CN108473749B - 衍生自降冰片二烯和马来酸酐的聚合物及其用途 - Google Patents

衍生自降冰片二烯和马来酸酐的聚合物及其用途 Download PDF

Info

Publication number
CN108473749B
CN108473749B CN201680076530.1A CN201680076530A CN108473749B CN 108473749 B CN108473749 B CN 108473749B CN 201680076530 A CN201680076530 A CN 201680076530A CN 108473749 B CN108473749 B CN 108473749B
Authority
CN
China
Prior art keywords
alkyl
polymer
group
general formula
maleic anhydride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680076530.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN108473749A (zh
Inventor
L·F·罗德
P·坎达纳朗齐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Dianwood Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Promerus LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd, Promerus LLC filed Critical Sumitomo Bakelite Co Ltd
Publication of CN108473749A publication Critical patent/CN108473749A/zh
Application granted granted Critical
Publication of CN108473749B publication Critical patent/CN108473749B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/06—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having two or more carbon-to-carbon double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/04—Anhydrides, e.g. cyclic anhydrides
    • C08F22/06—Maleic anhydride
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/02—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F32/06—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having two or more carbon-to-carbon double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L47/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
CN201680076530.1A 2015-12-31 2016-12-30 衍生自降冰片二烯和马来酸酐的聚合物及其用途 Active CN108473749B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562273553P 2015-12-31 2015-12-31
US62/273,553 2015-12-31
PCT/US2016/069375 WO2017117483A1 (en) 2015-12-31 2016-12-30 Polymers derived from norbornadiene and maleic anhydride and use thereof

Publications (2)

Publication Number Publication Date
CN108473749A CN108473749A (zh) 2018-08-31
CN108473749B true CN108473749B (zh) 2019-11-26

Family

ID=57985011

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680076530.1A Active CN108473749B (zh) 2015-12-31 2016-12-30 衍生自降冰片二烯和马来酸酐的聚合物及其用途

Country Status (6)

Country Link
US (2) US9834627B2 (https=)
JP (1) JP6726281B2 (https=)
KR (1) KR101930045B1 (https=)
CN (1) CN108473749B (https=)
TW (1) TWI692674B (https=)
WO (1) WO2017117483A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692674B (zh) * 2015-12-31 2020-05-01 日商住友電木股份有限公司 衍生自降莰二烯和馬來酸酐之聚合物及其用途
EP3837266A1 (en) 2018-08-17 2021-06-23 Massachusetts Institute of Technology Degradable polymers of a cyclic silyl ether and uses thereof
JP7322372B2 (ja) * 2018-09-28 2023-08-08 住友ベークライト株式会社 ポリマー、樹脂組成物、及び、樹脂膜
CN114450318A (zh) * 2019-09-26 2022-05-06 住友电木株式会社 聚合物、感光性树脂组合物、树脂膜和电子装置
EP4058501A1 (en) 2019-11-15 2022-09-21 Massachusetts Institute of Technology Functional oligomers and functional polymers including hydroxylated polymers and conjugates thereof and uses thereof
DE102020130523B4 (de) 2019-12-31 2023-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur bildung einer fotolackstruktur
US12547075B2 (en) * 2019-12-31 2026-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming photoresist pattern
CN117062852A (zh) 2021-02-01 2023-11-14 麻省理工学院 可再加工的组合物
US20240270898A1 (en) * 2021-06-01 2024-08-15 Massachusetts Institute Of Technology Latent-fluoride containing polymers for triggered degradation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103649220A (zh) * 2011-07-14 2014-03-19 住友电木株式会社 在成像式曝光于光化辐射下之后形成构图层的聚合物及其组合物

