KR101296657B1 - Organic electroluminescence device and method for manufacturing the same - Google Patents

Abstract

The present invention relates to an organic light emitting display device and a method of manufacturing the same, which can protect a thin film transistor from X-ray and the like in the deposition process of the anode, the light emitting layer and the cathode, and improve the interfacial characteristics of the source and drain electrodes. According to the organic light emitting device, the transparent substrate; A semiconductor layer having a source region, a channel region and a drain region; A gate insulating film having a first contact hole on the source region and the drain region and formed on the substrate including the semiconductor layer; A gate electrode formed on the gate insulating layer above the channel region; An interlayer insulating layer having a second contact hole on the source region and the drain region, and formed on an entire surface of the gate insulating layer including the gate electrode; And a source electrode and a drain electrode formed on the interlayer insulating layer to be electrically connected to the source region and the drain region through the first and second contact holes, wherein at least one of the source electrode and the drain electrode is the semiconductor. It is formed to cover the layer.

Source electrode, drain electrode, 3-layer structure

Description

Organic electroluminescence device and method for manufacturing the same

The present invention relates to an organic light emitting device, and more particularly, to an electrode structure and a manufacturing method of a thin film transistor of the organic light emitting device that serves as a drive switch.

With the advent of the multimedia age, the emergence of a display device capable of expressing more detailed, larger, and more natural color is required. However, the current CRT (Cathode Ray Tube) has a limit to constitute a large screen of 40 inches or more, such as organic electroluminescence device (Liquid Crystal Display Devivce), LCD (Plasma Display Panel) and projection TV Television is rapidly developing to expand its use in the field of high-definition video.

Among them, the organic electroluminescent device is a device that emits light when electrons and holes are paired and extinguished when electric charge is injected into the organic film formed between the cathode and the anode. Therefore, the organic light emitting display device can form a device on a flexible transparent substrate such as plastic. In addition, it can be driven at a low voltage (about 10 V or less) as compared with a plasma display panel or an inorganic electroluminescent device. In addition, the organic light emitting diode has a relatively low power consumption and excellent color, attracting attention as a next-generation display. In addition, in order to drive at a low voltage, the total thickness of the organic film is very thin and uniform, such as 100 to 200 nanometers, and it is important to maintain the stability of the device.

The organic light emitting diode is an active matrix which is driven by using a passive matrix organic light emitting diode and a thin film transistor (TFT), which are driven by a switch control of an electric signal according to a method of driving a subpixel. It is divided into (Active matrix) type organic light emitting display device.

A conventional active matrix organic electroluminescent device will now be described.

In a conventional active matrix organic light emitting display device, a thin film transistor, an interlayer insulating film, and a gate insulating film are formed on a transparent substrate. Here, the thin film transistor includes a source region, a drain region, and a channel region. The thin film transistor contacts the source electrode and the drain electrode through contact holes formed in the interlayer insulating film and the gate insulating film.

The planarization film is formed of an organic material on the gate insulating film and the metal electrode. The anode electrode is formed on the planarization film so as to be electrically connected to the metal electrode. In addition, an insulating film is formed on a region including the thin film transistor portion and a part of the end of the anode electrode. An organic light emitting layer is formed on the insulating film, and a cathode electrode is formed on the organic light emitting layer. At this time, the organic light emitting layer is composed of a hole transporting layer and red, green and blue light emitting layers and an electron transporting layer.

Here, the hole transport layer is composed of a hole injection layer and a hole transport layer, the electron transport layer is composed of an electron transport layer and an electron injection layer.

However, the above-described conventional organic light emitting device has the following problems.

In a conventional active matrix organic light emitting diode, the thin film transistor may be exposed to X-ray or the like in the deposition process of the anode, the light emitting layer, and the cathode. Therefore, damage may occur to the thin film transistor. In addition, there is a problem that the electrical contact between the source and drain electrode layers is lowered.

The present invention is to solve such a conventional problem, in the active matrix type organic light emitting device, to protect the thin film transistor from the X-ray, etc. in the deposition process of the anode, the light emitting layer and the cathode, the interface characteristics of the source and drain electrodes An object of the present invention is to provide an organic light emitting display device and a method for manufacturing the same.

