CN108615761A - The field-effect transistor and integrated circuit of photon enhancing - Google Patents
The field-effect transistor and integrated circuit of photon enhancing Download PDFInfo
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- CN108615761A CN108615761A CN201611129636.1A CN201611129636A CN108615761A CN 108615761 A CN108615761 A CN 108615761A CN 201611129636 A CN201611129636 A CN 201611129636A CN 108615761 A CN108615761 A CN 108615761A
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- 230000002708 enhancing effect Effects 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 238000002955 isolation Methods 0.000 claims abstract description 30
- 238000000926 separation method Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 8
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- 230000001360 synchronised effect Effects 0.000 claims description 3
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- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
Abstract
The invention discloses the field-effect transistors and integrated circuit of a kind of enhancing of photon, and the field-effect transistor that wherein photon enhances includes：Semiconductor layer；Source region and drain region, the source region is arranged among the semiconductor layer or the semiconductor layer, and the drain region is arranged among the semiconductor layer or the semiconductor layer；It is formed in the grid structure of the semiconductor layer；It is formed in the isolation channel of the periphery in the source region and the drain region；The light emitting structure being formed among at least partly described isolation channel, the light emitting structure is for generating photon to excite the electron hole pair in the semiconductor layer；The separation layer being formed between the isolation channel and the light emitting structure.The field-effect transistor and integrated circuit of the photon enhancing of the present invention, among the isolation channel around raceway groove is arranged in light emitting structure, under the premise of not influencing device off-state current, the conducting electric current of device is significantly improved using illumination.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to the field-effect transistor of a kind of photon enhancing and integrated
Circuit.
Background technology
The broad stopband gallium nitride (GaN) direct band gap material has high rigidity, high heat conductance, high electron mobility, stabilization
The advantages that chemical property, smaller dielectric constant and high temperature resistant, so GaN is in light emitting diode, high frequency, high temperature, radioresistance, height
It has a wide range of applications and huge foreground in the power electronic devices such as pressure.
So far, the hetero-junctions high electron mobility transistor (HEMT) based on GaN material, which has had, widely answers
With and research, still, the HEMT of open type can not meet the application requirement of low-power consumption.So to the gold of normally-off GaN material
The research for belonging to oxide semiconductor field effect transistor (MOSFET) is necessary, and is also increasingly taken seriously.
For GaN-MOSFET, source and drain is injected using Si ions (n-type channel) and Mg ions (p-type raceway groove).But
For GaN material, the very high temperature of ion-activated needs is injected, particularly with the Mg ions of p-type raceway groove, activity ratio is not high, this
The conducting electric current of GaN-MOSFET is resulted in receive certain limitation.
Invention content
The present invention is directed to solve one of above-mentioned technical problem at least to a certain extent or at least provide a kind of useful quotient
Industry selects.For this purpose, an object of the present invention is to provide a kind of fields with photon enhancing simple in structure, conducting electric current is high
Effect transistor.
The field-effect transistor of photon enhancing according to the ... of the embodiment of the present invention, including：Semiconductor layer；Source region and drain region, institute
Source region setting is stated among the semiconductor layer or the semiconductor layer, the drain region are arranged among the semiconductor layer
Or the semiconductor layer；It is formed in the grid structure of the semiconductor layer；It is formed in the source region and the drain region
The isolation channel of periphery；The light emitting structure being formed among at least partly described isolation channel, the light emitting structure is for generating photon
To excite the electron-hole pair in the semiconductor layer；The separation layer being formed between the isolation channel and the light emitting structure.
In one embodiment of the invention, the isolation channel includes：
It is formed in the heavily doped layer of the isolation groove groove wall；The metal contact layer being formed on the heavily doped layer.
In one embodiment of the invention, the semiconductor layer includes the semi-conducting material for having direct band gap structure.
