CN108615762A - The field-effect transistor and integrated circuit of light modulation - Google Patents
The field-effect transistor and integrated circuit of light modulation Download PDFInfo
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- CN108615762A CN108615762A CN201611130453.1A CN201611130453A CN108615762A CN 108615762 A CN108615762 A CN 108615762A CN 201611130453 A CN201611130453 A CN 201611130453A CN 108615762 A CN108615762 A CN 108615762A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 95
- 239000000463 material Substances 0.000 claims description 37
- 238000010276 construction Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
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- 108091006146 Channels Proteins 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
Field-effect transistor the invention discloses a kind of field-effect transistor of light modulation and integrated circuit, the wherein light modulation includes：Semiconductor layer；Source region and drain region, the source region is arranged among the semiconductor layer or the semiconductor layer, and the drain region is arranged among the semiconductor layer or the semiconductor layer；It is formed in the grid structure of the semiconductor layer；It is formed in the light emitting structure of the semiconductor layer, wherein the light emitting structure is for generating photon to excite the electron hole pair in the semiconductor layer.Under the premise of not influencing device off-state current, the conducting electric current of device on the semiconductor by light emitting structure setting is significantly improved using illumination for the field-effect transistor and integrated circuit of the light modulation of the present invention.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to a kind of field-effect transistor of light modulation and integrated electricity
Road.
Background technology
The broad stopband gallium nitride (GaN) direct band gap material has high rigidity, high heat conductance, high electron mobility, stabilization
The advantages that chemical property, smaller dielectric constant and high temperature resistant, so GaN is in light emitting diode, high frequency, high temperature, radioresistance, height
It has a wide range of applications and huge foreground in the power electronic devices such as pressure.
So far, the hetero-junctions high electron mobility transistor (HEMT) based on GaN material, which has had, widely answers
With and research, still, the HEMT of open type can not meet the application requirement of low-power consumption.So to the gold of normally-off GaN material
The research for belonging to oxide semiconductor field effect transistor (MOSFET) is necessary, and is also increasingly taken seriously.
For GaN-MOSFET, source and drain is injected using Si ions (n-type channel) and Mg ions (p-type raceway groove).But
For GaN material, the very high temperature of ion-activated needs is injected, particularly with the Mg ions of p-type raceway groove, activity ratio is not high, this
The conducting electric current of GaN-MOSFET is resulted in receive certain limitation.
Invention content
The present invention is directed to solve one of above-mentioned technical problem at least to a certain extent or at least provide a kind of useful quotient
Industry selects.For this purpose, there is field simple in structure, the high light modulation of conducting electric current effect an object of the present invention is to provide a kind of
Answer transistor.
The field-effect transistor of light modulation according to the ... of the embodiment of the present invention, including：Semiconductor layer；Source region and drain region, it is described
Source region is arranged among the semiconductor layer or the semiconductor layer, the drain region be arranged among the semiconductor layer or
The semiconductor layer；It is formed in the grid structure of the semiconductor layer；It is formed in shining for the semiconductor layer
Structure, wherein the light emitting structure is for generating photon to excite the electron-hole pair in the semiconductor layer.
In one embodiment of the invention, the light emitting structure is located at except the active area of the field-effect transistor.
In one embodiment of the invention, the semiconductor layer includes the semi-conducting material for having direct band gap structure.
In one embodiment of the invention, the semi-conducting material includes that nitride semi-conductor material, arsenide are partly led
Body material, oxide semiconductor material or antimonide semi-conducting material.
In one embodiment of the invention, the light emitting structure is light emitting diode construction.
In one embodiment of the invention, the light emitting diode construction includes luminescent layer, and the luminescent layer is quantum
Trap or multi-quantum pit structure.
In one embodiment of the invention, the material of the emitting layer material and the semiconductor layer belongs to same system
Row.
In one embodiment of the invention, the energy gap of the luminescent layer is wide not less than the forbidden band of the semiconductor layer
Degree.
In one embodiment of the invention, further include：Synchronization structure, for controlling the field-effect transistor and described
Light emitting structure, which synchronizes, to be opened.
In one embodiment of the invention, multiple field-effect transistors share a light emitting structure.
In one embodiment of the invention, the field-effect transistor include MOSFET, MESFET, MISFET and
JFET。
In one embodiment of the invention, the field-effect transistor has planar structure, double-gate structure, FinFET knots
Structure or gate-all-around structure.
