CN108620743B - 切割方法及激光加工装置 - Google Patents

切割方法及激光加工装置 Download PDF

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CN108620743B
CN108620743B CN201710712095.3A CN201710712095A CN108620743B CN 108620743 B CN108620743 B CN 108620743B CN 201710712095 A CN201710712095 A CN 201710712095A CN 108620743 B CN108620743 B CN 108620743B
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藤田努
大野天颂
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Abstract

本发明的实施方式提供能够提高加工用透镜与衬底间的距离的测定精度的切割方法及激光加工装置。本发明的实施方式的切割方法包括如下步骤：检测衬底的第一部分及与所述第一部分不同的第二部分的衬底信息；根据所述第一部分及所述第二部分的所述衬底信息，算出所述衬底与加工用透镜间的距离信息；及根据所述距离信息，从所述加工用透镜将激光光照射至所述衬底。

Description

切割方法及激光加工装置
[相关申请案]
本申请案享有以日本专利申请案2017-57716号(申请日：2017年3月23日)为基础申请案的优先权。本申请案通过参照该基础申请案而包含基础申请案的全部内容。
技术领域
本发明的实施方式涉及切割方法及激光加工装置。
背景技术
作为将形成有半导体元件的衬底分割为各个芯片的切割方法，在日本专利公开公报2008-87027号公报等中为人所周知的是隐形加工，即，透过加工用透镜将激光光照射至衬底。在该隐形加工中，难以精度佳地测定加工用透镜与衬底间的距离。
发明内容
本发明的实施方式提供能够提高加工用透镜与衬底间的距离的测定精度的切割方法及激光加工装置。
本发明的实施方式的切割方法包括如下步骤：检测衬底的第一部分及与所述第一部分不同的第二部分的衬底信息；根据所述第一部分及所述第二部分的所述衬底信息，算出所述衬底与加工用透镜间的距离信息；及根据所述距离信息，从所述加工用透镜将激光光照射至所述衬底。
附图说明
图1是表示本实施方式的切割方法的截面图。
图2表示本实施方式的激光加工装置。
图3是说明本实施方式的衬底的移动方向的图。
图4是说明本实施方式的切割方法的图。
图5是说明本实施方式的反射方式的图。
图6是说明本实施方式的切割方法的图。
图7是说明本实施方式的测定方法的概念图。
图8是说明本实施方式的测定方法的概念图。
图9是说明本实施方式的变化例的切割方法的图。
具体实施方式
以下，参照图式对本发明的实施方式进行说明。本实施方式并不限定本发明。
图1表示本实施方式的切割方法的一例。
对正面被未图示的保护带覆盖的衬底1照射激光光LA。保护带用来保护形成在衬底1的正面的半导体元件。该衬底1例如为硅衬底。图1表示激光照射中的衬底1的截面图。
沿衬底1的切割预定线照射激光光并使激光光聚光于衬底内部，由此在衬底内部形成结晶排列崩坏的改质层SD。以该改质层SD为起点，产生在衬底上下延伸的龟裂(切割线)。
进而，通过使用磨石从衬底背面进行磨削，从而在正面出现切割线。
其后，将例如DAF(Die Attached Film，芯片黏结膜)等附有黏结材料的带张贴于衬底并利用环固定后，剥离保护带。进而，利用扩张环从下向上顶衬底而将衬底分割为各个芯片。
在该激光光照射中，使用图2所示的激光加工装置100。激光加工装置100具有能够载置衬底1的工作盘10、SD引擎20、及能够移动衬底的衬底移动机构30。SD引擎20具有激光光照射功能。SD引擎将在下文进行详述。工作盘10为圆形，在与工作盘的表面平行的平面上，规定有X方向及与X方向垂直的Y方向。进而，将与X方向及Y方向垂直的方向设为Z方向。Z方向为相对于工作盘10的面(XY平面)垂直的方向。此外在XY平面中，将以工作盘的中心点为基准的旋转角设为θ。
通过衬底移动机构30使工作盘移动，由此能够变更激光光相对于衬底的照射位置。
通常在照射激光光时，衬底沿X方向及Y方向朝一方向移动。将该照射激光光时的衬底的移动方向称为衬底的进给方向。如图3所示，一面在X方向移动衬底一面进行激光光的照射(步骤(Step)1)之后，旋转衬底。其旋转角为θ＝90°。然后，将衬底在Y方向上仅移动特定距离(步骤2)。特定距离是指例如将衬底分割为各个芯片时的1芯片量的长度。在该向Y方向移动时进行激光光的照射。然后，再次一面在X方向移动，一面沿X方向照射激光光(步骤3)。如此通过重复X方向的移动及激光光照射与Y方向的移动而遍及衬底整个面进行X方向的激光光照射。
其次，切换衬底的X方向及Y方向。重复衬底沿Y方向的移动及激光光照射与X方向的移动。于在X方向移动时进行激光光的照射。如此，沿衬底的X方向及Y方向以与各个芯片的大小对应的方式呈格子状照射激光光，在衬底内部形成改质层SD。其后通过周知方法将衬底分割为各个芯片。