In one embodiment of the invention, the semi-conducting material includes that nitride semi-conductor material, arsenide are partly led
Body material, oxide semiconductor material or antimonide semi-conducting material.
In one embodiment of the invention, the light emitting structure is light emitting diode construction.
In one embodiment of the invention, the light emitting diode construction includes luminescent layer, and the luminescent layer is quantum
Trap or multi-quantum pit structure.
In one embodiment of the invention, the material of the emitting layer material and the semiconductor layer belongs to same system
Row.
In one embodiment of the invention, the energy gap of the luminescent layer is wide not less than the forbidden band of the semiconductor layer
Degree.
In one embodiment of the invention, further include：Synchronization structure, for controlling the field-effect transistor and described
Light emitting structure, which synchronizes, to be opened.
In one embodiment of the invention, multiple field-effect transistors share a light emitting structure.
In one embodiment of the invention, the field-effect transistor includes MOSFET, MESFET, MISFET and
JFET。
In one embodiment of the invention, the field-effect transistor has planar structure, double-gate structure, FinFET knots
Structure or gate-all-around structure.
From the foregoing, it will be observed that field-effect transistor according to the ... of the embodiment of the present invention at least has the following advantages that：
For traditional independent GaN-MOSFET, the field-effect transistor of photon enhancing proposed by the present invention will
Light emitting structure is arranged among the isolation channel around raceway groove, very big using illumination under the premise of not influencing device off-state current
Ground improves the conducting electric current of device.
It is another object of the present invention to propose a kind of integrated circuit.
Integrated circuit according to the ... of the embodiment of the present invention, including described in above-described embodiment photon enhancing field effect transistor
Pipe.
From the foregoing, it will be observed that integrated circuit according to the ... of the embodiment of the present invention at least has the following advantages that：
For traditional independent GaN-MOSFET, integrated circuit proposed by the present invention exists light emitting structure setting
Among isolation channel around raceway groove, under the premise of not influencing device off-state current, leading for device is significantly improved using illumination
Galvanization.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obviously, or practice through the invention is recognized.
Description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination following accompanying drawings to embodiment
Obviously and it is readily appreciated that, wherein：
Fig. 1 is the structural schematic diagram of the field-effect transistor of the photon enhancing of one embodiment of the invention；
Fig. 2 is the structural schematic diagram of the n-channel field-effect transistor of one embodiment of the invention；
Fig. 3 is the structural schematic diagram of the n-channel field-effect transistor of another embodiment of the present invention；
Fig. 4 is the structural schematic diagram of the p-channel field-effect transistor of one embodiment of the invention；
Fig. 5 is the structural schematic diagram of the n-channel field-effect transistor of another embodiment of the present invention；
Fig. 6 is the structural schematic diagram of the diode structure of one embodiment of the invention；
Fig. 7 is the structural schematic diagram of the n-channel field-effect transistor with synchronization structure of one embodiment of the invention.
Specific implementation mode
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, do not indicate or imply the indicated device or element must have a particular orientation, with spy
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be machine
Tool connects, and can also be electrical connection；It can be directly connected, can also can be indirectly connected through an intermediary two members
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
In the present invention unless specifically defined or limited otherwise, fisrt feature the "upper" of second feature or "lower"
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " include first special
Sign is right over second feature and oblique upper, or is merely representative of fisrt feature level height and is higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include fisrt feature immediately below second feature and obliquely downward, or be merely representative of
Fisrt feature level height is less than second feature.