From the foregoing, it will be observed that field-effect transistor according to the ... of the embodiment of the present invention at least has the following advantages that：
For traditional independent GaN-MOSFET, the field-effect transistor of light modulation proposed by the present invention will be sent out
Photo structure is arranged on the semiconductor, and under the premise of not influencing device off-state current, leading for device is significantly improved using illumination
Galvanization.
It is another object of the present invention to propose a kind of integrated circuit.
Integrated circuit according to the ... of the embodiment of the present invention includes the field-effect transistor of light modulation described in above-described embodiment.
From the foregoing, it will be observed that integrated circuit according to the ... of the embodiment of the present invention at least has the following advantages that：
For traditional independent GaN-MOSFET, integrated circuit proposed by the present invention exists light emitting structure setting
On semiconductor, under the premise of not influencing device off-state current, the conducting electric current of device is significantly improved using illumination.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obviously, or practice through the invention is recognized.
Description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination following accompanying drawings to embodiment
Obviously and it is readily appreciated that, wherein：
Fig. 1 is the structural schematic diagram of the field-effect transistor of the light modulation of one embodiment of the invention；
Fig. 2 is the structural schematic diagram of the n-channel MOSFET of one embodiment of the invention；
Fig. 3 is the structural schematic diagram of the n-channel MESFET of another embodiment of the present invention；
Fig. 4 is the structural schematic diagram of the field-effect transistor of the light modulation of another embodiment of the present invention；
Fig. 5 is the structural schematic diagram of the p-channel MOSFET of one embodiment of the invention；
Fig. 6 is that the light emitting structure of one embodiment of the invention shares the n-channel MOSFET of grid voltage with field-effect transistor
Structural schematic diagram；
Fig. 7 is the structural schematic diagram of the light emitting diode construction of one embodiment of the invention；
Fig. 8 is the structural schematic diagram of the n-channel MOSFET with synchronization structure of another embodiment of the present invention.
Specific implementation mode
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, do not indicate or imply the indicated device or element must have a particular orientation, with spy
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be machine
Tool connects, and can also be electrical connection；It can be directly connected, can also can be indirectly connected through an intermediary two members
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
In the present invention unless specifically defined or limited otherwise, fisrt feature the "upper" of second feature or "lower"
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " include first special
Sign is right over second feature and oblique upper, or is merely representative of fisrt feature level height and is higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include fisrt feature immediately below second feature and obliquely downward, or be merely representative of
Fisrt feature level height is less than second feature.
One aspect of the present invention proposes a kind of field-effect transistor of light modulation, as shown in Figure 1, including：Semiconductor layer 100；
Source region 200 and drain region 300, source region 200 and drain region 300 can be as shown in Figure 1 arranged among semiconductor layer 100, can also adopt
It is arranged on semiconductor layer 100 with lifting structure, on the one hand, the source electrode and drain electrode of lifting can be obtained by being epitaxially formed
Heavier doping and lower resistivity reduce source-drain series resistance and device on-resistance, promote the ON state performance of device, separately
On the one hand, the distribution that wherein doped chemical can be efficiently controlled by the source electrode and drain electrode for the lifting being epitaxially formed, utilizes tune
The threshold voltage of device processed；The grid structure 400 being formed on semiconductor layer 100；It is formed in shining on semiconductor layer 100
Structure 500.Wherein, light emitting structure 500 is for generating photon with the electron-hole pair in vitalizing semiconductor layer.
