CN108257927B - 一种半导体存储器件 - Google Patents

一种半导体存储器件 Download PDF

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CN108257927B
CN108257927B CN201810045337.2A CN201810045337A CN108257927B CN 108257927 B CN108257927 B CN 108257927B CN 201810045337 A CN201810045337 A CN 201810045337A CN 108257927 B CN108257927 B CN 108257927B
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silica gel
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庄清梅
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Shenzhen Jingcun Technology Co., Ltd
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Abstract

本发明提供了一种半导体存储器件，本发明的散热金属板外围的边缘线为所述堆叠体在所述散热金属板上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板上的投影线向外扩张所述导热硅胶片的厚度长度所得的扩张线，该设置最大程度的提高散热，这是由于热传导角度为45度所导致的，其也可以实现节省材料的目的；散热金属板侧面的凹槽可以防止金属板的脱落，且可以防止堆叠体的翘曲；梯形截面的导热硅胶片在实现导热的同时最大程度的节省导热硅胶片，且有利于树脂的密封。

Description

一种半导体存储器件
技术领域
本发明涉及半导体封装领域，具体涉及一种半导体存储器件。
背景技术
现有的半导体存储器需要长时间工作，会产生大量的热量，往往需要散热结构来保证封装体的热扩散速度，但是关于该散热结构的具体构成以及具体尺寸均是本领域技术人员所未有突破的，如何实现散热的同时最大程度的节省材料是亟待解决的问题。
发明内容
基于解决上述问题，本发明提供了一种半导体存储器件，其包括：
中介板，其具有相对的第一表面和第二表面；
存储芯片堆叠体，所述堆叠体设置于所述第一表面上，具有上下堆叠的多个存储芯片，所述多个存储芯片中设有通孔，所述多个存储芯片的相邻的两个通过第一焊球电连接所述通孔实现芯片间电连接，并且，所述多个存储芯片的每一个的长度为L；
导热硅胶片，其粘附于所述堆叠体上，其截面为长方形，俯视为正方形，所述导热硅胶片的厚度为d；
散热金属板，其粘附于所述导热硅胶片上，其截面为长方形，俯视为正方形，所述散热金属板的宽度为W，并且所述散热金属板外围的边缘线为所述堆叠体在所述散热金属板上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板上的投影线向外扩张所述导热硅胶片的厚度长度所得的扩张线；
封装树脂，覆盖所述第一表面、所述堆叠体的侧面、所述导热硅胶片的侧面以及所述散热金属板的侧面。
本发明还提供了另一种半导体存储器件，其包括：
中介板，其具有相对的第一表面和第二表面；
存储芯片堆叠体，所述堆叠体设置于所述第一表面上，具有上下堆叠的多个存储芯片，所述多个存储芯片中设有通孔，所述多个存储芯片的相邻的两个通过第一焊球电连接所述通孔实现芯片间电连接，并且，所述多个存储芯片的每一个的长度为L；
导热硅胶片，其粘附于所述堆叠体上，其截面为等腰梯形，俯视为正方形，所述导热硅胶片的厚度为d；
散热金属板，其粘附于所述导热硅胶片上，其截面为长方形，俯视为正方形，所述散热金属板的宽度为W，并且所述散热金属板外围的边缘线为所述堆叠体在所述散热金属板上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板上的投影线向外扩张所述导热硅胶片的厚度长度所得的扩张线，所述等腰梯形的长边的长度等于所述散热金属板的宽度W，所述等腰梯形的短边的长度大于或等于L；
封装树脂，覆盖所述第一表面、所述堆叠体的侧面、所述导热硅胶片的侧面以及所述散热金属板的侧面。
根据本发明的实施例，W＝L+2d。
根据本发明的实施例，所述封装树脂的上表面与所述散热金属板的上表面齐平。
根据本发明的实施例，所述多个存储芯片的相邻的两个之间设有底部填充胶。
根据本发明的实施例，所述散热金属板的侧面上设有凹槽，所述凹槽的深度h小于d。
根据本发明的实施例，所述封装树脂填充所述凹槽。
根据本发明的实施例，所述中介板的第二表面设有多个第二焊球。
本发明的优点如下：
(1)本发明的散热金属板外围的边缘线为所述堆叠体在所述散热金属板上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板上的投影线向外扩张所述导热硅胶片的厚度长度所得的扩张线，该设置最大程度的提高散热，这是由于热传导角度为45度所导致的，其也可以实现节省材料的目的；
(2)散热金属板侧面的凹槽可以防止金属板的脱落，且可以防止堆叠体的翘曲；
(3)梯形截面的导热硅胶片在实现导热的同时最大程度的节省导热硅胶片，且有利于树脂的密封。
附图说明
图1为本发明的半导体存储器件的剖面图；
图2为堆叠体与散热金属板的俯视图；
图3为另一实施例的半导体存储器件的剖面图。
具体实施方式
参见图1-2，本发明的半导体存储器件，其包括：
中介板1，其具有相对的第一表面和第二表面；
存储芯片堆叠体，所述堆叠体设置于所述第一表面上，具有上下堆叠的多个存储芯片2，所述多个存储芯片2中设有通孔6，所述多个存储芯片2的相邻的两个通过第一焊球7电连接所述通孔6实现芯片间电连接，并且，所述多个存储芯片2的每一个的长度为L；
导热硅胶片3，其粘附于所述堆叠体上，其截面为长方形，俯视为正方形，所述导热硅胶片3的厚度为d；
散热金属板4，其粘附于所述导热硅胶片3上，其截面为长方形，俯视为正方形，所述散热金属板4的宽度为W，并且所述散热金属板4外围的边缘线为所述堆叠体在所述散热金属板4上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板4上的投影线向外扩张d长度所得的扩张线，即W＝L+2d；此时图1中的夹角A为45度；
封装树脂9，覆盖所述第一表面、所述堆叠体的侧面、所述导热硅胶片3的侧面以及所述散热金属板4的侧面。
其中，所述封装树脂9的上表面与所述散热金属板4的上表面齐平；所述多个存储芯片2的相邻的两个之间设有底部填充胶5；所述中介板1的第二表面设有多个第二焊球8。
参见图3，为了增强散热，根据本发明的另一种半导体存储器件，其包括：
中介板1，其具有相对的第一表面和第二表面；
存储芯片堆叠体，所述堆叠体设置于所述第一表面上，具有上下堆叠的多个存储芯片2，所述多个存储芯片2中设有通孔6，所述多个存储芯片2的相邻的两个通过第一焊球7电连接所述通孔6实现芯片间电连接，并且，所述多个存储芯片2的每一个的长度为L；
导热硅胶片3，其粘附于所述堆叠体上，其截面为等腰梯形，俯视为正方形，所述导热硅胶片3的厚度为d；
散热金属板4，其粘附于所述导热硅胶片3上，其截面为长方形，俯视为正方形，所述散热金属板4的宽度为W，并且所述散热金属板4外围的边缘线为所述堆叠体在所述散热金属板4上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板4上的投影线向外扩张d长度所得的扩张线，即W＝L+2d，所述等腰梯形的长边的长度等于所述散热金属板4的宽度W，所述等腰梯形的短边的长度大于或等于L，此时等腰梯形的斜边与长边或短边的夹角B大于或等于45度；
封装树脂9，覆盖所述第一表面、所述堆叠体的侧面、所述导热硅胶片3的侧面以及所述散热金属板4的侧面。
其中，所述封装树脂3的上表面与所述散热金属板4的上表面齐平，所述多个存储芯片2的相邻的两个之间设有底部填充胶5。
根据本发明的实施例，所述散热金属板4的侧面上设有凹槽10，所述凹槽10的深度h小于d，所述封装树脂9填充所述凹槽10。
最后应说明的是：显然，上述实施例仅仅是为清楚地说明本发明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。

Claims (7)

1.一种半导体存储器件，其包括：
中介板，其具有相对的第一表面和第二表面；
存储芯片堆叠体，所述堆叠体设置于所述第一表面上，具有上下堆叠的多个存储芯片，所述多个存储芯片中设有通孔，所述多个存储芯片的相邻的两个通过第一焊球电连接所述通孔实现芯片间电连接，并且，所述多个存储芯片的每一个的长度为L；
导热硅胶片，其粘附于所述堆叠体上，其截面为长方形，俯视为正方形，所述导热硅胶片的厚度为d；
散热金属板，其粘附于所述导热硅胶片上，其截面为长方形，俯视为正方形，所述散热金属板的宽度为W，并且所述散热金属板外围的边缘线为所述堆叠体在所述散热金属板上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板上的投影线向外扩张所述导热硅胶片的厚度d长度所得的扩张线； 其中W＝L+2d；
封装树脂，覆盖所述第一表面、所述堆叠体的侧面、所述导热硅胶片的侧面以及所述散热金属板的侧面。
2.一种半导体存储器件，其包括：
中介板，其具有相对的第一表面和第二表面；
存储芯片堆叠体，所述堆叠体设置于所述第一表面上，具有上下堆叠的多个存储芯片，所述多个存储芯片中设有通孔，所述多个存储芯片的相邻的两个通过第一焊球电连接所述通孔实现芯片间电连接，并且，所述多个存储芯片的每一个的长度为L；
导热硅胶片，其粘附于所述堆叠体上，其截面为等腰梯形，俯视为正方形，所述导热硅胶片的厚度为d；
散热金属板，其粘附于所述导热硅胶片上，其截面为长方形，俯视为正方形，所述散热金属板的宽度为W，并且所述散热金属板外围的边缘线为所述堆叠体在所述散热金属板上的投影线的扩张线，所述扩张线为所述堆叠体在所述散热金属板上的投影线向外扩张所述导热硅胶片的厚度d长度所得的扩张线，所述等腰梯形的长边的长度等于所述散热金属板的宽度W，所述等腰梯形的短边的长度等于L；其中W＝L+2d；
封装树脂，覆盖所述第一表面、所述堆叠体的侧面、所述导热硅胶片的侧面以及所述散热金属板的侧面。
3.根据权利要求1或2所述的半导体存储器件，其特征在于：所述封装树脂的上表面与所述散热金属板的上表面齐平。
4.根据权利要求1或2的半导体存储器件，其特征在于：所述多个存储芯片的相邻的两个之间设有底部填充胶。
5.根据权利要求1或2所述的半导体存储器件，其特征在于：所述散热金属板的侧面上设有凹槽，所述凹槽的深度h小于d。
6.根据权利要求5所述的半导体存储器件，其特征在于：所述封装树脂填充所述凹槽。
7.根据权利要求1或2所述的半导体存储器件，其特征在于：所述中介板的第二表面设有多个第二焊球。
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