TWI563345B - Metrology method and apparatus, lithographic system and device manufacturing method - Google Patents
Metrology method and apparatus, lithographic system and device manufacturing methodInfo
- Publication number
- TWI563345B TWI563345B TW103126643A TW103126643A TWI563345B TW I563345 B TWI563345 B TW I563345B TW 103126643 A TW103126643 A TW 103126643A TW 103126643 A TW103126643 A TW 103126643A TW I563345 B TWI563345 B TW I563345B
- Authority
- TW
- Taiwan
- Prior art keywords
- device manufacturing
- lithographic system
- metrology
- metrology method
- lithographic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361863150P | 2013-08-07 | 2013-08-07 | |
US201461975312P | 2014-04-04 | 2014-04-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201506554A TW201506554A (zh) | 2015-02-16 |
TWI563345B true TWI563345B (en) | 2016-12-21 |
Family
ID=51211228
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103126643A TWI563345B (en) | 2013-08-07 | 2014-08-04 | Metrology method and apparatus, lithographic system and device manufacturing method |
TW106126036A TWI636341B (zh) | 2013-08-07 | 2014-08-04 | 量測微影程序之參數之方法 |
TW105134143A TWI600981B (zh) | 2013-08-07 | 2014-08-04 | 度量衡方法及裝置、微影系統及元件製造方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106126036A TWI636341B (zh) | 2013-08-07 | 2014-08-04 | 量測微影程序之參數之方法 |
TW105134143A TWI600981B (zh) | 2013-08-07 | 2014-08-04 | 度量衡方法及裝置、微影系統及元件製造方法 |
Country Status (8)
Country | Link |
---|---|
US (4) | US9910366B2 (zh) |
JP (2) | JP6336068B2 (zh) |
KR (2) | KR101855243B1 (zh) |
CN (2) | CN105452962B (zh) |
IL (1) | IL243854B (zh) |
NL (1) | NL2013210A (zh) |
TW (3) | TWI563345B (zh) |
WO (1) | WO2015018625A1 (zh) |
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JP6336068B2 (ja) | 2013-08-07 | 2018-06-06 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ方法および装置、リソグラフィシステムならびにデバイス製造方法 |
SG11201703585RA (en) * | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
CN107111250B (zh) | 2014-11-26 | 2019-10-11 | Asml荷兰有限公司 | 度量方法、计算机产品和系统 |
KR102025214B1 (ko) | 2015-02-04 | 2019-09-25 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템 |
KR102353145B1 (ko) * | 2015-04-10 | 2022-01-18 | 에이에스엠엘 네델란즈 비.브이. | 검사와 계측을 위한 방법 및 장치 |
KR102048794B1 (ko) | 2015-04-21 | 2020-01-08 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템 |
TWI656409B (zh) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | 基於輔助電磁場之引入之一階散射測量疊加之新方法 |
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US10908512B2 (en) | 2015-12-24 | 2021-02-02 | Asml Netherlands B.V. | Methods of controlling a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus |
CN108700824B (zh) | 2016-02-19 | 2021-02-02 | Asml荷兰有限公司 | 测量结构的方法、检查设备、光刻系统、器件制造方法和其中使用的波长选择滤光器 |
JP6703612B2 (ja) * | 2016-02-26 | 2020-06-03 | エーエスエムエル ネザーランズ ビー.ブイ. | 構造を測定する方法、検査装置、リソグラフィシステム、およびデバイス製造方法 |
US10811323B2 (en) * | 2016-03-01 | 2020-10-20 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter |
KR102238466B1 (ko) * | 2016-04-22 | 2021-04-09 | 에이에스엠엘 네델란즈 비.브이. | 스택 차이의 결정 및 스택 차이를 사용한 정정 기술 |
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CN109478023B (zh) | 2016-07-15 | 2021-09-10 | Asml荷兰有限公司 | 用于量测目标场的设计的方法和设备 |
US10048132B2 (en) | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
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EP3336607A1 (en) | 2016-12-16 | 2018-06-20 | ASML Netherlands B.V. | Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method |
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US10656535B2 (en) * | 2017-03-31 | 2020-05-19 | Imec Vzw | Metrology method for a semiconductor manufacturing process |
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KR102432667B1 (ko) | 2017-05-15 | 2022-08-17 | 삼성전자주식회사 | 오버레이 보정방법 및 제어 시스템 |
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US20120123581A1 (en) * | 2010-11-12 | 2012-05-17 | Asml Netherlands B.V. | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method |
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JP6336068B2 (ja) | 2013-08-07 | 2018-06-06 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ方法および装置、リソグラフィシステムならびにデバイス製造方法 |
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2014
- 2014-07-18 JP JP2016532295A patent/JP6336068B2/ja active Active
- 2014-07-18 KR KR1020167005967A patent/KR101855243B1/ko active Application Filing
- 2014-07-18 CN CN201480044257.5A patent/CN105452962B/zh active Active
- 2014-07-18 WO PCT/EP2014/065461 patent/WO2015018625A1/en active Application Filing
- 2014-07-18 NL NL2013210A patent/NL2013210A/en not_active Application Discontinuation
- 2014-07-18 CN CN201810061591.1A patent/CN108398856B/zh active Active
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US20120123581A1 (en) * | 2010-11-12 | 2012-05-17 | Asml Netherlands B.V. | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method |
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WO2015018625A1 (en) | 2015-02-12 |
KR20160042008A (ko) | 2016-04-18 |
KR101855243B1 (ko) | 2018-05-04 |
US10725386B2 (en) | 2020-07-28 |
CN105452962A (zh) | 2016-03-30 |
CN105452962B (zh) | 2018-02-09 |
US20160161864A1 (en) | 2016-06-09 |
TW201506554A (zh) | 2015-02-16 |
CN108398856A (zh) | 2018-08-14 |
TW201809902A (zh) | 2018-03-16 |
KR102124204B1 (ko) | 2020-06-18 |
US9910366B2 (en) | 2018-03-06 |
NL2013210A (en) | 2015-02-10 |
CN108398856B (zh) | 2020-10-16 |
US20180196357A1 (en) | 2018-07-12 |
IL243854B (en) | 2021-01-31 |
JP6336068B2 (ja) | 2018-06-06 |
TW201704898A (zh) | 2017-02-01 |
JP2016528549A (ja) | 2016-09-15 |
IL243854A0 (en) | 2016-04-21 |
US20190049860A1 (en) | 2019-02-14 |
TWI600981B (zh) | 2017-10-01 |
US10331041B2 (en) | 2019-06-25 |
JP2018142006A (ja) | 2018-09-13 |
KR20180049220A (ko) | 2018-05-10 |
JP6577086B2 (ja) | 2019-09-18 |
TWI636341B (zh) | 2018-09-21 |
US10126662B2 (en) | 2018-11-13 |
US20190278190A1 (en) | 2019-09-12 |
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