CN109065631A - 薄膜晶体管结构及其制作方法 - Google Patents

薄膜晶体管结构及其制作方法 Download PDF

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CN109065631A
CN109065631A CN201810762266.8A CN201810762266A CN109065631A CN 109065631 A CN109065631 A CN 109065631A CN 201810762266 A CN201810762266 A CN 201810762266A CN 109065631 A CN109065631 A CN 109065631A
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layer
heavily doped
doped silicon
silicon layer
active layer
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张伟彬
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/492,946 priority patent/US11063153B2/en
Priority to PCT/CN2018/122696 priority patent/WO2020010804A1/zh
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Abstract

本发明公开一种薄膜晶体管的制作方法，包含步骤︰提供一柔性基底，在所述柔性基底上形成一有源层；提供一介质层，设置于所述有源层的上方，所述介质层具有多个开口；提供一重掺杂硅层于所述多个开口内，并与所述有源层相连接，所述重掺杂硅层沿所述多个开口的一侧壁向上延伸并覆盖所述介质层的一上表面，所述重掺杂硅层形成至少一源极及至少一漏极；以及提供一金属层于所述多个开口内且于所述至少一源极及所述至少一漏极的上方并与所述至少一源极及所述至少一漏极的相连接。本发明通过有源层与其上的源极及漏极同为半导体材质，以降低源漏极的接触电阻。

Description

薄膜晶体管结构及其制作方法
技术领域
本发明是有关于一种薄膜晶体管结构，特别是有关于一种柔性有机发光显示器的薄膜晶体管结构。
背景技术
柔性有机发光显示器结构(例如，有源矩阵有机发光二极体(Active-matrixorganic light-emitting diode,AMOLED))具有自发光性、视角广、色饱和度高、高对比、驱动电压低、功耗低、反应快、重量轻、构造简单、成本低等优点，因此不需要设置背光模组。再者，柔性有机发光显示器结构可以采用非常薄的有机材料涂层及玻璃基板，因此显示器结构可以较传统显示器的厚度薄。
但现有技术通过准分子激光退火(ELA)使非晶硅再结晶形成多晶硅后，再进行掺杂后，并于其上形成金属电极。因为半导体多晶硅与金属的接触界面存在强烈的费米能级钉扎效应，使得金属与半导体接触势垒很高，使得接触电阻很大。目前增大半导体与金属接触面积是最简便有效的降低电阻的方法。但仍须发展其他降低导通电阻，以降低能耗。再者，在对非晶硅(a-Si)进行准分子激光退火时，利用激光的瞬间脉冲照射到非晶硅表面，使其溶化并重新结晶。而非晶硅在制备过程中由于杂质及缺陷等问题，而在结构上形成针孔。因此在进行准分子激光退火时，高能量的激光会透过针孔照射基底。对玻璃基底而言，可以耐受高能量的激光照射。但当使用聚合物作为柔性基底时，由于聚合物柔性基底具有较低的玻璃化温度及对紫外光的高吸收率，因而难以承受准分子激光退火的激光能量密度，可能造成下方的柔性基底破空或硬化。
