CN101388404A - Organic electroluminescence device and method for manufacturing the same - Google Patents
Organic electroluminescence device and method for manufacturing the same Download PDFInfo
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- CN101388404A CN101388404A CNA2008101496032A CN200810149603A CN101388404A CN 101388404 A CN101388404 A CN 101388404A CN A2008101496032 A CNA2008101496032 A CN A2008101496032A CN 200810149603 A CN200810149603 A CN 200810149603A CN 101388404 A CN101388404 A CN 101388404A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Abstract
An organic electroluminescence device and a method for manufacturing the same are disclosed. The organic electroluminescence device includes a transparent substrate, a semiconductor layer including a source region, a channel region and a drain region, a gate insulating film having first contact holes on the source and drain regions and formed on the substrate including the semiconductor layer, a gate electrode formed on the gate insulating film above the channel region, an interlayer insulating film having second contact holes on the source and drain regions and formed on an entire surface of the gate insulating film including the gate electrode, and a source electrode and a drain electrode formed on the interlayer insulating film to be electrically connected to the source and drain regions through the first and second contact holes, wherein at least one of the source electrode and the drain electrode is formed to cover the semiconductor layer.
Description
The cross reference of related application
The application requires the korean patent application No.10-2007-0093077 of submission on September 13rd, 2007, priority with the korean patent application No.10-2008-0080687 that submitted on August 19th, 2008, it is here all in conjunction with as a reference, just as here all listing.
Technical field
The present invention relates to a kind of organic electroluminescence device and manufacture method thereof, the method that relates in particular to the electrode structure of the thin-film transistor that is used as driving switch in a kind of organic electroluminescence device and make this organic electroluminescence device.
Background technology
At multimedia era, display device needs thinner bigger and can show approaching self-colored color.Conventional cathode ray tube (CRT) provides 40 inches or bigger large-screen aspect to be restricted.Organic electroluminescence device, liquid crystal display device (LCD), plasma display (PDP) and projection TV positive high speed developments such as (TVs) extensively are used in the field of high-definition picture.
In the aforementioned display device part, organic electroluminescence device is luminous in the following manner device; If electric charge is infused in the organic membrane that forms between negative electrode and the anode, then electron hole pair disappears (extinct), thereby luminous.Therefore, organic electroluminescence device can be formed on flexible transparent substrate, on plastics.In addition, compare with plasma display or inorganic electroluminescence device, organic electroluminescence device can be with low-voltage (approximately 10V is following) operation.In addition, because organic electroluminescence device has the advantage of low relatively power consumption and outstanding color sensation (color sensation), as display device of future generation, organic electroluminescence device has attracted people's attention.In addition, for the low voltage operating organic electroluminescence device, importantly keep organic membrane to have extremely thin and homogeneous thickness (about 100～200nm) and the stability of device.
Organic electroluminescence device is divided into the passive matrix organic electroluminescence device of operation under the switch control of the signal of telecommunication and the active electroluminescent device that uses thin-film transistor (TFT) to operate according to the driving method of sub-pixel.
Conventional active matrix type organic electroluminescent device is described below.
In the active matrix type organic electroluminescent device of routine, on transparency carrier, be formed with thin-film transistor.In this case, thin-film transistor comprises: have the active layer of source region, drain region and channel region, gate insulating film, grid, interlayer dielectric and source/drain.Source region and drain region contact with drain electrode with source electrode respectively with contact hole in the gate insulating film by being formed on interlayer dielectric.
In addition, has the planarization film that formation is formed by organic material on the substrate of thin-film transistor.In addition, on planarization film, form the anode that is electrically connected with drain electrode.In addition, on anode electrode, form organic luminous layer, and on organic luminous layer, form cathode electrode.In this case, organic luminous layer comprises hole transmission layer, redness, green and blue light-emitting layer and electron transfer layer.
In this case, hole transmission layer comprises hole injection layer and hole moving layer.Electron transfer layer comprises electron transfer layer and electron injecting layer.
Yet the organic electroluminescence device of above-mentioned routine has following problem.
In the active matrix type organic electroluminescent device of routine, in the deposition procedures of anode, luminescent layer and negative electrode, thin-film transistor is exposed to X ray or analog, causes the infringement to thin-film transistor thus.In addition, also has the problem that electrically contacts that reduces between the source.
Summary of the invention
Therefore, the present invention relates to a kind of organic electroluminescence device and manufacture method thereof, it has overcome the one or more problems that cause owing to the restriction of prior art and shortcoming basically.
An object of the present invention is to provide a kind of can be in the deposition procedures of anode, luminescent layer and negative electrode the protective film transistor avoid organic electroluminescence device and the manufacture method thereof that X ray or analog damaged and can improve the interfacial characteristics of source electrode and drain electrode in the active matrix type organic electroluminescent device.
In the following description part is listed other advantage of the present invention, purpose and feature, and according to following explanation, part is conspicuous for those skilled in the art, perhaps can figure out by putting into practice the present invention.Pass through the structure that particularly points out in the specification of writing and claim and the accompanying drawing can realize and obtain purpose of the present invention and other advantage.
For the advantage that realizes these and other and according to purpose of the present invention, as concrete expression and generalized description here, organic electroluminescence device comprises: transparency carrier; Semiconductor layer comprises source region, channel region and drain region; Gate insulating film has first contact hole on described source region and described drain region, and this gate insulating film is formed on the substrate that comprises described semiconductor layer; Be formed on the grid on the described gate insulating film of described channel region top; Interlayer dielectric has second contact hole on described source region and described drain region, and this interlayer dielectric is formed on the whole surface of the described gate insulating film that comprises described grid; And source electrode and drain electrode, be formed on the described interlayer dielectric, thereby be electrically connected with described source region and described drain region by described first contact hole and second contact hole, form one of at least the described semiconductor layer of covering in wherein said source electrode and the described drain electrode.
According to another object of the present invention, a kind of method that is used to make organic electroluminescence device comprises: form the semiconductor layer that comprises source region, channel region and drain region on substrate; Form gate insulating film comprising on the substrate of described semiconductor layer; On the described gate insulating film above the described channel region, form grid; On the whole surface of the gate insulating film that comprises described grid, form interlayer dielectric; In described gate insulating film and described interlayer dielectric, form first contact hole, thereby expose described source region and described drain region; And on described interlayer dielectric, form source electrode and the drain electrode that is electrically connected with described source region and described drain region by described first contact hole, form one of at least the described semiconductor layer of covering in wherein said source electrode and the described drain electrode.
Has following effect according to organic electroluminescence device of the present invention and manufacture method thereof.
In other words, in this active matrix type organic electroluminescent device, because the active layer of thin-film transistor is covered by source electrode, grid and drain electrode, so the active layer that can prevent thin-film transistor is compromised owing to the X ray in the deposition procedures of anode, organic luminous layer and negative electrode or analog.
In addition, have three-decker,, increased thus and electrically contact so can improve the interfacial characteristics of source electrode and drain electrode because source electrode and drain electrode form.
Should be appreciated that the generality description of front of the present invention and following detailed all are exemplary with indicative, are intended to provide the present invention described in claim further to explain.
Description of drawings
Illustrate embodiment of the present invention and be used from explanation principle of the present invention to the accompanying drawing that the invention provides a further understanding and a composition specification part with specification one.In the accompanying drawings:
Fig. 1 illustrates the cross-sectional view of expression according to the organic electroluminescence device of one embodiment of the present invention;
Fig. 2 illustrates the source electrode of Fig. 1 and the cross-sectional view of drain electrode;
Fig. 3 illustrates the cross-sectional view of the organic electroluminescence device of another execution mode according to the present invention; And
Fig. 4 A illustrates the method that is used to make according to the organic electroluminescence device of one embodiment of the present invention to 4E.
Embodiment
Describe in detail now with reference to the preferred embodiments of the invention, illustrate embodiment in the accompanying drawing.As far as possible, in whole accompanying drawing, use identical Reference numeral to represent same or analogous parts.
Below, describe in detail with reference to the accompanying drawings according to organic electroluminescence device of the present invention and manufacture method thereof.
