接,第二夹持装置构造成以电绝缘方式突出通过第二支撑体中的第二凹部并在AC电压端子件和相关AC电压连接件间形成导电夹持连接。
Description
技术领域
本发明描述一种具有开关装置的功率电子子模块。开关装置的基板包含第一和第二DC电压印刷导体,第一和第二DC电压端子元件以导电方式在正确极性的情况下连接到所述第一和第二DC电压印刷导体。基板进一步包含AC电压印刷导体,AC电压端子元件以导电方式在正确极性的情况下连接到所述AC电压印刷导体。开关装置进一步包含壳体,所述壳体也可以被构造成子壳体。DC电压端子元件的功能优选是提供与电容器装置的连接,所述电容器装置被以用于电流转换器模块的中间回路电容器的形式构造。一般而言,AC电压端子元件的功能优选是提供与马达或者与电机的连接。本发明进一步描述一种组件,所述组件具有该类型的子模块或者多个该类型的子模块,并且具有用于子模块的支撑装置,所述支撑装置可以被具体构造成冷却装置。
背景技术
从现有技术,DE 102015114188A1公开一种子模块,该子模块被构造成具有基板、功率半导体元件、连接装置、端子装置和绝缘本体。基板包含相互电绝缘的印刷导体,其中功率半导体元件被布置在一个印刷导体上并且被以导电方式连接到该印刷导体。连接装置被构造成复合箔结构,并且因而构成面向功率半导体元件和基板的第一主表面和与第一主表面相反布置的第二主表面,其中子模块借助于连接装置而在内部连接在电路中。绝缘本体包括被结合到基板的一个边缘的第一子本体,并且进一步包含用于端子元件的第一凹部。绝缘本体还包括被构造成压力部件的第二子本体,并且包含第二凹部,压力元件被以突出方式布置在第二凹部中。第一子本体连接到第二子本体,使得所述第二子本体被布置成在基板的方向上相对于第一子本体移动,使得压力元件压迫复合箔结构的第二主表面的一个区段,其中该区段被布置成在功率半导体元件的垂直方向上在所述功率半导体元件的表面内突出。
发明内容
考虑到上述现有技术,本发明的目的在于公开一种具有功率转换模块的功率电子子模块,其中DC电压端子元件和AC电压端子元件被以特别有利的方式布置和构造。具体地是,该布置具有的优点在于它减轻端子元件的拉伸载荷。
根据本发明,通过具有本发明的特征的功率电子子模块和通过根据本发明所述的组件来实现该目的。实施例的优选形式被描述在相应的说明中。
根据本发明的功率电子子模块包含具有基板和布置在基板上的印刷导体的开关装置。子模块包含:第一和第二DC电压印刷导体,第一和第二DC电压端子元件以导电方式在正确极性的情况下连接到所述第一和第二DC电压印刷导体;和AC电压印刷导体,AC电压端子元件被以导电方式在正确极性的情况下连接到所述AC电压印刷导体。子模块进一步包括绝缘模制件,其以框架型布置包围开关装置。第一DC电压端子元件借助于第一接触区段与绝缘模制件的第一支撑体接合,并且AC电压端子元件借助于第二接触区段与绝缘模制件的第二支撑体接合。为此,第一夹持装置被构造成以电绝缘方式突出通过第一支撑体中的第一凹部并且在第一DC电压端子元件和相关的第一DC电压连接元件之间形成导电夹持连接,并且第二夹持装置被构造成以电绝缘方式突出通过第二支撑体中的第二凹部并且在AC电压端子元件和相关的AC电压连接元件之间形成导电夹持连接。
如果第一和第二DC电压端子元件与插入其间的绝缘装置一起至少在一个区段中构成堆叠布置,则是特别有利的。
相应的夹持装置可以被构造成具有夹持元件,优选被构造成贯穿螺栓并且优选具有弹簧装置。相应的夹持装置也可以包含绝缘套管,相关的夹持元件被引导(routed)通过绝缘套管。优选地是,壳体由包括耐高温塑料的材料组中的材料构成,特别地是由聚苯硫醚或聚对苯二甲酸丁二醇酯构成。
优选的是,DC电压端子元件和AC电压端子元件都由金属箔或片材金属构成,优选具有在300μm和2040μm之间的厚度,其中500μm和1500μm之间的厚度是特别优选的。
优选地是,第一支撑体中的第一凹部、开关装置的几何中点和第二支撑体中的第二凹部被布置在单行中。
根据本发明的组件包括上述的功率电子子模块和支撑装置,所述支撑装置被特别地构造成冷却装置。为此,相应的夹持装置,特别地是相应的螺栓被固定在支撑装置中,特别地是通过旋拧来固定,并且同时,借助于第一夹持装置,导电夹持连接被形成在第一DC电压端子元件和相关的第一DC电压连接元件之间,并且同样地是,借助于第二夹持装置,在AC电压端子元件和相关的AC电压连接元件之间形成导电夹持连接。相应的夹持装置同时减轻施加到相应的连接的拉伸载荷。
特别优选的是,同时地是,借助于第一夹持装置,在第二DC电压端子元件和相关的第二DC电压连接元件之间形成导电夹持连接。
进一步优选的是,压力装置被布置在开关装置上方,压力装置将开关装置压在支撑装置上,并且其中压力加载装置被布置在压力装置上方,其借助于夹持装置附接,使得压力因而被传递到压力装置。
可能也有利的是,具有共同的总体壳体的多个子模块构成功率模块。
自然地是,除非明确排除或本身排除,以单数描述的特征,特别地是开关装置,或者子模块的组件的上下文中描述的特征也可以以复数存在于根据本发明的子模块中或者存在于所述组件中。
应理解的是,为了获得改进,本发明的各种构造可以被执行,单独地执行或者以任何期望的组合执行。特别地是,上述特征,以及下文中认定或描述的那些特征,无论它们是否在子模块或者其组件的上下文中被描述,它们都不仅能以所指示的组合采用,而且也可以以其它的组合中或孤立地采用,而不会背离本发明的范围。
