CN108604575B - 用于导电电镀的镭射种晶 - Google Patents
用于导电电镀的镭射种晶 Download PDFInfo
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- CN108604575B CN108604575B CN201780011096.3A CN201780011096A CN108604575B CN 108604575 B CN108604575 B CN 108604575B CN 201780011096 A CN201780011096 A CN 201780011096A CN 108604575 B CN108604575 B CN 108604575B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/692—Ceramics or glasses
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/695—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Ceramic Engineering (AREA)
- Laser Beam Processing (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662315913P | 2016-03-31 | 2016-03-31 | |
| US62/315,913 | 2016-03-31 | ||
| US201662407848P | 2016-10-13 | 2016-10-13 | |
| US62/407,848 | 2016-10-13 | ||
| PCT/US2017/025392 WO2017173281A1 (en) | 2016-03-31 | 2017-03-31 | Laser-seeding for electro-conductive plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108604575A CN108604575A (zh) | 2018-09-28 |
| CN108604575B true CN108604575B (zh) | 2023-05-26 |
Family
ID=59966483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780011096.3A Expired - Fee Related CN108604575B (zh) | 2016-03-31 | 2017-03-31 | 用于导电电镀的镭射种晶 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10957615B2 (https=) |
| EP (1) | EP3437127A4 (https=) |
| JP (2) | JP2019514207A (https=) |
| KR (1) | KR102437034B1 (https=) |
| CN (1) | CN108604575B (https=) |
| TW (2) | TWI757279B (https=) |
| WO (1) | WO2017173281A1 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018207181B4 (de) * | 2018-05-08 | 2023-06-29 | Hegla Boraident Gmbh & Co. Kg | Verfahren zum Markieren von Glastafeln, vorzugsweise von Einscheiben-Sicherheitsglastafeln |
| KR102391800B1 (ko) * | 2018-06-15 | 2022-04-29 | 주식회사 엘지화학 | 비정질 박막의 제조방법 |
| US11426818B2 (en) | 2018-08-10 | 2022-08-30 | The Research Foundation for the State University | Additive manufacturing processes and additively manufactured products |
| US11780210B2 (en) * | 2019-09-18 | 2023-10-10 | Intel Corporation | Glass dielectric layer with patterning |
| DE102019133955B4 (de) * | 2019-12-11 | 2021-08-19 | Lpkf Laser & Electronics Aktiengesellschaft | Verfahren zur Herstellung einer Verbundstruktur aus mindestens einer leitfähigen Struktur |
| EP4140042A4 (en) * | 2020-04-23 | 2024-04-24 | Akash Systems, Inc. | High-efficiency structures for improved wireless communications |
| LU102294B1 (en) * | 2020-12-17 | 2022-06-21 | Fyzikalni Ustav Av Cr V V I | A method and a device for assembly of a nanomaterial structure |
| KR20230136621A (ko) * | 2021-02-11 | 2023-09-26 | 아이오 테크 그룹 엘티디. | 레이저 시스템에 의한 pcb 생산 |
| US11877398B2 (en) * | 2021-02-11 | 2024-01-16 | Io Tech Group Ltd. | PCB production by laser systems |
| US20220266382A1 (en) * | 2021-02-25 | 2022-08-25 | Electro Scientific Industries, Inc. | Laser-seeding for electro-conductive plating |
| US11705365B2 (en) * | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
| US20220399206A1 (en) * | 2021-06-11 | 2022-12-15 | V-Finity Inc. | Method for building conductive through-hole vias in glass substrates |
| US20220406725A1 (en) * | 2021-06-17 | 2022-12-22 | Intel Corporation | Glass package core with planar structures |
| CN113410339B (zh) * | 2021-06-18 | 2023-08-15 | 中科检测技术服务(重庆)有限公司 | 一种高稳定性纳米铜导电薄膜的制备及其应用 |
| EP4120023A1 (en) | 2021-07-15 | 2023-01-18 | Wuhan Dr Laser Technology Corp., Ltd. | Pattern transfer sheet, method of monitoring pattern transfer printing, and pattern transfer printing system |
| IL297544A (en) | 2021-10-22 | 2023-05-01 | Wuhan Dr Laser Tech Corp Ltd | Sheets and methods for transferring a pattern with a release layer and/or paste mixtures |
| IL289428B2 (en) * | 2021-12-27 | 2025-10-01 | Wuhan Dr Laser Tech Corp Ltd | Transfer printing of multi-layered details |
| US12349497B2 (en) * | 2021-12-27 | 2025-07-01 | Wuhan Dr Laser Technology Corp,. Ltd | Pattern transfer printing of multi-layered features |
