CN108604575B - 用于导电电镀的镭射种晶 - Google Patents

用于导电电镀的镭射种晶 Download PDF

Info

Publication number
CN108604575B
CN108604575B CN201780011096.3A CN201780011096A CN108604575B CN 108604575 B CN108604575 B CN 108604575B CN 201780011096 A CN201780011096 A CN 201780011096A CN 108604575 B CN108604575 B CN 108604575B
Authority
CN
China
Prior art keywords
workpiece
laser
donor film
donor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201780011096.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN108604575A (zh
Inventor
杰伊尔·卻瑞本恩
杰恩·克雷能特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Irecto Science Industry Co ltd
Original Assignee
Irecto Science Industry Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Irecto Science Industry Co ltd filed Critical Irecto Science Industry Co ltd
Publication of CN108604575A publication Critical patent/CN108604575A/zh
Application granted granted Critical
Publication of CN108604575B publication Critical patent/CN108604575B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laser Beam Processing (AREA)
  • Chemically Coating (AREA)
CN201780011096.3A 2016-03-31 2017-03-31 用于导电电镀的镭射种晶 Expired - Fee Related CN108604575B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662315913P 2016-03-31 2016-03-31
US62/315,913 2016-03-31
US201662407848P 2016-10-13 2016-10-13
US62/407,848 2016-10-13
PCT/US2017/025392 WO2017173281A1 (en) 2016-03-31 2017-03-31 Laser-seeding for electro-conductive plating

Publications (2)

Publication Number Publication Date
CN108604575A CN108604575A (zh) 2018-09-28
CN108604575B true CN108604575B (zh) 2023-05-26

Family

ID=59966483

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780011096.3A Expired - Fee Related CN108604575B (zh) 2016-03-31 2017-03-31 用于导电电镀的镭射种晶

Country Status (7)

Country Link
US (1) US10957615B2 (enExample)
EP (1) EP3437127A4 (enExample)
JP (2) JP2019514207A (enExample)
KR (1) KR102437034B1 (enExample)
CN (1) CN108604575B (enExample)
TW (2) TW202224211A (enExample)
WO (1) WO2017173281A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018207181B4 (de) * 2018-05-08 2023-06-29 Hegla Boraident Gmbh & Co. Kg Verfahren zum Markieren von Glastafeln, vorzugsweise von Einscheiben-Sicherheitsglastafeln
KR102391800B1 (ko) * 2018-06-15 2022-04-29 주식회사 엘지화학 비정질 박막의 제조방법
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
US11780210B2 (en) * 2019-09-18 2023-10-10 Intel Corporation Glass dielectric layer with patterning
DE102019133955B4 (de) * 2019-12-11 2021-08-19 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zur Herstellung einer Verbundstruktur aus mindestens einer leitfähigen Struktur
WO2021217056A1 (en) * 2020-04-23 2021-10-28 Akash Systems, Inc. High-efficiency structures for improved wireless communications
LU102294B1 (en) * 2020-12-17 2022-06-21 Fyzikalni Ustav Av Cr V V I A method and a device for assembly of a nanomaterial structure
JP2024510548A (ja) * 2021-02-11 2024-03-08 アイオー テック グループ リミテッド レーザシステムによるプリント基板製造法
US11877398B2 (en) * 2021-02-11 2024-01-16 Io Tech Group Ltd. PCB production by laser systems
US20220266382A1 (en) * 2021-02-25 2022-08-25 Electro Scientific Industries, Inc. Laser-seeding for electro-conductive plating
US11705365B2 (en) * 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US20220399206A1 (en) * 2021-06-11 2022-12-15 V-Finity Inc. Method for building conductive through-hole vias in glass substrates
US20220406725A1 (en) * 2021-06-17 2022-12-22 Intel Corporation Glass package core with planar structures
CN113410339B (zh) * 2021-06-18 2023-08-15 中科检测技术服务(重庆)有限公司 一种高稳定性纳米铜导电薄膜的制备及其应用
EP4120023A1 (en) 2021-07-15 2023-01-18 Wuhan Dr Laser Technology Corp., Ltd. Pattern transfer sheet, method of monitoring pattern transfer printing, and pattern transfer printing system
IL297544A (en) 2021-10-22 2023-05-01 Wuhan Dr Laser Tech Corp Ltd Sheets and methods for transferring a pattern with a release layer and/or paste mixtures
IL289428B2 (en) * 2021-12-27 2025-10-01 Wuhan Dr Laser Tech Corp Ltd Transfer printing of multi-layered details
EP4201574A1 (en) * 2021-12-27 2023-06-28 Wuhan Dr Laser Technology Corp., Ltd. Pattern transfer printing of multi-layered features
US12349497B2 (en) * 2021-12-27 2025-07-01 Wuhan Dr Laser Technology Corp,. Ltd Pattern transfer printing of multi-layered features
TWI846031B (zh) * 2022-08-25 2024-06-21 華龍國際科技股份有限公司 可吸收電路板變形量的均熱片及形成該均熱片的製造方法
KR20240031738A (ko) * 2022-09-01 2024-03-08 주식회사 익스톨 관통 비아 금속 배선 형성방법
US20240312888A1 (en) * 2023-03-14 2024-09-19 Intel Corporation Via structures in bonded glass substrates
US20240332155A1 (en) * 2023-03-31 2024-10-03 Intel Corporation Substrates with a glass core and glass buildup layers
EP4537935A1 (en) * 2023-10-10 2025-04-16 Johnson Matthey Public Limited Company Method of coating a catalyst on flat or textured substrates