附图说明
从本发明的示例性实施例的以下描述或者从本发明的元件对本发明、有利特征和特性进行进一步阐明,本发明的示例性实施例被示意性呈现在图1至7中。
图1至4图示在侧面截面图中呈现的根据本发明的组件的第一构造的各种元件,所述组件具有根据本发明的功率电子子模块的第一构造。
图5图示在侧面截面图中呈现的根据本发明的组件的第二构造,所述组件具有根据本发明的功率电子子模块的第二构造。
图6示出功率电子子模块的三维表示。
图7示出功率电子子模块的顶视图。
具体实施方式
图1至4图示在侧面截面图中呈现的根据本发明的组件1的第一构造的各种元件,所述组件1具有根据本发明的功率电子子模块2的第一构造。图1和图2并且还有图3和4分别在局部分解视图或者在装状态中呈现相同区段。在每种情形中,功率电子子模块2呈现出具有布置在支撑装置3上的开关装置4,支撑装置3这里被构造成冷却装置,更特别地是,并且不失一般性地是,其被构造成流体冷却装置。
为了关于流体冷却装置3的电绝缘和与流体冷却装置3的热联接的目的,开关装置4包含绝缘本体40,其被构造成陶瓷本体40。该陶瓷本体40在其从流体冷却装置3转移的那一侧上包含多个印刷导体42,在开关装置的操作期间,所述多个印刷导体42处在不同电势下。这些印刷导体42中的一个,即多个DC电压印刷导体中的一个,获得DC电压电势。子模块2与开关装置4相组合构成例如功率转换电路。
在这些印刷导体42中的与绝缘本体40相组合构成开关装置4的基板的至少一个印刷导体上,功率半导体部件44被以惯常方式布置并且被连接在电路中。在该实施例中,该连接被构造成惯常复合箔结构48,其由交替堆叠的导电箔和电绝缘箔构成。
对于外部连接,该功率转换模块2(如在图1和2中呈现的)包含两个DC电压端子元件50、52,每个都被以导电方式连接到携带DC电势的DC电压电势印刷导体42中的一个。在该情形中,该连接被惯常地并且不失一般性地构造成焊接连接。
这些DC电压端子元件50、52的功能是提供与相关的DC电压连接元件60、62的连接,该相关的DC电压连接元件60、62优选被连接到电容器装置。
在DC电压端子元件50、52和DC电压连接元件60、62之间的借助于第一夹持装置7构造的连接的区域中,第一DC电压端子元件50和第二DC电压端子元件52构成堆叠,其中,在两个DC电压端子元件50、52之间,并且仅在图6中呈现的是,布置了绝缘装置54。第一DC电压端子元件50位于电流转换模块2的仅局部呈现的壳体20的支撑表面240上。在该构造中,所述壳体20仅仅被构造成子壳体,并且因而不是完全地包围开关装置4,正如可能的并且也是惯常的那样。
在该情形中,电流转换模块2的壳体20由耐高温塑料构造,在该情形中是由聚苯硫醚构造的,聚苯硫醚另外具有高的弯曲强度。DC电压端子元件50、52被构造成薄金属板,更特别地是,在该情形中,被构造成铜板或表面涂层处理的铜板,其具有700μm的厚度。DC电压端子元件50、52之间的该绝缘装置54由具有高的绝缘耐受性的塑料构造,在该情形中,其由乙烯-四氟乙烯共聚物或液晶聚合物构造,其具有100μm的厚度。
图1在横截面视图中示出第一功率电子组件1的截面,其中该截面延伸经过第一夹持装置7也位于的平面。除上述特征以外,在该情形中,第一夹持装置7和DC电压连接元件60、62被呈现在分解视图中,而图2示出在组装状态中的第一功率电子组件1。
在DC电压端子元件50、52和DC电压连接元件60、62之间的连接区域中,如所描述的那样,第一DC电压端子元件50位于壳体20的支撑表面240上,并且包含凹部500。
第二DC电压端子元件52相对于第一DC电压端子元件后退(set back),其结果是,第二DC电压端子元件与第二DC电压连接元件62的接触区域(侧向上看并且源自基板)缺少凹部500。
DC电压端子元件50、52的相应的接触区域位于从冷却装置3转移的相应侧上,而DC电压连接元件60、62的相应的接触区域每个位于面向冷却装置3的相应侧上。自然地是,在替选构造的情况下,这整个布置也可以被以镜像图像构造。
壳体20在它的第一支撑表面240的区域中包含第一凹部204,其与第一DC电压端子元件50的凹部500在z方向上对齐。在该凹部中,并且在与之对齐的进一步凹部500、620中,包括AC电压连接元件62的凹部,布置有绝缘套管74,其功能是相应电势的电绝缘,包括任何必要间隙和爬电距离。在该套管74中,布置螺栓70,螺栓70与这里被构造成盘式弹簧的弹簧装置72相组合构成第一DC电压端子元件50和第一DC电压连接元件60之间的以及同时第二DC电压端子元件52和第二DC电压连接元件62之间的导电夹持连接。为此,螺栓70被旋拧到冷却装置3中的内螺纹盲孔32中,第一夹持装置7借助于此而被固定在冷却装置中。
在该情形中,上述部件构成组件的第一夹持装置7。该构造具有多个优点。首先,关于生产技术方面,DC电压连接元件60、62相对于DC电压端子元件50、52的布置特别简单,因为堆叠的DC电压连接元件60、62仅需要布置在同样堆叠的DC电压端子元件50、52上,并且借助于单个螺纹连接来构造出具有正确极性的电连接。这里的第二个显著优点在于与冷却装置3的附接,这提供DC电压连接元件60、62的拉伸载荷的显著减轻。换言之,通过该构造,防止在基板40、42上的任何潜在的力作用。此外,由此构造的导电连接具有特别低的电感。