Amplified the size of thickness in the accompanying drawings, clearly to represent several layers and zone.The thickness proportion of each shown in the figure layer is not equal to actual thickness proportion.Simultaneously, when other parts " on " when forming or being provided with, be to be understood that this part can be formed directly on described other parts by direct contact, perhaps can be provided with another part betwixt such as the such part of layer, film, zone and plate.
Fig. 1 illustrates the cross-sectional view according to the organic electroluminescence device of one embodiment of the present invention.Fig. 2 illustrates the cross-sectional view of source electrode and drain electrode.Fig. 3 illustrates the cross-sectional view of the organic electroluminescence device of another execution mode according to the present invention.Referring to figs. 1 through 3 organic electroluminescence devices of describing according to embodiment of the present invention.
As shown in Fig. 1 to 3, in organic electroluminescence device, on transparency carrier 100, be formed with thin-film transistor 110 according to embodiment of the present invention.
In this case, transparency carrier 100 can be formed by glass, quartz, sapphire or analog.In addition,, between transparency carrier 100 and thin-film transistor 110, be formed with dielectric film, advance in the thin-film transistor to prevent the various dopants penetration in the transparency carrier although do not illustrate among the figure.
The structure of thin-film transistor will be explained in detail.In other words, on transparency carrier 100, form semiconductor layer with source region 111, drain region 112 and channel region 113 with island.Comprising having source region 111, form gate insulating film 120 on the whole surface of substrate of the semiconductor layer of drain region 112 and channel region 113.On the gate insulating film above the channel region 113 120, form grid 114.On the whole surface of the substrate that comprises grid 114, form interlayer dielectric 130.In gate insulating film 120 and interlayer dielectric 130, form contact hole, with source of exposure zone 111 and drain region 112.On interlayer dielectric 130, form source electrode 115 and drain electrode 116, to be electrically connected with source region 111 and drain region 112 respectively by contact hole.
In this case, grid 114, source electrode 115 and at least one electrode in 116 of draining have three-decker as shown in Figure 2.In other words, this three-decker has the stepped construction of surfactant layer 115a, conductive layer 115b and passivation layer 115c.
In this case, surfactant layer 115a is formed and is had the thickness of 30～100nm by titanium (Ti), molybdenum (Mo) or analog.
In this case, passivation layer 115c protective transistor avoids because the infringement that X ray that produces when forming anode, luminescent layer and negative electrode subsequently or analog cause.Therefore, it is desirable to stop fully X ray, but in fact, passivation layer 115c uses above-mentioned material to form the thickness that has in above-mentioned scope.
In this case, when guaranteeing conductance, for volume and weight, conductive layer 115b forms the thickness with 200～500nm.In addition, surfactant layer 115a and passivation layer 115c can prevent that all conductive layer 115b is subjected to the infringement that causes owing to X ray in the deposition procedures of organic electroluminescence device etc.In addition, for the interface binding intensity of source electrode, surfactant 115a also can be formed by Mo except Ti.
Mo layer with 200nm thickness has 0.22% X ray transmitance, and the Mo layer with 400nm thickness has 0.0005% X ray transmitance.If surfactant layer 115a has the thickness of 30～100nm as mentioned above, then surfactant layer 115a just has 0.1～0.5% X ray transmitance.Yet, when forming surfactant layer 115a or passivation layer 115c,, there is a problem although the X ray shield effectiveness has improved than heavy back, promptly the volume and weight of device becomes big.Therefore, surfactant layer 115a and passivation layer 115c form the thickness that has in above-mentioned scope.
In addition, have higher X ray shield effectiveness such as plumbous (Pb) such material, but have lower interface binding intensity.Therefore, surfactant layer 115a is formed by molybdenum (Mo) or analog, to have above-mentioned X ray shield effectiveness.Surfactant layer 115a and passivation layer 115c can be formed by any other material that can shield X ray and can improve interface binding intensity.In addition, preferably, for X ray shield effectiveness and volume, the thickness that surfactant layer 115a that is formed by above-mentioned material and passivation layer 115c have 30～100nm.In addition, have the source electrode 115 of said structure or drain and 116 have 0.001～0.1% X ray transmitance, when X ray shield effectiveness and protective transistor are provided, reduced weight and volume thus.If only,, aspect transistorized interface binding intensity, can have problems though can obtain satisfied X ray shield effectiveness than a layer in heavy back formation passivation layer and the surfactant layer.
