CN108440756B - 包含具有硫醇基的反应性添加剂的聚合物复合材料和膜以用于提高量子点分散和阻隔性质 - Google Patents
包含具有硫醇基的反应性添加剂的聚合物复合材料和膜以用于提高量子点分散和阻隔性质 Download PDFInfo
- Publication number
- CN108440756B CN108440756B CN201810117992.4A CN201810117992A CN108440756B CN 108440756 B CN108440756 B CN 108440756B CN 201810117992 A CN201810117992 A CN 201810117992A CN 108440756 B CN108440756 B CN 108440756B
- Authority
- CN
- China
- Prior art keywords
- compound
- polymer composite
- molecular weight
- quantum dots
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 68
- 239000002096 quantum dot Substances 0.000 title claims abstract description 66
- 239000002131 composite material Substances 0.000 title claims abstract description 60
- 125000003396 thiol group Chemical group [H]S* 0.000 title claims abstract description 32
- 239000006185 dispersion Substances 0.000 title abstract description 3
- 230000004888 barrier function Effects 0.000 title description 10
- 239000000654 additive Substances 0.000 title description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 79
- -1 acyclic hydrocarbon Chemical class 0.000 claims abstract description 40
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims abstract description 13
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 11
- 125000003118 aryl group Chemical group 0.000 claims abstract description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 4
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 4
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 229940114072 12-hydroxystearic acid Drugs 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 claims description 4
- JLLYLQLDYORLBB-UHFFFAOYSA-N 5-bromo-n-methylthiophene-2-sulfonamide Chemical compound CNS(=O)(=O)C1=CC=C(Br)S1 JLLYLQLDYORLBB-UHFFFAOYSA-N 0.000 claims description 4
- VEBCLRKUSAGCDF-UHFFFAOYSA-N ac1mi23b Chemical compound C1C2C3C(COC(=O)C=C)CCC3C1C(COC(=O)C=C)C2 VEBCLRKUSAGCDF-UHFFFAOYSA-N 0.000 claims description 4
- 230000002045 lasting effect Effects 0.000 abstract 1
- 239000000178 monomer Substances 0.000 description 19
- 238000006862 quantum yield reaction Methods 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011162 core material Substances 0.000 description 8
- 239000011258 core-shell material Substances 0.000 description 8
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 7
- 235000014113 dietary fatty acids Nutrition 0.000 description 7
- 239000000194 fatty acid Substances 0.000 description 7
- 229930195729 fatty acid Natural products 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000009472 formulation Methods 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 5
- 235000018417 cysteine Nutrition 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011257 shell material Substances 0.000 description 5
- 238000005481 NMR spectroscopy Methods 0.000 description 4
- 235000001014 amino acid Nutrition 0.000 description 4
- 150000001413 amino acids Chemical class 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 239000000539 dimer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 229920003086 cellulose ether Polymers 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229920006037 cross link polymer Polymers 0.000 description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 2
