KR101930045B1 - 노르보르나디엔 및 말레산 무수물로부터 유래된 중합체 및 그 용도 - Google Patents

노르보르나디엔 및 말레산 무수물로부터 유래된 중합체 및 그 용도 Download PDF

Info

Publication number
KR101930045B1
KR101930045B1 KR1020187018753A KR20187018753A KR101930045B1 KR 101930045 B1 KR101930045 B1 KR 101930045B1 KR 1020187018753 A KR1020187018753 A KR 1020187018753A KR 20187018753 A KR20187018753 A KR 20187018753A KR 101930045 B1 KR101930045 B1 KR 101930045B1
Authority
KR
South Korea
Prior art keywords
alkyl
maleic anhydride
formula
polymer
hept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187018753A
Other languages
English (en)
Korean (ko)
Other versions
KR20180082607A (ko
Inventor
래리 에프. 로도스
프라모드 칸다나라치치
Original Assignee
스미토모 베이클리트 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미토모 베이클리트 컴퍼니 리미티드 filed Critical 스미토모 베이클리트 컴퍼니 리미티드
Publication of KR20180082607A publication Critical patent/KR20180082607A/ko
Application granted granted Critical
Publication of KR101930045B1 publication Critical patent/KR101930045B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/06—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having two or more carbon-to-carbon double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/04—Anhydrides, e.g. cyclic anhydrides
    • C08F22/06—Maleic anhydride
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/02—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F32/06—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having two or more carbon-to-carbon double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L47/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
KR1020187018753A 2015-12-31 2016-12-30 노르보르나디엔 및 말레산 무수물로부터 유래된 중합체 및 그 용도 Active KR101930045B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562273553P 2015-12-31 2015-12-31
US62/273,553 2015-12-31
PCT/US2016/069375 WO2017117483A1 (en) 2015-12-31 2016-12-30 Polymers derived from norbornadiene and maleic anhydride and use thereof

Publications (2)

Publication Number Publication Date
KR20180082607A KR20180082607A (ko) 2018-07-18
KR101930045B1 true KR101930045B1 (ko) 2018-12-17

Family

ID=57985011

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187018753A Active KR101930045B1 (ko) 2015-12-31 2016-12-30 노르보르나디엔 및 말레산 무수물로부터 유래된 중합체 및 그 용도

Country Status (6)

Country Link
US (2) US9834627B2 (https=)
JP (1) JP6726281B2 (https=)
KR (1) KR101930045B1 (https=)
CN (1) CN108473749B (https=)
TW (1) TWI692674B (https=)
WO (1) WO2017117483A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692674B (zh) * 2015-12-31 2020-05-01 日商住友電木股份有限公司 衍生自降莰二烯和馬來酸酐之聚合物及其用途
EP3837266A1 (en) 2018-08-17 2021-06-23 Massachusetts Institute of Technology Degradable polymers of a cyclic silyl ether and uses thereof
JP7322372B2 (ja) * 2018-09-28 2023-08-08 住友ベークライト株式会社 ポリマー、樹脂組成物、及び、樹脂膜
CN114450318A (zh) * 2019-09-26 2022-05-06 住友电木株式会社 聚合物、感光性树脂组合物、树脂膜和电子装置
EP4058501A1 (en) 2019-11-15 2022-09-21 Massachusetts Institute of Technology Functional oligomers and functional polymers including hydroxylated polymers and conjugates thereof and uses thereof
DE102020130523B4 (de) 2019-12-31 2023-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur bildung einer fotolackstruktur
US12547075B2 (en) * 2019-12-31 2026-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming photoresist pattern
CN117062852A (zh) 2021-02-01 2023-11-14 麻省理工学院 可再加工的组合物
US20240270898A1 (en) * 2021-06-01 2024-08-15 Massachusetts Institute Of Technology Latent-fluoride containing polymers for triggered degradation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002201226A (ja) 2000-12-28 2002-07-19 Jsr Corp 共重合体およびそれを用いた感放射線性樹脂組成物
JP2012063653A (ja) 2010-09-17 2012-03-29 Shin Etsu Chem Co Ltd レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
US20150079506A1 (en) * 2013-09-16 2015-03-19 Sumitomo Bakelite Co., Ltd Amine treated maleic anhydride polymers, compositions and applications thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02146045A (ja) * 1988-02-17 1990-06-05 Tosoh Corp フォトレジスト組成物
KR900700923A (ko) 1988-02-17 1990-08-17 야마구찌 도시아끼 포토레지스트 조성물
JP2638887B2 (ja) * 1988-02-26 1997-08-06 東ソー株式会社 感光性組成物
JP2961722B2 (ja) 1991-12-11 1999-10-12 ジェイエスアール株式会社 感放射線性樹脂組成物
KR960009295B1 (ko) * 1991-09-12 1996-07-18 미쓰이세끼유 가가꾸고오교오 가부시끼가이샤 환상올레핀 수지 조성물
JPH0570639A (ja) * 1991-09-12 1993-03-23 Mitsui Petrochem Ind Ltd 環状オレフイン樹脂組成物
US6013413A (en) * 1997-02-28 2000-01-11 Cornell Research Foundation, Inc. Alicyclic nortricyclene polymers and co-polymers
KR100254472B1 (ko) * 1997-11-01 2000-05-01 김영환 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
JP3262108B2 (ja) 1998-09-09 2002-03-04 東レ株式会社 ポジ型感光性樹脂組成物
JP3952756B2 (ja) 2001-11-29 2007-08-01 日本ゼオン株式会社 感放射線性樹脂組成物及びその利用
US7799883B2 (en) 2005-02-22 2010-09-21 Promerus Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4666166B2 (ja) * 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
US7745104B2 (en) * 2006-08-10 2010-06-29 Shin-Etsu Chemical Co., Ltd. Bottom resist layer composition and patterning process using the same
US8541523B2 (en) 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP5728790B2 (ja) * 2011-07-14 2015-06-03 住友ベークライト株式会社 自己現像層形成ポリマーおよびその組成物
KR101572049B1 (ko) 2012-09-25 2015-11-26 프로메러스, 엘엘씨 사이클로올레핀성 중합체를 함유하는 말레이미드 및 그의 용도
WO2015038412A2 (en) 2013-09-16 2015-03-19 Promerus, Llc Amine treated maleic anhydride polymers with pendent silyl group, compositions and applications thereof
CN106068288B (zh) * 2014-03-06 2018-05-01 住友电木株式会社 聚合物、光敏性树脂组合物和电子装置
TWI692674B (zh) * 2015-12-31 2020-05-01 日商住友電木股份有限公司 衍生自降莰二烯和馬來酸酐之聚合物及其用途

