CN108109915A - Radio frequency triode and preparation method thereof - Google Patents
Radio frequency triode and preparation method thereof Download PDFInfo
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- CN108109915A CN108109915A CN201711396254.XA CN201711396254A CN108109915A CN 108109915 A CN108109915 A CN 108109915A CN 201711396254 A CN201711396254 A CN 201711396254A CN 108109915 A CN108109915 A CN 108109915A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 108
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 56
- 229920005591 polysilicon Polymers 0.000 claims abstract description 55
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 53
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 41
- 238000000407 epitaxy Methods 0.000 claims abstract description 40
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims description 27
- 238000002513 implantation Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000000717 retained effect Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 84
- 230000035755 proliferation Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The present invention relates to a kind of radio frequency triodes and preparation method thereof.The radio frequency triode that the production method obtains includes silicon substrate, the N-type epitaxy layer being formed on the silicon substrate, it is formed at two first p-type high-doped zones on the N-type epitaxy layer surface, the p-type doped regions being formed between described two p-type high-doped zones, it is formed in the N-type epitaxy layer of p-type high-doped zone both sides and has angular field oxide, it is formed at the N-type region domain on p-type doped regions surface, the first polysilicon and silicon dioxide layer being sequentially formed above the field oxide and the p-type high-doped zone, it is formed at side wall of the p-type high-doped zone adjacent to the p-type doped regions, first polysilicon and the top of silica and the silicon nitride layer on side wall and another silicon dioxide layer, and it is formed at the second polysilicon on the N-type region domain.
Description
【Technical field】
The present invention relates to semiconductor fabrication process technical fields, particularly, are related to a kind of radio frequency triode and its making side
Method.
【Background technology】
Existing radio frequency triode is when forming p-type high-doped zone and p-type doped regions, because the transverse direction of p-type high-doped zone
Diffusion influences whether p-type doped regions, this can seriously affect p-type doped regions concentration.P-type doped regions work for device
Amplification coefficient is very crucial.Conventional way is exactly that it is sufficiently large that guarantee p-type doped regions obtain width so that in p-type doped regions
N+ areas away from p-type high-doped zone.But such that device becomes large-sized so that the area of individual devices becomes larger, system
Cause this rise.
Specifically, when existing manufacturing process flow makes radio frequency triode, due to silica and etching polysilicon
Afterwards, in the p-type doped regions that injection is lightly doped, then it is heat-treated so that the dense p type impurity in polysilicon is diffused into N-
P-type high-doped zone is formed in N-type epitaxy layer.Since the p type impurity in polysilicon is very dense, so the p-type diffused out is highly doped
Miscellaneous area can influence p-type doped regions in horizontal proliferation so that the amplification coefficient of device work will be affected, and influence device
Part performance and reduction device reliability.
【The content of the invention】
For existing radio frequency triode manufacturing process flow and device architecture the problem of, the present invention proposes a kind of new penetrates
Frequency triode and preparation method thereof solves above-mentioned at least one technical problem, and does not increase excessive manufacture cost.