The field-effect transistor of the light modulation of the embodiment of the present invention, for n-channel MOSFET, as shown in Fig. 2, when device is led
When logical, grid voltage is that just, light emitting structure 500 generates photon, and photon excites electrons and holes pair in semiconductor layer 100, therein
Electronics flows to channel region, increases the efficient carrier concentration of device channel region, to increase the ON state current of device, enhances device
Performance.Semiconductor layer 100 can be formed in the semi-conducting material on insulator, can also be on Si the compound of extension partly lead
Body material, such as GaN can also be the compound semiconductor materials of self-supporting, such as GaN self-supporting wafer substrates.It needs especially
It, it is noted that the semiconductor layer 100 in Fig. 1 is only a kind of schematic construction, may include monolayer material layer, can also include multilayer material
The bed of material；The channel region of 400 lower section of grid structure can be single layer structure in figure, can also be with two-dimensional electron gas or Two-Dimensional Hole
The multi-layered material structure of gas；Can also include p-type or N-shaped trap in semiconductor layer, the active area of device can be located in trap, with
Reduce electric leakage；These structures all within protection scope of the present invention, not by this exemplary limitation.Grid structure 400 can be such as Fig. 3
Shown only includes grid metal 410 (being at this time metal-semiconductor field effect transistor (MESFET) structure), or packet as shown in Figure 4
It includes grid metal 410 and gate medium 420 is (exhausted for metal-oxide semiconductor fieldeffect transistor (MOSFET) or metal-at this time
Edge body-semiconductor field effect transistor (MISFET) structure), in addition, grid structure 400 can also be the grid formed by p-n junction
(being at this time junction field effect transistor (JFET) structure).In one embodiment of the invention, for n-channel MOSFET, such as
Shown in Fig. 2, due to the attraction of positive grid voltage, electronics will flow to the raceway groove of field-effect transistor, to enhance channel current；And by
In the attraction of the repulsion and substrate negative bias voltage of positive grid voltage, hole will flow to substrate, to generate shadow to channel current
It rings.It should be noted that bias voltage whether is arranged on substrate to be determined according to the concrete condition of circuit, it is not exemplary by this
Limitation.When the device is switched off, light emitting structure 500 and field-effect transistor structure can be with synchronous shutdowns, and light emitting structure 500 will not
Off-state leakage current is had an impact.
For p-channel MOSFET, as shown in figure 5, operation principle is consistent with n-channel MOSFET, only at this time grid voltage be it is negative,
When break-over of device, light emitting structure 500 generates photon, and photon excites electrons and holes pair, sky therein in semiconductor layer 100
Cave flows to channel region, increases the efficient carrier concentration of device channel region, to increase the ON state current of device, enhances device
Energy.To some compound semiconductor materials, such as GaN, ZnO etc. compares n-channel since the injection of p-channel MOSFET is ion-activated
MOSFET is more difficult to, and causes the efficient carrier concentration in regular situation lower channel low, using photonexcited electron-hole to rear,
To efficient carrier concentration promoted effect by highly significant, therefore, structure using the present invention is to this kind of compound semiconductor
The enhancing effect of the channel current for the p-channel MOSFET that material is constituted will be apparent from.It states for simplicity, in following example
In, by taking n-channel MOSFET as an example, and these structures can be used among the MOSFET of p-channel.
As shown in fig. 6, in one embodiment of the invention, light emitting structure 500 is shared identical with field-effect transistor
Gate voltage, when break-over of device, light emitting structure 500 and field-effect transistor synchronize be switched on and off, can be in enhancing light modulation
Field-effect transistor channel current under the premise of, simplify device and circuit structure, reduce the complexity of technique, reduce at
This.
In one embodiment of the invention, light emitting structure 500 is located at except the active area of field-effect transistor.Wherein,
Light emitting structure 500 can be formed in semiconductor layer 100 by epitaxy technique, light emitting structure 500 can also be bonded in device
Except active area.Epitaxy technique concretely metal-organic chemical vapor deposition equipment (MOCVD), ultra-high vacuum CVD
(UHVCVD), rpcvd (RPCVD), molecular beam epitaxy (MBE), atomic layer deposition (ALD) etc..Pass through extension
The film defects of growth are less, and quality is preferable, and thickness control accuracy is high, large-scale production easy to implement, the hair of formation
The cost of photo structure 500 is low, and position control is accurate, therefore is a kind of preferred embodiment.
In one embodiment of the invention, semiconductor layer 100 includes the semi-conducting material for having direct band gap structure.Directly
Tape splicing gap material under the excitation of photon can quick response generate electron-hole pair, and it is with very high internal quantum,
The effect for being conducive to enhance light modulation, promotes device performance.
In one embodiment of the invention, 100 material of semiconductor layer includes that nitride semi-conductor material, arsenide are partly led
Body material, oxide semiconductor material or antimonide semi-conducting material.Wherein, nitride semi-conductor material include GaN, AlGaN,
InGaN、AlN、InN.Arsenide semiconductor material includes GaAs, AlGaAs, InGaAs, InAs.Oxide semiconductor material packet
Include Ga2O3、ZnO、InGaZnO.Antimonide semi-conducting material includes GaSb, AlGaSb, InGaSb, InSb.These materials all have
The band structure of direct band gap quick response can generate electron-hole pair under the excitation of photon.