An organic light emitting display device according to the present invention for achieving the above object, a transparent substrate; A semiconductor layer having a source region, a channel region and a drain region; A gate insulating film having a first contact hole on the source region and the drain region and formed on the substrate including the semiconductor layer; A gate electrode formed on the gate insulating layer above the channel region; An interlayer insulating layer having a second contact hole on the source region and the drain region, and formed on an entire surface of the gate insulating layer including the gate electrode; And a source electrode and a drain electrode formed on the interlayer insulating layer to be electrically connected to the source region and the drain region through the first and second contact holes, wherein at least one of the source electrode and the drain electrode is the semiconductor. It is characterized by being formed to cover the layer.

In addition, a method of manufacturing an organic light emitting display device according to the present invention for achieving the above object comprises the steps of: forming a semiconductor layer having a source region, a channel region and a drain region on a substrate; Forming a gate insulating film on the substrate including the semiconductor layer; Forming a gate electrode on the gate insulating layer above the channel region; Forming an interlayer insulating film on an entire surface of the gate insulating film including the gate electrode; A first contact hole is formed in the gate insulating film and the interlayer insulating film to expose the source region and the drain region. A source electrode and a drain are formed on the interlayer insulating film so as to be electrically connected to the source and drain regions through the second contact hole. And forming at least one of the source electrode and the drain electrode to cover the semiconductor layer.

The organic light emitting display device and its manufacturing method according to the present invention have the following effects.

That is, in the active matrix organic light emitting diode, since the active layer of the thin film transistor is covered by the source electrode, the gate electrode, and the drain electrode, the active layer of the thin film transistor by X-ray or the like in the anode, organic light emitting layer, and cathode electrode deposition process. This damage can be prevented.

In addition, since the three-layer structure of the source electrode and the drain electrode is formed, the electrical contact can be increased by improving the interfacial characteristics of the source electrode and the drain electrode.

Hereinafter, an organic light emitting display device and a method of manufacturing the same according to the present invention having the above characteristics will be described in detail with reference to the accompanying drawings.

In the accompanying drawings, the thickness of layers, films, panels, regions, etc., may be exaggerated for clarity. On the other hand, when a portion such as a layer, a film, an area, a plate, or the like is formed or positioned on another portion, it is not only formed directly on another portion and directly contacted, And the like.

1 is a cross-sectional view of an embodiment of an organic light emitting display device according to the present invention, FIG. 2 is a cross-sectional view of the source and drain electrodes of FIG. 1, and FIG. 3 is a view of an organic light emitting display device according to another embodiment of the present invention. It is sectional drawing of an Example. An embodiment of the organic light emitting display device according to the present invention will be described with reference to FIGS. 1 to 3.

In the active matrix type organic light emitting display device according to the exemplary embodiment of the present invention, as shown in FIGS. 1 to 3, the thin film transistor 110 is formed on the transparent substrate 100.

Here, the transparent substrate 100 may be made of glass, quartz, sapphire, or the like. Although not shown in the drawing, an insulating film may be further formed between the transparent substrate 100 and the thin film transistor 110 to prevent various impurities in the transparent substrate from penetrating into the thin film transistor.

Hereinafter, the configuration of the thin film transistor 110 will be described in more detail. That is, the semiconductor layer divided into the source region 111, the drain region 112, and the channel region 113 is formed in an island shape on the transparent substrate 100. A gate insulating layer 120 is formed on an entire surface of the substrate including the semiconductor layer divided into the source region 111, the drain region 112, and the channel region 113, and the gate insulating layer above the channel region 113. A gate electrode 114 is formed over 120. An interlayer insulating layer 130 is formed on an entire surface of the substrate including the gate electrode 114, and contact holes are formed in the gate insulating layer 120 and the interlayer insulating layer 130 to expose the source region 111 and the drain region 112. The source electrode 115 and the drain electrode 116 are formed on the interlayer insulating layer 130 to be electrically connected to the source region 111 and the drain region 112 through the contact hole.

Here, at least one of the gate electrode 114, the source electrode 115, and the drain electrode 116 has a three-layer structure as shown in FIG. 2. That is, the three-layer structure has a structure in which the surface active layer 115a, the conductive layer 115b, and the protective layer 115c are stacked.

Here, the surface active layer 115a is made of Ti (titanium) or Mo (molybdenum) or the like and has a thickness of 30 to 100 nanometers.

