CN108695229A - 陶瓷加热器 - Google Patents

陶瓷加热器 Download PDF

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CN108695229A
CN108695229A CN201810193960.2A CN201810193960A CN108695229A CN 108695229 A CN108695229 A CN 108695229A CN 201810193960 A CN201810193960 A CN 201810193960A CN 108695229 A CN108695229 A CN 108695229A
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heat transfer
transfer member
main body
chip
ceramic heater
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CN108695229B (zh
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郑哲镐
崔晋荣
李柱声
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Meike Ceramic Technology Co ltd
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Mico Co Ltd
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Abstract

陶瓷加热器可以包括：主体，其为陶瓷主体，具有为了举升销的升降而上下贯通的多个销孔；发热构件，其配备于所述主体的内部，借助于从外部接入的电源而发生热，用于加热所述晶片；及多个热传递构件，其在所述主体的上部面，沿着所述销孔配备部位的四周配备，用于使所述发热构件发生的热传导到所述晶片，以便所述晶片被均一加热。

Description

陶瓷加热器
技术领域
本发明涉及陶瓷加热器，更详细而言，涉及一种用于在半导体制造工序中加热晶片的陶瓷加热器。
背景技术
一般而言，半导体元件可以在晶片上通过沉积工序及照片蚀刻工序等而形成电路图案，对所述电路图案进行个别化而获得多个半导体芯片后，通过对所述半导体芯片进行封装而制造。
所述沉积工序作为在所述晶片上形成绝缘膜、导电膜等多样膜的工序，根据需要，可以执行物理气相沉积、化学气相沉积、等离子体强化化学气相沉积等工序。
特别是等离子体强化化学气相沉积工序，将所述晶片加热到工序温度，利用形成为等离子体状态的源气体和反应气体，可以在所述晶片上形成希望的膜。用于执行所述等离子体强化化学气相沉积工序的装置可以使用等离子体源和陶瓷加热器，所述等离子体源用于将供应到工序腔室内部的源气体和反应气体形成为等离子体状态，所述陶瓷加热器用于支撑所述晶片并加热到工序温度。
在所述陶瓷加热器中具备用于将所述晶片加热到工序温度的发热构件、用于将所述源气体和反应气体形成为等离子体状态的电极构件。另外，在所述陶瓷加热器中具备为了举升销的升降而上下贯通的多个销孔。此时，所述发热构件及所述电极构件与所述销孔隔开配置。
所述发热构件与所述销孔隔开配置，所述销孔具有截面积在所述陶瓷加热器的上端部位增加的结构，因而所述发热构件发生的热无法均一传递到被所述陶瓷加热器支撑的晶片。即，在所述晶片中，位于所述销孔上方的部位的温度会与其余部位的温度存在差异。因此，所述晶片的温度分布会不均一。
在所述晶片温度不均一的状态下，当针对所述晶片执行沉积工序时，在所述晶片中，在位于所述销孔上方的部位形成的膜的厚度相对较薄，膜无法在所述晶片上均一地形成。因此，会对所述晶片的品质产生不良影响。
发明内容
本发明提供一种能够均一地加热晶片的陶瓷加热器。
本发明的陶瓷加热器可以包括：主体，其为陶瓷主体，具有为了举升销的升降而上下贯通的多个销孔；发热构件，其配备于所述主体的内部，借助于从外部接入的电源而发生热，用于加热所述晶片；及多个热传递构件，其在所述主体的上部面，沿着所述销孔配备部位的四周配备，用于使所述发热构件发生的热传导到所述晶片，以便所述晶片被均一加热。
根据本发明的一个实施例，所述多个热传递构件可以由与所述主体相同的材质构成，或由具有高于所述主体的热传递率的材质构成。
根据本发明的一个实施例，所述多个热传递构件可以沿着所述各销孔的四周，以环形态配备。
根据本发明的一个实施例，所述多个热传递构件可以沿着所述各销孔的四周，相互隔开地配备多个。
根据本发明的一个实施例，所述多个热传递构件可以与所述各销孔贴紧或从所述各销孔隔开配置。
根据本发明的一个实施例，所述多个热传递构件与所述各销孔之间的隔开间隔可以为0至20㎜。
根据本发明的一个实施例，沿着一个销孔四周配备的热传递构件的上部面面积可以为13mm2至1900mm2。
根据本发明的一个实施例，所述陶瓷加热器可以还包括多个支撑构件，其在所述主体的上部面相互隔开配备，用于支撑晶片。
根据本发明的一个实施例，所述多个热传递构件可以具有与所述支撑构件相同的高度。
根据本发明的一个实施例，所述多个热传递构件的高度可以为5μm至40μm。
根据本发明的一个实施例，所述陶瓷加热器可以还包括电极构件，其配置于所述主体的内部，与外部的接地构件电气连接。
本发明的陶瓷加热器在陶瓷主体的上面，沿着销孔的四周具备热传递构件。因此，在所述陶瓷主体内部，发热构件与所述销孔隔开，所述销孔具有截面积向所述陶瓷加热器上面越来越增加的结构，即使如此，所述发热构件发生的热可以通过所述多个热传递构件，传递到晶片中位于所述销孔上方的部位。因此，被所述陶瓷加热器支撑的晶片可以被均一地加热。由于所述晶片被均一地加热，因而在等离子体强化化学气相沉积工序中，可以在所述晶片上均一地形成膜。因此，可以提高所述晶片的品质。
附图说明
图1是用于说明本发明一个实施例的陶瓷加热器的部分剖面图。
图2是用于说明图1所示的陶瓷加热器的俯视图。
图3是用于说明图1所示的热传递构件的一个示例的多个俯视图。
图4是用于说明图1所示的热传递构件的另一示例的多个俯视图。
符号说明
100：陶瓷加热器 110：主体
112：销孔 120：支撑构件
130：发热构件 140：电极构件
150：热传递构件
具体实施方式
下面参照附图，对本发明实施例的陶瓷加热器进行详细说明。本发明可以施加多样的变更，可以具有多种形态，将在附图中示例性图示特定实施例并在正文中详细说明。但是，这并非要将本发明限定于特定的公开形态，应理解为包括本发明的思想及技术范围内包含的所有变更、等同物以及替代物。在说明各图的同时，针对类似的构成要素，使用了类似的附图标记。在附图中，为了本发明的明确性，结构物的尺寸比实际放大图示。
第一、第二等术语可以用于说明多样的构成要素，但所述构成要素不得由所述术语所限定。所述术语只用于将一个构成要素区别于其他构成要素之目的。例如，在不超出本发明权利范围的同时，第一构成要素可以命名为第二构成要素，类似地，第二构成要素也可以命名为第一构成要素。
本申请中使用的术语只用于说明特定的实施例，并非要限定本发明之意。只要在文理上未明确表示不同，单数的表现包括复数的表现。在本申请中，“包括”或“具有”等术语是要指定在说明书中记载的特征、数字、步骤、动作、构成要素、部件或他们的组合的存在，应理解为不预先排除一个或其以上其他特征或数字、步骤、动作、构成要素、部件或他们的组合的存在或附加可能性。
只要未不同地定义，包括技术性或科学性术语在内，此处使用的所有术语具有与本发明所属技术领域的普通技术人员一般理解的内容相同的意义。与一般使用的字典定义的内容相同的术语，应解释为具有与在相关技术的文理上具有的意义一致的意义，只要在本申请中未明确定义，不得解释为理想性地，过度形式上的意义。
图1是用于说明本发明一个实施例的陶瓷加热器的部分剖面图，图2是用于说明图1所示的陶瓷加热器的俯视图。
如果参照图1及图2，陶瓷加热器100包括主体110、多个支撑构件120、发热构件130、电极构件140及热传递构件150。
主体110具有平板形态，可以由陶瓷材质构成。所述陶瓷材质的耐热性优秀，为电气绝缘体。例如，所述陶瓷材质可以为Al2O3、Y2O3、Al2O3/Y2O3、ZrO2、AlC(Autoclavedlightweight concrete)、TiN、AlN、TiC、MgO、CaO、CeO2、TiO2、BxCy、BN、SiO2、SiC、YAG、Mullite、AlF3等。
主体110具有上下贯通的多个销孔112。多个举升销(图上未示出)配备得沿着多个销孔112升降，可以将晶片加载于主体110上，或将所述晶片从主体110卸载。
另一方面，多个销孔112具有截面积在主体110的上端部位增加的结构。
多个支撑构件120相互隔开地配备于主体110的上部面，支撑所述晶片。在主体110中，即使所述上部面的平坦度不良，多个支撑构件120也可以平坦、稳定地支撑所述晶片。
多个支撑构件120可以由与主体110相同的材质构成。
发热构件130配备于主体110内部。发热构件130与外部电源供应部(图上未示出)电气连接。因此，发热构件130可以从所述电源供应部(图上未示出)接入电源并发生热，加热放置于主体110的多个支撑构件120上的所述晶片。
发热构件130由具有发热功能的金属材质构成。作为一个示例，所述发热构件130可以由钽(Ta)、镍(Ni)、钨(W)、钼(Mo)、银(Ag)、金(Au)、铌(Nb)、钛(Ti)或他们的合金构成。
电极构件140配备于主体110的内部。电极构件140与外部接地构件电气连接。电极构件140由导电性优秀的金属材质构成。例如，电极构件140可以由与发热构件130类似的材质构成。
当利用通过从外部接入的高频电压引起的等离子体，在放置于主体110的所述晶片上沉积薄膜时，可以通过主体110，稳定地加热所述晶片，也可以防止所述晶片因主体110而电气干扰。
另外，就利用了所述等离子体的薄膜沉积工序而言，电极构件140提供基准电压，所述基准电压用于使得借助于所述高频电压而顺利形成所述等离子体。
发热构件130及电极构件140与销孔112隔开配置，以便发热构件130及电极构件140不与沿着销孔112进行升降的所述举升销接触。
热传递构件150在主体110的上部面中，沿着销孔112配备部位的四周配备。热传递构件150将发热构件130发生的热传递给被多个支撑构件120支撑的所述晶片。因此，在主体110内部，发热构件130与销孔112隔开，即使销孔112具有截面积在主体110的上端部位增加的结构，发热构件130发生的热可以通过热传递构件150，直接传递到所述晶片中位于销孔112上方的部位。因此，借助于陶瓷加热器100发生的热，所述晶片可以被均一地加热。另外，由于所述晶片被均一地加热，因而在等离子体强化化学气相沉积工序中，可以在所述晶片上均一地形成膜。
