CN108615757A - The field-effect transistor and integrated circuit with separate gate structures of light modulation - Google Patents
The field-effect transistor and integrated circuit with separate gate structures of light modulation Download PDFInfo
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- CN108615757A CN108615757A CN201611129053.9A CN201611129053A CN108615757A CN 108615757 A CN108615757 A CN 108615757A CN 201611129053 A CN201611129053 A CN 201611129053A CN 108615757 A CN108615757 A CN 108615757A
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The invention discloses the field-effect transistor and integrated circuit with separate gate structures of a kind of light modulation, the wherein field-effect transistor includes：Semiconductor layer；Source region and drain region, source region is arranged among semiconductor layer or semiconductor layer, and drain region is arranged among semiconductor layer or semiconductor layer；It is formed in the double-gate structure of the semiconductor layer；It is formed in the light emitting structure of the semiconductor layer, wherein the light emitting structure setting is in raceway groove and among the double-gate structure, and the light emitting structure is for generating photon to excite the electron hole pair in the semiconductor layer.Light emitting structure is arranged in raceway groove and between the grid structure of two separation the present invention, since light emitting structure is close to raceway groove, photon can effectively be transmitted to device active region, excite electron hole pair, under the premise of not influencing device off-state current, the conducting electric current of device is significantly improved using illumination.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to a kind of field effect with separate gate structures of light modulation
Answer transistor and integrated circuit.
Background technology
The broad stopband gallium nitride (GaN) direct band gap material has high rigidity, high heat conductance, high electron mobility, stabilization
The advantages that chemical property, smaller dielectric constant and high temperature resistant, so GaN is in light emitting diode, high frequency, high temperature, radioresistance, height
It has a wide range of applications and huge foreground in the power electronic devices such as pressure.
So far, the hetero-junctions high electron mobility transistor (HEMT) based on GaN material, which has had, widely answers
With and research, still, the HEMT of open type can not meet the application requirement of low-power consumption.So to the gold of normally-off GaN material
The research for belonging to oxide semiconductor field effect transistor (MOSFET) is necessary, and is also increasingly taken seriously.
For GaN-MOSFET, source and drain is injected using Si ions (N-type channel) and Mg ions (P-type channel).But
For GaN material, the very high temperature of ion-activated needs is injected, particularly with the Mg ions of P-type channel, activity ratio is not high, this
The conducting electric current of GaN-MOSFET is resulted in receive certain limitation.
Invention content
The present invention is directed to solve one of above-mentioned technical problem at least to a certain extent or at least provide a kind of useful quotient
Industry selects.For this purpose, having with simple in structure, the high light modulation of conducting electric current an object of the present invention is to provide a kind of
The field-effect transistor of separate gate structures.
The field-effect transistor with separate gate structures of light modulation according to the ... of the embodiment of the present invention, including：Semiconductor layer；
Source region and drain region, the source region is arranged among the semiconductor layer or the semiconductor layer, and the drain region is arranged in institute
It states among semiconductor layer or the semiconductor layer；Two grid structures of the semiconductor layer are formed in, it is described two
Grid structure is separation；It is formed in the light emitting structure of the semiconductor layer, wherein the light emitting structure setting is described two
Between grid structure, the light emitting structure is for generating photon to excite the electron-hole pair in the semiconductor layer.
In one embodiment of the invention, the semiconductor layer includes the semi-conducting material for having direct band gap structure.
In one embodiment of the invention, the semi-conducting material includes that nitride semi-conductor material, arsenide are partly led
Body material, oxide semiconductor material or antimonide semi-conducting material.
In one embodiment of the invention, the light emitting structure is light emitting diode construction.
In one embodiment of the invention, the light emitting diode construction includes luminescent layer, and the luminescent layer is quantum
Trap or multi-quantum pit structure.
In one embodiment of the invention, the material of the emitting layer material and the semiconductor layer belongs to same system
Row.
