JP2019514207A - 導電めっきのためのレーザシーディング - Google Patents
導電めっきのためのレーザシーディング Download PDFInfo
- Publication number
- JP2019514207A JP2019514207A JP2018551419A JP2018551419A JP2019514207A JP 2019514207 A JP2019514207 A JP 2019514207A JP 2018551419 A JP2018551419 A JP 2018551419A JP 2018551419 A JP2018551419 A JP 2018551419A JP 2019514207 A JP2019514207 A JP 2019514207A
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- substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/692—Ceramics or glasses
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/695—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Ceramic Engineering (AREA)
- Laser Beam Processing (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemically Coating (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022164917A JP2023011656A (ja) | 2016-03-31 | 2022-10-13 | 導電めっきのためのレーザシーディング |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662315913P | 2016-03-31 | 2016-03-31 | |
| US62/315,913 | 2016-03-31 | ||
| US201662407848P | 2016-10-13 | 2016-10-13 | |
| US62/407,848 | 2016-10-13 | ||
| PCT/US2017/025392 WO2017173281A1 (en) | 2016-03-31 | 2017-03-31 | Laser-seeding for electro-conductive plating |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022164917A Division JP2023011656A (ja) | 2016-03-31 | 2022-10-13 | 導電めっきのためのレーザシーディング |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019514207A true JP2019514207A (ja) | 2019-05-30 |
| JP2019514207A5 JP2019514207A5 (https=) | 2020-04-30 |
Family
ID=59966483
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018551419A Ceased JP2019514207A (ja) | 2016-03-31 | 2017-03-31 | 導電めっきのためのレーザシーディング |
| JP2022164917A Pending JP2023011656A (ja) | 2016-03-31 | 2022-10-13 | 導電めっきのためのレーザシーディング |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022164917A Pending JP2023011656A (ja) | 2016-03-31 | 2022-10-13 | 導電めっきのためのレーザシーディング |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10957615B2 (https=) |
| EP (1) | EP3437127A4 (https=) |
| JP (2) | JP2019514207A (https=) |
| KR (1) | KR102437034B1 (https=) |
| CN (1) | CN108604575B (https=) |
| TW (2) | TWI757279B (https=) |
| WO (1) | WO2017173281A1 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022115801A (ja) * | 2020-12-17 | 2022-08-09 | フィジカルニ ウースタヴ アーヴェー チェーエル ヴェーヴェーイー | ナノマテリアル構造体を製造する方法およびデバイス |
| JP2022548474A (ja) * | 2019-09-18 | 2022-11-21 | インテル・コーポレーション | パターニングを含むガラス誘電体層 |
| JP2024510548A (ja) * | 2021-02-11 | 2024-03-08 | アイオー テック グループ リミテッド | レーザシステムによるプリント基板製造法 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018207181B4 (de) * | 2018-05-08 | 2023-06-29 | Hegla Boraident Gmbh & Co. Kg | Verfahren zum Markieren von Glastafeln, vorzugsweise von Einscheiben-Sicherheitsglastafeln |
| KR102391800B1 (ko) * | 2018-06-15 | 2022-04-29 | 주식회사 엘지화학 | 비정질 박막의 제조방법 |
| US11426818B2 (en) | 2018-08-10 | 2022-08-30 | The Research Foundation for the State University | Additive manufacturing processes and additively manufactured products |
| DE102019133955B4 (de) * | 2019-12-11 | 2021-08-19 | Lpkf Laser & Electronics Aktiengesellschaft | Verfahren zur Herstellung einer Verbundstruktur aus mindestens einer leitfähigen Struktur |
| EP4140042A4 (en) * | 2020-04-23 | 2024-04-24 | Akash Systems, Inc. | High-efficiency structures for improved wireless communications |
| US11877398B2 (en) * | 2021-02-11 | 2024-01-16 | Io Tech Group Ltd. | PCB production by laser systems |
| US20220266382A1 (en) * | 2021-02-25 | 2022-08-25 | Electro Scientific Industries, Inc. | Laser-seeding for electro-conductive plating |
| US11705365B2 (en) * | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
| US20220399206A1 (en) * | 2021-06-11 | 2022-12-15 | V-Finity Inc. | Method for building conductive through-hole vias in glass substrates |
| US20220406725A1 (en) * | 2021-06-17 | 2022-12-22 | Intel Corporation | Glass package core with planar structures |
| CN113410339B (zh) * | 2021-06-18 | 2023-08-15 | 中科检测技术服务(重庆)有限公司 | 一种高稳定性纳米铜导电薄膜的制备及其应用 |
| EP4120023A1 (en) | 2021-07-15 | 2023-01-18 | Wuhan Dr Laser Technology Corp., Ltd. | Pattern transfer sheet, method of monitoring pattern transfer printing, and pattern transfer printing system |
| IL297544A (en) | 2021-10-22 | 2023-05-01 | Wuhan Dr Laser Tech Corp Ltd | Sheets and methods for transferring a pattern with a release layer and/or paste mixtures |
