KR102437034B1 - 전기 전도성 도금을 위한 레이저 시딩 방법 - Google Patents

전기 전도성 도금을 위한 레이저 시딩 방법 Download PDF

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KR102437034B1
KR102437034B1 KR1020187030972A KR20187030972A KR102437034B1 KR 102437034 B1 KR102437034 B1 KR 102437034B1 KR 1020187030972 A KR1020187030972 A KR 1020187030972A KR 20187030972 A KR20187030972 A KR 20187030972A KR 102437034 B1 KR102437034 B1 KR 102437034B1
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workpiece
laser
donor
donor film
laser energy
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KR20180122462A (ko
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조엘 쉬라우벤
장 클레이너트
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일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/692Ceramics or glasses
    • H01L23/15
    • H01L21/268
    • H01L23/142
    • H01L23/145
    • H01L23/147
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/6875Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/695Organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/698Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0502Patterning and lithography
    • H05K2203/0528Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107Using laser light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/682Shapes or dispositions thereof comprising holes having chips therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Ceramic Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemically Coating (AREA)
KR1020187030972A 2016-03-31 2017-03-31 전기 전도성 도금을 위한 레이저 시딩 방법 Active KR102437034B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662315913P 2016-03-31 2016-03-31
US62/315,913 2016-03-31
US201662407848P 2016-10-13 2016-10-13
US62/407,848 2016-10-13
PCT/US2017/025392 WO2017173281A1 (en) 2016-03-31 2017-03-31 Laser-seeding for electro-conductive plating

Publications (2)

Publication Number Publication Date
KR20180122462A KR20180122462A (ko) 2018-11-12
KR102437034B1 true KR102437034B1 (ko) 2022-08-29

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Country Link
US (1) US10957615B2 (https=)
EP (1) EP3437127A4 (https=)
JP (2) JP2019514207A (https=)
KR (1) KR102437034B1 (https=)
CN (1) CN108604575B (https=)
TW (2) TWI757279B (https=)
WO (1) WO2017173281A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018207181B4 (de) * 2018-05-08 2023-06-29 Hegla Boraident Gmbh & Co. Kg Verfahren zum Markieren von Glastafeln, vorzugsweise von Einscheiben-Sicherheitsglastafeln
KR102391800B1 (ko) * 2018-06-15 2022-04-29 주식회사 엘지화학 비정질 박막의 제조방법
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products
US11780210B2 (en) * 2019-09-18 2023-10-10 Intel Corporation Glass dielectric layer with patterning
DE102019133955B4 (de) * 2019-12-11 2021-08-19 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zur Herstellung einer Verbundstruktur aus mindestens einer leitfähigen Struktur
EP4140042A4 (en) * 2020-04-23 2024-04-24 Akash Systems, Inc. High-efficiency structures for improved wireless communications
LU102294B1 (en) * 2020-12-17 2022-06-21 Fyzikalni Ustav Av Cr V V I A method and a device for assembly of a nanomaterial structure
KR20230136621A (ko) * 2021-02-11 2023-09-26 아이오 테크 그룹 엘티디. 레이저 시스템에 의한 pcb 생산
US11877398B2 (en) * 2021-02-11 2024-01-16 Io Tech Group Ltd. PCB production by laser systems
US20220266382A1 (en) * 2021-02-25 2022-08-25 Electro Scientific Industries, Inc. Laser-seeding for electro-conductive plating
US11705365B2 (en) * 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US20220399206A1 (en) * 2021-06-11 2022-12-15 V-Finity Inc. Method for building conductive through-hole vias in glass substrates
US20220406725A1 (en) * 2021-06-17 2022-12-22 Intel Corporation Glass package core with planar structures
CN113410339B (zh) * 2021-06-18 2023-08-15 中科检测技术服务(重庆)有限公司 一种高稳定性纳米铜导电薄膜的制备及其应用
EP4120023A1 (en) 2021-07-15 2023-01-18 Wuhan Dr Laser Technology Corp., Ltd. Pattern transfer sheet, method of monitoring pattern transfer printing, and pattern transfer printing system
IL297544A (en) 2021-10-22 2023-05-01 Wuhan Dr Laser Tech Corp Ltd Sheets and methods for transferring a pattern with a release layer and/or paste mixtures
IL289428B2 (en) * 2021-12-27 2025-10-01 Wuhan Dr Laser Tech Corp Ltd Transfer printing of multi-layered details
US12349497B2 (en) * 2021-12-27 2025-07-01 Wuhan Dr Laser Technology Corp,. Ltd Pattern transfer printing of multi-layered features
EP4201574B1 (en) * 2021-12-27 2026-03-04 Wuhan Dr Laser Technology Corp., Ltd. Pattern transfer printing of multi-layered features
TWI846031B (zh) * 2022-08-25 2024-06-21 華龍國際科技股份有限公司 可吸收電路板變形量的均熱片及形成該均熱片的製造方法
KR20240031738A (ko) * 2022-09-01 2024-03-08 주식회사 익스톨 관통 비아 금속 배선 형성방법
US20240112973A1 (en) * 2022-09-30 2024-04-04 Intel Corporation Methods and apparatuses for through-glass vias
US20240312888A1 (en) * 2023-03-14 2024-09-19 Intel Corporation Via structures in bonded glass substrates
US20240332155A1 (en) * 2023-03-31 2024-10-03 Intel Corporation Substrates with a glass core and glass buildup layers
WO2025078814A1 (en) * 2023-10-10 2025-04-17 Johnson Matthey Public Limited Company Method of coating a catalyst on flat or textured substrates