- 150000004665 fatty acids Chemical group 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N monoethyl amine Natural products CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007655 standard test method Methods 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- RHNJVKIVSXGYBD-UHFFFAOYSA-N 10-prop-2-enoyloxydecyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCCCCCOC(=O)C=C RHNJVKIVSXGYBD-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- LVGFPWDANALGOY-UHFFFAOYSA-N 8-methylnonyl prop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C=C LVGFPWDANALGOY-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 1
- OVBJJZOQPCKUOR-UHFFFAOYSA-L EDTA disodium salt dihydrate Chemical compound O.O.[Na+].[Na+].[O-]C(=O)C[NH+](CC([O-])=O)CC[NH+](CC([O-])=O)CC([O-])=O OVBJJZOQPCKUOR-UHFFFAOYSA-L 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- NQTADLQHYWFPDB-UHFFFAOYSA-N N-Hydroxysuccinimide Chemical compound ON1C(=O)CCC1=O NQTADLQHYWFPDB-UHFFFAOYSA-N 0.000 description 1
- 102000035195 Peptidases Human genes 0.000 description 1
- 108091005804 Peptidases Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XJBRSZAYOKVFRH-GRYCIOLGSA-N [(1r,2s,5r)-5-methyl-2-propan-2-ylcyclohexyl] prop-2-enoate Chemical compound CC(C)[C@@H]1CC[C@@H](C)C[C@H]1OC(=O)C=C XJBRSZAYOKVFRH-GRYCIOLGSA-N 0.000 description 1
- NEJNOEFCQDFDQM-UHFFFAOYSA-N [2-ethyl-2-(2-methylprop-2-enoyloxymethyl)hexyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CC)(CCCC)COC(=O)C(C)=C NEJNOEFCQDFDQM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000007824 aliphatic compounds Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000009435 amidation Effects 0.000 description 1
- 238000007112 amidation reaction Methods 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical compound C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000003869 coulometry Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- FWLDHHJLVGRRHD-UHFFFAOYSA-N decyl prop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C=C FWLDHHJLVGRRHD-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- BDOFFEYJSIJAFH-UHFFFAOYSA-K dodecanoate;indium(3+) Chemical compound [In+3].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O BDOFFEYJSIJAFH-UHFFFAOYSA-K 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007755 gap coating Methods 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002707 nanocrystalline material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007539 photo-oxidation reaction Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 229920006260 polyaryletherketone Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920006124 polyolefin elastomer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019833 protease Nutrition 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Chemical group COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XOALFFJGWSCQEO-UHFFFAOYSA-N tridecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCOC(=O)C=C XOALFFJGWSCQEO-UHFFFAOYSA-N 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical class [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
- C08G75/02—Polythioethers
- C08G75/04—Polythioethers from mercapto compounds or metallic derivatives thereof
- C08G75/045—Polythioethers from mercapto compounds or metallic derivatives thereof from mercapto compounds and unsaturated compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/06—Hydrocarbons
- C08F12/08—Styrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/12—Esters of monohydric alcohols or phenols
