CN108857136A - 焊料合金和使用其的接合结构体 - Google Patents

焊料合金和使用其的接合结构体 Download PDF

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Publication number
CN108857136A
CN108857136A CN201810412732.XA CN201810412732A CN108857136A CN 108857136 A CN108857136 A CN 108857136A CN 201810412732 A CN201810412732 A CN 201810412732A CN 108857136 A CN108857136 A CN 108857136A
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China
Prior art keywords
containing ratio
alloy
solder alloy
solder
hereinafter
Prior art date
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CN201810412732.XA
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English (en)
Inventor
酒井树
酒井一树
古泽彰男
北浦秀敏
日根清裕
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of CN108857136A publication Critical patent/CN108857136A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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Abstract

一种焊料合金，其中，Sb的含有率为3wt％以上且30wt％以下，Te的含有率为0.01wt％以上且1.5wt％以下，Au的含有率为0.005wt％以上且1wt％以下，所述焊料合金包含Ag和Cu中的至少一者，Ag和Cu中的至少一者的含有率为0.1wt％以上且20wt％以下，并且Ag与Cu的含有率之和为0.1wt％以上且20wt％以下，余量为Sn。

Description

焊料合金和使用其的接合结构体
技术领域
本发明涉及用于电源模块等的焊料合金和使用其的接合结构体。
背景技术
作为现有的焊料合金和使用其的接合结构体，例如日本特许第4147875号中记载了一种钎料和使用该钎料组装而成的半导体装置，所述钎料的特征在于，其包含5质量％以上且20质量％以下的Sb、0.01质量％以上且5质量％以下的Te，余量由Sn、任意的添加物和不可避免的杂质组成。
发明内容
日本特许第4147875号中记载的焊料合金通过向Sn中添加Te、Ag、Cu、Fe、Ni而提高了接合可靠性，但其温度循环试验仅实施到500个循环。因此，就需要能够耐受1000个循环以上的温度循环试验这一程度的可靠性的车载等目的而言，其接合可靠性有可能不充分。本发明是为了解决上述现有课题而进行的，其目的在于，提供使焊料接合部的耐裂纹性提高、实现高可靠性的焊料合金。
本发明的焊料合金中，Sb的含有率为3wt％以上且30wt％以下，Te的含有率为0.01wt％以上且1.5wt％以下，Au的含有率为0.005wt％以上且1wt％以下，Ag和Cu中的至少一种元素的含有率为0.1wt％以上且20wt％以下，并且，Ag与Cu的含有率之和为0.1wt％以上且20wt％以下，余量为Sn。
根据本发明，可提供使焊料接合部的耐裂纹性提高、实现高可靠性的焊料合金、以及使用其的接合结构体。
附图说明
图1是本发明的一个实施方式中的接合结构体的制造方法的说明图。