然而，所述柔性有机发光显示器在实际使用上仍具有下述问题，例如：柔性有机发光显示器的导通电阻是降低能耗的关键因素。电阻往往来自于在金属与半导体接触界面的接触电阻，金属与半导体接触势垒很高，使得接触电阻很大。
故，有必要提供一种薄膜晶体管结构，以解决现有技术所存在的问题。
发明内容
有鉴于此，本发明提供一种薄膜晶体管结构，以解决现有技术所存在的接触电阻太高而造成能耗的问题。还可以解决进行准分子激光退火时，造成下方的柔性基底的破坏。
本发明的主要目的在于提供一种薄膜晶体管结构，其可以通过有源层与其上的源极及漏极同为半导体材质，使得源漏极的接触电阻降低。
本发明的次要目的在于提供一种薄膜晶体管结构，其可以解决现有技术所存在的进行准分子激光退火时，造成下方的柔性基底的破坏。
为达成本发明的前述目的，本发明的一个实施例提供一种薄膜晶体管的制作方法，所述制作方法包含步骤︰提供一柔性基底，在所述柔性基底上形成一有源层；提供一介质层，设置于所述有源层的上方，所述介质层具有多个开口；提供一重掺杂硅层于所述多个开口内，并与所述有源层相连接，所述重掺杂硅层沿所述多个开口的一侧壁向上延伸并覆盖所述介质层的一上表面，所述重掺杂硅层形成至少一源极及至少一漏极；以及提供一金属层于所述多个开口内且于所述至少一源极及所述至少一漏极的上方并与所述至少一源极及所述至少一漏极的相连接。
再者，本发明的另一个实施例提供另一种薄膜晶体管结构，包含︰一柔性基底，一有源层设置于所述柔性基底上；一介质层，设置于所述有源层的上方，所述介质层具有多个开口；一重掺杂硅层设置于所述多个开口内，并与所述有源层相连接，所述重掺杂硅层沿所述多个开口的一侧壁向上延伸并覆盖所述介质层的一上表面，所述重掺杂硅层配置为至少一源极及至少一漏极；以及一金属层设置所述多个开口内且于所述至少一源极及所述至少一漏极的上方并与所述至少一源极及所述至少一漏极的相连接。
另外，本发明的又一个实施例提供一种显示面板，包含︰一薄膜晶体管结构包含：一柔性基底，一有源层设置于所述柔性基底上；一介质层，设置于所述有源层的上方，所述介质层具有多个开口；一重掺杂硅层设置于所述多个开口内，并与所述有源层相连接，所述重掺杂硅层沿所述多个开口的一侧壁向上延伸并覆盖所述介质层的一上表面，所述重掺杂硅层配置为至少一源极及至少一漏极；以及一金属层设置所述多个开口内且于所述至少一源极及所述至少一漏极的上方并与所述至少一源极及所述至少一漏极的相连接。
在本发明的一实施例中，所述制造方法更包含：形成一栅极在所述柔性基底上；形成一第一非晶硅层于所述栅极的上方，并以所述栅极为掩膜对所述第一非晶硅层进行准分子激光退火，使所述第一非晶硅层改质以形成所述有源层，所述有源层堆叠于所述栅极的上方。
在本发明的一实施例中，所述制作方法更包含一步骤：对所述有源层进行蚀刻，使得所述有源层与所述栅极具有相同的一宽度及一图形。
在本发明的一实施例中，所述制作方法于形成一第一非晶硅层的步骤之前更包含一步骤：提供一栅极绝缘层，设置于所述栅极及所述柔性基底的上方，所述栅极绝缘层具有一平坦表面；以及所述制作方法于提供所述重掺杂硅层于所述多个开口内的步骤中更包含：将所述重掺杂硅层设置于所述平坦表面的上方，并与所述平坦表面相接触。
在本发明的一实施例中，所述重掺杂硅层与所述有源层相连接为：所述重掺杂硅层通过与所述多个开口相接触的一侧壁而与所述有源层相连接。
在本发明的一实施例中，所述有源层的一投影面积大于所述栅极的一投影面积。
在本发明的一实施例中，所述有源层具有一上表面，所述重掺杂硅层与所述有源层的所述上表面相接触。
在本发明的一实施例中，形成所述有源层的步骤更包含一步骤：对所述有源层的一部分进行一第一重掺杂处理；以及提供所述重掺杂硅层的步骤更包含一步骤：对所述重掺杂硅层进行一第二重掺杂处理。
与现有技术相比较，本发明的薄膜晶体管结构，这样不但可通过以栅极为掩膜，避免进行准分子激光退火时，造成下方的柔性基底的破坏。还可以通过有源层与其上的源极及漏极同为半导体材质，使得源漏极的接触电阻降低。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，除非另有明确说明，不然在附图中为相同或至少具有相同功能的元件、特征及信号皆提供相同的参考标号，详细说明如下：
附图说明
图1是本发明第一实施例薄膜晶体管的制作方法示意图。
图2是本发明第一实施例薄膜晶体管结构的剖视示意图。
图3是本发明第二实施例薄膜晶体管结构的剖视示意图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
本文所使用的单数型式“一”、“一个”及“至少一”包括复数形式，除非上下文另有明确规定。例如，术语“一栅极”或“至少一栅极”可以包括多个栅极。
请参照图1所示，本发明第一实施例的薄膜晶体管的制作方法，主要包含以下步骤︰
步骤S11：提供一柔性基底120，在所述柔性基底120上形成一有源层151；
步骤S12：提供一介质层150，设置于所述有源层151的上方，所述介质层150具有多个开口154；
步骤S13：提供一重掺杂硅层于所述多个开口154内，并与所述有源层151相连接，所述重掺杂硅层沿所述多个开口154的一侧壁向上延伸并覆盖所述介质层150的一上表面，所述重掺杂硅层形成至少一源极152及至少一漏极153；以及
步骤S14：提供一金属层于所述多个开口154内且于所述至少一源极152及所述至少一漏极153的上方并与所述至少一源极152及所述至少一漏极153的相连接。
本发明将于下文利用图1至2逐一详细说明第一实施例上述各元件的细部构造、组装关系及其运作原理。
请参照图2所示，并参照图1的步骤S11所示，本发明第一实施例的提供一基板110，所述基板110可以为一玻璃基板，在所述基板上提供有一柔性基底120，所述柔性基底120的材料可以为但不限于聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)、聚醚醚酮(PEEK)、聚醚砜(PES)等。在所述柔性基底120上提供有一缓冲层130，所述缓冲层130的材料可以为氧化硅、氮化硅或二者的组合。接着，在所述柔性基底及所述缓冲层130上形成一栅极141，所述栅极141可以通过沉积并图案化形成，例如通过物理气相沉积法、化学气相沉积法或是电浆辅助化学气相沉积法。接着，在所述栅极141上形成一栅极绝缘层140，所述栅极绝缘层140为一无机绝缘层或者一有机绝缘层，所述无机绝缘层为二氧化硅、氮化硅等，所述有机绝缘层为聚乙烯吡咯烷酮、聚酰亚胺、丙烯等。所述栅极绝缘层140为一无机绝缘层时，采用电浆辅助化学气相沉积法(PECVD)形成。
请参照图2所示，形成一第一非晶硅层于所述栅极141的上方，并对所述第一非晶硅层进行准分子激光退火，使所述第一非晶硅层改质以形成一第一多晶硅层。接着，对所述第一多晶硅层进行一沟道掺杂及一第一重掺杂处理，以形成一沟道掺杂区151c、一第一重掺杂硅层的源极部分152a及一第一重掺杂硅层的漏极153a，并通过蚀刻部分所述第一多晶硅层以进行一图案化工艺，以形成一有源层151。在本实施例中，所述有源层151的一投影面积大于所述栅极141的一投影面积。因此，在对所述第一非晶硅层进行准分子激光退火的步骤时，可以使用所述栅极141为一掩膜保护所述柔性基底120，避免造成下方的所述柔性基底120的破坏。在本实施例中，所述有源层151具有一上表面，一第二重掺杂硅层与所述有源层151的所述上表面相接触。在本实施例中，所述第一重掺杂硅层的源极部分152a及所述第一重掺杂硅层的漏极153a使用n型掺杂剂(例如含有磷或砷)进行掺杂，使得所述第一重掺杂硅层的源极部分152a及所述第一重掺杂硅层的漏极153a形成n型半导体。于本实施例中，所述有源层151堆叠于所述栅极141的上方。在一个非限制性的实施例中，所述栅极141堆叠于所述有源层151的上方。
