CN108615799B - Optically modulated semiconductor field effect transistor and integrated circuit - Google Patents
Optically modulated semiconductor field effect transistor and integrated circuit Download PDFInfo
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- CN108615799B CN108615799B CN201611130449.5A CN201611130449A CN108615799B CN 108615799 B CN108615799 B CN 108615799B CN 201611130449 A CN201611130449 A CN 201611130449A CN 108615799 B CN108615799 B CN 108615799B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The invention discloses an optical modulated semiconductor field effect transistor and an integrated circuit, wherein the optical modulated semiconductor field effect transistor comprises: a semiconductor layer; a source region and a drain region, the source region disposed in or on the semiconductor layer, the drain region disposed in or on the semiconductor layer; a gate structure formed over the semiconductor layer; a light emitting structure formed over the semiconductor layer, wherein the light emitting structure at least partially covers the source and/or drain regions, the light emitting structure for generating light for exciting electron and hole pairs in the semiconductor layer. According to the light modulated semiconductor field effect transistor and the integrated circuit, the light emitting structure is arranged on the semiconductor layer and partially covers the source or the drain, so that the light emitting structure is closer to the channel region, electron-hole pairs can be effectively excited in the channel region, the carrier concentration of the channel region is improved, and the conduction current of the device is greatly improved by utilizing light irradiation.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to an optical modulation semiconductor field effect transistor and an integrated circuit.
Background
The gallium nitride (GaN) wide-bandgap direct material has the advantages of high hardness, high thermal conductivity, high electron mobility, stable chemical properties, small dielectric constant, high temperature resistance and the like, so that GaN has wide application and great prospect in power electronic devices such as light emitting diodes, high frequency, high temperature, radiation resistance, high voltage and the like.
To date, heterojunction High Electron Mobility Transistors (HEMTs) based on GaN materials have been widely used and studied, but HEMTs of the normally-open type do not meet the application requirements for low power consumption. Therefore, research into Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) of normally-off GaN materials is necessary and increasingly focused.
For GaN-MOSFETs, Si ions (n-channel) and Mg ions (p-channel) are used for the source-drain implantation. However, for GaN materials, high temperature is required for the activation of implanted ions, and particularly, for Mg ions of a p-type channel, the activation rate is not high, so that the on-state current of the GaN-MOSFET is limited.
Disclosure of Invention
The present invention aims to solve at least one of the above technical problems to at least some extent or to at least provide a useful commercial choice. Therefore, an object of the present invention is to provide a semiconductor field effect transistor having a simple structure and high on-current light modulation.
An optically modulated semiconductor field effect transistor according to an embodiment of the present invention includes: a semiconductor layer; a source region and a drain region, the source region disposed in or on the semiconductor layer, the drain region disposed in or on the semiconductor layer; a gate structure formed over the semiconductor layer; a light emitting structure formed over the semiconductor layer, wherein the light emitting structure at least partially covers the source and/or drain regions, the light emitting structure for generating light for exciting electron and hole pairs in the semiconductor layer.
In one embodiment of the present invention, the source region includes: a first heavily doped layer; a first metal contact layer formed over the first heavily doped layer; the light emitting structure includes: a first light emitting layer formed over the first heavily doped layer; a first doped layer formed over the first light emitting layer, the first heavily doped layer and the first doped layer having opposite conductivity types; a first electrode disposed over the light emitting structure first doped layer.
In one embodiment of the present invention, the light emitting structure further includes: and a second doped layer formed between the first heavily doped layer and the light emitting layer, the second doped layer having the same conductivity type as the first heavily doped layer.
In one embodiment of the present invention, the drain region includes: a second heavily doped layer; a second metal contact layer formed over the second heavily doped layer; the light emitting structure includes: a second light emitting layer formed over the second heavily doped layer; a third doped layer formed over the second light emitting layer, the third doped layer and the second heavily doped layer having opposite conductivity types; and the second electrode is arranged on the third doping layer of the light-emitting structure.
In one embodiment of the present invention, the light emitting structure further includes: and a fourth doped layer formed between the second heavily doped layer and the light emitting layer, wherein the fourth doped layer and the second heavily doped layer have the same conductivity type.
In one embodiment of the invention, the semiconductor layer comprises a semiconductor material having a direct bandgap structure.
