KR101429908B1 - Organic electroluminescence device - Google Patents

Abstract

The present invention relates to an organic electroluminescent device.

An organic electroluminescent device includes a light emitting layer between an anode electrode and a cathode electrode, and pairs of electrons and holes are emitted from the light emitting layer to emit light, the organic electroluminescent device comprising: a plurality of pixels for displaying a video signal; And a driving device connected to the pixels and supplying a driving signal, wherein the first wiring portion connected to the data electrode is formed at a distance from the second wiring portion connected to the source / drain electrode, The width of a plurality of wirings of one wiring portion is narrower than the width of a plurality of wirings of the second wiring portion.

Therefore, according to the present invention, in the pads connecting the light emitting region of the organic electroluminescent device and the tape carrier package (TCP), the width of the wiring connecting the TCP and the light emitting portion is adjusted to reduce the volume of the entire organic electroluminescent device It is possible to facilitate aligning of the wirings and the FPC with each other, and a short circuit due to static electricity can be prevented when the voltage difference between the Vdd stage and the Vss stage is relatively large.

Organic electroluminescent element, non-emitting region, dummy wiring

Description

[0001] The present invention relates to an organic electroluminescence device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly to a wiring line of a pad portion of an organic electroluminescent device.

With the advent of the multimedia age, the emergence of a display device capable of expressing more detailed, larger, and more natural color is required. However, the present CRT (Cathode Ray Tube) has a limitation in forming a large screen of 40 inches or more, and thus, an organic electroluminescence device, a liquid crystal display (LCD), a plasma display panel (PDP) Television) are rapidly developing in order to expand their use in the field of high-definition video.

An organic electroluminescent device is a device that injects electric charge into an organic film formed between a cathode and an anode and emits light while paired with electrons and then disappears. Thus, the organic electroluminescent device can form an element on a transparent substrate which can be made of plastic. In addition, it can be driven at a low voltage (about 10 V or less) as compared with a plasma display panel or an inorganic electroluminescent device. Further, the organic electroluminescent device is advantageous in that the power consumption is relatively small and the color is excellent, which is attracting attention as a next generation display. In order to operate at a low voltage, it is important that the total thickness of the organic layer is as thin as about 100 to 200 nm, uniform, and the stability of the device is maintained.

The organic electroluminescent device includes a passive matrix type organic electroluminescent device which is driven by a switch control of an electric signal according to a method of driving sub pixels, and an active matrix type organic electroluminescent device which is driven by using a thin film transistor (TFT) Active matrix) organic electroluminescent device.

A conventional active matrix organic electroluminescent device will now be described.

In a conventional active matrix type organic electroluminescent device, a thin film transistor, an interlayer insulating layer and a gate insulating layer are formed on a transparent substrate. Here, the thin film transistor includes a source electrode, a drain electrode, an active layer, and a gate electrode. The thin film transistor is in contact with the source electrode and the drain through the interlayer insulating layer and the contact hole formed in the gate insulating layer.

On the gate insulating layer and the metal electrode, the planarizing film is formed of an organic material. The anode electrode is formed on the planarization film so as to be electrically connected to the metal electrode. In addition, an insulating layer is formed on the region including the thin film transistor portion and the region including the end portion of the anode electrode. An organic light emitting layer is formed on the insulating layer, and a cathode electrode is formed on the organic light emitting layer. At this time, the organic light emitting layer is composed of a hole transporting layer and red, green and blue light emitting layers and an electron transporting layer.

Here, the hole transport layer is composed of a hole injection layer and a hole transport layer, and the electron transport layer is composed of an electron transport layer and an electron injection layer.

However, the conventional organic electroluminescent device described above has the following problems.

The light emitting region of the organic electroluminescent device is connected to a TCP (Tape Carrier Package) for driving the organic electroluminescent device through a pad portion or the like. As the number of pixels increases, the number of wires connecting the TCP to the light emitting portion in the pad portion increases, which increases the volume of the entire organic electroluminescent device.