热传递构件150可以由陶瓷材质构成。
例如，热传递构件150可以由热传递率比构成主体110的陶瓷材质相对更高的陶瓷材质构成。此时，热传递构件150可以使所述晶片中位于销孔112上方的部位的温度相对更快地增加。
作为另一示例，热传递构件150与主体110可以由相同的陶瓷材质构成。
另一方面，热传递构件150可以具有多样形态。
图3是用于说明图1所示的热传递构件的一个示例的多个俯视图。
如果参照图3，热传递构件150可以沿着各销孔112的四周，以大致圆圈形状配备，即，以环状配备。具体而言，优选热传递构件150为与销孔112形态对应的圆形环形态，但也可以为多边形环形态。所述环形态的热传递构件150既可以具有内侧面与外侧面平坦的形状，也可以具有皱褶形状。
图4是用于说明图1所示的热传递构件的另一示例的多个俯视图。
如果参照图4，热传递构件150可以沿着各销孔112的四周相互隔开地配备多个。此时，热传递构件150可以具有圆形、多边形等多样形态。
热传递构件150可以与各销孔112贴紧或从各销孔112隔开配置。例如，当热传递构件150具有圆形的环形状时，热传递构件150的内侧半径可以与各销孔112的最上端半径实质上相同，或热传递构件150的内侧半径可以大于各销孔112的最上端半径。
例如，热传递构件150与各销孔112之间的隔开间隔G可以为0至约20㎜。
当热传递构件150与各销孔112之间的隔开间隔G小于0mm时，热传递构件150配置于各销孔112上，因而当所述举升销升降时，会与热传递构件150冲突。因此，热传递构件150与各销孔112之间的隔开间隔G可以等于或大于0mm。
当热传递构件150与各销孔112之间的隔开间隔G超过约20㎜时，热传递构件150与各销孔112过度隔开。因此，即使热传递构件150将发热构件130发生的热直接传递给所述晶片，所述热也无法充分传递到所述晶片中位于销孔112上方的部位。因此，所述晶片中位于销孔112上方的部位的温度会低于其余部位。
另外，沿着一个销孔112四周配备的热传递构件150的上部面面积可以约为13mm2至1900mm2。
当热传递构件150的上部面面积不足约13mm2时，热传递构件150的面积相对较窄，发热构件130发生的热无法充分传递给所述晶片。因此，所述晶片中位于销孔112上方的部位的温度低于其余部位的温度，所述晶片的温度会不均一。
当热传递构件150的上部面面积超过约1900mm2时，热传递构件150的面积相对较宽，发热构件130发生的热会过度传递给所述晶片。因此，所述晶片中位于销孔112上方的部位的温度高于其余部位的温度，所述晶片的温度会不均一。
另一方面，热传递构件150可以具有与支撑构件120相同的高度。
当热传递构件150的高度低于支撑构件120高度时，由于被支撑构件120支撑的晶片与热传递构件150之间的间隙，热传递构件150无法与所述晶片接触。因此，发热构件130发生的热无法通过热传递构件150直接传递给所述晶片。
当热传递构件150的高度高于支撑构件120的高度时，所述晶片中未被热传递构件150支撑的部位会垂向下方。
因此，热传递构件150与所述晶片接触，为了防止所述晶片的下垂，优选热传递构件150具有与支撑构件120相同的高度。
例如，热传递构件150的高度可以为约5μm至40μm。
当热传递构件150的高度不足约5μm时，热传递构件150的高度过低，难以制造热传递构件150。
当热传递构件150的高度超过约40μm时，由于热传递构件150的高度，在发热构件130发生的热通过热传递构件150传递到所述晶片的过程中，会发生热损失。因此，发热构件130发生的热无法充分传递给所述晶片，所述晶片会被不均一地加热。
实验例1
表1
表1是在热传递构件150具有圆形环形态，将热传递构件150的上部面面积维持在约13mm2至1900mm2的状态下，使销孔112与热传递构件150之间的距离，在按5mm单位从0mm增加至25mm期间，使陶瓷加热器上升至700℃，测量晶片中位于销孔112上方的部位的温度与其余部位的温度偏差的结果。当所述温度偏差为约8℃以下时，判断为所述晶片的温度均一。
所述温度偏差测量结果，当销孔112与热传递构件150之间的距离为0mm至20mm时，测量为所述晶片的温度均一，当销孔112与热传递构件150之间的距离为25mm时，测量为所述晶片的温度不均一。因此可知，为了均一地加热所述晶片的温度，热传递构件150与各销孔112应隔开约0至20㎜。
实验例2
表2
表2是在热传递构件150具有圆形环形态，将热传递构件150的上部面面积维持在约13mm2至1900mm2的状态下，在使热传递构件150高度变化的同时，测量晶片中位于销孔112上方的部位的温度与其余部位的温度偏差的结果。当所述温度偏差为约8℃以下时，判断为所述晶片的温度均一。
所述温度偏差测量结果，当热传递构件150的高度为30至39μm时，测量为所述晶片的温度均一，当热传递构件150的高度为40至45μm时，测量为所述晶片的温度不均一。因此可知，为了均一地加热所述晶片的温度，热传递构件150的高度应不足约40μm。
以上参照本发明优选实施例进行了说明，但相应技术领域的熟练从业者可以理解，在不超出以下专利权利要求书记载的本发明的思想及领域的范围内，可以多样地修改及变更本发明。