- C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/38—Esters containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/34—Monomers containing two or more unsaturated aliphatic radicals
- C08F212/36—Divinylbenzene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L35/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L35/02—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
- C08L67/04—Polyesters derived from hydroxycarboxylic acids, e.g. lactones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
- C08K3/105—Compounds containing metals of Groups 1 to 3 or of Groups 11 to 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
- C08K3/11—Compounds containing metals of Groups 4 to 10 or of Groups 14 to 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/32—Phosphorus-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/54—Inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0805—Chalcogenides
- C09K11/0811—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
- Y10S977/816—III-N based compounds, e.g. AlxGayInzN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
- Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
- Y10S977/819—III-As based compounds, e.g. AlxGayInzAs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/952—Display
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Polymerisation Methods In General (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明提供其中分散有量子点的聚合物复合材料,如膜,其中所述聚合物包含(b)含有一到6个硫醇基的第一化合物的聚合单元,所述化合物的分子量为300到20,000,并且具有至少一个具有至少三个碳原子、或优选至少5个碳原子的连续非环烃基链;和(c)第二化合物的聚合单元,所述第二化合物的分子量为100到750并且包含至少两个可聚合乙烯基作为(甲基)丙烯酸酯基的一部分或直接连接到芳香环,并且其中所述第一化合物的所述分子量减所述第二化合物的所述分子量为至少100。所述聚合物复合材料提供更稳定分散并且更持久的量子点复合物以用于例如显示装置。
Description
本发明涉及一种含有量子点(quantum dot)的聚合物复合材料,特别是含有无镉量子点的聚合物复合材料。
半导体量子点(QD)提供显著不同于块体材料的光学吸收和发射(光致发光PL或电致发光EL)特性。随着粒度减小,各可用能级之间的有效能带隙(energy bandgap,Eg)增加并且产生蓝移的PL光谱。相同材料内通过粒度相关的量子限制效应的此类光谱可调谐性提供优于常规块体半导体的关键优势。由于其独特的光学性质,QD在诸多显示和照明应用中引起关注。很多QD具有无机壳,其由较大带隙材料制成以将电子和空穴对限制于核心区域内并且防止任何表面电荷状态。外壳或QD自身随后通过有机配体封端以减少可导致量子产率(QY)降低的外壳俘获状态。QD周围的典型有机配体帮助QD分散于有机/水性溶剂中,且具有相对较长的烷基链,其提供非极性溶剂或单体中的高溶解度。不幸地,在光吸收和/或光转换过程期间QD非常易受光氧化影响。湿度也可有类似影响。QD通常囊封于聚合物基质中以保护它们免受水和氧气的不利影响;然而,聚合物基质应与QD和任何所用配体两者相容。
已知用于形成聚合物基质的单体,如三环癸烷二甲醇二丙烯酸酯或二甲基丙烯酸异冰片酯,具有良好的O2阻隔性质并且又有与QD的不良相容性,产生会引起更低量子产率的QD聚集。
Kang等人(Kang)的美国专利申请案第US 2013/0148057 A号公开液晶显示器(liquid crystal display,LCD)的背光单元,包括发光二极管(light emitting diode,LED)和将从LED中发射的光转换为白光的光转换层。光转换层包含量子点或半导体纳米粒子和聚合物基质。聚合物基质包含具有至少两个末端硫醇基的第一聚合单体和具有至少两个末端不饱和官能团的第二单体的聚合物。然而,Kang光转换层并不提供可接受的氧气渗透性或量子产率。
本发明人致力于提供具有经改良的氧气阻隔和量子产率性质的含有QD的聚合物复合材料以及其膜。
发明内容
本发明提供一种其中分散有量子点的聚合物复合材料,所述聚合物复合材料包含:(a)量子点;(b)第一化合物的聚合单元,所述第一化合物包含至少一个或优选一到6个硫醇基、或优选二到6个硫醇基,并且分子量为300到20,000或优选为300到6000,并且具有至少一个具有至少三个碳原子、或优选至少五个碳原子的连续非环烃基链;和(c)第二化合物的聚合单元,所述第二化合物的分子量为100到750,并且包含至少两个可聚合的乙烯基作为(甲基)丙烯酸酯基部分或直接连接到芳香环,并且其中第一化合物的分子量减第二化合物的分子量为至少100。
根据本发明的聚合物复合材料,(a)量子点不含镉,例如ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、GaN、GaP、GaAs、InP、InAs或其组合。
优选地,本发明的聚合物复合材料中的量子点具有核壳结构,其中壳材料比核材料的带隙更宽并且与核材料晶格失配小。更优选地,此类核壳量子点为不含镉的量子点,如优选为具有含铟的核的量子点,并且如优选为具有III-V纳米粒子核(如GaAs、InP或GaP)和II-VI纳米粒子壳(如ZnS、ZnSe)的量子点。
根据本发明的聚合物复合材料,用于制备聚合单元(b)的第一化合物进一步包含至少一个羟基。
根据本发明的聚合物复合材料,用于制备聚合单元(b)的第一化合物为:N-烷基胺硫醇或含有氨基酸(如半胱氨酸)的硫醇基与C12-C26脂肪族羟基羧酸的一个或多个加合物,如与N-烷基胺硫醇(如N-乙胺硫醇)的低聚(12-羟基硬脂酸)加合物;N-烷基胺硫醇或含有氨基酸的硫醇基与C12-C26脂肪族羧酸或其二聚物的加合物;硫代烷基羧酸(如巯基丙酸)与C12-C26脂肪族二醇或三醇或其二聚物的加合物;或接枝硫醇的化合物,其用例如硫代烷基羧酸与一个或多个(甲基)丙烯酸C4-C16羟烷基酯、或优选一个或多个(甲基)丙烯酸C5-C16羟烷基酯的低聚物的加合物制备。
