CN108874306B - 用于支持数据缓冲器的内部dq终结的存储器系统 - Google Patents

用于支持数据缓冲器的内部dq终结的存储器系统 Download PDF

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Publication number
CN108874306B
CN108874306B CN201810329996.9A CN201810329996A CN108874306B CN 108874306 B CN108874306 B CN 108874306B CN 201810329996 A CN201810329996 A CN 201810329996A CN 108874306 B CN108874306 B CN 108874306B
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memory module
internal
data
memory
termination
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CN108874306A (zh
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林璇渶
申熙钟
崔仁寿
李荣镐
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020170102574A external-priority patent/KR102400102B1/ko
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/40—Bus structure
    • G06F13/4063—Device-to-bus coupling
    • G06F13/4068—Electrical coupling
    • G06F13/4086—Bus impedance matching, e.g. termination
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0656—Data buffering arrangements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System (AREA)
CN201810329996.9A 2017-05-11 2018-04-13 用于支持数据缓冲器的内部dq终结的存储器系统 Active CN108874306B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2017-0058904 2017-05-11
KR20170058904 2017-05-11
KR10-2017-0102574 2017-08-11
KR1020170102574A KR102400102B1 (ko) 2017-05-11 2017-08-11 데이터 버퍼의 내부 데이터(dq) 터미네이션을 지원하는 메모리 시스템

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CN108874306A CN108874306A (zh) 2018-11-23
CN108874306B true CN108874306B (zh) 2022-08-16

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US (2) US10496584B2 (enExample)
JP (1) JP7173751B2 (enExample)
CN (1) CN108874306B (enExample)
DE (1) DE102018106863A1 (enExample)

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US11537521B2 (en) * 2019-06-05 2022-12-27 Samsung Electronics Co., Ltd. Non-volatile dual inline memory module (NVDIMM) for supporting dram cache mode and operation method of NVDIMM
CN120469946A (zh) * 2019-11-15 2025-08-12 安徽寒武纪信息科技有限公司 一种存储器以及包括该存储器的设备
CN111045955B (zh) * 2019-12-16 2023-09-22 瓴盛科技有限公司 架构动态配置的存储装置及其操作方法及电子设备
CN113360430B (zh) * 2021-06-22 2022-09-09 中国科学技术大学 动态随机存取存储器系统通信架构
US20250245145A1 (en) * 2024-01-29 2025-07-31 Western Digital Technologies, Inc. Non-target on-die termination

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US10684979B2 (en) 2020-06-16
US20180329850A1 (en) 2018-11-15
DE102018106863A1 (de) 2018-11-15
JP2018190401A (ja) 2018-11-29
JP7173751B2 (ja) 2022-11-16
US20200065289A1 (en) 2020-02-27
CN108874306A (zh) 2018-11-23
US10496584B2 (en) 2019-12-03

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