| EP4201574B1 (en) * | 2021-12-27 | 2026-03-04 | Wuhan Dr Laser Technology Corp., Ltd. | Pattern transfer printing of multi-layered features |
| TWI846031B (zh) * | 2022-08-25 | 2024-06-21 | 華龍國際科技股份有限公司 | 可吸收電路板變形量的均熱片及形成該均熱片的製造方法 |
| KR20240031738A (ko) * | 2022-09-01 | 2024-03-08 | 주식회사 익스톨 | 관통 비아 금속 배선 형성방법 |
| US20240112973A1 (en) * | 2022-09-30 | 2024-04-04 | Intel Corporation | Methods and apparatuses for through-glass vias |
| US20240312888A1 (en) * | 2023-03-14 | 2024-09-19 | Intel Corporation | Via structures in bonded glass substrates |
| US20240332155A1 (en) * | 2023-03-31 | 2024-10-03 | Intel Corporation | Substrates with a glass core and glass buildup layers |
| WO2025078814A1 (en) * | 2023-10-10 | 2025-04-17 | Johnson Matthey Public Limited Company | Method of coating a catalyst on flat or textured substrates |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011129345A (ja) * | 2009-12-17 | 2011-06-30 | Fujifilm Corp | 光熱変換シート、並びに、それを用いた有機電界発光素材シート、及び有機電界発光装置の製造方法 |
| TW201525166A (zh) * | 2013-10-14 | 2015-07-01 | 奧寶科技股份有限公司 | 用於材料沈積之方法和裝置以及供體器件 |
| CN104797087A (zh) * | 2013-12-15 | 2015-07-22 | 奥宝科技有限公司 | 修复印刷电路迹线的方法和设备 |
| WO2015181810A1 (en) * | 2014-05-27 | 2015-12-03 | Orbotech Ltd. | Printing of 3d structures by laser-induced forward transfer |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266446A (en) * | 1990-11-15 | 1993-11-30 | International Business Machines Corporation | Method of making a multilayer thin film structure |
| US6805918B2 (en) * | 1999-01-27 | 2004-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Laser forward transfer of rheological systems |
| US6815015B2 (en) | 1999-01-27 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Navy | Jetting behavior in the laser forward transfer of rheological systems |
| JP2001102724A (ja) * | 1999-09-30 | 2001-04-13 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
| WO2003007370A1 (fr) * | 2001-07-12 | 2003-01-23 | Hitachi, Ltd. | Substrat de cablage en verre et procede de fabrication associe, pate conductrice et module de semi-conducteurs utilises pour ce substrat de cablage en verre, ainsi que procede de formation d'un substrat de cablage et d'un conducteur |
| US20040197541A1 (en) * | 2001-08-02 | 2004-10-07 | Joseph Zahka | Selective electroless deposition and interconnects made therefrom |
| GB2381274A (en) * | 2001-10-29 | 2003-04-30 | Qinetiq Ltd | High resolution patterning method |
| CN1195397C (zh) * | 2002-06-06 | 2005-03-30 | 华中科技大学 | 一种电路板制作和修复方法 |
| JP4031704B2 (ja) * | 2002-12-18 | 2008-01-09 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2007525011A (ja) * | 2003-06-26 | 2007-08-30 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 基材上に充填誘電体材料のパターンを形成するための方法 |
| JP4235945B2 (ja) * | 2003-08-29 | 2009-03-11 | 独立行政法人理化学研究所 | 金属配線形成方法および金属配線形成装置 |
| WO2006100790A1 (ja) * | 2005-03-22 | 2006-09-28 | Cluster Technology Co., Ltd. | 配線基板の製造方法及び配線基板 |
| US7358169B2 (en) | 2005-04-13 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Laser-assisted deposition |
| US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| CN101121575B (zh) | 2007-07-06 | 2010-11-03 | 中国科学院上海光学精密机械研究所 | 利用飞秒激光实现玻璃表面选择性金属化的方法 |
| US7927454B2 (en) * | 2007-07-17 | 2011-04-19 | Samsung Mobile Display Co., Ltd. | Method of patterning a substrate |
| JP4682285B2 (ja) * | 2007-08-30 | 2011-05-11 | 日立電線株式会社 | 配線及び層間接続ビアの形成方法 |
| US8728589B2 (en) * | 2007-09-14 | 2014-05-20 | Photon Dynamics, Inc. | Laser decal transfer of electronic materials |
| US7666568B2 (en) * | 2007-10-23 | 2010-02-23 | E. I. Du Pont De Nemours And Company | Composition and method for providing a patterned metal layer having high conductivity |
| US7998857B2 (en) * | 2007-10-24 | 2011-08-16 | Intel Corporation | Integrated circuit and process for fabricating thereof |
