CN107995995B - 异质结构及其生产方法 - Google Patents
异质结构及其生产方法 Download PDFInfo
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- CN107995995B CN107995995B CN201580078600.2A CN201580078600A CN107995995B CN 107995995 B CN107995995 B CN 107995995B CN 201580078600 A CN201580078600 A CN 201580078600A CN 107995995 B CN107995995 B CN 107995995B
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- 239000002243 precursor Substances 0.000 claims description 92
- 229910002704 AlGaN Inorganic materials 0.000 claims description 70
- 230000010287 polarization Effects 0.000 claims description 41
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 6
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- 238000002360 preparation method Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 144
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 139
- 239000000523 sample Substances 0.000 description 36
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
S1 | S2 | S3 | |
界面 | 无AlN<sub>ex</sub> | AlN<sub>ex</sub> | 锐化的 |
2DEG迁移率(cm<sup>2</sup>/Vs) | 1669 | 2190 | 2154 |
2DEG密度(cm<sup>-2</sup>) | 6.34·10<sup>12</sup> | 7.8·10<sup>12</sup> | 6.5·10<sup>12</sup> |
薄层电阻Rs(Ω/平方) | 612 | 330 | 450 |
夹断电压(V) | -3.0 | -4.2 | -3.1 |
Claims (14)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2015/057038 WO2016155794A1 (en) | 2015-03-31 | 2015-03-31 | Heterostructure and method of its production |
Publications (3)
Publication Number | Publication Date |
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CN107995995A CN107995995A (zh) | 2018-05-04 |
CN107995995B true CN107995995B (zh) | 2022-03-04 |
CN107995995B8 CN107995995B8 (zh) | 2022-03-25 |
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CN201580078600.2A Active CN107995995B8 (zh) | 2015-03-31 | 2015-03-31 | 异质结构及其生产方法 |
Country Status (7)
Country | Link |
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US (1) | US10403746B2 (zh) |
EP (2) | EP3278366A1 (zh) |
JP (1) | JP6736577B2 (zh) |
KR (1) | KR102330910B1 (zh) |
CN (1) | CN107995995B8 (zh) |
TW (1) | TW201705496A (zh) |
WO (1) | WO2016155794A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6652042B2 (ja) * | 2016-12-13 | 2020-02-19 | 三菱電機株式会社 | Iii−v族窒化物半導体エピタキシャルウェハの製造方法 |
WO2018196948A1 (en) | 2017-04-24 | 2018-11-01 | Swegan Ab | Interlayer barrier |
JP7039684B2 (ja) * | 2017-07-20 | 2022-03-22 | スウェガン、アクチボラグ | 高電子移動度トランジスタのためのヘテロ構造及びその製造方法 |
TWI695418B (zh) * | 2017-09-22 | 2020-06-01 | 新唐科技股份有限公司 | 半導體元件及其製造方法 |
US10718726B2 (en) * | 2017-10-13 | 2020-07-21 | Infineon Technologies Austria Ag | Method for determining the concentration of an element of a heteroepitaxial layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102938413A (zh) * | 2012-11-21 | 2013-02-20 | 西安电子科技大学 | AlGaN/GaN异质结增强型器件及其制作方法 |
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JP3708810B2 (ja) * | 2000-09-01 | 2005-10-19 | シャープ株式会社 | 窒化物系iii−v族化合物半導体装置 |
US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
JP2003151996A (ja) * | 2001-09-03 | 2003-05-23 | Nichia Chem Ind Ltd | 2次元電子ガスを用いた電子デバイス |
US20070138505A1 (en) | 2005-12-12 | 2007-06-21 | Kyma Technologies, Inc. | Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same |
EP1883103A3 (en) | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
WO2010131451A1 (ja) | 2009-05-11 | 2010-11-18 | Dowaエレクトロニクス株式会社 | 電子デバイス用エピタキシャル基板およびその製造方法 |
JP5402454B2 (ja) * | 2009-09-18 | 2014-01-29 | コニカミノルタ株式会社 | 露光装置のミラーユニットおよびこれを用いた画像形成装置 |
JP2011210750A (ja) * | 2010-03-26 | 2011-10-20 | Nec Corp | 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置 |
JP5384450B2 (ja) | 2010-09-03 | 2014-01-08 | コバレントマテリアル株式会社 | 化合物半導体基板 |
JP2012119429A (ja) * | 2010-11-30 | 2012-06-21 | Sanken Electric Co Ltd | 半導体装置の製造方法、半導体装置 |
JP2012174705A (ja) | 2011-02-17 | 2012-09-10 | Sharp Corp | 窒化物半導体デバイス用エピタキシャルウエハとその製造方法 |
JP2013229493A (ja) * | 2012-04-26 | 2013-11-07 | Sharp Corp | Iii族窒化物半導体積層基板およびiii族窒化物半導体電界効果トランジスタ |
FR2998709B1 (fr) * | 2012-11-26 | 2015-01-16 | Commissariat Energie Atomique | Procede de fabrication d'un transistor a heterojonction de type normalement bloque |
CN104134690B (zh) * | 2014-07-22 | 2017-06-06 | 华为技术有限公司 | 一种高电子迁移率晶体管及其制备方法 |
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2015
- 2015-03-31 KR KR1020177031480A patent/KR102330910B1/ko active IP Right Grant
- 2015-03-31 CN CN201580078600.2A patent/CN107995995B8/zh active Active
- 2015-03-31 US US15/562,346 patent/US10403746B2/en active Active
- 2015-03-31 JP JP2017551123A patent/JP6736577B2/ja active Active
- 2015-03-31 WO PCT/EP2015/057038 patent/WO2016155794A1/en unknown
- 2015-03-31 EP EP15713478.4A patent/EP3278366A1/en not_active Ceased
- 2015-03-31 EP EP22183623.2A patent/EP4092719A1/en active Pending
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2016
- 2016-02-25 TW TW105105699A patent/TW201705496A/zh unknown
Patent Citations (1)
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CN102938413A (zh) * | 2012-11-21 | 2013-02-20 | 西安电子科技大学 | AlGaN/GaN异质结增强型器件及其制作方法 |
Also Published As
Publication number | Publication date |
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KR20170137128A (ko) | 2017-12-12 |
WO2016155794A1 (en) | 2016-10-06 |
JP2018514946A (ja) | 2018-06-07 |
KR102330910B1 (ko) | 2021-11-24 |
JP6736577B2 (ja) | 2020-08-05 |
EP3278366A1 (en) | 2018-02-07 |
EP4092719A1 (en) | 2022-11-23 |
US20180358457A1 (en) | 2018-12-13 |
CN107995995A (zh) | 2018-05-04 |
TW201705496A (zh) | 2017-02-01 |
CN107995995B8 (zh) | 2022-03-25 |
US10403746B2 (en) | 2019-09-03 |
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Correction item: Inventor Correct: Chen Zhitai|Eric Janssen False: Eric Janssen|Chen Zhitai Number: 09-02 Page: The title page Volume: 38 Correction item: Inventor Correct: Chen Zhitai|Eric Janssen False: Eric Janssen|Chen Zhitai Number: 09-02 Volume: 38 |
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