根据本发明的聚合物复合材料,用于制备聚合单元(b)的第一化合物优选为具有末端硫醇基的羟基脂肪酸酰胺、具有末端硫醇基的低聚(羟基脂肪酸)酰胺,其中脂肪酸链在位于距脂肪酸链末端三个或更多个、或优选5到6个碳处含有羟基,如12-羟基硬脂酸的硫醇乙基酰胺或低聚(12-羟基硬脂酸)的硫醇乙基酰胺。
根据本发明的聚合物复合材料,用于制备聚合单元(c)的第二化合物包含从以下中选出的单体:(甲基)丙烯酸酯基连接到芳香环或环脂肪族基团的单体,如三环癸烷二甲醇二丙烯酸酯或二甲基丙烯酸异冰片酯,乙烯基直接连接到芳香环或环脂肪族基团的单体,如二乙烯基苯,或其混合物。
根据本发明的聚合物复合材料,其中用于制备聚合单元(c)的第二化合物从以下中选出:三环癸烷二甲醇二丙烯酸酯、二甲基丙烯酸异冰片酯、二乙烯基苯或其混合物。
根据本发明的聚合物复合材料,所有量按聚合物复合材料中的总固体计,所述聚合物复合材料包含:(a)0.001到5重量%、或优选0.01到5重量%、或更优选0.1到5重量%的量子点,(b)0.5到40重量%、或优选0.5到10重量%的第一化合物的聚合单元,和(c)55到95重量%、或55到94.999重量%、或55到94.99重量%、或55到94.9重量%、或优选65到92重量%的第二化合物的聚合单元。
根据本发明的聚合物复合材料,所述聚合物复合材料优选包含膜。
根据本发明的膜聚合物复合材料,所述聚合物复合材料包含一部分多层膜、层合物或在聚合物复合材料膜的每一侧上也包含外层的总成。优选地,外层为隔氧层,例如聚对苯二甲酸乙二醇酯(polyethylene terephthalate,PET),其也抑制湿气通过。
除非另外规定,否则百分比是重量百分比(重量%)并且温度以℃为单位。
除非另外规定,否则操作和实例在室温(20-25℃)下进行。
除非另外规定,否则沸点在大气压(大约101kPa)下测量。
除非另外指示,否则含有圆括号的任何术语都可以替代地指全部术语,如同圆括号不存在和术语没有圆括号一样,以及每个替代方案的组合。因此,术语“(甲基)丙烯酸酯”意谓丙烯酸酯、甲基丙烯酸酯或其混合物。
所有范围均具有包括性和可组合性。举例来说,术语“50到3000cp或100cp或更大的范围”将包括50到100cp、50到3000cp以及100到3000cp中的每一个。
如本文所使用,术语“ASTM”是指宾夕法尼亚州西康舍霍肯ASTM国际性组织(ASTMInternational,West Conshohocken,PA)的出版物。
如本文所使用,术语“带隙”是指如由紫外光电子光谱法(ultravioletphotoelectron spectroscopy,UPS)所测量的给定量子点或其层中的最高占用分子轨域(highest occupied molecular orbital,HOMO)与最低未占用分子轨域(lowestunoccupied molecular orbital,LUMO)之间的能隙。
如本文中所使用,术语“分子量”以道尔顿为单位测量,并且表示单体化合物的原子量的总和;对于低聚物、聚合化合物和其混合物,“分子量”表示重均分子量(weight-average molecular weight,Mw),如由凝胶渗透色谱法针对丙烯酸单体的聚(甲基丙烯酸甲酯)、乙烯基单体的聚苯乙烯的聚合物标准物所测定;或对于用于制备聚合单元(b)的第一化合物,“分子量”通过核磁共振(nuclear magnetic resonance,NMR)光谱法测定。
如本文中所使用,术语“低聚物”意指具有两个或更多个重复单元、例如两个到一百个重复单元的化合物。如本文中所使用,术语“低聚物”可包括聚合物或与聚合物重叠。
如本文中所使用,术语“低聚(羟基脂肪酸)”是指通过由使羟基脂肪酸中的羟基与羧基反应而形成的酯连接的两个或更多个羟基脂肪酸分子的低聚酯。
如本文中所使用,术语“可靠的”或“可靠性”是指在例如60℃的高温下老化或使用例如30天或60天的较长时间后保持其量子产率的聚合物复合材料的品质。
根据本发明,聚合物复合材料含有充分并且稳定地分散于其中的量子点(QD)。聚合物复合材料包含由具有一个或多个硫醇基的第一化合物和丙烯酸或乙烯基单体的第二化合物的单体形成的聚合物,所述第二化合物具有两个或更多个可聚合的烯属不饱和基团(ethylenically unsaturated group),如乙烯基或丙烯酸酯基。没有第一化合物的聚合物复合材料可具有良好的O2阻隔性质但与QD的相容性不良。聚合物与QD之间不良的相容性导致QD聚集,这使得在与天然溶剂或非极性单体中的QD相比时或在与具有相同厚度并且具有相同量的相同QD而无聚合的第一化合物的相同聚合物复合材料相比时,复合材料的量子产率(QY)或光致发光更低并且峰值波长红移。第一化合物与第二化合物单体并且与QD的相容性非常好,由此使得QY能够通过使聚合物复合材料中的QD聚集降到最低而提高。另外,第一化合物具有一个或多个与丙烯酸和乙烯基反应的硫醇基以在固化过程期间形成交联聚合物树脂。因为此为一种组分聚合物,所以聚合的第一化合物与聚合的第二化合物之间不存在相分离。因为QD均匀分散于固化的聚合物复合材料膜内部,膜随时间具有较短红移并且保持更佳的量子产率(QY)。另外,交联聚合物复合材料比多组分聚合物复合材料具有更高膜密度、更佳可靠性和氧气阻隔性质。
量子点为此项技术中所熟知,参见例如,Dubrow等人的美国专利公开案第US2012/0113672A号。优选地,本发明的聚合物复合材料中的量子点为不含镉的量子点,或更优选为不含镉的核-壳型量子点。
合适的量子点和核-壳型量子点可包括那些任何以下中所公开的任一者:Mushtaq等人的美国专利第7,588,828B2号;Guo等人的美国专利公开案第2015/0236195A1号中所公开的量子点,例如,含有富含铟的InP核的量子点,如由使InP与羧酸铟(即,羧酸铟(III))(如月桂酸铟)接触形成的那些;Mingjun等人的美国专利公开案第US2015/0166342A1号中所公开的那些;第III-IV族半导体纳米结构,如Scher等人的美国专利案第7557028B1号中、Scher等人的美国专利案第8062967B1号中、Scher等人的美国专利案第US8884273 B1号中、或Scher等人的美国专利案第US9469538 B1号中;具有含第IIIA族和第VA族元素的核的纳米晶体,如Clough等人的美国专利案第9136428B2号中;Breen等人的美国专利案第US9212056 B2号中所公开的纳米粒子;或Bawendi等人的US6322901 B1中所公开的纳米晶材料。
不含镉的量子点材料的可接受效率(PLQY)高于40%、或优选高于60%、或更优选75%或更高,如75%到95%。
优选地,第一化合物(b)的分子量为300到20,000,优选是至少400,优选是至少500,优选是至少600,优选是至少700,优选是至少800,优选是至少1,000;优选不超过15,000,优选不超过10,000,优选不超过8,000,优选不超过6,000,优选不超过5,000,优选不超过3,000。
合适的第一化合物可包括例如,N-烷基胺硫醇与C12-C26脂肪族羟基羧酸或含有氨基酸(如半胱氨酸)的硫醇基的单体或低聚物加合物,如与N-烷基胺硫醇(如N-乙胺硫醇)的低聚(12-羟基硬脂酸)加合物;N-烷基胺硫醇或含有氨基酸的硫醇基与C12-C26脂肪族羧酸的加合物;硫代烷基羧酸(如巯基丙酸)与C12-C26脂肪族二醇(由此含有两个硫醇基)、与C12-C26脂肪族三醇(由此含有三个硫醇基)或与C12-C26脂肪族三醇的二聚物(由此含有四个硫醇基)中的任一者的加合物。
当用于制备聚合单元(b)的第一化合物为其中各重复单元含有硫醇基的低聚物,如硫代烷基羧酸与(甲基)丙烯酸C4-C16羟烷基酯低聚物的加合物时,第一化合物中硫醇基的数目为低聚物分布中的单体的重复单元的平均数目。