In one embodiment of the invention, light emitting structure 500 is light emitting diode construction.Wherein, light emitting diode knot
Structure can be as shown in Figure 1 arranged on semiconductor layer 100.Light emitting diode construction can also be to include quantum as shown in Figure 7
The structure of trap or multi-quantum pit structure as luminescent layer.The extraction of an electrode (lower electrode) for light emitting structure 500 can be direct
It draws from semiconductor layer 100, or is drawn from substrate back, another electrode (top electrode) can be drawn by heavily doped layer.
In one embodiment of the invention, the material of emitting layer material and semiconductor layer 100 belongs to a series of, that is, sends out
Photosphere material is nitride corresponding with 100 material of semiconductor layer, arsenide, oxide or phosphide.Using with a series of
Luminescent layer made of material and semiconductor layer 100 can simplify the manufacture craft of light emitting structure, meanwhile, adjust luminescent layer and semiconductor
The energy gap of layer 100 so that the photon that light emitting structure 500 is sent out can effectively be absorbed by semiconductor layer 100, to effectively enhance
The raceway groove conducting electric current of field-effect transistor.
In one embodiment of the invention, the energy gap of luminescent layer is not less than the energy gap of semiconductor layer 100.Hair
When the energy gap of photosphere is not less than the energy gap of semiconductor layer 100, then there is the photon generated enough energy partly to lead
Electron hole pair is excited in body layer 100, its internal quantum is high at this time, and the efficient carrier generated in the semiconductor layer is more,
Raceway groove conducting electric current is bigger.Certainly, even if the energy gap of luminescent layer is less than the energy gap of semiconductor layer, the photon of generation
Can be with the electron-hole pair in vitalizing semiconductor layer, but its internal quantum can be relatively low；, whereas if the taboo of luminescent layer
Bandwidth is much larger than the energy gap of semiconductor layer, although photon has the electron hole in enough energy excitation semiconductor layers
It is right, however its energy more than needed can be converted to heat, cause device heating and energy dissipation.Therefore, the energy gap of luminescent layer
Consistent with the energy gap of semiconductor layer is optimal.
In one embodiment of the invention, further include for control field-effect transistor and light emitting structure 500 synchronize open
The synchronization structure opened.As shown in figure 8, in the present embodiment, an electricity of connecting between light emitting structure 500 and field-effect transistor
Resistance, by modulation grid voltage, with ensure light emitting structure and field-effect transistor can synchronize be switched on and off.It may be noted that
It is that synchronization structure is not limited to a resistance of connecting between light emitting structure 500 and field-effect transistor, as long as can make light emitting structure
The circuit or device architecture of unlatching synchronous with field-effect transistor；Equally, resistance is also not necessarily limited to be connected on power supply and shine
It between structure, can also be connected between power supply and the grid of field-effect transistor, this resistance of connecting is in order to which modulated Field is imitated
Answer the voltage between transistor and light emitting structure so that light emitting structure and field-effect transistor are in suitable operating at voltages
It can.
In one embodiment of the invention, in order to which multiple field-effect transistors are enhancing raceway groove by light emitting structure 500
Under the premise of conducting electric current, multiple field-effect transistors, which are shared a light emitting structure, can simplify device and circuit structure, reduce
Cost.
In one embodiment of the invention, field-effect transistor includes metal-oxide semiconductor fieldeffect transistor
(MOSFET), metal-semiconductor field effect transistor (MESFET), metal-insulator-semiconductor field effect transistor
(MISFET) and junction field effect transistor (JFET).These transistors are grid controlled transistor, the size of conducting electric current by
The influence of efficient carrier concentration in semiconductor layer can increase efficient carrier concentration under the action of photon, increase electric conduction
Stream.
In one embodiment of the invention, field-effect transistor has planar structure (single grid structure), double-gate structure, fin
Shape grid (FinFET) or ring grid (Gate-all-around) structure, i.e. grid structure are the plane, double-gate structure, fin-shaped of routine
Grid structure or ring grid surround the structure of raceway groove.These structures are grid controlled transistors, and the size of conducting electric current is by semiconductor
The influence of efficient carrier concentration in layer can increase efficient carrier concentration under the action of photon, increase conducting electric current.
For traditional independent MOS FET, the field-effect transistor of light modulation proposed by the present invention, by light-emitting junction
Structure is arranged on the semiconductor layer, and under the premise of not influencing device off-state current, the conducting of device is significantly improved using illumination
Electric current.
The embodiment of the present invention also discloses a kind of integrated circuit, includes the field-effect of the light modulation described in above-described embodiment
Transistor.By the promotion of the field-effect transistor ON state performance of light modulation, the performance of integrated circuit can be effectively improved.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
Centainly refer to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any
One or more embodiments or example in can be combined in any suitable manner.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art are not departing from the principle of the present invention and objective
In the case of can make changes, modifications, alterations, and variations to the above described embodiments within the scope of the invention.
Claims (13)
1. a kind of field-effect transistor of light modulation, which is characterized in that including：
Semiconductor layer；
Source region and drain region, the source region is arranged among the semiconductor layer or the semiconductor layer, the drain region setting
Among the semiconductor layer or the semiconductor layer；
It is formed in the grid structure of the semiconductor layer；
It is formed in the light emitting structure of the semiconductor layer, wherein the light emitting structure excites described for generating photon
Electron-hole pair in semiconductor layer.
2. the field-effect transistor of light modulation as described in claim 1, which is characterized in that the light emitting structure is located at the field
Except the active area of effect transistor.
3. the field-effect transistor of light modulation as described in claim 1, which is characterized in that the semiconductor layer includes having directly
The semi-conducting material of tape splicing gap structure.
4. the field-effect transistor of light modulation as claimed in claim 3, which is characterized in that the semi-conducting material includes nitridation
Object semi-conducting material, arsenide semiconductor material, oxide semiconductor material or antimonide semi-conducting material.
5. the field-effect transistor of light modulation as described in claim 1, which is characterized in that the light emitting structure is light-emitting diodes
Pipe structure.
6. the field-effect transistor of light modulation as claimed in claim 5, which is characterized in that the light emitting diode construction includes
Luminescent layer, the luminescent layer are Quantum Well or multi-quantum pit structure.
7. the field-effect transistor of light modulation as claimed in claim 6, which is characterized in that the emitting layer material and described half
The material of conductor layer belongs to a series of.
8. the field-effect transistor of light modulation as claimed in claim 6, which is characterized in that the energy gap of the luminescent layer is not
Less than the energy gap of the semiconductor layer.
9. the field-effect transistor of light modulation as described in claim 1, which is characterized in that further include：
Synchronization structure, for controlling, the field-effect transistor is synchronous with the light emitting structure to be opened.
10. the field-effect transistor of light modulation as described in claim 1, which is characterized in that multiple field-effect transistors
Share a light emitting structure.
11. the field-effect transistor of light modulation as described in claim 1, which is characterized in that the field-effect transistor includes
MOSFET, MESFET, MISFET and JFET.
12. the field-effect transistor of light modulation as described in claim 1, which is characterized in that the field-effect transistor has
Planar structure, double-gate structure, FinFET structure or gate-all-around structure.
13. a kind of integrated circuit, which is characterized in that include the field-effect crystalline substance such as claim 1-12 any one of them light modulations
Body pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611130453.1A CN108615762A (en) | 2016-12-09 | 2016-12-09 | The field-effect transistor and integrated circuit of light modulation |
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|---|---|---|---|---|
| CN101465372A (en) * | 2009-01-08 | 2009-06-24 | 西安电子科技大学 | AlN/GaN enhancement type metal-insulator-semiconductor field effect transistor and method of producing the same |
| CN101814527A (en) * | 2010-04-22 | 2010-08-25 | 复旦大学 | Power device and method for performing conductivity modulation by using photoelectron injection |
| WO2016074642A1 (en) * | 2014-11-14 | 2016-05-19 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrared photon source or photonic-ohmic drain to faciliate de-trapping electrons trapped in deep traps of transistors |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465372A (en) * | 2009-01-08 | 2009-06-24 | 西安电子科技大学 | AlN/GaN enhancement type metal-insulator-semiconductor field effect transistor and method of producing the same |
| CN101814527A (en) * | 2010-04-22 | 2010-08-25 | 复旦大学 | Power device and method for performing conductivity modulation by using photoelectron injection |
| WO2016074642A1 (en) * | 2014-11-14 | 2016-05-19 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrared photon source or photonic-ohmic drain to faciliate de-trapping electrons trapped in deep traps of transistors |
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