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02146045A (ja) * 1988-02-17 1990-06-05 Tosoh Corp フォトレジスト組成物
KR900700923A (ko) 1988-02-17 1990-08-17 야마구찌 도시아끼 포토레지스트 조성물
JP2638887B2 (ja) * 1988-02-26 1997-08-06 東ソー株式会社 感光性組成物
JP2961722B2 (ja) 1991-12-11 1999-10-12 ジェイエスアール株式会社 感放射線性樹脂組成物
KR960009295B1 (ko) * 1991-09-12 1996-07-18 미쓰이세끼유 가가꾸고오교오 가부시끼가이샤 환상올레핀 수지 조성물
JPH0570639A (ja) * 1991-09-12 1993-03-23 Mitsui Petrochem Ind Ltd 環状オレフイン樹脂組成物
US6013413A (en) * 1997-02-28 2000-01-11 Cornell Research Foundation, Inc. Alicyclic nortricyclene polymers and co-polymers
KR100254472B1 (ko) * 1997-11-01 2000-05-01 김영환 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
JP3262108B2 (ja) 1998-09-09 2002-03-04 東レ株式会社 ポジ型感光性樹脂組成物
JP2002201226A (ja) 2000-12-28 2002-07-19 Jsr Corp 共重合体およびそれを用いた感放射線性樹脂組成物
JP3952756B2 (ja) 2001-11-29 2007-08-01 日本ゼオン株式会社 感放射線性樹脂組成物及びその利用
US7799883B2 (en) 2005-02-22 2010-09-21 Promerus Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4666166B2 (ja) * 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
US7745104B2 (en) * 2006-08-10 2010-06-29 Shin-Etsu Chemical Co., Ltd. Bottom resist layer composition and patterning process using the same
US8541523B2 (en) 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP5579553B2 (ja) 2010-09-17 2014-08-27 信越化学工業株式会社 レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
KR101572049B1 (ko) 2012-09-25 2015-11-26 프로메러스, 엘엘씨 사이클로올레핀성 중합체를 함유하는 말레이미드 및 그의 용도
WO2015038412A2 (en) 2013-09-16 2015-03-19 Promerus, Llc Amine treated maleic anhydride polymers with pendent silyl group, compositions and applications thereof
WO2015038411A2 (en) * 2013-09-16 2015-03-19 Promerus, Llc Amine treated maleic anhydride polymers, compositions and applications thereof
CN106068288B (zh) * 2014-03-06 2018-05-01 住友电木株式会社 聚合物、光敏性树脂组合物和电子装置
TWI692674B (zh) * 2015-12-31 2020-05-01 日商住友電木股份有限公司 衍生自降莰二烯和馬來酸酐之聚合物及其用途

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103649220A (zh) * 2011-07-14 2014-03-19 住友电木株式会社 在成像式曝光于光化辐射下之后形成构图层的聚合物及其组合物

Also Published As

Publication number Publication date
US9944730B2 (en) 2018-04-17
US20170190810A1 (en) 2017-07-06
JP6726281B2 (ja) 2020-07-22
US20180044449A1 (en) 2018-02-15
US9834627B2 (en) 2017-12-05
JP2019503415A (ja) 2019-02-07
TWI692674B (zh) 2020-05-01
KR20180082607A (ko) 2018-07-18
KR101930045B1 (ko) 2018-12-17
CN108473749A (zh) 2018-08-31
WO2017117483A1 (en) 2017-07-06
TW201740189A (zh) 2017-11-16

Similar Documents

Publication Publication Date Title
CN108473749B (zh) 衍生自降冰片二烯和马来酸酐的聚合物及其用途
JP5860193B2 (ja) マレイミド含有シクロオレフィンポリマーおよびその利用
TWI411876B (zh) 光敏介電樹脂組成物、由其形成之薄膜、及包括此薄膜之半導體及顯示裝置
CN109313388B (zh) 负型感光性组合物
JP6564065B2 (ja) 永久的な誘電体としてのマレイミド及びシクロオレフィンモノマーのポリマー
TWI672323B (zh) 無氟可光圖案化之含酚官能基之聚合物組成物
US11048168B2 (en) Permanent dielectric compositions containing photoacid generator and base
TWI684826B (zh) 可光成像組成物、硬化產物形成方法、硬化產物及包含該硬化產物的光電子或微電子裝置
JP6959351B2 (ja) 下層膜形成用樹脂材料、レジスト下層膜、レジスト下層膜の製造方法および積層体
US20250250378A1 (en) Cyanonorbornene polymers for oil resistant photoimageable compositions

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20191022

Address after: Tokyo, Japan

Applicant after: Sumitomo Dianwood Co., Ltd.

Address before: Ohio, USA

Applicant before: Promirus Co., Ltd.

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant