CN109192420B - 一种高性能氧化锌电阻片的制备方法 - Google Patents
一种高性能氧化锌电阻片的制备方法 Download PDFInfo
- Publication number
- CN109192420B CN109192420B CN201810960750.1A CN201810960750A CN109192420B CN 109192420 B CN109192420 B CN 109192420B CN 201810960750 A CN201810960750 A CN 201810960750A CN 109192420 B CN109192420 B CN 109192420B
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- Prior art keywords
- zinc oxide
- resistance card
- oxide resistance
- blank
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 266
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 133
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000003292 glue Substances 0.000 claims abstract description 34
- 238000007599 discharging Methods 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 238000005507 spraying Methods 0.000 claims abstract description 9
- 238000003825 pressing Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000010304 firing Methods 0.000 claims description 30
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 25
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 25
- 239000002994 raw material Substances 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 16
- 239000011230 binding agent Substances 0.000 claims description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 239000002270 dispersing agent Substances 0.000 claims description 7
- 238000005303 weighing Methods 0.000 claims description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001923 silver oxide Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 229920000058 polyacrylate Polymers 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005469 granulation Methods 0.000 abstract description 2
- 230000003179 granulation Effects 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 229920002125 Sokalan® Polymers 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 239000004584 polyacrylic acid Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000306 component Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 229940093474 manganese carbonate Drugs 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810960750.1A CN109192420B (zh) | 2018-08-22 | 2018-08-22 | 一种高性能氧化锌电阻片的制备方法 |
Applications Claiming Priority (1)
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CN201810960750.1A CN109192420B (zh) | 2018-08-22 | 2018-08-22 | 一种高性能氧化锌电阻片的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN109192420A CN109192420A (zh) | 2019-01-11 |
CN109192420B true CN109192420B (zh) | 2020-09-29 |
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CN201810960750.1A Active CN109192420B (zh) | 2018-08-22 | 2018-08-22 | 一种高性能氧化锌电阻片的制备方法 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110078494B (zh) * | 2019-03-21 | 2022-10-04 | 全球能源互联网研究院有限公司 | 一种氧化锌电阻片及其制备方法 |
CN113045203A (zh) * | 2021-01-11 | 2021-06-29 | 四川大学 | 一种避雷器电阻片侧面釉配方 |
CN112951532B (zh) * | 2021-01-29 | 2022-11-08 | 艾瑞科电力电子科技(江苏)有限公司 | 一种高梯度电阻片及其制造方法 |
CN114400121A (zh) * | 2021-12-17 | 2022-04-26 | 南阳金牛电气有限公司 | 一种高通流密度的氧化锌电阻片的制造方法 |
CN115101278A (zh) * | 2022-07-01 | 2022-09-23 | 浙江避泰电气科技有限公司 | 一种电阻片的加工工艺 |
CN115331904A (zh) * | 2022-08-26 | 2022-11-11 | 西安西电避雷器有限责任公司 | 一种非线性金属氧化物电阻片及其制备方法 |
CN115490510A (zh) * | 2022-09-28 | 2022-12-20 | 江西百新电瓷电气有限公司 | 一种避雷器电阻片制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6422005A (en) * | 1987-07-17 | 1989-01-25 | Matsushita Electric Ind Co Ltd | Manufacture of varistor |
KR950007948B1 (ko) * | 1992-10-23 | 1995-07-21 | 서울대학교공과대학교육연구재단 | 비정상 입자성장을 이용한 저전압 바리스터 및 그 제조방법 |
CN102249666B (zh) * | 2011-05-13 | 2013-05-22 | 中国科学院宁波材料技术与工程研究所 | 一种直流氧化锌电阻片的制备方法 |
CN102515742A (zh) * | 2011-12-15 | 2012-06-27 | 中国科学院过程工程研究所 | 一种高电位梯度氧化锌压敏电阻材料及其制备方法 |
CN108409306B (zh) * | 2018-03-22 | 2020-10-13 | 华南理工大学 | 一种氧化锌压敏陶瓷材料及其制备方法 |
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2018
- 2018-08-22 CN CN201810960750.1A patent/CN109192420B/zh active Active
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Effective date of registration: 20200511 Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Applicant after: State Grid Corporation of China Applicant after: Wuhan Nari Limited Liability Company of State Grid Electric Power Research Institute Applicant after: STATE GRID ZHEJIANG ELECTRIC POWER Co. Applicant after: NARI GROUP Corp. Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Applicant before: State Grid Corporation of China Applicant before: Wuhan Nari Limited Liability Company of State Grid Electric Power Research Institute Applicant before: STATE GRID ZHEJIANG ELECTRIC POWER Co. |
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