In one embodiment of the present invention, the material of the substrate includes a nitride semiconductor material, an arsenide semiconductor material, an oxide semiconductor material, or an antimonide semiconductor material.
In one embodiment of the present invention, the light emitting layer is a light emitting diode.
In one embodiment of the present invention, the light emitting diode structure includes a light emitting layer, which is a quantum well or multiple quantum well structure.
In one embodiment of the invention, the material of the light emitting layer is of the same family as the material of the substrate.
In one embodiment of the present invention, a band gap of the light emitting layer is not smaller than a band gap of the semiconductor layer.
In one embodiment of the present invention, further comprising: and the synchronous structure is used for controlling the semiconductor field effect transistor and the light-emitting structure to be synchronously started.
In one embodiment of the invention, the field effect transistor includes a MOSFET, a MESFET, a MISFET, and a JFET.
In one embodiment of the present invention, the field effect transistor has a planar structure, a double gate structure, a FinFET structure, or a gate all around structure.
From the above, the optically modulated semiconductor field effect transistor according to the embodiment of the present invention has at least the following advantages:
compared with the traditional independent GaN-MOSFET, the light-modulated semiconductor field effect transistor provided by the invention has the advantages that the light-emitting structure is arranged on the substrate and partially covers the source or the drain, so that the light-emitting structure is very close to the channel region, electron-hole pairs can be effectively excited in the channel region, the carrier concentration of the channel region is improved, and the on-state current of the device is greatly improved by utilizing illumination.
Another object of the present invention is to provide an integrated circuit.
An integrated circuit according to an embodiment of the invention comprises the optically modulated field effect transistor described in the above embodiments.
From the above, the integrated circuit according to the embodiment of the present invention has at least the following advantages:
compared with the traditional independent GaN-MOSFET, the integrated circuit provided by the invention has the advantages that the light-emitting structure is arranged on the substrate, and the source or the drain is partially covered, so that the light-emitting structure is closer to the channel region, electron-hole pairs can be effectively excited in the channel region, the carrier concentration of the channel region is increased, and the conduction current of the device is greatly improved by utilizing illumination.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of the structure of an optically modulated semiconductor field effect transistor of one embodiment of the present invention;
fig. 2 is a schematic structural view of a semiconductor field effect transistor in which a light emitting structure is disposed over a source region according to an embodiment of the present invention;
fig. 3 is a schematic structural view of a semiconductor field effect transistor in which a light emitting structure is disposed over a source region according to another embodiment of the present invention;
fig. 4 is a schematic structural view of a semiconductor field effect transistor in which a light emitting structure is disposed over a drain region in one embodiment of the present invention;
fig. 5 is a schematic structural view of a semiconductor field effect transistor in which a light emitting structure is disposed over a drain region according to another embodiment of the present invention;
FIG. 6 is a schematic diagram of a semiconductor field effect transistor with a light emitting structure sharing a voltage with a gate in accordance with an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a light emitting diode structure according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a structure of an optically modulated semiconductor field effect transistor including a synchronization structure in accordance with one embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In one aspect, the present invention provides an optically modulated semiconductor field effect transistor, as shown in fig. 1, including: a semiconductor layer 100; the source region 200 and the drain region 300, the source region 200 and the drain region 300 may be disposed in the semiconductor layer 100 as shown in fig. 1, and may also be disposed on the semiconductor layer 100 by using a lifting structure, on one hand, the lifted source and drain may be formed by epitaxy, so as to obtain heavier doping and lower resistivity, reduce the source-drain series resistance and the device on-resistance, and improve the on-state performance of the device; on the other hand, the distribution of doping elements in the source electrode and the drain electrode can be effectively controlled through the raised source electrode and the raised drain electrode which are formed through epitaxy, and the threshold voltage of the modulation device is utilized; a gate structure 400 formed over the semiconductor layer 100; a light emitting structure 500 is formed over the half substrate 100. Wherein the light emitting structure 500 at least partially covers the source region 200 and/or the drain region 300, the light emitting structure 500 being used to generate photons to excite electron-hole pairs in the semiconductor layer 100.
