CN108604538A - 用于生产复合GaN纳米柱的方法及由该方法制成的发光结构 - Google Patents

用于生产复合GaN纳米柱的方法及由该方法制成的发光结构 Download PDF

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Publication number
CN108604538A
CN108604538A CN201680081684.XA CN201680081684A CN108604538A CN 108604538 A CN108604538 A CN 108604538A CN 201680081684 A CN201680081684 A CN 201680081684A CN 108604538 A CN108604538 A CN 108604538A
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composite nano
column
gan
nano column
pillar
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Chinese (zh)
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A.沃尔科瓦
V.伊万索夫
A.塞尔金
B.哈斯克尔
H.埃尔-古劳里
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Ostendo Technologies Inc
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Ostendo Technologies Inc
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    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
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    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
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CN201680081684.XA 2015-12-14 2016-12-14 用于生产复合GaN纳米柱的方法及由该方法制成的发光结构 Pending CN108604538A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562267117P 2015-12-14 2015-12-14
US62/267117 2015-12-14
US15/377,775 US11322652B2 (en) 2015-12-14 2016-12-13 Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
US15/377775 2016-12-13
PCT/US2016/066729 WO2017106387A1 (en) 2015-12-14 2016-12-14 METHODS FOR PRODUCING COMPOSITE GaN NANOCOLUMNS AND LIGHT EMITTING STRUCTURES MADE FROM THE METHODS

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CN108604538A true CN108604538A (zh) 2018-09-28

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CN201680081684.XA Pending CN108604538A (zh) 2015-12-14 2016-12-14 用于生产复合GaN纳米柱的方法及由该方法制成的发光结构

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US (1) US11322652B2 (https=)
JP (1) JP6947746B2 (https=)
KR (1) KR20180095608A (https=)
CN (1) CN108604538A (https=)
TW (1) TWI740865B (https=)
WO (1) WO2017106387A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993755A (zh) * 2019-12-18 2020-04-10 天津工业大学 电注入三维GaN核壳结构Nano-LED及制造方法
CN116705889A (zh) * 2023-06-28 2023-09-05 北京科技大学 梯度应变调控的范德华异质结型光电探测器及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
CN109148654B (zh) * 2018-08-30 2020-04-07 芜湖德豪润达光电科技有限公司 非极性面ⅲ族氮化物外延结构及其制备方法
US10854646B2 (en) * 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector
SG11202100867RA (en) * 2019-03-12 2021-03-30 Ulvac Inc Vacuum deposition apparatus
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
WO2024084634A1 (ja) * 2022-10-19 2024-04-25 京セラ株式会社 半導体基板、半導体基板の製造方法および製造装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443887A (zh) * 2006-03-10 2009-05-27 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
CN101685774A (zh) * 2008-09-24 2010-03-31 北京邮电大学 一种基于界面纳米结构的异质外延生长工艺
CN103098216A (zh) * 2010-06-24 2013-05-08 Glo公司 具有用于定向纳米线生长的缓冲层的衬底
CN103531447A (zh) * 2012-07-06 2014-01-22 中国科学院金属研究所 一种降低氮化镓纳米线阵列晶体缺陷密度的方法
US8658519B1 (en) * 2008-12-19 2014-02-25 Stc.Unm Nanowires, nanowire networks and methods for their formation and use

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003089696A1 (en) * 2002-04-15 2003-10-30 The Regents Of The University Of California Dislocation reduction in non-polar gallium nitride thin films
KR20060127743A (ko) * 2005-06-06 2006-12-13 스미토모덴키고교가부시키가이샤 질화물 반도체 기판과 그 제조 방법
JP2007048869A (ja) * 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
AU2007313096B2 (en) 2006-03-10 2011-11-10 Unm Rainforest Innovations Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
JP5082752B2 (ja) * 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
US8964020B2 (en) * 2007-04-25 2015-02-24 Stc.Unm Solid-state microscope for selectively imaging a sample
US8652947B2 (en) 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
US7745315B1 (en) 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
US8188513B2 (en) * 2007-10-04 2012-05-29 Stc.Unm Nanowire and larger GaN based HEMTS
KR20100093872A (ko) * 2009-02-17 2010-08-26 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
US8409892B2 (en) 2011-04-14 2013-04-02 Opto Tech Corporation Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates
WO2013015810A2 (en) 2011-07-27 2013-01-31 Hewlett-Packard Development Company, L.P. Surface enhanced raman spectroscopy employing a nanorod in a surface indentation
EP2912699B1 (en) * 2012-10-26 2019-12-18 Glo Ab Method for modifying selected portions of nanowire sized opto-electronic structure
US11502219B2 (en) 2013-03-14 2022-11-15 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
KR102070209B1 (ko) * 2013-07-01 2020-01-28 엘지전자 주식회사 성장기판 및 그를 포함하는 발광소자
US9171843B2 (en) 2013-08-02 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and fabricating the same
US9053890B2 (en) * 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making
US9281442B2 (en) 2013-12-17 2016-03-08 Glo Ab III-nitride nanowire LED with strain modified surface active region and method of making thereof
KR102140741B1 (ko) * 2014-02-18 2020-08-03 엘지전자 주식회사 무분극 이종 기판 및 그 제조방법, 이를 이용한 질화물 반도체 발광 소자
FR3019188B1 (fr) * 2014-03-27 2017-11-24 Commissariat Energie Atomique Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443887A (zh) * 2006-03-10 2009-05-27 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
CN101685774A (zh) * 2008-09-24 2010-03-31 北京邮电大学 一种基于界面纳米结构的异质外延生长工艺
US8658519B1 (en) * 2008-12-19 2014-02-25 Stc.Unm Nanowires, nanowire networks and methods for their formation and use
CN103098216A (zh) * 2010-06-24 2013-05-08 Glo公司 具有用于定向纳米线生长的缓冲层的衬底
CN103531447A (zh) * 2012-07-06 2014-01-22 中国科学院金属研究所 一种降低氮化镓纳米线阵列晶体缺陷密度的方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993755A (zh) * 2019-12-18 2020-04-10 天津工业大学 电注入三维GaN核壳结构Nano-LED及制造方法
CN110993755B (zh) * 2019-12-18 2021-09-21 天津工业大学 电注入三维GaN核壳结构Nano-LED及制造方法
CN116705889A (zh) * 2023-06-28 2023-09-05 北京科技大学 梯度应变调控的范德华异质结型光电探测器及其制备方法
CN116705889B (zh) * 2023-06-28 2024-02-27 北京科技大学 梯度应变调控的范德华异质结型光电探测器及其制备方法

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