请参照图2所示，并参照图1的步骤S12所示，提供一介质层150，设置于所述有源层151的上方，所述介质层150具有多个开口154。
请参照图2所示，并参照图1的步骤S13所示，提供一第二重掺杂硅层于所述多个开口154内，并与所述有源层151相连接，所述第二重掺杂硅层沿所述多个开口154的一侧壁155向上延伸并覆盖所述介质层150的一上表面156，所述第一及第二重掺杂硅层形成至少一源极152及至少一漏极153。在一个实施例中，提供所述第二重掺杂硅层的一源极部分152b及一漏极部分153b于所述多个开口154内，并与所述有源层151相连接，所述提供一第二重掺杂硅层于所述多个开口154内的步骤系包含：提供一第二非晶硅层或一第二多晶硅层，接着对所述第二非晶硅层或所述第二多晶硅层进行一第二重掺杂处理，使得所述第二非晶硅层或所述第二多晶硅层形成一第二重掺杂硅层。接着，对所述第二重掺杂硅层进行图案化工艺，使得所述第二重掺杂硅层形成所述第二重掺杂硅层的所述源极部分152b及所述漏极部分153b。在本实施例中，所述第二重掺杂硅层的所述源极部分152b及所述漏极部分153b使用n型掺杂剂(例如含有磷或砷)进行掺杂，使得所述源极部分152b及漏极部分153b形成n型半导体。所述第一重掺杂硅层的所述源极部分152a及所述第二重掺杂硅层的所述源极部分152b共同构成所述源极152，所述第一重掺杂硅层的漏极部分153a及所述第二重掺杂硅层的所述漏极部分153b共同构成所述漏极153。
请参照图2所示，并参照图1的步骤S14所示，提供一金属层，对所述金属层进行图案化工艺，使得所述金属层形成所述金属层的一源极部分152c及一漏极部分153c于所述多个开口154内且于所述第二重掺杂硅层的所述源极部分152b及所述漏极部分153b的上方。在一个实施例中，所述金属层的所述源极部分152c及所述漏极部分153c与所述第一及第二重掺杂硅层的所述源极部分152a、152b及所述漏极部分153a、153b共同形成一源极152及一漏极153。接着，于所述源极152及所述漏极153上方形成一平坦层160，及于所述平坦层160上方形成一电极层161。在本实施例中，所述电极层161为一阳极金属层。于所述电极层161上形成一像素定义层170，并于所述像素定义层170上形成一光阻间隙物171、172。
如此，半导体与半导体接触势垒相对于金属与半导体接触势垒低，使得接触电阻变小，且所述第二重掺杂硅层的所述源极部分152b及所述漏极部分153b于所述多个开口154内，并与所述有源层151相连接，所述第二重掺杂硅层的所述源极部分152b及所述漏极部分153b沿所述多个开口154的所述侧壁155向上延伸并覆盖所述介质层的所述上表面156，如此可以加大接触面积，以降低接触电阻。
请参照图3所示，本发明第二实施例的薄膜晶体管的制作方法相似于本发明第一实施例，并大致沿用相同元件名称及图号，但第二实施例的差异在于：所述制作方法于形成一第一非晶硅层的步骤之前更包含一步骤：提供一栅极绝缘层140，设置于所述栅极141及所述柔性基底120的上方，所述栅极绝缘层140具有一平坦表面142；以及所述制作方法于提供所述重掺杂硅层于所述多个开口154内的步骤中更包含：将所述重掺杂硅层的所述源极部分152b及所述漏极部分153b设置于所述平坦表面142的上方，并与所述平坦表面142相接触。通过蚀刻部分所述第一多晶硅层以进行一图案化工艺，以形成一有源层151。所述制作方法更包含一步骤：对所述有源层151进行蚀刻，使得所述有源层151的所述沟道掺杂区151c与所述栅极141具有相同的一宽度及一图形。在本发实施例中，所述重掺杂硅层与所述有源层151相连接为：所述重掺杂硅层通过与所述多个开口154相接触的一侧壁157而与所述有源层151相连接。
所述第二实施例的薄膜晶体管结构减少了第一重掺杂处理步骤。上述特征的优点在于：相对地简化制造工艺。因此，不但可降低生产成本，并可节省制造时间，因而进一步相对增加制造效率。
请参照图2所示，本发明的另一个实施例提供另一种薄膜晶体管结构，包含︰一基板110，所述基板110可以为一玻璃基板，在所述基板上具有一柔性基底120，所述柔性基底120的材料可以为但不限于聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)、聚醚醚酮(PEEK)、聚醚砜(PES)等。在所述柔性基底120上具有一缓冲层130，所述缓冲层130的材料可以为氧化硅、氮化硅或二者的组合。所述柔性基底及所述缓冲层130上具有一栅极141。在所述栅极141上具有一栅极绝缘层140，所述栅极绝缘层140为一无机绝缘层或者一有机绝缘层，所述无机绝缘层为二氧化硅、氮化硅等，所述有机绝缘层为聚乙烯吡咯烷酮、聚酰亚胺、丙烯等。一有源层151，堆叠于所述栅极141的上方，具有一沟道掺杂区151c、一第一重掺杂硅层的源极部分152a及一第一重掺杂硅层的漏极部分153a。在本实施例中，所述有源层151的一投影面积大于所述栅极141的一投影面积。在本实施例中，所述有源层151具有一上表面，一第二重掺杂硅层与所述有源层的所述上表面相接触。在本实施例中，所述第一重掺杂硅层的源极部分152a及所述第一重掺杂硅层的漏极部分153a是n型半导体。一介质层150，设置于所述有源层151的上方，所述介质层150具有多个开口154。所述第二重掺杂硅层具有一源极部分152b及一漏极部分153b于所述多个开口154内，并与所述有源层151相连接，所述第二重掺杂硅层沿所述多个开口154的一侧壁155向上延伸并覆盖所述介质层的一上表面156。在本实施例中，所述源极部分152b及漏极部分153b为n型半导体。一金属层的一源极部分152c及一漏极部分153c于所述多个开口154内且于所述第二重掺杂硅层的所述源极部分152b及所述漏极部分153b的上方，所述金属层的所述源极部分152c及所述漏极部分153c与所述重掺杂硅层的所述源极部分152b及所述漏极部分153b共同形成一源极152及一漏极153。所述源极152及所述漏极153上方具有一平坦层160，及于所述平坦层160上方具有一电极层161。在本实施例中，所述电极层161为一阳极金属层。于所述电极层161上具有一像素定义层170，并于所述像素定义层170上设置一光阻间隙物171、172。
请参照图3所示，本发明的又一个实施例提供又一种薄膜晶体管结构，但差异在于：所述栅极绝缘层140具有一平坦表面142；将所述重掺杂硅层的所述源极部分152b及所述漏极部分153b直接设置于所述平坦表面142的上方，并与所述平坦表面142相接触。在本实施例中，仅设置一沟道掺杂区151c，而不具有所述第一重掺杂硅层的源极部分152a及所述第一重掺杂硅层的漏极部分153a。所述有源层151的所述沟道掺杂区151c与所述栅极141具有相同的一宽度及一图形。所述重掺杂硅层的所述源极部分152b及所述漏极部分153b通过与所述多个开口154相接触的一侧壁157而与所述有源层151相连接。
如上所述，相较于现有薄膜晶体管结构虽能增大半导体与金属接触面积，却也常于半导体多晶硅与金属的接触界面存在强烈的费米能级钉扎效应，使得金属与半导体接触势垒很高，使得，而导致无法接触电阻很大等缺点，本发明薄膜晶体管结构通过在所述有源层与其上的所述源极及所述漏极同为半导体材质，使得所述源漏极的接触电阻降低，其确实可以有效降低接触电阻，进而提高减少能耗，且解决现有技术所存在的进行准分子激光退火时，造成下方的柔性基底的破坏。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