In one embodiment of the present invention, for an n-channel MOSFET, as shown in fig. 2, the source region 200 includes a first heavily doped layer 210 having a conductivity type of n-type, and a first metal contact layer 220 formed on the first heavily doped layer 210. The light emitting structure 500 includes a first light emitting layer 510 formed over the first heavily doped layer 210; the first doping layer 520 formed on the light emitting layer 510 has a p-type conductivity, that is, the conductivity of the first doping layer 520 is opposite to that of the first heavily doped layer 210, and the first doping layer 520 may be a heavily doped layer, so that the resistance is reduced by heavy doping, and the light emitting efficiency is improved; a first electrode formed over the first doped layer 520. The light emitting structure 500 and the source region 200 share the first heavily doped layer 210, which can reduce the complexity of the device structure and reduce the manufacturing cost. When the device is turned on, the gate voltage is positive, the light emitting structure 500 generates photons, the photons excite electron and hole pairs in the semiconductor layer 100, electrons in the photons flow to the channel region, and the effective carrier concentration of the channel region of the device is increased, so that the on-state current of the device is increased, and the performance of the device is enhanced. The semiconductor layer 100 may be a semiconductor material formed on an insulator, may be a compound semiconductor material epitaxial on Si, such as GaN, or the like, and may be a self-supporting compound semiconductor material, such as a GaN self-supporting wafer substrate. It is to be noted that the semiconductor layer 100 in fig. 2 is only a schematic structure, and may include a single material layer or multiple material layers; in the figure, the channel region under the gate structure 400 can be a single-layer structure, and can also be a multi-layer material structure with two-dimensional electron gas or two-dimensional hole gas; the semiconductor layer can also contain p-type or n-type trap, the active region of the device can be positioned in the trap to reduce the leakage; these structures are within the scope of the present invention and are not limited by the present examples. The gate structure 400 may comprise only gate metal (in this case, a metal-semiconductor field effect transistor (MESFET) structure), or gate metal and gate dielectric (in this case, a metal-oxide-semiconductor field effect transistor (MOSFET) or metal-insulator-semiconductor field effect transistor (MISFET) structure), and may further comprise a gate formed of a p-n junction (in this case, a Junction Field Effect Transistor (JFET) structure). The light emitting structure 500 partially covers the source region 200 and/or the drain region 300. In another embodiment of the present invention, as shown in fig. 3, the operation principle is identical to that of the n-channel MOSFET in the above-described embodiment, except that the light emitting structure 500 does not share the first heavily doped layer 210 with the source region 200, but a second doped layer 530 is disposed between the first heavily doped layer 210 and the light emitting layer 510, the second doped layer 530 having the same conductivity type as the first heavily doped layer 210, i.e., n-type conductivity. It should be noted that the present embodiment is exemplified by n-channel MOSFETs, and these structures can be applied to n-channel MISFETs, MESFETs, and JFETs, and p-channel MOSFETs, MISFETs, MESFETs, and JFETs by adjusting accordingly.
In another embodiment of the present invention, for a p-channel MOSFET, as shown in fig. 4, the drain region 300 includes a second heavily doped layer 310, which is p-type in conductivity type, and a second metal contact layer 320 formed over the second heavily doped layer 310. The light emitting structure 500 includes a second light emitting layer 510 formed on the second heavily doped layer 310; a third doping layer 520 formed on the light emitting layer 510, wherein the conductivity type of the third doping layer 520 is n-type, that is, the conductivity type of the third doping layer is opposite to that of the second heavily doping layer 310, and the first doping layer 520 may be a heavily doping layer, so that the resistance is reduced by heavy doping, and the light emitting efficiency is improved; a second electrode formed over the first doped layer 520. The light emitting structure 500 and the drain region 200 share the second heavily doped layer 320, so that the complexity of the device structure can be reduced, and the manufacturing cost can be reduced. When the device is turned on, the gate voltage is positive, the light emitting structure 500 generates photons, the photons excite electron and hole pairs in the semiconductor layer 100, electrons in the photons flow to the channel region, and the effective carrier concentration of the channel region of the device is increased, so that the on-state current of the device is increased, and the performance of the device is enhanced. For some compound semiconductor materials, such as GaN, ZnO and the like, because the injected ion activation of a p-channel MOSFET is more difficult than that of an n-channel MOSFET, the effective carrier concentration in the channel is low under the conventional condition, and the effect of promoting the effective carrier concentration is very obvious after the electron-hole