为了进一步的外部连接,功率转换模块2(如在图3和4中呈现的那样)包含AC电压端子元件56,其被以导电方式连接到携带AC电压的AC电压电势印刷导体46。在该情形中,该连接被惯常地并且不失一般性地构造成焊接连接。
该AC电压端子元件56的功能是提供与相关的AC电压连接元件66的连接,该相关的AC电压连接元件66优选被连接到电机。AC电压端子元件56被构造成薄金属板,更特别地是,在该情形中,其被构造成铜板或表面涂层处理的铜板,其具有700μm的厚度。
图3在横截面视图中示出第一功率电子组件1的截面,其中该截面延伸经过第二夹持装置8也位于的平面。除上述特征以外,在该情形中,第二夹持装置8和AC电压连接元件66被呈现在分解视图中,而图4示出在组装状态中的第一功率电子组件1。
在AC电压端子元件56和AC电压连接元件66之间的连接区域中,AC电压端子元件56位于壳体20的支撑表面260上,并且包含凹部560。
在该情形中,AC电压端子元件56的接触区域位于从冷却装置3转移的那一侧上(参见图6),而AC电压连接元件66的接触区域位于面向冷却装置3的那一侧上。自然地是,在替选构造的情况下,这整个布置也可以被以镜像图像构造。
壳体20在其第二支撑表面260的区域中包含第二凹部206,其与在z方向上对齐的AC电压端子元件的凹部560对齐。在包括AC电压连接元件66的凹部的与之对齐的所有凹部206、560、660中,布置有绝缘套管84。在该套管84中,布置螺栓80,螺栓80与这里被构造成盘式弹簧的弹簧装置82相组合构成AC电压端子元件56和AC电压连接元件66之间的导电夹持连接。为此,螺栓80被简单地旋拧到冷却装置3中的内螺纹盲孔34中,第二夹持装置8借助于此而被固定在冷却装置中。
在该情形中,上述部件构成组件的第二夹持装置8。该构造基本上起到上述优点的作用。
图5在侧面截面图中示出根据本发明的组件1的第二构造,所述组件具有根据本发明的功率电子子模块2的第二构造。该构造与参考图1至4描述的构造基本相同,但另外包含基本惯常的压力装置28,其包括在开关装置4的方向上突出的刚性压力部件280和弹性压力元件282。
间接地是,经由连接装置48,压力元件282施加压力到功率半导体部件44。该压力装置28的主要功能是开关装置4与冷却装置3的热连接。
为了引入该目的所需要的力,压力加载装置90被构造,其被设计用以施加压力到压力装置28的从开关装置4转移的那一侧,优选中心地施加到所述压力装置28。为此,压力加载装置90被两个夹持装置7、8固定或锚定,其中冷却装置3用作配对支承(counter-bearing)。这里,夹持装置另外被构造用以执行图1至图4中呈现的盘式弹簧72、82的弹簧动作。
第一和第二夹持装置7、8因而不仅构成端子元件50、52、54和连接元件60、62、64之间的导电连接,同时也构成子模块2和冷却装置3之间的显著导热连接。
图6示出功率电子子模块2的三维表示。基本上,子模块2的该构造与图5中呈现的构造类似,但与图5相比,其被以结构上更精确的方式呈现,而图5以更概要的方式概述设计。功率转换模块2的壳体20被呈现,其包围开关装置4,但不覆盖开关装置4。开关装置4基本上被压力装置28覆盖,压力装置28将基板40、42压在未呈现的冷却装置3上,因而与冷却装置3形成导热连接。在该情形中,为了引入压力,提供有替选压力加载装置92。这包含惯常中心螺栓,所述螺栓被旋拧到冷却装置并且经由盘式弹簧来施加压力到压力装置。
壳体20包含具有第一支撑表面240的第一联接装置24,第一DC电压端子元件50在端子区段中被布置在第一支撑表面240上。这里,如在图5中呈现的那样,具有第一DC电压连接元件的所述第一DC电压端子元件50的接触表面被以剖面线呈现。第一DC电压端子元件50进一步包含凹部500。壳体20包含与所述凹部500对齐的第一凹部204。两个凹部都被设计用以容置呈绝缘套管的形式的第一夹持装置,第一夹持装置具有穿过绝缘套管的螺栓。
绝缘装置54和第二DC电压端子元件52被直接布置在第一DC电压端子元件50上,并且与第一支撑表面240上方的该第一DC电压端子元件一起构成堆叠。该第二DC电压端子元件52则具有与第二DC电压连接元件的接触表面,其由剖面线呈现。绝缘装置54的端子区段在基板的方向上相对于第一DC电压端子元件50的端子区段后退。此外,第二DC电压端子元件52的端子区段在相同方向上相对于绝缘装置54的端子区段后退。
壳体20包含具有第二支撑表面260的第二联接装置26,AC电压端子元件56在端子区段中被布置在第二支撑表面260上。这里,如在图5中呈现的那样,具有第一AC电压连接元件的所述AC电压端子元件56的接触表面被以剖面线呈现。AC电压端子元件56进一步包含凹部560。壳体20包含与所述凹部560对齐的凹部206,如在图5中呈现的那样。两个凹部都被设计用以容置呈绝缘套管的形式的第二夹持装置,第二夹持装置具有穿过绝缘套管的螺栓。