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197401A1 (en) * 1999-01-27 2002-12-26 Auyeung Reymond C.Y. Laser forward transfer of rheological systems
WO2006100790A1 (ja) * 2005-03-22 2006-09-28 Cluster Technology Co., Ltd. 配線基板の製造方法及び配線基板
US20090057156A1 (en) * 2007-08-30 2009-03-05 Hitachi Cable, Ltd. Production method for wiring and vias
US20090108455A1 (en) * 2007-10-24 2009-04-30 Intel Corporation Integrated circuit and process for fabricating thereof
JP2010533977A (ja) * 2007-07-17 2010-10-28 スリーエム イノベイティブ プロパティズ カンパニー 基材のパターニング方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266446A (en) * 1990-11-15 1993-11-30 International Business Machines Corporation Method of making a multilayer thin film structure
US6815015B2 (en) 1999-01-27 2004-11-09 The United States Of America As Represented By The Secretary Of The Navy Jetting behavior in the laser forward transfer of rheological systems
JP2001102724A (ja) * 1999-09-30 2001-04-13 Ngk Spark Plug Co Ltd 配線基板の製造方法
WO2003007370A1 (fr) * 2001-07-12 2003-01-23 Hitachi, Ltd. Substrat de cablage en verre et procede de fabrication associe, pate conductrice et module de semi-conducteurs utilises pour ce substrat de cablage en verre, ainsi que procede de formation d'un substrat de cablage et d'un conducteur
US20040197541A1 (en) * 2001-08-02 2004-10-07 Joseph Zahka Selective electroless deposition and interconnects made therefrom
GB2381274A (en) * 2001-10-29 2003-04-30 Qinetiq Ltd High resolution patterning method
CN1195397C (zh) * 2002-06-06 2005-03-30 华中科技大学 一种电路板制作和修复方法
JP4031704B2 (ja) * 2002-12-18 2008-01-09 東京エレクトロン株式会社 成膜方法
JP2007525011A (ja) * 2003-06-26 2007-08-30 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 基材上に充填誘電体材料のパターンを形成するための方法
JP4235945B2 (ja) * 2003-08-29 2009-03-11 独立行政法人理化学研究所 金属配線形成方法および金属配線形成装置
US7358169B2 (en) 2005-04-13 2008-04-15 Hewlett-Packard Development Company, L.P. Laser-assisted deposition
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
CN101121575B (zh) 2007-07-06 2010-11-03 中国科学院上海光学精密机械研究所 利用飞秒激光实现玻璃表面选择性金属化的方法
US8728589B2 (en) * 2007-09-14 2014-05-20 Photon Dynamics, Inc. Laser decal transfer of electronic materials
US7666568B2 (en) * 2007-10-23 2010-02-23 E. I. Du Pont De Nemours And Company Composition and method for providing a patterned metal layer having high conductivity
US8017022B2 (en) * 2007-12-28 2011-09-13 Intel Corporation Selective electroless plating for electronic substrates
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
EP2197253A1 (en) * 2008-12-12 2010-06-16 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method for electric circuit deposition
US20110089429A1 (en) * 2009-07-23 2011-04-21 Venkatraman Prabhakar Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes
JP2011129345A (ja) * 2009-12-17 2011-06-30 Fujifilm Corp 光熱変換シート、並びに、それを用いた有機電界発光素材シート、及び有機電界発光装置の製造方法