图2是本发明的一个实施方式中的接合结构体的说明图。
具体实施方式
在说明实施方式之前，先简单说明现有的问题点。
日本特许第4147875号中记载的焊料合金通过向Sn中添加Te、Ag、Cu、Fe、Ni而提高了接合可靠性，但其温度循环试验仅实施到500个循环。因此，就需要能够耐受1000个循环以上的温度循环试验这一程度的可靠性的车载等目的而言，其接合可靠性有可能不充分。本发明是为了解决上述现有课题而进行的，其目的在于，提供使焊料接合部的耐裂纹性提高、实现高可靠性的焊料合金。
本发明的焊料合金中，Sb的含有率为3wt％以上且30wt％以下，Te的含有率为0.01wt％以上且1.5wt％以下，并且，Au的含有率为0.005wt％以上且1wt％以下，所述焊料合金包含Ag和Cu中的至少一者，Ag和Cu中的至少一者的含有率为0.1wt％以上且20wt％以下，并且，Ag与Cu的含有率之和为0.1wt％以上且20wt％以下，余量为Sn。
本说明书中，“含有率”是指各元素的重量相对于焊料合金整体的重量的比例，使用wt％(重量百分比)的单位来表示。
本说明书中，“焊料合金”是指：在其金属组成实质上由列举的金属构成的条件下，也可以包含不可避免地混入的微量金属(例如小于0.005wt％)。焊料合金可以具有任意的形态，例如可以单独用于焊接，或者与除了金属之外的其它成分(例如助焊剂等)一同用于焊接。
本发明的焊料合金中，以具有规定含有率的方式添加了Te，因此因Te在Sn中固溶而发生伸长率的提高。进而，本发明的焊料合金中，以具有规定含有率的方式添加了Te和Au这两者，因此在高温下，离子半径不同的Au与固溶于Sn的Te复杂地进行置换，并产生位错，从而发生高温下的伸长率的提高。因此，本发明的焊料合金与仅添加Te的SnSb系焊料相比，具有高温下的更优异的伸长率。由此，能够吸收在热循环时产生的反复应力，从而能够实现接合结构体的高可靠性。此外，本发明的焊料合金包含Ag和Cu中的至少一者，因此析出Ag与Sn的金属间化合物或者Cu与Sn的金属间化合物。由于金属间化合物析出而使接合强度提高，能够实现接合结构体的高可靠性。
一个实施方式的接合结构体中，半导体元件与电路基板借助焊料接合层进行了接合，所述焊料接合层包含Sb、Te、Au、选自Ag和Cu中的至少一者、以及Sn，在半导体元件的金属层与焊料接合层的界面处、以及电路基板的镀层与焊料接合层的界面处形成有SnNi合金或SnCu合金。
由于上述实施方式的接合结构体的焊料接合层包含Te和Au，因此高温和室温下的伸长率得以改善，热循环中的耐裂纹性优异。因此，本发明的接合结构体可实现高可靠性。
以下，针对本发明的焊料合金的实施方式，使用附图进行说明。
<焊料合金105>
焊料合金105是包含Sb、Te、Au、选自Ag和Cu中的至少一者，且余量为Sn的合金。
焊料合金105中的Sb的含有率为3wt％以上且30wt％以下。通过使焊料合金中的Sb的含有率处于这样的范围，能够改善焊料接合部的热疲劳特性。此外，通过使焊料合金105中的Sb的含有率为15wt％以上且30wt％以下，能够有效地发生Sb在Sn中的固溶，能够有效地改善焊料合金105的强度和伸长率。
焊料合金105中的Te的含有率为0.01wt％以上且1.5wt％以下，Au的含有率为0.005wt％以上且1wt％以下，余量为Sn。此处，焊料合金105中的Au也可通过对包含Sb、Te、选自Ag和Cu中的至少一者且余量为Sn的焊料合金105的表面实施镀敷来提供。这种情况下，在焊料合金105熔融时，Au熔入至焊料合金105。本发明的焊料合金中，以具有规定含有率的方式添加了Te和Au这两者，因此在高温下，离子半径不同的Au与固溶于Sn的Te复杂地进行置换，并产生位错，由此产生高温下的伸长率的提高。因此，本发明的焊料合金与仅添加Te的SnSb系焊料相比，具有高温下的更优异的伸长率。因此，能够吸收在热循环时产生的反复应力，使耐裂纹性提高，从而能够实现接合结构体的高可靠性。
此外，焊料合金105中的选自Ag和Cu中的至少一者的含有率为0.1wt％以上且20wt％以下，更优选为1wt％以上且15wt％以下，并且Ag与Cu的含有率之和处于0.1wt％以上且20wt％以下的范围。通过使Ag和Cu中的至少一者的含有率为0.1wt％以上且20wt％以下，能够使Ag与Sn的金属间化合物或者Cu与Sn的金属间化合物有效地析出。由此，能够提高焊料合金的接合强度，能够实现接合结构体的高可靠性。此外，通过使Ag和Cu中的至少一者处于这样的范围，Ag与Sn的金属间化合物或者Cu与Sn的金属间化合物促进固溶于Sn的Te、Sb和Au等的转移，因此与仅添加Te的情况相比，能够提高焊料合金在高温下的伸长率。此外，通过使Ag和Cu中的至少一者处于这样的范围，会析出Ag与Sn的金属间化合物Ag3Sn或者Cu与Sn的金属间化合物Cu6Sn5，因此能够提高高温下的强度、提高耐裂纹性。
焊料合金105的尺寸可因所制造的接合结构体而异，例如可以使用10mm见方、具有0.05mm以上且0.5mm以下的厚度的焊料合金105。通过使焊料合金105的厚度为0.5mm以下，所形成的焊料接合部的热阻不会变高，能够使半导体元件101的热高效地逸散。通过使焊料合金105的厚度为0.05mm以上，能够抑制焊料接合时产生空隙，能够降低焊料接合部的热阻。
接下来，针对本发明的实施方式的接合结构体，使用附图进行说明。
<半导体元件101>
图1中，半导体元件101包含：硅芯片102、形成于硅芯片102的下表面的电阻层103、以及形成于电阻层103的下表面的金属层104。从制造容易性出发，硅芯片102优选纵向长度为10mm、横向长度为10mm，且具有0.2mm的厚度，但不限定于此，可以具有各种尺寸。
半导体元件101的电阻层103是由任意的纯金属或合金形成的层，例如可以使用Ti、Al、Cr、Ni、或者包含这些金属的合金等，但不限定于它们。通过在电阻层中使用上述金属，可得到适当的电阻性接合。电阻层103的厚度没有特别限定，可以为例如0.05μm以上且0.5μm以下，可以为例如0.1μm。通过使电阻层103具有这样的厚度，容易确保电阻值和接合可靠性。
半导体元件101的金属层104是由任意的纯金属或合金形成的层，例如可以使用Ni、Cu或者包含这些金属的合金等，但不限定于它们。金属层104的厚度没有特别限定，可以为例如0.5μm以上且10μm以下，可以为例如1μm。通过使金属层104具有这样的厚度，能够使其与焊料合金牢固地接合。
<电路基板106>
电路基板106包含：引线框107和形成于引线框107的表面的镀层108。
电路基板106的引线框107的材料可以使用金属或陶瓷等导热性良好的材料。作为引线框107的材料，例如可以使用铜、铝、氧化铝、氮化铝、氮化硅等，但不限定于此。从制造容易性出发，引线框107优选纵向长度为20mm、横向长度为20mm，且具有1mm的厚度，但不限定于此，可以具有各种尺寸。
电路基板106的镀层108是由任意的纯金属或合金形成的层，例如可以使用Ni、Cu或者包含这些金属的合金等，但不限定于它们。镀层的厚度没有特别限定，可以为例如0.5μm以上且10μm以下，可以为例如1μm。通过使镀层具有这样的厚度，能够使其与焊料合金牢固地接合。
<接合结构体201>
使用本发明的焊料合金制造的接合结构体201在图2中用示意图表示。接合结构体201具有半导体元件101与电路基板106借助合金层202和焊料接合层203进行接合而得到的结构。
为了制造接合结构体201，如图1所示，在电路基板106的镀层108上载置焊料合金105，进而以焊料合金105与半导体元件101的金属层104相接的方式，在焊料合金105上设置半导体元件101。接下来，一边使温度每分钟升高10℃，一边从室温加热至300℃为止，在300℃保持1分钟后，一边使温度每分钟降低10℃，一边从300℃冷却至室温为止，由此能够在焊料合金105与金属层104和镀层108之间形成合金层202，制造图2所示的接合结构体201。