图7示出功率电子子模块2的顶视图,其在没有壳体的情况下呈现,并且基本上具有参考图6描述的相同部件。在该情形中,明显呈现的是,第一支撑元件24的第一凹部204和与之对齐的第一DC电压端子元件50的凹部500,以及第二DC电压端子元件52的凹部520、开关装置4的几何中点400、第二支撑元件26的第二凹部206和与之对齐的AC电压端子元件56的凹部560被布置在一条虚线上。另外有利的是,根据图5的压力加载装置90在法线方向上施加压力到压力装置上,即垂直于基板40、40,并且因而与几何中点400对齐。
Claims (13)
1.一种功率电子子模块(2),其具有开关装置(4),所述开关装置(4)具有基板,并且包含:第一和第二DC电压印刷导体(42),第一和第二DC电压端子元件(50、52)被以导电方式连接到所述第一和第二DC电压印刷导体(42);和AC电压印刷导体(46),AC电压端子元件(56)被以导电方式在正确极性的情况下连接到所述AC电压印刷导体(46),并且所述功率电子子模块(2)具有绝缘模制件(20),所述绝缘模制件(20)以框架型布置将所述开关装置包围起来,
其中所述第一DC电压端子元件(50)借助于第一接触区段与所述绝缘模制件(20)的第一支撑体(204)接合,
其中所述AC电压端子元件(56)借助于第二接触区段与所述绝缘模制件(20)的第二支撑体(26)接合,
其中第一夹持装置(7)被构造成以电绝缘方式突出通过所述第一支撑体(204)中的第一凹部(500),并且在所述第一DC电压端子元件(50)和相关的第一DC电压连接元件(60)之间形成导电夹持连接,并且第二夹持装置(8)被构造成以电绝缘方式突出通过所述第二支撑体(26)中的第二凹部(206),并且在所述AC电压端子元件(56)和相关的AC电压连接元件(66)之间形成导电夹持连接。
2.根据权利要求1所述的子模块,其中所述第一和第二DC电压端子元件(50、52)与介于中间的绝缘装置(54)构成堆叠。
3.根据权利要求2所述的子模块,其中所述绝缘装置(54)由具有高的绝缘耐受性的塑料材料组中的材料构造,特别地是由聚酰胺、乙烯-四氟乙烯共聚物或液晶聚合物构造,优选具有50μm至500μm的厚度,其中75μm至150μm的厚度是特别优选的。
4.根据前述权利要求中的一项所述的子模块,其中相应的夹持装置(7、8)被构造成具有夹持元件,所述夹持元件优选被构造成贯通螺栓(70、80)并且优选具有弹簧装置(72、82)。
5.根据权利要求1-3中的一项所述的子模块,其中相应的夹持装置(7、8)包含绝缘套管(74、84),所述夹持元件(70、80)被引导通过所述绝缘套管。
6.根据权利要求1-3中的一项所述的子模块,其中所述壳体(20)由包括耐高温塑料的材料组中的材料构成,特别是由聚苯硫醚或聚对苯二甲酸丁二醇酯构成。
7.根据权利要求1-3中的一项所述的子模块,其中所述DC电压端子元件(50、52)和所述AC电压端子元件(56)被构造成金属箔或金属板,优选具有300μm至2040μm的厚度,其中500μm至1500μm的厚度是特别优选的。
8.根据权利要求1-3中的一项所述的子模块,其中所述第一支撑体(24)中的所述第一凹部(204)、所述开关装置(4)的几何中点(400)和所述第二支撑体(26)中的所述第二凹部(206)被布置在单行中。
9.一种具有根据前述权利要求中的一项所述的子模块(2)并且具有支撑装置(3)的组件(1),其中相应的夹持装置(7、8),特别地是,相应的螺栓(70、80)被固定在所述支撑装置(3)中,特别地是通过旋拧来固定,并且同时,借助于所述第一夹持装置(7),在所述第一DC电压端子元件(50)和相关的第一DC电压连接元件(60)之间形成导电夹持连接,并且借助于所述第二夹持装置(8),在所述AC电压端子元件(56)和相关的AC电压连接元件(66)之间形成导电夹持连接。
10.根据权利要求9所述的组件,其中同时地是,借助于所述第一夹持装置(7),在所述第二DC电压端子元件(52)和相关的第二DC电压连接元件(62)之间形成导电夹持连接。
11.根据权利要求9或10所述的组件,其中所述支撑装置(3)被构造成冷却装置。
12.根据权利要求9至10中的一项所述的组件,其中压力装置(28)被布置在所述开关装置(4)上方,所述压力装置(28)将所述开关装置(4)压在所述支撑装置(3)上,并且其中压力加载装置(90)被布置在所述压力装置(28)上方,所述压力加载装置(90)借助于所述第一和第二夹持装置(7、8)附接,使得压力因而被传递到所述压力装置(28)。
13.根据权利要求9至10中的一项所述的组件,其中具有共同的总体壳体的多个子模块(2)构成功率模块。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017115883.9 | 2017-07-14 | ||
DE102017115883.9A DE102017115883B4 (de) | 2017-07-14 | 2017-07-14 | Leistungselektronisches Submodul mit Gleich- und Wechselspannungsanschlusselementen und Anordnung hiermit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109256372A true CN109256372A (zh) | 2019-01-22 |