pairs are excited by photons, so that the enhancement effect of the structure of the invention on the channel current of the p-channel MOSFET formed by the compound semiconductor materials is more obvious. It is to be noted that the semiconductor layer 100 in fig. 4 is only a schematic structure, and may include a single material layer or multiple material layers; in the figure, the channel region under the gate structure 400 can be a single-layer structure, and can also be a multi-layer material structure with two-dimensional electron gas or two-dimensional hole gas; the semiconductor layer can also contain p-type or n-type trap, the active region of the device can be positioned in the trap to reduce the leakage; these structures are within the scope of the present invention and are not limited by the present examples. The gate structure 400 may comprise only gate metal (in this case, a metal-semiconductor field effect transistor (MESFET) structure), or gate metal and gate dielectric (in this case, a metal-oxide-semiconductor field effect transistor (MOSFET) or metal-insulator-semiconductor field effect transistor (MISFET) structure), and may further comprise a gate formed of a p-n junction (in this case, a Junction Field Effect Transistor (JFET) structure). The light emitting structure 500 partially covers the source region 200 and/or the drain region 300. In another embodiment of the present invention, as shown in fig. 5, the operation principle is identical to that of the p-channel MOSFET in the above-described embodiment except that the light emitting structure 500 does not share the second heavily doped layer 310 with the drain region 300, but a fourth doped layer 530 is disposed between the second heavily doped layer 310 and the light emitting layer 510, the second doped layer 530 having the same conductivity type as the second heavily doped layer 310, i.e., p-type conductivity. It should be noted that the present embodiment is exemplified by p-channel MOSFETs, and these structures can be applied to p-channel MISFETs, MESFETs, and JFETs, and n-channel MOSFETs, MISFETs, MESFETs, and JFETs by adjusting accordingly.
In another embodiment of the present invention, the light emitting structure 500 may also be disposed on both the source region 200 and the drain region 300, in a similar manner as the light emitting structure 500 is disposed only on the source region 200 or the drain region 300 as described above. When the light emitting structure 500 is disposed on the source region 200 and the drain region 300, the power supply circuit is complicated compared to when the light emitting structure 500 is disposed on only the source region 200 or the drain region 300, and since the source region 200 and the drain region 300 have different potentials and the light emitting structure 500 thereon operates simultaneously, the two light emitting structures 500 need to supply different voltages, so that it is preferable to dispose the light emitting structure 500 only on the source region 200 or the drain region 300.
For the sake of simplicity, n-channel MOSFETs are exemplified in the following examples, and these structures can be used in n-channel MISFETs, MESFETs, and JFETs, and p-channel MOSFETs, MISFETs, MESFETs, and JFETs.
As shown in fig. 6, in one embodiment of the present invention, the light emitting structure 500 shares the same gate voltage as the field effect transistor (the light emitting structure 500 may be disposed over the source region 200 and/or the drain region 300 as in any of fig. 2-5). When the device is turned on, the light emitting structure 500 and the field effect transistor are turned on and off synchronously, so that the device and the circuit structure can be simplified, the complexity of the process can be reduced, and the cost can be reduced on the premise of enhancing the channel current of the light modulated field effect transistor.
In one embodiment of the present invention, the semiconductor layer 100 includes a semiconductor material having a direct bandgap structure. The direct band gap material can rapidly respond to and generate an electron-hole pair under the excitation of photons, has very high internal quantum efficiency, is favorable for enhancing the light modulation effect, and improves the device performance.
In one embodiment of the present invention, the material of the semiconductor layer 100 includes a nitride semiconductor material, an arsenide semiconductor material, an oxide semiconductor material, or an antimonide semiconductor material. The nitride semiconductor material comprises GaN, AlGaN, InGaN, AlN and InN. Arsenide semiconductor materials include GaAs, AlGaAs, InGaAs, InAs. The oxide semiconductor material comprises Ga2O3ZnO and InGaZnO. Antimonide semiconductor materials include GaSb, AlGaSb, InGaSb, InSb. These materials have a direct band gap energy band structure, and can rapidly respond to generate electron-hole pairs under the excitation of photons.
In one embodiment of the present invention, the light emitting structure 500 is a light emitting diode structure. Wherein the led structure may be arranged as shown in fig. 1. The light emitting diode structure may also be a structure including a quantum well or multiple quantum well structure as a light emitting layer as shown in fig. 7. One electrode of the field effect transistor may be led out directly from the substrate 100 or from the back surface of the substrate, and the other electrode may be led out through the first doped layer.