接合结构体201的合金层202是在上述那样的接合结构体的制造过程中，在半导体元件的金属层104与焊料接合层203的界面处、以及电路基板的镀层108与焊料接合层203的界面处形成的金属间化合物。在金属层104和镀层108包含Ni或Cu的情况下，合金层202包含SnNi合金或SnCu合金。通过在金属层104与焊料接合层203之间的合金层202、以及电路基板的镀层108与焊料接合层203之间的合金层202形成SnNi合金或SnCu合金，从而金属层104与焊料接合层203、以及电路基板的镀层108与焊料接合层203借助金属而进行接合，能够得到良好的接合强度。合金层202可包含的SnNi合金和SnCu合金中可以包含Te和Au中的至少一者，通过在SnNi合金和SnCu合金中包含Te和Au中的至少一者，合金层202成为多元合金，合金的强度提高，即使在因热循环等而施加应力时，也能够抑制合金层202产生裂纹。接合结构体201的焊料接合层203中包含焊料合金105所含的Sb、Te、Au、Ag、Cu等金属元素，具有与接合前的焊料合金105大致相同的组成，但焊料接合层203中的Sn含有率按照形成合金层202时Sn发生了反应的比例而降低。
实施例
(实施例1)
如表1所示，变更Sb含有率、Te含有率、Au含有率、Ag含有率、Cu含有率，并将余量没为Sn来准备多个焊料合金105，在125℃的气氛温度中进行拉伸试验。为了进行拉伸试验，制作了将焊料合金浇铸成哑铃形状而得到的评价样品。评价样品的形状如下设定：固定于拉伸试验的部分为直径6mm、长度20mm，哑铃的缩颈部分为直径3mm、长度20mm。将拉伸试验机的上下样品固定夹具的间隔设定为20mm，并固定评价样品，将气氛温度设为200℃后，以仅对评价样品施加轴向的力的方式用拉伸试验机拉伸评价样品，从而进行评价样品的拉伸试验。
评价样品的拉伸强度(MPa)是指：对于试验前的固定夹具的间隔20mm，以2.0×10-4/s的形变速度实施拉伸试验时，与试验中施加的最大的力对应的应力。
评价样品的伸长率(％)是指：拉伸试验中评价样品发生断裂时的固定夹具的间隔相对于试验前的固定夹具的间隔20mm的增加量的比例。例如，评价样品发生断裂时的固定夹具的间隔为40mm的情况下，伸长率为(40-20)/20×100＝100(％)。
将拉伸试验中的拉伸强度(MPa)和伸长率(％)的测定结果一并示于表1。
[表1]
实施例1-1和实施例1-2是不含Cu但包含Ag的本发明的焊料合金。实施例1-1的Sb含有率为3wt％、Te含有率为0.01wt％、Au含有率为0.005wt％、Ag的含有率为0.1wt％。实施例1-2的Sb含有率为30wt％、Te含有率为1.5wt％、Au含有率为1wt％、Ag的含有率为20wt％。实施例1-1中，强度为30MPa，伸长率为130％。实施例1-2中，强度为39MPa，伸长率为132％。实施例1-1和实施例1.2均能够得到良好的结果。
实施例1-3和实施例1.4是不含Ag但包含Cu的本发明的焊料合金。实施例1-3的Sb含有率为3wt％、Te含有率为0.01wt％、Au含有率为0.005wt％、Cu的含有率为0.1wt％。实施例1-4的Sb含有率为30wt％、Te含有率为1.5wt％、Au含有率为1wt％、Cu的含有率为20wt％。实施例1-3中，强度为29MPa，伸长率为135％。实施例1-4中，强度为40MPa，伸长率为131％。实施例1-3和实施例1-4均能够得到良好的结果。
比较例1-1和比较例1-2未使用Ag和Cu。比较例1-1中，强度为24MPa，伸长率为87％。比较例1-2中，强度为25MPa，伸长率为85％。
由上述结果可以明确：通过含有Ag或Cu，能够提高焊料合金105的伸长率和拉伸强度。可认为其原因在于：Te和Au在Sn母相中固溶的效果、以及因包含Ag或Cu而使Ag与Sn的金属间化合物或者Cu与Sn的金属间化合物析出。由此，能够吸收在热循环时产生的反复应力，能够实现接合结构体的高可靠性。
(实施例2)
如表2～4所示，变更Sb含有率、Te含有率、Au含有率、Ag含有率、Cu含有率，并将余量设为Sn来准备实施例2-1～2-64和比较例2-1～2-36的焊料合金105，分别使用所准备的焊料合金105，制作接合结构体201。具有实施例2-1～2-64和比较例2-1～2-36的焊料合金105的接合结构体201均使用以下示出的部件，并利用以下示出的方法来制作。