The conductive layer 115b is formed of Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantarum), Al (aluminum), and AlNd (almininum). It consists of a material selected from the group consisting of and has a thickness of 200-500 nanometers.

The protective layer 115c is made of Ti (titanium) or W (tungsten), and has a thickness of 30 to 100 nanometers, and has an X-ray transmittance of 0.001 to 1.0%.

Here, the protective layer 115c serves to protect the transistor from damage from X-rays or the like generated when the anode electrode, the light emitting layer, and the cathode electrode are formed later. Therefore, it is ideal to completely block X-rays, but in reality, the protective layer 115c is formed of a material and a thickness having the aforementioned range.

Here, the thickness of the conductive layer 115b is 200-500 nanometers in consideration of securing electrical conductivity, volume, and weight. In addition, both the surface active layer 115a and the protective layer 115c may prevent the conductive layer 115b from being damaged from X-rays or the like in the deposition process of the organic light emitting diode. In addition, the surface active layer 115a may be formed of Mo in addition to Ti in consideration of the interface adhesion of the source electrode.

X-ray transmittance is 0.22% for Mo 200 nanometer thick and 0.0005% for Mo 400 nanometer thick. If the thickness of the surface active layer 115a is 30 to 100 nanometers as described above, the X-ray transmittance is 0.1 to 0.5%. However, the surface of the surface active layer 115a or the protective layer 115c is thickened. If formed, the X-ray shielding effect is great, but the volume and weight of the device is large, so in consideration of this, it is formed in the above-mentioned thickness.

In addition, since Pb (lead) and the like have a large X-ray shielding effect, but the interfacial adhesion is poor, when Mo is used in consideration of this, the surface active layer 115a having the above-described X-ray shielding effect may be formed. Can be. The surface active layer 115a and the conductive layer 115c may be replaced with other materials. However, the surface active layer 115a and the conductive layer 115c should be materials for blocking X-rays and improving interfacial adhesion. In addition, it is preferable that the surface active layer 115a and the protective layer 115c made of the above materials have a thickness of 30 to 100 nanometers in consideration of sufficient blocking, volume, and the like of X-rays. In addition, the X-ray transmittance of the entire source electrode 115 or the drain electrode 116 having the above-described structure is 0.001 to 0.1%, and the weight and volume of the X-ray shielding effect and the transistor are protected, Simplification can be achieved. If only one of the protective layer and the surface active layer is formed thick, the X-ray shielding effect may be sufficient, but there may be a problem in the interface adhesion with the transistor.

As described above, at least one of the source electrode 115 and the drain electrode 116 having a three-layer structure is, as shown in FIG. 1, the source region 111, the drain region 112, and the channel region ( 113 is formed to cover the semiconductor layer of the thin film transistor.

In another embodiment, as described above, the gate electrode 114, the source electrode 115, and the drain electrode 116 having a three-layer structure may include the source region 111 as illustrated in FIG. 3. And a semiconductor layer of the thin film transistor having a drain region 112 and a channel region 113.

A planarization layer 140 is formed on the entire surface of the substrate including the thin film transistor 110 to planarize the pixel area. Here, the planarization layer 140 may be made of an organic insulating material such as an acryl-based organic compound, polyimide, BCB (Benzo Cyclo Butene) or PFCB, and may be made of an inorganic insulating material such as silicon nitride. It may be.

In addition, a contact hole is formed in the planarization layer 140 to expose a predetermined portion of the drain electrode 116, and the planarization layer 140 is electrically connected to the drain electrode 116 through the contact hole. A pixel zero region anode electrode 150 is formed. Here, the anode electrode 150 is made of a transparent conductive film that transmits light such as indium-tin-oxide (ITO), indium-zinc-oxide (IZO), or the like. .

The pixel isolation layer 155 is formed on the planarization layer 140 between the pixel regions. The pixel isolation layer 155 may be made of an inorganic insulating material such as silicon nitride (Sin _x ) or silicon oxide (SiO ₂ ).

The organic emission layer and the cathode electrode 190 are sequentially formed on the pixel isolation layer 155 and the anode electrode 150.

The organic emission layer may include a hole injection layer 160, a hole transfer layer 165, an emission layer 170, an electron transfer layer 180, and an electron injection layer. layer 185 is sequentially stacked. The cathode electrode 190 of the organic light emitting diode is stacked on the organic light emitting layer.

Here, the electron transport layer 180 is provided between the light emitting layer 170 and the cathode electrode 190, so that most of the electrons injected from the cathode electrode 190 into the light emitting layer 170 are anode to recombine with holes. It is moved toward the electrode 150. In addition, a hole transporting layer 160 is provided between the anode electrode 150 and the light emitting layer 170, and electrons injected into the light emitting layer 170 are blocked at an interface with the hole transporting layer 160 and no longer the anode electrode 150. Recombination efficiency may be improved because the light emitting layer 170 does not move toward) and exists only in the light emitting layer 170.

Referring to the accompanying drawings, the manufacturing method of the organic light emitting device according to the present invention configured as described above will be described in more detail as follows.

4A to 4E are views illustrating one embodiment of a method of manufacturing an organic light emitting display device according to the present invention.

As shown in FIG. 4A, a transparent substrate 100 made of glass, quartz, sapphire, or the like is prepared. An amorphous silicon film is deposited on the transparent substrate 100 to a thickness of about 200 to 800 angstroms by low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition. Form. The amorphous silicon film is crystallized into polycrystalline silicon by a method such as laser annealing. Of course, instead of the amorphous silicon film, a polycrystalline silicon film may be deposited immediately.

Subsequently, the polycrystalline silicon is patterned by a method such as a photolithography process to form the active layer 113a of the thin film transistor in the unit pixel. The gate insulating layer 120 is deposited on the entire surface of the substrate including the active layer 113a.

As shown in FIG. 4B, a gate electrode 114 is formed on the gate insulating layer 120 above the active layer 113a. That is, aluminum-neodynium (AlNd) or the like is deposited on the gate insulating layer 120 to a thickness of about 1500 to 5000 angstroms by sputtering, and then the aluminum-neodynium (AlNd) is patterned by a photolithography process to form a gate. An electrode 114 is formed.

Using the gate electrode 114 as a mask, impurity ions are implanted into the active layer 113a, and the implanted impurity ions are activated to form the source region 111 and the drain region 112 of the thin film transistor. In this case, impurity ions are not implanted into the active layer 113a under the gate electrode 114 so that a channel region 113 is naturally formed.

An interlayer insulating layer 130 is formed on the entire surface of the substrate including the gate electrode 114 using a silicon oxide film or a silicon nitride film.

As shown in FIG. 4C, the gate insulating layer 120 and the interlayer insulating layer 130 are selectively removed so that the source region 111 and the drain region 112 are exposed to form contact holes.

In addition, at least one metal layer (eg, three layers) is deposited on the interlayer insulating layer 130, and the metal layer is removed by a photolithography process to be electrically connected to the source region 111 and the drain region 112. The source electrode 115 and the drain electrode 116 are formed.

Hereinafter, a process of forming the source electrode 115 and the drain electrode 116 will be described in detail.

That is, Ti (titanium) or Mo (molybdenum) or the like is deposited to a thickness of 30 to 100 nanometers to form an interface layer 115a, and Cr (chromium), Cu (copper), Au on the interface layer 115a. (Gold), Ni (nickel), Ag (silver), Ta (tantarum), Al (aluminum), and AlNd (almineri 윰) material selected from the group of 200 to 500 nanometers thick The conductive layer 115b is formed. Subsequently, Ti (titanium) or W (tungsten) or the like is deposited on the conductive layer 115b to a thickness of 30 to 100 nanometers to form a protective layer 115c.

Here, the surfactant layer 115a has an X-ray transmittance of 0.1 to 0.5%, and the protective layer 115c exhibits an X-ray transmittance of 0.2 to 1.0.

The source electrode 115 and the drain electrode 116 are selectively formed by selectively removing the surface active layer 115a, the conductive layer 115b, and the protective layer 115c. The surface active layer 115a may contribute to securing stability of the device by improving the interfacial adhesion between the source electrode and the like, and the source electrode 115 and the drain electrode 116 may be formed to have X-ray transmittances of 0.001 to 0.1%, respectively. do.

In this case, at least one of the source electrode 115 or the drain electrode 116 is formed to cover the active layer of the thin film transistor including the source region 111, the drain region 112, and the channel region 113. do.

In another embodiment, as described with reference to FIG. 3, the source region 111, the drain region 112, and the channel are formed by the gate electrode 114, the source electrode 115, and the drain electrode 116. It is formed to cover the active layer of the thin film transistor having a region 113.

The gate electrode 114 may also be formed in a three-layer structure like the source electrode 115 and the drain electrode 116.

As shown in FIG. 4D, the planarization layer 140 is formed on the entire surface of the interlayer insulating layer 130 including the thin film transistor 110. Here, the planarization layer 140 is for planarization of the anode electrode, and is formed by depositing an organic or inorganic insulating material to a thickness of about 1000 to 5000 angstroms.

The planarization layer 140 is etched by a photolithography process to form a contact hole exposing one of the source electrode 115 and the drain electrode 116 (in the drawing, the contact hole is formed in the drain electrode 116). Shown).

A transparent conductive film, such as ITO or IZO, is deposited on the planarization layer 140 including the contact hole, and patterned by a photolithography process so that the anode is electrically connected to the drain electrode 116 through the contact hole. An electrode 150 is formed.

An inorganic insulating film made of a silicon nitride film, a silicon oxide film, or the like is deposited on the entire upper surface of the resultant to have a thickness of about 1000 to 2000 angstroms, and is patterned to remain only at the periphery of the pixel region, thereby forming the pixel isolation film 155.

As shown in FIG. 4E, the hole injection layer 160, the hole transport layer 165, the emission layer 170, the electron transport layer 180, and the electron injection layer 185 are disposed on the entire surface of the substrate including the anode electrode 150. Laminating sequentially to form an organic light emitting layer. Subsequently, the cathode electrode 190 of the organic light emitting diode having a predetermined thickness is formed on the entire upper surface of the resultant product.

Here, the hole injection layer 160 is formed by depositing copper phthalocyanine (CuPC) to a thickness of 10 to 30 nanometers. And, the hole transport layer 165 is 4,4'-qltm [N- (1-naphthyl) -N-phenylamino] biphenyl (4,4'-bis [N- (1-naphthyl) -N-phenthylamino ] -biphenyl (NPB) is formed by depositing a thickness of 30 to 60 nanometers, and the light emitting layer 170 is formed of an organic light emitting material according to red, green, and blue pixels, and is formed by adding a dopant as necessary. do.

Here, at least one of the process of forming the anode electrode, the organic light emitting layer, and the cathode electrode is deposited using an electron beam (X-ray).

The reason for forming the anode electrode, the organic light emitting layer and the cathode electrode using the electron beam is to improve the light emission characteristics of the organic light emitting layer by performing the process in the same chamber. In other words, when the organic light emitting layer is deposited and the cathode electrode is deposited by the sputtering method by moving to a sputtering apparatus, the organic light emitting layer is exposed to the air, thereby deteriorating light emission characteristics or the deposition process.

As described above, since the active layer of the thin film transistor is covered by the source electrode 115 and the drain electrode 116 in the process of forming the anode electrode, the organic light emitting layer, and the cathode electrode, the thin film by X-ray Damage to the active layer of the transistor can be prevented.

The present invention is not limited to the above-described embodiments, and can be modified by those skilled in the art, as will be apparent from the appended claims, but such modifications are within the scope of the present invention.

The organic light emitting display device and the method of manufacturing the same according to the present invention can improve the interfacial characteristics of the source electrode and the drain electrode, and in particular, can prevent damage to the active layer of the thin film transistor by X-rays. It can contribute to improving the performance and extending the lifespan.

1 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

2 is a cross-sectional view of the source and drain electrodes of FIG.

3 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention.

4A to 4E are cross-sectional views of an organic light emitting display device according to the present invention.

<Explanation of symbols for the main parts of the drawings>

100: transparent substrate 110: thin film transistor

111: source region 112: drain region

113: channel region 113a: active layer

114: gate electrode 115: source electrode

115a: surfactant layer 115b: conductive layer

115c: protective layer 116: drain electrode

120 gate insulating film 130 interlayer insulating film

140 planarization film 150 anode electrode

155: pixel separation layer 160: hole injection layer

165: hole transport layer 170: light emitting layer

180: electron transport layer 185: electron transport layer

190: cathode electrode

Claims (17)

A transparent substrate; A semiconductor layer having a source region, a channel region and a drain region; A gate insulating film having a first contact hole on the source region and the drain region and formed on the substrate including the semiconductor layer; A gate electrode formed on the gate insulating layer above the channel region; An interlayer insulating layer having a second contact hole on the source region and the drain region, and formed on an entire surface of the gate insulating layer including the gate electrode; A source electrode and a drain electrode formed on the interlayer insulating layer to be electrically connected to a source region and a drain region through the first and second contact holes;  A planarization layer having a third contact hole on the drain electrode and formed on an entire surface of the substrate including the source electrode and the drain electrode; An anode formed on the pixel area on the planarization layer to be electrically connected to the drain electrode through the third contact hole; An organic emission layer formed on the anode electrode; A cathode electrode formed on the organic light emitting layer; And And a pixel separation layer formed on the planarization layer between the pixel regions, At least one of the source electrode and the drain electrode covers the semiconductor layer, at least one of the source electrode and the drain electrode has an X-ray transmittance of 0.001 to 0.1%, and is formed in a three-layer structure, The three-layer structure, A surface active layer made of Ti or Mo (molybdenum), Substances selected from the group consisting of Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantarum), Al (aluminum) and AlNd (almininum) A conductive layer formed on the surface active layer, An organic electroluminescent device comprising a protective layer formed on the conductive layer made of Ti (titanium) or W (tungsten). delete delete The method of claim 1, The conductive layer is an organic light emitting display device, characterized in that formed to a thickness of 200 ~ 500 nanometers. The method of claim 1, The protective layer has a thickness of 30 to 100 nanometers, the organic light emitting device, characterized in that the X-ray transmittance is 0.2 to 1.0%. The method of claim 1, The surfactant layer has a thickness of 30 to 100 nanometers, the organic light emitting device, characterized in that the X-ray transmittance is 0.1 to 0.5%. The method of claim 1, And the semiconductor layer is covered by a gate electrode, a source electrode and a drain electrode. delete Forming a semiconductor layer having a source region, a channel region, and a drain region on the substrate; Forming a gate insulating film on the substrate including the semiconductor layer; Forming a gate electrode on the gate insulating layer above the channel region; Forming an interlayer insulating film on an entire surface of the gate insulating film including the gate electrode; A first contact hole is formed in the gate insulating film and the interlayer insulating film to expose the source region and the drain region. A source electrode and a drain are formed on the interlayer insulating film so as to be electrically connected to the source and drain regions through the second contact hole. Forming an electrode; Forming a planarization film on an entire surface of the substrate including the source electrode and the drain electrode; Forming a second contact hole in the planarization layer to expose the drain electrode, and forming an anode electrode in the pixel region on the planarization layer to be electrically connected to the drain electrode through the second contact hole; Forming a pixel isolation layer on the planarization layer between the pixel regions; Forming an organic emission layer on the anode; And And forming a cathode on the organic light emitting layer, At least one of the source electrode and the drain electrode covers the semiconductor layer, at least one of the source electrode and the drain electrode has an X-ray transmittance of 0.001 to 0.1%, and is formed in a three-layer structure, The three-layer structure, A surface active layer made of Ti or Mo (molybdenum), Substances selected from the group consisting of Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantarum), Al (aluminum) and AlNd (almineralized) A conductive layer formed on the surface active layer, Method of manufacturing an organic light emitting display device comprising a protective layer formed on the conductive layer consisting of Ti (titanium) or W (tungsten). delete delete The method of claim 9, The conductive layer is a method of manufacturing an organic light emitting device, characterized in that formed to a thickness of 200 ~ 500 nanometers. The method of claim 9, The protective layer is a method of manufacturing an organic light emitting display device, characterized in that formed in a thickness of 30 to 100 nanometers so that the X-ray transmittance is 0.2 to 1.0%. The method of claim 9, The surface active layer is a method of manufacturing an organic light emitting display device, characterized in that formed in the thickness of 30 to 100 nanometers so that the X-ray transmittance is 0.1 to 0.5%. The method of claim 9, The semiconductor layer is a method of manufacturing an organic light emitting display device, characterized in that covered by a gate electrode, a source electrode and a drain electrode. delete The method of claim 9, At least one of the anode electrode, the organic light emitting layer, and the cathode electrode is formed by an electron beam deposition method.

Images