JP2011178642A (ja) 2010-03-03 2011-09-15 Nippon Sheet Glass Co Ltd 貫通電極付きガラス板の製造方法および電子部品
FR2957916B1 (fr) 2010-03-29 2018-02-09 Universite Des Sciences Et Technologies De Lille Procede de metallisation selective d'un monolithe de verre a base de silice, et produit obtenu par ce procede
WO2011145930A1 (en) 2010-05-17 2011-11-24 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Through silicon via treatment device and method for treatment of tsvs in a chip manufacturing process
US8552564B2 (en) * 2010-12-09 2013-10-08 Intel Corporation Hybrid-core through holes and vias
EP2660352A1 (en) 2012-05-02 2013-11-06 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Donor sheet and method for light induced forward transfer manufacturing
US9526184B2 (en) * 2012-06-29 2016-12-20 Viasystems, Inc. Circuit board multi-functional hole system and method
EP2685515A1 (en) 2012-07-12 2014-01-15 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and system for dividing a barrier foil
US10023955B2 (en) * 2012-08-31 2018-07-17 Fei Company Seed layer laser-induced deposition
JP2014165263A (ja) * 2013-02-22 2014-09-08 Seiren Co Ltd 透明電極材の製造方法
US9130016B2 (en) * 2013-04-15 2015-09-08 Schott Corporation Method of manufacturing through-glass vias
EP2824699A1 (en) 2013-07-08 2015-01-14 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Providing a chip die with electrically conductive elements
EP3058113B1 (en) * 2013-10-14 2020-12-02 Orbotech Ltd. Lift printing of multi-composition material structures
JP6665386B2 (ja) * 2013-12-15 2020-03-13 オーボテック リミテッド プリント回路配線の修復
JP2015138921A (ja) * 2014-01-24 2015-07-30 日本ゼオン株式会社 電子材料用基板
US9646854B2 (en) * 2014-03-28 2017-05-09 Intel Corporation Embedded circuit patterning feature selective electroless copper plating
US20150309600A1 (en) * 2014-04-23 2015-10-29 Uni-Pixel Displays, Inc. Method of fabricating a conductive pattern with high optical transmission, low reflectance, and low visibility
WO2015181810A1 (en) * 2014-05-27 2015-12-03 Orbotech Ltd. Printing of 3d structures by laser-induced forward transfer
JP5859075B1 (ja) * 2014-08-07 2016-02-10 株式会社 M&M研究所 配線基板の製造方法、配線基板及び配線基板製造用の分散液

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197401A1 (en) * 1999-01-27 2002-12-26 Auyeung Reymond C.Y. Laser forward transfer of rheological systems
WO2006100790A1 (ja) * 2005-03-22 2006-09-28 Cluster Technology Co., Ltd. 配線基板の製造方法及び配線基板
JP2010533977A (ja) * 2007-07-17 2010-10-28 スリーエム イノベイティブ プロパティズ カンパニー 基材のパターニング方法
US20090057156A1 (en) * 2007-08-30 2009-03-05 Hitachi Cable, Ltd. Production method for wiring and vias
US20090108455A1 (en) * 2007-10-24 2009-04-30 Intel Corporation Integrated circuit and process for fabricating thereof

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