当用于制备聚合单元(b)的第一化合物为通过将含有化合物的硫醇基加合到分子上制备的单体时,硫醇基的数目通过分子上加合位点的数目测定。举例而言,硫代烷基羧酸与C12-C26脂肪族二醇的加合物具有两个硫醇基;并且硫代烷基羧酸与C12-C26脂肪族三醇的加合物具有三个硫醇基。
当用于制备聚合单元的第一化合物包含接枝到第一化合物上或化学连接到第一化合物中(如通过酰胺化、肽化或酯化)的硫醇基时,第一化合物中硫醇基的数目为如通过核磁共振(NMR)光谱法测定的数量。
用于制备聚合单元(b)的第一化合物具有至少一个具有至少三个碳原子或优选至少五个碳原子的连续非环烃基链,即,具有至少五个亚甲基、烯烃碳或其组合并且无杂原子的直链或分支链(优选直链)。优选地,连续非环烃基链具有至少六个碳原子,优选是至少七个,优选是至少八个;优选不超过十五个,优选不超过十四个,优选不超过十三个。更优选地,连续非环烃基链仅含有亚甲基。
优选地,用于制备聚合单元(b)的第一化合物仅有碳原子、氢原子、氧原子、硫原子和氮原子。
更优选地,用于制备聚合单元(b)的第一化合物仅有碳原子、氢原子、氧原子和硫原子。
优选地,用于制备聚合单元(b)的第一化合物为脂肪族化合物。
优选地,用于制备聚合单元(c)的第二化合物的分子量为至少150,优选是至少200,优选是至少250;优选不超过650,优选不超过500,优选不超过400,优选不超过350。
优选地,第一化合物的分子量减第二化合物的分子量为至少300,优选是至少500,优选是至少700,优选是至少900,优选是至少1,100;优选不超过19,900,优选不超过15,000,优选不超过10,000,优选不超过5,000。
当本发明的聚合物复合材料包含超过一种第一化合物和/或超过一种第二化合物时,分子量差别上的前述限制仅适用于第一化合物和第二化合物最普遍的组合,按复合材料的总固体重量计,所述组合的量总计为至少50重量%,优选为至少75重量%。
当在用于制备聚合单元(c)的第二化合物中时,可聚合的乙烯基连接到芳香环(例如,苯环、萘环或吡啶环),芳香环优选具有三到二十个碳原子,或优选五到十五个碳原子。优选地,芳香环不含杂原子并且具有六到十五个碳原子,优选为六到十二个碳原子。
优选地,用于制备聚合单元(c)的第二化合物具有二到六个可聚合的乙烯基,或更优选不超过四个。
优选地,第二化合物中可聚合的乙烯基为(甲基)丙烯酸酯基(CH2=C(R)C(O)O-,其中R为H或CH3;也称为(甲基)丙烯酰氧基)。
优选地,第二化合物仅有碳原子、氢原子、氧原子和氮原子;或更优选仅有碳原子、氢原子和氧原子。
优选地,第二化合物具有(甲基)丙烯酸酯基,或第二化合物为二乙烯基苯(divinylbenzene,DVB)。
尤其优选的第二化合物包括三环[5.2.1.02,6]癸烷二甲醇二丙烯酸酯、双酚A二甲基丙烯酸酯、2-丁基-2-乙基-1,3-丙二醇二甲基丙烯酸酯、1,10--双(丙烯酰氧基)癸烷和
优选地,聚合物复合材料进一步包含第三化合物的聚合单元(d),所述第三化合物具有一个(甲基)丙烯酸酯基并且分子量为100到270;优选是至少140,优选是至少160;优选不超过250,优选不超过230。优选地,第三化合物为脂肪族或环脂族单体,如丙烯酸异冰片酯(IBOA)。
尤其优选的第三化合物包括丙烯酸异冰片酯、丙烯酸3,5,5-三甲基己酯、丙烯酸十二烷酯、丙烯酸癸酯、丙烯酸十三烷酯、丙烯酸异癸酯、丙烯酸L-薄荷酯、丙烯酸三环[5.2.1.02,6]癸基甲酯、甲基丙烯酸3,3,5-三甲基环己酯和甲基丙烯酸3,3,5-三甲基环己酯。
优选地,本发明的聚合物复合材料为一部分多层膜、层合物或在聚合物复合材料膜的每一侧上也包含外层的总成。优选地,外层为隔氧层,其也抑制湿气通过。优选地,外层包含聚合物复合材料,优选地包含聚对苯二甲酸乙二醇酯(PET)、聚芳基醚酮、聚酰亚胺、聚烯烃、聚碳酸酯、聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯或其组合的聚合物复合材料。优选地,外层进一步包含氧化物或氮化物,优选为氧化硅、二氧化钛、氧化铝、氮化硅或其组合。优选地,将氧化物或氮化物涂布于面朝QD层的聚合物复合材料的表面上。优选地,各外层包含厚度为25到150微米(优选为50到100微米)的聚合物复合材料和厚度为10到100nm(优选为30到70nm)的氧化物层/氮化物层。
根据本发明,多层膜、层合物或总成的外层优选包含至少两个聚合物复合材料层和/或至少两个氧化物层/氮化物层。在本发明的任一多层膜中,不同层可具有不同的复合物。优选地,外层的氧气透过率非常低(oxygen transmission rate,OTR,<10-1cc/m2/天)并且水蒸气透过率非常低(water vapor transmission rate,WVTR,<10-2g/m2/天)。
优选地,外层中聚合物复合材料的Tg为60到200℃;或更优选为至少90℃,或最优选为至少100℃。
优选地,根据本发明的聚合物复合材料的厚度范围为20到500微米,优选是至少50微米,优选是至少70微米,优选是至少80微米,优选是至少90微米;优选不超过400微米,优选不超过300微米,优选不超过250微米,优选不超过200微米,优选不超过160微米。优选地,各外层的厚度是20到100微米,优选为25到75微米。
优选地,本发明的聚合物复合材料通过树脂的自由基聚合制备,所述树脂通过使第一化合物、第二化合物、任何其它单体、一个或多个QD和任何任选添加剂混合来制备。优选地,树脂在固化之前通过典型方法(例如旋转涂布、槽模涂布、凹版印刷、喷墨和喷涂)涂布于第一外层上。优选地,固化通过将树脂曝露于紫外光或热量、优选为紫外光、优选为UVA范围内的紫外光而引发。
优选地,本发明的聚合物复合材料包含0.01到5重量%、优选是至少0.03重量%、优选是至少0.05重量%、优选不超过4重量%、或优选不超过3重量%、或更优选不超过2重量%的量子点。优选地,量子点包含CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、GaN、GaP、GaAs、InP、InAs或其组合。优选地,量子点不含镉。更优选地,量子点为核-壳型量子点,如核-壳型不含镉的量子点,尤其为含有含铟的核的核-壳型量子点。
本发明的量子点优选包含非极性配体。优选地,量子点无机部分周围的配体具有非极性组分,如脂肪族烃基。优选的配体包括例如三辛基氧化膦、十二硫醇和脂肪酸盐(例如,硬脂酸盐、油酸盐)。
可并入本发明的聚合物复合材料中的其它添加剂包括用于提高光提取的紫外(UV)稳定剂、抗氧化剂、散射剂和用于增加黏度的增稠剂(例如,丙烯酸氨基甲酸酯低聚物)。
优选的增稠剂包括丙烯酸氨基甲酸酯、纤维素醚、纤维素丙烯酸酯、聚苯乙烯聚合物、聚苯乙烯嵌段共聚物、丙烯酸类树脂和聚烯烃弹性体。优选地,聚苯乙烯、丙烯酸和聚烯烃增稠剂的Mw的范围为50,000到400,000、优选为100,000到200,000。优选地,纤维素醚的Mw的范围为1,000到100,000。
丙烯酸氨基甲酸酯低聚物在其含有的丙烯酸酯基之间可具有聚酯、聚醚、聚丁二烯或聚己内酯骨架。其可具有双官能、三官能、六官能反应性。此类低聚物的黏度在50℃下可以在1000到200,000cP的范围内。对于非极性配体QD,优选为聚丁二烯丙烯酸氨基甲酸酯低聚物。
聚合物复合材料的优选形式包括例如复合材料、珠粒、条带、杆、方块和板。聚合物复合材料适用于多种应用,包括例如显示、照明和医疗应用。优选的显示应用包括公众信息显示器、标牌、电视、监视器、移动电话、平板计算机、膝上型计算机、汽车和其它仪表盘以及手表。
实例:以下实例说明本发明。除非另外指示,否则所有温度单位为室温并且所有压力单位为标准气压或101kPa。
使用以下测试方法:
所指示的聚合薄膜的O 2渗透性(cc/m/天/atm)使用Mocon OX-TRAN型号2/21装置(Mocon,Inc.,Minneapolis,MN)测量。在23℃下使用3%O2和97%N2的测试气体在ASTM方法D3985(《使用库仑感应器通过塑料膜和薄片的氧气透过率的标准测试方法(Standard TestMethod for Oxygen Gas Transmission Rate through a Plastic Film and SheetingUsing a Coulometric Sensor)》,1981年1月30日)中概述方法细节。测量值取自以下文所公开的方式制备并且具有10重量%负载量的所指示的第一化合物的膜。
薄膜厚度通过用测微计测量固化膜并且随后减去任何阻隔膜厚度的厚度来测定。
光致发光量子产率(PLQY)使用450nm激发LED光源和Hamamatsu AbsoluteTM PL量子产率光谱仪(Hamamatsu Photonics KK,Shizuoka,Japan)用常规累计球来测量。对于每一报导实例,总共三(3)个测量值取自每一分析物衬底中三(3)个随机选择的点,并且所指示的PLQY表示所得测量值的平均值。
峰值发射波长(peakemissionwavelength,PWL)使用Hamamatsu累计球测定;对于以下实例中的绿色QD,目标波长为520到540nm;对于红色QD,目标波长为620到640nm。
实例中所用缩写:
OHS为低聚(12-羟基硬脂酸),Mw=1,500;OHS-SH为含有单个硫醇基的低聚(12-羟基硬脂酸),Mw=1,500;C为半胱氨酸;IBOA为丙烯酸异冰片酯;SR833为三环[5.2.1.02,6]癸烷二甲醇二丙烯酸酯;I-819和I-651为IRGACURE光敏聚合引发剂(BASF AG,Leverkusen,DE);FinexTM氧化锌粒子(Sakai Chemical Industry co.,LTD.,Japan);并且CFQD表示不含镉的量子点。绿色CFQD包含具有含铟的核的核-壳型QD,并且呈现73.9%QY(PLQY)、44.1nmFWHM和534.4nm PWL(在吸光率=0.3下)。所有量子点进一步包含非极性配体。
具有一个羧酸基和一个羟基的OHS通过借助肽反应并入半胱氨酸的硫醇基来修饰。为制备OHS-SH,在N2氛围下于40mL无水甲苯中将OHS(9.115g,6.2mmol)和N-羟基丁二酰亚胺(NHS,1.8g,15.5mmol,2.5摩尔当量)混合在一起。使用等压加料漏斗缓慢添加乙二胺四乙酸二钠二水合物(EDTA二钠盐,3g,15.5mmol,2.5摩尔当量)于二甲基甲酰胺(dimethylformamide,DMF)(60mL)中的溶液。将溶液维持在20℃下24小时以完成所有羧基的活化。将3.8g半胱氨酸(31mmol,5摩尔当量)溶解于无水DMF(120ml)中并且随后与三甲胺(1.6g,15.5mmol,2.5摩尔当量)混合。在N2下将所得混合物缓慢装入NHS-活化的聚合物溶液中并且再搅拌24小时。随后去除DMF,并且将最终产物用甲苯萃取,并且用饱和NaCl溶液洗涤。最终,在N2吹扫下去除甲苯,并且将产物在真空烘箱中于室温下干燥过夜。
实例1:所有所指示的聚合物复合材料为通过在两个i组分PET阻隔膜之间层叠所指示的树脂配制物制备的膜。将大约2mL树脂分配于底部膜上并且用间隙为250到300(10密耳-12密耳)的间隙涂布棒向下拉,以确保所需膜厚度。所有配制物在500mJ/cm2UV固化强度下使用DRS-10/12QNH(Fusion UV Systems,Inc.,Gaithersburg,MD)进行固化。
配制物示于下表1中。此类配制物通过以下制得:将所指示的第二化合物单体与光引发剂掺合在一起,随后使第一化合物或不含硫醇基的比较化合物与第二化合物单体混合,并且将所得混合物加热到50℃维持15分钟。随后将第二化合物单体IBOA(丙烯酸异冰片酯)与所指示的QD掺合成混合物。如先前段落中所公开,使混合物形成或倾入膜中,并且随后在UV光下固化约3s。量子产率结果展示于下表2中。
实例3和比较实例3A:在各实例中,针对使用下表1中的配制物并且以上文中实例1中所公开的方式制备的两个膜中的每一个测定氧气渗透性,但膜用10重量%负载量的第一化合物或所指示的比较化合物配制。所报导的结果为两个膜的平均值。氧气渗透性结果展示于下表3中。
表1:配制物
*-表示比较实例。
表2:量子产率结果
*-表示比较实例。
如上表2中所展示,实例2中本发明聚合物膜的量子产率优于对照组。峰值波长在实例2和1A中类似,表明本发明的复合物中合理的低红移。此外,本发明实例2的膜的峰值吸收率优于比较实例1A的膜的峰值吸收率,表明QD在实例2中比实例1B中分散地更好。
表3:氧气渗透性
*-表示比较实例。
如上表3中所展示,根据本发明制备的膜的氧气渗透性显著低于具有羟基脂肪酸第一化合物而无硫醇基的相同复合物的膜。结果表明QD复合物良好分散于固化聚合物复合材料中,并且比比较实例3A的复合物更加可靠。
Claims (3)
1.一种其中分散有量子点的聚合物复合材料,所述聚合物复合材料包含:(a)量子点;(b)第一化合物的聚合单元,所述第一化合物包含一到6个硫醇基,并且分子量为300到20,000,并且具有至少一个具有至少三个碳原子的连续非环烃基链;和(c)第二化合物的聚合单元,所述第二化合物的分子量为100到750,并且包含至少两个可聚合乙烯基作为(甲基)丙烯酸酯基的一部分或直接连接到芳香环,并且其中所述第一化合物的所述分子量减所述第二化合物的所述分子量为至少100;其中用于制备所述聚合单元(b)的所述第一化合物还包含至少一个羟基;其中用于制备所述聚合单元(b)的所述第一化合物为12-羟基硬脂酸的硫醇乙基酰胺或低聚(12-羟基硬脂酸)的硫醇乙基酰胺;其中用于制备所述聚合单元(c)的所述第二化合物从以下中选出:三环癸烷二甲醇二丙烯酸酯、二甲基丙烯酸异冰片酯或其混合物。
2.根据权利要求1所述的聚合物复合材料,其中所述(a)量子点为不含镉的量子点。
3.根据权利要求1所述的聚合物复合材料,其中所述聚合物复合材料包含(a)0.001到5重量%的量子点,(b)0.5到40重量%的所述第一化合物的聚合单元,和(c)55到94.999重量%的所述第二化合物的聚合单元。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762459904P | 2017-02-16 | 2017-02-16 | |
US62/459904 | 2017-02-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108440756A CN108440756A (zh) | 2018-08-24 |
CN108440756B true CN108440756B (zh) | 2023-04-28 |
Family
ID=61731349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810117992.4A Active CN108440756B (zh) | 2017-02-16 | 2018-02-06 | 包含具有硫醇基的反应性添加剂的聚合物复合材料和膜以用于提高量子点分散和阻隔性质 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10508232B2 (zh) |
JP (1) | JP7274260B2 (zh) |
KR (1) | KR102461533B1 (zh) |
CN (1) | CN108440756B (zh) |
DE (1) | DE102018102712A1 (zh) |
GB (1) | GB2562339B (zh) |
TW (1) | TWI782946B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016020630A2 (en) | 2014-08-08 | 2016-02-11 | Milan Momcilo Popovich | Waveguide laser illuminator incorporating a despeckler |
WO2016042283A1 (en) | 2014-09-19 | 2016-03-24 | Milan Momcilo Popovich | Method and apparatus for generating input images for holographic waveguide displays |
CN107873086B (zh) | 2015-01-12 | 2020-03-20 | 迪吉伦斯公司 | 环境隔离的波导显示器 |
WO2017060665A1 (en) | 2015-10-05 | 2017-04-13 | Milan Momcilo Popovich | Waveguide display |
EP3924759A4 (en) | 2019-02-15 | 2022-12-28 | Digilens Inc. | METHODS AND APPARATUS FOR MAKING A HOLOGRAPHIC WAVEGUIDE DISPLAY WITH INTEGRATED GRIDINGS |
US10826011B1 (en) * | 2019-07-23 | 2020-11-03 | Sharp Kabushiki Kaisha | QLED fabricated by patterning with phase separated emissive layer |
EP4022370A4 (en) * | 2019-08-29 | 2023-08-30 | Digilens Inc. | VACUUM BRAGG GRATINGS AND METHODS OF MANUFACTURING |
US11866625B2 (en) | 2020-08-20 | 2024-01-09 | Samsung Sdi Co., Ltd. | Curable composition, cured layer using the same, and display device including cured layer |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US7917298B1 (en) * | 2003-04-17 | 2011-03-29 | Nanosys, Inc. | Nanocrystal taggants |
US7588828B2 (en) | 2004-04-30 | 2009-09-15 | Nanoco Technologies Limited | Preparation of nanoparticle materials |
US7557028B1 (en) | 2004-07-28 | 2009-07-07 | Nanosys, Inc. | Process for group III-V semiconductor nanostructure synthesis and compositions made using same |
WO2006027956A1 (ja) * | 2004-09-08 | 2006-03-16 | Kaneka Corporation | 光学材料用樹脂組成物 |
US9212056B2 (en) | 2006-06-02 | 2015-12-15 | Qd Vision, Inc. | Nanoparticle including multi-functional ligand and method |
WO2008133660A2 (en) | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
EP2213694B9 (en) * | 2007-09-04 | 2013-10-09 | Keio University | 12-hydroxystearic acid copolymer and method for producing the same |
WO2010126606A2 (en) | 2009-05-01 | 2010-11-04 | Nanosys, Inc. | Functionalized matrixes for dispersion of nanostructures |
GB0916699D0 (en) | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
EP3839335A1 (en) | 2010-11-10 | 2021-06-23 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
CN102618035B (zh) | 2011-01-26 | 2013-10-16 | 中国科学院理化技术研究所 | 可发射白色荧光的CdSe量子点硅树脂复合材料及制法 |
US9085728B2 (en) | 2011-01-28 | 2015-07-21 | Showa Denko K.K. | Composition containing quantum dot fluorescent body, molded body of quantum dot fluorescent body dispersion resin, structure containing quantum dot fluorescent body, light-emitting device, electronic apparatus, mechanical device, and method for producing molded body of quantum dot fluorescent body dispersion resin |
KR101575139B1 (ko) | 2011-12-09 | 2015-12-08 | 삼성전자주식회사 | 백라이트 유닛 및 이를 포함하는 액정 디스플레이 장치 |
TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
CN104937729B (zh) | 2013-01-21 | 2017-09-22 | 3M创新有限公司 | 量子点膜 |
EP2991824A4 (en) * | 2013-05-02 | 2016-12-28 | Tera-Barrier Films Pte Ltd | CAPACITATION BARRIER STACKS WITH DENDRIMER-CAPTIVATED NANOPARTICLES |
TWI606252B (zh) | 2013-08-14 | 2017-11-21 | 納諾柯技術有限公司 | 使用多相樹脂的量子點薄膜及其製備方法 |
KR102223504B1 (ko) | 2013-09-25 | 2021-03-04 | 삼성전자주식회사 | 양자점-수지 나노복합체 및 그 제조 방법 |
KR101546938B1 (ko) * | 2013-10-08 | 2015-08-24 | 삼성전자주식회사 | 나노 결정 폴리머 복합체 및 그 제조 방법 |
US9778510B2 (en) * | 2013-10-08 | 2017-10-03 | Samsung Electronics Co., Ltd. | Nanocrystal polymer composites and production methods thereof |
US9708532B2 (en) | 2014-03-28 | 2017-07-18 | Nanoco Technologies Ltd. | Quantum dot compositions |
CN105315621A (zh) * | 2014-07-10 | 2016-02-10 | Tcl集团股份有限公司 | 一种量子点/环氧树脂微粒及其制备方法及量子点光学膜和背光模组 |
KR102282214B1 (ko) * | 2014-08-01 | 2021-07-26 | 삼성전자주식회사 | 가스 배리어성 점착 시트의 점착층용 조성물, 상기 조성물로부터 제조되는 가스 배리어성 점착 시트, 상기 가스 배리어성 점착 시트가 구비된 광학시트 |
KR102342178B1 (ko) * | 2014-09-05 | 2021-12-23 | 스미또모 가가꾸 가부시키가이샤 | 경화성 조성물 |
WO2016088646A1 (ja) * | 2014-12-04 | 2016-06-09 | 昭和電工株式会社 | 半導体ナノ粒子含有硬化性組成物、硬化物、光学材料および電子材料 |
EP3070109B1 (en) * | 2015-03-16 | 2018-12-05 | Rohm and Haas Electronic Materials LLC | Multilayer polymer composite for encapsulating quantum dots |
KR101829746B1 (ko) * | 2015-06-02 | 2018-03-29 | 삼성에스디아이 주식회사 | 양자점, 이를 포함하는 조성물 및 양자점의 제조방법 |
JP2017078120A (ja) * | 2015-10-20 | 2017-04-27 | 富士フイルム株式会社 | 重合性組成物、重合物、波長変換部材、バックライトユニット、および液晶表示装置 |
CN105504120B (zh) * | 2015-11-30 | 2018-09-21 | 东莞职业技术学院 | 一种双酚芴类丙烯酸树脂及其制备方法、量子点-彩色光敏树脂组合物及其制备方法和应用 |
TWI736583B (zh) * | 2016-03-02 | 2021-08-21 | 美商羅門哈斯電子材料有限公司 | 含有量子點之聚合物複合物 |
TWI796290B (zh) * | 2016-04-12 | 2023-03-21 | 美商羅門哈斯電子材料有限公司 | 聚合物複合物及其製造方法 |
EP3239197B1 (en) * | 2016-04-28 | 2019-01-23 | Samsung Electronics Co., Ltd | Layered structures and quantum dot sheets and electronic devices including the same |
US10472563B2 (en) * | 2017-02-16 | 2019-11-12 | Rohm And Haas Electronic Materials Llc | Methods for making improved quantum dot resin formulations |
US10961448B2 (en) * | 2017-06-05 | 2021-03-30 | Nanosys, Inc. | Acid stabilization of quantum dot-resin concentrates and premixes |
-
2018
- 2018-01-26 US US15/880,860 patent/US10508232B2/en active Active
- 2018-01-31 TW TW107103353A patent/TWI782946B/zh active
- 2018-02-06 JP JP2018019188A patent/JP7274260B2/ja active Active
- 2018-02-06 CN CN201810117992.4A patent/CN108440756B/zh active Active
- 2018-02-07 KR KR1020180014956A patent/KR102461533B1/ko active IP Right Grant
- 2018-02-07 DE DE102018102712.5A patent/DE102018102712A1/de active Pending
- 2018-02-14 GB GB1802441.4A patent/GB2562339B/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20180094787A (ko) | 2018-08-24 |
CN108440756A (zh) | 2018-08-24 |
US10508232B2 (en) | 2019-12-17 |
TWI782946B (zh) | 2022-11-11 |
US20180265774A1 (en) | 2018-09-20 |
JP7274260B2 (ja) | 2023-05-16 |
DE102018102712A1 (de) | 2018-08-16 |
GB201802441D0 (en) | 2018-03-28 |
KR102461533B1 (ko) | 2022-10-31 |
GB2562339A8 (en) | 2018-12-19 |
GB2562339A (en) | 2018-11-14 |
JP2018131608A (ja) | 2018-08-23 |
TW201831585A (zh) | 2018-09-01 |
GB2562339B (en) | 2022-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108440756B (zh) | 包含具有硫醇基的反应性添加剂的聚合物复合材料和膜以用于提高量子点分散和阻隔性质 | |
CN112424268B (zh) | 量子点膜的制备方法、由此制备的量子点膜及包括该量子点膜的波长转换片和显示器 | |
CN106164219B (zh) | 包含硫醚配体的复合纳米粒子 | |
EP3350284B1 (en) | Additive stabilized composite nanoparticles | |
US20120267616A1 (en) | Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method | |
CN108440707B (zh) | 制备改进的量子点树脂配制物的方法 | |
US10836960B2 (en) | Additive stabilized composite nanoparticles | |
US10759991B2 (en) | Copolymeric stabilizing carrier fluid for nanoparticles | |
CN113943410B (zh) | 量子点薄膜及其制备方法和量子点发光二极管 | |
KR20230074177A (ko) | 펜던트 가용화 모이어티를 갖는 열적으로 안정된 폴리티올 리간드 | |
CN108699196B (zh) | 含有量子点的聚合物复合材料 | |
WO2019034380A1 (en) | UV CURABLE ACRYLATE COMPOSITIONS FOR NANOCRYSTALLINE MIXTURE | |
US20200115630A1 (en) | Additive stabilized composite nanoparticles | |
KR20210041917A (ko) | 양자점, 이를 포함하는 표시장치 및 그 표시장치의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |