CN108417627A - 一种用于制备GaN基高频微波器件的方法 - Google Patents
一种用于制备GaN基高频微波器件的方法 Download PDFInfo
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- CN108417627A CN108417627A CN201810140968.2A CN201810140968A CN108417627A CN 108417627 A CN108417627 A CN 108417627A CN 201810140968 A CN201810140968 A CN 201810140968A CN 108417627 A CN108417627 A CN 108417627A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000004888 barrier function Effects 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 238000012546 transfer Methods 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 230000006911 nucleation Effects 0.000 claims abstract description 3
- 238000010899 nucleation Methods 0.000 claims abstract description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 70
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 54
- 229910017083 AlN Inorganic materials 0.000 claims description 40
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 40
- 238000005516 engineering process Methods 0.000 claims description 28
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 12
- 238000005036 potential barrier Methods 0.000 claims description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 125000004429 atom Chemical group 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229940090044 injection Drugs 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
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CN201810140968.2A CN108417627B (zh) | 2018-02-11 | 2018-02-11 | 一种用于制备GaN基高频微波器件的方法 |
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CN201810140968.2A CN108417627B (zh) | 2018-02-11 | 2018-02-11 | 一种用于制备GaN基高频微波器件的方法 |
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CN108417627B CN108417627B (zh) | 2024-06-18 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109301027A (zh) * | 2018-08-20 | 2019-02-01 | 西安电子科技大学 | 基于非极性InAlN/GaN异质结构的辐照探测器及其制备方法 |
CN111129111A (zh) * | 2019-12-10 | 2020-05-08 | 深圳市汇芯通信技术有限公司 | 半导体器件及其制作方法和集成电路 |
CN111293037A (zh) * | 2020-02-17 | 2020-06-16 | 启迪新材料(芜湖)有限公司 | 一种P型SiC外延及其生长方法 |
CN112466925A (zh) * | 2020-10-22 | 2021-03-09 | 西安电子科技大学 | 一种低射频损耗的硅基氮化镓射频功率器件及其制备方法 |
CN112687527A (zh) * | 2020-12-31 | 2021-04-20 | 华南理工大学 | 一种大尺寸SiC衬底低应力GaN薄膜及其外延生长方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101114594A (zh) * | 2007-08-28 | 2008-01-30 | 中国电子科技集团公司第十三研究所 | 利用铟掺杂提高氮化镓基晶体管材料与器件性能的方法 |
US20140008658A1 (en) * | 2012-07-03 | 2014-01-09 | Infineon Technologies Austria Ag | Stress-Controlled HEMT |
CN104485357A (zh) * | 2014-12-17 | 2015-04-01 | 中国科学院半导体研究所 | 具有氮化镓系高阻层的hemt及制备方法 |
WO2016141762A1 (zh) * | 2015-03-09 | 2016-09-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物增强型hemt及其制备方法 |
-
2018
- 2018-02-11 CN CN201810140968.2A patent/CN108417627B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101114594A (zh) * | 2007-08-28 | 2008-01-30 | 中国电子科技集团公司第十三研究所 | 利用铟掺杂提高氮化镓基晶体管材料与器件性能的方法 |
US20140008658A1 (en) * | 2012-07-03 | 2014-01-09 | Infineon Technologies Austria Ag | Stress-Controlled HEMT |
CN104485357A (zh) * | 2014-12-17 | 2015-04-01 | 中国科学院半导体研究所 | 具有氮化镓系高阻层的hemt及制备方法 |
WO2016141762A1 (zh) * | 2015-03-09 | 2016-09-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物增强型hemt及其制备方法 |
Non-Patent Citations (1)
Title |
---|
赵正平著: "《宽禁带半导体高频及微波功率器件与电路》", 31 December 2017, 国防工业出版社, pages: 185 - 187 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109301027A (zh) * | 2018-08-20 | 2019-02-01 | 西安电子科技大学 | 基于非极性InAlN/GaN异质结构的辐照探测器及其制备方法 |
CN109301027B (zh) * | 2018-08-20 | 2020-09-15 | 西安电子科技大学 | 基于非极性InAlN/GaN异质结构的辐照探测器及其制备方法 |
CN111129111A (zh) * | 2019-12-10 | 2020-05-08 | 深圳市汇芯通信技术有限公司 | 半导体器件及其制作方法和集成电路 |
CN111293037A (zh) * | 2020-02-17 | 2020-06-16 | 启迪新材料(芜湖)有限公司 | 一种P型SiC外延及其生长方法 |
CN111293037B (zh) * | 2020-02-17 | 2023-05-09 | 启迪微电子(芜湖)有限公司 | 一种P型SiC外延及其生长方法 |
CN112466925A (zh) * | 2020-10-22 | 2021-03-09 | 西安电子科技大学 | 一种低射频损耗的硅基氮化镓射频功率器件及其制备方法 |
CN112687527A (zh) * | 2020-12-31 | 2021-04-20 | 华南理工大学 | 一种大尺寸SiC衬底低应力GaN薄膜及其外延生长方法 |
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CN108417627B (zh) | 2024-06-18 |
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Country or region after: China Address after: 330000 No.278 luozhu Road, Xiaolan economic and Technological Development Zone, Nanchang County, Nanchang City, Jiangxi Province Applicant after: Jiangxi Nanotechnology Research Institute Applicant after: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES Address before: 330200 no.266 Huiren Avenue, Xiaolan economic and Technological Development Zone, Nanchang City, Jiangxi Province Applicant before: NANCHANG INSTITUTE, SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS, CAS Country or region before: China Applicant before: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES |
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