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002201226A (ja) 2000-12-28 2002-07-19 Jsr Corp 共重合体およびそれを用いた感放射線性樹脂組成物
JP2012063653A (ja) 2010-09-17 2012-03-29 Shin Etsu Chem Co Ltd レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
US20150079506A1 (en) * 2013-09-16 2015-03-19 Sumitomo Bakelite Co., Ltd Amine treated maleic anhydride polymers, compositions and applications thereof

Also Published As

Publication number Publication date
US9944730B2 (en) 2018-04-17
US20170190810A1 (en) 2017-07-06
JP6726281B2 (ja) 2020-07-22
US20180044449A1 (en) 2018-02-15
US9834627B2 (en) 2017-12-05
JP2019503415A (ja) 2019-02-07
TWI692674B (zh) 2020-05-01
KR20180082607A (ko) 2018-07-18
CN108473749B (zh) 2019-11-26
CN108473749A (zh) 2018-08-31
WO2017117483A1 (en) 2017-07-06
TW201740189A (zh) 2017-11-16

Similar Documents

Publication Publication Date Title
KR101930045B1 (ko) 노르보르나디엔 및 말레산 무수물로부터 유래된 중합체 및 그 용도
KR101572049B1 (ko) 사이클로올레핀성 중합체를 함유하는 말레이미드 및 그의 용도
KR20190037268A (ko) 무수나드산 중합체 및 그로부터 유래한 감광성 조성물
US9291901B2 (en) Amine treated maleic anhydride polymers with pendent silyl group, compositions and applications thereof
US11061328B2 (en) Positive tone photosensitive compositions containing amic acid as latent base catalyst
US20200285151A1 (en) Photosensitive polyimide compositions
KR20190020315A (ko) 네가티브 톤 감광성 조성물
JP6564065B2 (ja) 永久的な誘電体としてのマレイミド及びシクロオレフィンモノマーのポリマー
KR20180059805A (ko) 무불소 광패터닝 페놀관능기 함유 중합체 조성물
US11048168B2 (en) Permanent dielectric compositions containing photoacid generator and base
US20160147145A1 (en) Photoimageable compositions containing oxetane functionality
JP6770071B2 (ja) 光酸発生剤及び塩基を含有する永久誘電体組成物
US20250250378A1 (en) Cyanonorbornene polymers for oil resistant photoimageable compositions

Legal Events

Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 8