虽然本发明的具体实施例在本文中已经有说明及描述，但应理解的是，通过本技术领域的技术人员可利用存在的各种替代和/或等效的方式实现。应当认识到，所述示例性实施例或示例性实施例仅作为示例，并不会限制其范围、适用性或配置。相反地，前面的概述及详细描述在至少一个示例性实施例中实施而为本领域的技术人员提供方便的指示，可理解的是，在不脱离所附属的权利要求及其合法规定的范围下，一个示例性实施例中描述的元件的功能及设置可以作出各种改变，在一般情况下，本申请案涵盖本文所讨论的具体实施例的任何修改或变更。

Claims (10)

1.一种薄膜晶体管的制作方法，其特征在于：所述制作方法包含步骤︰
提供一柔性基底，在所述柔性基底上形成一有源层；
提供一介质层，设置于所述有源层的上方，所述介质层具有多个开口；
提供一重掺杂硅层于所述多个开口内，并与所述有源层相连接，所述重掺杂硅层沿所述多个开口的一侧壁向上延伸并覆盖所述介质层的一上表面，所述重掺杂硅层形成至少一源极及至少一漏极；以及
提供一金属层于所述多个开口内且于所述至少一源极及所述至少一漏极的上方并与所述至少一源极及所述至少一漏极的相连接。
2.如权利要求1所述的薄膜晶体管的制作方法，其特征在于，所述制造方法更包含：形成一栅极在所述柔性基底上；形成一第一非晶硅层于所述栅极的上方，并以所述栅极为掩膜对所述第一非晶硅层进行准分子激光退火，使所述第一非晶硅层改质以形成所述有源层，所述有源层堆叠于所述栅极的上方。
3.如权利要求1所述的薄膜晶体管的制作方法，其特征在于，所述制作方法更包含一步骤：对所述有源层进行蚀刻，使得所述有源层与所述栅极具有相同的一宽度及一图形。
4.如权利要求3所述的薄膜晶体管的制作方法，其特征在于，所述制作方法于形成一第一非晶硅层的步骤之前更包含一步骤：提供一栅极绝缘层，设置于所述栅极及所述柔性基底的上方，所述栅极绝缘层具有一平坦表面；以及所述制作方法于提供所述重掺杂硅层于所述多个开口内的步骤中更包含：将所述重掺杂硅层设置于所述平坦表面的上方，并与所述平坦表面相接触。
5.如权利要求4所述的薄膜晶体管的制作方法，其特征在于：所述重掺杂硅层与所述有源层相连接为：所述重掺杂硅层通过与所述多个开口相接触的一侧壁而与所述有源层相连接。
6.如权利要求1所述的薄膜晶体管的制作方法，其特征在于：所述有源层的一投影面积大于所述栅极的一投影面积。
7.如权利要求6所述的薄膜晶体管的制作方法，其特征在于：所述有源层具有一上表面，所述重掺杂硅层与所述有源层的所述上表面相接触。
8.如权利要求7所述的薄膜晶体管的制作方法，其特征在于，形成所述有源层的步骤更包含一步骤：对所述有源层的一部分进行一第一重掺杂处理；以及提供所述重掺杂硅层的步骤更包含一步骤：对所述重掺杂硅层进行一第二重掺杂处理。
9.一种薄膜晶体管结构，其特征在于：所述薄膜晶体管结构包含︰
一柔性基底，一有源层设置于所述柔性基底上；
一介质层，设置于所述有源层的上方，所述介质层具有多个开口；
一重掺杂硅层设置于所述多个开口内，并与所述有源层相连接，所述重掺杂硅层沿所述多个开口的一侧壁向上延伸并覆盖所述介质层的一上表面，所述重掺杂硅层配置为至少一源极及至少一漏极；以及
一金属层设置所述多个开口内且于所述至少一源极及所述至少一漏极的上方并与所述至少一源极及所述至少一漏极的相连接。
10.一种显示面板，其特征在于：所述显示面板包含︰
一薄膜晶体管结构包含：
一柔性基底，一有源层设置于所述柔性基底上；
一介质层，设置于所述有源层的上方，所述介质层具有多个开口；
一重掺杂硅层设置于所述多个开口内，并与所述有源层相连接，所述重掺杂硅层沿所述多个开口的一侧壁向上延伸并覆盖所述介质层的一上表面，所述重掺杂硅层配置为至少一源极及至少一漏极；以及
一金属层设置所述多个开口内且于所述至少一源极及所述至少一漏极的上方并与所述至少一源极及所述至少一漏极的相连接。
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