A kind of production method of radio frequency triode, comprises the following steps：
Silicon substrate is provided, N-type epitaxy layer is formed on the silicon substrate；
The first silicon dioxide layer and the first silicon nitride layer are sequentially formed in the N-type epitaxy layer；
Photoetching and etching are carried out to first silicon nitride layer, remove the partial nitridation layer at both ends so as to form open region
Domain；
The growth of field oxide is carried out to the part of silica layer of the open area and the neighbouring open area, from
And formed between the first silicon nitride layer both ends and the N-type epitaxy layer and have angular field oxide, the field oxidation
The wedge angle of layer corresponds to first silicon dioxide layer of another part, and the N-type epitaxy layer includes the neighbouring field oxide
Turning；
Remove first silicon nitride layer and first silicon dioxide layer；
The first polysilicon and the second silicon dioxide layer are sequentially formed on the N-type epitaxy layer surface, to first polycrystalline
Silicon carries out the first p-type ion implanting；
Photoetching and etching are carried out to second silicon dioxide layer and the first polysilicon, so as to be formed through the described 2nd 2
Silicon oxide layer and first polysilicon simultaneously extend to the groove in the N-type epitaxy layer；
It is heat-treated and the second p-type ion implanting so that the p-type ion in first polysilicon is to the N-type
Epitaxial layer is spread, so as to which the N-type epitaxy layer surface below first polysilicon forms p-type high-doped zone and in the ditch
N-type epitaxy layer surface below slot forms p-type doped regions；
The second silicon nitride layer and are sequentially formed on the p-type doped regions at groove and on first polysilicon
Three silicon dioxide layers；
3rd silicon dioxide layer is performed etching, so as to remove the portion above the second silicon nitride layer on the groove
Point the 3rd silicon dioxide layer, the 3rd silicon dioxide layer on the outside of the trenched side-wall and the groove are retained；
Remove the second silicon nitride layer of part of the channel bottom so that the part exposure of the p-type doped regions；
The second polysilicon is formed on the p-type doped regions, second polysilicon is heat-treated so that described
The N-type impurity of second polysilicon diffuses to p-type doped regions surface, so as to form N-type on p-type doped regions surface
Region.
In one embodiment, scope of the growth temperature of the field oxide at 700 degrees Celsius to 1200 degrees Celsius
It is interior, in the range of growth thickness is 0.4um to 2um.
In one embodiment, the step of removing first silicon nitride layer and first silicon dioxide layer includes：
First silicon nitride layer is first got rid of using the concentrated phosphoric acid of heat；And first silica is removed using hydrofluoric acid solution again
Layer.
In one embodiment, scope of the formation temperature of first polysilicon at 400 degrees Celsius to 900 degrees Celsius
Interior, thickness is between the scope of 0.1um-0.5um；The thickness of second silicon dioxide layer is in the scope of 0.02um to 0.1um
It is interior.
In one embodiment, the thickness of second silicon dioxide layer is in the range of 0.02um to 0.1um.
In one embodiment, in the first time p-type ion implanting, injection ion includes B or BF2, injectant
It measures in the range of every square centimeter 1 16 powers of 14 powers to every square centimeter 1, Implantation Energy is in 50KEV to 200KEV
In the range of.
In one embodiment, in second of p-type ion implanting, injection ion includes B or BF2, injectant
It measures in the range of every square centimeter 1 14 powers of 12 powers to every square centimeter 1, Implantation Energy is in 20KEV to 200KEV
In the range of.
In one embodiment, model of the formation temperature of second polysilicon at 400 degrees Celsius to 1000 degrees Celsius
In enclosing, thickness is in the range of 0.02um to 2um；Second polysilicon is carried out in N-type ion implanting step, injects ion
Including phosphorus or arsenic, implantation dosage injects energy in the range of every square centimeter 1 16 powers of 15 powers to every square centimeter 5
Amount is in the range of 20KEV to 200KEV.
In one embodiment, depth of the groove in the N-type epitaxy layer is in the scope of 0.2um to 0.5um
It is interior.
A kind of radio frequency triode including silicon substrate, the N-type epitaxy layer being formed on the silicon substrate, is formed at the N
Two the first p-type high-doped zones of type epi-layer surface, the p-type doped regions being formed between described two p-type high-doped zones,
It is formed in the N-type epitaxy layer of p-type high-doped zone both sides and has angular field oxide, is formed at the p-type
The N-type region domain on doped regions surface, the first polysilicon being sequentially formed above the field oxide and the p-type high-doped zone
With silicon dioxide layer, be formed at the p-type high-doped zone adjacent to the side walls of the p-type doped regions, first polysilicon with
Silicon nitride layer and another silicon dioxide layer on the top of silica and side wall and be formed on the N-type region domain second
Polysilicon.
Compared to the prior art, in radio frequency triode of the present invention and preparation method thereof, when the first polysilicon is etched,
Silicon substrate is also etched away to some simultaneously and forms groove so that it is low-doped that the horizontal proliferation of p-type high-doped zone can not influence p-type
Area so as to avoid the problem that the device performance that extends influence, promotes device reliability.
【Description of the drawings】
To describe the technical solutions in the embodiments of the present invention more clearly, used in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the flow chart of the production method of radio frequency triode of the present invention.
Fig. 2-Figure 13 is the structure diagram of each step of the production method of radio frequency triode shown in Fig. 1.
Main element symbol description
P-type doped regions：P-type doped regions
P-type high-doped zone：P-type high-doped zone
N-type region domain：N+ areas
【Specific embodiment】
The technical solution in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only the part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
All other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
- Figure 13 is please referred to Fig.1, Fig. 1 is the flow chart of the production method of radio frequency triode of the present invention, and Fig. 2-Figure 13 is Fig. 1
The structure diagram of each step of the production method of shown radio frequency triode.The production method of the radio frequency triode includes following
Step.
Referring to Fig. 2, providing silicon substrate, N-type epitaxy layer is formed on the silicon substrate by step S1.The N-type epitaxy layer
For N-type epitaxy layer.The silicon substrate is N-type substrate.
Step S2, referring to Fig. 3, sequentially forming the first silicon dioxide layer and the first silicon nitride in the N-type epitaxy layer
Layer.
Step S3 referring to Fig. 4, carrying out photoetching and etching to first silicon nitride layer, removes the partial nitridation at both ends
Layer is so as to forming open area.
Step S4, referring to Fig. 5, being carried out to the part of silica layer of the open area and the neighbouring open area
The growth of field oxide has angular field so as to be formed between the first silicon nitride layer both ends and the N-type epitaxy layer
Oxide layer, the wedge angle of the field oxide correspond to first silicon dioxide layer of another part, and the N-type epitaxy layer includes neighbour
The turning of the nearly field oxide.Wherein, scope of the growth temperature of the field oxide at 700 degrees Celsius to 1200 degrees Celsius
It is interior, in the range of growth thickness is 0.4um to 2um.
Step S5, referring to Fig. 6, removing first silicon nitride layer and first silicon dioxide layer.The step S5
Including：First silicon nitride layer is first got rid of using the concentrated phosphoric acid of heat；And the titanium dioxide is being removed using hydrofluoric acid solution
Silicon layer.
Step S6, referring to Fig. 7, sequentially forming the first polysilicon and the second silica on the N-type epitaxy layer surface
Layer carries out the first p-type ion implanting to first polysilicon.The formation temperature of first polysilicon at 400 degrees Celsius extremely
In the range of 900 degrees Celsius, thickness is between the scope of 0.1um-0.5um；The thickness of second silicon dioxide layer exists
In the range of 0.02um to 0.1um.The thickness of second silicon dioxide layer is in the range of 0.02um to 0.1um.Described
In p-type ion implanting, injection ion include B or BF2, implantation dosage every square centimeter 1 14 powers to every square
In the range of centimetre 1 16 powers, Implantation Energy is in the range of 50KEV to 200KEV.
Step S7, referring to Fig. 8, photoetching and etching are carried out to second silicon dioxide layer and the first polysilicon, so as to
It is formed through second silicon dioxide layer and first polysilicon and extends to the groove in the N-type epitaxy layer.It is described
Depth of the groove in the N-type epitaxy layer is in the range of 0.2um to 0.5um.
Step S8, referring to Fig. 9, being heat-treated and the second p-type ion implanting so that the P in first polysilicon
Type ion is spread to the N-type epitaxy layer, so as to which the N-type epitaxy layer surface below first polysilicon forms p-type height
Doped region and form p-type doped regions on the N-type epitaxy layer surface of the beneath trenches.Second of p-type ion implanting
In, injection ion includes B or BF2,12 powers to every square centimeter 1 14 powers of the implantation dosage every square centimeter 1
In the range of, Implantation Energy is in the range of 20KEV to 200KEV.As it can be seen that the p-type high-doped zone and the p-type doped regions
Between form transition region.
Step S9, referring to Fig. 10, sequentially shape on the p-type doped regions at groove and on first polysilicon
Into the second silicon nitride layer and the 3rd silicon dioxide layer.