One aspect of the present invention proposes a kind of field-effect transistor of photon enhancing, as shown in Figure 1, including：Semiconductor layer
100；Source region 200 and drain region 300, source region 200 and drain region 300 can be as shown in Figure 1 arranged among semiconductor layer 100, may be used also
With using lifting structure be arranged on semiconductor layer 100, on the one hand, the source electrode and drain electrode of lifting can by being epitaxially formed,
Heavier doping and lower resistivity are obtained, source-drain series resistance and device on-resistance is reduced, promotes the ON state of device
Energy；On the other hand, the distribution of wherein doped chemical can be efficiently controlled by the source electrode and drain electrode for the lifting being epitaxially formed, profit
With the threshold voltage of modulation device；The grid structure 400 being formed on semiconductor layer 100；It is formed in source region 200 and drain region 300
Periphery isolation channel 500, isolation channel 500 can be technical field of semiconductors be commonly used in isolation active area shallow-trench isolation
(STI) or the groove used in deep trench isolation (DTI)；The light emitting structure 600 being formed among being at least partially isolated slot 500；It is formed
Separation layer 700 between isolation channel 500 and light emitting structure 600.Wherein, light emitting structure 500 is for generating photon to excite half
Electron-hole pair in conductor layer 100, light emitting structure 500 can also be formed among whole isolation channels 500, light emitting structure 500
Effect it is more preferable, structure and technique are also simpler.
The field-effect transistor of the photon enhancing of the embodiment of the present invention, for the field-effect transistor of n-channel, such as Fig. 2 institutes
Show, when break-over of device, grid voltage is that just, light emitting structure 600 generates photon, and photon excites electronics and sky in semiconductor layer 100
Cave pair, electronics therein flow to channel region, increase the efficient carrier concentration of device channel region, to increase the ON state electricity of device
Stream enhances device performance.Semiconductor layer 100 can be formed in the semi-conducting material on insulator, can also be extension on Si
Compound semiconductor materials, such as GaN can also be the compound semiconductor materials of self-supporting, as GaN self-supporting chips serve as a contrast
Bottom.It it is important to note that semiconductor layer 100 is only a kind of schematic construction, may include monolayer material layer, can also include more
Layer of material；The channel region of 400 lower section of grid structure can be single layer structure in figure, can also be with two-dimensional electron gas or two dimension
The multi-layered material structure of hole gas；Can also include p-type or N-shaped trap in semiconductor layer, the active area of device can be located at trap
In, to reduce electric leakage；These structures all within protection scope of the present invention, not by this exemplary limitation.Grid structure 400 can be with
Only include grid metal (being at this time metal-semiconductor field effect transistor (MESFET) structure), or including grid metal and gate medium
(it is at this time metal-oxide semiconductor fieldeffect transistor (MOSFET) or metal-insulator-semiconductor field effect transistor
(MISFET) structure), in addition, grid structure can also be that the grid formed by p-n junction (is at this time junction field effect transistor
(JFET) structure).These transistors are grid controlled transistor, the size of conducting electric current in by semiconductor layer efficient carrier it is dense
The influence of degree can increase efficient carrier concentration under the action of photon, increase conducting electric current.Isolation channel 500 includes heavy doping
Layer 510, heavily doped layer 510 are fluted body, and metal contact layer 520 is formed on heavily doped layer 510.Light emitting structure 600 wraps
It includes and luminescent layer 610 on heavily doped layer 510 is formed in by extension or bonding technology；Be formed on luminescent layer 610
One doped layer 620；Electrode 630 on the first doped layer 620 is set.In one embodiment of the invention, the first doping
Layer 620 is heavily doped layer, is conducive to pass through Ohmic contact extraction electrode 630.Isolation channel 500 side wall and light emitting structure 600 it
Between pass through fill spacer medium formed separation layer 700.Light emitting structure 600 shown in Fig. 2 has shared the heavy doping of isolation channel 500
Layer, to reduce device complexity.As shown in figure 3, in another embodiment of the present invention, isolation channel 500 and light-emitting junction
The structure of structure 600 is similar with Fig. 2, difference lies in metal contact layer 520 be fluted body when, light emitting structure 600 without and isolation channel
500 shared heavily doped layers, therefore the second doped layer 640 is provided between metal contact layer 520 and luminescent layer 610.In this hair
In bright one embodiment, the second doped layer 640 is heavily doped layer, is conducive to by forming Ohmic contact with metal contact layer 520
To extraction electrode.