As shown in fig. 1, have the source electrode 115 of above-mentioned three-decker and at least one electrode in the drain electrode 116 and form the semiconductor layer that has source region 111, drain region 112 and channel region 113 in the cover film transistor.
In addition, as another example, as shown in Figure 3, have grid 114, the source electrode 115 of above-mentioned three-decker and drain and 116 form the semiconductor layer that has source region 111, drain region 112 and channel region 113 in the cover film transistor.
In addition, on the whole surface of the substrate that comprises thin-film transistor 110, be formed with planarization film 140, be used for the planarization pixel region.In this case, planarization film 140 can be by forming such as acrylic acid organic compound, polyimides, benzocyclobutene (BCB) or the such organic insulating material of PFCB.In addition, planarization film 140 can be by forming such as the such inorganic insulating material of silicon nitride.
In addition, in planarization film 140, be formed with contact hole, thereby expose the specific part of drain electrode 116.Then, form on the planarization film in pixel region 140 by contact hole and drain electrode 116 anode electrodes that are electrically connected 150.In this case, anode electrode 150 is formed with transmitted light by nesa coating, for example tin indium oxide (ITO) or indium zinc oxide (IZO).
On the planarization film between the pixel region 140, be formed with pixel isolation film 155.Pixel isolation film 155 can be by forming such as silicon nitride (SiNx) or the such inorganic insulating material of silica (SiO2).
Order forms organic luminous layer and cathode electrode 190 on pixel isolation film 155 and anode electrode 150.
Form organic luminous layer by sequential cascade hole injection layer 160, hole transmission layer 165, luminescent layer 170, electron transfer layer 180 and electron injecting layer 185.In addition, the cathode electrode 190 of organic electroluminescence device is layered on the organic luminous layer.
In this case, electron transfer layer 180 is arranged between luminescent layer 170 and the cathode electrode 190.Therefore, the most of electronics anode electrode 150 that injects luminescent layer 170 from cathode electrode 190 moves, thus and hole-recombination.In addition, hole transmission layer 165 is arranged between anode electrode 150 and the luminescent layer 170.Therefore since with the interface of hole transmission layer 165, the electronics that injects luminescent layer 170 exists only in luminescent layer 170, and does not have anode electrode 150 to move, and has improved combined efficiency thus.
Describe in detail with reference to the accompanying drawings and be used to make the method that has the organic electroluminescence device of above-mentioned structure according to of the present invention.
Fig. 4 A illustrates the method that is used to make according to the organic electroluminescence device of one embodiment of the present invention to 4E.
As shown in Fig. 4 A, the transparency carrier 100 that preparation is formed by glass, quartz, sapphire or analog.On transparency carrier 100, have approximately by low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition or similar approach formation
The amorphous silicon film of thickness.In addition, be polysilicon film by laser anneal method or similar approach with the amorphous silicon film crystallization.Certainly, replace amorphous silicon film, directly deposit spathic silicon film.
Then, by photo-mask process for example with the polysilicon film composition, thereby form the active layer 113a of thin-film transistor in the unit picture element.Then, deposition gate insulating film 120 on the whole surface of the substrate that comprises active layer 113a.
As shown in Fig. 4 B, on the gate insulating film above the active layer 113a 120, form grid 114.That is, deposit on gate insulating film 120 by sputtering method and have approximately
The calorize neodymium (AlNd) of thickness.Then, by photo-mask process with calorize neodymium (AlNd) composition, thereby form grid 114.
Then, use grid 114 foreign ion to be implanted among the active layer 113a as mask.Activate the foreign ion of implanting, thereby form the source region 111 and the drain region 112 of thin-film transistor.In this case, because foreign ion do not implant among the active layer 113a below the grid 114, so formation channel region 113 naturally.
In addition, on the whole surface of the substrate that comprises grid 114, form by silicon oxide film or the film formed interlayer dielectric 130 of silicon nitride.