Step S10, please refers to Fig.1 1, and the 3rd silicon dioxide layer is performed etching, so as to remove on the groove
The 3rd silicon dioxide layer of part above second silicon nitride layer, the 3rd silica on the outside of the trenched side-wall and the groove
Layer is retained.
Step S11, please refers to Fig.1 2, removes the second silicon nitride layer of part of the channel bottom so that the p-type low-mix
The part exposure in miscellaneous area.
Step S12, please refers to Fig.1 3, and the second polysilicon is formed on the p-type doped regions, to second polysilicon
It is heat-treated so that the N-type impurity of second polysilicon diffuses to p-type doped regions surface, so as in the p-type
Doped regions surface forms N-type region domain.Scope of the formation temperature of second polysilicon at 400 degrees Celsius to 1000 degrees Celsius
Interior, thickness is in the range of 0.02um to 2um；Second polysilicon is carried out in N-type ion implanting step, injects ion bag
Include phosphorus or arsenic, implantation dosage is in the range of every square centimeter 1 16 powers of 15 powers to every square centimeter 5, Implantation Energy
In the range of 20KEV to 200KEV.The N-type region domain is N-type highly doped regions.
Wherein, as shown in figure 13, the radio frequency triode includes silicon substrate, the N-type extension being formed on the silicon substrate
Layer is formed at two first p-type high-doped zones on the N-type epitaxy layer surface, is formed between described two p-type high-doped zones
P-type doped regions, be formed in the N-type epitaxy layer of p-type high-doped zone both sides and have angular field oxide,
Be formed at the N-type region domain on p-type doped regions surface, be sequentially formed at the field oxide and the p-type high-doped zone on
The first polysilicon and the silicon dioxide layer of side are formed at side wall of the p-type high-doped zone adjacent to the p-type doped regions, institute
It states the top of the first polysilicon and silica and the silicon nitride layer on side wall and another silicon dioxide layer and is formed at the N
The second polysilicon on type region.Transition region is formed between the p-type high-doped zone and the p-type doped regions.
Compared to the prior art, in radio frequency triode of the present invention and preparation method thereof, when the first polysilicon is etched,
Silicon substrate is also etched away to some simultaneously and forms groove so that it is low-doped that the horizontal proliferation of p-type high-doped zone can not influence p-type
Area so as to avoid the problem that the device performance that extends influence, promotes device reliability.
Above-described is only embodiments of the present invention, it should be noted here that for those of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to the protection model of the present invention
It encloses.
Claims (10)
1. a kind of production method of radio frequency triode, which is characterized in that the production method comprises the following steps：
Silicon substrate is provided, N-type epitaxy layer is formed on the silicon substrate；
The first silicon dioxide layer and the first silicon nitride layer are sequentially formed in the N-type epitaxy layer；
Photoetching and etching are carried out to first silicon nitride layer, remove the partial nitridation layer at both ends so as to form open area；
The growth of field oxide is carried out to the part of silica layer of the open area and the neighbouring open area, thus
It is formed between the first silicon nitride layer both ends and the N-type epitaxy layer and has angular field oxide, the field oxide
Wedge angle corresponds to first silicon dioxide layer of another part, and the N-type epitaxy layer includes the turning of the neighbouring field oxide；
Remove first silicon nitride layer and first silicon dioxide layer；
Sequentially form the first polysilicon and the second silicon dioxide layer on the N-type epitaxy layer surface, to first polysilicon into
Row the first p-type ion implanting；
Photoetching and etching are carried out to second silicon dioxide layer and the first polysilicon, so as to be formed through second titanium dioxide
Silicon layer and first polysilicon simultaneously extend to the groove in the N-type epitaxy layer；
It is heat-treated and the second p-type ion implanting so that the p-type ion in first polysilicon is to the N-type extension
Layer diffusion, so as to which the N-type epitaxy layer surface below first polysilicon forms p-type high-doped zone and under the groove
The N-type epitaxy layer surface of side forms p-type doped regions；
The second silicon nitride layer and the three or two are sequentially formed on the p-type doped regions at groove and on first polysilicon
Silicon oxide layer；
3rd silicon dioxide layer is performed etching, so as to remove the part above the second silicon nitride layer on the groove
The 3rd silicon dioxide layer on the outside of three silicon dioxide layers, the trenched side-wall and the groove is retained；
Remove the second silicon nitride layer of part of the channel bottom so that the part exposure of the p-type doped regions；
The second polysilicon is formed on the p-type doped regions, second polysilicon is heat-treated so that described second
The N-type impurity of polysilicon diffuses to p-type doped regions surface, so as to form N-type region on p-type doped regions surface
Domain.