Claims (11)

1.一种陶瓷加热器，其中，包括：
主体，其为陶瓷主体，具有为了举升销的升降而上下贯通的多个销孔；
发热构件，其配备于所述主体的内部，借助于从外部接入的电源而发生热，用于加热所述晶片；及
多个热传递构件，其在所述主体的上部面，沿着所述销孔配备部位的四周配备，用于使所述发热构件发生的热传导到所述晶片，以便所述晶片被均一加热。
2.根据权利要求1所述的陶瓷加热器，其中，
所述多个热传递构件由与所述主体相同的材质构成，或由具有高于所述主体的热传递率的材质构成。
3.根据权利要求1所述的陶瓷加热器，其中，
所述多个热传递构件沿着所述各销孔的四周，以环形态配备。
4.根据权利要求1所述的陶瓷加热器，其中，
所述多个热传递构件沿着所述各销孔的四周，相互隔开地配备多个。
5.根据权利要求1所述的陶瓷加热器，其中，
所述多个热传递构件与所述各销孔贴紧或从所述各销孔隔开配置。
6.根据权利要求5所述的陶瓷加热器，其中，
所述多个热传递构件与所述各销孔之间的隔开间隔为0至20㎜。
7.根据权利要求1所述的陶瓷加热器，其中，
沿着一个销孔四周配备的热传递构件的上部面面积为13mm2至1900mm2。
8.根据权利要求1所述的陶瓷加热器，其中，
还包括多个支撑构件，其在所述主体的上部面相互隔开配备，用于支撑晶片。
9.根据权利要求8所述的陶瓷加热器，其中，
所述多个热传递构件具有与所述支撑构件相同的高度。
10.根据权利要求9所述的陶瓷加热器，其中，
所述多个热传递构件的高度为5μm至40μm。
11.根据权利要求1所述的陶瓷加热器，其中，
还包括电极构件，其配置于所述主体的内部，与外部的接地构件电气连接。
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