| IL289428B2 (en) * | 2021-12-27 | 2025-10-01 | Wuhan Dr Laser Tech Corp Ltd | Transfer printing of multi-layered details |
| US12349497B2 (en) * | 2021-12-27 | 2025-07-01 | Wuhan Dr Laser Technology Corp,. Ltd | Pattern transfer printing of multi-layered features |
| EP4201574B1 (en) * | 2021-12-27 | 2026-03-04 | Wuhan Dr Laser Technology Corp., Ltd. | Pattern transfer printing of multi-layered features |
| TWI846031B (zh) * | 2022-08-25 | 2024-06-21 | 華龍國際科技股份有限公司 | 可吸收電路板變形量的均熱片及形成該均熱片的製造方法 |
| KR20240031738A (ko) * | 2022-09-01 | 2024-03-08 | 주식회사 익스톨 | 관통 비아 금속 배선 형성방법 |
| US20240112973A1 (en) * | 2022-09-30 | 2024-04-04 | Intel Corporation | Methods and apparatuses for through-glass vias |
| US20240312888A1 (en) * | 2023-03-14 | 2024-09-19 | Intel Corporation | Via structures in bonded glass substrates |
| US20240332155A1 (en) * | 2023-03-31 | 2024-10-03 | Intel Corporation | Substrates with a glass core and glass buildup layers |
| WO2025078814A1 (en) * | 2023-10-10 | 2025-04-17 | Johnson Matthey Public Limited Company | Method of coating a catalyst on flat or textured substrates |
Citations (11)
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| JP2001102724A (ja) * | 1999-09-30 | 2001-04-13 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
| JP2005079245A (ja) * | 2003-08-29 | 2005-03-24 | Institute Of Physical & Chemical Research | 金属配線形成方法および金属配線形成装置 |
| WO2006100790A1 (ja) * | 2005-03-22 | 2006-09-28 | Cluster Technology Co., Ltd. | 配線基板の製造方法及び配線基板 |
| US20080026543A1 (en) * | 2006-07-28 | 2008-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP2010533977A (ja) * | 2007-07-17 | 2010-10-28 | スリーエム イノベイティブ プロパティズ カンパニー | 基材のパターニング方法 |
| JP2011503348A (ja) * | 2007-10-23 | 2011-01-27 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 組成物および高い伝導性を有するパターニングされた金属層の提供方法 |
| US20110298135A1 (en) * | 2007-10-24 | 2011-12-08 | Charan Gurumurthy | Integrated circuit and process for fabricating thereof |
| JP2014165263A (ja) * | 2013-02-22 | 2014-09-08 | Seiren Co Ltd | 透明電極材の製造方法 |
| JP2015138921A (ja) * | 2014-01-24 | 2015-07-30 | 日本ゼオン株式会社 | 電子材料用基板 |
| JP2015144252A (ja) * | 2013-12-15 | 2015-08-06 | オーボテック リミテッド | プリント回路配線の修復 |
| JP2016039239A (ja) * | 2014-08-07 | 2016-03-22 | 株式会社 M&M研究所 | 配線基板の製造方法、配線基板及び配線基板製造用の分散液 |
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| JP2011178642A (ja) | 2010-03-03 | 2011-09-15 | Nippon Sheet Glass Co Ltd | 貫通電極付きガラス板の製造方法および電子部品 |
| FR2957916B1 (fr) | 2010-03-29 | 2018-02-09 | Universite Des Sciences Et Technologies De Lille | Procede de metallisation selective d'un monolithe de verre a base de silice, et produit obtenu par ce procede |
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- 2017-03-31 WO PCT/US2017/025392 patent/WO2017173281A1/en not_active Ceased
- 2017-03-31 JP JP2018551419A patent/JP2019514207A/ja not_active Ceased
- 2017-03-31 KR KR1020187030972A patent/KR102437034B1/ko active Active
- 2017-03-31 TW TW111105458A patent/TW202224211A/zh unknown
- 2017-03-31 EP EP17776782.9A patent/EP3437127A4/en not_active Withdrawn
- 2017-03-31 US US16/067,693 patent/US10957615B2/en not_active Expired - Fee Related
- 2017-03-31 CN CN201780011096.3A patent/CN108604575B/zh not_active Expired - Fee Related
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| JP2022548474A (ja) * | 2019-09-18 | 2022-11-21 | インテル・コーポレーション | パターニングを含むガラス誘電体層 |
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| JP2022115801A (ja) * | 2020-12-17 | 2022-08-09 | フィジカルニ ウースタヴ アーヴェー チェーエル ヴェーヴェーイー | ナノマテリアル構造体を製造する方法およびデバイス |
| JP7527588B2 (ja) | 2020-12-17 | 2024-08-05 | フィジカルニ ウースタヴ アーヴェー チェーエル ヴェーヴェーイー | ナノマテリアル構造体を製造する方法およびデバイス |
| JP2024510548A (ja) * | 2021-02-11 | 2024-03-08 | アイオー テック グループ リミテッド | レーザシステムによるプリント基板製造法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017173281A1 (en) | 2017-10-05 |
| TW202224211A (zh) | 2022-06-16 |
| EP3437127A1 (en) | 2019-02-06 |
| CN108604575B (zh) | 2023-05-26 |
| EP3437127A4 (en) | 2019-11-27 |
| CN108604575A (zh) | 2018-09-28 |
| JP2023011656A (ja) | 2023-01-24 |
| TWI757279B (zh) | 2022-03-11 |
| US20190019736A1 (en) | 2019-01-17 |
| KR102437034B1 (ko) | 2022-08-29 |
| US10957615B2 (en) | 2021-03-23 |
| KR20180122462A (ko) | 2018-11-12 |
| TW201737512A (zh) | 2017-10-16 |
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