In one embodiment of the present invention, the material of the light emitting layer is in the same family as the material of the semiconductor layer 100, i.e., the material of the light emitting layer 520 is a nitride, arsenide, oxide or phosphide corresponding to the material of the semiconductor layer 100. The light emitting layer 520 and the semiconductor layer 100 made of the same series of materials can simplify the manufacturing process of the light emitting structure, and meanwhile, the forbidden bandwidths of the light emitting layer and the semiconductor layer 100 are adjusted, so that photons emitted by the light emitting structure 500 can be effectively absorbed by the semiconductor layer 100, and the channel conduction current of the field effect transistor is effectively enhanced.
In one embodiment of the present invention, the band gap of the light emitting layer 520 is not less than the band gap of the semiconductor layer 100. When the band gap of the light emitting layer 520 is not less than the band gap of the semiconductor layer 100, the generated photons have sufficient energy to excite electron-hole pairs in the semiconductor layer 100, and at this time, the internal quantum efficiency is high, the number of effective carriers generated in the semiconductor layer is large, and the channel conduction current is large. Of course, even if the band gap of the light emitting layer 520 is smaller than that of the semiconductor layer, the generated photons can excite electron-hole pairs in the semiconductor layer, but the internal quantum efficiency is low; on the contrary, if the forbidden band width of the light emitting layer 520 is much larger than that of the semiconductor layer, although the photons have enough energy to excite the electron-hole pairs in the semiconductor layer, the surplus energy is converted into heat, which causes heat generation and energy waste of the device. Therefore, the band gap of the light-emitting layer is optimally aligned with the band gap of the semiconductor layer.
In one embodiment of the present invention, a synchronization structure for controlling the synchronous turn-on of the field effect transistor and the light emitting structure 500 is further included. As shown in fig. 8, in the present embodiment, a resistor is connected in series between the light emitting structure 500 (the light emitting structure 500 may be disposed on the source region 200 and/or the drain region 300 in any manner as shown in fig. 2-5) and the field effect transistor, and the gate voltage is modulated to ensure that the light emitting structure and the field effect transistor can be turned on and off synchronously. It should be noted that the synchronous structure is not limited to a resistor connected in series between the light emitting structure 500 and the field effect transistor, as long as the light emitting structure and the field effect transistor can be turned on synchronously; similarly, the resistor is not limited to be connected in series between the power source and the light emitting structure, and may also be connected in series between the power source and the gate of the field effect transistor, and the resistor is connected in series to modulate the voltage between the field effect transistor and the light emitting structure, so that the light emitting structure and the field effect transistor both operate at the appropriate voltage.
Compared with the traditional semiconductor field effect transistor, the light-modulated semiconductor field effect transistor provided by the invention has the advantages that the light-emitting structure is arranged on the substrate and partially covers the source and/or the drain, so that the light-emitting structure is very close to the channel region, electron-hole pairs can be effectively excited in the channel region, the carrier concentration of the channel region is improved, and the on-state current of the device is greatly improved by utilizing illumination.
The embodiment of the invention also discloses an integrated circuit which comprises the semiconductor field effect transistor. The performance of the integrated circuit can be effectively improved by improving the on-state performance of the light modulated field effect transistor.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention.
Claims (15)
1. An optically modulated semiconductor field effect transistor comprising:
a semiconductor layer;
a source region and a drain region, the source region disposed in or on the semiconductor layer, the drain region disposed in or on the semiconductor layer;
a gate structure formed over the semiconductor layer;
a light emitting structure formed over the semiconductor layer, wherein the light emitting structure at least partially covers the source and/or drain regions, the light emitting structure for generating light for exciting electron and hole pairs in the semiconductor layer;
the source region and the drain region are arranged on the semiconductor layer by adopting a lifting structure.
2. The optically modulated semiconductor field effect transistor of claim 1, wherein the source region comprises:
a first heavily doped layer;
a first metal contact layer formed over the first heavily doped layer;
the light emitting structure includes:
a first light emitting layer formed over the first heavily doped layer;
a first doping layer formed over the light emitting layer, the first heavily doped layer and the first doping layer having opposite conductivity types;
a first electrode disposed over the light emitting structure first doped layer.
3. The optically modulated semiconductor field effect transistor of claim 2, wherein the light emitting structure further comprises:
and a second doped layer formed between the first heavily doped layer and the light emitting layer, the second doped layer having the same conductivity type as the first heavily doped layer.
