CN108398856B - 量测方法和设备、光刻系统和器件制造方法 - Google Patents

量测方法和设备、光刻系统和器件制造方法 Download PDF

Info

Publication number
CN108398856B
CN108398856B CN201810061591.1A CN201810061591A CN108398856B CN 108398856 B CN108398856 B CN 108398856B CN 201810061591 A CN201810061591 A CN 201810061591A CN 108398856 B CN108398856 B CN 108398856B
Authority
CN
China
Prior art keywords
asymmetry
overlay
target structure
target
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810061591.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN108398856A (zh
Inventor
S·A·米德莱布鲁克斯
N·基鹏
H·J·H·斯米尔蒂
A·斯特拉艾杰
M·范德斯卡
M·G·M·M·范卡拉埃吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of CN108398856A publication Critical patent/CN108398856A/zh
Application granted granted Critical
Publication of CN108398856B publication Critical patent/CN108398856B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201810061591.1A 2013-08-07 2014-07-18 量测方法和设备、光刻系统和器件制造方法 Active CN108398856B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361863150P 2013-08-07 2013-08-07
US61/863,150 2013-08-07
US201461975312P 2014-04-04 2014-04-04
US61/975,312 2014-04-04
CN201480044257.5A CN105452962B (zh) 2013-08-07 2014-07-18 量测方法和设备、光刻系统和器件制造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480044257.5A Division CN105452962B (zh) 2013-08-07 2014-07-18 量测方法和设备、光刻系统和器件制造方法

Publications (2)

Publication Number Publication Date
CN108398856A CN108398856A (zh) 2018-08-14
CN108398856B true CN108398856B (zh) 2020-10-16

Family

ID=51211228

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201810061591.1A Active CN108398856B (zh) 2013-08-07 2014-07-18 量测方法和设备、光刻系统和器件制造方法
CN201480044257.5A Active CN105452962B (zh) 2013-08-07 2014-07-18 量测方法和设备、光刻系统和器件制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201480044257.5A Active CN105452962B (zh) 2013-08-07 2014-07-18 量测方法和设备、光刻系统和器件制造方法

Country Status (8)

Country Link
US (4) US9910366B2 (enExample)
JP (2) JP6336068B2 (enExample)
KR (2) KR101855243B1 (enExample)
CN (2) CN108398856B (enExample)
IL (1) IL243854B (enExample)
NL (1) NL2013210A (enExample)
TW (3) TWI563345B (enExample)
WO (1) WO2015018625A1 (enExample)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
NL2011477A (en) * 2012-10-10 2014-04-14 Asml Netherlands Bv Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method.
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
KR101855243B1 (ko) 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
SG11201703585RA (en) * 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
WO2016083076A1 (en) 2014-11-26 2016-06-02 Asml Netherlands B.V. Metrology method, computer product and system
NL2016117A (en) 2015-02-04 2016-09-29 Asml Netherlands Bv Metrology method and apparatus, computer program and lithographic system
US11580274B2 (en) 2015-04-10 2023-02-14 Asml Netherlands B.V. Method and apparatus for inspection and metrology
KR102048794B1 (ko) * 2015-04-21 2020-01-08 에이에스엠엘 네델란즈 비.브이. 계측 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템
TWI656409B (zh) * 2015-09-09 2019-04-11 美商克萊譚克公司 基於輔助電磁場之引入之一階散射測量疊加之新方法
WO2017053150A1 (en) * 2015-09-21 2017-03-30 Kla-Tencor Corporation Method and system for process control with flexible sampling
WO2017108453A1 (en) 2015-12-24 2017-06-29 Asml Netherlands B.V. Methods of controlling a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
JP6644898B2 (ja) 2016-02-19 2020-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 構造を測定する方法、検査装置、リソグラフィシステム、デバイス製造方法、およびそれらで使用する波長選択フィルタ
KR102188711B1 (ko) * 2016-02-26 2020-12-09 에이에스엠엘 네델란즈 비.브이. 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
US12142535B2 (en) 2016-03-01 2024-11-12 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter using a unit cell having geometric symmetry
JP6839720B2 (ja) * 2016-04-22 2021-03-10 エーエスエムエル ネザーランズ ビー．ブイ． スタック差の決定及びスタック差を用いた補正
US10115621B2 (en) 2016-05-13 2018-10-30 Globalfoundries Inc. Method for in-die overlay control using FEOL dummy fill layer
US10481504B2 (en) * 2016-06-10 2019-11-19 Imec Vzw Method and apparatus for semiconductor manufacturing
CN109478023B (zh) 2016-07-15 2021-09-10 Asml荷兰有限公司 用于量测目标场的设计的方法和设备
US10048132B2 (en) 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
EP3293574A1 (en) 2016-09-09 2018-03-14 ASML Netherlands B.V. Metrology method, apparatus and computer program
EP3299890A1 (en) 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
KR102265164B1 (ko) * 2016-09-27 2021-06-15 에이에스엠엘 네델란즈 비.브이. 계측 레시피 선택
US10635004B2 (en) 2016-11-10 2020-04-28 Asml Netherlands B.V. Correction using stack difference
EP3333631A1 (en) 2016-12-06 2018-06-13 ASML Netherlands B.V. Method of measuring a target, metrology apparatus, polarizer assembly
EP3333632A1 (en) 2016-12-08 2018-06-13 ASML Netherlands B.V. Metrology apparatus
US10983005B2 (en) 2016-12-15 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Spectroscopic overlay metrology
EP3336607A1 (en) 2016-12-16 2018-06-20 ASML Netherlands B.V. Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method
EP3358413A1 (en) * 2017-02-02 2018-08-08 ASML Netherlands B.V. Metrology method, apparatus and computer program
US10656535B2 (en) * 2017-03-31 2020-05-19 Imec Vzw Metrology method for a semiconductor manufacturing process
CN110546577B (zh) 2017-04-28 2022-05-24 Asml荷兰有限公司 计量方法和设备以及相关联的计算机程序
WO2018202388A1 (en) 2017-05-03 2018-11-08 Asml Netherlands B.V. Metrology parameter determination and metrology recipe selection
EP3399371A1 (en) 2017-05-05 2018-11-07 ASML Netherlands B.V. Method of measuring a parameter of interest, device manufacturing method, metrology apparatus, and lithographic system
KR102432667B1 (ko) 2017-05-15 2022-08-17 삼성전자주식회사 오버레이 보정방법 및 제어 시스템
EP3422103A1 (en) 2017-06-26 2019-01-02 ASML Netherlands B.V. Method of determining a performance parameter of a process
EP3422105A1 (en) 2017-06-30 2019-01-02 ASML Netherlands B.V. Metrology parameter determination and metrology recipe selection
EP3435162A1 (en) 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program
EP3454126A1 (en) 2017-09-08 2019-03-13 ASML Netherlands B.V. Method for estimating overlay
JP6979529B2 (ja) * 2017-09-11 2021-12-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィプロセスにおける計測
EP3462239A1 (en) * 2017-09-27 2019-04-03 ASML Netherlands B.V. Metrology in lithographic processes
EP3457211A1 (en) * 2017-09-13 2019-03-20 ASML Netherlands B.V. A method of aligning a pair of complementary diffraction patterns and associated metrology method and apparatus
EP3460574A1 (en) 2017-09-22 2019-03-27 ASML Netherlands B.V. Method to determine a patterning process parameter
WO2019057578A1 (en) 2017-09-22 2019-03-28 Asml Netherlands B.V. METHOD FOR DETERMINING A PARAMETER OF PATTERN CREATION PROCESS
US10795268B2 (en) 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
WO2019081211A1 (en) * 2017-10-26 2019-05-02 Asml Netherlands B.V. METHOD FOR DETERMINING A VALUE OF A PARAMETER OF INTEREST, METHOD FOR CLEANING A SIGNAL CONTAINING INFORMATION REGARDING THIS PARAMETER OF INTEREST
EP3492985A1 (en) * 2017-12-04 2019-06-05 ASML Netherlands B.V. Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
EP3518040A1 (en) * 2018-01-30 2019-07-31 ASML Netherlands B.V. A measurement apparatus and a method for determining a substrate grid
JP7227988B2 (ja) 2018-02-27 2023-02-22 エーエスエムエル ネザーランズ ビー．ブイ． 基板上の１つ又は複数の構造の特性を算出するメトロロジ装置及び方法
NL2021848A (en) 2018-04-09 2018-11-06 Stichting Vu Holographic metrology apparatus.
EP3557327A1 (en) * 2018-04-18 2019-10-23 ASML Netherlands B.V. Method of determining a value of a parameter of interest of a target formed by a patterning process
CN112236724B (zh) 2018-06-08 2023-05-23 Asml荷兰有限公司 确定衬底上的一个或更多个结构的特性的量测设备和方法
EP3579052A1 (en) 2018-06-08 2019-12-11 ASML Netherlands B.V. Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
NL2021852A (en) 2018-08-01 2018-11-09 Asml Netherlands Bv Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
EP3605230A1 (en) 2018-08-01 2020-02-05 Stichting VU Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
KR102867021B1 (ko) 2018-09-19 2025-09-30 에이에스엠엘 네델란즈 비.브이. 계측 방법 및 그 장치
CN113227908B (zh) 2018-12-31 2024-08-02 Asml荷兰有限公司 量测方法
WO2020141085A1 (en) 2018-12-31 2020-07-09 Asml Netherlands B.V. Method for overlay metrology and apparatus thereof
EP3731018A1 (en) 2019-04-23 2020-10-28 ASML Netherlands B.V. A method for re-imaging an image and associated metrology apparatus
KR102841633B1 (ko) * 2019-07-10 2025-07-31 삼성전자주식회사 오버레이 보정 방법, 및 그 보정 방법을 기초로 한 포토리소그라피 방법, 반도체 소자 제조방법 및 스캐너 시스템
EP3770682A1 (en) 2019-07-25 2021-01-27 ASML Netherlands B.V. Method and system for determining information about a target structure
WO2021028174A1 (en) 2019-08-14 2021-02-18 Asml Netherlands B.V. Method and metrology tool for determining information about a target structure, and cantilever probe
EP3839635A1 (en) 2019-12-17 2021-06-23 ASML Netherlands B.V. Dark field digital holographic microscope and associated metrology method
JP7611921B2 (ja) 2019-12-17 2025-01-10 エーエスエムエル ネザーランズ ビー．ブイ． 暗視野デジタルホログラフィ顕微鏡および関連する計測方法
EP3876036A1 (en) 2020-03-04 2021-09-08 ASML Netherlands B.V. Vibration isolation system and associated applications in lithography
KR20220166806A (ko) * 2020-04-13 2022-12-19 가부시키가이샤 니콘 계측 장치, 노광 장치, 및 계측 방법
WO2021259559A1 (en) * 2020-06-24 2021-12-30 Asml Netherlands B.V. Metrology method and associated metrology and lithographic apparatuses
JP7511033B2 (ja) * 2020-07-09 2024-07-04 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法及び装置並びにコンピュータプログラム
EP3964892A1 (en) 2020-09-02 2022-03-09 Stichting VU Illumination arrangement and associated dark field digital holographic microscope
WO2022113338A1 (ja) * 2020-11-30 2022-06-02 日本電気株式会社 情報処理装置、情報処理方法、及び、記録媒体
EP4224254A1 (en) 2022-02-04 2023-08-09 ASML Netherlands B.V. Metrology method and associated metrology device
WO2023174648A1 (en) 2022-03-18 2023-09-21 Stichting Vu Illumination arrangement for a metrology device and associated method
EP4246231A1 (en) 2022-03-18 2023-09-20 Stichting VU A method for determining a vertical position of a structure on a substrate and associated apparatuses
EP4246232A1 (en) 2022-03-18 2023-09-20 Stichting VU Illumination arrangement for a metrology device and associated method
CN114678282B (zh) * 2022-05-27 2022-08-02 湖北三维半导体集成创新中心有限责任公司 一种键合补偿方法及装置、芯片再布线方法、键合结构
EP4318131A1 (en) 2022-08-01 2024-02-07 ASML Netherlands B.V. Sensor module, illuminator, metrology device and associated metrology method
EP4332678A1 (en) 2022-09-05 2024-03-06 ASML Netherlands B.V. Holographic metrology apparatus and method
WO2025131523A1 (en) 2023-12-21 2025-06-26 Asml Netherlands B.V. Metrology method for a digital holographic microscope and associated computer program
WO2025203521A1 (ja) * 2024-03-28 2025-10-02 株式会社ニコン マーク計測方法、計測装置、露光装置、演算装置、プログラム及び記憶媒体
WO2025233088A1 (en) 2024-05-08 2025-11-13 Asml Netherlands B.V. Semiconductor bonding alignment systems and methods
CN118299285B (zh) * 2024-06-06 2024-08-16 华芯程(杭州)科技有限公司 多重图形蚀刻补偿方法、装置、介质、程序产品及终端

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
US7704850B2 (en) * 2006-09-08 2010-04-27 Asml Netherlands B.V. Semiconductor device for measuring an overlay error, method for measuring an overlay error, lithographic apparatus and device manufacturing method
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
US8665417B2 (en) 2008-06-11 2014-03-04 Asml Netherlands B.V. Apparatus and method for inspecting a substrate
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
US8189202B2 (en) * 2009-08-04 2012-05-29 Zygo Corporation Interferometer for determining overlay errors
SG178368A1 (en) * 2009-08-24 2012-04-27 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets
DE202009012606U1 (de) 2009-09-18 2010-01-14 Sma Solar Technology Ag Steckbare elektrische Verbindung zwischen zwei Bauteile aufweisenden Gehäusen
CN103003754B (zh) * 2010-07-19 2015-03-11 Asml荷兰有限公司 用于确定重叠误差的方法和设备
JP5661194B2 (ja) 2010-11-12 2015-01-28 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法及び装置、リソグラフィシステム並びにデバイス製造方法
NL2008197A (en) * 2011-02-11 2012-08-14 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method.
NL2009294A (en) 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
NL2009508A (en) * 2011-10-24 2013-04-25 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
US10107621B2 (en) * 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
NL2010401A (en) * 2012-03-27 2013-09-30 Asml Netherlands Bv Metrology method and apparatus, lithographic system and device manufacturing method.
KR101967723B1 (ko) 2012-07-05 2019-04-10 에이에스엠엘 네델란즈 비.브이. 리소그래피를 위한 계측법
KR101855243B1 (ko) 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법

Also Published As

Publication number Publication date
CN108398856A (zh) 2018-08-14
TWI636341B (zh) 2018-09-21
KR101855243B1 (ko) 2018-05-04
IL243854B (en) 2021-01-31
JP2016528549A (ja) 2016-09-15
US10126662B2 (en) 2018-11-13
TWI563345B (en) 2016-12-21
JP6577086B2 (ja) 2019-09-18
JP2018142006A (ja) 2018-09-13
US10331041B2 (en) 2019-06-25
JP6336068B2 (ja) 2018-06-06
TWI600981B (zh) 2017-10-01
TW201704898A (zh) 2017-02-01
KR20160042008A (ko) 2016-04-18
US10725386B2 (en) 2020-07-28
KR102124204B1 (ko) 2020-06-18
CN105452962B (zh) 2018-02-09
US20190278190A1 (en) 2019-09-12
US20160161864A1 (en) 2016-06-09
KR20180049220A (ko) 2018-05-10
US20190049860A1 (en) 2019-02-14
TW201506554A (zh) 2015-02-16
US9910366B2 (en) 2018-03-06
CN105452962A (zh) 2016-03-30
WO2015018625A1 (en) 2015-02-12
IL243854A0 (en) 2016-04-21
TW201809902A (zh) 2018-03-16
US20180196357A1 (en) 2018-07-12
NL2013210A (en) 2015-02-10

Similar Documents

Publication Publication Date Title
CN108398856B (zh) 量测方法和设备、光刻系统和器件制造方法
US11022900B2 (en) Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method
KR101761735B1 (ko) 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
US8797554B2 (en) Determining a structural parameter and correcting an asymmetry property
JP6045588B2 (ja) メトロロジ方法及び装置並びにデバイス製造方法
US20150138523A1 (en) Metrology Method and Apparatus, Substrate, Lithographic System and Device Manufacturing Method
WO2014082938A1 (en) Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method
TWI569108B (zh) 檢測方法、具有度量衡目標之基板、微影系統及器件製造方法
WO2016124393A1 (en) Metrology method and apparatus, computer program and lithographic system
TW201728991A (zh) 度量衡目標、方法和設備、電腦程式及微影系統
KR20160008638A (ko) 임계 치수 관련 특성을 결정하는 방법, 검사 장치, 및 디바이스 제조 방법
KR20180087410A (ko) 위치 측정 방법, 리소그래피 장치, 리소 셀 및 디바이스 제조 방법
CN111201489A (zh) 量测方法
CN113168119A (zh) 用于测量光刻过程的参数的目标

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant