KR101855243B1 - 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 - Google Patents

메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 Download PDF

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KR101855243B1
KR101855243B1 KR1020167005967A KR20167005967A KR101855243B1 KR 101855243 B1 KR101855243 B1 KR 101855243B1 KR 1020167005967 A KR1020167005967 A KR 1020167005967A KR 20167005967 A KR20167005967 A KR 20167005967A KR 101855243 B1 KR101855243 B1 KR 101855243B1
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target structure
target
overlay
asymmetry
asymmetric
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KR20160042008A (ko
Inventor
스코트 안데르손 미들브룩스
닐스 헤이펜
헨드릭 얀 히데 스밀데
알렉산더 스트라이예르
마우리츠 반 데르 스하르
마르쿠스 게라르두스 마르티누스 마리아 반 크라이
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에이에스엠엘 네델란즈 비.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020167005967A 2013-08-07 2014-07-18 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 Active KR101855243B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361863150P 2013-08-07 2013-08-07
US61/863,150 2013-08-07
US201461975312P 2014-04-04 2014-04-04
US61/975,312 2014-04-04
PCT/EP2014/065461 WO2015018625A1 (en) 2013-08-07 2014-07-18 Metrology method and apparatus, lithographic system and device manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187012297A Division KR102124204B1 (ko) 2013-08-07 2014-07-18 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20160042008A KR20160042008A (ko) 2016-04-18
KR101855243B1 true KR101855243B1 (ko) 2018-05-04

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KR1020167005967A Active KR101855243B1 (ko) 2013-08-07 2014-07-18 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
KR1020187012297A Active KR102124204B1 (ko) 2013-08-07 2014-07-18 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법

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Country Status (8)

Country Link
US (4) US9910366B2 (enExample)
JP (2) JP6336068B2 (enExample)
KR (2) KR101855243B1 (enExample)
CN (2) CN108398856B (enExample)
IL (1) IL243854B (enExample)
NL (1) NL2013210A (enExample)
TW (3) TWI636341B (enExample)
WO (1) WO2015018625A1 (enExample)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
NL2011477A (en) * 2012-10-10 2014-04-14 Asml Netherlands Bv Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method.
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
KR101855243B1 (ko) 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
CN112698551B (zh) * 2014-11-25 2024-04-23 科磊股份有限公司 分析及利用景观
KR102294349B1 (ko) 2014-11-26 2021-08-26 에이에스엠엘 네델란즈 비.브이. 계측 방법, 컴퓨터 제품 및 시스템
JP6510658B2 (ja) 2015-02-04 2019-05-08 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジの方法及び装置、コンピュータプログラム、並びにリソグラフィシステム
WO2016162228A1 (en) 2015-04-10 2016-10-13 Asml Netherlands B.V. Method and apparatus for inspection and metrology
JP6524256B2 (ja) 2015-04-21 2019-06-05 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法及び装置、コンピュータプログラム、並びにリソグラフィシステム
TWI656409B (zh) * 2015-09-09 2019-04-11 美商克萊譚克公司 基於輔助電磁場之引入之一階散射測量疊加之新方法
KR102351636B1 (ko) * 2015-09-21 2022-01-13 케이엘에이 코포레이션 유연적 샘플링을 이용한 공정 제어 방법 및 시스템
WO2017108453A1 (en) 2015-12-24 2017-06-29 Asml Netherlands B.V. Methods of controlling a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
WO2017140528A1 (en) 2016-02-19 2017-08-24 Asml Netherlands B.V. Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein
CN108700829B (zh) * 2016-02-26 2021-05-18 Asml荷兰有限公司 测量结构的方法、检查设备、光刻系统、器件制造方法
US10615084B2 (en) * 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
IL262114B2 (en) * 2016-04-22 2023-04-01 Asml Netherlands Bv Determining the stack difference and correcting with the help of the stack difference
US10115621B2 (en) 2016-05-13 2018-10-30 Globalfoundries Inc. Method for in-die overlay control using FEOL dummy fill layer
CN109313392B (zh) * 2016-06-10 2021-01-08 Imec 非营利协会 用于半导体制造工艺的计量方法和装置
IL263765B2 (en) 2016-07-15 2023-04-01 Asml Netherlands Bv Method and device for designing a target field for metrology
US10048132B2 (en) 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
EP3293574A1 (en) 2016-09-09 2018-03-14 ASML Netherlands B.V. Metrology method, apparatus and computer program
IL265585B (en) * 2016-09-27 2022-09-01 Asml Netherlands Bv Metrology recipe selection
EP3299890A1 (en) 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
WO2018087207A1 (en) * 2016-11-10 2018-05-17 Asml Netherlands B.V. Design and correction using stack difference
EP3333631A1 (en) 2016-12-06 2018-06-13 ASML Netherlands B.V. Method of measuring a target, metrology apparatus, polarizer assembly
EP3333632A1 (en) 2016-12-08 2018-06-13 ASML Netherlands B.V. Metrology apparatus
US10983005B2 (en) 2016-12-15 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Spectroscopic overlay metrology
EP3336607A1 (en) 2016-12-16 2018-06-20 ASML Netherlands B.V. Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method
EP3358413A1 (en) * 2017-02-02 2018-08-08 ASML Netherlands B.V. Metrology method, apparatus and computer program
US10656535B2 (en) * 2017-03-31 2020-05-19 Imec Vzw Metrology method for a semiconductor manufacturing process
IL270171B2 (en) 2017-04-28 2023-12-01 Asml Netherlands Bv Method and apparatus for metrology and related computer software
WO2018202388A1 (en) 2017-05-03 2018-11-08 Asml Netherlands B.V. Metrology parameter determination and metrology recipe selection
EP3399371A1 (en) * 2017-05-05 2018-11-07 ASML Netherlands B.V. Method of measuring a parameter of interest, device manufacturing method, metrology apparatus, and lithographic system
KR102432667B1 (ko) 2017-05-15 2022-08-17 삼성전자주식회사 오버레이 보정방법 및 제어 시스템
EP3422103A1 (en) 2017-06-26 2019-01-02 ASML Netherlands B.V. Method of determining a performance parameter of a process
EP3422105A1 (en) * 2017-06-30 2019-01-02 ASML Netherlands B.V. Metrology parameter determination and metrology recipe selection
EP3435162A1 (en) 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program
EP3454126A1 (en) 2017-09-08 2019-03-13 ASML Netherlands B.V. Method for estimating overlay
JP6979529B2 (ja) * 2017-09-11 2021-12-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィプロセスにおける計測
EP3462239A1 (en) * 2017-09-27 2019-04-03 ASML Netherlands B.V. Metrology in lithographic processes
EP3457211A1 (en) * 2017-09-13 2019-03-20 ASML Netherlands B.V. A method of aligning a pair of complementary diffraction patterns and associated metrology method and apparatus
WO2019057578A1 (en) 2017-09-22 2019-03-28 Asml Netherlands B.V. METHOD FOR DETERMINING A PARAMETER OF PATTERN CREATION PROCESS
EP3460574A1 (en) 2017-09-22 2019-03-27 ASML Netherlands B.V. Method to determine a patterning process parameter
US10795268B2 (en) 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
CN111279268B (zh) * 2017-10-26 2022-04-01 Asml荷兰有限公司 确定所关注的参数的值的方法、清除包含关于所关注的参数的信息的信号的方法
EP3492985A1 (en) 2017-12-04 2019-06-05 ASML Netherlands B.V. Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
EP3518040A1 (en) 2018-01-30 2019-07-31 ASML Netherlands B.V. A measurement apparatus and a method for determining a substrate grid
JP7227988B2 (ja) * 2018-02-27 2023-02-22 エーエスエムエル ネザーランズ ビー．ブイ． 基板上の１つ又は複数の構造の特性を算出するメトロロジ装置及び方法
NL2021848A (en) 2018-04-09 2018-11-06 Stichting Vu Holographic metrology apparatus.
EP3557327A1 (en) * 2018-04-18 2019-10-23 ASML Netherlands B.V. Method of determining a value of a parameter of interest of a target formed by a patterning process
WO2019233738A1 (en) 2018-06-08 2019-12-12 Asml Netherlands B.V. Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
EP3579052A1 (en) 2018-06-08 2019-12-11 ASML Netherlands B.V. Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
NL2021852A (en) 2018-08-01 2018-11-09 Asml Netherlands Bv Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
EP3605230A1 (en) 2018-08-01 2020-02-05 Stichting VU Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
WO2020058388A1 (en) 2018-09-19 2020-03-26 Asml Netherlands B.V. Metrology method and apparatus thereof
KR102817449B1 (ko) 2018-12-31 2025-06-05 에이에스엠엘 네델란즈 비.브이. 계측 방법
CN113260924B (zh) 2018-12-31 2025-02-18 Asml荷兰有限公司 用于重叠量测的方法及其设备
EP3731018A1 (en) 2019-04-23 2020-10-28 ASML Netherlands B.V. A method for re-imaging an image and associated metrology apparatus
KR102841633B1 (ko) 2019-07-10 2025-07-31 삼성전자주식회사 오버레이 보정 방법, 및 그 보정 방법을 기초로 한 포토리소그라피 방법, 반도체 소자 제조방법 및 스캐너 시스템
EP3770682A1 (en) 2019-07-25 2021-01-27 ASML Netherlands B.V. Method and system for determining information about a target structure
US12209994B2 (en) 2019-08-14 2025-01-28 Asml Netherlands B.V. Method and metrology tool for determining information about a target structure, and cantilever probe
CN114830043B (zh) 2019-12-17 2025-05-30 Asml荷兰有限公司 暗场数字全息显微镜和相关联的量测方法
EP3839635A1 (en) 2019-12-17 2021-06-23 ASML Netherlands B.V. Dark field digital holographic microscope and associated metrology method
EP3876036A1 (en) 2020-03-04 2021-09-08 ASML Netherlands B.V. Vibration isolation system and associated applications in lithography
JP7468630B2 (ja) * 2020-04-13 2024-04-16 株式会社ニコン 計測装置、露光装置、および計測方法
US12429781B2 (en) 2020-06-24 2025-09-30 Asml Netherlands B.V. Metrology method and associated metrology and lithographic apparatuses
KR102887499B1 (ko) 2020-07-09 2025-11-17 에이에스엠엘 네델란즈 비.브이. 계측 방법 및 장치, 그리고 컴퓨터 프로그램
EP3964892A1 (en) 2020-09-02 2022-03-09 Stichting VU Illumination arrangement and associated dark field digital holographic microscope
WO2022113338A1 (ja) * 2020-11-30 2022-06-02 日本電気株式会社 情報処理装置、情報処理方法、及び、記録媒体
EP4224254A1 (en) 2022-02-04 2023-08-09 ASML Netherlands B.V. Metrology method and associated metrology device
EP4246231A1 (en) 2022-03-18 2023-09-20 Stichting VU A method for determining a vertical position of a structure on a substrate and associated apparatuses
WO2023174648A1 (en) 2022-03-18 2023-09-21 Stichting Vu Illumination arrangement for a metrology device and associated method
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CN114678282B (zh) * 2022-05-27 2022-08-02 湖北三维半导体集成创新中心有限责任公司 一种键合补偿方法及装置、芯片再布线方法、键合结构
EP4318131A1 (en) 2022-08-01 2024-02-07 ASML Netherlands B.V. Sensor module, illuminator, metrology device and associated metrology method
EP4332678A1 (en) 2022-09-05 2024-03-06 ASML Netherlands B.V. Holographic metrology apparatus and method
WO2025131523A1 (en) 2023-12-21 2025-06-26 Asml Netherlands B.V. Metrology method for a digital holographic microscope and associated computer program
WO2025203521A1 (ja) * 2024-03-28 2025-10-02 株式会社ニコン マーク計測方法、計測装置、露光装置、演算装置、プログラム及び記憶媒体
WO2025233088A1 (en) 2024-05-08 2025-11-13 Asml Netherlands B.V. Semiconductor bonding alignment systems and methods
CN118299285B (zh) * 2024-06-06 2024-08-16 华芯程(杭州)科技有限公司 多重图形蚀刻补偿方法、装置、介质、程序产品及终端

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011032535A1 (de) 2009-09-18 2011-03-24 Sma Solar Technology Ag Wechselrichter
US20110255066A1 (en) 2008-06-11 2011-10-20 Asml Netherlands B.V. Apparatus and Method for Inspecting a Substrate
WO2013143814A1 (en) 2012-03-27 2013-10-03 Asml Netherlands B.V. Metrology method and apparatus, lithographic system and device manufacturing method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7408642B1 (en) * 2006-02-17 2008-08-05 Kla-Tencor Technologies Corporation Registration target design for managing both reticle grid error and wafer overlay
US7704850B2 (en) * 2006-09-08 2010-04-27 Asml Netherlands B.V. Semiconductor device for measuring an overlay error, method for measuring an overlay error, lithographic apparatus and device manufacturing method
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
US8189202B2 (en) 2009-08-04 2012-05-29 Zygo Corporation Interferometer for determining overlay errors
CN102483582B (zh) * 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
JP6008851B2 (ja) * 2010-07-19 2016-10-19 エーエスエムエル ネザーランズ ビー．ブイ． オーバレイ誤差を決定する方法及び装置
CN103201682B (zh) * 2010-11-12 2015-06-17 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
IL217843A (en) * 2011-02-11 2016-11-30 Asml Netherlands Bv A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device
NL2009294A (en) 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
NL2009508A (en) 2011-10-24 2013-04-25 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
US10107621B2 (en) * 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
JP6133980B2 (ja) 2012-07-05 2017-05-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィのためのメトロロジ
KR101855243B1 (ko) 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110255066A1 (en) 2008-06-11 2011-10-20 Asml Netherlands B.V. Apparatus and Method for Inspecting a Substrate
WO2011032535A1 (de) 2009-09-18 2011-03-24 Sma Solar Technology Ag Wechselrichter
WO2013143814A1 (en) 2012-03-27 2013-10-03 Asml Netherlands B.V. Metrology method and apparatus, lithographic system and device manufacturing method

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