使用图4对使用SD引擎20的激光光照射进行说明。SD引擎20具有：加工用激光光源21，用于衬底加工；加工用透镜22，能够将激光光照射至衬底；CCD(charge-coupleddevice，电荷耦合器件)照相机23，用于确认衬底的X方向及Y方向的位置；及衬底信息检测部24，用于确认衬底的Z方向位置。CCD照相机23能够通过透过加工用透镜22将白色光WL照射至衬底而求出衬底的X方向及Y方向的位置。SD引擎20进而具有算出部25，该算出部25根据由衬底信息检测部24获得的信息，算出衬底1与加工用透镜22间的距离信息。将衬底1与加工用透镜22的相互对向的面之间的距离设为衬底1与加工用透镜22间的距离h。另外，距离信息通过例如反射方式求出。反射方式是指如下方法，即，如图5所示包含例如光源的激光与位置检测元件。对测定对象物照射激光，并利用位置检测元件检测反射的光。例如，通过测定对象物从位置A移动至位置B而改变反射光的轨迹。根据由位置检测元件检测出的位置变化Δd来检测测定对象物的移动距离Δh。加工用透镜22具备压电元件(PiezoelectricElement)26，能够通过压电元件而改变加工用透镜22的Z方向的位置。即，SD引擎20具备根据衬底1与加工用透镜22间的距离h而移动加工用透镜22的AF(Auto Focus，自动聚焦)功能。
在本实施方式中具有多个衬底信息检测部。图6中表示第一衬底信息检测部241及第二衬底信息检测部242。图6中为了简化而省略算出部25。沿衬底的进给方向以等间隔排列加工用透镜22、第一衬底信息检测部241及第二衬底信息检测部242。即，从加工用透镜22至第一衬底信息检测部241为止的距离、与从第一衬底信息检测部241至第二衬底信息检测部242为止的距离相等。更准确地说，透过加工用透镜22的激光光LA、透过第一衬底信息检测部241及第二衬底信息检测部242的光(M1及M2)分别到达衬底的位置成为等间隔。另外，第一衬底信息检测部与第二衬底信息检测部能够同时确认衬底的Z方向位置。
通过具有多个衬底信息检测部，可准确地测定加工用透镜22与衬底1之间的距离h。至于其原因将在以下进行说明。
为了减小激光光照射时的衬底的厚度方向上的激光光的聚光位置的不均，重要的是将加工用透镜22与衬底1间的距离h保持为固定。因此有如下方法，即，在衬底的进给方向上测定加工用透镜22前方的衬底信息，根据该测定结果而调整加工用透镜的Z方向位置并照射激光光。
该情况下，较理想的是衬底与XY平面平行地进给，但存在衬底的进给方向相对于XY平面产生偏移的情况。即，存在衬底未相对于XY平面平行前进而是向Z方向摆动的情况。即，存在如下情况：激光光照射轴的笔直性较差，具有起伏成分。因该起伏成分而存在如下问题，即，根据与实际的激光光照射位置不同的衬底信息而规定加工用透镜的Z方向位置。
图7是用于说明本实施方式的测定方法的概念图。虽表示衬底的进给方向为X方向的情况，但进给方向为Y方向的情况也相同。图7表示相对于衬底的X方向位置的轴的起伏成分f(x)及实际的衬底形状g(x)。加工用透镜与衬底间的距离h(x)以下式表示，即：
h(x)＝f(x)-g(x)··(式1)。
此外，测定衬底信息的衬底的第一部分及第二部分的衬底信息i(x)、j(x)分别以式2及式3表示。
i(x)＝f(x)-g(x+L)··(式2)
j(x)＝f(x)-g(x+2L)··(式3)
其中，衬底的第一部分及第二部分分别从加工用透镜位置离开L及2L，对应于图6的第一衬底信息检测部241及第二衬底信息检测部242。L例如为70mm。
根据(式1)、(式2)及(式3)
h(x)＝f(x)-g(x+L)+g(x+L)-g(x)
＝i(x)+g(x+L)-g(x)
＝i(x)+i(x-L)-j(x-L)··(式4)
(式4)右边的各项能够通过测定求出。例如，如图8般可根据相当于衬底的第一部分及第二部分的衬底信息i(x)及j(x)的信号，使用差分电路、延迟电路及加算电路而求出h(x)。由此，能够如此通过获得衬底上的2部位的衬底信息i(x)及j(x)而求出已除去起伏成分f(x)的加工用透镜与衬底间的距离h(x)。
根据加工用透镜与衬底间的距离h(x)而决定加工用透镜的Z方向位置。例如，通过施加至压电元件的电压而改变加工用透镜的Z方向位置。通过使用压电元件26始终上下移动加工用透镜，能够缩短至将距离信息反映于加工用透镜位置为止的时间。其后，从加工用透镜将激光光照射至衬底。一面沿衬底的进给方向改变衬底位置，一面重复距离信息的算出与激光光的照射来进行衬底的切割。
或，也可在重复衬底信息的检测及距离信息的算出而算出特定长度的距离信息之后，遍及特定长度进行激光光的照射。
如此根据本实施方式，可不受起伏成分影响而求出加工用透镜与衬底间的距离。即，可降低因测定装置的位置变化而产生的距离信息的测定值变化。由于可将加工用透镜对准符合实际衬底状态的Z方向位置，因此激光光的聚光位置不均变小，能够在衬底的厚度方向上均匀地形成SD层。
此处，表示2个衬底信息检测部，但并不限定于2个，存在多个衬底信息检测部即可。
图9中表示本实施方式的变化例。图6中，沿衬底的进给方向，相对于加工用透镜仅在一方向配置有第一衬底信息检测部241及第二衬底信息检测部242。与此相对，在图9所示的变化例中，沿衬底的进给方向以隔着加工用透镜的方式配置衬底信息检测部24。即，第三衬底信息检测部243、第四衬底信息检测部244、加工用透镜22、第一衬底信息检测部241及第二衬底信息检测部242沿衬底的进给方向依序排列。如此相对于加工用透镜在两方向设置衬底信息检测部24，由此不管衬底加工的方向均可准确求出加工用透镜与衬底间的距离。
[符号的说明]
1 衬底
10 工作盘
20 SD引擎
21 加工用激光光源
22 加工用透镜
23 CCD照相机
24 衬底信息检测部
241 第一衬底信息检测部
242 第二衬底信息检测部
243 第三衬底信息检测部
244 第四衬底信息检测部
25 算出部
26 压电元件
30 衬底移动机构
100 激光加工装置