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011129345A (ja) * 2009-12-17 2011-06-30 Fujifilm Corp 光熱変換シート、並びに、それを用いた有機電界発光素材シート、及び有機電界発光装置の製造方法
TW201525166A (zh) * 2013-10-14 2015-07-01 Orbotech Ltd 用於材料沈積之方法和裝置以及供體器件
CN104797087A (zh) * 2013-12-15 2015-07-22 奥宝科技有限公司 修复印刷电路迹线的方法和设备
WO2015181810A1 (en) * 2014-05-27 2015-12-03 Orbotech Ltd. Printing of 3d structures by laser-induced forward transfer

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266446A (en) * 1990-11-15 1993-11-30 International Business Machines Corporation Method of making a multilayer thin film structure
US6815015B2 (en) 1999-01-27 2004-11-09 The United States Of America As Represented By The Secretary Of The Navy Jetting behavior in the laser forward transfer of rheological systems
US6805918B2 (en) * 1999-01-27 2004-10-19 The United States Of America As Represented By The Secretary Of The Navy Laser forward transfer of rheological systems
JP2001102724A (ja) * 1999-09-30 2001-04-13 Ngk Spark Plug Co Ltd 配線基板の製造方法
TWI224382B (en) * 2001-07-12 2004-11-21 Hitachi Ltd Wiring glass substrate and manufacturing method thereof, conductive paste and semiconductor module used for the same, and conductor forming method
US20040197541A1 (en) * 2001-08-02 2004-10-07 Joseph Zahka Selective electroless deposition and interconnects made therefrom
GB2381274A (en) * 2001-10-29 2003-04-30 Qinetiq Ltd High resolution patterning method
CN1195397C (zh) * 2002-06-06 2005-03-30 华中科技大学 一种电路板制作和修复方法
JP4031704B2 (ja) * 2002-12-18 2008-01-09 東京エレクトロン株式会社 成膜方法
JP2007525011A (ja) * 2003-06-26 2007-08-30 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 基材上に充填誘電体材料のパターンを形成するための方法
JP4235945B2 (ja) * 2003-08-29 2009-03-11 独立行政法人理化学研究所 金属配線形成方法および金属配線形成装置
EP1863327A1 (en) * 2005-03-22 2007-12-05 Cluster Technology Co., Ltd Process for producing wiring board, and wiring board
US7358169B2 (en) * 2005-04-13 2008-04-15 Hewlett-Packard Development Company, L.P. Laser-assisted deposition
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
CN101121575B (zh) 2007-07-06 2010-11-03 中国科学院上海光学精密机械研究所 利用飞秒激光实现玻璃表面选择性金属化的方法
US7927454B2 (en) * 2007-07-17 2011-04-19 Samsung Mobile Display Co., Ltd. Method of patterning a substrate
JP4682285B2 (ja) * 2007-08-30 2011-05-11 日立電線株式会社 配線及び層間接続ビアの形成方法
US8728589B2 (en) * 2007-09-14 2014-05-20 Photon Dynamics, Inc. Laser decal transfer of electronic materials
US7666568B2 (en) * 2007-10-23 2010-02-23 E. I. Du Pont De Nemours And Company Composition and method for providing a patterned metal layer having high conductivity
US7998857B2 (en) * 2007-10-24 2011-08-16 Intel Corporation Integrated circuit and process for fabricating thereof
US8017022B2 (en) * 2007-12-28 2011-09-13 Intel Corporation Selective electroless plating for electronic substrates
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
EP2197253A1 (en) * 2008-12-12 2010-06-16 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method for electric circuit deposition
WO2011011764A2 (en) * 2009-07-23 2011-01-27 Gigasi Solar, Inc. Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes
JP2011178642A (ja) * 2010-03-03 2011-09-15 Nippon Sheet Glass Co Ltd 貫通電極付きガラス板の製造方法および電子部品
FR2957916B1 (fr) 2010-03-29 2018-02-09 Universite Des Sciences Et Technologies De Lille Procede de metallisation selective d'un monolithe de verre a base de silice, et produit obtenu par ce procede
TW201205761A (en) 2010-05-17 2012-02-01 Tno Through silicon via treatment device and method arranged for treatment of TSVs in a chip manufacturing process
US8552564B2 (en) * 2010-12-09 2013-10-08 Intel Corporation Hybrid-core through holes and vias
EP2660352A1 (en) 2012-05-02 2013-11-06 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Donor sheet and method for light induced forward transfer manufacturing
US9526184B2 (en) * 2012-06-29 2016-12-20 Viasystems, Inc. Circuit board multi-functional hole system and method
EP2685515A1 (en) * 2012-07-12 2014-01-15 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and system for dividing a barrier foil
US10023955B2 (en) * 2012-08-31 2018-07-17 Fei Company Seed layer laser-induced deposition
JP2014165263A (ja) * 2013-02-22 2014-09-08 Seiren Co Ltd 透明電極材の製造方法
US9130016B2 (en) * 2013-04-15 2015-09-08 Schott Corporation Method of manufacturing through-glass vias
EP2824699A1 (en) 2013-07-08 2015-01-14 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Providing a chip die with electrically conductive elements
JP2015138921A (ja) * 2014-01-24 2015-07-30 日本ゼオン株式会社 電子材料用基板
US9646854B2 (en) * 2014-03-28 2017-05-09 Intel Corporation Embedded circuit patterning feature selective electroless copper plating
US20150309600A1 (en) * 2014-04-23 2015-10-29 Uni-Pixel Displays, Inc. Method of fabricating a conductive pattern with high optical transmission, low reflectance, and low visibility
JP5859075B1 (ja) * 2014-08-07 2016-02-10 株式会社 Ｍ＆Ｍ研究所 配線基板の製造方法、配線基板及び配線基板製造用の分散液

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011129345A (ja) * 2009-12-17 2011-06-30 Fujifilm Corp 光熱変換シート、並びに、それを用いた有機電界発光素材シート、及び有機電界発光装置の製造方法
TW201525166A (zh) * 2013-10-14 2015-07-01 Orbotech Ltd 用於材料沈積之方法和裝置以及供體器件
CN104797087A (zh) * 2013-12-15 2015-07-22 奥宝科技有限公司 修复印刷电路迹线的方法和设备
JP2015144252A (ja) * 2013-12-15 2015-08-06 オーボテック リミテッド プリント回路配線の修復
WO2015181810A1 (en) * 2014-05-27 2015-12-03 Orbotech Ltd. Printing of 3d structures by laser-induced forward transfer

Also Published As

Publication number Publication date
US20190019736A1 (en) 2019-01-17
WO2017173281A1 (en) 2017-10-05
JP2023011656A (ja) 2023-01-24
JP2019514207A (ja) 2019-05-30
CN108604575A (zh) 2018-09-28
US10957615B2 (en) 2021-03-23
EP3437127A4 (en) 2019-11-27
TW201737512A (zh) 2017-10-16
EP3437127A1 (en) 2019-02-06
TW202224211A (zh) 2022-06-16
TWI757279B (zh) 2022-03-11
KR20180122462A (ko) 2018-11-12
KR102437034B1 (ko) 2022-08-29

Similar Documents

Publication Publication Date Title
CN108604575B (zh) 用于导电电镀的镭射种晶
CN103781285B (zh) 陶瓷基板表面导电线路的制作与修复方法
Hong et al. Selective laser direct patterning of silver nanowire percolation network transparent conductor for capacitive touch panel
TWI623633B (zh) 用於材料沈積之方法和裝置以及供體器件
CN104750311B (zh) 金属网格导电膜的制作方法、金属网格导电膜及触控面板
CN104105353B (zh) 一种高精度陶瓷电路板的制作方法
Min et al. Fabrication of 10 µm-scale conductive Cu patterns by selective laser sintering of Cu complex ink
US20120055013A1 (en) Forming microstructures and antennas for transponders
JP2017528902A (ja) レーザ誘起前方転写法による３ｄ構造印刷
TW201103960A (en) Metallic ink
CN101002515A (zh) 通过直接写入技术制造电子电路器件的方法
KR20120023714A (ko) 반도체 기판을 접촉시키는 방법
Yang et al. Understanding the sintering and heat dissipation behaviours of Cu nanoparticles during low-temperature selective laser sintering process on flexible substrates
JP2014192465A (ja) 電気回路配線基板の製造方法
Lim et al. Ultrafast laser-assisted selective removal of self-assembled Ag network electrodes for flexible and transparent film heaters
WO2023231234A1 (zh) Fcbga封装基板的制备方法
US20220266382A1 (en) Laser-seeding for electro-conductive plating
WO2022144608A1 (en) Lift printing of fine metal lines
Pique et al. Direct writing of electronic materials using a new laser-assisted transfer/annealing technique
Xu et al. Single-step selective metallization on insulating substrates by laser-induced molten transfer
Maekawa et al. Packaging of electronic modules through completely dry process
Schrauben Laser ablation and seeding for the preparation of highly transparent copper conductive networks on glass
JP2011009263A (ja) プリント配線板用基板の穴加工方法、その穴加工方法を用いたプリント配線板用基板
Schrauben et al. Laser-Based Methodology for the Application of Glass as a Dielectric and Cu Pattern Carrier for Printed Circuit Boards
Kordás Laser-assisted chemical liquid-phase deposition of metals for micro-and optoelectronics

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20230526

CF01 Termination of patent right due to non-payment of annual fee