CN109070537B - 载体释脱技术 - Google Patents

载体释脱技术 Download PDF

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Publication number
CN109070537B
CN109070537B CN201780029194.XA CN201780029194A CN109070537B CN 109070537 B CN109070537 B CN 109070537B CN 201780029194 A CN201780029194 A CN 201780029194A CN 109070537 B CN109070537 B CN 109070537B
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assembly
adhesive
carrier
carriers
adhesive element
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CN109070537A (zh
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B·魏尔德
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Fleck Innabur Technology Co ltd
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Plastic Logic Ltd
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • B32B37/0007—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality
    • B32B37/0015—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality to avoid warp or curl
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
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    • B32B2037/1253—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives curable adhesive
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Quality & Reliability (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Liquid Crystal (AREA)
  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Folding Of Thin Sheet-Like Materials, Special Discharging Devices, And Others (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Led Device Packages (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Optical Filters (AREA)
CN201780029194.XA 2016-05-11 2017-05-11 载体释脱技术 Active CN109070537B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111311652.3A CN114013119B (zh) 2016-05-11 2017-05-11 处理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1608279.4 2016-05-11
GB1608279.4A GB2554040B (en) 2016-05-11 2016-05-11 Carrier release
PCT/EP2017/061319 WO2017194672A1 (en) 2016-05-11 2017-05-11 Carrier release

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CN202111311652.3A Division CN114013119B (zh) 2016-05-11 2017-05-11 处理方法

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CN109070537A CN109070537A (zh) 2018-12-21
CN109070537B true CN109070537B (zh) 2021-11-23

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US (2) US10658401B2 (enExample)
JP (2) JP7030063B2 (enExample)
KR (2) KR102401448B1 (enExample)
CN (2) CN109070537B (enExample)
GB (2) GB2607246B (enExample)
RU (1) RU2763361C2 (enExample)
TW (2) TWI739827B (enExample)
WO (1) WO2017194672A1 (enExample)

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GB2607246B (en) * 2016-05-11 2023-03-22 Flexenable Ltd Carrier release
GB2568240B (en) * 2017-11-03 2023-01-25 Flexenable Ltd Method of producing liquid crystal devices comprising a polariser component between two lc cells
US10964582B2 (en) * 2019-06-24 2021-03-30 Palo Alto Research Center Incorporated Transfer substrate utilizing selectable surface adhesion transfer elements
GB2593418B (en) 2019-10-10 2023-12-13 Flexenable Tech Limited Liquid crystal devices

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JP2009040930A (ja) * 2007-08-10 2009-02-26 Nitto Denko Corp 被着体の剥離方法、及び、該被着体の剥離方法に使用される加熱剥離型粘着シート
CN102655119A (zh) * 2011-03-04 2012-09-05 日东电工株式会社 薄膜基板的制造方法

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JPH0722440A (ja) * 1993-07-06 1995-01-24 Toshiba Chem Corp 半導体素子の取付け方法
JPH0850282A (ja) * 1994-05-30 1996-02-20 Sanyo Electric Co Ltd 表示装置の製造方法
JP2000241822A (ja) * 1999-02-17 2000-09-08 Seiko Epson Corp 液晶パネルの製造方法
JP2000241823A (ja) * 1999-02-17 2000-09-08 Seiko Epson Corp 液晶パネルの製造方法
JP2000248243A (ja) * 1999-03-03 2000-09-12 Seiko Epson Corp 接着シート及び液晶パネルの製造方法
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