In one embodiment of the invention, the energy gap of the luminescent layer is wide not less than the forbidden band of the semiconductor layer
Degree.
In one embodiment of the invention, further include：Synchronization structure, for controlling the field-effect transistor and described
Light emitting structure, which synchronizes, to be opened.
In one embodiment of the invention, the field-effect transistor include MOSFET, MESFET, MISFET and
JFET。
From the foregoing, it will be observed that field-effect transistor according to the ... of the embodiment of the present invention at least has the following advantages that：
For traditional independent GaN-MOSFET, the field with separate gate structures of light modulation proposed by the present invention
Effect transistor, can be effective since light emitting structure is close to raceway groove between the grid structure detached at two is arranged in light emitting structure
Photon is transmitted to device active region, excitation electron-hole pair utilizes illumination pole under the premise of not influencing device off-state current
The earth improves the conducting electric current of device.
It is another object of the present invention to propose a kind of integrated circuit.
Integrated circuit according to the ... of the embodiment of the present invention, including light modulation described in above-described embodiment have separate gate structures
Field-effect transistor.
From the foregoing, it will be observed that integrated circuit according to the ... of the embodiment of the present invention at least has the following advantages that：
For traditional independent GaN-MOSFET, integrated circuit proposed by the present invention exists light emitting structure setting
Between the grid structure of two separation, since light emitting structure is close to raceway groove, photon can be effectively transmitted to device active region, excitation electricity
Son-hole pair significantly improves the conducting electric current of device using illumination under the premise of not influencing device off-state current.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obviously, or practice through the invention is recognized.
Description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination following accompanying drawings to embodiment
Obviously and it is readily appreciated that, wherein：
Fig. 1 is the structural representation of the field-effect transistor with separate gate structures of the light modulation of one embodiment of the invention
Figure；
Fig. 2 is the structural schematic diagram of the N-channel field effect transistor of one embodiment of the invention；
Fig. 3 is the structural schematic diagram of the P-channel field-effect transistor (PEFT) transistor of one embodiment of the invention；
Fig. 4 is that the field-effect transistor with separate gate structures of the light modulation of another embodiment of the present invention shares grid voltage
Structural schematic diagram
Fig. 5 is the structural schematic diagram of the light emitting diode construction of one embodiment of the invention；
Fig. 6 is the structural schematic diagram of the N-channel field effect transistor with synchronization structure of one embodiment of the invention.
Specific implementation mode
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, do not indicate or imply the indicated device or element must have a particular orientation, with spy
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be machine
Tool connects, and can also be electrical connection；It can be directly connected, can also can be indirectly connected through an intermediary two members
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
In the present invention unless specifically defined or limited otherwise, fisrt feature the "upper" of second feature or "lower"
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " include first special
Sign is right over second feature and oblique upper, or is merely representative of fisrt feature level height and is higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include fisrt feature immediately below second feature and obliquely downward, or be merely representative of
Fisrt feature level height is less than second feature.
One aspect of the present invention proposes a kind of field-effect transistor with separate gate structures of light modulation, as shown in Figure 1, packet
It includes：Semiconductor layer 100；Source region 200 and drain region 300, source region 200 and drain region 300 can be as shown in Figure 1 arranged in semiconductor layer
Among 100, lifting structure can also be used to be arranged on semiconductor layer 100, on the one hand, the source electrode and drain electrode of lifting can lead to
It crosses and is epitaxially formed, obtain heavier doping and lower resistivity, reduce source-drain series resistance and device on-resistance, lifter
The ON state performance of part；On the other hand, wherein doping member can be efficiently controlled by the source electrode and drain electrode for the lifting being epitaxially formed
The distribution of element, utilizes the threshold voltage of modulation device；Two grid structure (the first grid structures being formed on semiconductor layer 100
410 and second grid structure 420)；The light emitting structure 500 being formed on semiconductor layer 100.Wherein, the setting of light emitting structure 500 exists
Between first grid structure 410 and the second grid structure 420, light emitting structure 500 is for generating photon in vitalizing semiconductor layer 100
Electron-hole pair.
The field-effect transistor with separate gate structures of the light modulation of the embodiment of the present invention, it is brilliant for N-channel field-effect
Body pipe, as shown in Fig. 2, when break-over of device, grid voltage is that just, light emitting structure 500 generates photon, and photon is in semiconductor layer 100
Electrons and holes pair, electronics therein are excited to flow to channel region, increase the efficient carrier concentration of device channel region, to increase
The ON state current of device enhances device performance.Semiconductor layer 100 can be formed in the semi-conducting material on insulator, also may be used
To be the compound semiconductor materials of extension on Si, such as GaN, the compound semiconductor materials of self-supporting, such as GaN can also be
Self-supporting wafer substrates.Grid structure can only include that grid metal (is tied for metal-semiconductor field effect transistor (MESFET) at this time
Structure), or including grid metal and gate medium (be at this time metal-oxide semiconductor fieldeffect transistor (MOSFET) or metal-
Insulator-semiconductor field effect transistor (MISFET) structure), in addition, grid structure 400 can also be the grid formed by P-N junction
Pole (being at this time junction field effect transistor (JFET) structure).In one embodiment of the invention, light emitting structure 500 includes shape
At the luminescent layer 510 on drift region (regions N- in Fig. 2)；The metal contact layer 520 being arranged on luminescent layer 510, setting
Electrode on metal contact layer 520.Wherein, electrode can also be drawn by heavily doped layer.
In one embodiment of the invention, for N-channel field effect transistor, as shown in Fig. 2, due to the suction of positive grid voltage
Draw, electronics will flow to the raceway groove of field-effect transistor, to enhance channel current；And the repulsion and substrate due to positive grid voltage are negative
The attraction of bias voltage, hole will flow to substrate, to be had an impact to channel current.It should be noted that on substrate
Bias voltage, which whether is arranged, to be determined according to the concrete condition of circuit, not by this exemplary limitation.When the device is switched off, it shines
Structure 500 and field-effect transistor structure can will not generate shadow with synchronous shutdown, light emitting structure 500 to off-state leakage current
It rings.
For P-channel field-effect transistor (PEFT) transistor, as shown in figure 3, operation principle is consistent with N-channel field effect transistor, only
Grid voltage is negative at this time, and when break-over of device, light emitting structure 500 generates photon, and photon excites electronics and sky in semiconductor layer 100
Cave pair, hole therein flow to channel region, increase the efficient carrier concentration of device channel region, to increase the ON state electricity of device
Stream enhances device performance.To some compound semiconductor materials, such as GaN, ZnO etc., due to P-channel field-effect transistor (PEFT) transistor
Inject it is ion-activated be more difficult to than N-channel field effect transistor, cause the efficient carrier concentration in regular situation lower channel low, adopt
After photon excitation electron-hole pair, to efficient carrier concentration promoted effect by highly significant, therefore, using the present invention
The structure enhancing effect of the channel current of P-channel field-effect transistor (PEFT) transistor that this kind of compound semiconductor materials is constituted will more
Obviously.
It states for simplicity, in following example, by taking N-channel field effect transistor as an example, and these structures
To be used among P-channel field-effect transistor (PEFT) transistor.
As shown in figure 4, in one embodiment of the invention, light emitting structure 500 is shared identical with field-effect transistor
Gate voltage, when break-over of device, light emitting structure 500 and field-effect transistor synchronize be switched on and off, can be in enhancing light modulation
The field-effect transistor with separate gate structures channel current under the premise of, simplify device and circuit structure, reduce technique
Complexity, reduce cost.
In one embodiment of the invention, semiconductor layer 100 includes the semi-conducting material for having direct band gap structure.Directly
Tape splicing gap material under the excitation of photon can quick response generate electron-hole pair, and it is with very high internal quantum,
The effect for being conducive to enhance light modulation, promotes device performance.