Family
ID=64745411
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810768541.7A Pending CN109256372A (zh) | 2017-07-14 | 2018-07-13 | 具有dc和ac电压端子元件的功率电子子模块及其组件 |
CN201821117335.1U Active CN209087829U (zh) | 2017-07-14 | 2018-07-13 | 功率电子子模块及其组件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201821117335.1U Active CN209087829U (zh) | 2017-07-14 | 2018-07-13 | 功率电子子模块及其组件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10270358B2 (zh) |
CN (2) | CN109256372A (zh) |
DE (1) | DE102017115883B4 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD883241S1 (en) * | 2018-06-04 | 2020-05-05 | Semikron Elektronik Gmbh & Co. Kg | Power module |
USD889423S1 (en) * | 2018-12-03 | 2020-07-07 | Semikron Elektronik Gmbh & Co. Kg | Power module |
DE102019101973A1 (de) * | 2019-01-28 | 2020-07-30 | Eugen Forschner Gmbh | Verbindungsanordnung zum Verbinden einer Stromschiene mit einem Gehäuse |
DE102019115498B4 (de) | 2019-06-07 | 2022-06-02 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul mit Gleich- und Wechselpotentialanschlussflächen und Anordnung hiermit |
DE102020104723A1 (de) | 2020-02-24 | 2021-08-26 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul zur Montage auf einer Kühleinrichtung |
DE102020111528A1 (de) | 2020-04-28 | 2021-10-28 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Anordnung mit einem Mehrphasen-Leistungshalbleitermodul |
DE102020111573B4 (de) * | 2020-04-28 | 2023-09-14 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Anordnung mit Gleichspannungsverbindungselement und Verfahren zur Herstellung |
DE102020127036A1 (de) | 2020-10-14 | 2022-04-14 | Bayerische Motoren Werke Aktiengesellschaft | Verbindungsanordnung und Verfahren zur Herstellung einer Verbindungsanordnung |
DE102021202723A1 (de) | 2021-03-19 | 2022-09-22 | Magna powertrain gmbh & co kg | Vorrichtung zur elektrischen Verbindung mit zumindest einer elektrischen Komponente |
DE102021123636B4 (de) | 2021-09-13 | 2024-01-25 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Substratanordnung, mit Leistungshalbleiterbauelementen und mit einer Folienstapelanordnung |
DE102021125216A1 (de) | 2021-09-29 | 2023-03-30 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Gleichspannungsanschlusseinrichtung |