If the alignment of the wiring lines and the FPC is not easy, or if the voltage difference between the Vdd stage and the Vss stage is large, a short circuit due to static electricity may occur.

It is an object of the present invention to reduce the volume of the entire organic electroluminescent device by controlling the width of the wiring connecting the TCP and the light emitting portion in the pad portion connecting the light emitting region of the organic electroluminescent device and the tape carrier package .

Another object of the present invention is to facilitate aligning of the wirings with the FPCB

Another object of the present invention is to prevent a short circuit due to static electricity when the relative voltage difference is large, such as Vdd and Vss.

According to an aspect of the present invention, there is provided an organic electroluminescent device including a light emitting layer between an anode electrode and a cathode electrode, wherein electrons and holes are paired with each other in the light emitting layer to emit light, A plurality of pixels; And a driving device connected to the pixels and supplying a driving signal, wherein the first wiring portion connected to the data electrode is formed to be spaced apart from the second wiring portion connected to the source / drain electrode An organic electroluminescent device is provided.

According to another embodiment of the present invention, there is provided a method of manufacturing a light emitting device, comprising: laminating an anode, a light emitting layer, and a cathode in a light emitting region on a substrate; Forming a first wiring portion connected to a data electrode in a non-emission region on the substrate; And forming a second wiring part connected to the source / drain electrode and having a different distance from the first wiring part, in the non-emission area.

The effects of the organic electroluminescent device and the manufacturing method thereof according to the present invention are as follows.

First, in the pad portion connecting the light emitting region of the organic electroluminescent device and the tape carrier package (TCP), the width of the wiring connecting the TCP and the light emitting portion can be controlled to reduce the volume of the entire organic electroluminescent device.

Second, it is easy to align the wirings and the FPCB in the adhesion of the organic electroluminescent device.

Other objects, features and advantages of the present invention will become apparent from the detailed description of the embodiments with reference to the accompanying drawings.

Hereinafter, preferred embodiments of the present invention in which the above objects can be specifically realized will be described with reference to the accompanying drawings.

In the accompanying drawings, the thickness is enlarged in order to clearly illustrate the various layers and regions, and the thickness ratio between the respective layers shown in the drawings does not represent the actual thickness ratio. On the other hand, when a portion such as a layer, a film, an area, a plate, or the like is formed or positioned on another portion, it is not only formed directly on another portion and directly contacted, And the like.

1 is a plan view of a pad portion of an organic electroluminescent device according to an embodiment of the present invention. An organic electroluminescent device according to an embodiment of the present invention will now be described with reference to FIG.

1, a first wiring part 110 and a second wiring part 120 are provided in a pad part. The first wiring part 110 and the second wiring part 120 are connected to the active area 140 and the drive IC 130 having a plurality of pixels. In this embodiment, the second wiring part 120 is provided on the left and right sides of the first wiring part 110. The first wiring part 110 is connected to a data electrode of the organic electroluminescence device to supply driving data. The second wiring part 120 is connected to the source / drain electrodes of the organic electroluminescent device. Here, the first wiring part 110 and the second wiring part 120 are composed of a plurality of wirings, as shown in the figure.

Here, each of the wirings constituting the first wiring portion 110 is different in width from each of the wirings constituting the second wiring portion 120. Here, 'different' is characterized by a difference in design, not an error in manufacturing technique. Specifically, the width of each of the wirings constituting the first wiring portion 110 is narrower than the width of each of the wirings constituting the second wiring portion 120. Here, the width of each of the wirings constituting the first wiring portion 110 is 120 to 180 micrometers, and the width of each of the wirings constituting the second wiring portion 120 is 160 to 240 micrometers.

If the width of each of the wirings is too narrow, there is a danger that the wiring is cut off when a large amount of current flows. If the width of each of the wirings is too wide, the capacity of the pad portion increases too. The reason why the widths of the wirings are different is that a voltage higher than that of the first wiring part 110 may be applied to the second wiring part 120. [ Therefore, in the case of a V _dd stage where a relatively large voltage is applied compared to a data signal or the like, the width of the wiring can be increased.

At least one of the first wiring part 110 and the second wiring part 120 may include at least one dummy wiring. Here, the dummy wiring is formed for a short due to static electricity when the relative voltage difference is large, such as an align for attaching to an FPC, and a Vdd stage and a Vss stage.

The wirings constituting the first wiring part 110 and the second wiring part 120 are spaced apart from each other by a predetermined distance. Here, the predetermined distance is a distance of 1 to 1.5 times the width of each of the wirings. That is, each of the wirings constituting the second wiring portion 120 is spaced more than each of the wirings constituting the first wiring portion 110. The above-described spacing distance is a value in consideration of the prevention of short circuit and the capacity of the pad portion.

The wirings constituting the first wiring part 110 may be formed of a material selected from the group consisting of Nd (neodymium), Ta (tantalum), Nb (niobium), Mo (molybdenum), W (tungsten) ), B (boron), Ni (nickel), and Al (aluminum).

The wirings constituting the second wiring part 120 may have a three-layer structure. Here, the three-layer structure means a structure in which a protective layer and an interfacial active layer are provided on both sides of a conductive layer for transmitting an electric signal. Here, the conductive layer may be made of Al (aluminum) or the like as the first wiring portion 110. The protective layer may be made of Ti (titanium) or tungsten (W), and the interface active layer may be made of titanium (Ti) or molybdenum (Mo). At this time, both the protective layer and the interfacial active layer can prevent the conductive layer from being damaged from X-rays or the like in the deposition process of the organic electroluminescent device. In addition, the interface active layer can increase the interfacial adhesion of the source electrode. The protective layer and the surfactant layer may be replaced by other materials, but it is natural that the material should be a material for blocking the X-ray and improving the interfacial adhesion.

An insulating film may be provided on the upper and lower portions of the first wiring part 110 and the second wiring part 120. Here, if the insulating film is formed under the first wiring part 110 and the second wiring part 120, deformation of the wiring parts can be prevented even in a high temperature or high humidity condition. An organic or inorganic insulating film may be formed on the first wiring part 110 and the second wiring part 120 to protect the wiring parts from moisture and the like.

Next, the configuration of the active area will be described with reference to FIG. In the case of the active matrix type top-emission type organic electroluminescent device, the active region is formed by forming a plurality of thin film transistors 210, an interlayer insulating layer 220 and a gate insulating layer 230 on the transparent substrate 100 . Here, the transparent substrate 100 may be made of glass, quartz, sapphire, or the like. An interlayer insulating layer 220 is formed between the transparent substrate 100 and the thin film transistor 210 to prevent various impurities in the substrate from penetrating into the silicon film.

The thin film transistor 210 includes a source region 211, a drain region 212, a channel region 213, a gate electrode 214, and first and second metal electrodes 215 and 216. The first and second metal electrodes 215 and 216 are in contact with the source region 211 and the drain region 212 of the thin film transistor 210 through the interlayer insulating layer 220 and the gate insulating layer 230, .

On the entire surface of the transparent substrate 100 including the thin film transistor 210, a planarization film 240 is formed for planarization of the pixel region. Here, the planarization layer 230 may be formed of an organic insulating material such as an acryl based organic compound, a polyimide, a BCB (Benzo Cyclo Butene), or a PFCB, or an inorganic insulating material such as silicon nitride have.

An anode electrode 250 connected to one of the first and second metal electrodes 215 and 216 is formed on the planarization layer 240 through the contact hole. Here, the anode electrode 250 is made of a transparent conductive film that transmits light such as ITO (Indium-Tin-Oxide) or IZO (Indium-Zinc-Oxide) An insulating film 258 is provided at a position corresponding to the position where the thin film transistor 210 is provided. Here, the insulating film 258 is formed to cover a part of the end of the anode electrode 250 as shown in FIG.

