CN107995995A - 异质结构及其生产方法 - Google Patents
异质结构及其生产方法 Download PDFInfo
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- CN107995995A CN107995995A CN201580078600.2A CN201580078600A CN107995995A CN 107995995 A CN107995995 A CN 107995995A CN 201580078600 A CN201580078600 A CN 201580078600A CN 107995995 A CN107995995 A CN 107995995A
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- gan
- algan1
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000037230 mobility Effects 0.000 claims abstract description 41
- 239000002243 precursor Substances 0.000 claims description 96
- 230000010287 polarization Effects 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 40
- 229910002704 AlGaN Inorganic materials 0.000 claims description 36
- 230000012010 growth Effects 0.000 claims description 32
- 230000002269 spontaneous effect Effects 0.000 claims description 24
- 238000002441 X-ray diffraction Methods 0.000 claims description 19
- 238000005259 measurement Methods 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 230000007704 transition Effects 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 145
- 239000000523 sample Substances 0.000 description 45
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 26
- 229910017083 AlN Inorganic materials 0.000 description 25
- 239000011159 matrix material Substances 0.000 description 19
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 10
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 10
- 230000007717 exclusion Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000012512 characterization method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 3
- 238000000000 high-resolution scanning transmission electron microscopy Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910016542 Al2(CH3)6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- -1 cushion 13 Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012048 reactive intermediate Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
S1 | S2 | S3 | |
界面 | 无AlNex | AlNex | 锐化的 |
2DEG迁移率(cm2/Vs) | 1669 | 2190 | 2154 |
2DEG密度(cm-2) | 6.34·1012 | 7.8·1012 | 6.5·1012 |
薄层电阻Rs(Ω/平方) | 612 | 330 | 450 |
夹断电压(V) | -3.0 | -4.2 | -3.1 |
Claims (25)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2015/057038 WO2016155794A1 (en) | 2015-03-31 | 2015-03-31 | Heterostructure and method of its production |
Publications (3)
Publication Number | Publication Date |
---|---|
CN107995995A true CN107995995A (zh) | 2018-05-04 |
CN107995995B CN107995995B (zh) | 2022-03-04 |
CN107995995B8 CN107995995B8 (zh) | 2022-03-25 |
Family
ID=52781093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580078600.2A Active CN107995995B8 (zh) | 2015-03-31 | 2015-03-31 | 异质结构及其生产方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10403746B2 (zh) |
EP (2) | EP3278366A1 (zh) |
JP (1) | JP6736577B2 (zh) |
KR (1) | KR102330910B1 (zh) |
CN (1) | CN107995995B8 (zh) |
TW (1) | TW201705496A (zh) |
WO (1) | WO2016155794A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6652042B2 (ja) * | 2016-12-13 | 2020-02-19 | 三菱電機株式会社 | Iii−v族窒化物半導体エピタキシャルウェハの製造方法 |
WO2018196948A1 (en) | 2017-04-24 | 2018-11-01 | Swegan Ab | Interlayer barrier |
CN111164733B (zh) | 2017-07-20 | 2024-03-19 | 斯维甘公司 | 用于高电子迁移率晶体管的异质结构及其生产方法 |
TWI695418B (zh) * | 2017-09-22 | 2020-06-01 | 新唐科技股份有限公司 | 半導體元件及其製造方法 |
US10718726B2 (en) * | 2017-10-13 | 2020-07-21 | Infineon Technologies Austria Ag | Method for determining the concentration of an element of a heteroepitaxial layer |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US20110069407A1 (en) * | 2009-09-18 | 2011-03-24 | Konica Minolta Business Technologies, Inc., | Mirror unit of exposure device and image forming apparatus using mirror unit |
JP2011210750A (ja) * | 2010-03-26 | 2011-10-20 | Nec Corp | 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置 |
CN102938413A (zh) * | 2012-11-21 | 2013-02-20 | 西安电子科技大学 | AlGaN/GaN异质结增强型器件及其制作方法 |
US20140147977A1 (en) * | 2012-11-26 | 2014-05-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for fabricating an enhancement mode heterojunction transistor |
CN104134690A (zh) * | 2014-07-22 | 2014-11-05 | 华为技术有限公司 | 一种高电子迁移率晶体管及其制备方法 |
US20150069407A1 (en) * | 2012-04-26 | 2015-03-12 | Sharp Kabushiki Kaisha | Group iii nitride semiconductor multilayer substrate and group iii nitride semiconductor field effect transistor |
Family Cites Families (9)
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JP3708810B2 (ja) * | 2000-09-01 | 2005-10-19 | シャープ株式会社 | 窒化物系iii−v族化合物半導体装置 |
US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
JP2003151996A (ja) * | 2001-09-03 | 2003-05-23 | Nichia Chem Ind Ltd | 2次元電子ガスを用いた電子デバイス |
JP2009519202A (ja) | 2005-12-12 | 2009-05-14 | キーマ テクノロジーズ, インク. | Iii族窒化物製品及び同製品の作製方法 |
EP1883103A3 (en) | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
US8426893B2 (en) | 2009-05-11 | 2013-04-23 | Dowa Electronics Materials Co., Ltd. | Epitaxial substrate for electronic device and method of producing the same |
JP5384450B2 (ja) | 2010-09-03 | 2014-01-08 | コバレントマテリアル株式会社 | 化合物半導体基板 |
JP2012119429A (ja) * | 2010-11-30 | 2012-06-21 | Sanken Electric Co Ltd | 半導体装置の製造方法、半導体装置 |
JP2012174705A (ja) | 2011-02-17 | 2012-09-10 | Sharp Corp | 窒化物半導体デバイス用エピタキシャルウエハとその製造方法 |
-
2015
- 2015-03-31 EP EP15713478.4A patent/EP3278366A1/en not_active Ceased
- 2015-03-31 US US15/562,346 patent/US10403746B2/en active Active
- 2015-03-31 CN CN201580078600.2A patent/CN107995995B8/zh active Active
- 2015-03-31 WO PCT/EP2015/057038 patent/WO2016155794A1/en unknown
- 2015-03-31 KR KR1020177031480A patent/KR102330910B1/ko active IP Right Grant
- 2015-03-31 JP JP2017551123A patent/JP6736577B2/ja active Active
- 2015-03-31 EP EP22183623.2A patent/EP4092719A1/en active Pending
-
2016
- 2016-02-25 TW TW105105699A patent/TW201705496A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110069407A1 (en) * | 2009-09-18 | 2011-03-24 | Konica Minolta Business Technologies, Inc., | Mirror unit of exposure device and image forming apparatus using mirror unit |
JP2011210750A (ja) * | 2010-03-26 | 2011-10-20 | Nec Corp | 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置 |
US20150069407A1 (en) * | 2012-04-26 | 2015-03-12 | Sharp Kabushiki Kaisha | Group iii nitride semiconductor multilayer substrate and group iii nitride semiconductor field effect transistor |
CN102938413A (zh) * | 2012-11-21 | 2013-02-20 | 西安电子科技大学 | AlGaN/GaN异质结增强型器件及其制作方法 |
US20140147977A1 (en) * | 2012-11-26 | 2014-05-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for fabricating an enhancement mode heterojunction transistor |
CN104134690A (zh) * | 2014-07-22 | 2014-11-05 | 华为技术有限公司 | 一种高电子迁移率晶体管及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP4092719A1 (en) | 2022-11-23 |
JP6736577B2 (ja) | 2020-08-05 |
EP3278366A1 (en) | 2018-02-07 |
CN107995995B8 (zh) | 2022-03-25 |
TW201705496A (zh) | 2017-02-01 |
US20180358457A1 (en) | 2018-12-13 |
CN107995995B (zh) | 2022-03-04 |
KR20170137128A (ko) | 2017-12-12 |
US10403746B2 (en) | 2019-09-03 |
WO2016155794A1 (en) | 2016-10-06 |
KR102330910B1 (ko) | 2021-11-24 |
JP2018514946A (ja) | 2018-06-07 |
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Correction item: Inventor Correct: Chen Zhitai|Eric Janssen False: Eric Janssen|Chen Zhitai Number: 09-02 Page: The title page Volume: 38 Correction item: Inventor Correct: Chen Zhitai|Eric Janssen False: Eric Janssen|Chen Zhitai Number: 09-02 Volume: 38 |