WO2023094642A1 (de) * | 2021-11-29 | 2023-06-01 | Eugen Forschner Gmbh | Vorrichtung zum verbinden eines elektrischen bauteils mit einem davon elektrisch zu isolierenden bauteil und verbindungsanordnung mit einer solchen vorrichtung |
DE102022203300A1 (de) | 2022-04-01 | 2023-10-05 | Magna powertrain gmbh & co kg | Leistungselektronik-System |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2725952B2 (ja) * | 1992-06-30 | 1998-03-11 | 三菱電機株式会社 | 半導体パワーモジュール |
JP3813098B2 (ja) * | 2002-02-14 | 2006-08-23 | 三菱電機株式会社 | 電力用半導体モジュール |
DE102006006422A1 (de) * | 2006-02-13 | 2007-08-23 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Kontakteinrichtung |
DE102014105114B4 (de) * | 2014-04-10 | 2022-12-29 | Semikron Elektronik Gmbh & Co. Kg | Stromrichteranordnung mit Kondensatoreinrichtung |
DE102014106570B4 (de) * | 2014-05-09 | 2016-03-31 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit |
DE102014106857B4 (de) * | 2014-05-15 | 2020-11-26 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
DE102014115565B3 (de) * | 2014-10-27 | 2015-10-22 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Schalteinrichtung mit einer feuchtigkeitsdichten und elektrisch isolierenden Abdeckung und zur Herstellung einer Anordnung hiermit |
DE102015105347B4 (de) * | 2015-04-09 | 2022-03-24 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem leitstungselektronischen Bauteil und mit einer Gleichspannungsverschienung |
DE102015111204B4 (de) * | 2015-07-10 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Modul mit Lastanschlusselementen |
DE102015114188B4 (de) * | 2015-08-26 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse |
DE102016119631B4 (de) * | 2016-02-01 | 2021-11-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Druckeinleitkörper und Anordnung hiermit |
DE102016104284B4 (de) * | 2016-03-09 | 2022-05-12 | Semikron Elektronik Gmbh & Co. Kg | Gekapselte Leistungshalbleitereinrichtung mit einem Metallformkörper als erstem Anschlussleiter |
DE102016105779B3 (de) * | 2016-03-30 | 2017-04-06 | Semikron Elektronik Gmbh & Co. Kg | Drei-Level-Stromrichteranordnung und Verbindungsanordnung hierfür |
DE102016107083B4 (de) * | 2016-04-18 | 2019-05-23 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Anordnung und Fahrzeug hiermit |