In one embodiment of the invention, for n-channel field-effect transistor, due to the attraction of positive grid voltage, electronics will
The raceway groove for flowing to field-effect transistor, to enhance channel current；And the repulsion due to positive grid voltage and substrate negative bias voltage
Attraction, hole will flow to substrate, to be had an impact to channel current.It should be noted that whether being arranged on substrate
Bias voltage can be determined according to the concrete condition of circuit, not by this exemplary limitation.When the device is switched off, light emitting structure 500
Off-state leakage current will not can be had an impact with synchronous shutdown, light emitting structure 500 with field-effect transistor structure.
For p-channel field-effect transistor, as shown in figure 4, operation principle is consistent with n-channel field-effect transistor, only
Grid voltage is negative at this time, and when break-over of device, light emitting structure 600 generates photon, and photon excites electronics and sky in semiconductor layer 100
Cave pair, hole therein flow to channel region, increase the efficient carrier concentration of device channel region, to increase the ON state electricity of device
Stream enhances device performance.To some compound semiconductor materials, such as GaN, ZnO etc., due to p-channel field-effect transistor
Inject it is ion-activated be more difficult to than n-channel field-effect transistor, cause the efficient carrier concentration in regular situation lower channel low, adopt
After photon excitation electron-hole pair, to efficient carrier concentration promoted effect by highly significant, therefore, using the present invention
The structure enhancing effect of the channel current of p-channel field-effect transistor that this kind of compound semiconductor materials is constituted will more
Obviously.
It states for simplicity, in following example, by taking n-channel field-effect transistor as an example, and these structures
With among the field-effect transistor of p-channel.
As shown in figure 5, in one embodiment of the invention, light emitting structure 600 is shared identical with field-effect transistor
Gate voltage, when break-over of device, light emitting structure 600 and field-effect transistor synchronize be switched on and off, can increase in enhancing photon
Under the premise of the channel current of strong field-effect transistor, simplify device and circuit structure, reduce the complexity of technique, reduce at
This.
In one embodiment of the invention, semiconductor layer 100 includes the semi-conducting material for having direct band gap structure.Directly
Tape splicing gap material under the excitation of photon can quick response generate electron-hole pair, and it is with very high internal quantum,
The effect for being conducive to enhance light modulation, promotes device performance.
In one embodiment of the invention, 100 material of semiconductor layer includes that nitride semi-conductor material, arsenide are partly led
Body material, oxide semiconductor material or antimonide semi-conducting material.Wherein, nitride semi-conductor material include GaN, AlGaN,
InGaN、AlN、InN.Arsenide semiconductor material includes GaAs, AlGaAs, InGaAs, InAs.Oxide semiconductor material packet
Include Ga2O3、ZnO、InGaZnO.Antimonide semi-conducting material includes GaSb, AlGaSb, InGaSb, InSb.These materials all have
The band structure of direct band gap quick response can generate electron-hole pair under the excitation of photon.
In one embodiment of the invention, light emitting structure 600 is light emitting diode construction.Wherein, light emitting diode knot
Structure can be arranged in isolation channel as shown in Figure 1.Light emitting diode construction can also be to include Quantum Well or volume as shown in Figure 6
Structure of the sub- well structure as luminescent layer.The extraction of an electrode (lower electrode) for light emitting structure 600 can be directly from semiconductor
Layer 100 is drawn, or is drawn from substrate back, another electrode (top electrode) can be drawn by heavily doped layer.
In one embodiment of the invention, the material of emitting layer material and semiconductor layer 100 belongs to a series of, that is, sends out
Photosphere material is nitride corresponding with 100 material of semiconductor layer, arsenide, oxide or phosphide.Using with a series of
Luminescent layer made of material and semiconductor layer 100 can simplify the manufacture craft of light emitting structure, meanwhile, adjust luminescent layer and semiconductor
The energy gap of layer 100 so that the photon that light emitting structure 500 is sent out can effectively be absorbed by semiconductor layer 100, to effectively enhance
The raceway groove conducting electric current of field-effect transistor.
