TWI636341B - 量測微影程序之參數之方法 - Google Patents
量測微影程序之參數之方法 Download PDFInfo
- Publication number
- TWI636341B TWI636341B TW106126036A TW106126036A TWI636341B TW I636341 B TWI636341 B TW I636341B TW 106126036 A TW106126036 A TW 106126036A TW 106126036 A TW106126036 A TW 106126036A TW I636341 B TWI636341 B TW I636341B
- Authority
- TW
- Taiwan
- Prior art keywords
- asymmetry
- target structure
- measurement
- target
- substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361863150P | 2013-08-07 | 2013-08-07 | |
| US61/863,150 | 2013-08-07 | ||
| US201461975312P | 2014-04-04 | 2014-04-04 | |
| US61/975,312 | 2014-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201809902A TW201809902A (zh) | 2018-03-16 |
| TWI636341B true TWI636341B (zh) | 2018-09-21 |
Family
ID=51211228
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106126036A TWI636341B (zh) | 2013-08-07 | 2014-08-04 | 量測微影程序之參數之方法 |
| TW105134143A TWI600981B (zh) | 2013-08-07 | 2014-08-04 | 度量衡方法及裝置、微影系統及元件製造方法 |
| TW103126643A TWI563345B (en) | 2013-08-07 | 2014-08-04 | Metrology method and apparatus, lithographic system and device manufacturing method |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105134143A TWI600981B (zh) | 2013-08-07 | 2014-08-04 | 度量衡方法及裝置、微影系統及元件製造方法 |
| TW103126643A TWI563345B (en) | 2013-08-07 | 2014-08-04 | Metrology method and apparatus, lithographic system and device manufacturing method |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9910366B2 (enExample) |
| JP (2) | JP6336068B2 (enExample) |
| KR (2) | KR101855243B1 (enExample) |
| CN (2) | CN108398856B (enExample) |
| IL (1) | IL243854B (enExample) |
| NL (1) | NL2013210A (enExample) |
| TW (3) | TWI636341B (enExample) |
| WO (1) | WO2015018625A1 (enExample) |
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| NL2011477A (en) * | 2012-10-10 | 2014-04-14 | Asml Netherlands Bv | Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method. |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| WO2015018625A1 (en) | 2013-08-07 | 2015-02-12 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
| SG11201703585RA (en) * | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
| KR102109059B1 (ko) | 2014-11-26 | 2020-05-12 | 에이에스엠엘 네델란즈 비.브이. | 계측 방법, 컴퓨터 제품 및 시스템 |
| JP6510658B2 (ja) | 2015-02-04 | 2019-05-08 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジの方法及び装置、コンピュータプログラム、並びにリソグラフィシステム |
| KR102028712B1 (ko) | 2015-04-10 | 2019-10-04 | 에이에스엠엘 네델란즈 비.브이. | 검사와 계측을 위한 방법 및 장치 |
| JP6524256B2 (ja) * | 2015-04-21 | 2019-06-05 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジ方法及び装置、コンピュータプログラム、並びにリソグラフィシステム |
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| WO2025261742A1 (en) | 2024-06-20 | 2025-12-26 | Stichting Nederlandse Wetenschappelijk Onderzoek Instituten | Method of improving an image |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120123581A1 (en) * | 2010-11-12 | 2012-05-17 | Asml Netherlands B.V. | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method |
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| US20120123581A1 (en) * | 2010-11-12 | 2012-05-17 | Asml Netherlands B.V. | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method |
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| US20160161864A1 (en) | 2016-06-09 |
| JP2016528549A (ja) | 2016-09-15 |
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| CN105452962A (zh) | 2016-03-30 |
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| TW201506554A (zh) | 2015-02-16 |
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| KR101855243B1 (ko) | 2018-05-04 |
| CN108398856A (zh) | 2018-08-14 |
| TW201704898A (zh) | 2017-02-01 |
| US10126662B2 (en) | 2018-11-13 |
| US10331041B2 (en) | 2019-06-25 |
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| US20180196357A1 (en) | 2018-07-12 |
| US20190278190A1 (en) | 2019-09-12 |
| KR20160042008A (ko) | 2016-04-18 |
| US20190049860A1 (en) | 2019-02-14 |
| KR102124204B1 (ko) | 2020-06-18 |
| JP6336068B2 (ja) | 2018-06-06 |
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