Here, the portion of the insulating film 258 covering one end of the anode electrode 250 is 3 to 10% of the width of the anode electrode 250. That is, even when the insulating film 258 covers the anode electrode 250, the opening ratio of the anode electrode 250 is set to 80 to 95%. The size of the specific anode electrode 250 and the overlapping width of the insulating film 258 may be different depending on the pixel size of the organic EL device. For example, assuming that the size of one anode electrode 250 is 100 micrometers, the insulating layer 258 covers the end of the anode electrode by 3 to 10 micrometers. The insulating film 260 may be formed of an inorganic insulating material such as a silicon nitride film (Sin _x ) or a silicon oxide film (SiO ₂ ).

If the width of the insulating film 258 covering the anode electrode 250 is larger than the above-mentioned numerical value, the aperture ratio of the organic electroluminescent device may be excessively reduced. Further, when the insulating film 258 covers the anode electrode at a width smaller than the above-described numerical value, there is a difficulty in the manufacturing process as described later.

An organic light emitting layer and a cathode electrode 290 are sequentially formed on the insulating layer 258 and the anode electrode 250. The organic emission layer includes a hole injection layer 260, a hole transport layer 165, an emission layer 270, an electron transfer layer 280, and an electron injection layer And 285 are stacked in this order. On the organic light emitting layer, an electrode for back light emission is stacked on the cathode electrode 290 of the organic electroluminescent device.

An electron transport layer 280 is provided between the emission layer 270 and the cathode 290 so that most of the electrons injected from the cathode 290 into the emission layer 270 are recombined with the anode 270. [ (250). A hole transport layer 280 is provided between the anode electrode 250 and the emission layer 270 so that the electrons injected into the emission layer 270 are blocked at the interface with the hole transport layer 280, 250) and exist only in the light emitting layer (270), so that the recombination efficiency can be improved.

Hereinafter, a method of manufacturing an organic electroluminescent device according to an embodiment of the present invention will be described.

First, the manufacturing process of the light emitting region will be described. A transparent substrate made of glass, quartz, sapphire or the like is prepared. Then, an interlayer insulating layer and a channel region of a predetermined thickness are formed on the transparent substrate as shown in the figure. Here, the channel region is formed by a low pressure chemical vapor deposition method or a plasma enhanced chemical vapor deposition method, and is formed to a thickness of about 200 to 800 angstroms (A) . Then, the channel region is crystallized into polycrystalline silicon by a method such as laser annealing.

Then, the polycrystalline silicon active layer is patterned by a method such as a photolithography process to form a channel region in the thin film transistor region in the unit pixel. An interlayer insulating layer may be formed to prevent various impurities in the transparent substrate from penetrating into the silicon film during crystallization of the amorphous silicon film to be described later. Impurity ions are implanted using the photomask used in the patterning process of the gate film to form source and drain regions of a thin film transistor to be described later on both side surfaces of the channel region.

Laser annealing or furnace annealing is then performed to activate the doped regions of the source and drain regions and to repair damage to the silicon layer.

Then, a silicon oxide is deposited on the interlayer insulating layer and the channel region to form a gate insulating layer. Here, the silicon oxide may be deposited by a plasma chemical vapor deposition method or the like, and the gate insulating layer may be deposited to a thickness of about 1000 to 2000 Angstroms. Then, a gate electrode is formed on the gate insulating layer. Here, the gate electrode may be formed by sputtering aluminum-neodinium (AlNd) or the like with a thickness of about 1500 to 5000 angstroms, and then patterning by photolithography and identification. Then, contact holes are formed to expose a part of the source and drain regions, and may be performed by a photo etching process or the like.

Then, molybdenum tungsten (MoW) or alumina-neodymium is deposited to a thickness of 3,000 to 6,000 Angstroms to form a conductive layer, and then the conductive layer is patterned by a photolithography process so as to be in contact with the source and drain regions Thereby forming a source electrode and a drain electrode. The source electrode and the drain electrode can be formed by sputtering or electron beam evaporation. Then, a conductive material such as Al (aluminum) is laminated to a thickness of 200 to 500 nanometers.

Then, a planarization film is formed on the keat insulation layer including the thin film transistor. Here, the planarizing film is for planarizing the anode electrode, and is formed by depositing an organic or inorganic insulating material to a thickness of about 1000 to 5000 angstroms. Then, the planarization film is etched by a photolithography process to form contact holes exposing one of the source and drain electrodes. Then, a transparent conductive film such as ITO or IZO is deposited on the planarization film and the contact hole, and then patterned by a photolithography process to form an anode electrode connected to the drain electrode through the contact hole. Here, a transparent conductive material such as ITO is used for the anode electrode.

On the entire upper surface of the resultant product, an insulating material such as a silicon nitride film or a silicon oxide film is deposited on the entire upper surface of the resultant to a thickness of about 1000 to 2000 Angstroms. Then, the insulating material is patterned to form an insulating film. The patterning process of the insulating material is performed by selective exposure and development. That is, as shown in the figure, a mask is placed on the insulating material, and the insulating material is selectively exposed and developed, leaving only the exposed portion such as ultraviolet rays.

Here, the mask for selective exposure should be provided so as to cover both ends of the anode electrode. If the anode electrode has a line width of 100 micrometers, the mask should be positioned so as to cover each end of the anode electrode by 3 to 10 micrometers. When the mask covers both ends of the anode electrode at a distance of 3 micrometers or less, the insulating film may be patterned so as not to cover the anode electrode due to an error in the exposure process.

The insulating film formed after the selective exposure process and the development process through the mask covers both ends of the anode electrode by 3 to 10% of the width of the anode electrode. That is, the aperture ratio of the anode electrode is 80 to 95%. The size of the anode electrode and the overlapping width of the insulating film will differ depending on the pixel size of the organic electroluminescent device. For example, assuming that the size of one anode electrode is 100 micrometers, the insulating film covers the end of the anode electrode by 3 to 10 micrometers.

Then, a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer are sequentially laminated on the region including the opening to form an organic light emitting layer. Next, a cathode electrode of an organic electroluminescent device having a predetermined thickness is formed on the entire upper surface of the resultant structure.

Here, the hole injection layer is formed by depositing copper phthalocyanine (CuPC) to a thickness of 10 to 30 nm. Then, the hole transport layer is formed of 4,4'-qltm [N- (1-naphthyl) -N-phenylamino] biphenyl (NPB) is deposited to a thickness of 30 to 60 nm. The light emitting layer is formed by using an organic light emitting material according to red, green, and blue pixels, and dopant is added as needed.

Next, the manufacturing process of the non-emission region will be described.

The first wiring portion and the second wiring portion are formed so as to be connected to the active region provided with the plurality of pixels and the drive IC. At this time, the second wiring portion may be formed as a pair on the left and right sides of the first wiring portion. Here, the first wiring portion is formed to be connected to the data electrode of the organic electroluminescent device. The second wiring portion is formed to be connected to the source / drain electrode of the organic electroluminescent device. In this case, each of the first wiring portion and the second wiring portion is composed of a plurality of wirings.

Each of the wirings constituting the first wiring portion is formed so that its width is different from the width of each of the wirings constituting the second wiring portion. Specifically, the width of each of the wirings constituting the first wiring portion is formed in accordance with the width of each of the wirings constituting the second wiring portion. Here, the width of each of the wirings constituting the first wiring portion is 120 to 180 micrometers, and the width of each of the wirings of the second wiring portion is 160 to 240 micrometers.

As described above, the reason why the widths of the wirings are different is that a voltage higher than that of the first wiring portion can be applied to the second wiring portion. Therefore, in the case of a V _dd stage or the like where a large voltage is applied, the width of the wiring is formed to be wide.

At least one of the first wiring portion and / or the second wiring portion is formed so as not to be connected to the electrode to form a dummy wiring. Here, the dummy wiring is formed for a short due to static electricity when the relative voltage difference is large, such as an align for attaching to an FPC, and a Vdd stage and a Vss stage.

Each of the wirings constituting the first wiring portion and the second wiring portion is spaced at a distance of 1 to 1.5 times the width of each of the wirings. Accordingly, each of the wirings constituting the second wiring portion is spaced more than each of the wirings constituting the first wiring portion.

The wirings constituting the first wiring portion may be formed of a material selected from the group consisting of Nd (neodymium), Ta (tantalum), Nb (niobium), Mo (molybdenum), W (tungsten), Ti Boron), Ni (nickel), and Al (aluminum).

In addition, the wirings constituting the second wiring portion can be formed in a three-layer structure, and the detailed structure is as described above.

An insulating film may be formed on the upper and lower portions of the first wiring portion and the second wiring portion. Here, if the insulating film is formed under the first wiring portion and the second wiring portion, deformation of the wiring portions can be prevented even in a state of high temperature or high humidity. In addition, an organic or inorganic insulating film is formed on the first wiring portion and the second wiring portion, so that the wiring portions can be protected from moisture and the like.

The method of manufacturing an organic electroluminescent device according to the present invention can prevent ultraviolet rays or the like from being blocked by the insulating film during the deposition process of the light emitting layer and the cathode electrode, thereby preventing deterioration of the performance of the thin film transistor.

The present invention is not limited to the above-described embodiments, and can be modified by those skilled in the art, as will be apparent from the appended claims, but such modifications are within the scope of the present invention.

The organic electroluminescent device and the method of manufacturing the same according to the present invention can reduce the volume of the entire organic electroluminescent device by controlling the width of the wirings in the pad portion and align the wirings with the FPCB. And shorting due to static electricity can be prevented when the relative voltage difference is large, such as the Vdd stage and the Vss stage.

1 is a plan view of a pad portion of an organic electroluminescent device according to an embodiment of the present invention;

2 is a view showing the structure of an active region of an organic electroluminescent device according to an embodiment of the present invention.

Description of the Related Art

100: transparent substrate 110: first wiring portion

120: second wiring part 130: drive IC

140: light emitting region 210: thin film transistor

211: source region 212: drain region

213: channel region 214: gate electrode

215: first metal electrode 216: second metal electrode

220: interlayer insulating layer 230: gate insulating layer

240: planarization film 250: anode electrode

253: Insulation material 256: Mask

258: Insulating film 260: Hole injection layer

265: hole transport layer 270: light emitting layer

280: electron transport layer 285: electron transport layer

290: cathode electrode

Claims (10)

An organic electroluminescent device comprising a light emitting layer between an anode electrode and a cathode electrode, wherein electrons and holes are paired with each other in the light emitting layer to emit light, A plurality of pixels for displaying a video signal; And And a driving device connected to the pixels and supplying a driving signal, The first wiring portion connected to the data electrode is formed at a distance from the second wiring portion connected to the source / drain electrode, Wherein a width of a plurality of wirings of the first wiring portion is narrower than a width of a plurality of wirings of the second wiring portion. delete The semiconductor device according to claim 1, Wherein the second wiring part is provided on both sides of the first wiring part. The semiconductor device according to claim 1, wherein the first wiring portion and / And at least one dummy wiring. The semiconductor device according to claim 1, wherein each of the wirings of the first wiring portion And a width of 120 to 180 micrometers. The semiconductor device according to claim 1, wherein each of the wirings of the second wiring portion And a width of about 160 to about 240 micrometers. The method according to claim 1, Each of the wirings of the first wiring portion and / Wherein each of the plurality of wirings is spaced by a distance of 1 to 1.5 times the width of each of the wirings. The semiconductor device according to claim 1, wherein the wirings constituting the first wiring portion (Boron), Ni (nickel), and Al (nickel), which are doped with Nd (neodymium), Ta (tantalum), Nb (niobium), Mo (molybdenum), W (tungsten) Aluminum). ≪ RTI ID = 0.0 > 11. < / RTI > The method according to claim 1, Each of the wirings constituting the second wiring portion has a three-layer structure, Wherein the conductive layer of the three-layer structure includes Al. The method according to claim 1, And an insulating film provided on at least one side surface of the first wiring portion and / or the second wiring portion.

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