2. the production method of radio frequency triode as described in claim 1, it is characterised in that：The growth temperature of the field oxide
In the range of 700 degrees Celsius to 1200 degrees Celsius, in the range of growth thickness is 0.4um to 2um.
3. the production method of radio frequency triode as described in claim 1, it is characterised in that：Remove first silicon nitride layer and
The step of first silicon dioxide layer, includes：First silicon nitride layer is first got rid of using the concentrated phosphoric acid of heat；And it uses again
Hydrofluoric acid solution removes first silicon dioxide layer.
4. the production method of radio frequency triode as described in claim 1, it is characterised in that：The formation temperature of first polysilicon
Degree is in the range of 400 degrees Celsius to 900 degrees Celsius, and thickness is between the scope of 0.1um-0.5um；Second silica
The thickness of layer is in the range of 0.02um to 0.1um.
5. the production method of radio frequency triode as described in claim 1, it is characterised in that：The thickness of second silicon dioxide layer
Degree is in the range of 0.02um to 0.1um.
6. the production method of radio frequency triode as described in claim 1, it is characterised in that：The first time p-type ion implanting
In, injection ion includes B or BF2,14 powers to every square centimeter 1 16 powers of the implantation dosage every square centimeter 1
In the range of, Implantation Energy is in the range of 50KEV to 200KEV.
7. the production method of radio frequency triode as described in claim 1, it is characterised in that：Second of p-type ion implanting
In, injection ion includes B or BF2,12 powers to every square centimeter 1 14 powers of the implantation dosage every square centimeter 1
In the range of, Implantation Energy is in the range of 20KEV to 200KEV.
8. the production method of radio frequency triode as described in claim 1, it is characterised in that：The formation temperature of second polysilicon
Degree is in the range of 400 degrees Celsius to 1000 degrees Celsius, and thickness is in the range of 0.02um to 2um；To second polysilicon
Carry out in N-type ion implanting step, injection ion includes phosphorus or arsenic, implantation dosage every square centimeter 1 15 powers to often putting down
In the range of square centimetre 5 of 16 powers, Implantation Energy is in the range of 20KEV to 200KEV.
9. the production method of radio frequency triode as described in claim 1, it is characterised in that：The groove is in the N-type extension
Depth in layer is in the range of 0.2um to 0.5um.
10. a kind of radio frequency triode, which is characterized in that the radio frequency triode includes silicon substrate, is formed on the silicon substrate
N-type epitaxy layer, be formed at two first p-type high-doped zones on the N-type epitaxy layer surface, to be formed at described two p-types high
P-type doped regions between doped region are formed in the N-type epitaxy layer of p-type high-doped zone both sides and with wedge angle
Field oxide, be formed at the N-type region domain on p-type doped regions surface, be sequentially formed at the field oxide and the p-type
The first polysilicon above high-doped zone and silicon dioxide layer are formed at the p-type high-doped zone adjacent to the p-type doped regions
Side wall, the top of first polysilicon and silica and the silicon nitride layer on side wall and another silicon dioxide layer and shape
The second polysilicon described in Cheng Yu on N-type region domain.
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| CN1263637A (en) * | 1997-07-11 | 2000-08-16 | 艾利森电话股份有限公司 | A process for manufacturing IC-components to be used at radio frequencies |
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| KR20060062487A (en) * | 2004-12-03 | 2006-06-12 | 삼성전자주식회사 | Bipolar transistor and method of fabricating the same |
| CN106981421A (en) * | 2016-01-19 | 2017-07-25 | 北大方正集团有限公司 | The preparation method of triode base |
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