As shown in Fig. 4 C, optionally remove gate insulating film 120 and interlayer dielectric 130, thereby expose source region 111 and drain region 112, form contact hole thus.
In addition, on interlayer dielectric 130, deposit layer of metal layer (for example three layers) at least, and remove this metal level, thereby form source electrode 115 and the drain electrode 116 that is electrically connected with source region 111 and drain region 112 by photo-mask process.
Detailed description is used to form the operation of source electrode 115 and drain electrode 116.
In other words, with thickness titanium deposition (Ti), molybdenum (Mo) or the analog of 30～100nm, thereby form surfactant layer 115a.Then, on surfactant layer 115a, be selected from the material of chromium (Cr), copper (Cu), gold (Au), nickel (Ni), silver (Ag), tantalum (Ta), aluminium (Al) and calorize neodymium (AlNd), thereby form conductive layer 115b with the thickness deposition of 200～500nm.Then, on conductive layer 115b with thickness titanium deposition (Ti), tungsten (W) or the analog of 30～100nm, thereby form passivation layer 115c.
In this case, surfactant layer 115a has 0.1～0.5% X ray transmissivity.Passivation layer 115c has 0.2～1.0% X ray transmissivity.
In addition, optionally remove surfactant layer 115a, conductive layer 115b and passivation layer 115c, thereby form source electrode 115 and drain electrode 116.Surfactant layer 115a has increased the interface binding intensity of source electrode, thereby the stability of device is provided.Source electrode 115 and drain electrode 116 form has 0.001～0.1% X ray transmissivity.
In this case, form one of at least the active layer that has source region 111, drain region 112 and channel region 113 in the cover film transistor in source electrode 115 and the drain electrode 116.
In addition, as another example, as shown in Figure 3, grid 114, source electrode 115 and drain and 116 form the active layer that has source region 111, drain region 112 and channel region 113 in the cover film transistor.
In addition, grid 114 can have and the three-decker of source electrode 115 with drain electrode 116 same way as.
As shown in Fig. 4 D, on the whole surface of the interlayer dielectric 130 that comprises thin-film transistor 110, form planarization film 140.In this case, planarization film 140 is set to be used for the planarization of anode and by with approximately
The organic or inorganic insulating material of thickness deposition form.
By photo-mask process etching planarization film 140, thereby form the contact hole that exposes source electrode 115 or drain 116 (being drain electrode 116 in the accompanying drawings).
Deposition of transparent conductive film on the planarization film 140 that comprises contact hole, for example ITO or IZO, and by photo-mask process with its composition, in pixel region, form by the contact hole and 116 anode electrodes that are electrically connected 150 that drain thus.
In addition, on the whole surface of final structure with approximately
The inorganic insulating membrane that forms by silicon nitride or silica of thickness deposition.Then,, thereby only keep the periphery of pixel region, form pixel isolation film 155 thus the inorganic insulating membrane composition.
As shown in Fig. 4 E, form organic luminous layer by sequential cascade hole injection layer 160, hole transmission layer 165, luminescent layer 170, electron transfer layer 180 and electron injecting layer 185.In addition, on the whole surface of final structure, be formed with the negative electrode 190 of organic electroluminescence devices with specific thicknesses.
In this case, form hole injection layer 160 by thickness deposition CuPc (CuPC) with 10～30nm.In addition, form hole transmission layer 165 by thickness deposition 4,4 '-two [N-1-naphthyl-N-phenyl-amino] biphenyl (NPB) with 30～60nm.In addition, according to red, green and blue pixel, luminescent layer 170 is formed by luminous organic material, adds dopant (if desired) simultaneously.
In this case, at least one operation that is used to form anode, organic luminous layer and negative electrode is used electron beam (X ray).
The reason of using electron beam to form anode, organic luminous layer and negative electrode is by carry out the characteristics of luminescence that above-mentioned operation can improve organic luminous layer in identical chamber.In other words, when the deposition organic luminous layer and by sputtering method in sputter equipment during deposition cathode, organic luminous layer is exposed to air, thereby has reduced the characteristics of luminescence or made deposition procedures become complicated.
