TWI563345B - Metrology method and apparatus, lithographic system and device manufacturing method - Google Patents
Metrology method and apparatus, lithographic system and device manufacturing methodInfo
- Publication number
- TWI563345B TWI563345B TW103126643A TW103126643A TWI563345B TW I563345 B TWI563345 B TW I563345B TW 103126643 A TW103126643 A TW 103126643A TW 103126643 A TW103126643 A TW 103126643A TW I563345 B TWI563345 B TW I563345B
- Authority
- TW
- Taiwan
- Prior art keywords
- device manufacturing
- lithographic system
- metrology
- metrology method
- lithographic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361863150P | 2013-08-07 | 2013-08-07 | |
| US201461975312P | 2014-04-04 | 2014-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201506554A TW201506554A (zh) | 2015-02-16 |
| TWI563345B true TWI563345B (en) | 2016-12-21 |
Family
ID=51211228
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103126643A TWI563345B (en) | 2013-08-07 | 2014-08-04 | Metrology method and apparatus, lithographic system and device manufacturing method |
| TW106126036A TWI636341B (zh) | 2013-08-07 | 2014-08-04 | 量測微影程序之參數之方法 |
| TW105134143A TWI600981B (zh) | 2013-08-07 | 2014-08-04 | 度量衡方法及裝置、微影系統及元件製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106126036A TWI636341B (zh) | 2013-08-07 | 2014-08-04 | 量測微影程序之參數之方法 |
| TW105134143A TWI600981B (zh) | 2013-08-07 | 2014-08-04 | 度量衡方法及裝置、微影系統及元件製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9910366B2 (enExample) |
| JP (2) | JP6336068B2 (enExample) |
| KR (2) | KR102124204B1 (enExample) |
| CN (2) | CN108398856B (enExample) |
| IL (1) | IL243854B (enExample) |
| NL (1) | NL2013210A (enExample) |
| TW (3) | TWI563345B (enExample) |
| WO (1) | WO2015018625A1 (enExample) |
Families Citing this family (82)
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| US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US10890436B2 (en) | 2011-07-19 | 2021-01-12 | Kla Corporation | Overlay targets with orthogonal underlayer dummyfill |
| NL2011477A (en) * | 2012-10-10 | 2014-04-14 | Asml Netherlands Bv | Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method. |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| KR102124204B1 (ko) | 2013-08-07 | 2020-06-18 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| CN107078074B (zh) * | 2014-11-25 | 2021-05-25 | 科磊股份有限公司 | 分析及利用景观 |
| CN110553602B (zh) | 2014-11-26 | 2021-10-26 | Asml荷兰有限公司 | 度量方法、计算机产品和系统 |
| CN107430350B (zh) | 2015-02-04 | 2019-10-18 | Asml荷兰有限公司 | 计量方法和设备、计算机程序和光刻系统 |
| US11580274B2 (en) | 2015-04-10 | 2023-02-14 | Asml Netherlands B.V. | Method and apparatus for inspection and metrology |
| WO2016169901A1 (en) * | 2015-04-21 | 2016-10-27 | Asml Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
| TWI656409B (zh) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | 基於輔助電磁場之引入之一階散射測量疊加之新方法 |
| CN108028210B (zh) * | 2015-09-21 | 2022-07-12 | 科磊股份有限公司 | 用于使用灵活取样的过程控制的方法及系统 |
| CN108431695B (zh) | 2015-12-24 | 2020-07-21 | Asml荷兰有限公司 | 控制图案形成过程的方法、器件制造方法、用于光刻设备的控制系统以及光刻设备 |
| JP6644898B2 (ja) | 2016-02-19 | 2020-02-12 | エーエスエムエル ネザーランズ ビー．ブイ． | 構造を測定する方法、検査装置、リソグラフィシステム、デバイス製造方法、およびそれらで使用する波長選択フィルタ |
| KR102188711B1 (ko) * | 2016-02-26 | 2020-12-09 | 에이에스엠엘 네델란즈 비.브이. | 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| US10546790B2 (en) | 2016-03-01 | 2020-01-28 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter |
| IL262114B2 (en) | 2016-04-22 | 2023-04-01 | Asml Netherlands Bv | Determining the stack difference and correcting with the help of the stack difference |
| US10115621B2 (en) | 2016-05-13 | 2018-10-30 | Globalfoundries Inc. | Method for in-die overlay control using FEOL dummy fill layer |
| TWI704421B (zh) * | 2016-06-10 | 2020-09-11 | 比利時商愛美科公司 | 半導體製程的量測方法 |
| IL297496B2 (en) | 2016-07-15 | 2025-03-01 | Asml Netherlands Bv | Method and device for designing a target field for metrology |
| US10048132B2 (en) | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
| EP3293574A1 (en) | 2016-09-09 | 2018-03-14 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| EP3299890A1 (en) | 2016-09-27 | 2018-03-28 | ASML Netherlands B.V. | Metrology recipe selection |
| KR102265164B1 (ko) * | 2016-09-27 | 2021-06-15 | 에이에스엠엘 네델란즈 비.브이. | 계측 레시피 선택 |
| JP6880184B2 (ja) * | 2016-11-10 | 2021-06-02 | エーエスエムエル ネザーランズ ビー．ブイ． | スタック差を使用した設計及び補正 |
| EP3333631A1 (en) | 2016-12-06 | 2018-06-13 | ASML Netherlands B.V. | Method of measuring a target, metrology apparatus, polarizer assembly |
| EP3333632A1 (en) | 2016-12-08 | 2018-06-13 | ASML Netherlands B.V. | Metrology apparatus |
| US10983005B2 (en) | 2016-12-15 | 2021-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spectroscopic overlay metrology |
| EP3336607A1 (en) | 2016-12-16 | 2018-06-20 | ASML Netherlands B.V. | Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method |
| EP3358413A1 (en) * | 2017-02-02 | 2018-08-08 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| US10656535B2 (en) * | 2017-03-31 | 2020-05-19 | Imec Vzw | Metrology method for a semiconductor manufacturing process |
| KR102331098B1 (ko) | 2017-04-28 | 2021-11-24 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 장치 및 연관된 컴퓨터 프로그램 |
| WO2018202388A1 (en) | 2017-05-03 | 2018-11-08 | Asml Netherlands B.V. | Metrology parameter determination and metrology recipe selection |
| EP3399371A1 (en) | 2017-05-05 | 2018-11-07 | ASML Netherlands B.V. | Method of measuring a parameter of interest, device manufacturing method, metrology apparatus, and lithographic system |
| KR102432667B1 (ko) | 2017-05-15 | 2022-08-17 | 삼성전자주식회사 | 오버레이 보정방법 및 제어 시스템 |
| EP3422103A1 (en) | 2017-06-26 | 2019-01-02 | ASML Netherlands B.V. | Method of determining a performance parameter of a process |
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| EP3454126A1 (en) | 2017-09-08 | 2019-03-13 | ASML Netherlands B.V. | Method for estimating overlay |
| EP3462239A1 (en) * | 2017-09-27 | 2019-04-03 | ASML Netherlands B.V. | Metrology in lithographic processes |
| IL273145B2 (en) * | 2017-09-11 | 2024-03-01 | Asml Netherlands Bv | Metrology in lithographic processes |
| EP3457211A1 (en) | 2017-09-13 | 2019-03-20 | ASML Netherlands B.V. | A method of aligning a pair of complementary diffraction patterns and associated metrology method and apparatus |
| EP3460574A1 (en) | 2017-09-22 | 2019-03-27 | ASML Netherlands B.V. | Method to determine a patterning process parameter |
| JP7050150B2 (ja) | 2017-09-22 | 2022-04-07 | エーエスエムエル ネザーランズ ビー．ブイ． | パターニングプロセスパラメータを決定する方法 |
| US10795268B2 (en) | 2017-09-29 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for measuring overlay errors using overlay measurement patterns |
| CN111279268B (zh) * | 2017-10-26 | 2022-04-01 | Asml荷兰有限公司 | 确定所关注的参数的值的方法、清除包含关于所关注的参数的信息的信号的方法 |
| EP3492985A1 (en) * | 2017-12-04 | 2019-06-05 | ASML Netherlands B.V. | Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets |
| US10705435B2 (en) * | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| EP3518040A1 (en) | 2018-01-30 | 2019-07-31 | ASML Netherlands B.V. | A measurement apparatus and a method for determining a substrate grid |
| WO2019166190A1 (en) | 2018-02-27 | 2019-09-06 | Stichting Vu | Metrology apparatus and method for determining a characteristic of one or more structures on a substrate |
| NL2021848A (en) | 2018-04-09 | 2018-11-06 | Stichting Vu | Holographic metrology apparatus. |
| EP3557327A1 (en) * | 2018-04-18 | 2019-10-23 | ASML Netherlands B.V. | Method of determining a value of a parameter of interest of a target formed by a patterning process |
| EP3579052A1 (en) | 2018-06-08 | 2019-12-11 | ASML Netherlands B.V. | Metrology apparatus and method for determining a characteristic of one or more structures on a substrate |
| CN116758012A (zh) | 2018-06-08 | 2023-09-15 | Asml荷兰有限公司 | 确定与在衬底上的结构相关的感兴趣的特性的方法、掩模版、衬底 |
| EP3605230A1 (en) | 2018-08-01 | 2020-02-05 | Stichting VU | Metrology apparatus and method for determining a characteristic of one or more structures on a substrate |
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| KR20210044283A (ko) | 2018-09-19 | 2021-04-22 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 그 장치 |
| US12130246B2 (en) | 2018-12-31 | 2024-10-29 | Asml Netherlands B.V. | Method for overlay metrology and apparatus thereof |
| CN113227908B (zh) | 2018-12-31 | 2024-08-02 | Asml荷兰有限公司 | 量测方法 |
| EP3731018A1 (en) | 2019-04-23 | 2020-10-28 | ASML Netherlands B.V. | A method for re-imaging an image and associated metrology apparatus |
| KR102841633B1 (ko) * | 2019-07-10 | 2025-07-31 | 삼성전자주식회사 | 오버레이 보정 방법, 및 그 보정 방법을 기초로 한 포토리소그라피 방법, 반도체 소자 제조방법 및 스캐너 시스템 |
| EP3770682A1 (en) | 2019-07-25 | 2021-01-27 | ASML Netherlands B.V. | Method and system for determining information about a target structure |
| US12209994B2 (en) | 2019-08-14 | 2025-01-28 | Asml Netherlands B.V. | Method and metrology tool for determining information about a target structure, and cantilever probe |
| US20230044632A1 (en) | 2019-12-17 | 2023-02-09 | Asml Netherlands B.V. | Dark field digital holographic microscope and associated metrology method |
| EP3839635A1 (en) | 2019-12-17 | 2021-06-23 | ASML Netherlands B.V. | Dark field digital holographic microscope and associated metrology method |
| EP3876036A1 (en) | 2020-03-04 | 2021-09-08 | ASML Netherlands B.V. | Vibration isolation system and associated applications in lithography |
| WO2021210052A1 (ja) * | 2020-04-13 | 2021-10-21 | 株式会社ニコン | 計測装置、露光装置、および計測方法 |
| CN115803685A (zh) | 2020-06-24 | 2023-03-14 | Asml荷兰有限公司 | 量测方法及相关联的量测和光刻设备 |
| CN115777084A (zh) | 2020-07-09 | 2023-03-10 | Asml荷兰有限公司 | 量测方法、设备和计算机程序 |
| EP3964892A1 (en) | 2020-09-02 | 2022-03-09 | Stichting VU | Illumination arrangement and associated dark field digital holographic microscope |
| WO2022113338A1 (ja) * | 2020-11-30 | 2022-06-02 | 日本電気株式会社 | 情報処理装置、情報処理方法、及び、記録媒体 |
| EP4224254A1 (en) | 2022-02-04 | 2023-08-09 | ASML Netherlands B.V. | Metrology method and associated metrology device |
| EP4246231A1 (en) | 2022-03-18 | 2023-09-20 | Stichting VU | A method for determining a vertical position of a structure on a substrate and associated apparatuses |
| WO2023174648A1 (en) | 2022-03-18 | 2023-09-21 | Stichting Vu | Illumination arrangement for a metrology device and associated method |
| EP4246232A1 (en) | 2022-03-18 | 2023-09-20 | Stichting VU | Illumination arrangement for a metrology device and associated method |
| CN114678282B (zh) * | 2022-05-27 | 2022-08-02 | 湖北三维半导体集成创新中心有限责任公司 | 一种键合补偿方法及装置、芯片再布线方法、键合结构 |
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| WO2025203521A1 (ja) * | 2024-03-28 | 2025-10-02 | 株式会社ニコン | マーク計測方法、計測装置、露光装置、演算装置、プログラム及び記憶媒体 |
| WO2025233088A1 (en) | 2024-05-08 | 2025-11-13 | Asml Netherlands B.V. | Semiconductor bonding alignment systems and methods |
| CN118299285B (zh) * | 2024-06-06 | 2024-08-16 | 华芯程(杭州)科技有限公司 | 多重图形蚀刻补偿方法、装置、介质、程序产品及终端 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120123581A1 (en) * | 2010-11-12 | 2012-05-17 | Asml Netherlands B.V. | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method |
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| JP2013502592A (ja) * | 2009-08-24 | 2013-01-24 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジ方法および装置、リソグラフィ装置、リソグラフィプロセシングセル、およびメトロロジターゲットを備える基板 |
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2014
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- 2014-07-18 NL NL2013210A patent/NL2013210A/en not_active Application Discontinuation
- 2014-07-18 WO PCT/EP2014/065461 patent/WO2015018625A1/en not_active Ceased
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- 2014-08-04 TW TW103126643A patent/TWI563345B/zh active
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Patent Citations (1)
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|---|---|---|---|---|
| US20120123581A1 (en) * | 2010-11-12 | 2012-05-17 | Asml Netherlands B.V. | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method |
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| CN105452962A (zh) | 2016-03-30 |
| US9910366B2 (en) | 2018-03-06 |
| KR20180049220A (ko) | 2018-05-10 |
| WO2015018625A1 (en) | 2015-02-12 |
| CN105452962B (zh) | 2018-02-09 |
| US10725386B2 (en) | 2020-07-28 |
| US20190049860A1 (en) | 2019-02-14 |
| NL2013210A (en) | 2015-02-10 |
| US10331041B2 (en) | 2019-06-25 |
| KR20160042008A (ko) | 2016-04-18 |
| CN108398856A (zh) | 2018-08-14 |
| JP2018142006A (ja) | 2018-09-13 |
| KR101855243B1 (ko) | 2018-05-04 |
| US20160161864A1 (en) | 2016-06-09 |
| US10126662B2 (en) | 2018-11-13 |
| US20180196357A1 (en) | 2018-07-12 |
| TWI600981B (zh) | 2017-10-01 |
| US20190278190A1 (en) | 2019-09-12 |
| TW201506554A (zh) | 2015-02-16 |
| TWI636341B (zh) | 2018-09-21 |
| CN108398856B (zh) | 2020-10-16 |
| TW201809902A (zh) | 2018-03-16 |
| IL243854A0 (en) | 2016-04-21 |
| JP2016528549A (ja) | 2016-09-15 |
| IL243854B (en) | 2021-01-31 |
| TW201704898A (zh) | 2017-02-01 |
| KR102124204B1 (ko) | 2020-06-18 |
| JP6577086B2 (ja) | 2019-09-18 |
| JP6336068B2 (ja) | 2018-06-06 |
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