4. The optically modulated semiconductor field effect transistor of claim 1, wherein the drain region comprises:
a second heavily doped layer;
a second metal contact layer formed over the heavily doped layer;
the light emitting structure includes:
a second light emitting layer formed over the second heavily doped layer;
a third doped layer formed over the second light emitting layer, the third doped layer and the second heavily doped layer having opposite conductivity types;
and the second electrode is arranged on the third doping layer of the light-emitting structure.
5. The optically modulating semiconductor field effect transistor of claim 4, wherein the light emitting structure further comprises:
and a fourth doped layer formed between the second heavily doped layer and the light emitting layer, wherein the fourth doped layer and the second heavily doped layer have the same conductivity type.
6. The optically modulated semiconductor field effect transistor of claim 1, wherein the semiconductor layer comprises a semiconductor material having a direct bandgap structure.
7. The optically modulating semiconductor field effect transistor according to claim 6, wherein the material of the semiconductor layer comprises a nitride semiconductor material, an arsenide semiconductor material, an oxide semiconductor material, or an antimonide semiconductor material.
8. An optically modulated semiconductor field effect transistor according to any of claims 2 to 5, wherein the light emitting layer is a light emitting diode.
9. The optically modulated semiconductor field effect transistor of claim 8, the light emitting diode structure comprising a light emitting layer, the light emitting layer being a quantum well or multiple quantum well structure.
10. An optically modulating semiconductor field effect transistor as claimed in any of claims 2 to 5, characterized in that the material of the light-emitting layer and the material of the semiconductor layer belong to the same family.
11. The optically modulated semiconductor field effect transistor according to any one of claims 2 to 5, wherein a band gap of the light emitting layer is not smaller than a band gap of the semiconductor layer.
12. The optically modulated semiconductor field effect transistor of claim 1, further comprising:
and the synchronous structure is used for controlling the semiconductor field effect transistor and the light-emitting structure to be synchronously started.
13. The optically modulating semiconductor field effect transistor of claim 1, wherein the field effect transistor comprises a MOSFET, a MESFET, a MISFET, and a JFET.
14. The optically modulating semiconductor field effect transistor of claim 1, wherein the field effect transistor has a planar structure, a double gate structure, a FinFET structure, or a gate-all-around structure.
15. An integrated circuit comprising an optically modulating semiconductor field effect transistor as claimed in any of claims 1 to 14.
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| CN201611130449.5A CN108615799B (en) | 2016-12-09 | 2016-12-09 | Optically modulated semiconductor field effect transistor and integrated circuit |
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| CN201611130449.5A CN108615799B (en) | 2016-12-09 | 2016-12-09 | Optically modulated semiconductor field effect transistor and integrated circuit |
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| CN108615799A CN108615799A (en) | 2018-10-02 |
| CN108615799B true CN108615799B (en) | 2020-07-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101388404A (en) * | 2007-09-13 | 2009-03-18 | 乐金显示有限公司 | Organic electroluminescence device and method for manufacturing the same |
| CN102456705A (en) * | 2010-10-25 | 2012-05-16 | 三星移动显示器株式会社 | Organic light-emitting display device and method of manufacturing the same |
| CN102544057A (en) * | 2010-12-14 | 2012-07-04 | 三星移动显示器株式会社 | Organic light-emitting display apparatus and method of manufacturing the same |
| CN104218061A (en) * | 2013-05-30 | 2014-12-17 | 三星显示有限公司 | Organic light-emitting display apparatus and method of manufacturing the same |
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| WO2016074642A1 (en) * | 2014-11-14 | 2016-05-19 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrared photon source or photonic-ohmic drain to faciliate de-trapping electrons trapped in deep traps of transistors |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388404A (en) * | 2007-09-13 | 2009-03-18 | 乐金显示有限公司 | Organic electroluminescence device and method for manufacturing the same |
| CN102456705A (en) * | 2010-10-25 | 2012-05-16 | 三星移动显示器株式会社 | Organic light-emitting display device and method of manufacturing the same |
| CN102544057A (en) * | 2010-12-14 | 2012-07-04 | 三星移动显示器株式会社 | Organic light-emitting display apparatus and method of manufacturing the same |
| CN104218061A (en) * | 2013-05-30 | 2014-12-17 | 三星显示有限公司 | Organic light-emitting display apparatus and method of manufacturing the same |
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