As mentioned above, although in the operation that is used to form anode, organic luminous layer and negative electrode, use electron beam, by source electrode 115 and the transistorized active layer of drain electrode 116 cover films.Thereby, can prevent that the active layer of thin-film transistor is compromised.
In organic electroluminescence device according to the present invention and manufacture method thereof, can improve the interfacial characteristics of source electrode and drain electrode and can prevent particularly because the infringement that X ray causes to the active layer of thin-film transistor.Thereby, can send out performance that improves organic electroluminescence device and the life-span that prolongs organic electroluminescence device.
Under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations in the present invention, this is conspicuous to those skilled in the art.Thereby, the invention is intended to cover the modifications and variations of the present invention that fall in claims and the equivalent scope thereof.
Claims (17)
1. organic electroluminescence device comprises:
Transparency carrier;
Semiconductor layer comprises source region, channel region and drain region;
Gate insulating film has first contact hole on described source region and described drain region, and this gate insulating film is formed on the substrate that comprises described semiconductor layer;
Grid is formed on the described gate insulating film of described channel region top;
Interlayer dielectric has second contact hole on described source region and described drain region, and this interlayer dielectric is formed on the whole surface of the described gate insulating film that comprises described grid; And
Source electrode and drain electrode are formed on the described interlayer dielectric, thereby are electrically connected with described source region and described drain region by described first contact hole and second contact hole,
Wherein, form one of at least in described source electrode and the described drain electrode and cover described semiconductor layer.
2. organic electroluminescence device according to claim 1 is characterized in that, one of at least has 0.001～0.1% X ray transmissivity and form in described source electrode and the described drain electrode to have three-decker.
3. organic electroluminescence device according to claim 2 is characterized in that, described three-decker comprises: the surfactant layer that is formed by titanium Ti or molybdenum Mo; The conductive layer that is formed on the described surfactant layer and forms by the material that is selected from chromium Cr, copper Cu, golden Au, nickel, silver-colored Ag, tantalum Ta, aluminium Al and calorize neodymium AlNd; And the passivation layer that is formed on the described conductive layer and forms by titanium Ti or tungsten W.
4. organic electroluminescence device according to claim 3 is characterized in that described conductive layer forms the thickness with 200～500nm.
5. organic electroluminescence device according to claim 3 is characterized in that, described passivation layer has the thickness of 30～100nm and 0.2～1.0% X ray transmissivity.
6. organic electroluminescence device according to claim 3 is characterized in that, described surfactant layer has the thickness of 30～100nm and 0.1～0.5% X ray transmissivity.
7. organic electroluminescence device according to claim 1 is characterized in that, described semiconductor layer is covered by grid, source electrode and drain electrode.
8. organic electroluminescence device according to claim 1 is characterized in that, also comprises:
Planarization film has the 3rd contact hole in described drain electrode, and this planarization film is formed on the whole surface of the substrate with described source electrode and drain electrode;
Anode electrode is formed in the pixel region on the described planarization film, thereby is electrically connected with described drain electrode by described the 3rd contact hole;
Organic luminous layer is formed on the described anode electrode; And
Cathode electrode is formed on the described organic luminous layer.
9. method of making organic electroluminescence device comprises:
On substrate, form the semiconductor layer that comprises source region, channel region and drain region;
Form gate insulating film comprising on the substrate of described semiconductor layer;
On the described gate insulating film above the described channel region, form grid;
On the whole surface of the gate insulating film that comprises described grid, form interlayer dielectric;
In described gate insulating film and described interlayer dielectric, form first contact hole, thereby expose described source region and described drain region; And
On described interlayer dielectric, form source electrode and the drain electrode that is electrically connected with described source region and described drain region by described first contact hole,
Wherein, forming one of at least in described source electrode and the described drain electrode covers described semiconductor layer.
10. method according to claim 9 is characterized in that, one of at least having 0.001～0.1% X ray transmissivity and forming in described source electrode and the described drain electrode has three-decker.
11. method according to claim 10 is characterized in that, the step that forms described source electrode and described drain electrode comprises:
Use titanium Ti or molybdenum Mo on described interlayer dielectric, to form surfactant layer;
The material that use is selected from chromium Cr, copper Cu, golden Au, nickel, silver-colored Ag, tantalum Ta, aluminium Al and calorize neodymium (AlNd) forms conductive layer on described surfactant layer; And
Use titanium Ti or tungsten W on described conductive layer, to form passivation layer.
