IL243854B - Metrology method and apparatus, lithographic system and device manufacturing method - Google Patents
Metrology method and apparatus, lithographic system and device manufacturing methodInfo
- Publication number
- IL243854B IL243854B IL243854A IL24385416A IL243854B IL 243854 B IL243854 B IL 243854B IL 243854 A IL243854 A IL 243854A IL 24385416 A IL24385416 A IL 24385416A IL 243854 B IL243854 B IL 243854B
- Authority
- IL
- Israel
- Prior art keywords
- standard
- making
- metrological
- lithographic system
- lithographic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361863150P | 2013-08-07 | 2013-08-07 | |
| US201461975312P | 2014-04-04 | 2014-04-04 | |
| PCT/EP2014/065461 WO2015018625A1 (en) | 2013-08-07 | 2014-07-18 | Metrology method and apparatus, lithographic system and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL243854A0 IL243854A0 (en) | 2016-04-21 |
| IL243854B true IL243854B (en) | 2021-01-31 |
Family
ID=51211228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL243854A IL243854B (en) | 2013-08-07 | 2016-01-31 | Metrology method and apparatus, lithographic system and device manufacturing method |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9910366B2 (enExample) |
| JP (2) | JP6336068B2 (enExample) |
| KR (2) | KR102124204B1 (enExample) |
| CN (2) | CN105452962B (enExample) |
| IL (1) | IL243854B (enExample) |
| NL (1) | NL2013210A (enExample) |
| TW (3) | TWI563345B (enExample) |
| WO (1) | WO2015018625A1 (enExample) |
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| US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US10890436B2 (en) | 2011-07-19 | 2021-01-12 | Kla Corporation | Overlay targets with orthogonal underlayer dummyfill |
| NL2011477A (en) * | 2012-10-10 | 2014-04-14 | Asml Netherlands Bv | Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method. |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| CN105452962B (zh) | 2013-08-07 | 2018-02-09 | Asml荷兰有限公司 | 量测方法和设备、光刻系统和器件制造方法 |
| SG11201703585RA (en) * | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
| IL290735B2 (en) | 2014-11-26 | 2023-03-01 | Asml Netherlands Bv | Metrological method, computer product and system |
| CN107430350B (zh) | 2015-02-04 | 2019-10-18 | Asml荷兰有限公司 | 计量方法和设备、计算机程序和光刻系统 |
| KR102469978B1 (ko) | 2015-04-10 | 2022-11-22 | 에이에스엠엘 네델란즈 비.브이. | 검사와 계측을 위한 방법 및 장치 |
| CN107771271B (zh) * | 2015-04-21 | 2020-11-06 | Asml荷兰有限公司 | 量测方法和设备、计算机程序及光刻系统 |
| TWI656409B (zh) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | 基於輔助電磁場之引入之一階散射測量疊加之新方法 |
| KR102351636B1 (ko) * | 2015-09-21 | 2022-01-13 | 케이엘에이 코포레이션 | 유연적 샘플링을 이용한 공정 제어 방법 및 시스템 |
| CN108431695B (zh) | 2015-12-24 | 2020-07-21 | Asml荷兰有限公司 | 控制图案形成过程的方法、器件制造方法、用于光刻设备的控制系统以及光刻设备 |
| WO2017140528A1 (en) | 2016-02-19 | 2017-08-24 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| KR102188711B1 (ko) * | 2016-02-26 | 2020-12-09 | 에이에스엠엘 네델란즈 비.브이. | 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| US10615084B2 (en) | 2016-03-01 | 2020-04-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values |
| CN109073992B (zh) | 2016-04-22 | 2021-09-28 | Asml荷兰有限公司 | 堆叠差异的确定和使用堆叠差异的校正 |
| US10115621B2 (en) | 2016-05-13 | 2018-10-30 | Globalfoundries Inc. | Method for in-die overlay control using FEOL dummy fill layer |
| JP6753958B2 (ja) * | 2016-06-10 | 2020-09-09 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | 半導体製造プロセスのための計測方法および装置 |
| IL297496B2 (en) | 2016-07-15 | 2025-03-01 | Asml Netherlands Bv | Method and device for designing a target field for metrology |
| US10048132B2 (en) | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
| EP3293574A1 (en) | 2016-09-09 | 2018-03-14 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| JP6855565B2 (ja) | 2016-09-27 | 2021-04-07 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジレシピ選択 |
| EP3299890A1 (en) | 2016-09-27 | 2018-03-28 | ASML Netherlands B.V. | Metrology recipe selection |
| KR102259091B1 (ko) * | 2016-11-10 | 2021-06-01 | 에이에스엠엘 네델란즈 비.브이. | 스택 차이를 이용한 설계 및 교정 |
| EP3333631A1 (en) | 2016-12-06 | 2018-06-13 | ASML Netherlands B.V. | Method of measuring a target, metrology apparatus, polarizer assembly |
| EP3333632A1 (en) | 2016-12-08 | 2018-06-13 | ASML Netherlands B.V. | Metrology apparatus |
| US10983005B2 (en) | 2016-12-15 | 2021-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spectroscopic overlay metrology |
| EP3336607A1 (en) | 2016-12-16 | 2018-06-20 | ASML Netherlands B.V. | Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method |
| EP3358413A1 (en) * | 2017-02-02 | 2018-08-08 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| US10656535B2 (en) * | 2017-03-31 | 2020-05-19 | Imec Vzw | Metrology method for a semiconductor manufacturing process |
| KR102331098B1 (ko) | 2017-04-28 | 2021-11-24 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법 및 장치 및 연관된 컴퓨터 프로그램 |