In one embodiment of the invention, the energy gap of luminescent layer is not less than the energy gap of semiconductor layer 100.Hair
When the energy gap of photosphere is not less than the energy gap of semiconductor layer 100, then there is the photon generated enough energy partly to lead
Electron hole pair is excited in body layer 100, its internal quantum is high at this time, and the efficient carrier generated in the semiconductor layer is more,
Raceway groove conducting electric current is bigger.Certainly, even if the energy gap of luminescent layer is less than the energy gap of semiconductor layer, the photon of generation
Can be with the electron-hole pair in vitalizing semiconductor layer, but its internal quantum can be relatively low；, whereas if the taboo of luminescent layer
Bandwidth is much larger than the energy gap of semiconductor layer, although photon has the electron hole in enough energy excitation semiconductor layers
It is right, however its energy more than needed can be converted to heat, cause device heating and energy dissipation.Therefore, the energy gap of luminescent layer
Consistent with the energy gap of semiconductor layer is optimal.
In one embodiment of the invention, further include for control field-effect transistor and light emitting structure 600 synchronize open
The synchronization structure opened.As shown in fig. 7, in the present embodiment, an electricity of connecting between light emitting structure 600 and field-effect transistor
Resistance, by modulation grid voltage, with ensure light emitting structure and field-effect transistor can synchronize be switched on and off.It may be noted that
It is that synchronization structure is not limited to a resistance of connecting between light emitting structure 600 and field-effect transistor, as long as can make light emitting structure
The circuit or device architecture of unlatching synchronous with field-effect transistor；Equally, resistance is also not necessarily limited to be connected on power supply and shine
It between structure, can also be connected between power supply and the grid of field-effect transistor, this resistance of connecting is in order to which modulated Field is imitated
Answer the voltage between transistor and light emitting structure so that light emitting structure and field-effect transistor are in suitable operating at voltages
It can.
In one embodiment of the invention, field-effect transistor includes metal-oxide semiconductor fieldeffect transistor
(MOSFET), metal-semiconductor field effect transistor (MESFET), metal-insulator-semiconductor field effect transistor
(MISFET) and junction field effect transistor (JFET).These transistors are grid controlled transistor, the size of conducting electric current by
The influence of efficient carrier concentration in semiconductor layer can increase efficient carrier concentration under the action of photon, increase electric conduction
Stream.
In one embodiment of the invention, field-effect transistor has planar structure, double-gate structure, fin-shaped grid
(FinFET) or ring grid (Gate-all-around) structure, i.e., grid structure is conventional plane, double-gate structure, fin-shaped grid knot
Structure or ring grid surround the structure of raceway groove.These structures are grid controlled transistors, and the size of conducting electric current is in by semiconductor layer
The influence of efficient carrier concentration can increase efficient carrier concentration under the action of photon, increase conducting electric current.
For traditional independent MOS FET, the field-effect transistor of photon enhancing proposed by the present invention will shine
Structure setting is among the isolation channel around raceway groove, under the premise of not influencing device off-state current, is greatly changed using illumination
The conducting electric current of kind device.
The embodiment of the present invention also discloses a kind of integrated circuit, includes the field effect of the photon enhancing described in above-described embodiment
Answer transistor.By the promotion for the field-effect transistor ON state performance that photon enhances, the performance of integrated circuit can be effectively improved.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
Centainly refer to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any
One or more embodiments or example in can be combined in any suitable manner.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art are not departing from the principle of the present invention and objective
In the case of can make changes, modifications, alterations, and variations to the above described embodiments within the scope of the invention.
Claims (12)
1. a kind of field-effect transistor of photon enhancing, which is characterized in that including：
Semiconductor layer；
Source region and drain region, the source region is arranged among the semiconductor layer or the semiconductor layer, the drain region setting
Among the semiconductor layer or the semiconductor layer；
It is formed in the grid structure of the semiconductor layer；
It is formed in the isolation channel of the periphery in the source region and the drain region；
The light emitting structure being formed among at least partly described isolation channel, the light emitting structure excite described for generating photon
Electron-hole pair in semiconductor layer；
The separation layer being formed between the isolation channel and the light emitting structure.
2. the field-effect transistor of photon as described in claim 1 enhancing, which is characterized in that the isolation channel includes：
It is formed in the heavily doped layer of the isolation groove groove wall；
The metal contact layer being formed on the heavily doped layer.
3. the field-effect transistor of photon enhancing as described in claim 1, which is characterized in that the semiconductor layer includes having
The semi-conducting material of direct band gap structure.
4. the field-effect transistor of photon enhancing as claimed in claim 3, which is characterized in that the semi-conducting material includes nitrogen
Compound semi-conducting material, arsenide semiconductor material, oxide semiconductor material or antimonide semi-conducting material.
5. the field-effect transistor of photon enhancing as described in claim 1, which is characterized in that the light emitting structure is luminous two
Pole pipe structure.
6. the field-effect transistor of photon enhancing as claimed in claim 5, which is characterized in that the light emitting diode construction packet
Luminescent layer is included, the luminescent layer is Quantum Well or multi-quantum pit structure.
7. the field-effect transistor of photon as claimed in claim 6 enhancing, which is characterized in that the emitting layer material with it is described
The material of semiconductor layer belongs to a series of.
8. the field-effect transistor of photon enhancing as claimed in claim 6, which is characterized in that the energy gap of the luminescent layer
Not less than the energy gap of the semiconductor layer.
9. the field-effect transistor of photon enhancing as described in claim 1, which is characterized in that further include：
Synchronization structure, for controlling, the field-effect transistor is synchronous with the light emitting structure to be opened.
10. the field-effect transistor of photon enhancing as described in claim 1, which is characterized in that the field-effect transistor packet
Include MOSFET, MESFET, MISFET and JFET.
11. the field-effect transistor of photon enhancing as described in claim 1, which is characterized in that the field-effect transistor tool
There are planar structure, double-gate structure, FinFET structure or gate-all-around structure.
12. a kind of integrated circuit, which is characterized in that include the field effect of the photon enhancing as described in any one of claim 1-11
Answer transistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611129636.1A CN108615761A (en) | 2016-12-09 | 2016-12-09 | The field-effect transistor and integrated circuit of photon enhancing |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611129636.1A CN108615761A (en) | 2016-12-09 | 2016-12-09 | The field-effect transistor and integrated circuit of photon enhancing |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1973360A (en) * | 2004-07-28 | 2007-05-30 | 三垦电气株式会社 | Nitride semiconductor device |
| US20070155025A1 (en) * | 2006-01-04 | 2007-07-05 | Anping Zhang | Nanowire structures and devices for use in large-area electronics and methods of making the same |
| WO2016074642A1 (en) * | 2014-11-14 | 2016-05-19 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrared photon source or photonic-ohmic drain to faciliate de-trapping electrons trapped in deep traps of transistors |
-
2016
- 2016-12-09 CN CN201611129636.1A patent/CN108615761A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1973360A (en) * | 2004-07-28 | 2007-05-30 | 三垦电气株式会社 | Nitride semiconductor device |
| US20070155025A1 (en) * | 2006-01-04 | 2007-07-05 | Anping Zhang | Nanowire structures and devices for use in large-area electronics and methods of making the same |
| WO2016074642A1 (en) * | 2014-11-14 | 2016-05-19 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrared photon source or photonic-ohmic drain to faciliate de-trapping electrons trapped in deep traps of transistors |
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