Claims (8)

1.一种切割方法，其特征在于包括如下步骤：
将在第一方向的某一位置作为位置x，所述第一方向是沿衬底的表面的方向，
使用加工用透镜、第一衬底信息检测部以及第二衬底信息检测部，其中，所述第一衬底信息检测部从所述加工用透镜沿所述第一方向相距距离L而设置、且能够沿第二方向测定与所述衬底之间的距离，所述第二方向是与所述衬底的表面垂直的方向，所述第二衬底信息检测部从所述第一衬底信息检测部沿所述第一方向相距距离L而设置、且能够沿所述第二方向测定与所述衬底之间的距离，
沿所述第一方向移动所述衬底时，
沿所述第二方向获取所述衬底的第一部分与所述第一衬底信息检测部之间的距离，而作为第一距离i(x)，
获取沿所述第一方向从所述第一部分相距距离L的所述衬底的第二部分与所述第二衬底信息检测部之间的距离，而作为第二距离j(x)，
根据下式(1)，算出所述加工用透镜与所述衬底之间的沿所述第二方向的距离h(x)，
h(x)＝i(x)+i(x-L)-j(x-L) (1)
根据所述h(x)，从所述加工用透镜将激光光照射至所述衬底。
2.根据权利要求1所述的切割方法，其特征在于：
将检测所述第一距离i(x)的步骤、检测所述第二距离j(x)的步骤、算出所述h(x)的步骤及照射所述激光光的步骤重复多次。
3.根据权利要求1所述的切割方法，其特征在于：
在检测所述第一距离i(x)的步骤、检测所述第二距离j(x)的步骤、及算出所述h(x)的步骤重复之后，进行照射所述激光光的步骤。
4.根据权利要求1所述的切割方法，其特征在于：
根据所述h(x)而调整所述加工用透镜的位置。
5.根据权利要求1所述的切割方法，其特征在于：
所述加工用透镜具备压电元件，且根据所述h(x)而使施加至所述压电元件的电压变化。
6.根据权利要求1所述的切割方法，其特征在于：
同时检测所述第一距离i(x)及所述第二距离j(x)。
7.一种激光加工装置，其特征在于具备：
工作盘，能够保持衬底；
移动机构，能够将所述衬底在第一方向上移动，所述第一方向是沿所述衬底的表面的方向；
加工用激光光源，出射激光光；以及
加工用透镜，能够将所述激光光照射至所述衬底；且
在将在所述第一方向的某一位置作为位置x的情况，
所述激光加工装置还具备：
第一衬底信息检测部，沿所述第一方向与所述加工用透镜相距距离L而设置，能够沿第二方向测定与所述衬底的距离信息，并将该距离信息作为第一距离i(x)，其中所述第二方向是与所述衬底的表面垂直的方向；
第二衬底信息检测部，沿所述第一方向与所述加工用透镜相距距离2L而设置，能够沿所述第二方向测定与所述衬底的距离信息，并将该距离信息作为第二距离j(x)；以及
算出部，根据所述i(x)的信息与所述j(x)的信息，基于下式(1)算出所述衬底与所述加工用透镜间的距离h(x)，
h(x)＝i(x)+i(x-L)-j(x-L) (1)。
8.根据权利要求7所述的激光加工装置，其特征在于还具备：
压电元件，根据所述h(x)，使电压变化，从此调整所述加工用透镜的位置。
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