对于半导体元件101准备如下元件：在纵向长度为10mm、横向长度为10mm且具有0.2mm厚度的硅芯片102的下表面设置由Ti形成的电阻层103，进而在由Ti形成的电阻层103的下表面设置由Ni形成的金属层104而得到的元件。对于电路基板106准备如下基板：具有由铜形成的引线框且在引线框107的表面设置具有1μm厚度的由Ni形成的镀层108而得到的基板，所述引线框的纵向长度为20mm、横向长度为20mm，且具有1mm的厚度。
接下来，在所准备的电路基板106的由Ni形成的镀层108上载置具有0.1mm厚度的焊料合金105，进而以焊料合金105与由Ni形成的金属层104相接的方式，在焊料合金105上设置半导体元件101，一边使温度每分钟上升10℃，一边从室温加热至300℃为止。在300℃保持1分钟后，一边使温度每分钟降低10℃，一边从300℃冷却至室温为止，由此制造接合结构体201。
对所制作的实施例2-1～2-64和比较例2-1～2-36的接合结构体201进行热循环试验，并进行耐裂纹性的评价。热循环试验中，使用液槽试验槽，将-40℃、150℃各5分钟作为1个循环，进行1000个循环。用超声波显微镜观察试验后的样品，剥离面积除以接合面积来算出裂纹率。裂纹率超过10％时，无法使硅芯片放出的热有效地逸散至引线框，因此将10％以下判定为○，将大于10％判定为×。
将热循环试验中的裂纹率(％)的测定结果和判定结果一并示于表2～4。
[表2]
[表3]
[表4]
实施例2-1、2-3、2-6和2-8各自与Sb含有率均为2wt％的比较例2-1、2-3、2-2和2-4的不同点仅在于其Sb含有率为3wt％。实施例2-1、2-3、2-6和2-8的裂纹率分别为9％、7％、9％和8％，均判定为○。与此相对，比较例2-1、2-3、2-2和2-4的裂纹率分别为27％、31％、28％和33％，均判定为×。
实施例2-41、2-43、2-46和2-48各自与Sb含有率均为31wt％的比较例2-5、2-7、2-6和2-8的不同点仅在于其Sb含有率为30wt％。实施例2-41、2-43、2-46和2-48的裂纹率分别为8％、7％、6％和6％，均判定为○。与此相对，比较例2-5、2-7、2-6和2-8的裂纹率分别为26％、34％、28％和31％，均判定为×。
由该结果可知：Sb为3wt％以上且30wt％以下的情况下，耐裂纹性提高。可推测这是因为：SnSb化合物显示分散强化的效果时，如果Sb少则得不到效果，如果Sb多则强度提高，但焊料合金的延展性降低，因此耐裂纹性降低。
实施例2-1～实施例2-64均是Sb含有率为3wt％以上且30wt％以下，并且Te含有率为0.01wt％以上且1.5wt％以下，Au含有率为0.005wt％以上且1wt％以下。实施例2-1～实施例2-64的裂纹率均小于10％，判定为○，能够得到良好的结果。
即使Sb含有率为3wt％以上且30wt％以下，如比较例2-9～12那样，在Te含有率为0.005wt％以下的情况下，裂纹率也达到25％以上，判定为×。
即使Sb含有率为3wt％以上且30wt％以下，如比较例2-13～16那样，在Te含有率为1.6wt％以上的情况下，裂纹率也达到29％以上，判定为×。
即使Sb含有率为3wt％以上且30wt％以下，如比较例2-17～20那样，在Au含有率为0.001wt％以下的情况下，裂纹率也达到26％以上，判定为×。
即使Sb含有率为3wt％以上且30wt％以下，如比较例2-21～24那样，在Au含有率为2wt％以上的情况下，裂纹率也达到27％以上，判定为×。
由上述结果可知：通过使Te含有率为0.01wt％以上且1.5wt％以下，并且使Au含有率为0.005wt％以上且1wt％以下，能够有效地提高焊料材料的耐裂纹性。可推测这是因为：通过使Te含有率为0.01wt％以上，能够有效地获得由Te的固溶带来的效果，此外，通过使Te含有率为1.5wt％以下，能够抑制Te的化合物形式的析出，从而使延展性得以改善、耐裂纹性提高。此外，可推测：通过使Au含有率为0.005wt％以上，能够使离子半径与Te不同的Au与固溶于Sn的Te有效地进行置换，并有效地产生位错，从而使高温下的伸长率提高，耐裂纹性也提高。另一方面，可推测：通过使Au含有率为1wt％以下，能够抑制包含Au和Sn的脆弱化合物析出，因而使耐裂纹性提高。
即使Sb含有率为3wt％以上且30wt％以下，并且Te含有率为0.01wt％以上且1.5wt％以下，Au含有率为0.005wt％以上且1wt％以下，如比较例2-25那样在Ag的含有率为0.05wt％以下的情况下，以及如比较例2-27那样在Ag的含有率为21wt％以上的情况下，裂纹率达到21％以上，判定为×。
即使Sb含有率为3wt％以上且30wt％以下，并且Te含有率为0.01wt以上％1.5wt％以下，Au含有率为0.005wt％以上且1wt％以下，如比较例2-26那样在Cu的含有率为0.05wt％以下的情况下，以及如比较例2-28那样在Cu的含有率为21wt％以上的情况下，裂纹率达到26％以上，判定为×。
在Sb含有率为3wt％以上且30wt％以下、并且Te含有率为0.01wt％以上且1.5wt％以下、Au含有率为0.005wt％以上且1wt％以下的情况下，如实施例2-49～2-64那样，在Ag与Cu的含有率之和为0.1wt％以上且20wt％以下的情况下，裂纹率均小于10％，判定为○。然而，如比较例2-29～2-36那样，在Ag与Cu的含有率之和为0.08wt％以下或者为21wt％以上的情况下，裂纹率达到20％以上。
由上述结果可知：通过使Ag与Cu的含有率之和为0.1wt％以上且20wt％以下，能够有效地提高焊料材料的耐裂纹性。可认为这是因为：通过使Ag与Cu的含有率之和为0.1wt％以上，Sn与Au的金属间化合物以及Sn与Cu的金属间化合物之中的至少一者会析出一定量，从而发生强度的提高。此外可认为：通过使Ag与Cu的含有率之和为20wt％以下，从而其与Sn的金属间化合物的量不会过多，呈现在Sn中固溶有一定量的Te和Au的状态，因此能够有效地获得固溶的效果、即伸长率的提高。由此可认为：能够吸收热循环时的应力，耐裂纹性提高。
由上述结果可以明确：通过使Sb的含有率为3wt％以上且30wt％以下，Te的含有率为0.01wt％以上且1.5wt％以下，并且Au的含有率为0.005wt％以上且1wt％以下，Ag和Cu中的至少一种元素的含有率为0.1wt％以上且20wt％以下，并且Ag与Cu的含有率之和为0.1wt％以上且20wt％以下，从而耐裂纹性提高。
如表5所示，变更Sb含有率、Te含有率、Au含有率、Ag含有率、Cu含有率，并将余量设为Sn来准备实施例2-65～2-98的焊料合金105，分别使用所准备的焊料合金105，制作接合结构体201。具有实施例2-65～2-98的焊料合金105的接合结构体201均利用与实施例2-1相同的方法来制作后，实施相同的热循环试验，然后进行裂纹率(％)的测定和判定。将测定结果和判定一并示于表5。
实施例2-65～2-80的Cu含有率为0.2wt％以上且小于5wt％。
此外，实施例2-81～2-98的Ag含有率为0wt％以上且小于20wt％，Cu含有率为0.05wt％以上且小于5wt％。
由这些结果可知：裂纹率的判定均为○，进而Cu含有率为0.05wt％以上且小于5wt％时存在裂纹率的值最低的倾向，耐裂纹性提高。
因而，在Sb的含有率为3wt％以上且30wt％以下、Te的含有率为0.01wt％以上且1.5wt％以下、并且Au的含有率为0.005wt％以上且1wt％以下、Ag和Cu中的至少一种元素的含有率为0.1wt％以上且20wt％以下、并且Ag与Cu的含有率之和为0.1wt％以上且20wt％以下的焊料合金之中，尤其是Cu含有率为0.05wt％以上且小于5wt％的情况下，形成具有更高耐裂纹性的焊料合金，能够实现接合结构体的高可靠性。
[表5]
(实施例3)
如下所示地制作本发明的焊料合金和使用其的接合结构体。
准备焊料合金105、半导体元件101和电路基板106。首先，通过将包含3wt％的Sb、0.01wt％的Te和20wt％的Ag且余量为Sn的合金成形为0.1mm厚的板状，从而得到焊料合金105。进而，在已成形的板状的焊料合金105的两面，以焊料合金105熔融而与两面的Au膜全部混合时的焊料合金105的Au含有率达到1wt％的方式，在两面以0.19μm的厚度施加Au膜。进行熔融而与Au镀层混合的焊料合金105的组成比是：Sb为3wt％、Te为0.01wt％、Au为1wt％、Ag为20wt％，且余量为Sn。
对于半导体元件101准备如下元件：在纵向长度为10mm、横向长度为10mm且具有0.2mm厚度的硅芯片102的下表面设置由Ti形成的电阻层103，进而在由Ti形成的电阻层103的下表面设置由Ni形成的金属层104而得到的元件。对于电路基板106准备如下基板：具有由铜形成的引线框且在引线框107的表面设置具有1μm厚度的由Ni形成的镀层108而得到的基板，所述引线框的纵向长度为20mm、横向长度为20mm，且具有1mm的厚度。
在所准备的电路基板106的由Ni形成的镀层108上载置具有100.38μm厚度的焊料合金105，进而以焊料合金105与由Ni形成的金属层104相接的方式，在焊料合金105上设置半导体元件101，一边使温度每分钟上升10℃，一边从室温加热至300℃为止。在300℃保持1分钟后，一边使温度每分钟降低10℃，一边从300℃冷却至室温为止，由此制造接合结构体201。
进行与实施例2相同的热循环试验，对所制作的接合结构体进行耐裂纹性的判定。其结果，实施例3-1的热循环试验后的裂纹率达到7％，判定为○。
实施例3-1中，对包含Sn、Sb、Te和Ag的焊料合金实施了镀Au。此时，焊料合金105中的Au的组成比达到1wt％，Au因接合时的加热而扩散至焊料接合层，因此形成实质上与实施例2-6相同的接合结构体。
除了含有20wt％的Cu来代替Ag之外，利用与实施例3-1相同的条件制造的安装结构体(实施例3-2)中，裂纹率为8％，能够得到良好的结果。此外，除了各含有10wt％的Ag和Cu之外，利用与实施例3-1相同的条件制造的安装结构体(实施例3-3)中，裂纹率为7％，能够得到良好的结果。
除了含有0.1wt％的Cu来代替Ag之外，利用与实施例3-1相同的条件制造的安装结构体(实施例3-4)中，裂纹率为3％，能够得到良好的结果。
除了含有0.05wt％的Ag和4.9wt％的Cu之外，利用与实施例3-1相同的条件制造的安装结构体(实施例3-4)中，裂纹率为4％，能够得到良好的结果。
可明确：如果Au为本发明的组成范围，则也可以形成于焊料合金的表面。
根据本发明的焊料合金和接合结构体，高温下的伸长率、强度得到改善，接合结构体的耐裂纹性提高，因此可应用于电源模块等半导体元件的接合用途。

Claims (3)

1.一种焊料合金，其中，
Sb的含有率为3wt％以上且30wt％以下，
Te的含有率为0.01wt％以上且1.5wt％以下，
Au的含有率为0.005wt％以上且1wt％以下，
所述焊料合金包含Ag和Cu中的至少一者，Ag和Cu中的至少一者的含有率为0.1wt％以上且20wt％以下，并且Ag与Cu的含有率之和为0.1wt％以上且20wt％以下，
余量为Sn。
2.一种接合结构体，其由半导体元件与电路基板借助焊料接合层进行接合而得到，所述焊料接合层包含Sb、Te、Au、选自Ag和Cu中的至少一种元素、以及Sn，
在半导体元件的金属层与焊料接合层的界面处、以及电路基板的镀层与焊料接合层的界面处包含SnNi合金或SnCu合金。
3.根据权利要求2所述的接合结构体，其中，半导体元件的金属层与焊料接合层的所述界面处、以及电路基板的镀层与焊料接合层的所述界面处包含的SnNi合金或SnCu合金中包含Te和Au中的至少一者。
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