CN108666188B - 阴极配置、电子枪以及包括此电子枪的光刻系统 - Google Patents

阴极配置、电子枪以及包括此电子枪的光刻系统 Download PDF

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Publication number
CN108666188B
CN108666188B CN201810479190.8A CN201810479190A CN108666188B CN 108666188 B CN108666188 B CN 108666188B CN 201810479190 A CN201810479190 A CN 201810479190A CN 108666188 B CN108666188 B CN 108666188B
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cathode
focusing
focusing electrode
electrode
arrangement
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Chinese (zh)
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CN108666188A (zh
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L.迪努-格尔特勒
E.P.霍杰沃斯特
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ASML Netherlands BV
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ASML Netherlands BV
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/13Solid thermionic cathodes
    • H01J1/15Cathodes heated directly by an electric current
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/13Solid thermionic cathodes
    • H01J1/20Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
    • H01J1/28Dispenser-type cathodes, e.g. L-cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/027Construction of the gun or parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/029Schematic arrangements for beam forming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/075Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2229/00Details of cathode ray tubes or electron beam tubes
    • H01J2229/48Electron guns
    • H01J2229/4803Electrodes
    • H01J2229/481Focusing electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/061Construction

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Solid Thermionic Cathode (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201810479190.8A 2013-12-30 2014-12-22 阴极配置、电子枪以及包括此电子枪的光刻系统 Active CN108666188B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361921546P 2013-12-30 2013-12-30
US61/921,546 2013-12-30
CN201480071807.2A CN105874555B (zh) 2013-12-30 2014-12-22 阴极配置、电子枪以及包括此电子枪的光刻系统

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CN201480071807.2A Division CN105874555B (zh) 2013-12-30 2014-12-22 阴极配置、电子枪以及包括此电子枪的光刻系统

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CN108666188A CN108666188A (zh) 2018-10-16
CN108666188B true CN108666188B (zh) 2020-06-12

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CN201810479190.8A Active CN108666188B (zh) 2013-12-30 2014-12-22 阴极配置、电子枪以及包括此电子枪的光刻系统
CN201480071826.5A Active CN105874554B (zh) 2013-12-30 2014-12-22 阴极配置、电子枪以及包括此电子枪的光刻系统
CN201480071807.2A Active CN105874555B (zh) 2013-12-30 2014-12-22 阴极配置、电子枪以及包括此电子枪的光刻系统

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CN201480071807.2A Active CN105874555B (zh) 2013-12-30 2014-12-22 阴极配置、电子枪以及包括此电子枪的光刻系统

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US (3) US9455112B2 (https=)
EP (2) EP3090439B1 (https=)
JP (4) JP6208371B2 (https=)
KR (2) KR102359077B1 (https=)
CN (3) CN108666188B (https=)
NL (2) NL2014030B1 (https=)
RU (1) RU2689391C2 (https=)
TW (2) TWI661457B (https=)
WO (2) WO2015101538A1 (https=)

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TWI661457B (zh) 2013-12-30 2019-06-01 荷蘭商Asml荷蘭公司 陰極配置、電子槍以及包含此電子槍的微影系統
US10529529B2 (en) * 2016-04-20 2020-01-07 Moxtek, Inc. Electron-beam spot optimization
US10366859B2 (en) * 2016-08-24 2019-07-30 Varian Medical Systems, Inc. Electromagnetic interference containment for accelerator systems
UA113827C2 (xx) * 2016-09-07 2017-03-10 Аксіальна електронна гармата
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
JP6396618B1 (ja) * 2018-04-03 2018-09-26 グローテクノロジー株式会社 グロー放電システム及びこれを用いたグロー放電質量分析装置
CN111048373B (zh) * 2018-10-12 2021-04-27 中国电子科技集团公司第三十八研究所 一种电子源再生方法
WO2020213109A1 (ja) * 2019-04-18 2020-10-22 株式会社日立ハイテク 電子源、及び荷電粒子線装置
US20230330751A1 (en) * 2019-09-23 2023-10-19 Freemelt Ab Electron gun cathode technology
US10923307B1 (en) * 2020-04-13 2021-02-16 Hamamatsu Photonics K.K. Electron beam generator
JP6762635B1 (ja) * 2020-04-16 2020-09-30 株式会社Photo electron Soul 電子銃、電子線適用装置、および、電子ビームの射出方法
US11244800B2 (en) * 2020-06-18 2022-02-08 Axcelis Technologies, Inc. Stepped indirectly heated cathode with improved shielding
JP7554100B2 (ja) * 2020-11-19 2024-09-19 株式会社ニューフレアテクノロジー 電子放出源の動作制御方法、電子ビーム描画方法、及び電子ビーム描画装置
JP7549803B2 (ja) * 2021-02-09 2024-09-12 日新イオン機器株式会社 電子源およびイオン源
US20230154720A1 (en) * 2021-11-16 2023-05-18 Nuflare Technology, Inc. Method for estimating cathode lifetime of electron gun, and electron beam writing apparatus
CN114284121B (zh) * 2021-12-24 2023-09-19 中国科学院空天信息创新研究院 用于行波管的电子枪及其制备方法
JP7752074B2 (ja) * 2022-02-25 2025-10-09 株式会社Ihi ヒートシールド
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TW201528312A (zh) 2015-07-16
RU2689391C2 (ru) 2019-05-28
JP6462805B2 (ja) 2019-01-30
JP2018032861A (ja) 2018-03-01
EP3090439A1 (en) 2016-11-09
CN105874554B (zh) 2018-05-08
US20160314935A1 (en) 2016-10-27
NL2014029B1 (en) 2016-01-08
CN108666188A (zh) 2018-10-16
WO2015101537A4 (en) 2015-08-27
NL2014029A (en) 2015-07-01
EP3090438A1 (en) 2016-11-09
JP2020009777A (ja) 2020-01-16
CN105874554A (zh) 2016-08-17
US9455112B2 (en) 2016-09-27
JP6208371B2 (ja) 2017-10-04
US20150187541A1 (en) 2015-07-02
US10622188B2 (en) 2020-04-14
KR20160104711A (ko) 2016-09-05
JP2017501553A (ja) 2017-01-12
RU2016131081A3 (https=) 2018-06-20
JP6929910B2 (ja) 2021-09-01
EP3090438B1 (en) 2020-03-25
NL2014030B1 (en) 2016-01-08
TW201532096A (zh) 2015-08-16
TWI608511B (zh) 2017-12-11
WO2015101538A1 (en) 2015-07-09
KR102427119B1 (ko) 2022-07-29
WO2015101538A4 (en) 2015-08-27
JP2017502469A (ja) 2017-01-19
US20150187533A1 (en) 2015-07-02
RU2016131081A (ru) 2018-02-06
KR20160104712A (ko) 2016-09-05
EP3090439B1 (en) 2020-06-24
US9466453B2 (en) 2016-10-11
TWI661457B (zh) 2019-06-01
CN105874555A (zh) 2016-08-17
CN105874555B (zh) 2018-06-15
JP6590811B2 (ja) 2019-10-16
KR102359077B1 (ko) 2022-02-07
NL2014030A (en) 2015-07-01
WO2015101537A1 (en) 2015-07-09

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