12. method according to claim 11 is characterized in that, described conductive layer forms the thickness with 200～500nm.
13. method according to claim 11 is characterized in that, described passivation layer has the thickness of 30～100nm and 0.2～1.0% X ray transmissivity.
14. method according to claim 11 is characterized in that, described surfactant layer has the thickness of 30～100nm and 0.1～0.5% X ray transmissivity.
15. method according to claim 9 is characterized in that, described semiconductor layer is covered by grid, source electrode and drain electrode.
16. method according to claim 9 is characterized in that, also comprises:
On the whole surface of the substrate that comprises described source electrode and described drain electrode, form planarization film;
In described planarization film, form second contact hole that exposes described drain electrode;
Form the anode electrode that is electrically connected with described drain electrode by described second contact hole in the pixel region on described planarization film;
On described anode electrode, form organic luminous layer; And
On described organic luminous layer, form cathode electrode.
17. method according to claim 16 is characterized in that, being formed by the electron beam deposition method one of at least in described anode electrode, described organic luminous layer and the described cathode electrode.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20070093077 | 2007-09-13 | ||
| KR10-2007-0093077 | 2007-09-13 | ||
| KR1020070093077 | 2007-09-13 | ||
| KR1020080080687 | 2008-08-19 | ||
| KR10-2008-0080687 | 2008-08-19 | ||
| KR1020080080687A KR101296657B1 (en) | 2007-09-13 | 2008-08-19 | Organic electroluminescence device and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101388404A true CN101388404A (en) | 2009-03-18 |
| CN101388404B CN101388404B (en) | 2010-09-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101496032A Active CN101388404B (en) | 2007-09-13 | 2008-09-11 | Organic electroluminescence device and method for manufacturing the same |
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| Country | Link |
|---|---|
| KR (1) | KR101296657B1 (en) |
| CN (1) | CN101388404B (en) |
| TW (1) | TWI455302B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711233A (en) * | 2016-12-09 | 2017-05-24 | 清华大学 | Light-modulated diode and power circuit |
| CN108615799A (en) * | 2016-12-09 | 2018-10-02 | 清华大学 | The semiconductor field effect transistor and integrated circuit of light modulation |
| CN110858629A (en) * | 2018-08-23 | 2020-03-03 | 上海新微技术研发中心有限公司 | Organic light emitting diode structure and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101802406B1 (en) | 2009-11-27 | 2017-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the same |
| WO2013115052A1 (en) * | 2012-01-31 | 2013-08-08 | シャープ株式会社 | Semiconductor device and method for producing same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4071652B2 (en) * | 2002-03-04 | 2008-04-02 | 株式会社 日立ディスプレイズ | Organic EL light emitting display |
| JP2003317971A (en) * | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | Light emitting device and its producing method |
| JP2007188936A (en) * | 2006-01-11 | 2007-07-26 | Epson Imaging Devices Corp | Display device |
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- 2008-08-19 KR KR1020080080687A patent/KR101296657B1/en active IP Right Grant
- 2008-09-11 CN CN2008101496032A patent/CN101388404B/en active Active
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711233A (en) * | 2016-12-09 | 2017-05-24 | 清华大学 | Light-modulated diode and power circuit |
| CN108615799A (en) * | 2016-12-09 | 2018-10-02 | 清华大学 | The semiconductor field effect transistor and integrated circuit of light modulation |
| CN108615799B (en) * | 2016-12-09 | 2020-07-28 | 清华大学 | Optically modulated semiconductor field effect transistor and integrated circuit |
| CN110858629A (en) * | 2018-08-23 | 2020-03-03 | 上海新微技术研发中心有限公司 | Organic light emitting diode structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101296657B1 (en) | 2013-08-14 |
| TWI455302B (en) | 2014-10-01 |
| KR20090028409A (en) | 2009-03-18 |
| TW200913257A (en) | 2009-03-16 |
| CN101388404B (en) | 2010-09-08 |
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