DE102016112777B4 (de) * | 2016-07-12 | 2021-03-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
EP3273474A1 (de) * | 2016-07-22 | 2018-01-24 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
EP3273470A1 (de) * | 2016-07-22 | 2018-01-24 | SEMIKRON Elektronik GmbH & Co. KG | Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung |
DE102017109706B3 (de) * | 2017-05-05 | 2018-03-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Anordnung mit Gleichspannungsverbindungselement |
-
2017
- 2017-07-14 DE DE102017115883.9A patent/DE102017115883B4/de active Active
-
2018
- 2018-06-27 US US16/019,644 patent/US10270358B2/en active Active
- 2018-07-13 CN CN201810768541.7A patent/CN109256372A/zh active Pending
- 2018-07-13 CN CN201821117335.1U patent/CN209087829U/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20190020285A1 (en) | 2019-01-17 |
CN209087829U (zh) | 2019-07-09 |
DE102017115883B4 (de) | 2020-04-02 |
US10270358B2 (en) | 2019-04-23 |
DE102017115883A1 (de) | 2019-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN209087829U (zh) | 功率电子子模块及其组件 | |
CN108832797B (zh) | 具有dc电压连接元件的电力电子装置 | |
CN105097716B (zh) | 具有开关装置的功率半导体模块以及包括该功率半导体模块的布置 | |
US7369415B2 (en) | Multilayer electronic circuit device | |
US9343725B2 (en) | Bus bar module and power supply unit | |
US9698516B2 (en) | Connector | |
CN106340493A (zh) | 功率电子模块 | |
US20230115788A1 (en) | Connector | |
FI120068B (fi) | Sähköinen liitos ja sähkökomponentti | |
CN104681502B (zh) | 大功率半导体装置 | |
CN109786341B (zh) | 具有开关装置的功率半导体模块及其配置 | |
JP2014090523A (ja) | スイッチング電源装置 | |
JP6634722B2 (ja) | 絶縁ブスバーおよび製造方法 | |
JP2019075842A (ja) | 半導体モジュールユニット | |
CN108172550B (zh) | 用于电力电子开关装置的压力装置、开关装置及其配置 | |
CN106486436A (zh) | 包括多个子模块和压力装置的功率半导体模块及其布置 | |
JP2004343995A (ja) | 三次元配置された回路キャリアを有する電源回路及びその製造方法 | |
JP6265543B2 (ja) | 発電装置 | |
CN104023854B (zh) | 静电雾化装置 | |
JP5113101B2 (ja) | 電気回路の接続構造および電気回路の接続方法 | |
US9578771B2 (en) | Backplane module and method of manufacturing same | |
CN107851509A (zh) | 电容器单元和电气设备 | |
CN108122864B (zh) | 用于电力电子开关装置的压力装置、开关装置及其布置 | |
JP6872467B2 (ja) | 回路基板モジュール及びこれを備えた電源装置 | |
US20130217267A1 (en) | Connector assembly capable of sustaining large current |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |