IL243854B - Metrology method and apparatus, lithographic system and device manufacturing method - Google Patents
Metrology method and apparatus, lithographic system and device manufacturing methodInfo
- Publication number
- IL243854B IL243854B IL243854A IL24385416A IL243854B IL 243854 B IL243854 B IL 243854B IL 243854 A IL243854 A IL 243854A IL 24385416 A IL24385416 A IL 24385416A IL 243854 B IL243854 B IL 243854B
- Authority
- IL
- Israel
- Prior art keywords
- standard
- making
- metrological
- lithographic system
- lithographic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H10P74/203—
-
- H10P74/27—
-
- H10P76/2041—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361863150P | 2013-08-07 | 2013-08-07 | |
| US201461975312P | 2014-04-04 | 2014-04-04 | |
| PCT/EP2014/065461 WO2015018625A1 (en) | 2013-08-07 | 2014-07-18 | Metrology method and apparatus, lithographic system and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL243854A0 IL243854A0 (en) | 2016-04-21 |
| IL243854B true IL243854B (en) | 2021-01-31 |
Family
ID=51211228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL243854A IL243854B (en) | 2013-08-07 | 2016-01-31 | Metrology method and apparatus, lithographic system and device manufacturing method |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9910366B2 (enExample) |
| JP (2) | JP6336068B2 (enExample) |
| KR (2) | KR102124204B1 (enExample) |
| CN (2) | CN105452962B (enExample) |
| IL (1) | IL243854B (enExample) |
| NL (1) | NL2013210A (enExample) |
| TW (3) | TWI600981B (enExample) |
| WO (1) | WO2015018625A1 (enExample) |
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| NL2011477A (en) * | 2012-10-10 | 2014-04-14 | Asml Netherlands Bv | Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method. |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| WO2015018625A1 (en) | 2013-08-07 | 2015-02-12 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
| JP6770958B2 (ja) * | 2014-11-25 | 2020-10-21 | ケーエルエー コーポレイション | ランドスケープの解析および利用 |
| KR102109059B1 (ko) | 2014-11-26 | 2020-05-12 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법, 컴퓨터 제품 및 시스템 |
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| KR102353145B1 (ko) * | 2015-04-10 | 2022-01-18 | 에이에스엠엘 네델란즈 비.브이. | 검사와 계측을 위한 방법 및 장치 |
| JP6524256B2 (ja) * | 2015-04-21 | 2019-06-05 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジ方法及び装置、コンピュータプログラム、並びにリソグラフィシステム |
| TWI656409B (zh) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | 基於輔助電磁場之引入之一階散射測量疊加之新方法 |
| KR102351636B1 (ko) * | 2015-09-21 | 2022-01-13 | 케이엘에이 코포레이션 | 유연적 샘플링을 이용한 공정 제어 방법 및 시스템 |
| US10908512B2 (en) | 2015-12-24 | 2021-02-02 | Asml Netherlands B.V. | Methods of controlling a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus |
| KR102106937B1 (ko) | 2016-02-19 | 2020-05-07 | 에이에스엠엘 네델란즈 비.브이. | 구조체 측정 방법, 검사 장치, 리소그래피 시스템, 디바이스 제조 방법 및 그 안에 사용되는 파장-선택 필터 |
| JP6703612B2 (ja) | 2016-02-26 | 2020-06-03 | エーエスエムエル ネザーランズ ビー．ブイ． | 構造を測定する方法、検査装置、リソグラフィシステム、およびデバイス製造方法 |
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| NL2009508A (en) | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | Metrology method and apparatus, and device manufacturing method. |
| US10107621B2 (en) * | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
| WO2013143814A1 (en) | 2012-03-27 | 2013-10-03 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
| KR101967723B1 (ko) * | 2012-07-05 | 2019-04-10 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피를 위한 계측법 |
| WO2015018625A1 (en) | 2013-08-07 | 2015-02-12 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
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|---|---|
| KR102124204B1 (ko) | 2020-06-18 |
| KR101855243B1 (ko) | 2018-05-04 |
| TW201704898A (zh) | 2017-02-01 |
| WO2015018625A1 (en) | 2015-02-12 |
| US10126662B2 (en) | 2018-11-13 |
| NL2013210A (en) | 2015-02-10 |
| TWI636341B (zh) | 2018-09-21 |
| TW201506554A (zh) | 2015-02-16 |
| JP2018142006A (ja) | 2018-09-13 |
| CN105452962A (zh) | 2016-03-30 |
| TWI563345B (en) | 2016-12-21 |
| CN108398856B (zh) | 2020-10-16 |
| US10725386B2 (en) | 2020-07-28 |
| KR20180049220A (ko) | 2018-05-10 |
| TW201809902A (zh) | 2018-03-16 |
| US20190049860A1 (en) | 2019-02-14 |
| US20160161864A1 (en) | 2016-06-09 |
| IL243854A0 (en) | 2016-04-21 |
| JP6336068B2 (ja) | 2018-06-06 |
| US20190278190A1 (en) | 2019-09-12 |
| CN108398856A (zh) | 2018-08-14 |
| US9910366B2 (en) | 2018-03-06 |
| CN105452962B (zh) | 2018-02-09 |
| KR20160042008A (ko) | 2016-04-18 |
| TWI600981B (zh) | 2017-10-01 |
| JP6577086B2 (ja) | 2019-09-18 |
| US10331041B2 (en) | 2019-06-25 |
| JP2016528549A (ja) | 2016-09-15 |
| US20180196357A1 (en) | 2018-07-12 |
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