CN107978535B - 半导体组件的回焊方法 - Google Patents
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Abstract
一种半导体组件的回焊方法,该方法包含有:准备一半导体组件,该半导体组件包含一基板与一晶片模组,该晶片模组包含有一中介板与设置于该中介板上的至少一晶片,该中介板经由多个导电块连接于该基板的顶面,提供一掩膜于该半导体组件上方,由一发光加热装置输出一加热光束,该加热光束通过该掩膜而照射于该晶片模组,以热传导对该多个导电块进行回焊,因此,该基板受到温度影响而翘曲的程度甚低,有效避免该晶片模组的结构受到该基板的翘曲形态所影响。
Description
技术领域
本发明是关于一种半导体组件的回焊方法,特别是指可降低半导体组件的翘曲的回焊方法。
背景技术
请参考图1所示的半导体组件10,其包含有一基板12与一晶片模组11,该基板12的顶面具有多个电极垫121,该晶片模组11包含有一中介板(interposer)111与至少一晶片112,图1是以两个晶片112为例。
该中介板111包含有一绝缘基材113、多个电极垫114与多个中介连接部115,该绝缘基材113包含有一顶面与一底面,该多个电极垫114分布且外露于该绝缘基材113的顶面与底面,其中于各电极垫114的周边处可具有钝化层(图中未示),各中介连接部115位在该绝缘基材113内并连接该绝缘基材113的顶面与底面的电极垫114。
该两晶片112的底面具有导电部116,导电部116通过导电块117分别连接该中介板111的顶面的电极垫114。该中介板111的底面的电极垫114通过导电块13与该基板12的顶面的电极垫121连接。
在制造工艺中,可将该晶片模组11与该基板12整体一起控制在一回焊温度的环境下,例如将该半导体组件10置于回焊炉中并控制该回焊温度为摄氏260度,藉此让该晶片模组11与该基板12之间的导电块13熔化以进行回焊动作,提升导电块13电性连接的特性。
然而,因为该晶片模组11与该基板12的热膨胀系数(coefficient ofthermalexpansion,CTE)彼此不同,故该晶片模组11与该基板12在不同温度时的翘曲形态也不同。举例来说,请参考图2A,该晶片模组11在室温环境是呈中间朝上且周边朝下的翘曲形态,请参考图2B,该基板12在室温环境是呈中间朝下且周边朝上的翘曲形态。请参考图2C,该晶片模组11在回焊温度环境是呈中间朝下且周边朝上的翘曲形态,请参考图2D,该基板12在回焊温度环境是呈中间朝上且周边朝下的翘曲形态。请参考图2E,当该晶片模组11与该基板12结合并完成回焊制造工艺后,两者在室温环境下皆呈中间朝上且周边朝下的翘曲形态。
如此一来,因为在制造工艺中该晶片模组11与该基板12为一起处在回焊温度环境,该晶片模组11的结构受到该基板12的翘曲形态所影响,导致该晶片模组11中的组成物(例如所述钝化层)从该中介板111剥离(delamination),或者如图2E所示的基板12并非平整,不利于后续制造工艺的组装作业,例如图3所示,翘曲的该基板12无法与底部为平整的散热盖14密合组装。
发明内容
有鉴于此,因此本发明的主要目的是提供一种半导体组件的回焊方法,有效避免半导体组件在回焊时造成翘曲。
本发明半导体组件的回焊方法包含:
准备一半导体组件,该半导体组件包含一基板与一晶片模组,该晶片模组包含有一中介板与设置于该中介板上的至少一晶片,该中介板经由多个导电块连接于该基板之顶面;
提供一掩膜于该半导体组件上方;以及
由一发光加热装置输出一加热光束,该加热光束通过该掩膜而照射于该晶片模组,以热传导对该多个导电块进行回焊。
和已知技术相比,本发明通过掩膜的设置,让该晶片模组受到加热光束的照射时可有效熔化该晶片模组与该基板之间的导电块以进行回焊,其中只有该晶片模组的底面被控制在回焊温度,该基板整体并未处在回焊温度的环境,故该基板受到温度影响而翘曲的程度甚低,让该半导体组件在回焊后不影响该晶片模组的结构,也能让该基板保持平整以利后续制造工艺的组装作业。
附图说明
图1:已知半导体组件的剖面示意图。
图2A:已知半导体组件的晶片模组在室温环境的翘曲形态示意图。
图2B:已知半导体组件的基板在室温环境的翘曲形态示意图。
图2C:已知半导体组件的晶片模组在回焊温度环境的翘曲形态示意图。
图2D:已知半导体组件的基板在回焊温度环境的翘曲形态示意图。
图2E:已知半导体组件在室温环境的翘曲形态示意图。
图3:已知半导体组件在翘曲时与散热盖的组装示意图。
图4:本发明的半导体组件的分解示意图。
图5:本发明的半导体组件的剖面示意图。
图6:本发明的半导体组件的俯视示意图。