| WO2018202388A1 (en) | 2017-05-03 | 2018-11-08 | Asml Netherlands B.V. | Metrology parameter determination and metrology recipe selection |
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| KR102432667B1 (ko) | 2017-05-15 | 2022-08-17 | 삼성전자주식회사 | 오버레이 보정방법 및 제어 시스템 |
| EP3422103A1 (en) | 2017-06-26 | 2019-01-02 | ASML Netherlands B.V. | Method of determining a performance parameter of a process |
| EP3422105A1 (en) | 2017-06-30 | 2019-01-02 | ASML Netherlands B.V. | Metrology parameter determination and metrology recipe selection |
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| KR102841633B1 (ko) * | 2019-07-10 | 2025-07-31 | 삼성전자주식회사 | 오버레이 보정 방법, 및 그 보정 방법을 기초로 한 포토리소그라피 방법, 반도체 소자 제조방법 및 스캐너 시스템 |
| EP3770682A1 (en) | 2019-07-25 | 2021-01-27 | ASML Netherlands B.V. | Method and system for determining information about a target structure |
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| EP3876036A1 (en) | 2020-03-04 | 2021-09-08 | ASML Netherlands B.V. | Vibration isolation system and associated applications in lithography |
| EP4137776A4 (en) * | 2020-04-13 | 2024-09-18 | Nikon Corporation | Measuring device, exposure device, and measurement method |
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| WO2011012624A1 (en) | 2009-07-31 | 2011-02-03 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system, and lithographic processing cell |
| US8189202B2 (en) | 2009-08-04 | 2012-05-29 | Zygo Corporation | Interferometer for determining overlay errors |
| CN102483582B (zh) * | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底 |
| DE202009012606U1 (de) | 2009-09-18 | 2010-01-14 | Sma Solar Technology Ag | Steckbare elektrische Verbindung zwischen zwei Bauteile aufweisenden Gehäusen |
| WO2012010458A1 (en) * | 2010-07-19 | 2012-01-26 | Asml Netherlands B.V. | Method and apparatus for determining an overlay error |
| KR101492205B1 (ko) * | 2010-11-12 | 2015-02-10 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법 |
| IL217843A (en) * | 2011-02-11 | 2016-11-30 | Asml Netherlands Bv | Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method |
| NL2009294A (en) | 2011-08-30 | 2013-03-04 | Asml Netherlands Bv | Method and apparatus for determining an overlay error. |
| NL2009508A (en) | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | Metrology method and apparatus, and device manufacturing method. |
| US10107621B2 (en) * | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
| KR101761735B1 (ko) * | 2012-03-27 | 2017-07-26 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| CN104471484B (zh) | 2012-07-05 | 2018-02-06 | Asml荷兰有限公司 | 用于光刻术的量测 |
| CN105452962B (zh) | 2013-08-07 | 2018-02-09 | Asml荷兰有限公司 | 量测方法和设备、光刻系统和器件制造方法 |
-
2014
- 2014-07-18 CN CN201480044257.5A patent/CN105452962B/zh active Active
- 2014-07-18 US US14/906,896 patent/US9910366B2/en active Active
- 2014-07-18 KR KR1020187012297A patent/KR102124204B1/ko active Active
- 2014-07-18 JP JP2016532295A patent/JP6336068B2/ja active Active
- 2014-07-18 NL NL2013210A patent/NL2013210A/en not_active Application Discontinuation
- 2014-07-18 CN CN201810061591.1A patent/CN108398856B/zh active Active
- 2014-07-18 KR KR1020167005967A patent/KR101855243B1/ko active Active
- 2014-07-18 WO PCT/EP2014/065461 patent/WO2015018625A1/en not_active Ceased
- 2014-08-04 TW TW103126643A patent/TWI563345B/zh active
- 2014-08-04 TW TW105134143A patent/TWI600981B/zh active
- 2014-08-04 TW TW106126036A patent/TWI636341B/zh active
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- 2016-01-31 IL IL243854A patent/IL243854B/en active IP Right Grant
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- 2018-03-05 US US15/912,036 patent/US10126662B2/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101855243B1 (ko) | 2018-05-04 |
| JP6577086B2 (ja) | 2019-09-18 |
| JP2016528549A (ja) | 2016-09-15 |
| KR102124204B1 (ko) | 2020-06-18 |
| TW201704898A (zh) | 2017-02-01 |
| JP6336068B2 (ja) | 2018-06-06 |
| KR20180049220A (ko) | 2018-05-10 |
| US20190049860A1 (en) | 2019-02-14 |
| CN108398856A (zh) | 2018-08-14 |
| TWI563345B (en) | 2016-12-21 |
| CN108398856B (zh) | 2020-10-16 |
| US9910366B2 (en) | 2018-03-06 |
| US10331041B2 (en) | 2019-06-25 |
| NL2013210A (en) | 2015-02-10 |
| US20190278190A1 (en) | 2019-09-12 |
| CN105452962A (zh) | 2016-03-30 |
| JP2018142006A (ja) | 2018-09-13 |
| US10126662B2 (en) | 2018-11-13 |
| US20160161864A1 (en) | 2016-06-09 |
| TWI636341B (zh) | 2018-09-21 |
| CN105452962B (zh) | 2018-02-09 |
| WO2015018625A1 (en) | 2015-02-12 |
| TW201506554A (zh) | 2015-02-16 |
| US20180196357A1 (en) | 2018-07-12 |
| IL243854A0 (en) | 2016-04-21 |
| TWI600981B (zh) | 2017-10-01 |
| KR20160042008A (ko) | 2016-04-18 |
| US10725386B2 (en) | 2020-07-28 |
| TW201809902A (zh) | 2018-03-16 |
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