In one embodiment of the invention, 100 material of semiconductor layer includes that nitride semi-conductor material, arsenide are partly led
Body material, oxide semiconductor material or antimonide semi-conducting material.Wherein, nitride semi-conductor material include GaN, AlGaN,
InGaN、AlN、InN.Arsenide semiconductor material includes GaAs, AlGaAs, InGaAs, InAs.Oxide semiconductor material packet
Include Ga2O3、ZnO、InGaZnO.Antimonide semi-conducting material includes GaSb, AlGaSb, InGaSb, InSb.These materials all have
The band structure of direct band gap quick response can generate electron-hole pair under the excitation of photon.
In one embodiment of the invention, light emitting structure 500 is light emitting diode construction.Wherein, light emitting diode knot
Structure can be as shown in Figure 1 arranged on semiconductor layer 100.Light emitting diode construction can also be to include quantum as shown in Figure 5
The structure of trap or multi-quantum pit structure as luminescent layer.The extraction of an electrode (lower electrode) for light emitting structure 500 can be direct
It draws from semiconductor layer 100, or is drawn from substrate back, another electrode (top electrode) can be drawn by heavily doped layer.
In one embodiment of the invention, the material of emitting layer material and semiconductor layer 100 belongs to a series of, that is, sends out
Photosphere material is nitride corresponding with 100 material of semiconductor layer, arsenide, oxide or phosphide.Using with a series of
Luminescent layer made of material and semiconductor layer 100 can simplify the manufacture craft of light emitting structure, meanwhile, adjust luminescent layer and semiconductor
The energy gap of layer 100 so that the photon that light emitting structure 500 is sent out can effectively be absorbed by semiconductor layer 100, to effectively enhance
The raceway groove conducting electric current of field-effect transistor.
In one embodiment of the invention, the energy gap of luminescent layer is not less than the energy gap of semiconductor layer 100.Hair
When the energy gap of photosphere is not less than the energy gap of semiconductor layer 100, then there is the photon generated enough energy partly to lead
Electron hole pair is excited in body layer 100, its internal quantum is high at this time, and the efficient carrier generated in the semiconductor layer is more,
Raceway groove conducting electric current is bigger.Certainly, even if the energy gap of luminescent layer is less than the energy gap of semiconductor layer, the photon of generation
Can be with the electron-hole pair in vitalizing semiconductor layer, but its internal quantum can be relatively low；, whereas if the taboo of luminescent layer
Bandwidth is much larger than the energy gap of semiconductor layer, although photon has the electron hole in enough energy excitation semiconductor layers
It is right, however its energy more than needed can be converted to heat, cause device heating and energy dissipation.Therefore, the energy gap of luminescent layer
Consistent with the energy gap of semiconductor layer is optimal.
In one embodiment of the invention, further include for control field-effect transistor and light emitting structure 500 synchronize open
The synchronization structure opened.As shown in fig. 6, in the present embodiment, an electricity of connecting between light emitting structure 500 and field-effect transistor
Resistance, by modulation grid voltage, with ensure light emitting structure and field-effect transistor can synchronize be switched on and off.It may be noted that
It is that synchronization structure is not limited to a resistance of connecting between light emitting structure 500 and field-effect transistor, as long as can make light emitting structure
The circuit or device architecture of unlatching synchronous with field-effect transistor；Equally, resistance is also not necessarily limited to be connected on power supply and shine
It between structure, can also be connected between power supply and the grid of field-effect transistor, this resistance of connecting is in order to which modulated Field is imitated
Answer the voltage between transistor and light emitting structure so that light emitting structure and field-effect transistor are in suitable operating at voltages
It can.
In one embodiment of the invention, in order to which multiple field-effect transistors are enhancing raceway groove by light emitting structure 500
Under the premise of conducting electric current, multiple field-effect transistors, which are shared a light emitting structure, can simplify device and circuit structure, reduce
Cost.
In one embodiment of the invention, field-effect transistor includes metal-oxide semiconductor fieldeffect transistor
(MOSFET), metal-semiconductor field effect transistor (MESFET), metal-insulator-semiconductor field effect transistor
(MISFET) and junction field effect transistor (JFET).These transistors are grid controlled transistor, the size of conducting electric current by
The influence of efficient carrier concentration in semiconductor layer can increase efficient carrier concentration under the action of photon, increase electric conduction
Stream.
For traditional independent MOS FET, the field-effect with separate gate structures of light modulation proposed by the present invention
Transistor, since light emitting structure is close to raceway groove, can be transmitted effectively between the grid structure detached at two is arranged in light emitting structure
Photon excites electron-hole pair, under the premise of not influencing device off-state current, greatly using illumination to device active region
Improve the conducting electric current of device.
The embodiment of the present invention also discloses a kind of integrated circuit, including the light modulation described in above-described embodiment have point
Field-effect transistor from grid structure.Pass through carrying for the field-effect transistor ON state performance with separate gate structures of light modulation
It rises, the performance of integrated circuit can be effectively improved.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
Centainly refer to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any
One or more embodiments or example in can be combined in any suitable manner.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art are not departing from the principle of the present invention and objective
In the case of can make changes, modifications, alterations, and variations to the above described embodiments within the scope of the invention.
Claims (10)
1. a kind of field-effect transistor with separate gate structures of light modulation, which is characterized in that including：
Semiconductor layer；
Source region and drain region, the source region is arranged among the semiconductor layer or the semiconductor layer, the drain region setting
Among the semiconductor layer or the semiconductor layer；
Two grid structures of the semiconductor layer are formed in, described two grid structures are separation；
It is formed in the light emitting structure of the semiconductor layer, wherein the light emitting structure is arranged between described two grid structures,
The light emitting structure is for generating photon to excite the electron-hole pair in the semiconductor layer.
2. the field-effect transistor with separate gate structures of light modulation as described in claim 1, which is characterized in that described half
Conductor layer includes the semi-conducting material for having direct band gap structure.
3. the field-effect transistor with separate gate structures of light modulation as claimed in claim 2, which is characterized in that described half
Conductor material includes nitride semi-conductor material, arsenide semiconductor material, oxide semiconductor material or antimonide semiconductor
Material.
4. the field-effect transistor with separate gate structures of light modulation as described in claim 1, which is characterized in that the hair
Photo structure is light emitting diode construction.
5. the field-effect transistor with separate gate structures of light modulation as claimed in claim 4, which is characterized in that the hair
Optical diode structure includes luminescent layer, and the luminescent layer is Quantum Well or multi-quantum pit structure.
6. the field-effect transistor with separate gate structures of light modulation as claimed in claim 5, which is characterized in that the hair
Photosphere material and the material of the semiconductor layer belong to a series of.
7. the field-effect transistor with separate gate structures of light modulation as claimed in claim 6, which is characterized in that the hair
The energy gap of photosphere is not less than the energy gap of the semiconductor layer.
8. the field-effect transistor with separate gate structures of light modulation as described in claim 1, which is characterized in that also wrap
It includes：
Synchronization structure, for controlling, the field-effect transistor is synchronous with the light emitting structure to be opened.
9. the field-effect transistor with separate gate structures of light modulation as described in claim 1, which is characterized in that the field
Effect transistor includes MOSFET, MESFET, MISFET and JFET.
10. a kind of integrated circuit, which is characterized in that having including light modulation as claimed in any one of claims 1-9 wherein is divided
Field-effect transistor from grid structure.
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| CN201611129053.9A CN108615757A (en) | 2016-12-09 | 2016-12-09 | The field-effect transistor and integrated circuit with separate gate structures of light modulation |
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| CN108615757A true CN108615757A (en) | 2018-10-02 |
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| CN114242771A (en) * | 2021-11-30 | 2022-03-25 | 厦门大学 | Structure for enhancing conduction characteristic of silicon carbide power device by light |
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Application publication date: 20181002 |