| US8017022B2 (en) * | 2007-12-28 | 2011-09-13 | Intel Corporation | Selective electroless plating for electronic substrates |
| JP5238544B2 (ja) * | 2008-03-07 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| EP2197253A1 (en) * | 2008-12-12 | 2010-06-16 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method for electric circuit deposition |
| US20110089429A1 (en) * | 2009-07-23 | 2011-04-21 | Venkatraman Prabhakar | Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes |
| JP2011178642A (ja) | 2010-03-03 | 2011-09-15 | Nippon Sheet Glass Co Ltd | 貫通電極付きガラス板の製造方法および電子部品 |
| FR2957916B1 (fr) | 2010-03-29 | 2018-02-09 | Universite Des Sciences Et Technologies De Lille | Procede de metallisation selective d'un monolithe de verre a base de silice, et produit obtenu par ce procede |
| WO2011145930A1 (en) | 2010-05-17 | 2011-11-24 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Through silicon via treatment device and method for treatment of tsvs in a chip manufacturing process |
| US8552564B2 (en) * | 2010-12-09 | 2013-10-08 | Intel Corporation | Hybrid-core through holes and vias |
| EP2660352A1 (en) | 2012-05-02 | 2013-11-06 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Donor sheet and method for light induced forward transfer manufacturing |
| US9526184B2 (en) * | 2012-06-29 | 2016-12-20 | Viasystems, Inc. | Circuit board multi-functional hole system and method |
| EP2685515A1 (en) | 2012-07-12 | 2014-01-15 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and system for dividing a barrier foil |
| US10023955B2 (en) * | 2012-08-31 | 2018-07-17 | Fei Company | Seed layer laser-induced deposition |
| JP2014165263A (ja) * | 2013-02-22 | 2014-09-08 | Seiren Co Ltd | 透明電極材の製造方法 |
| US9130016B2 (en) * | 2013-04-15 | 2015-09-08 | Schott Corporation | Method of manufacturing through-glass vias |
| EP2824699A1 (en) | 2013-07-08 | 2015-01-14 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Providing a chip die with electrically conductive elements |
| JP2015138921A (ja) * | 2014-01-24 | 2015-07-30 | 日本ゼオン株式会社 | 電子材料用基板 |
| US9646854B2 (en) * | 2014-03-28 | 2017-05-09 | Intel Corporation | Embedded circuit patterning feature selective electroless copper plating |
| US20150309600A1 (en) * | 2014-04-23 | 2015-10-29 | Uni-Pixel Displays, Inc. | Method of fabricating a conductive pattern with high optical transmission, low reflectance, and low visibility |
| JP5859075B1 (ja) * | 2014-08-07 | 2016-02-10 | 株式会社 M&M研究所 | 配線基板の製造方法、配線基板及び配線基板製造用の分散液 |
-
2017
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- 2017-03-31 WO PCT/US2017/025392 patent/WO2017173281A1/en not_active Ceased
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2022
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011129345A (ja) * | 2009-12-17 | 2011-06-30 | Fujifilm Corp | 光熱変換シート、並びに、それを用いた有機電界発光素材シート、及び有機電界発光装置の製造方法 |
| TW201525166A (zh) * | 2013-10-14 | 2015-07-01 | 奧寶科技股份有限公司 | 用於材料沈積之方法和裝置以及供體器件 |
| CN104797087A (zh) * | 2013-12-15 | 2015-07-22 | 奥宝科技有限公司 | 修复印刷电路迹线的方法和设备 |
| JP2015144252A (ja) * | 2013-12-15 | 2015-08-06 | オーボテック リミテッド | プリント回路配線の修復 |
| WO2015181810A1 (en) * | 2014-05-27 | 2015-12-03 | Orbotech Ltd. | Printing of 3d structures by laser-induced forward transfer |
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| Publication number | Publication date |
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| WO2017173281A1 (en) | 2017-10-05 |
| TW202224211A (zh) | 2022-06-16 |
| JP2019514207A (ja) | 2019-05-30 |
| EP3437127A1 (en) | 2019-02-06 |
| EP3437127A4 (en) | 2019-11-27 |
| CN108604575A (zh) | 2018-09-28 |
| JP2023011656A (ja) | 2023-01-24 |
| TWI757279B (zh) | 2022-03-11 |
| US20190019736A1 (en) | 2019-01-17 |
| KR102437034B1 (ko) | 2022-08-29 |
| US10957615B2 (en) | 2021-03-23 |
| KR20180122462A (ko) | 2018-11-12 |
| TW201737512A (zh) | 2017-10-16 |
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