图7:本发明的半导体组件的导热区域与垂直导热路径的示意图。
图8:本发明的半导体组件通过掩膜进行回焊的示意图。
图9:本发明的掩膜的俯视示意图。
附图标号
20 晶片模组
201 第一导热区域
202 第二导热区域
24 导电块
30 基板
40 半导体组件
50 发光加热装置
51 加热光束
60 掩膜
61 第一透光部
62 第二透光部
63 第三透光部
具体实施方式
本发明回焊方法为先准备一半导体组件,请参考图4,为一晶片模组20与一基板30的示意图,该晶片模组20与该基板30为分离设置,且该晶片模组20位于该基板30上方以供结合于该基板30。该晶片模组20可包含有一中介板(interposer)21与一个或多个晶片22,图4是以两个晶片22为例,但不以此为限,该两晶片22的底面具有多个导电部221。
该中介板21包含有一绝缘基材211、多个电极垫212与多个中介连接部213,该绝缘基材211包含有一顶面A与一底面B,该多个电极垫212分布且外露于该绝缘基材211的顶面A与底面B,该绝缘基材211于各电极垫212的周边处可具有钝化层(图中未示),使各电极垫212外露于钝化层,该多个中介连接部213位在该绝缘基材211内,且各该中介连接部213的两端分别延伸且连接该绝缘基材211的顶面A与底面B的电极垫212。位于该绝缘基材211的顶面A的电极垫212的位置对应于该多个晶片22的导电部221的位置,该两晶片22的导电部221通过导电块23分别连接该中介板21的顶面A的电极垫212,其中该绝缘基材211的顶面A仅有局部区域被该多个晶片22覆盖,位于该绝缘基材211的底面B的电极垫212上设有导电块24,所述导电块23、24可为锡球,但不以此为限。
该基板30具有一顶面C,该顶面C设有多个电极垫31,该多个电极垫31的位置分别对应于该中介板21的底面B的导电块24的位置。
请参考图5与图6,该晶片模组20与该基板30结合以形成该半导体组件40,其中该中介板21的底面B的导电块24与该基板30的顶面C的电极垫31连接,该半导体组件40不限于图5所示实施例的型态。
需说明的是,该晶片模组20整体的上表面(即:在X-Y平面)具有多个导热区域,各该导热区域对应一垂直(即:Z轴方向)导热路径,所述垂直导热路径可为该晶片模组20整体的上表面至下表面的垂直路径,该多个导热区域所对应的垂直导热路径的长度彼此不同。本发明实施例中,请参考图5与图7,该晶片模组20包含一第一导热区域201与一第二导热区域202,该第一导热区域201是在该晶片模组20中由上而下依序为该晶片22与该中介板21的区域,故该第一导热区域201对应一第一垂直导热路径P1,该第一垂直导热路径P1的长度L1为该晶片22的顶面D至该中介板21的底面B的垂直距离;该第二导热区域202是在该晶片模组20中由上而下仅有该中介板21的区域,故该第二导热区域202对应一第二垂直导热路径P2,该第二垂直导热路径P2的长度L2为该中介板21的顶面A至该中介板21的底面B的垂直距离。由前述可知,该第一垂直导热路径P1的长度L1大于该第二垂直导热路径P2的长度L2。
当该半导体组件40与该基板30结合以形成半导体组件40后,可对该半导体组件40进行回焊(reflow),请参考图8,本发明实施例是提供一掩膜60于该半导体组件40的上方,该掩膜60的上方设有一发光加热装置50,该发光加热装置50的底部用以发出加热光束51,该加热光束51是通过该掩膜60后而照射到该晶片模组20的上表面,供该晶片模组20吸收加热光束51的能量,以热传导对该多个导电块24进行回焊。其中,该发光加热装置50可为激光装置,该加热光束51可为激光光束,但不以此为限。
请参考图8,本发明实施例中,该掩膜60可包含有多个透光部,该多个透光部的位置对应于该晶片模组20的该多个导热区域的位置,各该透光部的图案(pattern)与所对应的各该导热区域的形状可为相同,但不以此为限。该多个透光部的透光率彼此不同,该多个透光部的透光率与该多个导热区域的垂直导热路径的长度具有正比关系,其中当透光部的透光率越高,加热光束51被透光部散发的能量越低,亦即晶片模组20的对应区域所吸收加热光束51的能量越高;反之,当透光部的透光率越低,加热光束51被透光部散发的能量越高,亦即晶片模组20的对应区域所吸收加热光束51的能量越低。
本发明实施例中,如图9所示,该掩膜60包含有第一透光部61、第二透光部62与第三透光部63,请配合参考图6、图8与图9,该第一透光部61的位置与图案对应于该半导体组件40的该第一导热区域201的位置与形状(即:该晶片22的顶面D的形状),该第二透光部62的位置与图案对应于该半导体组件40的该第二导热区域202的位置与形状(即:该中介板21的顶面A未被晶片22覆盖的形状),该第三透光部63的位置与图案对应于该基板30未被该晶片模组20覆盖的形状。如前所述,该第一垂直导热路径P1的长度L1大于该第二垂直导热路径P2的长度L2,可见该第一垂直导热路径P1的长度L1最长,该第二垂直导热路径P2的长度L2次之,故对于该掩膜60来说,该第一透光部61的透光率最高,该第二透光部62的透光率次之,该第三透光部63对应的区域没有回焊的对象(即:导电块24),故第三透光部63的透光率可为最低或为零。
如此一来,由该发光加热装置50以输出加热光束51,该加热光束51通过该掩膜60的该第一透光部61与该第二透光部62而照射于该晶片模组20的上表面,垂直导热路径较长的该第一导热区域201接收到的能量最高,垂直导热路径较短的该第二导热区域202接收到的能量次之,故当热传导至该晶片模组20的底部时,使该晶片模组20的底部温度能平均化,以供同时熔化该多个导电块24进行回焊。再者,请参考图8,该基板30未被该晶片模组20覆盖的区域没有被加热光束51照射,故该区域被温度的影响程度最低。
综上所述,该半导体组件40并非整体处在回焊温度的环境,该半导体组件40中只有该晶片模组20的底面被控制在回焊温度,该基板30整体而言并未处在回焊温度的环境,故该基板30受到温度影响而翘曲的程度甚低,有效避免该晶片模组20的结构受到该基板30的翘曲形态所影响。
Claims (9)
1.一种半导体组件的回焊方法,其特征在于,所述回焊方法包含:
准备一半导体组件,所述半导体组件包含一基板与一晶片模组,所述晶片模组包含有一中介板、设置于所述中介板上的至少一晶片与设置在所述中介板与所述晶片之间的导电块,另所述中介板经由多个导电块连接于所述基板的顶面,其中,所述晶片模组的上表面具有多个导热区域;
提供一掩膜于所述半导体组件上方,所述掩膜包含有具不同透光率的多个透光部,所述多个透光部的位置分别对应于所述多个导热区域的位置;以及
由一发光加热装置输出一加热光束,所述加热光束通过所述掩膜的所述多个透光部而分别照射于所述晶片模组的所述多个导热区域,以热传导对所述晶片模组的中介板与所述基板之间的所述多个导电块进行回焊。
2.根据权利要求1所述的半导体组件的回焊方法,其特征在于,于准备所述半导体组件的步骤中,各所述导热区域对应一垂直导热路径,所述垂直导热路径为所述晶片模组的上表面至下表面的垂直路径,所述多个导热区域对应的垂直导热路径的长度彼此不同;
于提供所述掩膜于所述半导体组件上方的步骤中,所述掩膜的所述多个透光部的透光率与所述多个导热区域的垂直导热路径的长度具有正比关系。
3.根据权利要求2所述的半导体组件的回焊方法,其特征在于,所述掩膜的各所述透光部的图案与所对应的各所述导热区域的形状为相同。
4.根据权利要求2所述的半导体组件的回焊方法,其特征在于,所述晶片模组的所述多个导热区域包含:
一第一导热区域,是所述晶片模组中由上而下依序为所述至少一晶片与所述中介板的区域,所述第一导热区域对应一第一垂直导热路径,所述第一垂直导热路径的长度为所述至少一晶片的顶面至所述中介板的底面的垂直距离;
一第二导热区域,是所述晶片模组中由上而下仅有所述中介板的区域,所述第二导热区域对应一第二垂直导热路径,所述第二垂直导热路径的长度为所述中介板的顶面至所述中介板的底面的垂直距离;
所述第一垂直导热路径的长度大于所述第二垂直导热路径的长度。
5.根据权利要求3所述的半导体组件的回焊方法,其特征在于,所述晶片模组的所述多个导热区域包含:
一第一导热区域,是所述晶片模组中由上而下依序为所述至少一晶片与所述中介板的区域,所述第一导热区域对应一第一垂直导热路径,所述第一垂直导热路径的长度为所述至少一晶片的顶面至所述中介板的底面的垂直距离;
一第二导热区域,是所述晶片模组中由上而下仅有所述中介板的区域,所述第二导热区域对应一第二垂直导热路径,所述第二垂直导热路径的长度为所述中介板的顶面至所述中介板的底面的垂直距离;
所述第一垂直导热路径的长度大于所述第二垂直导热路径的长度。
6.根据权利要求1或2所述的半导体组件的回焊方法,其特征在于,所述发光加热装置为激光装置,所述加热光束为激光光束。
7.根据权利要求3所述的半导体组件的回焊方法,其特征在于,所述发光加热装置为激光装置,所述加热光束为激光光束。
8.根据权利要求4所述的半导体组件的回焊方法,其特征在于,所述发光加热装置为激光装置,所述加热光束为激光光束。
9.根据权利要求5所述的半导体组件的回焊方法,其特征在于,所述发光加热装置为激光装置,所述加热光束为激光光束。
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